阅读说明：本技术 一种cof基板的新冲孔式样和曝光对位mark设计方法 (Novel punching pattern and exposure alignment MARK design method of COF substrate ) 是由 戚爱康 孟庆园 计晓东 孙彬 沈洪 李晓华 于 2019-11-14 设计创作，主要内容包括：本发明提供一种COF基板的新冲孔式样和曝光对位MARK设计方法,涉及COF基板曝光技术领域。该COF基板的新冲孔式样和曝光对位MARK设计方法,包括以下步骤：S1、准备绝缘基材,在绝缘基材的单面通过溅镀法或电解电镀法形成铜导体层,绝缘基材和铜导体层组成COF基材,S2、在COF基材上进行冲孔,冲出多个方孔与shot间通孔,在现有的基础上,在两个方孔之间加入一个圆孔,该圆孔为新的曝光对位MARK。通过将现有的方孔改为方孔加圆孔的模式,可以在最小限度改变生产线,控制变更成本的前提下,提高曝光的准确性和效率,由此,减少因曝光位置偏移引起的过曝和漏曝问题,提高产品良率和经济效益。(The invention provides a new punching pattern and exposure alignment MARK design method of a COF substrate, and relates to the technical field of COF substrate exposure. The new punching pattern and exposure alignment MARK design method of the COF substrate comprises the following steps: s1, preparing an insulating substrate, forming a copper conductor layer on one side of the insulating substrate through a sputtering method or an electrolytic plating method, forming a COF substrate by the insulating substrate and the copper conductor layer, S2, punching the COF substrate, punching a plurality of square holes and shot through holes, and adding a round hole between the two square holes on the basis of the prior art, wherein the round hole is a new exposure alignment MARK. Through changing present square hole into the mode that the square hole adds the round hole, can change the production line at the minimum, under the prerequisite of control change cost, improve the accuracy and the efficiency of exposing, consequently, reduce because of the overexposure that exposure offset arouses and leak the problem of exposing, improve product yield and economic benefits.)

1. A new punching pattern and exposure alignment MARK design method of COF substrate is characterized in that: the method comprises the following steps:

s1, preparing an insulating substrate, forming a copper conductor layer on one side of the insulating substrate by a sputtering method or an electrolytic plating method, wherein the insulating substrate and the copper conductor layer form a COF substrate;

s2, punching a COF substrate to punch a plurality of square holes and shot through holes, and adding a round hole between the two square holes on the existing basis, wherein the round hole is a new exposure alignment MARK;

s3, conveying the coated COF substrate from the left winding-out end to the right winding-in end for a certain length, and adsorbing the COF substrate by a vacuum adsorption plate, wherein at the moment, the alignment MARK on the glass film is projected onto a positioning hole of the COF substrate through a projection lens, and a CCD camera below the positioning hole simultaneously captures the MARK on the COF substrate and the alignment MARK of the glass film projected onto the positioning hole of the COF substrate;

and S4, when the centers of the two alignment MARKs are overlapped and exposure is carried out, and when the center positions are deviated, fine adjustment is carried out on the table top below the vacuum suction plate until the centers are overlapped.

2. The new punch pattern and exposure alignment MARK design method of a COF substrate according to claim 1, wherein: the insulating base material is made of polyimide materials, and the thickness of the insulating base material is 12.5-50 mu m.

3. The new punch pattern and exposure alignment MARK design method of a COF substrate according to claim 1, wherein: the diameter of the round hole is 1mm, and the distance between the two square holes is 4.75 mm.

Technical Field

The invention relates to the technical field of COF substrate exposure, in particular to a design method of a new punching pattern and exposure alignment MARK of a COF substrate.

Background

Nowadays, electronic devices are becoming thinner, multifunctional and more dense, chip-mounted package substrates are also shifting from traditional FPCs to COFs, COF products are meeting the requirements of packaging in narrow spaces, the line width/line distance is becoming smaller and smaller, generally around 10/10um, at present, COF products are produced mainly by three methods, namely, a subtractive method, a semi-additive method and an additive method, the subtractive method is used as the main method for producing traditional FPCs, and the line width limit is 20 μm due to the influence of the thickness of a resist layer and the lateral etching phenomenon, while the additive method can produce finer circuits, but has the problems of complex process, high cost and the like. At present, the semi-additive method is used for manufacturing fine lines to become the mainstream in combination with market demands and technical conditions.

Generally, a round hole or a square hole obtained by punching is used as an exposure alignment MARK to position a MARK of a glass film and then expose a substrate, relatively speaking, the precision of the round hole is higher than that of the square hole and a CCD is easy to capture a central point, but a rear-section slitting device only needs to carry a square-hole gear after being positioned and carried by a sensor at present, and under the influence, the square hole becomes a main hole type of the punching, while the existing COF production process is to position the 1.42mm square hole obtained by punching as the alignment MARK and the MARK of the glass film and then expose the substrate, and the technology has the following defects:

1. the exposure precision is not high, the CCD captures the punched substrate alignment MARK and the glass film alignment MARK before exposure, when the centers of the two MARKs are deviated, the worktable surface can be finely adjusted, and after repeated transportation for many times, the alignment to the previous or next square hole is possible during fine adjustment, so that the problems of overexposure and exposure omission are caused.

2. The processing time is long, the square hole is not easy to capture the central point, the processing time is long, and the efficiency is low.

Disclosure of Invention

Technical problem to be solved

Aiming at the defects of the prior art, the invention provides a new punching pattern and an exposure alignment MARK design method of a COF substrate, which solves the defects and shortcomings in the prior art.

(II) technical scheme

In order to achieve the purpose, the invention is realized by the following technical scheme: a new punching pattern and exposure alignment MARK design method of COF substrate comprises the following steps:

s1, preparing an insulating substrate, forming a copper conductor layer on one side of the insulating substrate by a sputtering method or an electrolytic plating method, wherein the insulating substrate and the copper conductor layer form a COF substrate;

s2, punching a COF substrate to punch a plurality of square holes and shot through holes, and adding a round hole between the two square holes on the existing basis, wherein the round hole is a new exposure alignment MARK;

s3, conveying the coated COF substrate from the left winding-out end to the right winding-in end for a certain length, and adsorbing the COF substrate by a vacuum adsorption plate, wherein at the moment, the alignment MARK on the glass film is projected onto a positioning hole of the COF substrate through a projection lens, and a CCD camera below the positioning hole simultaneously captures the MARK on the COF substrate and the alignment MARK of the glass film projected onto the positioning hole of the COF substrate;

and S4, when the centers of the two alignment MARKs are overlapped and exposure is carried out, and when the center positions are deviated, fine adjustment is carried out on the table top below the vacuum suction plate until the centers are overlapped.

Preferably, the insulating base material is made of polyimide material, and the thickness of the insulating base material is 12.5-50 μm.

Preferably, the diameter of the round hole is 1mm, and the distance between the two square holes is 4.75 mm.

(III) advantageous effects

The invention provides a new punching pattern and exposure alignment MARK design method of a COF substrate. The method has the following beneficial effects:

through changing present square hole into the mode that the square hole adds the round hole, can change the production line at the minimum, under the prerequisite of control change cost, improve the accuracy and the efficiency of exposing, consequently, reduce because of the overexposure that exposure offset arouses and leak the problem of exposing, improve product yield and economic benefits.

Drawings

FIG. 1 is a schematic view of alignment exposure in the present invention;

FIG. 2 is a schematic view of a COF substrate structure according to the present invention;

FIG. 3 is a schematic view of the arrangement of the punching holes in the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.