阅读说明：本技术 一种断路器极柱的半导电屏蔽接地层 (Semi-conductive shielding grounding layer of breaker pole ) 是由 张东远 姜赞 侯峰 唐韬 于 2019-09-17 设计创作，主要内容包括：本发明涉及高压电气设备领域,尤其是一种断路器极柱的半导电屏蔽接地层,包括接地开关接口法兰、避雷器接口法兰、出线接口法兰、电压互感器接口法兰、隔离开关接口法兰、拉杆室法兰。半导电屏蔽接地层的正面和背面中轴线上开有4-10个通孔。隔离开关接口法兰外侧上、下、前、后的四个面上各有2条隔离法兰加强筋。电压互感器接口法兰前面和后面各有一条PT法兰加强筋。本发明解决了脱模时的负压问题和绝缘层与半导电屏蔽接地层移位问题,加强筋提高了法兰连接刚性,结构设计简单实用。(The invention relates to the field of high-voltage electrical equipment, in particular to a semi-conductive shielding ground layer of a pole of a circuit breaker. The axis on the front and back of the semi-conductive shielding grounding layer is provided with 4-10 through holes. And 2 isolating flange reinforcing ribs are respectively arranged on the upper surface, the lower surface, the front surface and the rear surface of the outer side of the isolating switch interface flange. And PT flange reinforcing ribs are respectively arranged in front of and behind the voltage transformer interface flange. The invention solves the problems of negative pressure during demoulding and the displacement of the insulating layer and the semi-conductive shielding grounding layer, the reinforcing rib improves the rigidity of flange connection, and the structural design is simple and practical.)

1. The utility model provides a semi-conductive shielding ground plane of circuit breaker utmost point post, includes earthing switch interface flange (1), arrester interface flange (2), interface flange (3) of being qualified for the next round of competitions, voltage transformer interface flange (5), isolator interface flange (6), pull rod room flange (8), its characterized in that: the outgoing line interface flange (3) is positioned at the top of the semi-conductive shielding ground layer, the grounding switch interface flange (1) is positioned on the front surface of the upper part of the semi-conductive shielding ground layer, the arrester interface flange (2) is positioned on the right side of the upper part of the semi-conductive shielding ground layer, the isolating switch interface flange (6) is positioned on the left side of the middle part of the semi-conductive shielding ground layer, the voltage transformer interface flange (5) is positioned on the right side of the middle part of the semi-conductive shielding ground layer, and the pull rod chamber flange (8); 4-10 through holes (10) are formed on the central axis of the front surface and the back surface of the semiconductive shielding grounding layer; an isolating flange reinforcing rib (7) is arranged on the outer side of the isolating switch interface flange (6), and a PT flange reinforcing rib (4) is arranged on the outer side of the voltage transformer interface flange (5).

2. The semi-conductive shielding ground plane of a breaker pole of claim 1, wherein: an upper injection port (9) is arranged on the left side of the upper part of the semi-conductive shielding grounding layer, and a lower injection port (11) is arranged on the right side of the middle part of the semi-conductive shielding grounding layer.

3. The semi-conductive shielding ground plane of a breaker pole of claim 1, wherein: the manufacturing method of the semi-conductive shielding grounding layer of the pole of the circuit breaker comprises the following steps: firstly, installing an inner die and an outer die of a semiconductive shield grounding layer on an injection molding machine; heating the mold to 120-180 deg.c; filling the semiconductive material into an injection molding machine and heating to 70-90 ℃; fourthly, injecting materials into the die cavity under the pressure of 140-180 kg/cm; fifthly, after filling the materials, keeping the temperature and the pressure for 3 hours; sixthly, demoulding: firstly, separating the outer mold; taking out the inner film insert in sections; then, 4-10 through holes are formed in the axial line of the front surface and the back surface of the semi-conductive shielding grounding layer by a puncher, and compressed air is used for inflating the through holes; and finally, taking out the semiconductive shielding layer from the inner die head.

Technical Field

The invention relates to the field of high-voltage electrical equipment, in particular to a semi-conductive shielding grounding layer of a pole of a circuit breaker.

Background

Publication No. 207834191U discloses an electrified locomotive circuit breaker post, including ground terminal post interface, arrester interface, voltage transformer interface, operating device pull rod interface, isolation terminal post interface, outlet port and vacuum interrupter. The outer surface of the pole of the circuit breaker is a semi-conductive shielding grounding layer, ethylene propylene diene monomer is used as a base material, a proper amount of graphite powder is added as a filler, and the circuit breaker is produced by an injection molding process. The existing production process is to pre-press and inject the semiconductive shielding grounding layer in a mold, and then to press and inject the insulation layer. Because the semiconductive shielding grounding layer has a complex structure, and simultaneously the ethylene propylene diene monomer has certain toughness, negative pressure is easily formed when the semiconductive shielding grounding layer is separated from a mold, so that the demolding is difficult. Meanwhile, when the insulating layer is subjected to secondary pressure injection, a displacement phenomenon also occurs between the semiconductive shielding grounding layer and the insulating layer. There is therefore a need for an improved semi-conductive shield for existing breaker poles.

Disclosure of Invention

In order to solve the technical defects in the prior art, the invention aims to provide a semi-conductive shielding ground layer of a breaker pole, which is used for solving the problems of difficult demoulding, displacement and the like in the process of pressure injection of the breaker pole.

In order to achieve the purpose, the technical scheme of the invention is as follows: the utility model provides a semi-conductive shielding ground plane of circuit breaker utmost point post, including earthing switch interface flange, arrester interface flange, the interface flange of being qualified for the next round of competitions, voltage transformer interface flange, isolator interface flange, pull rod room flange, the interface flange of being qualified for the next round of competitions is located the top on semi-conductive shielding ground plane, earthing switch interface flange is located the upper portion on semi-conductive shielding ground plane openly, arrester interface flange is located the upper portion right side on semi-conductive shielding ground plane, isolator interface flange is located the middle part left side on semi-conductive shielding ground plane, voltage transformer interface flange is located the right side in semi-conductive shielding ground plane's middle part, pull. The axis on the front and back of the semi-conductive shielding grounding layer is provided with 4-10 through holes. The upper part left side of semiconduction shielding ground plane is equipped with the material filling opening, and the middle part right side of semiconduction shielding ground plane is equipped with the material filling opening. And 2 isolating flange reinforcing ribs are respectively arranged on the upper surface, the lower surface, the front surface and the rear surface of the outer side of the isolating switch interface flange. And PT flange reinforcing ribs are respectively arranged on the front and the back of the outer side of the voltage transformer interface flange.

the mold for the semiconductive shielding grounding layer is composed of an outer mold and an inner mold. The outer die is divided into a left die and a right die by the central axis of the semiconductive shielding grounding layer. The inner film is formed by combining an inner die head and inserts at the ends of the flanges.

The manufacturing method of the semi-conductive shielding grounding layer of the pole of the circuit breaker comprises the following steps: 1. installing inner and outer dies of the semi-conductive shielding grounding layer on an injection molding machine; 2. heating the mould to 120-180 ℃; 3. filling the semiconductive material into an injection molding machine and heating to 70-90 ℃; 4. injecting materials into the die cavity at the pressure of 140-180 kg/cm; 5. after filling, heat preservation and pressure maintaining are carried out for 3 hours; 6. demolding: firstly, separating the outer mold; taking out the inner film insert in sections; then, 4-10 through holes are formed in the axial line of the front surface and the back surface of the semi-conductive shielding grounding layer by a puncher, and compressed air is used for inflating the through holes; and finally, taking out the semiconductive shielding layer from the inner die head.

The optimal temperature of the mould is 150 ℃, the optimal injection pressure is 160kg/cm, and the optimal temperature for heating the semiconductive material is 80 ℃.

The ethylene propylene diene monomer rubber material is a high-strength high-hardness rubber and plastic formula, can be recycled, and belongs to an environment-friendly material. The ethylene propylene diene monomer rubber has good toughness and has contractibility on the inner mold core, and meanwhile, the semiconductive shielding grounding layer is tightly combined with the outer wall of the inner mold core, so that the demolding is difficult. 4-10 through holes are formed in the axial line of the front surface and the back surface of the semi-conductive shielding grounding layer, and compressed air is used for inflating the through holes, so that vacuum negative pressure is prevented from being formed on the outer wall of the inner film core during demolding, and external thrust is formed to push the semi-conductive shielding grounding layer away from the inner film core, and the problem of difficult demolding is solved.

The ethylene propylene diene monomer has good toughness, so that the rigidity is insufficient during flange connection. Therefore, the isolation flange reinforcing ribs and the PT flange reinforcing ribs are designed for enhancing the rigidity of the flange.

When the insulating layer is injected by secondary pressure, the displacement phenomenon between the semi-conductive shielding grounding layer and the insulating layer also exists because the pressure reaches 140-180 kg/cm. In the process of pressing and injecting the inner insulating layer of the pole, the through hole can also play a role in releasing gas in the inner cavity of the semi-conductive shielding grounding layer, and when the insulating material flows through the through hole, the through hole is filled with the insulating material to form a convex thorn, so that the functions of fixing the inner insulating layer and preventing the semi-conductive shielding grounding layer from shifting are achieved. After the pole is integrally formed, the semi-conductive material is uniformly sprayed and vulcanized at each through hole of the semi-conductive shielding grounding layer, so that the influence of the through holes on the shielding effect is avoided.

Due to the adoption of the scheme, compared with the prior art, the invention has the following beneficial effects: by adopting the through hole design, the problems of negative pressure during demoulding and the displacement of the insulating layer and the semi-conductive shielding grounding layer are solved; the reinforcing ribs improve the connection rigidity of the flange; the structural design is simple and practical.

Drawings

FIG. 1 is a schematic view of the present invention;

FIG. 2 is a front view of the present invention;

FIG. 3 is a cross-sectional view of the present invention;

The reference numbers illustrate: 1. earthing switch interface flange, 2, arrester interface flange, 3, the interface flange of being qualified for the next round of competitions, 4, PT flange strengthening rib, 5, voltage transformer interface flange, 6, isolator interface flange, 7, isolation flange strengthening rib, 8, pull rod room flange, 9, go up the sprue, 10, through-hole, 11, lower sprue.

Detailed Description

The invention will now be described in further detail with reference to specific embodiments of the invention as illustrated in the accompanying drawings in which: