阅读说明：本技术 在高腐蚀性或侵蚀性半导体加工应用中使用的陶瓷材料组件 (Ceramic material components for use in highly corrosive or erosive semiconductor processing applications ) 是由 B·埃利奥特 D·雷克斯 于 2018-03-21 设计创作，主要内容包括：相对廉价陶瓷例如氧化铝与高磨损陶瓷例如蓝宝石的表皮或覆盖物的复合组件适合于在经受高腐蚀和/或侵蚀水平的半导体加工环境中使用。复合组件的设计寿命可比以前使用的部件显著更长。复合组件可具有与铝连接在一起的陶瓷件,使得接头不易受到复合组件可能暴露的腐蚀状况的损害。(A composite assembly of a relatively inexpensive ceramic, such as alumina, and a skin or covering of a high wear ceramic, such as sapphire, is suitable for use in semiconductor processing environments that are subject to high levels of corrosion and/or erosion. The design life of the composite assembly may be significantly longer than previously used components. The composite component may have ceramic pieces joined together with aluminum so that the joint is less susceptible to corrosion conditions to which the composite component may be exposed.)

1. A semiconductor processing chamber component for use in a highly aggressive environment, comprising a structural support portion having one or more defined high wear exposed surfaces, one or more wear surface layers, and one or more coupling layers coupling the one or more wear surface layers to the structural support portion, wherein the coupling layers comprise metallic aluminum.

2. The semiconductor processing chamber component of claim 1, wherein the structural support portion comprises aluminum oxide.

3. The semiconductor processing chamber component of claim 1, wherein the structural support portion comprises aluminum nitride.

4. The semiconductor processing chamber component of claim 2, wherein the one or more surface layers comprise sapphire.

5. The semiconductor processing chamber component of claim 3, wherein the one or more surface layers comprise sapphire.

6. The semiconductor processing chamber component of claim 4, wherein the coupling layer comprises greater than 99 wt% metallic aluminum.

7. The semiconductor processing chamber component of claim 5, wherein the coupling layer comprises greater than 99 wt% metallic aluminum.

8. The semiconductor processing chamber component of claim 4, wherein the industrial component is an injector nozzle, and wherein the structural support portion comprises an inner channel.

9. The semiconductor processing chamber component of claim 5, wherein the industrial component is an injector nozzle, and wherein the structural support portion comprises an inner channel.

10. The semiconductor process chamber component of claim 1, wherein the semiconductor process chamber component is a focus ring and wherein the structural support portion comprises a flange and a focus tube, and wherein the one or more wear surface layers are coupled to an inner surface of the focus tube.

11. The semiconductor processing chamber component of claim 10, wherein the structural support portion comprises aluminum oxide.

12. The semiconductor processing chamber component of claim 10, wherein the structural support portion comprises aluminum nitride.

13. The semiconductor processing chamber component of claim 11, wherein the one or more surface layers comprise sapphire.

14. The semiconductor processing chamber component of claim 12, wherein the one or more surface layers comprise sapphire.

15. The semiconductor process chamber component of claim 1, wherein the semiconductor process chamber component is an edge ring adapted to support a wafer during processing.

16. The semiconductor processing chamber component of claim 15, wherein the structural support portion comprises aluminum oxide.

17. The semiconductor processing component of claim 16, wherein the one or more surface layers comprise sapphire.

18. The semiconductor processing chamber component of claim 15, wherein the structural support portion comprises aluminum nitride.

19. The semiconductor processing component of claim 18, wherein the one or more surface layers comprise sapphire.

20. A focus ring suitable for use in a highly aggressive environment, comprising a flange, a focus tube, and a connection layer connecting the flange to the tube, wherein the connection layer comprises metallic aluminum.

21. The focus ring of claim 20, wherein the flange comprises aluminum oxide.

22. The focus ring of claim 21, wherein the focus tube comprises sapphire.

23. The focus ring of claim 20, wherein the flange comprises aluminum nitride.

24. The focus ring of claim 23, wherein the focus tube comprises sapphire.

25. A method for fabricating a semiconductor processing chamber component for use in a highly aggressive environment, comprising the steps of: disposing one or more surface wear layers on a semiconductor processing chamber component main support structure, wherein one or more braze layers are disposed between the one or more surface wear layers and the support structure, the braze layers comprising metallic aluminum, placing a pre-brazed subassembly in a process chamber, removing oxygen from the process chamber and attaching the surface wear layer to the main support structure by heating to a temperature greater than 770 ℃, thereby attaching the surface wear layer to the main support structure using a gas tight joint.

26. A method according to claim 25, wherein the step of removing oxygen from the process chamber comprises applying a vacuum to a pressure of less than 1x10E "4 during heating of the component.

27. The method as claimed in claim 25, wherein the main support structure comprises aluminum nitride.

28. The method of claim 27, wherein the one or more surface layers comprise sapphire.

29. A method according to claim 28, wherein the brazing layer comprises greater than 99% by weight metallic aluminium.

30. The method according to claim 25 wherein the primary support structure comprises alumina.

31. The method of claim 30, wherein the one or more surface layers comprise sapphire.

32. The method of claim 31, wherein the braze layer comprises greater than 99 wt% metallic aluminum.

33. The method as claimed in claim 32, wherein the bonding temperature is in the range of 770-1200 ℃.

34. The method of claim 25, wherein the braze layer comprises greater than 99 wt% metallic aluminum.

35. The method as claimed in claim 34, wherein the bonding temperature is in the range of 770-1200 ℃.

Technical Field

The present invention relates to corrosion resistant components, i.e., ceramic components having high wear materials on high wear surfaces.