阅读说明：本技术 一种p型太阳能电池的制备方法 (A kind of preparation method of p-type solar battery ) 是由 白明华 包健 廖晖 左严严 张昕宇 金浩 于 2019-09-06 设计创作，主要内容包括：本发明公开了一种p型太阳能电池的制备方法,会先在p型硅衬底的背面进行硼扩散形成p型扩散层,再在p型扩散层表面喷淋去离子水以形成一水膜。由于该水膜与p型扩散层表面形成的BSG,可以在刻蚀p型硅衬底的正面以及在p型硅衬底的正面制绒时,保护p型扩散层不被破坏,以在p型硅衬底的背面形成硼背场,有效提高太阳能电池的性能；而先进行温度较高硼扩散,再进行温度较低的磷扩散,可以避免在进行硼扩散时对n型扩散层造成影响；而先制备硼背场,再对p型硅衬底的正面进行制绒,可以有效保护p型硅衬底正面的绒面的形貌不被破坏,从而进一步提高太阳能电池的性能。(The invention discloses a kind of preparation method of p-type solar battery, boron first can be carried out at the back side of p-type silicon substrate and diffuse to form p-diffusion layer, then in p-diffusion layer surface spraying deionized water to form a moisture film.The BSG formed due to the moisture film and p-diffusion layer surface; it can be in the front of etching p-type silicon substrate and in the positive making herbs into wool of p-type silicon substrate; it protects p-diffusion layer not to be destroyed, to form boron back surface field at the back side of p-type silicon substrate, effectively improves the performance of solar battery；And the advanced higher boron diffusion of trip temperature, then the lower phosphorus diffusion of temperature is carried out, n-type diffusion layer can be impacted to avoid when carrying out boron diffusion；And boron back surface field is first prepared, then making herbs into wool is carried out to the front of p-type silicon substrate, it can not be destroyed with the pattern of the positive flannelette of effective protection p-type silicon substrate, to further increase the performance of solar battery.)

1. a kind of preparation method of p-type solar battery characterized by comprising

Boron is carried out at the back side of p-type silicon substrate to spread to form p-diffusion layer；The p-diffusion layer surface is formed with BSG；

In the p-diffusion layer surface spraying deionized water to form a moisture film；

After forming the moisture film, the front of the p-type silicon substrate is etched to remove the positive p-type diffusion of the p-type silicon substrate Layer；

After etching the p-type silicon substrate front, phosphorus diffusion is carried out to form n-type diffusion layer in the front of the p-type silicon substrate；

The first grid line being electrically connected with the p-diffusion layer is set, and the second gate being electrically connected with the n-type diffusion layer is set Line, the p-type solar battery is made.

2. the method according to claim 1, wherein in the front of the etching p-type silicon substrate to remove After the positive p-diffusion layer of p-type silicon substrate, the method also includes:

In the positive making herbs into wool of the p-type silicon substrate to form the first flannelette；

The front in the p-type silicon substrate carries out phosphorus diffusion to form n-type diffusion layer and includes:

Phosphorus diffusion is carried out in the front of the p-type silicon substrate to form the n-type diffusion layer for covering first flannelette.

3. according to the method described in claim 2, it is characterized in that, the positive making herbs into wool in the p-type silicon substrate is to form First flannelette includes:

The first flannelette of pyramid shape is formed in the positive making herbs into wool of the p-type silicon substrate using alkaline Woolen-making liquid.

4. spreading the method according to claim 1, wherein the back side in p-type silicon substrate carries out boron with shape Include: at p-diffusion layer

Boron is carried out to the back side of p-type silicon substrate at a temperature of first environment to spread to form p-diffusion layer；The first environment temperature The value range of degree is 900 DEG C to 1000 DEG C, including endpoint value；

The front in the p-type silicon substrate carries out phosphorus diffusion to form n-type diffusion layer and includes:

Phosphorus diffusion is carried out to form n-type diffusion layer to the front of p-type silicon substrate at a temperature of second environment；The second environment temperature The value range of degree is 800 DEG C to 900 DEG C, including endpoint value.

5. the method according to claim 1, wherein carrying out phosphorus diffusion in the front of the p-type silicon substrate with shape After n-type diffusion layer, the method also includes:

Protective layer is set on the p-diffusion layer surface and the n-type diffusion layer surface respectively.

6. according to the method described in claim 5, it is characterized in that, described respectively in the p-diffusion layer surface and the N-shaped Protective layer is arranged in diffusion layer surface

Aluminium oxide passivation is carried out on the p-diffusion layer surface, to form aluminum oxide film layer；

Respectively in the n-type diffusion layer and the pellumina layer surface deposited silicon nitride, to form silicon nitride film layer.

7. the method according to claim 1, wherein carrying out phosphorus diffusion in the front of the p-type silicon substrate with shape After n-type diffusion layer, the method also includes:

On the n-type diffusion layer surface, selective emitter is set；

Second grid line that is electrically connected with the n-type diffusion layer of being arranged includes:

Second grid line mutually aligned with the selective emitter is set.

8. the method according to the description of claim 7 is characterized in that described be arranged selectivity hair on the n-type diffusion layer surface Emitter-base bandgap grading includes:

Default grid region by laser doping technique on the n-type diffusion layer surface carries out laser doping, described to be made Selective emitter.

9. the method according to claim 1, wherein the back side in p-type silicon substrate carry out boron diffusion with It is formed before p-diffusion layer, the method also includes:

Cleaning polishing is carried out to the surface of the p-type silicon substrate.

10. spreading the method according to claim 1, wherein the back side in p-type silicon substrate carries out boron with shape Include: at p-diffusion layer

Boron is carried out at the back side of p-type silicon substrate to spread to form p-diffusion layer；The boron source of the boron diffusion is following any one Or any combination:

BBr₃、BCl₃, boron slurry, boric acid.

Technical field

The present invention relates to technical field of solar batteries, more particularly to a kind of preparation method of p-type solar battery.

Background technique

Body silicon solar cell is the main support of modern photovoltaic electric power, and the P-type silicon battery as photovoltaic market mainstream passes through Long-run development, processing procedure is simple, mature, production cost is low, will continue to occupy photovoltaic market within a very long time predominantly Position, the battery at present with potentiality and extensive application are PERC battery.PERC(Passivated Emitter and Rear Cell) battery can be on the basis of unobvious increase solar battery preparation flow, hence it is evident that improves the conversion of solar battery Efficiency.

In the prior art, the preparation process flow of PERC battery be generally cleaning and texturing, diffusion, laser doping, Etching and removal PSG, deposit passivation layer and reflecting layer, back contacts, silk-screen printing and sintering.But in the prior art In, the performance of PERC battery is usually lower, so the performance for how improving PERC battery is that those skilled in the art are badly in need of solving The problem of.

Summary of the invention

The object of the present invention is to provide a kind of preparation methods of p-type solar battery, can effectively improve solar battery Performance.

In order to solve the above technical problems, the present invention provides a kind of preparation method of p-type solar battery, comprising:

Boron is carried out at the back side of p-type silicon substrate to spread to form p-diffusion layer；The p-diffusion layer surface is formed with BSG；

In the p-diffusion layer surface spraying deionized water to form a moisture film；

After forming the moisture film, the front of the p-type silicon substrate is etched to remove the positive p-type of the p-type silicon substrate Diffusion layer；

After etching the p-type silicon substrate front, phosphorus diffusion is carried out in the front of the p-type silicon substrate to form N-shaped expansion Dissipate layer；

The first grid line being electrically connected with the p-diffusion layer is set, and second be electrically connected with the n-type diffusion layer is set Grid line, the p-type solar battery is made.

Optionally, in the front of the etching p-type silicon substrate to remove the positive p-type diffusion of the p-type silicon substrate After layer, the method also includes:

In the positive making herbs into wool of the p-type silicon substrate to form the first flannelette；

The front in the p-type silicon substrate carries out phosphorus diffusion to form n-type diffusion layer and includes:

Phosphorus diffusion is carried out in the front of the p-type silicon substrate to form the n-type diffusion layer for covering first flannelette.

Optionally, the positive making herbs into wool in the p-type silicon substrate includes: to form the first flannelette

The first flannelette of pyramid shape is formed in the positive making herbs into wool of the p-type silicon substrate using alkaline Woolen-making liquid.

Optionally, described spread in the back side of p-type silicon substrate progress boron to form p-diffusion layer includes:

Boron is carried out to the back side of p-type silicon substrate at a temperature of first environment to spread to form p-diffusion layer；First ring The value range of border temperature is 900 DEG C to 1000 DEG C, including endpoint value；

The front in the p-type silicon substrate carries out phosphorus diffusion to form n-type diffusion layer and includes:

Phosphorus diffusion is carried out to form n-type diffusion layer to the front of p-type silicon substrate at a temperature of second environment；Second ring The value range of border temperature is 800 DEG C to 900 DEG C, including endpoint value.

Optionally, after the front of the p-type silicon substrate carries out phosphorus diffusion to form n-type diffusion layer, the method is also Include:

Protective layer is set on the p-diffusion layer surface and the n-type diffusion layer surface respectively.

Optionally, described to include: on the p-diffusion layer surface and n-type diffusion layer surface setting protective layer respectively

Aluminium oxide passivation is carried out on the p-diffusion layer surface, to form aluminum oxide film layer；

Respectively in the n-type diffusion layer and the pellumina layer surface deposited silicon nitride, to form silicon nitride film layer.

Optionally, after the front of the p-type silicon substrate carries out phosphorus diffusion to form n-type diffusion layer, the method is also Include:

On the n-type diffusion layer surface, selective emitter is set；

Second grid line that is electrically connected with the n-type diffusion layer of being arranged includes:

Second grid line mutually aligned with the selective emitter is set.

Optionally, described to include: in n-type diffusion layer surface setting selective emitter

Default grid region by laser doping technique on the n-type diffusion layer surface carries out laser doping, to be made The selective emitter.

Optionally, before the back side in p-type silicon substrate carries out boron diffusion to form p-diffusion layer, the method Further include:

Cleaning polishing is carried out to the surface of the p-type silicon substrate.

Optionally, described spread in the back side of p-type silicon substrate progress boron to form p-diffusion layer includes:

Boron is carried out at the back side of p-type silicon substrate to spread to form p-diffusion layer；The boron source of the boron diffusion is following any One or any combination:

BBr₃、BCl₃, boron slurry, boric acid.

A kind of preparation method of p-type solar battery provided by the present invention first can carry out boron at the back side of p-type silicon substrate P-diffusion layer is diffuseed to form, then in p-diffusion layer surface spraying deionized water to form a moisture film.Since the moisture film and p-type expand The BSG that layer surface is formed is dissipated, p can be protected in the front of etching p-type silicon substrate and in the positive making herbs into wool of p-type silicon substrate Type diffusion layer is not destroyed, and to form boron back surface field at the back side of p-type silicon substrate, effectively improves the performance of solar battery；And first The higher boron diffusion of temperature is carried out, then carries out the lower phosphorus diffusion of temperature, n-type diffusion layer can be made to avoid when carrying out boron diffusion At influence；And boron back surface field is first prepared, then making herbs into wool is carried out to the front of p-type silicon substrate, it can be positive with effective protection p-type silicon substrate The pattern of flannelette is not destroyed, to further increase the performance of solar battery.

Detailed description of the invention

It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root Other attached drawings are obtained according to these attached drawings.

Fig. 1 is a kind of flow chart of p-type preparation method of solar battery provided by the embodiment of the present invention；

Fig. 2 is a kind of flow chart of specific p-type preparation method of solar battery provided by the embodiment of the present invention.

Specific embodiment

Core of the invention is to provide a kind of preparation method of p-type solar battery.In the prior art, usually first exist The front of p-type silicon substrate carries out making herbs into wool and phosphorus diffusion prepares n-type diffusion layer；Again in the back side of p-type silicon substrate preparation p-type diffusion Layer forms pp⁺Height is tied.But form p-diffusion layer and need higher temperature, n-type diffusion layer can be impacted；If advanced The diffusion of row boron is that meeting impacts the pattern polishing of flannelette removing around the positive n-type diffusion layer of p-type silicon substrate is plating to, from And influence the performance of p-type solar cell properties.

And a kind of preparation method of p-type solar battery provided by the present invention, it can first be carried out at the back side of p-type silicon substrate Boron diffuses to form p-diffusion layer, then in p-diffusion layer surface spraying deionized water to form a moisture film.Due to the moisture film and p-type The BSG that layer surface is formed is spread, can be in the front of etching p-type silicon substrate and in the positive making herbs into wool of p-type silicon substrate, protection P-diffusion layer is not destroyed, and to form boron back surface field at the back side of p-type silicon substrate, effectively improves the performance of solar battery；And first The higher boron diffusion of temperature is carried out, then carries out the lower phosphorus diffusion of temperature, n-type diffusion layer can be made to avoid when carrying out boron diffusion At influence；And boron back surface field is first prepared, then making herbs into wool is carried out to the front of p-type silicon substrate, it can be positive with effective protection p-type silicon substrate The pattern of flannelette is not destroyed, to further increase the performance of solar battery.

In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise Under every other embodiment obtained, shall fall within the protection scope of the present invention.

Referring to FIG. 1, Fig. 1 is a kind of flow chart of p-type preparation method of solar battery provided by the embodiment of the present invention.

Referring to Fig. 1, in embodiments of the present invention, a kind of preparation method of p-type solar battery may include:

S101: boron is carried out at the back side of p-type silicon substrate and is spread to form p-diffusion layer.

In embodiments of the present invention, the p-diffusion layer surface is formed with BSG.

In this step, boron can be carried out at the back side of p-type silicon substrate to spread to form p-diffusion layer.Related boron diffusion Concrete technology can refer to the prior art, no longer be repeated herein.Under normal conditions, it can use and carry out boron in back-to-back fashion Diffusion.In this step, since used substrate is p-type silicon substrate, it will form BSG (boron on p-diffusion layer surface accordingly Silica glass).Specifically, the p-type silicon substrate be p-type monocrystalline substrate or p-type substrate, in embodiments of the present invention The specific type of p-type silicon substrate is not specifically limited.Specifically, the value range of the resistivity of above-mentioned p-type silicon substrate is logical Often between 0.3 Ω/cm to 7 Ω/cm, including endpoint value；The thickness of p-type silicon substrate is usually between 100 μm to 200 μm, packet Include endpoint value.

In embodiments of the present invention, silicon substrate usually has in use towards the surface of light source side, i.e. light Side surface, it is also referred to as positive；Correspondingly, silicon substrate usually has the surface of backlight side in use, i.e. backlight Side surface, the also referred to as back side.Above-mentioned p-diffusion layer this be at the back side of p-type silicon substrate.Specifically, in embodiments of the present invention, The boron source of above-mentioned boron diffusion can be following any one or any combination: BBr₃、BCl₃, boron slurry, boric acid.Carry out boron diffusion Used boron source can be BBr₃、BCl₃, boron slurry, one of boric acid or a variety of.In this step, the temperature of boron diffusion is logical Often between 900 DEG C to 1000 DEG C, including endpoint value；I.e. this step can be specially and serve as a contrast at a temperature of first environment to p-type silicon The back side at bottom carries out boron and spreads to form p-diffusion layer；The value range of the first environment temperature is 900 DEG C to 1000 DEG C, Including endpoint value.After carrying out boron diffusion, carrier concentration is usually 1.0 × 10 in p-diffusion layer¹⁸cm^-3To 5.0 × 10¹⁹cm^-3Between, including endpoint value；The sheet resistance of p-diffusion layer is usually between 50 Ω/ to 150 Ω/, including endpoint value； The junction depth of p-diffusion layer is usually between 0.1 μm to 1.2 μm, including endpoint value.

It should be noted that in this step, it will usually in the front of p-type silicon substrate around one layer of plating or partial region around plating P-diffusion layer.

S102: in p-diffusion layer surface spraying deionized water to form a moisture film.

In this step, it will usually be performed etching using chain type etching machine, while will use the spray head of chain type etching machine in p One layer of deionized water of type diffusion layer surface spraying, since the hydrophily of BSG is preferable, deionized water can be in p-diffusion layer surface shape P-diffusion layer is protected at one layer of uniform moisture film.

S103: after forming moisture film, the front of p-type silicon substrate is etched to remove the positive p-diffusion layer of p-type silicon substrate.

In this step, it will usually by chain type etching machine, using the nitration mixture etching solution of hydrofluoric acid and nitric acid to around plating To the positive p-diffusion layer of p-type silicon substrate, including around being plating to the positive BSG of p-type silicon substrate.At this point, due in S102 in p Type diffusion layer surface is formed with a moisture film, which can be isolated p-diffusion layer and etching solution, prevents etching solution from expanding p-type Scattered layer damages.

S104: behind etching p-type silicon substrate front, phosphorus diffusion is carried out in the front of p-type silicon substrate to form N-shaped diffusion Layer.

In this step, phosphorus diffusion can be carried out to form n-type diffusion layer in the front of p-type silicon substrate.Related phosphorus diffusion Concrete technology can refer to the prior art, no longer be repeated herein.Under normal conditions, it can use and carry out phosphorus in back-to-back fashion Diffusion.

Specifically, in this step, the temperature of phosphorus diffusion is usually between 800 DEG C to 900 DEG C, including endpoint value；I.e. originally Step can be specially to carry out phosphorus diffusion to the front of p-type silicon substrate at a temperature of second environment to form n-type diffusion layer；It is described The value range of second environment temperature is 800 DEG C to 900 DEG C, including endpoint value.After carrying out phosphorus diffusion, in n-type diffusion layer Carrier concentration is usually 1.0 × 10¹⁷cm^-3To 1.0 × 10²¹cm^-3Between, including endpoint value；The sheet resistance of n-type diffusion layer is usual Between 40 Ω/ to 200 Ω/, including endpoint value；The junction depth of n-type diffusion layer usually between 0.1 μm to 1.5 μm, including Endpoint value.

After this step, it will usually carry out edge isolation to p-type silicon substrate, i.e., etching diffuses to p-type silicon substrate side P-diffusion layer and n-type diffusion layer so that p-diffusion layer and n-type diffusion layer are mutually isolated, the specific work in relation to edge isolation Skill can refer to the prior art, no longer be repeated herein.Under normal conditions, it will use hydrofluoric acid solution and carry out edge isolation.

S105: the first grid line that setting is electrically connected with p-diffusion layer, and the second gate being electrically connected with n-type diffusion layer is set Line, p-type solar battery is made.

In this step, the first grid line directly contacted with p-diffusion layer usually is set on p-diffusion layer surface, with Realize being electrically connected for the first grid line and p-diffusion layer；Correspondingly, being in this step usually in the setting of n-type diffusion layer surface and n The second grid line that type diffusion layer directly contacts, to realize being electrically connected for the second grid line and n-type diffusion layer.Related first grid line and The specific material and specific structure of second grid line can refer to the prior art, no longer be repeated herein.Specifically, in this step In rapid would generally by silk-screen printing, sintering annealing and etc. prepare above-mentioned first grid line and the second grid line.

A kind of preparation method of p-type solar battery provided by the embodiment of the present invention, can be first at the back side of p-type silicon substrate It carries out boron and diffuses to form p-diffusion layer, then in p-diffusion layer surface spraying deionized water to form a moisture film.Due to the moisture film The BSG formed with p-diffusion layer surface, can be in the front of etching p-type silicon substrate and in the positive making herbs into wool of p-type silicon substrate When, it protects p-diffusion layer not to be destroyed, to form boron back surface field at the back side of p-type silicon substrate, effectively improves the property of solar battery Energy；And the higher boron diffusion of advanced trip temperature, then carry out the lower phosphorus diffusion of temperature, can to avoid when carrying out boron diffusion to N-shaped Diffusion layer impacts；And boron back surface field is first prepared, then making herbs into wool is carried out to the front of p-type silicon substrate, it can be served as a contrast with effective protection p-type silicon The pattern of the positive flannelette in bottom is not destroyed, to further increase the performance of solar battery.

It will implement in following inventions in relation to a kind of specific steps of p-type preparation method of solar battery provided by the present invention It is described in detail in example.

Referring to FIG. 2, Fig. 2 is a kind of specific p-type preparation method of solar battery provided by the embodiment of the present invention Flow chart.

Referring to fig. 2, in embodiments of the present invention, a kind of preparation method of p-type solar battery may include:

S201: cleaning polishing is carried out to the surface of p-type silicon substrate.

In this step, the surface of p-type silicon substrate can be cleaned and is polished, to remove p-type silicon substrate surface Impurity and damaging layer etc..

S202: boron is carried out at the back side of p-type silicon substrate and is spread to form p-diffusion layer.

S203: in p-diffusion layer surface spraying deionized water to form a moisture film.

S204: after forming moisture film, the front of p-type silicon substrate is etched to remove the positive p-diffusion layer of p-type silicon substrate.

In embodiments of the present invention, above-mentioned S202 to S204 and S101 to S103 in foregoing invention embodiment are almost the same, Detailed content please refers to foregoing invention embodiment, is no longer repeated herein.

S205: in the positive making herbs into wool of p-type silicon substrate to form the first flannelette.

Under normal conditions, in this step p-type silicon substrate can be sent in alkali slot, alkali is used by chain type etching machine Property Woolen-making liquid p-type silicon substrate front carry out making herbs into wool, to form the first flannelette of pyramid shape.Concrete technology in relation to making herbs into wool The prior art can be referred to, is no longer repeated herein.In this step, it is carried out since the back side of p-type silicon substrate is formed with BSG Protection, Woolen-making liquid will not influence the structure at the p-type silicon substrate back side in this step.

S206: phosphorus diffusion is carried out to form the n-type diffusion layer of the first flannelette of covering in the front of p-type silicon substrate.

This step and S104 in foregoing invention embodiment are almost the same, and detailed content please refers to foregoing invention embodiment, In This is no longer repeated.In this step, n-type diffusion layer needs to cover the first flannelette.

S207: selective emitter is set on n-type diffusion layer surface.

In this step, selective emitter can be set on n-type diffusion layer surface.So-called selective emitter is lightly doped Area and the alternately arranged emitter structure of heavily doped region, and following the second grid lines that n-type diffusion layer surface is arranged in can be with selection Heavily doped region in property emitter overlaps.

Specifically, can select laser doping technique that selective emitter is arranged in this step, i.e. this step can have Body are as follows: the default grid region by laser doping technique on the n-type diffusion layer surface carries out laser doping, described to be made Selective emitter.After carrying out laser doping, the carrier concentration of default grid region can be increased, thus in default grid Line region forms highly doped n-type diffusion layer.Concrete technology in relation to laser doping can refer to the prior art, no longer carry out herein It repeats.

S208: protective layer is set on p-diffusion layer surface and n-type diffusion layer surface respectively.

In this step, protective layer can be set on p-diffusion layer surface and n-type diffusion layer surface respectively, to protect p-type Diffusion layer and n-type diffusion layer are hardly damaged and aoxidize.Above-mentioned protective layer can also usually play other than protective effect Passivation, to improve the transfer efficiency of solar battery.

Specifically, first aluminium oxide passivation can be carried out to the p-diffusion layer surface when protective layer is arranged, to be formed Aluminum oxide film layer.Aluminum oxide film layer can play good passivation effect, to effectively increase the transfer efficiency of solar battery.It It afterwards, can be again respectively on the n-type diffusion layer surface and the pellumina layer surface deposited silicon nitride, to form silicon nitride film Layer.The silicon nitride film layer may generally function as anti-reflection film, the i.e. effect of antireflective film, to increase suction of the solar battery to light It receives.Specific structure and specific manufacture craft in relation to protective layer can refer to the prior art, no longer be repeated herein.

S209: the first grid line for be electrically connected with p-diffusion layer of setting, and setting and selective emitter mutually align the Two grid lines.

This step and S105 in foregoing invention embodiment are unanimous on the whole, and detailed content can refer to foregoing invention embodiment. Due to being provided with selective emitter in S207, then it is mutually right by the second grid line and selective emitter to need in this step Position, to guarantee that the recombination rate in carrier n-type diffusion layer can be effectively reduced in selective emitter, to improve solar battery Transfer efficiency.Technique in relation to aligning the second grid line and selective emitter mutually refers to the prior art, It is no longer repeated herein.

A kind of preparation method of p-type solar battery provided by the embodiment of the present invention, can be with by the first flannelette of setting Solar battery is effectively improved to the absorption efficiency of sunlight；It can effectively improve solar-electricity by the way that selective emitter is arranged The transfer efficiency in pond；It can be hardly damaged by the way that protective layer is arranged with effective protection p-diffusion layer and n-type diffusion layer and oxygen Change.

Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other The difference of embodiment, same or similar part may refer to each other between each embodiment.

Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These Function is implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Profession Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered Think beyond the scope of this invention.

The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology In any other form of storage medium well known in field.

Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning Covering non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes that A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, article or The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged Except there is also other identical elements in the process, method, article or apparatus that includes the element.

A kind of preparation method of p-type solar battery provided by the present invention is described in detail above.Herein Apply that a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help Understand method and its core concept of the invention.It should be pointed out that for those skilled in the art, not taking off , can be with several improvements and modifications are made to the present invention under the premise of from the principle of the invention, these improvement and modification also fall into this In invention scope of protection of the claims.