阅读说明：本技术 基于wr3标准波导加载移相微结构的太赫兹移相器 (Terahertz phase shifter based on WR3 standard waveguide loading phase-shifting microstructure ) 是由 史宗君 史金鑫 周翼鸿 兰峰 杨梓强 于 2019-08-27 设计创作，主要内容包括：基于WR3标准波导加载移相微结构的太赫兹移相器,涉及太赫兹技术。本发明包括WR3标准波导和移相结构件；所述移相结构件包括设置于矩形石英介质基片上的带有肖特基二极管的微带结构,所述微带结构包括顺次并行设置的第一肖特基二极管组、第二肖特基二极管组、第三肖特基二极管组和第四肖特基二极管组。本发明利用封闭结构(WR3标准波导)来改善太赫兹(THZ)波在开放结构中的大损耗,采用在石英的介质基片表面上拼接带有二极管的微结构来实现太赫兹(THZ)移相器的数字化,具有良好的相移特性。(A terahertz phase shifter based on a WR3 standard waveguide loading phase shifting microstructure relates to terahertz technology. The invention comprises a WR3 standard waveguide and a phase-shifting structural component; the phase-shifting structural part comprises a micro-strip structure which is arranged on a rectangular quartz medium substrate and is provided with Schottky diodes, and the micro-strip structure comprises a first Schottky diode group, a second Schottky diode group, a third Schottky diode group and a fourth Schottky diode group which are sequentially arranged in parallel. The invention utilizes the closed structure (WR3 standard waveguide) to improve the large loss of Terahertz (THZ) waves in the open structure, and adopts the micro structure with the diode spliced on the surface of the quartz medium substrate to realize the digitization of the THZ phase shifter, thereby having good phase shift characteristic.)

1. The terahertz phase shifter based on the WR3 standard waveguide loaded phase shifting microstructure is characterized by comprising a WR3 standard waveguide and a phase shifting structural member;

the phase-shifting structural part comprises a micro-strip structure which is arranged on a rectangular quartz medium substrate and is provided with Schottky diodes, and the micro-strip structure comprises a first Schottky diode group, a second Schottky diode group, a third Schottky diode group and a fourth Schottky diode group which are sequentially arranged in parallel;

the first Schottky diode group is composed of three Schottky diodes connected in parallel between the first control microstrip line and the first GND microstrip line, the second Schottky diode group is composed of two Schottky diodes connected in parallel between the second control microstrip line and the second GND microstrip line, the third Schottky diode group is composed of two Schottky diodes connected in parallel between the third control microstrip line and the third GND microstrip line, and the fourth Schottky diode group is composed of three Schottky diodes connected in parallel between the fourth control microstrip line and the fourth GND microstrip line; the first GND microstrip line, the second GND microstrip line, the third GND microstrip line and the fourth GND microstrip line are arranged in a collinear manner and are independent from each other; in each Schottky diode group, a connecting line of the Schottky diode and the control microstrip line is vertical to the control microstrip line, and each control end microstrip line and the GND end microstrip line are parallel to the long edge of the dielectric substrate;

the long side of the dielectric substrate is parallel to the axis of the waveguide, the bottom surface of the dielectric substrate is perpendicular to the E surface of the waveguide, and the distance from the intersection line of the dielectric substrate and the E surface of the waveguide to the H surface of the waveguide is 1/4 of the width of the E surface;

each GND microstrip line is in conductive contact with the waveguide, each control microstrip line is led out of the waveguide through a control slot formed in the waveguide, and each Schottky diode is positioned in the inner cavity of the waveguide.

Technical Field

The invention relates to a terahertz technology.

Background

Terahertz (Tera Hertz, THZ) waves include electromagnetic waves having a frequency of 0.1 to 10THZ, so that terahertz waves have the advantages of high natural frequency and large bandwidth, and thus Terahertz (THZ) radar has high spatial resolution and distance resolution. The phase array radar has the advantages of flexible wave scanning, capability of tracking multiple targets, good anti-interference performance and the like, and is used as a key component of a Terahertz (THZ) phase array, and the cost and the performance of a phase shifter directly influence the manufacturing cost and the performance of a phase array radar system. Therefore, the research on the THz phase shifter with high performance, easy realization and low cost has very important practical significance for improving the performance and the structure of the phased array and realizing the THz phased array radar with small size and low power consumption.

The short wave band of THz wave can be developed into quasi-optical device, and most of transmission structure adopts photonic crystal waveguide, photonic crystal fiber and polymer waveguide. The long wave band of THz wave is coincided with the sub-millimeter wave band, and the development of the THz wave can be referred to the microwave technology. Microwave-band phase shifters are typically implemented by ferrite-based materials, Positive Intrinsic Negative (PIN) diodes, or Field Effect Transistor (FET) switch arrays. Generally, a positive-intrinsic-negative diode is adopted, and the diode is loaded based on a planar transmission waveguide, so that the microwave is transmitted along different paths by switching on and off the diode, thereby achieving different phase shifts, but the planar transmission waveguide loading diode is not adopted in the Terahertz (THZ) wave range, and the phase shift change is realized by changing the transmission path of the terahertz wave. Mainly because Terahertz (THZ) waves have too large losses in such open structures to enable transmission. The method is a good way to realize the terahertz wave propagation by using the waveguide with the closed structure, so that huge loss caused by an open structure such as a planar waveguide to the terahertz wave can be avoided to a great extent. However, with the development of phase control radars, the phase shifter has higher and higher precision and larger phase shift amount, and is more and more required to be easy to control. Therefore, the phase shifter is required to be digitized more and more, which results in that the digitization of the phase shifter is difficult to realize in the waveguide of the closed structure, while the digitization of the phase shifter is easy to realize in the planar structure, and the advantages of electric control and the like are also easy to realize.

At present, the research on terahertz phase shifters is less, and no mature device structure solution exists. The comprehensive application of new materials, new mechanisms and new manufacturing processes are the solutions and development directions of Terahertz (THZ) phase shifters. At present, the main development trends of terahertz phase shifters are terahertz phase shifters based on special materials and terahertz phase shifters based on advanced technology. The terahertz phase shifter based on the special material is mainly divided into a terahertz phase shifter based on a liquid crystal material and a terahertz phase shifter based on graphene. The terahertz phase shifter based on the advanced technology is mainly divided into two forms of a terahertz phase shifter based on an MEMS switch and a terahertz phase shifter based on an integrated circuit technology.

The invention content is as follows:

the invention aims to solve the technical problem of providing a digital phase shifter which can avoid the larger loss of an open waveguide structure to Terahertz (THZ) waves and realize accurate control.

The technical scheme adopted by the invention for solving the technical problems is to provide a novel phase shifter based on WR3 standard waveguide loaded with I-shaped microstructure with diodes. The principle is that the change of the propagation constant of the Terahertz (THZ) wave in the waveguide is realized by utilizing the on-off of the diode on the microstructure, and finally, the change of the phase shift is realized.

Specifically, the invention provides a terahertz phase shifter based on a WR3 standard waveguide loaded phase shifting microstructure, which is characterized by comprising a WR3 standard waveguide and a phase shifting structural member;

the phase-shifting structural part comprises a micro-strip structure which is arranged on a rectangular quartz medium substrate and is provided with Schottky diodes, and the micro-strip structure comprises a first Schottky diode group, a second Schottky diode group, a third Schottky diode group and a fourth Schottky diode group which are sequentially arranged in parallel;

the first Schottky diode group is composed of three Schottky diodes connected in parallel between the first control microstrip line and the first GND microstrip line, the second Schottky diode group is composed of two Schottky diodes connected in parallel between the second control microstrip line and the second GND microstrip line, the third Schottky diode group is composed of two Schottky diodes connected in parallel between the third control microstrip line and the third GND microstrip line, and the fourth Schottky diode group is composed of three Schottky diodes connected in parallel between the fourth control microstrip line and the fourth GND microstrip line; the first GND microstrip line, the second GND microstrip line, the third GND microstrip line and the fourth GND microstrip line are arranged in a collinear manner and are independent from each other; in each Schottky diode group, a connecting line of the Schottky diode and the control microstrip line is vertical to the control microstrip line, and each control end microstrip line and the GND end microstrip line are parallel to the long edge of the dielectric substrate;

the long side of the dielectric substrate is parallel to the axis of the waveguide, the bottom surface of the dielectric substrate is perpendicular to the E surface of the waveguide, and the distance from the intersection line of the dielectric substrate and the E surface of the waveguide to the H surface of the waveguide is 1/4 of the width of the E surface;

each GND microstrip line is in conductive contact with the inner wall of the waveguide, each control microstrip line is led out of the waveguide through a control slot formed in the waveguide, and each Schottky diode is positioned in the inner cavity of the waveguide.

The invention utilizes the closed structure (WR3 standard waveguide) to improve the large loss of Terahertz (THZ) waves in the open structure, and adopts the micro structure with the diode spliced on the surface of the quartz medium substrate to realize the digitization of the THZ phase shifter, thereby having good phase shift characteristic.

Drawings

Fig. 1 is a schematic view of a waveguide structure employed in the present invention.

Fig. 2 is a schematic structural diagram of the present invention.

Fig. 3 is a schematic diagram of a sliced waveguide of the present invention.

FIG. 4 is a schematic view of the position of the phase shifting structure of the present invention.

FIG. 5 is a schematic view of the phase shifting structure of the present invention.

Fig. 6 is a schematic view of the location of control holes of the present invention.

FIG. 7 is a schematic illustration of the location of control line slots with respect to current distribution on the waveguide wall.

Fig. 8 is a graph of the phase shift characteristic of the present invention.

Detailed Description

WR3 standard waveguide for use in the present invention referring to fig. 1, a phase shifting structure 21 is provided within a waveguide 20, as shown in fig. 2. The phase shift structure 21 is a rectangular flat plate-shaped member, and includes a microstrip structure with schottky diodes disposed on a rectangular quartz medium substrate. The long side of the dielectric substrate is parallel to the axis of the waveguide, the bottom surface of the dielectric substrate is perpendicular to the E surface of the waveguide, the distance from the intersection line of the dielectric substrate and the E surface of the waveguide to the H surface of the waveguide is 1/4 of the width L of the E surface, and the reference figures 3 and 4 are viewing angles parallel to the section of the waveguide. One embodiment of the present invention is to split the waveguide into two parts at 1/4 along the E-plane width L (split along the dashed lines in fig. 3 and 4) and mount the phase shifting structure 21 as shown in fig. 4.

Referring to fig. 5, the phase shift structure includes a microstrip structure with schottky diodes disposed on a rectangular quartz dielectric substrate 50, the microstrip structure including a first schottky diode group 51, a second schottky diode group 52, a third schottky diode group 53 and a fourth schottky diode group 54 disposed in parallel in this order;

the first schottky diode group 51 is composed of three schottky diodes 510 connected in parallel between a first control microstrip line 511 and a first GND microstrip line 512, the first control microstrip line 511 is led out of the waveguide through a first control line 513 and a control line hole, and 514 is a contact point of the GND microstrip line and the waveguide.

Similarly, the second schottky diode group 52 is composed of two schottky diodes 520 connected in parallel between the second control microstrip line 521 and the second GND microstrip line 522, the second control microstrip line 521 is led out of the waveguide through the first control line 524 and the control line hole, the third schottky diode group is composed of two schottky diodes connected in parallel between the third control microstrip line and the third GND microstrip line, and the fourth schottky diode group is composed of three schottky diodes connected in parallel between the fourth control microstrip line and the fourth GND microstrip line; the first GND microstrip line, the second GND microstrip line, the third GND microstrip line and the fourth GND microstrip line are arranged in a collinear way (the positions of the first GND microstrip line, the second GND microstrip line, the third GND microstrip line and the fourth GND microstrip line are in the same straight line) but are independent of each other; in each Schottky diode group, a connecting line of the Schottky diode and the control microstrip line is vertical to the control microstrip line, and each control end microstrip line and the GND end microstrip line are parallel to the long edge of the dielectric substrate.

The long side of the dielectric substrate is parallel to the axis of the waveguide, the bottom surface of the dielectric substrate is perpendicular to the E surface of the waveguide, and the distance from the intersection line of the dielectric substrate and the E surface of the waveguide to the H surface of the waveguide is 1/4 of the width of the E surface; each GND microstrip line is in conductive contact with the waveguide, each control microstrip line is led out of the waveguide through a control slot formed in the waveguide, and each Schottky diode is positioned in the inner cavity of the waveguide.

The invention realizes the change of the propagation constant of the Terahertz (THZ) wave in the waveguide by utilizing the on-off of the diode on the microstructure, and finally realizes the change of the phase shift.

In order to realize the digitization of the phase shifter, the invention adopts four I-shaped phase shifting microstructure units with Schottky diodes. Thus achieving sixteen different phase shift amounts. Wherein the four I-shaped phase-shifting microstructure units are distributed as follows: the units at two ends of the substrate are formed by connecting three I-shaped microstructures in parallel, and the two units in the middle of the substrate are formed by connecting two I-shaped microstructures in parallel. Wherein the loading position of the Schottky diode is positioned in the middle part of the I-shaped structure.

In order to increase the phase shift amount of the phase shifter, one surface of the substrate, which is provided with the phase shift microstructure, faces to the central position of the waveguide, and more Terahertz (THZ) waves pass through the surface of the dielectric substrate with the microstructure, so that the larger phase shift amount is realized.

In order to reduce the loss caused by adding a phase-shifting microstructure into the waveguide, the following measures are taken:

(1) according to the distribution of the Terahertz (THZ) wave in the waveguide, the waveguide is loaded at one fourth of the E surface of the waveguide, so that the condition that a dielectric substrate is loaded in a region with stronger distribution of the THZ wave to bring larger dielectric loss is avoided.

(2) And the medium base adopts quartz with lower relative dielectric constant, thereby avoiding larger medium loss caused by a substrate with higher relative dielectric constant.

(3) The radiation loss of Terahertz (THZ) waves caused by the introduction of the microstructure control line grooves on the waveguide wall is reduced, and the control line grooves are placed at positions where the cutting of waveguide wall currents is avoided as much as possible, so that the control line grooves are respectively led out by a method of staggering the upper waveguide wall and the lower waveguide wall, as shown in fig. 6 and 7, fig. 6 is a longitudinal sectional schematic diagram of a waveguide, 60 is the control line groove, and 61 is a waveguide inner cavity. After the sliced waveguides are recombined, the control wire slot becomes a control wire hole.

(4) The radiation loss of the Terahertz (THZ) wave caused by the fact that a rectangular groove is formed in the waveguide and a medium substrate is placed in the waveguide is reduced, the position of the groove is parallel to the current distribution direction on the upper wall surface and the lower wall surface of the waveguide (the distribution direction of the current on the surfaces of the upper wall surface and the lower wall surface of the waveguide is parallel to the direction of the waveguide as much as possible), the position of the groove is made to cut the surface current of the waveguide wall as little as possible, and the radiation loss of the THZ wave is reduced.

The specific preparation process comprises the following steps:

(1) the WR3 standard waveguide geometry (length x width: 0.864mm x 0.432mm) is divided into two parts from one quarter of the long side. After cutting, four circular control wire slots with the radius of 0.2mm and the rectangular slots for placing the quartz medium substrates are arranged on two side walls at the quarter of the long edge (wherein the size of the rectangular slots is that the length x the width x the height: 2.708mm x0.84mm x 0.06 mm).

(2) The geometric dimension (length, width, x height: 2.7mm, x 0.832mm, x 0.05mm) of the rectangular dielectric substrate is that the microstructure can not grow on the surface of the quartz dielectric substrate, so the invention uses the conductive adhesive to adhere the manufactured microstructure on the surface of the dielectric substrate.

(3) The microstrip structure with the Schottky diodes is distributed on the dielectric substrate in an I-shaped form, and the Schottky diodes are arranged in the middle of the I-shaped form. Two ends of the medium substrate are connected in parallel by three I-shaped microstrip structures to form two units. Two I-shaped microstrip structures are connected in parallel to form two units in the middle part. Thus forming a total of four cells.

(4) The dielectric substrate with the microstructure is placed in the rectangular slot of the standard rectangular waveguide of the WR3 and fixed by conductive adhesive. And then, a control line of the microstructure is connected with a peripheral circuit through a control line slot of the waveguide by adopting a jumper process. And finally, splicing and fixing the waveguide on the flange by adopting pins and screws.

The Terahertz (THZ) phase shifter of the present invention was simulated by HFSS software, in which the phase shift amounts of sixteen states in the frequency band of 295GHZ-320GHZ are shown in fig. 8. Where the maximum phase shift can be up to 200 deg., the amount of phase shift for each adjacent state differs by 15 deg. on average.