阅读说明：本技术 一种球面电极微半球谐振陀螺仪及其制备方法 (A kind of micro- hemispherical resonant gyro of radius tip electrode and preparation method thereof ) 是由 王新龙 姜楠 王得收 于 2019-08-27 设计创作，主要内容包括：本发明公开一种球面电极微半球谐振陀螺仪,包括谐振器与盖帽,谐振器设有半球谐振子与球面电极,球面电极之间为电极刻蚀槽；所述谐振器与盖帽分别采用P型硅与N型硅,盖帽底部边缘由上至下依次层叠有第一P型掺杂扩散区、N型掺杂扩散区与第二P型掺杂扩散区,形成P-N-P-N结构层；P-N-P-N结构层两侧分别刻蚀有竖直的防反溅槽,形成一组PN结；盖帽与谐振器硅硅键合,且防反溅槽与谐振器的电极刻蚀槽一一对应；制备时先制备谐振器,再制备带P-N-P-N结构层的盖帽,将盖帽与谐振器硅硅键合,最后腐蚀牺牲层释放谐振子,即完成制备；利用硅硅键合工艺,确保键合后的芯片在VHF释放后不被腐蚀；通过在盖帽上制作PN结,利用反向PN结实现球面电极之间的绝缘。(The present invention discloses a kind of micro- hemispherical resonant gyro of radius tip electrode, including resonator and nut cap, and it is electrode etch slot between radius tip electrode that resonator, which is equipped with hemispherical resonator and radius tip electrode,；P-type silicon and N-type silicon is respectively adopted in the resonator and nut cap, and nut cap bottom margin is from top to bottom sequentially laminated with the first p-type doped diffusion region, n-type doping diffusion region and the second p-type doped diffusion region, forms P-N-P-N structure sheaf；P-N-P-N structure sheaf two sides are etched with vertical anti-backwash slot respectively, form one group of PN junction；Nut cap and resonator Si-Si bonding, and the electrode etch slot of anti-backwash slot and resonator corresponds；Resonator is first prepared when preparation, then prepares the nut cap with P-N-P-N structure sheaf, and by nut cap and resonator Si-Si bonding, final etching sacrificial layer discharges harmonic oscillator, that is, completes preparation；Utilize Si-Si bonding process, it is ensured that the chip after bonding is not corroded after VHF release；By making PN junction in nut cap, the insulation between radius tip electrode is realized using reversed PN junction.)

1. a kind of micro- hemispherical resonant gyro of radius tip electrode, including resonator and nut cap, resonator is equipped with hemispherical resonator and ball Face electrode is electrode etch slot between radius tip electrode, which is characterized in that P-type silicon and N-type is respectively adopted in the resonator and nut cap Silicon, nut cap bottom margin are from top to bottom sequentially laminated with the first p-type doped diffusion region, n-type doping diffusion region and the second p-type and adulterate Diffusion region forms P-N-P-N structure sheaf；P-N-P-N structure sheaf two sides are etched with vertical anti-backwash slot respectively, form one group of PN Knot；Nut cap and resonator Si-Si bonding, and the electrode etch slot of anti-backwash slot and resonator corresponds.

2. a kind of preparation method of the micro- hemispherical resonant gyro of radius tip electrode, which comprises the following steps:

S1, P-type silicon is taken, using thermal oxidation method in P-type silicon surface growing silicon oxide film；

S2, using LPCVD technique in silicon oxide film surface grown silicon nitride film；

S3, using photoetching and etching process, half spherical cavity is prepared in P-type silicon；

S4, anchor point is made in the bottom of half spherical cavity；

S5, in the intracavitary production harmonic oscillator of hemisphere and sacrificial layer；

S6, it takes N-type silicon as nut cap matrix, is from top to bottom implanted sequentially and diffuses to form the doping of the first p-type in N-type silicon bottom and expand Dissipate layer, n-type doping diffusion layer and the second p-type dopant diffusion layer；

S7, it etches the movement chamber moved for harmonic oscillator upwards by the second p-type dopant diffusion layer, forms the doping diffusion of the first p-type Area, n-type doping diffusion region and the second p-type doped diffusion region constitute P-N-P-N structure sheaf；

S8, anti-backwash slot is etched respectively in P-N-P-N structure sheaf two sides, form one group of PN junction, complete the preparation of nut cap；

The P-type silicon that the nut cap and step S5 that S9, step S8 are completed have prepared harmonic oscillator carries out Si-Si bonding；

S10, go out electrode etch slot from P-type silicon back-etching, electrode etch slot and anti-backwash slot correspond, and form spherical surface electricity Pole；

S11, corrosion sacrificial layer, discharge harmonic oscillator, obtain the micro- hemispherical resonant gyro of radius tip electrode.

Technical field

The present invention relates to gyroscope technology field, the micro- hemispherical resonant gyro of specifically a kind of radius tip electrode and its preparation side Method.

Background technique

Hemispherical reso nance gyroscope is a kind of solid-state gyro based on Coriolis effect detection, and is based on Ge Shi detection effect essence Highest gyro is spent, other mechanical gyros is compared to since there is no movable member, there is precision height, stability height, make With the service life it is long the advantages that, be always the hot spot of gyro research field.The research of current half spherical top is concentrated mainly on traditional machine The gyro of tool processing, harmonic oscillator quartzy process-cycle length, at high cost limit its range used at low efficiency.

With the continuous development of MEMS technology, people are increasingly turned to the research of micro- hemispherical resonant gyro, using polysilicon, The materials such as diamond, silicon carbide make hemispherical resonator, not only have the advantages that the high-precision of half spherical top, also have both cost The advantages of low, impact resistance, mass production.The wherein hemispherical reso nance gyroscope of radius tip electrode structure, the big, power consumption with direct capacitance The advantages that low, electrode and high harmonic oscillator assembly precision,

By to existing patent retrieval, Chinese patent " hemispherical resonator decline mechanical gyroscope and its processing technology " (patent No. ZL201210231285.0), using glass nut cap, radius tip electrode is fixed on glass nut cap with the mode of anode linkage On, on the one hand this structure after electrode structure etching is worn, will continue to etching glass, since plasma is gathered on glass, Backwash effect can be generated, radius tip electrode and harmonic oscillator are damaged；On the other hand in VHF(gaseous hydrogen fluoride) release resonance minor structure mistake Cheng Zhong, glass nut cap can be corroded by VHF, be easy to appear that electrode falls off from nut cap, nut cap is corroded between serious and electrode The problems such as now leaking electricity.

Summary of the invention

The purpose of the present invention is to provide micro- hemispherical resonant gyro of a kind of radius tip electrode and preparation method thereof, the gyroscopes During can be avoided VHF release hemispherical resonator, glass nut cap corrodes the case where falling off by VHF, while avoiding electrode Between electric leakage and harmonic oscillator problem easy to damage.

The technical solution adopted by the present invention to solve the technical problems is:

A kind of micro- hemispherical resonant gyro of radius tip electrode, including resonator and nut cap, resonator are equipped with hemispherical resonator and spherical surface Electrode is electrode etch slot between radius tip electrode；P-type silicon and N-type silicon, nut cap bottom sides are respectively adopted in the resonator and nut cap Edge is from top to bottom sequentially laminated with the first p-type doped diffusion region, n-type doping diffusion region and the second p-type doped diffusion region, forms P- N-P-N structure sheaf；P-N-P-N structure sheaf two sides are etched with vertical anti-backwash slot respectively, form one group of PN junction；Nut cap and resonance Device Si-Si bonding, and the electrode etch slot of anti-backwash slot and resonator corresponds.

The present invention also provides a kind of preparation methods of the micro- hemispherical resonant gyro of radius tip electrode, comprising the following steps:

S1, P-type silicon is taken, using thermal oxidation method in P-type silicon surface growing silicon oxide film；

S2, using LPCVD technique in silicon oxide film surface grown silicon nitride film；

S3, using photoetching and etching process, half spherical cavity is prepared in P-type silicon；

S4, anchor point is made in the bottom of half spherical cavity；

S5, in the intracavitary production harmonic oscillator of hemisphere and sacrificial layer；

S6, it takes N-type silicon as nut cap matrix, is from top to bottom implanted sequentially and diffuses to form the doping of the first p-type in N-type silicon bottom and expand Dissipate layer, n-type doping diffusion layer and the second p-type dopant diffusion layer；

S7, it etches the movement chamber moved for harmonic oscillator upwards by the second p-type dopant diffusion layer, forms the doping diffusion of the first p-type Area, n-type doping diffusion region and the second p-type doped diffusion region constitute P-N-P-N structure sheaf；

S8, anti-backwash slot is etched respectively in P-N-P-N structure sheaf two sides, form one group of PN junction, complete the preparation of nut cap；

The P-type silicon that the nut cap and step S5 that S9, step S8 are completed have prepared harmonic oscillator carries out Si-Si bonding；

S10, go out electrode etch slot from P-type silicon back-etching, electrode etch slot and anti-backwash slot correspond, and form spherical surface electricity Pole；

S11, corrosion sacrificial layer, discharge harmonic oscillator, obtain the micro- hemispherical resonant gyro of radius tip electrode.

The invention has the advantages that utilizing Si-Si bonding process, it is ensured that the chip after bonding is not rotten after VHF release Erosion, avoids the occurrence of the problem of radius tip electrode falls off, leaks electricity；By making PN junction in nut cap, spherical surface is realized using reversed PN junction Insulation between electrode.

Detailed description of the invention

Present invention will be further explained below with reference to the attached drawings and examples:

Fig. 1 is structural schematic diagram of the invention；

Fig. 2 is the schematic diagram of preparation method step S1 of the present invention；

Fig. 3 is the schematic diagram of preparation method step S2 of the present invention；

Fig. 4 is the schematic diagram of preparation method step S3 of the present invention；

Fig. 5 is the schematic diagram of preparation method step S4 of the present invention；

Fig. 6 is the schematic diagram of preparation method step S5 of the present invention；

Fig. 7 is the schematic diagram of preparation method step S6 of the present invention；

Fig. 8 is the schematic diagram of preparation method step S7 of the present invention；

Fig. 9 is the schematic diagram of preparation method step S8 of the present invention；

Figure 10 is the schematic diagram of preparation method step S9 of the present invention；

Figure 11 is the schematic diagram of preparation method step S10 of the present invention；

Figure 12 is the schematic diagram of preparation method step S11 of the present invention.

Specific embodiment

As shown in Figure 1, the present invention provides a kind of micro- hemispherical resonant gyro of radius tip electrode, including resonator 1 and nut cap 2, Resonator 1 is equipped with hemispherical resonator 3 and radius tip electrode 4, is electrode etch slot 5 between radius tip electrode 4, the resonator 1 and lid P-type silicon and N-type silicon is respectively adopted in cap 2, and 2 bottom margin of nut cap is from top to bottom sequentially laminated with the first p-type doped diffusion region 6, N-type Doped diffusion region 7 and the second p-type doped diffusion region 8 form P-N-P-N structure sheaf；P-N-P-N structure sheaf two sides are etched with respectively Vertical anti-backwash slot 9 forms one group of PN junction；Nut cap 2 and 1 Si-Si bonding of resonator, and the electrode of anti-backwash slot 9 and resonator Etching groove 5 corresponds.

The present invention also provides a kind of preparation methods of the micro- hemispherical resonant gyro of radius tip electrode, comprising the following steps:

S1, as shown in Fig. 2, P-type silicon 10 is taken, using thermal oxidation method in 10 surface growing silicon oxide film 11 of P-type silicon；

S2, as shown in connection with fig. 3 is thin in 11 surface grown silicon nitride of silicon oxide film using LPCVD (low-pressure vapor phase deposit) technique Film 12；

S3, as shown in connection with fig. 4, using photoetching and etching process, prepares half spherical cavity 14 in P-type silicon；

It can specifically be executed by following sub-step:

S31, photoetching and isotropic etch exposure mask 13 is etched on the silicon nitride film and silicon oxide film of top layer, exposure mask 13 For circle；

S32, P-type silicon is put into HNA and is corroded, HNA can at corrosion window isotropic etch P-type silicon, make a reservation for out when corroding Half spherical cavity, 14 structure after, stop corrosion；

S33, with concentrated phosphoric acid remaining silicon nitride film is removed again；

S34, remaining silicon oxide film is removed with BHF；

S4, as shown in connection with fig. 5 makes anchor point in the bottom of half spherical cavity 14；

It can specifically be executed by following sub-step:

S41, using deep chamber photoetching process, half spherical cavity 14 bottom photoetching and etch the first anchor point 15, the first anchor point 15 is main It is used to adjust the Q value of hemispherical resonator；

S42, in the long silicon oxide layer 16 of P-type silicon surface thermal oxide metaplasia, for making the sacrificial layer of harmonic oscillator release, sacrificial layer Thickness determines the driving between electrode and harmonic oscillator and the size of detection capacitor；Using deep chamber photoetching process, in half spherical cavity Bottom photoetching simultaneously etches the second anchor point 17, and the second anchor point 17 is mainly used for for hemispherical resonator being electrically connected on electrode；

S5, as shown in connection with fig. 6, in the intracavitary production harmonic oscillator of hemisphere and sacrificial layer；

It can specifically be executed by following sub-step:

S51, in 16 surface deposition polysilicon 18 of silicon oxide layer, polysilicon 18 can also be substituted with diamond thin；

S52, the polysilicon of P-type silicon top-most-surface plane is removed using CMP process；

S53, the silicon oxide layer that P-type silicon top-most-surface plane is eroded with VHF, the intracavitary silica of hemisphere and polysilicon are retained Come, forms respectively sacrificial layer 19 and harmonic oscillator 3；

S6, as shown in connection with fig. 7 takes N-type silicon 21 to be used as nut cap matrix, is from top to bottom implanted sequentially and spreads in 21 bottom of N-type silicon Form the first p-type dopant diffusion layer 22, n-type doping diffusion layer 23 and the second p-type dopant diffusion layer 24；

S7, as shown in connection with fig. 8 is etched the movement chamber 25 for harmonic oscillator movement by the second p-type dopant diffusion layer upwards, forms the One p-type doped diffusion region 6, n-type doping diffusion region 7 and the second p-type doped diffusion region 8 constitute P-N-P-N structure sheaf；

S8, as shown in connection with fig. 9 etches anti-backwash slot 9 in P-N-P-N structure sheaf two sides respectively, forms one group of PN junction, complete lid The preparation of cap 2；

The P-type silicon 10 that the nut cap 2 and step S5 that S9, as shown in connection with fig. 10, step S8 are completed have prepared harmonic oscillator carries out Si prediction It closes；

S10, in conjunction with shown in Figure 11, go out electrode etch slot 5 from P-type silicon back-etching, electrode etch slot 5 and anti-backwash slot 9 are one by one It is corresponding, form radius tip electrode 4；

S11, in conjunction with shown in Figure 12, corrode sacrificial layer 19, discharge harmonic oscillator 3, obtain the micro- hemispherical resonant gyro of radius tip electrode.

The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form；Appoint What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations Apply example.Therefore, anything that does not depart from the technical scheme of the invention according to the technical essence of the invention do above embodiments Any simple modification, equivalent replacement, equivalence changes and modification, all of which are still within the scope of protection of the technical scheme of the invention.