阅读说明：本技术 金属层结构的制造方法以及半导体器件及其制造方法 (The manufacturing method and semiconductor devices and its manufacturing method of metal-layer structure ) 是由 马山州 涂琪 陶靖元 于 2019-09-05 设计创作，主要内容包括：本发明提供了一种金属层结构的制造方法以及半导体器件及其制造方法,所述金属层结构的制造方法包括：提供一晶圆；形成金属膜层于所述晶圆上,所述金属膜层的温度高于所述金属膜层的材质的固溶温度；对所述金属膜层进行冷却处理；以及,检测所述金属膜层中的杂质缺陷是否超出规格,若所述金属膜层中的杂质缺陷超出规格,则对所述金属膜层进行去杂质处理,以使得所述金属膜层中的杂质缺陷未超出规格；若所述金属膜层中的杂质缺陷未超出规格,则对所述金属膜层进行刻蚀,以形成所述金属层结构。本发明的技术方案使得金属层结构中的杂质缺陷控制在规格以内,进而避免影响金属层结构的性能。(The present invention provides a kind of manufacturing method of metal-layer structure and semiconductor devices and its manufacturing method, the manufacturing method of the metal-layer structure includes: to provide a wafer；Metallic diaphragm is formed on the wafer, the temperature of the metallic diaphragm is higher than the solid solubility temperature of the material of the metallic diaphragm；Cooling treatment is carried out to the metallic diaphragm；And whether the impurity defect detected in the metallic diaphragm exceeds specification, if the impurity defect in the metallic diaphragm exceeds specification, decontamination processing is carried out to the metallic diaphragm, so that the impurity defect in the metallic diaphragm is without departing from specification；If the impurity defect in the metallic diaphragm performs etching the metallic diaphragm without departing from specification, to form the metal-layer structure.Technical solution of the present invention makes the control of the impurity defect in metal-layer structure within specification, and then avoids influencing the performance of metal-layer structure.)

1. a kind of manufacturing method of metal-layer structure characterized by comprising

One wafer is provided；

Metallic diaphragm is formed on the wafer, the temperature of the metallic diaphragm is higher than the solid solution temperature of the material of the metallic diaphragm Degree；

Cooling treatment is carried out to the metallic diaphragm；And

Detect whether the impurity defect in the metallic diaphragm exceeds specification, if the impurity defect in the metallic diaphragm is beyond rule Lattice then carry out decontamination processing to the metallic diaphragm, so that the impurity defect in the metallic diaphragm is without departing from specification；If Impurity defect in the metallic diaphragm then performs etching the metallic diaphragm without departing from specification, to form metal-layer structure.

2. the manufacturing method of metal-layer structure as described in claim 1, which is characterized in that the metal-layer structure includes metal The pole plate of interconnection structure, the pole plate of resistance or capacitor.

3. the manufacturing method of metal-layer structure as described in claim 1, which is characterized in that the material of the metallic diaphragm includes The alloy of one of aluminium, copper, tungsten, nickel, gold, silver and titanium or at least two compositions.

4. the manufacturing method of metal-layer structure as described in claim 1, which is characterized in that form the metal using sputtering plating Film layer is on the wafer, and the material of the metallic diaphragm includes the alloy of aluminium and copper composition, and the temperature of the metallic diaphragm is not Less than 300 DEG C.

5. the manufacturing method of metal-layer structure as described in claim 1, which is characterized in that if the impurity in the metallic diaphragm The step of defect exceeds specification, then carries out decontamination processing to the metallic diaphragm includes: directly to carry out to the metallic diaphragm Annealing；Alternatively, re-forming the metallic diaphragm in the metallic diaphragm progress on the wafer, and to re-forming Annealing.

6. the manufacturing method of metal-layer structure as claimed in claim 5, which is characterized in that the step of annealing wraps Include: first by the metallic diaphragm not less than the metallic diaphragm material solid solubility temperature at a temperature of maintain certain time, The metallic diaphragm is quickly cooled to room temperature again.

7. the manufacturing method of metal-layer structure as claimed in claim 6, which is characterized in that described that the metallic diaphragm is rapid Being cooled to room temperature includes being cooled down using two stages cooling method.

8. the manufacturing method of the metal-layer structure as described in any one of claims 1 to 7, which is characterized in that form the gold Belong to film layer before on the wafer, is initially formed diffusion barrier layer on the wafer.

9. a kind of manufacturing method of semiconductor devices characterized by comprising using described in any item of the claim 1 to 8 The manufacturing method of metal-layer structure forms metal-layer structure on a wafer.

10. a kind of semiconductor devices characterized by comprising use metal layer knot described in any item of the claim 1 to 8 The manufacturing method of structure is fabricated, and forms metal-layer structure on a wafer.

Technical field

The present invention relates to technical field of manufacturing semiconductors, in particular to the manufacturing method of a kind of metal-layer structure and partly lead Body device and its manufacturing method.

Background technique

In the manufacturing process of wafer, board of aluminizing just in production can be potentially encountered various abnormal and cause to shut down. For the wafer in board chamber of aluminizing, generally all can as early as possible complete complement plated after flow down again, but inevitably, some Wafer in aluminizing can not be completed in a relatively short time complement plated.The study found that working as the wafer in aluminizing in the aluminum-spraying machine of shutdown When stop does not carry out complement plated more than 20min or more yet in platform, it will lead to and produced in the aluminium film structure formed after subsequent etching processes Raw serious impurity residual, i.e., the size and/or quantity of remaining impurity exceed specification, as shown in Figure 1a, the aluminium plated on wafer The impurity defect D1 of a large amount of ultra-specification is generated in membrane structure, and then influences the performance of finally formed aluminium film structure.

Therefore, how the contaminant problem of the ultra-specification generated in the aluminium film structure produced in abnormal board of aluminizing is carried out The problem of improvement, the performance to avoid influence aluminium film structure is current urgent need to resolve.

Summary of the invention

The purpose of the present invention is to provide a kind of manufacturing method of metal-layer structure and semiconductor devices and its manufacturers Method so that the impurity defect in metal-layer structure controls within specification, and then avoids influencing the performance of metal-layer structure.

To achieve the above object, the present invention provides a kind of manufacturing method of metal-layer structure,

One wafer is provided；

Metallic diaphragm is formed on the wafer, the temperature of the metallic diaphragm is higher than consolidating for the material of the metallic diaphragm Solubility temperature；

Cooling treatment is carried out to the metallic diaphragm；And

Detect whether the impurity defect in the metallic diaphragm exceeds specification, if the impurity defect in the metallic diaphragm is super Specification out then carries out decontamination processing to the metallic diaphragm, so that the impurity defect in the metallic diaphragm is without departing from rule Lattice；If the impurity defect in the metallic diaphragm performs etching the metallic diaphragm, without departing from specification to form metal layer Structure.

Optionally, the metal-layer structure includes the pole plate of metal interconnection structure, the pole plate of resistance or capacitor.

Optionally, the material of the metallic diaphragm includes one of aluminium, copper, tungsten, nickel, gold, silver and titanium or at least two The alloy of composition.

Optionally, the metallic diaphragm is formed on the wafer using sputtering plating, the material of the metallic diaphragm includes The temperature of the alloy of aluminium and copper composition, the metallic diaphragm is not less than 300 DEG C.

Optionally, if the impurity defect in the metallic diaphragm exceeds specification, decontamination is carried out to the metallic diaphragm The step of processing includes: directly to make annealing treatment to the metallic diaphragm；Alternatively, re-forming the metallic diaphragm in described On wafer, and the metallic diaphragm re-formed is made annealing treatment.

Optionally, the step of annealing includes: first by the metallic diaphragm not less than the metallic diaphragm Certain time is maintained at a temperature of the solid solubility temperature of material, then the metallic diaphragm is quickly cooled to room temperature.

Optionally, it is described by the metallic diaphragm be quickly cooled to room temperature include carried out using two stages cooling method it is cold But.

Optionally, the metallic diaphragm is formed before on the wafer, is initially formed diffusion barrier layer on the wafer.

The present invention also provides a kind of manufacturing methods of semiconductor devices, comprising: uses the metal provided by the invention The manufacturing method of layer structure forms metal-layer structure on a wafer.

The present invention also provides a kind of semiconductor devices, comprising: using the system of the metal-layer structure provided by the invention The method of making is fabricated, and forms metal-layer structure on a wafer.

Compared with prior art, technical solution of the present invention has the advantages that

1, the manufacturing method of metal-layer structure of the invention, by wafer formation temperature be higher than metallic diaphragm material Solid solubility temperature metallic diaphragm, and to metallic diaphragm carry out cooling treatment, and detect the impurity in the metallic diaphragm lack It falls into and whether exceeds specification, decontamination processing is carried out beyond the metallic diaphragm of specification to impurity defect, so that the metal film Impurity defect in layer controls within specification；Further, the metallic diaphragm to impurity defect in specification is carved Erosion, to form the metal-layer structure, so that the impurity defect in metal-layer structure also controls within specification, avoids to metal The performance of layer structure has an impact.

2, the manufacturing method of semiconductor devices of the invention, due to the system using the metal-layer structure provided by the invention Method is made in forming the metal-layer structure on a wafer, so that the metal-layer structure has uniform structure or surface, into And the performance of the semiconductor devices is improved.

3, semiconductor devices of the invention, due to being manufactured using the manufacturing method of the metal-layer structure provided by the invention It forms, forms metal-layer structure on a wafer, so that the metal-layer structure has uniform structure or surface, so that The performance of the semiconductor devices is improved.

Detailed description of the invention

Fig. 1 a is the distribution schematic diagram of remaining impurity in aluminium film structure；

Fig. 1 b is the scanning electron microscope diagram of remaining impurity in aluminium film structure；

The flow chart of the manufacturing method of the metal-layer structure of Fig. 2 one embodiment of the invention；

Fig. 3 is the distribution schematic diagram of the impurity defect on the metal-layer structure after improving.

Specific embodiment

It has been investigated that the reason of generating impurity residual in aluminium film structure are as follows: in the technical process that sputtering is aluminized, use Aluminium target in containing 0.5% copper, under the action of being splashed to the plasma of target of crystal column surface, the temperature of crystal column surface Degree can be increased to 300 DEG C or more, this temperature is aluminium/copper solid solubility temperature, and the aluminium film structure formed at a temperature of this has good Uniformity；And when stopping aluminizing when the board of aluminizing in production is abnormal, the surface temperature of the wafer in board chamber of aluminizing Degree can be slowly declined to 300 DEG C hereinafter, occurring in the aluminium film structure for causing crystal column surface to plate within the time of 20min or so The Al of a large amount of ultra-specifications is assembled and formed to copper₂Cu impurity, and then lead to the aluminium film knot formed after complement plated and etching technics The Al largely assembled is still had on structure₂Cu impurity residual, as shown in Figure 1 b, the Al of remaining aggregation₂Cu impurity defect D2 is in aluminium film Raised position is presented in structure, so that the surface of aluminium film structure is uneven, and then influences the performance of aluminium film structure.Therefore, this hair The manufacturing method of a kind of bright manufacturing method for proposing metal-layer structure and semiconductor devices, enables in metal-layer structure Impurity defect improved, and then avoid influence metal-layer structure performance.

To keep the purpose of the present invention, advantages and features clearer, below in conjunction with 2~3 pairs of gold proposed by the present invention of attached drawing The manufacturing method and semiconductor devices and its manufacturing method of category layer structure are described in further detail.It should be noted that attached drawing It is all made of very simplified form and uses non-accurate ratio, only to convenient, lucidly the aid illustration present invention is implemented The purpose of example.

One embodiment of the invention provides a kind of manufacturing method of metal-layer structure, referring to Fig.2, Fig. 2 is that the present invention one is implemented The flow chart of the manufacturing method of the metal-layer structure of example, the manufacturing method of the metal-layer structure include:

Step S1 provides a wafer；

Step S2 forms metallic diaphragm on the wafer, and the temperature of the metallic diaphragm is higher than the metallic diaphragm The solid solubility temperature of material；

Step S3 carries out cooling treatment to the metallic diaphragm；

Step S4, detects whether the impurity defect in the metallic diaphragm exceeds specification, if miscellaneous in the metallic diaphragm Matter defect exceeds specification, then decontamination processing is carried out to the metallic diaphragm, so that the impurity defect in the metallic diaphragm Without departing from specification；If the impurity defect in the metallic diaphragm performs etching the metallic diaphragm, without departing from specification with shape At metal-layer structure.

The manufacturing method for introducing metal-layer structure provided in this embodiment in greater detail below:

According to step S1, a wafer is provided.Wherein, the wafer may include substrate and be formed on the substrate Film layer structure.The substrate can be any appropriate ground well known to those skilled in the art, such as can be following mentioned At least one of material arrived: silicon (Si), germanium (Ge), germanium silicon (SiGe), carbon silicon (SiC), carbon germanium silicon (SiGeC), indium arsenide (InAs), GaAs (GaAs), indium phosphide (InP) or other III/V compound semiconductors further include that these semiconductors are constituted Multilayered structure etc., or for silicon (SSOI) is laminated on silicon-on-insulator (SOI), insulator, SiGe (S- is laminated on insulator SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI), or can also be twin polishing silicon wafer (Double Side Polished Wafers, DSP) can also be ceramic bases, quartz or the substrate of glass etc. of aluminium oxide etc.. The film layer structure formed on the wafer is, for example, gate structure or dielectric layer etc., and the gate structure can be polysilicon gate Or metal gates.It should be noted that the present invention is not construed as limiting the structure of wafer, can select to close according to device to be formed Suitable wafer.

According to step S2, metallic diaphragm is formed on the wafer, the temperature of the metallic diaphragm is higher than the metal film The solid solubility temperature of the material of layer.Form the metallic diaphragm may include: vacuum evaporation, sputters plating in the method on the wafer Or ion plating, vacuum evaporation are to heat metal material to be deposited in vacuum cavity, evaporate, and make the atom or atom of evaporation Group condenses on the lower wafer of temperature, to form the metallic diaphragm；Sputtering plating is the work using charged ion in electromagnetic field Enough energy are obtained with lower, solid target (i.e. metal material) surface is bombarded, is sputtered out plasma from target material surface With certain kinetic energy directive crystal column surface, the metallic diaphragm is formed on wafer；Ion plating is under vacuum conditions, to utilize gas Body electric discharge makes gas or is evaporated material part ionization, in gas ion or while be evaporated material particle bombardment effect, Evaporant or its reactant are deposited on wafer, to form the metallic diaphragm.

And during forming the metallic diaphragm using above-mentioned several method, it all can be because of the reaction in reaction process The factors such as the intracorporal heating of chamber or plasma bombardment make the metallic diaphragm and wafer temperature with higher, institute State solid solubility temperature of the higher temperature higher than the material of the metallic diaphragm.The temperature of the metallic diaphragm is higher than the metal film The solid solubility temperature of the material of layer, so that the structure of the metallic diaphragm formed or surface are more uniform, according to the shape of use At the difference of the material for the metallic diaphragm that the method for the metallic diaphragm is different and is formed, the metal film layer surface Temperature also can be different.The material of the metallic diaphragm may include one of metals such as aluminium, copper, tungsten, nickel, gold, silver and titanium or The alloy of at least two compositions.For example, when the material of the metallic diaphragm is the alloy that aluminium and copper form, it can be using sputtering The method of plating forms the metallic diaphragm on the wafer, wherein and the copper in the aluminium target used containing 0.5% is plated in sputtering, When the plasma of aluminium and copper is splashed to the surface of the wafer, the surface temperature liter of the metallic diaphragm and the wafer Height to be greater than 300 DEG C, that is, reach aluminium and copper composition alloy solid solubility temperature so that formed the metallic diaphragm structure or Person surface keeps uniform at this temperature.

In addition, forming the metallic diaphragm before on the wafer, diffusion barrier layer can be initially formed in the wafer On.The diffusion barrier layer can stop the metallic atom in the metallic diaphragm to spread, especially after the metallic diaphragm When the metal-layer structure that etching is formed is metal interconnection structure, electrons and the metallic atom moved along electric field opposite direction is moved Amount exchange causes metallic atom to generate and spreads leading mass transportation by atom, i.e. generation ELECTROMIGRATION PHENOMENON, and ELECTROMIGRATION PHENOMENON Will lead to metal interconnection structure, because of the diffusion of metallic atom movement to form empty (void) or raised (hillock) etc. scarce It falls into, region serious for defect even will appear the problems such as breaking or short-circuit, and therefore, the presence of the diffusion barrier layer is just It is particularly important.The diffusion barrier layer can be single layer or at least two layers, and material may include tantalum, tantalum nitride, nitridation One of titanium, tungsten nitride and nitrogen silicon tantalum or at least two combination, physical vapour deposition (PVD) or chemical vapor deposition can be used Etc. film deposition techniques form the diffusion barrier layer.

According to step S3, cooling treatment is carried out to the metallic diaphragm.According to the description of above-mentioned steps S2, formation it is described The temperature of metallic diaphragm is higher than the solid solubility temperature of the material of the metallic diaphragm, therefore, needs after forming the metallic diaphragm The metallic diaphragm is cooled to room temperature (such as 20 DEG C~30 DEG C), to carry out subsequent process.It can use to cold The metallic diaphragm is cooled fast to room within the time less than 2min by the mode that the cooling gas such as nitrogen are but passed through in chamber Temperature, so that the temperature in the configuration state of the metallic diaphragm after cooling and step S2 is higher than the material of the metallic diaphragm The configuration state of the metallic diaphragm of solid solubility temperature be consistent as much as possible, i.e., will be in step S2 by being quickly cooled down Structure or the state of the uniform metallic diaphragm in surface be fixed up so that the structure of the metallic diaphragm after cooling or Surface is kept uniformly as much as possible, so that the impurity defect in the metallic diaphragm controls within specification as much as possible, The problem of to improve the impurity defect generated in the metallic diaphragm.It is understood that the signified type of cooling is only herein One example of the present embodiment should adjust the cooling gas being passed through and cold in the actual operation process according to the actual situation But the time, so present invention should not be limited with this.

According to step S4, detect whether the impurity defect in the metallic diaphragm exceeds specification, if in the metallic diaphragm Impurity defect exceed specification, then to the metallic diaphragm carry out decontamination processing so that the impurity in the metallic diaphragm Defect is without departing from specification；If the impurity defect in the metallic diaphragm performs etching the metallic diaphragm without departing from specification, To form metal-layer structure.The metal-layer structure may include the pole plate of metal interconnection structure, the pole plate of resistance or capacitor.

Wherein, the impurity defect in the metallic diaphragm may be will lead to there are many factor beyond specification, for example, above-mentioned In step S2, form the metallic diaphragm during on the wafer, deposition machine cancel closedown and cause described in deposition The technique of metallic diaphragm stops, if deposited the wafer of the metallic diaphragm of segment thickness in the deposition chambers of board When stop is more than that certain time (such as more than 20min) does not continue depositing operation and remove metallic diaphragm described in complement plated, the crystalline substance Round surface temperature will be slow decline, that is, the temperature of the metallic diaphragm of the segment thickness formed is from higher than the metal The solid solubility temperature of the material of film layer is slowly declined to room temperature, this will lead to the configuration state of the metallic diaphragm in step S2 It changes during temperature slowly declines, forms the impurity of the second phase, such as when the material of the metallic diaphragm is aluminium When the alloy formed with copper, in step s 2, the temperature not less than 300 DEG C is the solid solubility temperature for the alloy that aluminium and copper form, and Copper aggregation can occur during temperature is slowly declined to room temperature, in the metallic diaphragm and form Al₂Cu impurity defect, this Impurity defect causes the structure of the metallic diaphragm or surface uneven.Alternatively, in above-mentioned steps S3, to the metal film During layer carries out cooling treatment, it is different that the factors such as amount deficiency of the cooling gas such as nitrogen being passed through cause cooling technique to occur Often, so that the configuration state of the metallic diaphragm changes, and then lead to the impurity for occurring the second phase in the metallic diaphragm Defect.And the non-uniform metallic diaphragm of the impurity defect with a large amount of ultra-specifications will affect shape after subsequent etching processes At the metal-layer structure performance, for example, when the metal-layer structure be metal interconnection structure when, in subsequent encapsulation work In skill, the connection reliability between weld pad and lead in the non-uniform metal interconnection structure of structure or surface will receive influence, And then lead to circuit malfunction.

When being detected to the impurity defect in the metallic diaphragm, if the impurity defect in the metallic diaphragm exceeds Specification carries out the metallic diaphragm according to causing the reason of generating the impurity defect of ultra-specification in the metallic diaphragm different The step of decontamination processing, also can be different, and step may include: the depositing operation when the metallic diaphragm in the deposition chamber It has been completed that, and the cooling technique in cooling chamber occurs abnormal and leads to the impurity for generating ultra-specification in the metallic diaphragm When defect, then directly the metallic diaphragm can be made annealing treatment；When deposition machine cancel closedown leads to the metal film The depositing operation of layer is not completed, then can re-form the metallic diaphragm in the wafer (i.e. original deposited gold Belong to film layer) on, and the metallic diaphragm re-formed is made annealing treatment.The step of annealing includes: first will The metallic diaphragm the solid solubility temperature of the material not less than the metallic diaphragm at a temperature of maintain certain time, then will be described Metallic diaphragm is quickly cooled to room temperature.Wherein, the certain time can include but is not limited to 2min~20min (for example, 3min, 10min, 15min etc.)；The metallic diaphragm, which is quickly cooled to room temperature, can include but is not limited to less than 2min's 20 DEG C~30 DEG C (for example, 22 DEG C, 25 DEG C, 28 DEG C etc.) are cooled in time；It can be according to the material of the metallic diaphragm not Together, the suitable certain time and suitable cooling velocity are selected.By the way that the metallic diaphragm is being not less than the metal Certain time is maintained at a temperature of the solid solubility temperature of the material of film layer, so that the knot of the impurity defect generated in the metallic diaphragm Structure state is as much as possible to come back to uniform state, then by the way that the metallic diaphragm is cooled fast to room temperature, so that knot The state of the uniform metallic diaphragm in structure or surface is fixed up so that the structure of the metallic diaphragm after cooling or Surface is kept uniformly as much as possible, so that the impurity defect in the metallic diaphragm is improved, as shown in figure 3, after improving The quantity of impurity defect D3 on metal-layer structure greatly reduces compared to impurity defect D1 shown in Fig. 1 a.In addition, in order to make It obtains the metallic diaphragm and is cooled fast to room temperature, can be cooled down using two stages cooling method, such as in the first stage It is passed through the cooling 1min of a certain amount of nitrogen, nitrogen used in the first stage can be discharged in second stage, be passed through nitrogen again Gas cools down 30s again, and controls cooling velocity by the flow velocity of control nitrogen, pressure and other parameters, to reduce as much as possible The cooling time of impurity defect in the metallic diaphragm, first stage and second stage can also carry out according to cooling effect Adjustment.In addition, if the impurity defect in the metallic diaphragm without departing from specification, alternatively, being handled by decontamination will be described The impurity defect beyond specification in metallic diaphragm controls within specification, then performs etching to the metallic diaphragm, to be formed The metal-layer structure.It may include dry etching or wet etching to the method that the metallic diaphragm performs etching.

In addition, each step in the manufacturing method of above-mentioned metal-layer structure is not limited only to above-mentioned formation sequence, respectively The sequencing adaptability of a step is adjusted.

In conclusion the manufacturing method of metal-layer structure provided by the invention, comprising: provide a wafer；Form metal film For layer on the wafer, the temperature of the metallic diaphragm is higher than the solid solubility temperature of the material of the metallic diaphragm；To the metal Film layer carries out cooling treatment；And whether the impurity defect detected in the metallic diaphragm exceeds specification, if the metallic diaphragm In impurity defect exceed specification, then to the metallic diaphragm carry out decontamination processing so that miscellaneous in the metallic diaphragm Matter defect is without departing from specification；If the impurity defect in the metallic diaphragm carves the metallic diaphragm without departing from specification Erosion, to form the metal-layer structure.The manufacturing method of metal-layer structure provided by the invention makes miscellaneous in metal-layer structure Matter powder injection molding avoids influencing the performance of metal-layer structure within specification.

One embodiment of the invention provides a kind of manufacturing method of semiconductor devices, the manufacturing method packet of the semiconductor devices It includes: using the manufacturing method of the metal-layer structure provided by the invention, forming metal-layer structure on a wafer.The wafer The film layer structure that may include substrate and be formed on the substrate, the film layer structure formed on the wafer is, for example, grid Structure or dielectric layer etc..Manufacturing method due to using the metal-layer structure provided by the invention forms the metal layer knot Structure, so that the impurity defect in the metal-layer structure is improved, i.e. impurity defect control is within specification, so that the gold Belonging to layer structure has uniform structure or surface, so that the performance of the metal-layer structure is improved, so that institute The performance for stating semiconductor devices is also improved.

The material of the metal-layer structure may include one of metals such as aluminium, copper, tungsten, nickel, gold, silver and titanium or at least The alloy of two kinds of compositions.The metal-layer structure may include the pole plate of metal interconnection structure, the pole plate of resistance or capacitor.Work as institute When to state metal-layer structure be metal interconnection structure, in subsequent packaging technology, there is the uniform metal interconnection of structure or surface Structure is improved the connection reliability between weld pad and lead therein, and then the problems such as avoid circuit malfunction, makes The reliability for obtaining semiconductor devices is improved.

One embodiment of the invention provides a kind of semiconductor devices, and the semiconductor devices includes: using provided by the invention The manufacturing method of the metal-layer structure is fabricated, and forms metal-layer structure on a wafer.The wafer may include lining Bottom and the film layer structure being formed on the substrate, the film layer structure formed on the wafer is, for example, gate structure or medium Layer etc..Manufacturing method due to using the metal-layer structure provided by the invention is fabricated, so that the gold formed The impurity defect belonged in layer structure is improved, i.e. impurity defect control is within specification, so that the metal-layer structure has Uniform structure or surface, so that the performance of the metal-layer structure is improved, so that the semiconductor devices Performance be also improved.

Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims Range.