阅读说明：本技术 一种基于集磁器的icp等离子源形成装置及方法 (A kind of ICP plasma source formation device and method based on collection chinaware ) 是由 金星 贺莹 夏伟 于 2019-08-16 设计创作，主要内容包括：本发明涉及一种基于集磁器的ICP等离子源形成装置及方法。装置包括：高频感应线圈、石英矩管和集磁装置；所述石英矩管包括三层进气通道,分别通入冷却气、辅助气、雾化气+样品气溶胶；所述集磁装置包括集磁器和石英空腔托槽；所述高频感应线圈置于所述石英矩管端部；所述集磁装置置于所述高频感应线圈内孔处的石英空腔内；等离子源形成方法如下：向高频感应线圈通入高频电流,产生高频电磁场；集磁装置形成环形涡流,阻止磁力线穿透集磁器,磁场强度得到增强；本发明的有益效果是：在降低装置成本的情况下,提高了磁场利用率及磁场强度,减少了系统消耗功率。(The present invention relates to a kind of ICP plasma sources based on collection chinaware to form device and method.Device includes: radio-frequency induction coil, quartzy quarter bend sum aggregate magnetic device；The quartz quarter bend includes three layers of inlet channel, each leads into cooling air, auxiliary gas, atomization gas+sample aerosol；The collection magnetic device includes collection chinaware and quartzy cavity bracket；The radio-frequency induction coil is placed in the quartzy quarter bend end；The collection magnetic device is placed in the quartzy cavity at the radio-frequency induction coil inner hole；Plasma source forming method is as follows: being passed through high-frequency current to radio-frequency induction coil, generates electromagnetic field of high frequency；Collect magnetic device and form vortex ring, prevents the magnetic line of force from penetrating collection chinaware, magnetic field strength is enhanced；The beneficial effects of the present invention are: improving magnetic field utilization rate and magnetic field strength in the case where reducing installation cost, reduce system consumption power.)

1. a kind of ICP plasma source based on collection chinaware forms device, it is characterised in that: specifically include: radio-frequency induction coil (1), quartzy quarter bend (2) sum aggregate magnetic device (3)；The quartz quarter bend (2) is cylinder, radio-frequency induction coil (1) setting In the upper end of the quartzy quarter bend (2), and it is arranged along side surrounding；The quartz quarter bend (2) is equipped with the high-frequency induction The corresponding position of coil (1) is equipped with circular quartz cavity, the shape size and collection magnetic device (3) Xiang Shi of the quartz cavity It answers, the collection magnetic device (3) is set in the quartzy cavity.

2. a kind of ICP plasma source based on collection chinaware as described in claim 1 forms device, it is characterised in that: the stone English quarter bend (2) is equipped with inlet channel, and the inlet channel has three layers, be respectively used to be passed through cooling air, auxiliary gas and atomization gas+ Sample aerosol.

3. a kind of ICP plasma source based on collection chinaware as described in claim 1 forms device, it is characterised in that: the collection Magnetic device (3) includes collection chinaware and quartzy cavity bracket；The shape size of the quartz cavity bracket and the quartzy cavity Shape size is adapted, and the collection chinaware is installed in the quartzy cavity bracket, and the quartz cavity bracket is installed on described In quartzy cavity, and then the collection chinaware is fixedly mounted on the quartzy quarter bend (2).

4. a kind of ICP plasma source based on collection chinaware as described in claim 1 forms device, it is characterised in that: the stone English quarter bend (2) further includes annular quartz plate；The quartz cavity bracket is uniformly fixed on annular quartz plate using fastening screw, And then it is fixedly connected with the quartzy quarter bend (2).

5. a kind of ICP plasma source based on collection chinaware as described in claim 1 forms device, it is characterised in that: the collection Chinaware is penetrated through in cylindrical body and along axis direction, is provided with 10 ° of insulation empty slot among it；It is described collection chinaware shape size with The quartz cavity bracket is adapted；The material for integrating chinaware is red copper or other high conductivity material.

6. a kind of ICP plasma source forming method based on collection chinaware is applied to as described in claim 1 a kind of based on collection magnetic The ICP plasma source of device forms device, it is characterised in that: specific step is as follows: Xiang Suoshu radio-frequency induction coil (1) is passed through high frequency Electric current；Collection chinaware in quartz cavity at the radio-frequency induction coil (1) inner hole generates electromagnetic induction, forms high-frequency electrical ；Collect the vortex that chinaware hinders high-frequency electric field to generate, magnetic field is constantly reinforced at center, and magnetic field is constrained on the quartzy quarter bend (2) near axis；Electronics and ion are acted on by high energy magnetic field, cadion-acceleration in generation；Gas generates cyclic structure inductive loop, Ultimately form ICP ion source.

Technical field

The invention belongs to ICP plasma atomic-emission field more particularly to a kind of ICP plasma sources based on collection chinaware Form device and method.

Background technique

Atomic Emission Spectral Analysis method (AES) is a kind of very important analysis method in optical analysis, is tried by detection The characteristic spectrum that atom and ion in sample are emitted due to light source activation under certain condition studies the chemistry of sample material Composition and component content.

Since ICP light source has the superior functions such as excitation energy is high, torch flame is stablized, ICP has become spectrum point at present One of most common excitation light source in analysis.Traditional ICP ion source be using high-frequency inductor coupling method plasma into Row electric discharge, quartz ampoule main body are made of three concentric quartz tubes, respectively to be passed through auxiliary gas, coldization gas and atomization gas.Gas is close Outlet port adds ring current to light a fire, and outlet port adds RF coil and carries out plasma acceleration, realizes the ionization of bulk gas. To guarantee enough ventilatory capacities, the radius of tube body is generally in 9mm or more.RF coil is located on the outside of tube body, away from quartz ampoule outer tube wall About 1mm, maximum field are located at the shaft core position of magnet, i.e., are the most sufficient positions of gas ionization along magnet axial direction, should The aperture of magnetic field value and magnet is closely related.But in practical engineering applications, it is the service life for guaranteeing RF coil, maximum can be led to Alternating current is fixed, i.e., maximum axle center peak field is fixed.So, the radius of tube body greatly limits axle center peak value magnetic , the effective coverage of gas ionization is much smaller than quartzy tube cavity.

Therefore, in order to improve the performance of ICP light source, design a kind of ICP plasma source based on collection chinaware formed device and Method is necessary.

Summary of the invention

To achieve the goals above, a kind of ICP ion source based on collection chinaware provided by the invention forms device,

A kind of ICP plasma source based on collection chinaware forms device, specifically includes: radio-frequency induction coil, quartzy quarter bend and Collect magnetic device；The quartz quarter bend is cylinder, and the radio-frequency induction coil is set to the upper end of the quartzy quarter bend, and along Side surrounding setting；The corresponding position equipped with the radio-frequency induction coil of the quartz quarter bend is equipped with circular quartz cavity, institute The shape size and the collection magnetic device for stating quartzy cavity are adapted, and the collection magnetic device is set in the quartzy cavity.

Further, the quartzy quarter bend is equipped with inlet channel, and the inlet channel has three layers, is respectively used to be passed through cold But gas, auxiliary gas and atomization gas+sample aerosol.

Further, the collection magnetic device includes collection chinaware and quartzy cavity bracket；The shape of the quartz cavity bracket The shape size of size and the quartzy cavity is adapted, and the collection chinaware is installed in the quartzy cavity bracket, the stone English cavity bracket is installed in the quartzy cavity, and then the collection chinaware is fixedly mounted on the quartzy quarter bend.

Further, the quartzy quarter bend further includes annular quartz plate；The quartz cavity bracket is equal using fastening screw It is even to be fixed on annular quartz plate, and then be fixedly connected with the quartzy quarter bend.

Further, the collection chinaware is penetrated through in cylindrical body and along axis direction, and it is empty to be provided with 10 ° of insulation among it Slot；The shape size of the collection chinaware and the quartzy cavity bracket are adapted；The material for integrating chinaware as red copper or other High conductivity material.

A kind of ICP plasma source forming method based on collection chinaware, applied to a kind of ICP plasma source based on collection chinaware Form device, the specific steps are as follows: Xiang Suoshu radio-frequency induction coil is passed through high-frequency current；Positioned at the radio-frequency induction coil inner hole The collection chinaware located in quartzy cavity generates electromagnetic induction, forms high-frequency electric field；Collect the vortex that chinaware hinders high-frequency electric field to generate, magnetic Field is constantly reinforced at center, and magnetic field is constrained on the quartzy quarter bend near axis；Electronics and ion are made by high energy magnetic field With cadion-acceleration in generation；Gas generates cyclic structure inductive loop, ultimately forms ICP ion source.

The beneficial effects of the present invention are: magnetic field utilization rate and magnetic field strength are improved in the case where reducing installation cost, Reduce system consumption power.

Detailed description of the invention

Below in conjunction with attached drawing and example, the invention will be further described, in attached drawing:

Fig. 1 is a kind of structural schematic diagram of the ICP plasma source formation device based on collection chinaware in the embodiment of the present invention；

Fig. 2 is a kind of ICP plasma source formation basic theory schematic diagram based on collection chinaware in the embodiment of the present invention；

Fig. 3 is the detailed maps for collecting chinaware in the embodiment of the present invention.

Specific embodiment

For a clearer understanding of the technical characteristics, objects and effects of the present invention, now control attached drawing is described in detail A specific embodiment of the invention.

Referring to FIG. 1, Fig. 1 is a kind of knot of the ICP plasma source formation device based on collection chinaware in the embodiment of the present invention Structure schematic diagram；A kind of ICP plasma source formation device based on collection chinaware, specifically includes: radio-frequency induction coil 1, quartzy quarter bend 2 Sum aggregate magnetic device 3；The quartz quarter bend 2 is cylinder, and the radio-frequency induction coil 1 is set to the upper end of the quartzy quarter bend 2, And it is arranged along side surrounding；The corresponding position equipped with the radio-frequency induction coil 1 of the quartz quarter bend 2 is equipped with circular quartz Cavity, the shape size and the collection magnetic device 3 of the quartz cavity are adapted, and the collection magnetic device 3 is set to the quartz In cavity.

The quartz quarter bend 2 is equipped with inlet channel, and the inlet channel has three layers, is respectively used to be passed through cooling air, auxiliary Help gas and atomization gas+sample aerosol.

The collection magnetic device 3 includes collection chinaware and quartzy cavity bracket；The shape size of the quartz cavity bracket and institute The shape size for stating quartzy cavity is adapted, and the collection chinaware is installed in the quartzy cavity bracket, the quartz cavity support Slot is installed in the quartzy cavity, and then the collection chinaware is fixedly mounted on the quartzy quarter bend 2.

The quartz quarter bend 2 further includes annular quartz plate；The quartz cavity bracket is uniformly fixed on using fastening screw On annular quartz plate, and then it is fixedly connected with the quartzy quarter bend 2.

Referring to FIG. 3, Fig. 3 is the detailed maps for collecting chinaware in the embodiment of the present invention；The collection chinaware in cylindrical body and It is penetrated through along axis direction, is provided with about 10 ° of insulation empty slot among it；The shape size of the collection chinaware and the quartzy cavity Bracket is adapted；The material for integrating chinaware is red copper or other high conductivity material.

Referring to FIG. 2, Fig. 2 is a kind of ICP plasma source formation basic theory signal based on collection chinaware in the embodiment of the present invention Figure；RF coil is the radio-frequency induction coil 1 in Fig. 2.A kind of ICP plasma source forming method based on collection chinaware, application Device is formed in a kind of ICP plasma source based on collection chinaware as described in right, the specific steps are as follows: Xiang Suoshu high-frequency induction Coil 1 is passed through high-frequency current；Collection chinaware in quartz cavity at 1 inner hole of radio-frequency induction coil generates electromagnetic induction, Form high-frequency electric field；Collect the vortex that chinaware hinders high-frequency electric field to generate, magnetic field is constantly reinforced at center, and magnetic field is constrained on institute State quartzy 2 near axis of quarter bend；Electronics and ion are acted on by high energy magnetic field, cadion-acceleration in generation；Gas generates cyclic structure Inductive loop ultimately forms ICP ion source.

The beneficial effects of the present invention are: magnetic field utilization rate and magnetic field strength are improved in the case where reducing installation cost, Reduce system consumption power.

The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.