阅读说明：本技术 光束弯折器 (light beam bending device ) 是由 村上武司 于 2019-06-10 设计创作，主要内容包括：本发明提供一种光束弯折器,能够提高由光束弯折器弯曲后的电子射线的集束性。在沿着通过光束弯折器(12)的内侧曲面(17)与外侧曲面(19)之间的电子射线的行进方向的第一剖面中,设定成内侧曲面的曲率和外侧曲面的曲率分别恒定,内侧曲面的曲率中心与外侧曲面的曲率中心一致。在与电子射线的行进方向垂直的第二剖面中,设定成内侧曲面的曲率和外侧曲面的曲率分别恒定,内侧曲面的曲率中心与外侧曲面的曲率中心一致。第二剖面中的内侧曲面的曲率半径被设定得比第一剖面中的内侧曲面的曲率半径大,第二剖面中的外侧曲面的曲率半径被设定得比第一剖面中的外侧曲面的曲率半径大。(The invention provides a beam bender capable of improving the convergence of electron beams bent by the beam bender. In a first cross section along the traveling direction of an electron beam passing between an inner curved surface (17) and an outer curved surface (19) of a beam bender (12), the curvature of the inner curved surface and the curvature of the outer curved surface are set to be constant, and the center of curvature of the inner curved surface and the center of curvature of the outer curved surface are aligned. In a second cross section perpendicular to the traveling direction of the electron beam, the curvature of the inner curved surface and the curvature of the outer curved surface are set to be constant, and the center of curvature of the inner curved surface and the center of curvature of the outer curved surface coincide with each other. The radius of curvature of the inner curved surface in the second cross section is set larger than the radius of curvature of the inner curved surface in the first cross section, and the radius of curvature of the outer curved surface in the second cross section is set larger than the radius of curvature of the outer curved surface in the first cross section.)

1. A beam bender comprising an inner electrode having an inner curved surface and an outer electrode having an outer curved surface for bending an electron beam passing between said inner curved surface and said outer curved surface by means of an electric field generated by applying different potentials to said inner electrode and said outer electrode, respectively, the beam bender being characterized in that,

The setting is as follows: a curvature of the inner curved surface and a curvature of the outer curved surface are respectively constant in a first cross section along a traveling direction of the electron ray passing between the inner curved surface and the outer curved surface, a center of curvature of the inner curved surface coincides with a center of curvature of the outer curved surface,

The setting is as follows: a curvature of the inner curved surface and a curvature of the outer curved surface are respectively constant in a second cross section perpendicular to a traveling direction of the electron beam, a center of curvature of the inner curved surface coincides with a center of curvature of the outer curved surface,

A radius of curvature of the inner curved surface in the second cross section is set larger than a radius of curvature of the inner curved surface in the first cross section,

The radius of curvature of the outer curved surface in the second cross section is set larger than the radius of curvature of the outer curved surface in the first cross section.

2. The beam bender according to claim 1,

In the second cross section, a normal line of the inner curved surface passing through a center position of the inner curved surface coincides with a normal line of the outer curved surface passing through a center position of the outer curved surface, a position where the electron beam passes is set on the normal line, a curved surface shape of the inner curved surface has a symmetrical shape centering on the normal line, and a curved surface shape of the outer curved surface has a symmetrical shape centering on the normal line.

3. The beam bender according to claim 1,

Setting a radius of curvature of the inner curved surface and a radius of curvature of the outer curved surface in the second cross section such that: in the first cross section, a shift of a position where an electron beam incident in parallel with a center orbit of an electron beam incident between the inner curved surface and the outer curved surface passes between the inner curved surface and the outer curved surface and then intersects with the center orbit is reduced.

4. The beam bender according to claim 1,

The radius of curvature of the inner curved surface in the second cross section is set to be greater than 1 time the radius of curvature of the inner curved surface in the first cross section and to be 3 times or less the radius of curvature of the inner curved surface in the first cross section,

The radius of curvature of the outer curved surface in the second cross section is set to be greater than 1 time the radius of curvature of the outer curved surface in the first cross section and to be 3 times or less the radius of curvature of the outer curved surface in the first cross section.

Technical Field

The present invention relates to a beam bender for bending a trajectory of electron rays.

background

Conventionally, a beam bender for bending an electron beam is used in an electron microscope or the like. For example, in an electron microscope of a multi-beam scanning system, a beam bender for bending a plurality of trajectories of electron beams (multi-beam) has been proposed (for example, see patent document 1). In an electron beam apparatus such as an electron microscope, a primary optical system (an optical system for irradiating an electron beam emitted from an electron gun to a sample W) and a secondary optical system (an optical system for guiding a secondary electron emitted from the sample W to a detector) need to be arranged in a limited space in a housing.

For example, in the multi-beam SEM, the trajectories of primary electrons and the trajectories of secondary electrons are often overlapped in the vicinity of the sample, and a wien filter and a beam bender using a magnetic field are often used to separate these trajectories. However, in these optical elements, since aberration and dispersion occur more as the curvature angle of the track is larger, it is particularly desirable to minimize the curvature angle of the primary electron beam, which places importance on resolution, in the scanning microscope. However, if the trajectory of the electron beam of the primary optical system and the trajectory of the secondary electron of the secondary optical system are close to each other, the device constituting the primary optical system and the device constituting the secondary optical system interfere with each other, and it may be difficult or impossible to arrange the electron beam in a limited space in the housing. In such a case, the trajectory of the secondary electrons of the secondary optical system is largely curved by using the beam bender, and the primary optical system and the secondary optical system can be arranged in the housing. For example, a beam bender is used in an electron microscope or the like as described above.

However, the conventional beam bender has a problem that the convergence of the electron beam bent by the beam bender is not high. More specifically, there is a problem that the electron beam entering in parallel with the center trajectory of the electron beam at a predetermined distance passes through the beam bender and then largely deviates in the position where the electron beam intersects the center trajectory.

Disclosure of Invention

In view of the above-described problems, an object of the present invention is to provide a beam bender capable of improving the convergence of electron beams bent by the beam bender.

A beam bender of an embodiment of the present invention includes an inner electrode having an inner curved surface and an outer electrode having an outer curved surface for bending an electron beam passing between the inner curved surface and the outer curved surface by means of an electric field generated by applying different potentials to the inner electrode and the outer electrode, respectively, wherein: in a first cross section along a traveling direction of the electron beam passing between the inner curved surface and the outer curved surface, a curvature of the inner curved surface and a curvature of the outer curved surface are respectively constant, a center of curvature of the inner curved surface coincides with a center of curvature of the outer curved surface, and the first cross section is set to: in a second cross section perpendicular to the traveling direction of the electron beam, the curvature of the inner curved surface and the curvature of the outer curved surface are constant, the center of curvature of the inner curved surface and the center of curvature of the outer curved surface coincide with each other, the radius of curvature of the inner curved surface in the second cross section is set to be larger than the radius of curvature of the inner curved surface in the first cross section, and the radius of curvature of the outer curved surface in the second cross section is set to be larger than the radius of curvature of the outer curved surface in the first cross section.

Drawings

Fig. 1 is an explanatory view of an electron beam apparatus (multi-beam scanning electron microscope) to which a beam bender according to an embodiment of the present invention is applied.

Fig. 2 is a sectional view (sectional view a-a of fig. 3) of a beam bender according to an embodiment of the present invention.

Fig. 3 is a sectional view (sectional view B-B of fig. 2) of a beam bender according to an embodiment of the present invention.

Fig. 4 is an explanatory view of the convergence of electron beams in the beam bender according to the embodiment of the present invention.

Fig. 5 is a flowchart showing a flow of voltage adjustment of the beam bender according to the embodiment of the present invention.

Fig. 6 is a graph showing the bundling property of the beam bender according to the embodiment of the present invention.

Description of the symbols

1 electron beam apparatus

2 Primary optical system

3 Secondary optical System

4 working table

5 Electron gun

6 condensing lens

7 multi-opening plate

8 condensing lens

9 deflector

10 Wien filter

11 objective lens

12 light beam bender

13 projection lens

14 multi-opening detection plate

15 detector

16 voltage control unit

17 inner curved surface

18 inner electrode

19 outer curved surface

20 outer electrode

21 ground electrode

Detailed Description

Hereinafter, the substrate drying apparatus of the embodiment will be described. The embodiments described below are examples of the case of implementing the present technology, and the present technology is not limited to the specific configurations described below. In the implementation of the present technology, a specific configuration corresponding to the embodiment can be adopted as appropriate.

A beam bender according to an embodiment of the present invention includes an inner electrode having an inner curved surface and an outer electrode having an outer curved surface for bending an electron beam passing between the inner curved surface and the outer curved surface by means of electric fields generated by applying different potentials to the inner electrode and the outer electrode, respectively, and is set such that a curvature of the inner curved surface and a curvature of the outer curved surface are constant, respectively, in a first section along a traveling direction of the electron beam passing between the inner curved surface and the outer curved surface, a center of curvature of the inner curved surface coincides with a center of curvature of the outer curved surface, and in a second section perpendicular to the traveling direction of the electron beam, a curvature of the inner curved surface and a curvature of the outer curved surface are constant, respectively, and a center of curvature of the inner curved surface coincides with a center of curvature of the outer curved surface, the radius of curvature of the inner curved surface in the second cross section is set larger than the radius of curvature of the inner curved surface in the first cross section, and the radius of curvature of the outer curved surface in the second cross section is set larger than the radius of curvature of the outer curved surface in the first cross section.

With this configuration, the convergence of the electron beam bent by the beam bender can be improved. More specifically, the deviation of the position where the electron beam, which is incident in parallel with the center orbit of the electron beam incident between the inner curved surface and the outer curved surface, crosses the center orbit after passing between the inner curved surface and the outer curved surface, can be reduced.

In the beam bender according to the first aspect of the present invention, a normal line of the inner curved surface passing through a center position of the inner curved surface may be aligned with a normal line of the outer curved surface passing through a center position of the outer curved surface in the second cross section, a position where the electron beam passes may be set on the normal line, the curved surface shape of the inner curved surface may have a symmetrical shape with the normal line as a center, and the curved surface shape of the outer curved surface may have a symmetrical shape with the normal line as a center.

According to this configuration, since the inner curved surface and the outer curved surface have symmetrical shapes, the symmetry of the electron beam bent by the beam bender can be improved.

In the beam bender according to an embodiment of the present invention, the radius of curvature of the inner curved surface and the radius of curvature of the outer curved surface in the second cross section may be set so that: in the first cross section, a shift of a position where an electron beam incident in parallel with a predetermined distance from a center orbit of the electron beam passing through a midpoint between the inner curved surface and the outer curved surface crosses the center orbit is reduced after passing through between the inner curved surface and the outer curved surface.

According to this configuration, by appropriately setting the radius of curvature of the inner curved surface and the radius of curvature of the outer curved surface in the second cross section, the convergence of the electron beam bent by the beam bender can be improved.

In the beam bender according to the one embodiment of the present invention, the radius of curvature of the inner curved surface in the second cross section may be set to be greater than 1 time the radius of curvature of the inner curved surface in the first cross section and to be 3 times or less the radius of curvature of the inner curved surface in the first cross section, and the radius of curvature of the outer curved surface in the second cross section may be set to be greater than 1 time the radius of curvature of the outer curved surface in the first cross section and to be 3 times or less the radius of curvature of the outer curved surface in the first cross section.

According to this configuration, by appropriately setting the radius of curvature of the inner curved surface and the radius of curvature of the outer curved surface in the second cross section, the convergence of the electron beam bent by the beam bender can be improved.

According to the present invention, the convergence of the electron beam bent by the beam bender can be improved. Further, by using the beam bender of the present invention as a beam splitter, improvement of the beam splitting characteristic of the electron beam can be expected.

Hereinafter, a beam bender according to an embodiment of the present invention will be described with reference to the drawings. In this embodiment, a beam bender used in an electron beam device such as a multi-beam scanning electron microscope is exemplified.

Fig. 1 is an explanatory diagram showing a structure of an electron beam apparatus (multi-beam scanning electron microscope) to which the beam bender of the present embodiment is applied. As shown in fig. 1, the electron beam apparatus 1 includes: a primary optical system 2 for irradiating the sample W with an electron beam; and a secondary optical system 3 for detecting secondary electrons emitted from the sample W. The sample W is, for example, a semiconductor wafer, and is placed on the stage 4.

The primary optical system 2 includes: an electron gun 5 for emitting electron beams; a condenser lens 6 for condensing electron beams (electron beams) emitted from the electron gun 5; and a multi-aperture plate 7 disposed downstream of the condenser lens 6. The multi-aperture plate 7 has a plurality of apertures and has a function of generating a plurality of electron beams (multi-beam) from the electron beams. In addition, the primary optical system 2 includes: a condenser lens 8 for reducing the size of the electron beam; a deflector 9 for scanning the electron beam; wien filter 10(E × B); and an objective lens 11.

The secondary optical system 3 includes: a beam bender 12, the beam bender 12 bending the secondary electrons separated from the primary optical system 2 by the wien filter 10; a projection lens 13 of one or more stages, the projection lens 13 being disposed downstream of the beam bender 12; a multi-opening detection plate 14, the multi-opening detection plate 14 having a plurality of openings corresponding to the plurality of openings of the multi-opening plate 7; and a plurality of detectors 15, the plurality of detectors 15 being disposed in proximity to positions corresponding to the plurality of openings of the multi-opening detection plate 14. The beam bender 12 includes a voltage control unit 16 for performing voltage adjustment (described later).

Fig. 2 and 3 are sectional views for explaining the structure of the beam bender 12. As shown in fig. 2 and 3, the beam bender 12 includes: an inner electrode 18 having an inner curved surface 17; an outer electrode 20 having an outer curved surface 19; and a ground electrode 21 disposed outside the inner electrode 18 and the outer electrode 20. The beam bender 12 has the following functions: electron beams (secondary electrons) passing between the inner curved surface 17 and the outer curved surface 19 are bent by a predetermined angle by electric fields generated by applying different potentials to the inner electrode 18 and the outer electrode 20, respectively (see fig. 4). Fig. 2 is a cross-sectional view (a-a cross-sectional view in fig. 3) of a first cross-section along the traveling direction of the electron beam passing between the inner curved surface 17 and the outer curved surface 19, and fig. 3 is a cross-sectional view (B-B cross-sectional view in fig. 2) of a second cross-section perpendicular to the traveling direction of the electron beam.

As shown in fig. 2, in the first cross section (cross section along the traveling direction of the electron beam), the curvature of the inner curved surface 17 and the curvature of the outer curved surface 19 are set to be constant, and the center of curvature of the inner curved surface 17 and the center of curvature of the outer curved surface 19 coincide with each other. In fig. 2, the radius of curvature of the inner curved surface 17 in the first cross section is represented by Ri1 (e.g., Ri1 ═ 65mm), the radius of curvature of the outer curved surface 19 in the first cross section is represented by Ro1 (e.g., Ro1 ═ 75mm), the radius of curvature of the center orbit of the electron beam passing through the midpoint between the inner curved surface 17 and the outer curved surface 19 in the first cross section is represented by R1 (e.g., R1 ═ 70mm), and the center of curvature of the inner curved surface 17 and the center of curvature of the outer curved surface 19 in the first cross section are represented by C1.

as shown in fig. 3, in the second cross section (cross section perpendicular to the traveling direction of the electron beam), the curvature of the inner curved surface 17 and the curvature of the outer curved surface 19 are set to be constant, and the center of curvature of the inner curved surface 17 and the center of curvature of the outer curved surface 19 are set to coincide with each other. In fig. 3, the radius of curvature of the inner curved surface 17 in the second cross section is represented by Ri2 (for example, Ri2 is 75mm, 115mm), the radius of curvature of the outer curved surface 19 in the second cross section is represented by Ro2 (for example, Ro2 is 85mm, 125mm), the radius of curvature of the center orbit of the electron beam passing between the inner curved surface 17 and the outer curved surface 19 in the second cross section is represented by R2 (for example, R2 is 80mm, 120mm), and the center of curvature of the inner curved surface 17 and the center of curvature of the outer curved surface 19 in the second cross section are represented by C2.

in this case, the radius of curvature of the inner curved surface 17 in the second cross section (for example, Ri 2-75 mm, 115mm) is set to be larger than the radius of curvature of the inner curved surface 17 in the first cross section (for example, Ri 1-65 mm). The radius of curvature of the outer curved surface 19 in the second cross section (for example, Ro2 equal to 85mm or 125mm) is set to be larger than the radius of curvature of the outer curved surface 19 in the first cross section (for example, Ro1 equal to 75 mm). The radius of curvature of the center orbit in the second cross section (for example, R2 ═ 80mm or 120mm) is set larger than the radius of curvature of the center orbit in the first cross section (for example, R1 ═ 70 mm).

As shown in fig. 3, in the second cross section (cross section perpendicular to the traveling direction of the electron beam), a normal line L of the inner curved surface 17 passing through the center position of the inner curved surface 17 coincides with a normal line L of the outer curved surface 19 passing through the center position of the outer curved surface 19, and the position where the electron beam passes is set on the normal line L. The curved surface shape of the inner curved surface 17 has a symmetrical shape (a left-right symmetrical shape in fig. 3) with the normal line L as the center, and the curved surface shape of the outer curved surface 19 has a symmetrical shape (a left-right symmetrical shape in fig. 3) with the normal line as the center.

In this case, as shown in fig. 4(a), under the two-direction bundling condition, the radius of curvature of the inner curved surface 17 (for example, Ri2 ═ 75mm, 115mm) and the radius of curvature of the outer curved surface 19 (for example, Ro2 ═ 85mm, 125mm) in the second cross section are set so that: in the first cross section (cross section along the traveling direction of the electron beam), the deviation of the position where the electron beam entering in parallel with the center orbit of the electron beam passing between the inner curved surface 17 and the outer curved surface 19 crosses the center orbit after passing between the inner curved surface 17 and the outer curved surface 19 becomes small.

In order to reduce the deviation of the position where the electron beam incident parallel to the center orbit of the electron beam passing between the inner curved surface 17 and the outer curved surface 19 in the first cross section (cross section along the traveling direction of the electron beam) passes between the inner curved surface 17 and the outer curved surface 19 by a predetermined distance and then intersects the center orbit, it is preferable that the radius of curvature of the inner curved surface 17 in the second cross section is set to be larger than 1 time the radius of curvature of the inner curved surface 17 in the first cross section and equal to or smaller than 3 times the radius of curvature of the inner curved surface 17 in the first cross section (1 × Ri1 < Ri2 ≦ 3 × Ri1), the radius of curvature of the outer curved surface 19 in the second cross section is preferably set to be greater than 1 time the radius of curvature of the outer curved surface 19 in the first cross section and equal to or less than 3 times the radius of curvature of the outer curved surface 19 in the first cross section (1 × Ro1 < Ro2 ≦ 3 × Ro 1).

In the case of an electrostatic lens or an electromagnetic lens in which the center orbit is linear and rotationally symmetric, there is no phase dependency of the focal length of the electron beam incident in parallel with the center orbit at a predetermined distance. On the other hand, in the case where the central orbit is a curved line like the beam bender of the present invention, there is a phase dependency of the focal length of the electron beam incident in parallel with the central orbit at a predetermined distance from the central orbit with respect to the plane including the central orbit. Fig. 4(a) visually illustrates this. The respective trajectories of the central trajectory O of the electron beam, the trajectory a incident at a position directly above the central trajectory O in fig. 3, and the trajectory B incident at a position directly below the central trajectory O in fig. 3 are illustrated. After passing through the beam bender, the respective tracks first cross track a and then track B with track O. In this specification, the convergence is discussed in terms of the difference between the maximum value and the minimum value of the positions where the tracks of the light beams different in phase cross the center track. Here, this is referred to as an intersection position offset from the center track.

The amount of the cross position deviation from the center orbit also varies depending on the potentials applied to the inner electrode and the outer electrode, respectively. Fig. 4(b) shows the phase at the time of incidence of an electron beam for evaluating the amount of deviation of the intersection position with the center orbit by numerical simulation including electric field calculation and charged particle orbit calculation. The upper, lower, left, and right in fig. 4(b) correspond to the upper, lower, left, and right of the center orbit of the electron beam in fig. 3. In this case, as shown in fig. 4(b), positions where the electron beam entering in parallel with the center orbit O of the electron beam at a predetermined distance r in a phase of-90 degrees, -67.5 degrees, -45 degrees, -22.5 degrees, 0 degrees, 22.5 degrees, 45 degrees, 67.5 degrees, or 90 degrees passes between the inner curved surface 17 and the outer curved surface 19 and then intersects with the center orbit are calculated, and the intersection position deviation amount is calculated as the difference between the maximum value and the minimum value.

Fig. 5 is a flowchart showing a procedure when the voltages applied to the inner electrode and the outer electrode of the beam bender 12 are determined by numerical simulation. The voltage adjustment of the beam bender 12 is performed by the voltage control unit 16. In this case, a voltage V1+ V2 is applied to the inner electrode, and a voltage-V1 + V2 is applied to the outer electrode.

As shown in fig. 5, when adjusting the voltage of the beam bender 12, initial values of V1 and V2 are set (S1), and electric field calculation (S2) and trajectory calculation (S3) are performed by numerical simulation. Then, it is determined whether or not the bending angle of the electron beam (secondary electron) is a predetermined angle (for example, 30 degrees) (S4), and if the bending angle is not the predetermined angle (no in S4), the voltage V1 is adjusted (S5).

When the voltage V1 is adjusted so that the bending angle of the electron beam (secondary electrons) becomes a predetermined angle (for example, 30 degrees) (yes in S4), the deviation of the position where the electron beam, which is incident in parallel with the center orbit O of the electron beam (secondary electrons) apart from the predetermined distance r, crosses the center orbit after passing between the inner curved surface 17 and the outer curved surface 19 is measured.

in this case, the deviation of the position where the electron beam, which is incident in parallel with the center orbit O of the electron beam at a predetermined distance r from the center orbit O by-90 degrees, -67.5 degrees, -45 degrees, -22.5 degrees, 0 degrees, 22.5 degrees, 45 degrees, 67.5 degrees, or 90 degrees, crosses the center orbit after passing between the inner curved surface 17 and the outer curved surface 19, is measured.

Then, it is determined whether or not the measured amount of positional deviation is extremely small (S6), and if the amount of positional deviation is not extremely small (no in S6), the voltage V2 is adjusted (S7). If the positional deviation amount is extremely small as a result of adjusting the voltage V2, the voltage adjustment process is terminated. In addition, a known method such as the 2-variable newton-raphson method may be used in the series of steps.

The voltage condition obtained here is generally called a two-direction beam-focusing condition, and the amount of cross position deviation from the center track is extremely small but not 0. The amount of cross position shift in the two-direction beam converging condition is a value inherent to the mechanical structure of each beam bender, and the closer to 0 the value is, the better the beam bender is in the beam converging property.

In fig. 6, regarding a comparative example in which the radius of curvature of the center orbit of the electron beam in the second cross section is set to R2-70 mm, example 1 in which R2-80 mm is used, and example 2 in which R2-120 mm is used, positions where the electron beam incident in parallel with the center orbit O of the electron beam at a predetermined distance R is passed between the inner curved surface 17 and the outer curved surface 19 to which the potentials of the two-direction bundling conditions are applied and then intersects with the center orbit after passing through the positions between the inner curved surface 17 and the outer curved surface 19 to which the potentials of the two-direction bundling conditions are applied are expressed as relative values with respect to the intersection position of the phase 0 degree. As is clear from the graph of fig. 6, the amount of the cross position shift is smaller in example 1 than in comparative example, and further, the amount of the cross position shift is smaller in example 2 than in example 1. The radius of curvature R2 of the center orbit of the electron beam in the second cross section of the beam bender with a small cross position shift amount is determined in this manner.

According to the beam bender 12 of the present embodiment, the convergence of the electron beam bent by the beam bender 12 can be improved. More specifically, the deviation of the position where the electron beam, which is incident in parallel with the center orbit of the electron beam passing through the inner curved surface 17 and the outer curved surface 19 at a predetermined distance from the center orbit, crosses the center orbit after passing through the inner curved surface 17 and the outer curved surface 19 can be reduced.

In the above description, only the case where the deviation of the position where the electron beam, which is incident in parallel with the electron beam passing through the center orbit of the electron beam between the inner curved surface 17 and the outer curved surface 19 with a predetermined distance therebetween, intersects with the center orbit is small after passing through the space between the inner curved surface 17 and the outer curved surface 19, but the curvatures of the inner curved surface 17 and the outer curved surface 19, which have the smallest deviation of the position where the electron beam intersects with the center orbit, can be determined by the same method as long as the characteristics of the case where the electron beam, which is not parallel, is incident and the case where the separation distance is slightly different depending on the phase, are known in advance.

In the present embodiment, the inner curved surface 17 and the outer curved surface 19 have a symmetrical shape, and therefore, the symmetry of the electron beam bent by the beam bender 12 can be improved. Further, by appropriately setting the radius of curvature of the inner curved surface 17 and the radius of curvature of the outer curved surface 19 in the second cross section, the convergence of the electron beam bent by the beam bender 12 can be improved.

The embodiments of the present invention have been described above by way of examples, and the scope of the present invention is not limited to these examples, and may be modified and changed according to the purpose within the scope described in the claims.

The beam bender of the present invention may be used as a beam splitter for extracting only electrons having a predetermined energy from electron beams mixed with various energies. When the beam bender of the present invention is used as a beam splitter, the beam bender of the present invention has a high convergence of electron beams as described above, and therefore, the ratio of mixing of electron beams of other energies after beam splitting can be reduced, and the beam splitting characteristic (energy resolution) can be improved.

Industrial applicability

As described above, the beam bender of the present invention has an effect of improving the convergence of the electron beam bent by the beam bender, and is useful for an electron microscope and the like.