阅读说明：本技术 一种超导薄膜及其制备方法 (A kind of superconducting thin film and preparation method thereof ) 是由 冯加贵 熊康林 丁孙安 武彪 孙骏逸 黄永丹 陆晓鸣 芮芳 于 2019-09-10 设计创作，主要内容包括：本发明公开了一种超导薄膜及其制备方法,其中,超导薄膜的制备方法包括：提供衬底；在所述衬底上形成刻蚀保护层,并在所述刻蚀保护层上形成掩膜图形；将所述刻蚀保护层作为掩膜,在所述衬底靠近所述刻蚀保护层的一侧沉积超导薄膜层,所述超导薄膜层包括图形化结构,所述图形化结构与所述掩膜图形一致。本发明提供了一种超导薄膜及其制备方法,以解决现有的超导薄膜制备出来的超导波导在不同位置的品质因子相差较大的问题。(The invention discloses a kind of superconducting thin films and preparation method thereof, wherein the preparation method of superconducting thin film includes: offer substrate；Etch-protecting layer is formed over the substrate, and forms mask pattern on the etch-protecting layer；Using the etch-protecting layer as exposure mask, superconducting thin film layer is deposited close to the side of the etch-protecting layer in the substrate, the superconducting thin film layer includes patterned structures, and the patterned structures are consistent with the mask pattern.The present invention provides a kind of superconducting thin films and preparation method thereof, to solve the problems, such as that the superconducting waveguide that existing superconducting thin film prepares differs larger in the quality factor of different location.)

1. a kind of preparation method of superconducting thin film characterized by comprising

Substrate is provided；

Etch-protecting layer is formed over the substrate, and forms mask pattern on the etch-protecting layer；

Using the etch-protecting layer as exposure mask, superconducting thin film is deposited close to the side of the etch-protecting layer in the substrate Layer, the superconducting thin film layer includes patterned structures, and the patterned structures are consistent with the mask pattern.

2. the preparation method of superconducting thin film according to claim 1, which is characterized in that

The material of the superconducting thin film layer is titanium nitride；The material of the substrate is High Resistivity Si.

3. the preparation method of superconducting thin film according to claim 1, which is characterized in that form etching over the substrate and protect Sheath, and mask pattern is formed on the etch-protecting layer, comprising:

Gas phase etching sacrificial layer is formed over the substrate；

Etch-protecting layer is formed far from the side of the substrate in the gas phase etching sacrificial layer；

Mask pattern is formed on the etch-protecting layer by focused ion beam technique；

The gas phase etching sacrificial layer is etched to the substrate is exposed via the mask pattern by gas phase dry carving technology, is formed Engraved structure.

4. the preparation method of superconducting thin film according to claim 3, which is characterized in that

The upright projection of the engraved structure of the gas phase etching sacrificial layer over the substrate covers and is greater than the etching The mask pattern of protective layer.

5. the preparation method of superconducting thin film according to claim 3, which is characterized in that

The gas phase etching sacrificial layer is formed by the technique that plasma enhanced chemical vapor deposits；The material of the gas phase etching sacrificial layer Material is silica；The material of the etch-protecting layer is amorphous silicon.

6. the preparation method of superconducting thin film according to claim 3, which is characterized in that by gas phase dry carving technology via institute It states mask pattern and etches the gas phase etching sacrificial layer to the substrate is exposed, formed after engraved structure, further includes:

The substrate for forming the etch-protecting layer is put into vacuum and prepares chamber, the first setting time is heated with the first preset temperature, And it is purged by bioactive molecule.

7. the preparation method of superconducting thin film according to claim 6, which is characterized in that

First preset temperature is 100~200 DEG C；First setting time is 20~60 minutes；

The bioactive molecule is hydrogen gas plasma.

8. the preparation method of superconducting thin film according to claim 3, which is characterized in that using the etch-protecting layer as covering Film deposits superconducting thin film layer close to the side of the etch-protecting layer in the substrate, comprising:

Using the etch-protecting layer as exposure mask, by described in magnetron sputtering technique or Pulsed laser molecular beam epitaxy process deposits Superconducting thin film layer.

9. the preparation method of superconducting thin film according to claim 8, which is characterized in that using the etch-protecting layer as covering Film, after the substrate deposits superconducting thin film layer close to the side of the etch-protecting layer, comprising:

The gas phase etching sacrificial layer is etched away by gas phase dry carving technology；

And the substrate for etching away the gas phase etching sacrificial layer is immersed in acetone soln and is ultrasonically treated, remove the etching Protective layer；

The substrate for removing the etch-protecting layer is put into vacuum to prepare in chamber, when with the first setting of heating of the first preset temperature Between, obtain superconducting thin film.

10. a kind of superconducting thin film, which is characterized in that by the preparation side of the described in any item superconducting thin films of the claims 1-9 Method is formed.

Technical field

The present invention relates to Superconducting Quantum chip technology fields more particularly to a kind of superconducting thin film and preparation method thereof.

Background technique

With the extensive use of hyundai electronics computer, classical electron computer is especially measured in large-scale data processing Submodule intends equal fields, and there are the limitations of memory space and speed, are limited in addition by Moore's Law, and scientist proposes to utilize quantum Effect carries out information processing and quantum calculation.To the phase at the beginning of the eighties in last century, the scientists such as Richard's Feynman propose to utilize Quantum principles manufacture quantum computer simultaneously simulates quantum-mechanical system with it.Subsequent theoretical physicist and computer scientist Theoretically confirm, quantum computer quantum simulation, quantum global search and key crack etc. have it is remote super classical The ability of computer.

The basic unit of quantum computer includes quantum bit, superconducting plane waveguide and related feeder line etc..Currently used for The superconductor of quantum computer is mainly metallic aluminium and metal niobium, the quality of the superconducting waveguide that both metals prepare because The average value of sub- Q is 10⁶Magnitude, but current study show that the superconducting thin film that deposition superconducting thin film layer is formed on substrate is used for Q value can be increased to 10 by superconducting waveguide⁷Magnitude.But the superconducting waveguide different location that superconducting thin film prepares Quality factor q difference it is larger.

Summary of the invention

The embodiment of the invention provides a kind of superconducting thin films and preparation method thereof, are prepared with solving existing superconducting thin film The larger problem of the difference of the quality factor of the superconducting waveguide different location come.

In a first aspect, the embodiment of the invention provides a kind of preparation methods of superconducting thin film, comprising: provide substrate；

Etch-protecting layer is formed over the substrate, and forms mask pattern on the etch-protecting layer；

It is thin close to the deposition superconduction of the side of the etch-protecting layer in the substrate using the etch-protecting layer as exposure mask Film layer, the superconducting thin film layer includes patterned structures, and the patterned structures are consistent with the mask pattern.

Optionally, the material of the superconducting thin film layer is titanium nitride；The material of the substrate is High Resistivity Si.

Optionally, etch-protecting layer is formed over the substrate, and forms mask pattern on the etch-protecting layer, is wrapped It includes: forming gas phase etching sacrificial layer over the substrate；It is formed in the gas phase etching sacrificial layer far from the side of the substrate Etch-protecting layer；Mask pattern is formed on the etch-protecting layer by focused ion beam technique；Pass through gas phase dry carving technology The gas phase etching sacrificial layer is etched to the substrate is exposed via the mask pattern, forms engraved structure.

Optionally, the engraved structure of the gas phase etching sacrificial layer over the substrate upright projection covering and it is big In the mask pattern of the etch-protecting layer.

Optionally, the gas phase etching sacrificial layer is formed by the technique that plasma enhanced chemical vapor deposits；The gas phase is carved The material for losing sacrificial layer is silica；The material of the etch-protecting layer is amorphous silicon.

Optionally, the gas phase etching sacrificial layer is etched to exposing via the mask pattern by gas phase dry carving technology It states substrate, is formed after engraved structure, further includes: the substrate for forming the etch-protecting layer is put into vacuum and prepares chamber, with the One preset temperature heats the first setting time, and is purged by bioactive molecule.

Optionally, first preset temperature is 100~200 DEG C；First setting time is 20~60 minutes；It is described Bioactive molecule is hydrogen gas plasma.

Optionally, heavy close to the side of the etch-protecting layer in the substrate using the etch-protecting layer as exposure mask Product superconducting thin film layer, comprising: using the etch-protecting layer as exposure mask, by magnetron sputtering technique or pulse laser molecular beam outside Prolong superconducting thin film layer described in process deposits.

Optionally, heavy close to the side of the etch-protecting layer in the substrate using the etch-protecting layer as exposure mask After product superconducting thin film layer, comprising: etch away the gas phase etching sacrificial layer by gas phase dry carving technology；And institute will be etched away The substrate for stating gas phase etching sacrificial layer, which immerses in acetone soln, to be ultrasonically treated, and the etch-protecting layer is removed；Institute will be removed The substrate for stating etch-protecting layer is put into vacuum and prepares in chamber, heats the first setting time with the first preset temperature, it is thin to obtain superconduction Film.

Second aspect, the embodiment of the invention also provides a kind of superconducting thin films, can be provided by any embodiment of that present invention The preparation method of superconducting thin film is formed.

In the present invention, when forming superconducting thin film, etch-protecting layer is formed on the substrate, and etch and form mask pattern, It then can be thin in the superconduction that substrate includes patterned structures close to the side of etch-protecting layer deposition using etch-protecting layer as exposure mask Film layer deposits the superconducting thin film of patterned structures to be formed on substrate, because superconduction film layer includes the graphical of deposition formation Structure, rather than flood deposits superconducting thin film layer and etches and forms patterned structures, then superconducting thin film layer is sinking in the present embodiment During product, there can be discontinuity, discontinuity can existing stress be released during the growth process to superconducting thin film layer It puts, effectively solves the problems, such as that different location growth stress difference is larger, thus the superconducting waveguide for avoiding superconducting thin film from preparing Larger problem is differed in the quality factor of different location, guarantees that superconducting waveguide has uniform, the higher quality factor of numerical value.

Detailed description of the invention

Fig. 1 is a kind of flow diagram of the preparation method of superconducting thin film provided in an embodiment of the present invention；

Fig. 2 is the flow diagram provided in an embodiment of the present invention that mask pattern is formed on etch-protecting layer；

The process schematic representation of Fig. 3 step of embodiment of the present invention S201；

The process schematic representation of Fig. 4 step of embodiment of the present invention S202；

Fig. 5 is the process schematic representation of step of embodiment of the present invention S203；

Fig. 6 is the process schematic representation of step of embodiment of the present invention S204；

Fig. 7 is the flow diagram of the preparation method of another superconducting thin film provided in an embodiment of the present invention；

Fig. 8 is the process schematic representation of step of embodiment of the present invention S307；

Fig. 9 is a kind of structural schematic diagram of superconducting thin film provided in an embodiment of the present invention.

Specific embodiment

The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.

The embodiment of the invention provides a kind of preparation methods of superconducting thin film, as shown in Figure 1, Fig. 1 is the embodiment of the present invention A kind of the step of flow diagram of the preparation method of the superconducting thin film provided, the preparation method of superconducting thin film, is as follows:

S101, substrate is provided.

S102, etch-protecting layer is formed on the substrate, and forms mask pattern on etch-protecting layer.

S103, surpass using etch-protecting layer as exposure mask in substrate close to the side of etch-protecting layer deposition superconducting thin film layer Leading film layer includes patterned structures, and patterned structures are consistent with mask pattern.

Before depositing superconducting thin film layer on substrate, the etch-protecting layer of flood can be deposited on substrate, and in flood Mask pattern is formed on etch-protecting layer.When forming superconducting thin film layer, using etch-protecting layer as exposure mask, in substrate close to quarter Lose protective layer side deposit superconducting thin film layer, then because etch-protecting layer relationship, deposit superconducting thin film layer when can obtain with The consistent patterned structures of mask pattern, then superconducting thin film layer Direct precipitation obtain piecemeal, or include gap or Disconnected superconducting thin film layer, intermittent superconducting film thin layer are less prone to asking for different location growth stress unevenness during the growth process Topic.The optional cut-off of the present embodiment connect be formed on the substrate the superconducting thin film layer of flood as superconducting thin film scheme as a comparison Example, in the comparative example, on the same substrate, the superconducting thin film layer growth stress difference at different location is larger, for example, for The superconducting thin film layer of flood, on the direction by center points toward edge, the stress of superconducting thin film layer is increasing, and film crystal grain inclines Rake angle is increasing, so that the thickness of the superconducting thin film layer of the center of superconducting thin film and marginal position has certain difference It is different, the difference of the quality factor of the different location for the superconducting waveguide being finally made so as to cause the superconducting thin film in comparative example compared with Greatly.In the present embodiment, the intermittent superconducting thin film layer including multiple gaps is directly formed, the gap location of superconducting thin film layer can be released Biggish stress is put, the difference of the quality factor of the different location for the superconducting waveguide for preventing superconducting thin film to be finally made is larger.

Optionally, the material of superconducting thin film layer can be titanium nitride；The material of substrate can be High Resistivity Si.In High Resistivity Si material Deposition forms the superconducting thin film that the superconducting film material of titanium nitride is formed on the substrate of matter, quality factor can be increased to 10⁷ Magnitude, in the present embodiment, High Resistivity Si is preferably (001) crystal orientation, it is easy to accomplish the growth of superconducting thin film layer.In addition, superconducting thin film The material of layer can also can be used for the material of superconducting waveguide for other, the present embodiment to the specific material of superconducting thin film layer without It limits.

The preparation method of superconducting thin film provided in an embodiment of the present invention is formed on the substrate etch-protecting layer, and etches shape It, then can be using etch-protecting layer as exposure mask, in substrate close to the side of etch-protecting layer deposition including graphical at mask pattern The superconducting thin film layer of structure, so that the superconducting thin film for depositing structure on substrate is formed, because superconduction film layer includes that deposition is formed Patterned structures, rather than flood deposition superconducting thin film layer and etch form patterned structures, then superconduction is thin in the present embodiment Film layer during the deposition process, can have discontinuity, and discontinuity existing during the growth process to superconducting thin film layer can answer Power is discharged, and effectively solves the problems, such as that different location growth stress difference is larger, so that superconducting thin film be avoided to prepare Superconducting waveguide differs larger problem in the quality factor of different location, guarantees superconducting waveguide with uniform, numerical value is higher Quality factor.

It is core of the invention thought above, following will be combined with the drawings in the embodiments of the present invention, to the embodiment of the present invention In technical solution be clearly and completely described.Based on the embodiments of the present invention, those of ordinary skill in the art are not having Under the premise of making creative work, every other embodiment obtained be shall fall within the protection scope of the present invention.

Fig. 2 is the flow diagram provided in an embodiment of the present invention that mask pattern is formed on etch-protecting layer, optionally, As shown in Fig. 2, etch-protecting layer is formed on the substrate, and mask pattern is formed on etch-protecting layer, may include:

S201, gas phase etching sacrificial layer is formed on the substrate.

By above-mentioned example it is found that substrate can be High Resistivity Si material.With reference to Fig. 3, Fig. 3 step of embodiment of the present invention S201's Process schematic representation deposits one layer of gas phase etching sacrificial layer 12, optionally, gas phase etching sacrificial layer on handling clean substrate 11 12 material can be silica, and silica is easy to grow in High Resistivity Si, and is easy in conjunction with High Resistivity Si.

Optionally, gas phase etching sacrificial layer 12 can be formed by the technique that plasma enhanced chemical vapor deposits.Plasma increases The major advantage being vapor-deposited by force is that depositing temperature is low, small to the structure and impact on physical properties of substrate 11, in this example, gas phase Etching sacrificial layer 12 is formed by the technique that plasma enhanced chemical vapor deposits, and can reduce the oxidation in growth course to substrate 11 Effect, to be protected to substrate 11；In addition, 12 uniformity of gas phase etching sacrificial layer that the present embodiment is formed is good, gas phase is carved Erosion 12 dense structure of sacrificial layer, pin hole are few, and adhesive force is strong.

S202, etch-protecting layer is formed far from the side of substrate in gas phase etching sacrificial layer.

With reference to Fig. 4, the process schematic representation of Fig. 4 step of embodiment of the present invention S202, one layer of gas phase etching of deposition on substrate 11 After sacrificial layer 12, etch-protecting layer 13 is formed on gas phase etching sacrificial layer 12, it is sacrificial that etch-protecting layer 13 covers gas phase etching Domestic animal layer 12.Optionally, etch-protecting layer 13 can be amorphous silicon material, easily cut, be convenient for the etching of subsequent masks figure. Optionally, the thickness of etch-protecting layer 13 can be 50nm~300nm；The thickness of gas phase etching sacrificial layer 12 can be 450nm ~500nm.

S203, mask pattern is formed on etch-protecting layer by focused ion beam technique.

It is the process schematic representation of step of embodiment of the present invention S203 with reference to Fig. 5, Fig. 5, is being carved by focused ion beam technique Etching forms mask pattern 131 on erosion protective layer 13, specifically, the substrate 11 for being formed with etch-protecting layer 13 is placed in scanning electricity In the vacuum cavity of mirror or focused ion beam system, suitable exposure mask is determined on the surface of etch-protecting layer 13 using scanning electron microscope Figure setting area, and mask pattern is drawn in mask pattern setting area, it is bombarded and is carved using the focused ion line of high energy Protective layer 13 is lost, the etch-protecting layer material at mask pattern is carved completely and is removed, forms mask pattern 131, so that gas phase etches The part-structure of sacrificial layer 12 is by mask pattern 131 to exposing outside.

S204, it is engraved via mask pattern etching gas phase etching sacrificial layer to substrate, formation is exposed by gas phase dry carving technology Hollow structure.

It is the process schematic representation of step of embodiment of the present invention S204 with reference to Fig. 6, Fig. 6, by gas phase dry carving technology to exposure mask Gas phase etching sacrificial layer 12 at figure performs etching, so that substrate 11 exposes, so that gas phase etching sacrificial layer 12 is formed Engraved structure 121.Gas phase dry carving technology is that one kind is reacted by catalyzed gas with corrosion material to be etched, ultimately forms etching figure The etching technics of shape, relative to wet etching, gas phase dry carving technology is not easily introduced impurity, and etching technics is simple.

Specifically, the substrate 11 that etch-protecting layer 13 etches after forming mask pattern 131 can be placed in the present embodiment In gas phase dry etching etching machine, and by catalyzed gas, illustratively, if gas phase etching sacrificial layer 12 is silica, catalyzed gas Can for gaseous state dehydrated alcohol, hydrogen fluoride gas and nitrogen mixed gas so that hydrogen fluoride gas by mask pattern 131 with The gas phase etching sacrificial layer 12 of exposing reacts, and forms engraved structure 121.Illustratively, the reaction temperature of dry carving technology can be 70 DEG C, pressure is 95Torr when etching.3 times 2 minutes etch cycles are carried out continuously, need to be evacuated to after having etched every time 0.1Torr。

Optionally, with continued reference to Fig. 6, upright projection of the engraved structure 121 of gas phase etching sacrificial layer 12 on substrate 11 Cover and be greater than the mask pattern 131 of etch-protecting layer 13.When convenient for being deposited subsequently through mask pattern 131, Bu Huiying The deposition shape of superconducting thin film layer is rung, also, gas phase etching sacrificial layer 12 is not contacted with post-depositional superconducting thin film layer, is convenient for shape At the superconducting thin film layer with gap, to guarantee that the growth stress of superconducting thin film layer different location is uniform, enhance in this implementation The uniformity of the quality factor for the superconducting waveguide that superconducting thin film prepares.

The present embodiment has made the etch-protecting layer for exposure mask on substrate, and has made the gas of support etch-protecting layer Phase etching sacrificial layer enables superconducting thin film layer piecemeal to deposit to substrate, and being formed has intermittent superconducting thin film layer, effectively The growth stress of superconducting thin film layer is discharged, guarantees that the superconducting waveguide that superconducting thin film is formed has uniform, the higher quality of numerical value The factor.

Optionally, using etch-protecting layer as exposure mask, superconducting thin film layer is deposited close to the side of etch-protecting layer in substrate, It may include: to be surpassed using etch-protecting layer as exposure mask by magnetron sputtering technique or Pulsed laser molecular beam epitaxy process deposits Lead film layer.Specifically, Fig. 7 is the process of the preparation method of another superconducting thin film provided in an embodiment of the present invention with reference to Fig. 7 The preparation method of schematic diagram, superconducting thin film includes the following steps:

S301, substrate is provided.

S302, gas phase etching sacrificial layer is formed on the substrate.

S303, etch-protecting layer is formed far from the side of substrate in gas phase etching sacrificial layer.

S304, mask pattern is formed on etch-protecting layer by focused ion beam technique.

S305, it is engraved via mask pattern etching gas phase etching sacrificial layer to substrate, formation is exposed by gas phase dry carving technology Hollow structure.

S306, the substrate for forming etch-protecting layer is put into vacuum preparation chamber, with the first setting of the first preset temperature heating Time, and purged by bioactive molecule.

Gas phase etching sacrificial layer is etched to substrate is exposed via mask pattern by gas phase dry carving technology, forms engraved structure Later, it can also include: that the substrate for forming etch-protecting layer is put into vacuum to prepare chamber, be set with the first preset temperature heating first It fixes time, and is purged by bioactive molecule, to etch the progress of the substrate after engraved structure to gas phase etching sacrificial layer Cleaning, prevents technique residual impurity from influencing the deposition of subsequent superconducting thin film layer.Specifically, vacuum can be prepared chamber is provided with first Preset temperature heating, and keep the first setting time so that impurity can high temperature evaporation, optionally, the first preset temperature can be 100~200 DEG C, the first setting time can be 20~60 minutes, to remove the impurity of gas phase dry carving technology formation.And pass through work Property molecule substrate is purged, with further remove gas phase dry carving technology formation impurity, optionally, bioactive molecule is hydrogen Plasma illustratively can control the hydrogen-ion of collimation to purge substrate, to obtain clean substrat structure.

S307, using etch-protecting layer as exposure mask, it is heavy by magnetron sputtering technique or Pulsed laser molecular beam epitaxy technique Product superconducting thin film layer.

It is the process schematic representation of step of embodiment of the present invention S307 with reference to Fig. 8, Fig. 8, the present embodiment can pass through magnetron sputtering Technique forms superconducting thin film layer 14, and the equipment of magnetron sputtering technique is simple, and easily controllable, adhesive force is strong, is capable of forming uniform Superconducting thin film layer 14.Pulsed laser molecular beam epitaxy technique can pass through laser irradiation superconducting thin film in ultra-high vacuum system The material of layer, so that the material of superconducting thin film layer 14 gasifies and formed on molecular beam deposition to substrate 11 by jeting furnace.Such as Fig. 8 It is shown, because upright projection of the engraved structure 121 of gas phase etching sacrificial layer 12 on substrate 11 covers and is greater than etching protection The mask pattern 131 of layer 13, then post-depositional superconducting thin film layer 14 is arranged not with gas phase etching sacrificial layer 12 to form interruption Superconducting thin film layer 14.Optionally, the material of superconducting thin film layer can be titanium nitride.

S308, gas phase etching sacrificial layer is etched away by gas phase dry carving technology.

It is a kind of structural schematic diagram of superconducting thin film provided in an embodiment of the present invention with reference to Fig. 9, Fig. 9, with reference to Fig. 8 and Fig. 9, It is regarding etch-protecting layer 13 as exposure mask, after substrate 11 deposits superconducting thin film layer close to the side of etch-protecting layer 13, is needing Gas phase etching sacrificial layer 12 is etched away, and the etching for being located at side of the gas phase etching sacrificial layer 12 far from substrate 11 is protected Layer 13 and superconducting thin film layer 14 are also easily removed.Gas phase dry carving technology and gas phase etching sacrificial layer 12 form engraved structure 121 Technique it is identical, concrete technology refer to above-mentioned engraved structure 121 technical process.Also, because superconducting thin film layer 14 and gas phase It is the presence of interval between etching sacrificial layer 12, when performing etching to gas phase etching sacrificial layer 12, superconducting thin film will not be destroyed The structure of layer 14.

S309 will be simultaneously ultrasonically treated, removing etching in the substrate immersion acetone soln for etching gas phase etching sacrificial layer Protective layer.

After the completion of etching gas phase etching sacrificial layer 12, the substrate of the superconducting thin film layer 14 of interruption setting can will be formed 11, i.e., the superconducting thin film of formation is immersed in acetone soln and be ultrasonically treated, protected to remove and wash remaining etching Sheath.

S310, the substrate for removing etch-protecting layer is put into vacuum preparation chamber, is set with the first preset temperature heating first It fixes time, obtains superconducting thin film.

By superconducting thin film after being taken out in acetone soln, superconducting thin film can be placed again into vacuum and prepare chamber, it is pre- with first If superconducting thin film was heated for the first predetermined time by temperature, so that the impurity for further removing superconducting thin film surface is remaining.Optionally, First preset temperature can be 100~200 DEG C, and the first setting time can be 20~60 minutes.

The present embodiment has made the etch-protecting layer for exposure mask on substrate, and has made the gas of support etch-protecting layer Phase etching sacrificial layer enables superconducting thin film layer piecemeal to deposit to substrate, and being formed has intermittent superconducting thin film layer, effectively The growth stress of superconducting thin film layer is discharged, guarantees that the superconducting waveguide that superconducting thin film is formed has uniform, the higher quality of numerical value The factor.Superconducting thin film layer is formed by magnetron sputtering technique or Pulsed laser molecular beam epitaxy process deposits, and uniformity is strong, into one The uniformity of the quality factor of step enhancing superconducting waveguide.

Based on same design, the embodiment of the invention also provides a kind of superconducting thin films, and illustratively, superconducting thin film can be such as figure Shown in 9, the superconducting waveguide of quantum computer can be used to form, the preparation method for leading film provided by any embodiment of that present invention It is formed, the beneficial effect with the preparation method for leading film that any embodiment of that present invention provides.

Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation, It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.