阅读说明：本技术 一种芯片生产用离子注入设备 (Ion implantation equipment for chip production ) 是由 冯聪 于 2019-10-03 设计创作，主要内容包括：本发明涉及芯片生产技术领域,且公开了一种芯片生产用离子注入设备,包括壳体,所述壳体内部下端固定安装有支撑架,支撑架的上端固定安装有固定壳,固定壳内部的下端固定安装有固定块,固定块上表面的凸出处滑动连接有活动柱,所述固定壳的内部固定安装有刻度板,刻度板的正面滑动搭接有活动杆。通过离子发生器、固定板、密封球、喷射壳、喷射头与固定横杆的配合使用,可以有效的将离子发生器内的离子均匀的分布在喷射壳内部的两端,具备可将离子均匀的打在半导体上的优点,保证了半导体上的离子尽可能的均匀分布一直,避免了传统喷射工艺中,喷出的来的离子在半导体上,呈中间多,四周少的情况。(The invention relates to the technical field of chip production, and discloses ion implantation equipment for chip production, which comprises a shell, wherein a support frame is fixedly arranged at the lower end inside the shell, a fixed shell is fixedly arranged at the upper end of the support frame, a fixed block is fixedly arranged at the lower end inside the fixed shell, a protruding part on the upper surface of the fixed block is connected with a movable column in a sliding manner, a scale plate is fixedly arranged inside the fixed shell, and a movable rod is lapped on the front surface of the scale plate in a sliding manner. Through ion generator, fixed plate, ball sealer, spraying shell, injector head and fixed horizontal pole's cooperation use, can be effectual the even distribution of ion in the ion generator at the inside both ends of spraying shell, possess can be with the even advantage of beating on the semiconductor of ion, guaranteed that the ion evenly distributed as far as on the semiconductor is always, avoided traditional spraying technology in, the ion that the spun came is many in the middle on the semiconductor, the less condition all around.)

1. An ion implantation apparatus for chip production, comprising: a housing (1), characterized in that: the device is characterized in that a support frame (2) is fixedly arranged at the lower end inside the shell (1), a fixed shell (3) is fixedly arranged at the upper end of the support frame (2), a fixed block (4) is fixedly arranged at the lower end inside the fixed shell (3), a protruding part of the upper surface of the fixed block (4) is connected with a movable column (5) in a sliding manner, a scale plate (6) is fixedly arranged inside the fixed shell (3), a movable rod (7) is slidably lapped on the front surface of the scale plate (6), two symmetrical clamping balls (8) are fixedly arranged at the two ends of the movable rod (7), an ion generator (9) is fixedly arranged at the upper end of the movable rod (7), a fixed plate (10) is fixedly arranged at the outer part of the fixed shell (3) in a penetrating manner and extending to the upper end of the ion generator (9), a spraying shell (12) is connected at the two ends of the fixed plate (10), the middle part of the inner cavity of the injection shell (12) is fixedly provided with a fixed cross rod (14), and the inner wall of the support frame (2) is fixedly provided with two symmetrical air injection pipes (15).

2. The ion implantation apparatus for chip production according to claim 1, wherein: the ion gun head is composed of the fixing plate (10), the sealing ball (11), the spraying shell (12) and the spraying head (13).

3. The ion implantation apparatus for chip production according to claim 1, wherein: the fixed cross bar (14) is positioned right above the ion generator (9), and the diameter of the fixed cross bar (14) is smaller than that of the ion generator (9).

4. The ion implantation apparatus for chip production according to claim 1, wherein: the gas injection pipe (15) is positioned on the inner wall of the shell (1) and inclines downwards thirty-five degrees to forty-five degrees, and nitrogen is filled in the gas injection pipe (15).

5. The ion implantation apparatus for chip production according to claim 1, wherein: the upper end of the shell (1) is movably provided with an upper cover, the lower end of the upper cover is movably provided with a semiconductor, and the semiconductor is positioned right above the ion generator (9).

6. The ion implantation apparatus for chip production according to claim 1, wherein: the diameter of the fixed cross rod (14) is matched with the inner diameter of the middle part of the spraying shell (12).

7. The ion implantation apparatus for chip production according to claim 1, wherein: the spray head (13) is positioned on the spray shell (12) and inclines towards one end of the fixed cross rod (14).

8. The ion implantation apparatus for chip production according to claim 1, wherein: the back fixed mounting of movable rod (7) lower extreme has the fixed strip, and the front of scale plate (6) is opened has the slide with movable rod (7) looks adaptation.

Technical Field

The invention relates to the technical field of chip production, in particular to ion implantation equipment for chip production.

Background

In a modern semiconductor manufacturing process, a complete semiconductor device is generally manufactured by using a plurality of steps of ion implantation, and the most important process parameters of the ion implantation are impurity species, implantation energy and dopant amount. The impurity type is selected to be implanted into a silicon substrate, and generally, the impurity type can be divided into an N type and a P type, wherein the N type mainly comprises phosphorus, arsenic, antimony and the like, the P type mainly comprises boron, indium and the like, the implantation energy determines the depth of the impurity atoms implanted into the silicon crystal, the high-energy implantation depth is deep, and the low-energy implantation depth is shallow. The dopant amount refers to the concentration of impurity atoms implanted, which determines the conductivity of the doped layer, and usually the designer of the semiconductor device needs to optimize these process parameters for each step of ion implantation according to specific target device characteristics.

Present chip ion implantation equipment is when using, the shower nozzle of ion is mostly only one, will lead to through the ion that the shower nozzle spun comes on the semiconductor like this, it is middle many, less circumstances all around for the ion beats uneven distribution on the semiconductor, thereby influence the quality of semiconductor after making the chip, lead to the chip to need to make again or the processing of going back to the stove once more, wasted more process time, and the consumption of manpower and material resources, given people and brought more inconvenience.

In order to solve the above problems, the inventors propose an ion implantation apparatus for chip production, which has the advantage of uniformly striking ions on a semiconductor, ensures that the ions on the semiconductor are uniformly distributed as far as possible, and avoids the situation that the ejected ions are more in the middle and less around on the semiconductor in the conventional ejection process.

Disclosure of Invention

The invention adopts the following technical scheme for realizing the technical purpose: an ion implantation apparatus for chip production, comprising: the casing, inside lower extreme fixed mounting of casing has the support frame, and the upper end fixed mounting of support frame has the set casing, and the inside lower extreme fixed mounting of set casing has the fixed block, and the protrusion department sliding connection of fixed block upper surface has a movable column, the inside fixed mounting of set casing has the scale plate, and the positive slip overlap joint of scale plate has the movable rod, and the both ends fixed mounting of movable rod has two symmetrical card balls, the upper end fixed mounting of movable rod has ion generator, and ion generator's upper end runs through and extends to the outside fixed mounting of set casing has the fixed plate, and there is the injection shell at the both ends of fixed plate through sealed ball threaded connection, and the both ends fixed mounting who sprays the shell has the injector head, the middle part fixed mounting who sprays the shell inner chamber has fixed cross bar, the inner wall fixed mounting.

Furthermore, the fixed plate, the sealing ball, the spraying shell and the spraying head jointly form the ion gun head.

Furthermore, the fixed cross bar is positioned right above the ion generator, and the diameter of the fixed cross bar is smaller than that of the ion generator, so that the fixed cross bar is mainly used for dividing ions ejected by the ion generator into two halves.

Further, the inner wall that the jet pipe is located the casing is thirty to forty-five degrees of downward sloping, and the jet pipe intussuseption nitrogen gas, and mainly for if the ion speed of injector head spun is too fast, it is inhomogeneous to squeeze into the inside position that makes the ion be located semiconductor easily of semiconductor, leads to influencing the semiconductor quality and receives the influence, and the nitrogen gas of filling is because of the inertia characteristic that utilizes nitrogen gas in toward the jet pipe, can not take place the reaction with the ion that erupts.

Furthermore, an upper cover is movably mounted at the upper end of the shell, a semiconductor is movably mounted at the lower end of the upper cover, and the semiconductor is located right above the ion generator.

Furthermore, the diameter of the fixed cross rod is matched with the inner diameter of the middle part of the spraying shell, and the fixed cross rod is mainly used for ensuring that ions at two ends inside the spraying shell are equal.

Furthermore, the spray head is positioned on the spray shell and inclines towards one end of the fixed cross rod in an inclined mode, and the purpose is to uniformly spray ions on the semiconductor.

Furthermore, the back fixed mounting of movable rod lower extreme has the fixed strip, and the front of scale plate is opened has the slide with movable rod looks adaptation, mainly is for helping the movable rod angle of adjustment usefulness.

The invention has the following beneficial effects:

1. this ion implantation equipment is used in chip production, through ion generator, the fixed plate, the ball sealer, spray the shell, the cooperation of injector head and fixed horizontal pole is used, can be effectual the even distribution of ion in the ion generator at the inside both ends of spraying the shell, possess can be with the even advantage of beating on the semiconductor of ion, guaranteed that the ion evenly distributed as far as on the semiconductor always, avoided in the tradition spraying technology, the ion that the spun came is many in the middle of being on the semiconductor, the less condition all around.

2. This ion implantation equipment is used in chip production uses through the cooperation of fixed block, activity post, scale plate, movable rod and calorie ball, can be effectual in the device operation, when taking place vibrations, can effectually fix ion generator through the movable rod, uses mainly for driving through the movable rod through the cooperation of scale plate and interlocking pole and sprays the shell, changes the angle of spraying to realize the requirement of different semiconductor realization injection angles.

Drawings

FIG. 1 is a schematic view of the structure of the present invention.

Fig. 2 is a front cut enlarged schematic view of the fixing shell structure of the present invention.

Fig. 3 is a sectional structure diagram of the fixing rod, the fixing plate and the injection shell of the present invention.

In the figure: the device comprises a shell 1, a support frame 2, a fixed shell 3, a fixed block 4, a movable column 5, a scale plate 6, a movable rod 7, a clamping ball 8, an ion generator 9, a fixed plate 10, a sealing ball 11, an injection shell 12, an injection head 13, a fixed cross rod 14 and an air injection pipe 15.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1-3, an ion implantation apparatus for chip production includes: a housing 1.

As shown in fig. 1: the inside lower extreme fixed mounting of casing 1 has support frame 2, and the upper end movable mounting of casing 1 has the upper cover, and the lower extreme movable mounting of upper cover has the semiconductor, and the semiconductor is located ionizer 9 directly over, and the upper end fixed mounting of support frame 2 has set casing 3.

As shown in fig. 2: fixed housing 3 inside lower extreme fixed mounting has fixed block 4, the protrusion department sliding connection of fixed block 4 upper surface has movable post 5, the inside fixed mounting of fixed housing 3 has scale plate 6, the front slip overlap joint of scale plate 6 has movable rod 7, the back fixed mounting of movable rod 7 lower extreme has the fixed strip, open in the front of scale plate 6 has the slide with 7 looks adaptations of movable rod, mainly be for helping 7 angle of adjustment of movable rod usefulness, the both ends fixed mounting of movable rod 7 has two symmetrical card balls 8, the upper end fixed mounting of movable rod 7 has ion generator 9.

Wherein, use through the cooperation of fixed block 4, activity post 5, scale plate 6, movable rod 7 and calorie ball 8, can be effectual in the device operation, when taking place vibrations, can effectually fix through movable rod 7 ion generator, use through the cooperation of scale plate 9 and interactive rod 7 mainly to drive through movable rod 7 and spray shell 12, change the angle of spraying to realize the requirement of different semiconductor and can spray the angle.

As shown in fig. 3: the upper end of the ion generator 9 penetrates through and extends to the outside of the fixed shell 3, a fixed plate 10 is fixedly installed, the fixed plate 10, a sealing ball 11, a spraying shell 12 and a spraying head 13 jointly form an ion gun head, two ends of the fixed plate 10 are connected with the spraying shell 12 through the sealing ball 11 in a threaded mode, the spraying head 13 is fixedly installed at two ends of the spraying shell 12, the spraying head 13 is located on the spraying shell 12 and inclines towards one end of a fixed cross rod 14 in an inclined mode, mainly for uniformly spraying ions on a semiconductor, the middle of an inner cavity of the spraying shell 12 is fixedly provided with the fixed cross rod 14, the diameter of the fixed cross rod 14 is matched with the inner diameter of the middle of the spraying shell 12, mainly for guaranteeing that ions at two ends inside the spraying shell 12 are equal, the fixed cross rod 14 is located right above the ion generator 9, the diameter of the fixed cross rod 14 is smaller than that of the ion generator 9, and, the inner wall fixed mounting of support frame 2 has two symmetrical jet-propelled pipes 15, the inner wall that jet-propelled pipe 15 is located casing 1 is thirty to forty-five degrees of downward sloping, and fill nitrogen gas in jet-propelled pipe 15, if it is too fast to avoid injector head 13 spun ion velocity, it is inhomogeneous to squeeze into the inside position that makes the ion be located semiconductor easily of semiconductor, will lead to influencing semiconductor quality and receive the influence, it is the inertia characteristic that utilizes nitrogen gas to fill nitrogen gas in the jet-propelled pipe 15, can not take place the reaction with the ion that erupts, and then improve semiconductor's quality.

Wherein, use through the cooperation of ion generator 9, fixed plate 10, ball sealer 11, spraying shell 12, injector head 13 and fixed horizontal pole 14, can be effectual the even both ends of distributing in spraying shell 12 of ion in the ion generator 9, possess the even advantage of beating on the semiconductor of ion, guaranteed that the ion on the semiconductor evenly distributed as far as always, avoided in traditional injection technology, the ion that the spun came is many in the middle of on the semiconductor, the less circumstances all around.

When in use, the movable rod 7 is adjusted to reach a required angle through the scale plate 6, then the ion generator 9 is started, ions pass through the fixed cross rod 14 in the spraying shell 12, the ions are divided into two parts, one part is arranged at the left end of the spraying shell 12, the other part is arranged at the right end of the spraying shell 12, the ions are sprayed out through the spraying head 13, and because the spraying head 13 is inclined, so that the central portion of the jet from the jet head 13 is thickest and the periphery is thinnest, and in order to make the distribution of ions uniform, the portions where the ejected ions from the ejection heads 13 intersect overlap, so that the ion distribution is uniform, and at the same time, if the movable rod 7 is unstable on the scale plate 6, when swaying left and right, when the lower end of the movable rod 7 contacts left and right with the convex block on the fixed block 4, the circuit is switched on, the two movable columns 5 gradually draw close to the middle and are gradually clamped on the clamping ball 8, and the movable rod 7 is helped to be fixed on the scale plate 6.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.