More knot photovoltaic apparatus

文档序号:1760482 发布日期:2019-11-29 浏览:22次 中文

阅读说明:本技术 多结光伏设备 (More knot photovoltaic apparatus ) 是由 S·柯娜尔 于 2018-02-20 设计创作,主要内容包括:本发明提供了一种包括第一子电池、第二子电池和布置在第一子电池和第二子电池之间并连接第一子电池和第二子电池的中间区的多结光伏设备,第一子电池包括光活性区,第二子电池包括光活性硅吸收剂,光活性区包括钙钛矿材料层。中间区包括互连层,互连层包括两相材料,其包括嵌在氧化硅基体中的细长(即,细丝状)硅纳米晶体。(The present invention provides a kind of including the first sub- battery, the second sub- battery and the more knot photovoltaic apparatus for being arranged in the middle area between the first sub- battery and the second sub- battery and connecting the first sub- battery and the second sub- battery, first sub- battery includes photoactive region, second sub- battery includes photolytic activity silicon absorbent, and photoactive region includes the perovskite material bed of material.Middle area includes interconnection layer, and interconnection layer includes two phase material comprising elongated (that is, the filament shape) si-nanocrystals in silica matrices.)

1. a kind of more knot photovoltaic apparatus, comprising:

The sub- battery of first photovoltaic comprising photoactive region, the photoactive region include the perovskite material bed of material;

The sub- battery of second photovoltaic comprising photolytic activity silicon absorbent;And

Middle area is arranged between the sub- battery of first photovoltaic and the sub- battery of the second photovoltaic and connects first light Lie prostrate sub- battery and the sub- battery of the second photovoltaic;

Wherein the middle area includes interconnection layer, and the interconnection layer includes two phase material, and the two phase material includes embedded in oxidation Elongated si-nanocrystals in silicon substrate.

2. more knot photovoltaic apparatus as described in claim 1, wherein two phase material is by the silicon nanocrystal in silica matrices Body composition.

3. more knot photovoltaic apparatus as described in any one of claims 1 or 2, wherein the longitudinal axis of the elongated si-nanocrystals It is approximately perpendicular to the apparent surface of the sub- battery of first photovoltaic and the sub- battery of the second photovoltaic.

4. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the diameter of the elongated si-nanocrystals is less than 50nm, preferably equal to or less than 10nm, and still more preferably equal to or less than 5nm.

5. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the silica matrices include armorphous hydrogenation oxygen SiClx.

6. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the silica matrices have from 10 to 50% Oxygen content.

7. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the two phase material include by volume from 10 to 50% si-nanocrystals.

8. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the elongated si-nanocrystals are doped with N-shaped Or p-type doping.

9. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the lateral electrical conductivity of the interconnection layer is more mutual than described Even two or more low orders of magnitude of transverse conduction of layer.

10. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the interconnection layer has from 5nm to 200nm Thickness.

11. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the interconnection layer has 2.70 to 2.90 model The refractive index (n) enclosed.

12. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the middle area include it is one or more in addition Layer.

13. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the middle area further includes transparent conductive oxide Object (TCO) layer.

14. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the transparent conductive oxide (TCO) layer arrangement Between the interconnection layer and the sub- battery of the first photovoltaic.

15. more knot photovoltaic apparatus as described in any one of claim 13 or 14, wherein the transparent conductive oxide (TCO) layer has the thickness from 1nm to 20nm.

16. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the middle area further includes composite layer.

17. much more as claimed in claim 16 tie photovoltaic apparatus, wherein the composite layer is arranged in the interconnection layer and described the Between the sub- battery of two photovoltaics.

18. much more as claimed in claim 16 tie photovoltaic apparatus, wherein the composite layer is arranged in the interconnection layer and described the Between the sub- battery of one photovoltaic.

19. more knot photovoltaic apparatus as described in any one of claim 16 to 18, wherein the composite layer includes that n doping is received Rice crystalline silicon.

20. more knot photovoltaic apparatus as described in any one of claims 1 to 15, wherein the middle area further includes another mutual Even layer, another interconnection layer includes two phase material, and the two phase material includes the si-nanocrystals in silica matrices.

21. more knot photovoltaic apparatus as claimed in claim 20, wherein one in the interconnection layer and another interconnection layer Another including the elongated si-nanocrystals of n doping, and in the interconnection layer and another interconnection layer includes that p adulterates elongated silicon Nanocrystal.

22. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the sub- battery of the first photovoltaic may include p-type area And n-type area and the photoactive region are arranged between the p-type area and the n-type area.

23. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the sub- battery of the first photovoltaic has rule knot Structure.

24. more knot photovoltaic apparatus as claimed in claim 23, when being subordinated to claim 22, wherein first photovoltaic is sub Battery arrangement at make the n-type area adjacent to the described second sub- battery.

25. more knot photovoltaic apparatus as described in any one of claims 1 to 22, wherein the sub- battery of the first photovoltaic has Inverted structure.

26. more knot photovoltaic apparatus as claimed in claim 25, when being subordinated to claim 22, wherein first photovoltaic is sub Battery arrangement at make the p-type area adjacent to the described second sub- battery.

27. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the second sub- battery includes diffusion silicon knot.

28. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the second sub- battery includes silicon heterogenous (SHJ)。

29. more knot photovoltaic apparatus as claimed in any preceding claim, wherein the first sub- battery includes the calcium of general formula (I) Titanium ore material layer:

[A][B][X]3 (I)

Wherein [A] is one or more monovalent cations, and [B] is one or more divalent inorganic cations, and [X] is a kind of Or a variety of halide anions.

30. more knot photovoltaic apparatus as claimed in claim 29, wherein [X] includes being selected from fluorine ion, chloride ion, bromide ion and iodine One or more halide anions of ion.

31. more knot photovoltaic apparatus as described in any one of claim 29 or 30, wherein [X] include selected from fluorine from Son, chloride ion, bromide ion and iodide ion two different halide anions.

32. more knot photovoltaic apparatus as described in any one of claim 29 to 31, wherein [A] includes being selected from first ammonium ion (CH3NH3 +), carbonamidine ion (HC (NH)2)2 +) and second ammonium ion (CH3CH2NH3 +) one or more organic cations.

33. more knot photovoltaic apparatus as described in any one of claim 29 to 32, wherein [A] includes being selected from Cs+、Rb+、Cu+、Pd+、Pt+、Ag+、Au+、Rh+And Ru+One or more inorganic cations.

34. more knot photovoltaic apparatus as described in any one of claim 29 to 33, wherein [B] includes being selected from Pb2+And Sn2+'s At least one divalent inorganic cations, and preferably include Pb2+

35. more knot photovoltaic apparatus as described in any one of claim 29 to 34 lead to wherein the perovskite material has Formula (IA):

AxA’1-xB(XyX’1-y)3 (IA)

Wherein A is selected from first ammonium ion (MA) and carbonamidine ion (FA), and A ' is selected from carbonamidine ion (FA) and caesium cation (Cs+), B choosing From Pb2+And Sn2+, X is iodide ion and X ' is bromide ion, and wherein 0 < x≤1 and 0 < y≤1.

Invention field

The present invention relates to perovskites on monolithic silicon to tie photovoltaic apparatus more.

Background of invention

Over past about 40 years, there is the increase to the needs with safer sustainable energy proxy mineral fuel Realization.New energy supply must also have low environmental impact, be highly effective and be easy-to-use and production gets up to have It is cost-benefit.For this purpose, solar energy is counted as one of most promising technology, however, the equipment of manufacture capture solar energy High cost --- including high material cost --- hinder being widely used for it in history.

Every kind of solid defines the characteristic bands structure of its a wide range of interior electrology characteristic with own.Electronics can be from One energy band transits to another energy band, but each transition needs specific least energy, and the quantity of required energy is not for Same material will be different.Energy needed for electronics obtains transition by absorbing phonon (heat) or photon (light).Term " is prohibited Bandwidth " refers to the energy difference range in the solid that no electronic state may be present, and generally mean that valence band top and lead Energy difference between the bottom of band (as unit of electron-volt).In photovoltaic apparatus such as solar energy under normal sunlight conditions The efficiency of material used in battery is the function of the forbidden bandwidth of the material.If forbidden bandwidth is too high, most of daylight Photon cannot be absorbed;If it is too low, most of photon has more necessary to the excitation electron institute of forbidden bandwidth than crossing Energy much, and its complementary energy will be wasted.The Xiao Kelikuiyise limit refers to the electricity that every photon of incident light can be extracted The theoretical maximum number of energy, and about 1.34eV.The focus of many nearest work about photovoltaic apparatus is to seek to have As close possible to the material of the forbidden bandwidth of this maximum value.

The photovoltaic material for having attracted a kind of classification of sizable interest is perovskite.Such material forms ABX3 Crystal structure is found to show advantageous forbidden bandwidth, high absorption coefficient and long diffusion length, so that such compound is made It is ideal for the absorbent in photovoltaic apparatus.The earlier example of perovskite material in photovoltaic application used by Kojima, A et al. (2009.Organometal halide perovskites as visible-light sensitizers for photovoltaic cells.Journal of the American Chemical Society,131(17), Pp.6050-1) report, it is used as wherein mixing organic-inorganic metal hal ide perovskite based on the photoelectrochemical of liquid electrolyte Learn the sensitizer in battery.Kojima et al. reports the highest solar energy conversion efficiency (or energy conversion efficiency, PCE) of acquisition Be 3.8%, although in this system perovskite absorbent quickly decay and battery after only 10 minutes above and below performance Drop.

Then, Lee, M.M. et al. (2012.Efficient hybrid solar cells based on meso- superstructured organometal halide perovskites.Science(New York,N.Y.),338 (6107), pp.643-7) " meso-superstructured solar cell " is reported, wherein liquid electrolyte is by solid-state Hole conductor (or hole mobile material, HTM), spiro-MeOTAD are replaced.Lee et al. reports transfer efficiency achieved It dramatically increases, simultaneously because avoiding using liquid solvent, also realizes and greatly improve stability test.In described example In son, CH3NH3PbI3Perovskite nanoparticle undertakes the role of the sensitizer in photovoltaic cell, injects electrons into Jie and sees (mesoscopic)TiO2In bracket and inject holes into solid-state HTM.TiO2Selective contact is all served as with HTM, by calcium titanium The electric charge carrier that the photoexcitation of mine nanoparticle generates is extracted by the contact.

Another work described in WO2013/171517 discloses mixed anion perovskite rather than single anion calcium How titanium ore leads to more stable and highly effective photovoltaic apparatus as the use of sensitizer/absorbent in photovoltaic apparatus.It is special Be not that this document discloses the excellent stability of mixed anion perovskite to be protruded by following discovery: equipment exists Insignificant color bleaching is shown during equipment Manufacture Process, while also displaying is more than 10% full solar energy conversion efficiency. In contrast, equivalent single anion perovskite is relatively unstable, when in ambient environmental conditions by single halide calcium titanium When mine manufactures film, generation is bleached quickly.

Recently, WO2014/045021 is described including being arranged in N-shaped (electron-transport) and p-type (hole transport) layer Between photovoltaic perovskite absorbent film planar heterojunction (PHJ) photovoltaic apparatus.It was unexpectedly found that with mesoporous multiple Fit needs are on the contrary, can be good to obtain by using densification (that is, without effectively/open porosity) film of photovoltaic perovskite Good device efficiency, it was demonstrated that perovskite absorbent can work in simplified equipment framework under high efficiency.

Recently, some researchs in the application of the perovskite in photovoltaic apparatus focus on these materials by by conventional base Series connection/more knots arrangement is combined into together with the battery based on perovskite in the solar battery of silicon to promote the solar energy based on silicon The potentiality of the performance of battery.In this aspect of the invention, mostly knot photovoltaic apparatus includes multiple individually sub- batteries (that is, each having The photoactive region of themselves), more solar spectrums are converted into electric energy on top of each other and together by " stacking ", To increase the gross efficiency of equipment.In doing so, each photoactive region of every sub- battery is by selecting, so that light The forbidden bandwidth of active region ensures that it will effectively absorb photon from the particular segment of solar spectrum.This has better than conventional unijunction light Lie prostrate two important advantages of equipment.Firstly, the combination of multiple sub- battery/photoactive regions with different forbidden bandwidths ensures more The incident photon of wide scope can be absorbed more by tying equipment, and secondly, every sub- battery/photoactive region in the dependent part from spectrum Photon in point will be more effective when extracting energy.In particular, the minimum forbidden bandwidth of mostly knot photovoltaic apparatus will be less than generally The forbidden bandwidth of unijunction equipment so that mostly knot equipment will absorptance unijunction equipment absorb photon have less energy light Son.In addition, for that will be tied those of equipment and the absorption of unijunction equipment photon, equipment of tying will more effectively absorb those light more more Son, because having the forbidden bandwidth closer to photon energy to reduce heat loss.

In mostly knot equipment, the sub- battery/photoactive region in top in stacked has highest forbidden bandwidth, lower son electricity Pond/photoactive region forbidden bandwidth reduces towards the bottom of equipment.The extraction of this arrangement energy maximized photon energy, because of top The sub- battery in portion/photoactive region absorbs the highest photon of energy, while the transmission for allowing to have the lower photon of energy.It is each subsequent Sub- battery/photoactive region then extract energy from the photon of the forbidden bandwidth closest to it, thus minimum thermal losses.Bottom Then sub- battery/photoactive region absorbs all remaining photons with the energy of the forbidden bandwidth higher than it.When the more knots of design When battery, select its photoactive region that there is the sub- battery of correct forbidden bandwidth to optimize the absorption to solar spectrum therefore to be Important.In this aspect of the invention, for including two sub- battery/photoactive regions --- the sub- battery/photoactive region in top and bottom Sub- battery/photoactive region --- tandem photovoltaic equipment, it has been suggested that, the sub- battery/photoactive region in bottom should ideally have about The forbidden bandwidth of 1.1eV, and the sub- battery/photoactive region in top should ideally with about 1.7eV forbidden bandwidth (Coutts, T.J.,Emery,K.a.&Scott Ward,J.,2002.Modeled performance of polycrystalline thin-film tandem solar cells.Progress in Photovoltaics:Research and Applications,10(3),pp.195–203)。

Accordingly, there exist to development for organic-inorganic perovskite solar-electricity of mixing used in tandem photovoltaic equipment The interest in pond, it is assumed that can be formed by changing the halide of organic metal halide perovskite by the taboo of these perovskite materials Bandwidth is adjusted to from about 1.5eV more than 2eV (Noh, J.H. et al., 2013.Chemical Management for Colourful,Efficient,and Stable Inorganic-Organic Hybrid Nanostructured Solar Cells.Nano letters,2,pp.28–31)。

In this aspect of the invention, Schneider, B.W. et al. (Schneider, B.W. et al., 2014.Pyramidal surface textures for light trapping and antireflection in perovskite-on- Silicon tandem solar cells.Optics Express, 22 (S6), p.A1422) it reports about perovskite on silicon The modeling of series-connected cell, wherein the structure that there are the battery modeled 4 terminals mechanically to stack.P. et al. (P. et al., 2015.Organic-inorganic halide perovskite/crystalline silicon four-terminal tandem solar cells.Physical chemistry chemical physics:PCCP,17, P.1619 it) reports about the methyl ammonium lead iodide by being mechanically stacked on the sub- battery in crystal silicon heterojunction bottom (CH3NH3PbI3) reality of four terminal series-shunt solar batteries of sub- battery composition at the top of (that is, organic metal halide perovskite) It is existing.Similarly, Bailie, C. et al. (Bailie, C. et al., 2015.Semi-transparent perovskite solar Cells for tandems with silicon and CIGS.Energy Environ.Sci., pp.1-28) report pass In by the methyl ammonium lead iodide (CH in copper indium gallium selenide (CIGS) or the sub- battery of low quality polysilicon bottom3NH3PbI3) top The series-connected solar cells of battery composition mechanically stacked.Filipic, M. et al. (Filipic, M. et al., 2015.CHsNHsPbU perovskite/silicon tandem solar cells:characterization based Optical simulations.Optics Express, 23 (7), pp.480-484) it reports about by methyl ammonium lead iodide (CH3NH3PbI3) the sub- battery in top and the sub- battery composition in crystalline silicon bottom (four terminals) that mechanically stacks and monolithically collect At (two terminals) series devices simulation.Mailoa, J.P. et al. (Mailoa, J.P. et al., 2015.A2-terminal perovskite/silicon multi-junction solar cell enabled by a silicon tunnel Junction.Applied Physics Letters, 106 (12), p.121105) then report about by methyl ammonium iodate Lead (CH3NH3PbI3) the sub- battery in top and the sub- battery composition in crystalline silicon bottom monolithic series-connected solar cells manufacture.

In the more knot photovoltaic apparatus mechanically stacked, each sub- cell stacks are provided on top of each other and each The independent electrical contact of themselves, so that each sub- battery is connected in parallel and does not need currents match.This is more with single-chip integration Photovoltaic apparatus is tied on the contrary, wherein each sub- battery is connected in series between single pair of terminals in electricity meaning, this causes to multiple The needs for closing layer or tunnel knot and the currents match between adjacent subcell.Although the more knot photovoltaic apparatus mechanically stacked are not Need the currents match between sub- battery, the additional size and cost of additional contact and substrate and lower actual efficiency pole Limit makes the structure mechanically stacked become more unfavorable than the structure monolithically integrated.

Merge currently, common metal halide perovskite/silicon series-connected solar cells have on the top of the sub- battery in silicon bottom Transparent conductive oxide (TCO) layer in portion, to the low-resistance tunnel being formed between silicon battery and the sub- battery of perovskite Road composite contact is necessary.As an example, Fig. 1, which is schematically shown, is based on including top based on the sub- battery of perovskite, bottom The sub- battery of silicon and the integrated more knot photovoltaic apparatus of the Conventional monolithic of TCO interconnection layer, TCO interconnection layer includes tin indium oxide (ITO).Though This right configuration is advantageous on electronics, but it introduces two problems.

Firstly, high lateral electrical conductivity (specific conductivity > 2 × 10 of ITO layer2S/cm) make the electricity being present in absorber layer Gesture shunt paths become very harmful to complete photovoltaic apparatus, because they can be with the major part of short-circuit device.Fig. 2 shows tools There is the dark of two representative perovskite/silicon series-connected cells of thin (less conductive) ITO layer of 50nm (good conductive) and 10nm With light current-voltage (IV) characteristic curve.The two batteries all texture c-Si chip with standard pyramid to manufacture, and meet with By lower open-circuit voltage and fill factor than expected.Both of which is probably drawn by the shunt paths for passing through perovskite absorbent It rises.As mentioned above, if they are excellently joined to the rest part of equipment, these are particularly detrimental.This is explained Greatest differences between the IV curve of two kinds of ITO thickness, because thinner ITO layer has than thicker ITO layer obviously more High film resistor.

The Second Problem as caused by ITO layer is, it due to refractive index the unfavorable order of magnitude and form high reflection interface, this It is schematically shown in Fig. 3.Although situation is usually that other functional layer is present between perovskite and silicon absorber layer and TCO, But these are not shown in FIG. 3, because due to their low optical thickness, their influences to light propagation are not significant.

The present invention summarizes

In order to reduce the adverse effect of local shunt paths, inventor developed include be arranged in the sub- battery of perovskite and Perovskite ties photovoltaic apparatus more on the monolithic silicon of interconnection layer between silicon battery, with low-down lateral conductivity rate (lateral conductance), but there is the sufficiently high horizontal conductivity (transversal to allow Lossless transport conductance).In addition, can be changed by the forming for interconnection layer that current inventor develops, to adjust refractive index, so as to Reduce reflection loss, while maintaining enough transverse conductions.

Particularly, current inventor proposes that using includes the elongated filament in amorphous hydro-oxidation silicon substrate Two phase material (referred to herein as nc-SiOx:H) layer of shape si-nanocrystals replaces conventional tco layer.Such two phase material can Cause the formation condition of elongated si-nanocrystals by plasma enhanced chemical vapor using the growth period in nc-SiOx:H film (PECVD) is deposited to manufacture, wherein the longitudinal axis of elongated si-nanocrystals is approximately perpendicular to substrate (that is, by being laterally oriented in nc- In SiOx:H film).The lateral electrical conductivity of two phase material layer depending on Chemical Measurement and nanostructure therefore can be than transverse direction Conductivity it is low it is one or more, preferably two or more, further preferably three or more, it is most preferably several The order of magnitude.Therefore, because high transverse conduction, can be achieved low resistance tunnel recombination contact using such layer, at the same downside to The adverse effect of conductivity reduction shunt paths.In addition, the two-phase property of material allows by changing a-SiOx in a wide range: The score and composition of H phase adjusts the effective refractive index of material, while maintaining sufficiently high lateral conductivity, is considered by mixing Miscellaneous nanocrystal mutually provides.

Therefore, according in a first aspect, provide including the first sub- battery, the second sub- battery and be arranged in the first sub- battery and Between second sub- battery and connect the first sub- battery and the second sub- battery middle area more knot photovoltaic apparatus, the first sub- battery pack Photoactive region is included, the second sub- battery includes photolytic activity silicon absorbent, and photoactive region includes the perovskite material bed of material.Middle area includes mutual Even layer, interconnection layer includes two phase material comprising elongated (that is, the filament shape) si-nanocrystals in silica matrices.

Preferably, the longitudinal axis of elongated si-nanocrystals is approximately perpendicular to the sub- battery of the first photovoltaic and the sub- battery of the second photovoltaic Apparent surface.

Silica matrices preferably include amorphous hydrogenated silicon oxide.Silica matrices can have the oxygen from 10 to 50% to contain Amount.

The diameter of elongated si-nanocrystals is smaller than 50nm, preferably equal to or less than 10nm, and more preferably equal to Or it is less than 5nm.Two phase material may include by volume from 10 to 50% si-nanocrystals.Elongated si-nanocrystals are preferably doped There are N-shaped or p-type doping.

The lateral electrical conductivity of interconnection layer can several orders of magnitude lower than the transverse conduction of interconnection layer.Interconnection layer preferably has Have from 5nm to 200nm, preferably from 70nm to 90nm and the thickness of more preferably about 80nm.Interconnection layer has 2.70 to arrive 2.90 range, preferably 2.75 to 2.85 range, the refractive index (n) of further preferably 2.79 to 2.81 range, with And it is particularly preferred that it has 2.8 refractive index.

Preferably, two phase material is made of the si-nanocrystals in silica matrices.

Middle area may include one or more other layers.

Middle area may also include transparent conductive oxide (TCO) layer.Transparent conductive oxide (TCO) layer may be arranged at mutually Even between layer and the sub- battery of the first photovoltaic.Transparent conductive oxide (TCO) layer preferably has from 1nm to 20nm, preferably Thickness from 5nm to 20nm and preferably from 10nm to 20nm.

Middle area may also include composite layer.Composite layer may be arranged between interconnection layer and the sub- battery of the second photovoltaic.It is selective Ground, composite layer may be arranged between interconnection layer and the sub- battery of the first photovoltaic.Preferably, composite layer includes n dopen Nano crystal silicon.

Middle area may also include another interconnection layer comprising two phase material, two phase material include in silica matrices Si-nanocrystals.Preferably, one in interconnection layer and another interconnection layer includes that n adulterates elongated si-nanocrystals, and interconnects Another in layer and another interconnection layer includes that p adulterates elongated si-nanocrystals.

First sub- battery may include p-type area and n-type area, and photoactive region is arranged between p-type area and n-type area.

The sub- battery of first photovoltaic can have regular texture.The sub- battery of first photovoltaic be then arranged so that n-type area adjacent to Second sub- battery.Then photovoltaic apparatus is preferably configured, illuminated with the p-type area that will pass through the first sub- battery.Alternatively, The sub- battery of first photovoltaic can have inverted structure.The sub- battery of first photovoltaic is then arranged to so that p-type area is adjacent to the second son electricity Pond.Then photovoltaic apparatus is preferably configured, illuminated with the n-type area that will pass through the first sub- battery.

Second sub- battery may include diffusion silicon knot.Second sub- battery may include silicon heterogenous (SHJ).

First sub- battery preferably includes the perovskite material bed of material of logical formula (I):

[A][B][X]3 (I)

Wherein [A] is one or more monovalent cations, and [B] is one or more divalent inorganic cations, and [X] is One or more halide anions.

[X] may include selected from fluorine ion, chloride ion, bromide ion and iodide ion and be preferably chosen from chloride ion, bromide ion and Iodide ion and the one or more halide anions for being more preferably selected from bromide ion and iodide ion.Preferably, [X] includes choosing From fluorine ion, chloride ion, bromide ion and iodide ion and it is preferably chosen from the two different of chloride ion, bromide ion and iodide ion Halide anions and more preferably include bromide ion and iodide ion halide anions.

[A] may include selected from first ammonium ion (CH3NH3 +), carbonamidine ion (HC (NH)2)2 +) and second ammonium ion (CH3CH2NH3 +) One or more organic cations, and preferably include selected from first ammonium ion (CH3NH3 +) and carbonamidine ion (HC (NH)2)2 +) A kind of organic cation.Furthermore or alternatively, [A] may include selected from Cs+、Rb+、Cu+、Pd+、Pt+、Ag+、Au+、Rh+And Ru+ One or more inorganic cations.

[B] may include at least one selected from Pb2+And Sn2+Divalent inorganic cations, and preferably include Pb2+

Preferably, perovskite has general formula (IA):

AxA’1-xB(XyX’1-y)3 (IA)

Wherein A is selected from first ammonium ion (MA) and carbonamidine ion (FA), and A ' is selected from carbonamidine ion (FA) and caesium cation (Cs+), B is selected from Pb2+And Sn2+, X is iodide ion and X ' is bromide ion, and wherein 0 < x≤1 and 0 < y≤1.

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