阅读说明：本技术 光调制装置 (Optic modulating device ) 是由 高木和久 藏本恭介 于 2017-04-25 设计创作，主要内容包括：光调制装置具备：具有第一电容的第一光调制器、具有比第一电容大的第二电容的第二光调制器、具有第一电感且一端与第一光调制器连接的第一供电路径、具有比第一电感大的第二电感且一端与第二光调制器连接的第二供电路径。在将横轴设为电感,将纵轴设为电容值的曲线图中,对预先确定的下限直线和预先确定的上限直线之间的预先确定的规定范围进行设定。以由第一电容和第一电感决定的第一坐标及由第二电容和第二电感决定的第二坐标落在该规定范围内的方式,规定第一电容、第一电感、第二电容及第二电感。(Optic modulating device has: the first optical modulator with first capacitor, the second optical modulator with second capacitor bigger than first capacitor, with the first inductance and the first supply path that one end is connect with the first optical modulator, with second inductance bigger than the first inductance and the second supply path that one end is connect with the second optical modulator.Horizontal axis is being set as inductance, the longitudinal axis is being set as in the curve graph of capacitance, the predetermined prescribed limit between predetermined lower limit straight line and predetermined upper limiting line is being set.The mode in the prescribed limit is fallen in, it is specified that first capacitor, the first inductance, the second capacitor and the second inductance with the first coordinate for being determined by first capacitor and the first inductance and by the second coordinate that the second capacitor and the second inductance determine.)

1. a kind of optic modulating device, has:

First optical modulator, with first capacitor；

Second optical modulator has second capacitor bigger than the first capacitor；

First supply path has the first inductance, and one end of first supply path is connect with first optical modulator；With And

Second supply path, has second inductance bigger than first inductance, one end of second supply path with it is described The connection of second optical modulator,

Horizontal axis is being set as inductance, the longitudinal axis is being set as in the curve graph of capacitance, it is by predetermined lower limit straight line and true in advance Predetermined prescribed limit is set as between fixed upper limiting line,

In the graph, by inductance=670nH and capacitance=0.05pF is set as at first point,

In the graph, by inductance=1340nH and capacitance=0.11pF is set as second point,

In the graph, by inductance=2010nH and capacitance=0.155pF is set as thirdly,

The lower limit straight line is to pass through and the straight line thirdly in the graph at described first point,

The upper limiting line is with slope identical with the lower limit straight line and to pass through the second point in the curve graph Straight line,

First inductance and second inductance are 670nH~2010nH,

With the first coordinate determined by the first capacitor and first inductance and by second capacitor and second electricity The second coordinate that sense determines falls in the mode of the prescribed limit, it is specified that the first capacitor, first inductance, described second Capacitor and second inductance.

2. optic modulating device shown according to claim 1, wherein

Have:

First supplies electric signal for electric substrate, to the other end of first supply path；And

Second supplies electric signal for electric substrate, to the other end of second supply path,

Described first has first end resistance and the first grounding electrode for electric substrate, one end of the first end resistance via First supply path is connect with first optical modulator, the other end of the first end resistance and first ground connection Electrode connection,

Described second has second end resistance and the second grounding electrode for electric substrate, one end of the second end resistance via Second supply path is connect with second optical modulator, the other end of the second end resistance and second ground connection Electrode connection,

The first end resistance and the second end resistance are greater than or equal to 120 Ω.

3. optic modulating device shown according to claim 1, wherein

Have:

Semiconductor substrate is integrated with first optical modulator and second optical modulator；

First, for electric substrate, is configured at the side of the semiconductor substrate, connect with the other end of first supply path； And

Second for electric substrate, by with described first for electric substrate together with clip the semiconductor substrate in a manner of be configured at it is described The other side of semiconductor substrate is connect with the other end of second supply path.

4. optic modulating device shown according to claim 1, wherein

Have:

Tube socket, with upper surface and the block part being set on the upper surface；

Semiconductor chip is installed on the side of the block part, is integrated with first light in the interarea of the semiconductor chip Modulator and second optical modulator；And

First lead pin and the second terminal pins, they are set to the tube socket,

The first lead pin is connect with the other end of first supply path, second terminal pins and described second The other end of supply path connects.

Technical field

The present invention relates to optic modulating devices.

Background technique

In the past, such as disclosed in Japanese Unexamined Patent Publication 2015-138111 bulletin as, it is known that be integrated with multiple light modulations The optic modulating device of device.This optic modulating device is used as wavelength multiplexing transmitter.Wavelength multiplexing transmitter by from wavelength not With multiple output lights for issuing of multiple electric field absorptive-type modulator integrated semiconductor lasers carry out multiplex and output optical signal. The optic modulating device that the bulletin is related to keeps the element duration of multiple optical modulators different from each other.Specifically, making and other light tune Device processed is short compared to the other optical modulators of element length ratio of the specific optical modulator of oscillation wave length.Disclosing as a result, does not make The magnitude of current increase of the per unit length of semiconductor laser can be to the electric field absorption-type light modulation by the channel in shortwave The loss of light caused by device compensates.

Patent document 1: Japanese Unexamined Patent Publication 2015-138111 bulletin

Summary of the invention

Multiple optical modulators are respectively connect via supply path with for electric substrate.For electric substrate via supply path to light tune Device processed provides electric signal.If applying voltage to optical modulator by electric signal, the light absorption end of optical modulator is applied according to this Making alive and shift.As a result, realizing light modulation.Optical modulator has parasitic capacitance, and supply path has inductance.In light modulation Occurs the resonance generated by the capacitor and inductance in the frequency characteristic of device.It is different from each other in the length of multiple supply paths In the case of, the inductance of multiple supply paths is also different from each other.If inductance to be existed to the multiple supply paths and multiple light of fluctuation Modulator connects, then the frequency characteristic fluctuation between multiple optical modulators.The extinction ratio between multiple optical modulators as a result, Fluctuation is generated, there is transmission quality deterioration such problems.

As documented by the 0002nd section of Japanese Unexamined Patent Publication 2015-138111 bulletin, as the super of composition a new generation The exploitation of one of specification of high speed network, 100Gb Ethernet (registered trademark) is promoting.In the LAN- used with the specification In WDM, in the data of each carrying 25Gb/s or 28Gb/s of 4 different light of wavelength each other.By to carrying data 4 light carry out multiplex, to generate the signal of 100Gb/s.For high-quality carry out such data transmission, it is necessary to small In the frequency domain of 28GHz, the frequency characteristic fluctuation between multiple optical modulators is inhibited.

The present invention proposes to solve project as described above, is being less than or equal to it is intended that providing The optic modulating device inhibited is fluctuated in the frequency domain of 28GHz to the frequency characteristic between multiple optical modulators.

To solve the above-mentioned problems, optic modulating device has: the first optical modulator, with first capacitor；Second light tune Device processed has second capacitor bigger than the first capacitor；First supply path has the first inductance, and first for circuit One end of diameter is connect with first optical modulator；And second supply path, there is second bigger than first inductance Inductance, one end of the second supply path are connect with second optical modulator.Horizontal axis is being set as inductance, the longitudinal axis is set as capacitor In the curve graph of value, predetermined regulation model will be set as between predetermined lower limit straight line and predetermined upper limiting line It encloses.It in the graph, in the graph, will be electric by inductance=670nH and capacitance=0.05pF is set as at first point Sense=1340nH and capacitance=0.11pF is set as second point, in the graph, by inductance=2010nH and capacitance= 0.155pF is set as thirdly, and the lower limit straight line is to pass through and thirdly straight in the graph at described first point Line, the upper limiting line are with slope identical with the lower limit straight line and to pass through the second point in the curve graph Straight line.First inductance and second inductance are 670nH~2010nH, by the first capacitor and first inductance Determine the first coordinate and the prescribed limit is fallen in by the second coordinate that second capacitor and second inductance determine Mode is, it is specified that the first capacitor, first inductance, second capacitor and second inductance.

The effect of invention

According to above-mentioned optic modulating device, to meet the capacitor of optical modulator disclosed herein and the inductance of supply path The mode of correlated condition optical modulator and supply path are designed.As a result, providing in the frequency for being less than or equal to 28GHz The optic modulating device inhibited is fluctuated in domain to the frequency characteristic between multiple optical modulators.

Detailed description of the invention

Fig. 1 is the top view for the optic modulating device for indicating that embodiment 1 is related to.

Fig. 2 is the partial enlarged view for the optic modulating device that embodiment 1 is related to.

Fig. 3 is the top view for the optic modulating device for indicating that the variation of embodiment 1 is related to.

Fig. 4 is the experiment of the relationship between the conductor length of the element duration for indicating optical modulator, capacitor and supply path As a result curve graph.

Fig. 5 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Fig. 6 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Fig. 7 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Fig. 8 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Fig. 9 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 10 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 11 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 12 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 13 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 14 is the experimental result and result of study for indicating the relationship of the inductance of capacitor and supply path of optical modulator Curve graph.

Figure 15 is the figure for indicating experimental result relevant to end resistance.

Figure 16 is the figure for indicating experimental result relevant to end resistance.

Figure 17 is the figure for indicating experimental result relevant to end resistance.

Figure 18 is the figure for indicating experimental result relevant to end resistance.

Figure 19 is the figure for indicating experimental result relevant to end resistance.

Figure 20 is the figure for indicating experimental result relevant to end resistance.

Figure 21 is the figure for indicating experimental result relevant to end resistance.

Figure 22 is the figure for indicating experimental result relevant to end resistance.

Figure 23 is the figure for indicating experimental result relevant to end resistance.

Figure 24 is the figure for illustrating the structure of optic modulating device that embodiment 2 is related to.

Figure 25 is the figure for illustrating the structure of optic modulating device that embodiment 2 is related to.

Figure 26 is the top view for the optic modulating device for indicating that the comparative example opposite with embodiment is related to.

Figure 27 is the figure of the frequency characteristic for the optic modulating device for indicating that the comparative example opposite with embodiment is related to.

Figure 28 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 29 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Figure 30 is the figure for indicating the experimental result of the relationship of the inductance of capacitor and supply path of optical modulator.

Specific embodiment