阅读说明：本技术 半导体装置 (Semiconductor device ) 是由 三浦猛 于 2017-04-25 设计创作，主要内容包括：在基底材料(1)之上形成有绝缘膜(2)。绝缘膜(2)是在中央部在从基底材料剥离的方向承受应力的压缩膜。在绝缘膜(2)的中央部形成有凹部(3),厚度局部地变薄。(Insulating film (2) are formed on base material (1).Insulating film (2) is the compressive films to meet with stresses in central portion in the direction removed from base material.Recess portion (3) are formed in the central portion of insulating film (2), thickness is locally thinning.)

1. a kind of semiconductor device, which is characterized in that have:

Base material；And

Insulating film is formed on the base material,

The insulating film is in central portion in the compressive films to meet with stresses from the direction that the base material is removed,

It is formed with recess portion in the central portion of the insulating film, thickness is locally thinning.

2. a kind of semiconductor device, which is characterized in that have:

Base material；And

Insulating film is formed on the base material,

The insulating film is in peripheral part in the stretched film to meet with stresses from the direction that the base material is removed,

It is formed with recess portion in the peripheral part of the insulating film, thickness is locally thinning.

3. a kind of semiconductor device, which is characterized in that have:

1st wiring；

Insulating film is formed on the 1st wiring；And

2nd wiring is formed on the insulating film, has opening portion,

Central portion in the opening portion is formed with recess portion in the insulating film, and thickness is locally thinning.

4. a kind of semiconductor device, which is characterized in that have:

1st wiring；

Insulating film is formed on the 1st wiring；And

2nd wiring is formed on the insulating film, has opening portion,

In the opening edge of the opening portion, it is formed with recess portion in the insulating film, thickness is locally thinning.

5. a kind of semiconductor device, which is characterized in that have:

1st wiring；

Insulating film is formed on the 1st wiring, has opening portion；And

2nd wiring is formed on the insulating film, is connect via the opening portion with the 1st wiring,

In the lower part of the end of the 2nd wiring, it is formed with recess portion in the insulating film, thickness is locally thinning.

6. semiconductor device according to claim 5, which is characterized in that

In the recess portion, the insulating film is cut off.

7. a kind of semiconductor device, which is characterized in that have:

1st wiring；

Insulating film is formed on the 1st wiring, has opening portion；And

2nd wiring is formed on the insulating film, is connect via the opening portion with the 1st wiring,

The end of the opening portion is taper.

8. semiconductor device according to any one of claim 1 to 7, which is characterized in that

The insulating film is the SiN film that Si/N component ratio stepwise rises from lower to upper part.

9. semiconductor device according to any one of claim 1 to 7, which is characterized in that

The SiN film that the insulating film has SiO film and formed on the SiO film.

Technical field

The present invention relates to the semiconductor devices that insulating film is formd on wiring closet or wiring.

Background technique

For semiconductor device, in order to which chip size is limited in minimum limit, wiring is dimensionally overlapped.And And in order to ensure insulating properties, insulating film is formed on wiring closet or wiring.With regard to the lit-par-lit structure of the wiring and insulating film Speech, due to the fluctuation etc. of various parameters, generate following undesirable condition sometimes, that is, insulation film stripping or float or Thus crack is formed in film.Although film or construction are respectively different, as the anti-removing countermeasure of insulating film, have studied as follows Countermeasure, that is, adhesion improves (for example, referring to patent document 1), film forming post-processing (for example, referring to patent document 2), film quality control Make (for example, referring to patent document 3), the insertion (for example, referring to non-patent literature 1) for mitigating film etc..

Patent document 1: Japanese Unexamined Patent Publication 2009-231399 bulletin

Patent document 2: Japanese Unexamined Patent Publication 2008-311543 bulletin

Patent document 3: Japanese Unexamined Patent Publication 2010-171072 bulletin

Non-patent literature 1:NHK skill grinds R&D/No.153/2015P.29-34

Summary of the invention

For previous semiconductor device, the insulating film formed on wiring closet or wiring, which exists, carrys out self-insulating film Or the position that the stress of metal wiring is concentrated.At the position, although accidentally occurring, can intermittently occur film stripping, Film floats, the crack of film.Therefore, because worrying quality and being determined as NG, yield rate is significantly affected.As its reason, think To following situations, that is, the deterioration of the adhesion of the contact portion such as the influence of organic detritus, on insulating film formed wiring when The unstability of pre-treatment, insulating film stress.Wherein, the stress of insulating film is considered as basic reason, has studied insulation The film quality of film controls or the various countermeasures such as the insertion of stress relaxation layer.But not for ensuring the freedom degree of characteristic, as a result It is that cannot steadily ensure yield rate and quality.

The present invention is to propose in order to solve above-mentioned problem, and its object is to obtain steadily ensuring yield rate With the semiconductor device of quality.

Semiconductor device of the present invention is characterized in that having: base material；And insulating film, it is formed in institute It states on base material, the insulating film is in central portion in the compression to meet with stresses from the direction that the base material is removed Film is formed with recess portion in the central portion of the insulating film, and thickness is locally thinning.

The effect of invention

In the present invention, it is formed with recess portion in compressive films, that is, insulating film central portion, thickness is locally thinning.As a result, can It is enough to reduce the stress born in the direction removed from base material, therefore, it can steadily inhibit the removing of insulating film, float It rises, crack.As a result, it is possible to steadily ensure yield rate and quality.

Detailed description of the invention

Fig. 1 is the sectional view for indicating the membrane stress of compressive films and stretched film.

Fig. 2 is the sectional view for the semiconductor device for indicating that embodiments of the present invention 1 are related to.

Fig. 3 is the sectional view for the semiconductor device for indicating that comparative example 1 is related to.

Fig. 4 is the figure of result obtained from indicating to test the film thickness of insulating film and the relationship of membrane stress.

Fig. 5 is the sectional view for the semiconductor device for indicating that embodiments of the present invention 2 are related to.

Fig. 6 is the sectional view for the semiconductor device for indicating that comparative example 2 is related to.

Fig. 7 is the sectional view for the semiconductor device for indicating that embodiments of the present invention 3 are related to.

Fig. 8 is the sectional view for the semiconductor device for indicating that comparative example 3 is related to.

Fig. 9 is the sectional view for the semiconductor device for indicating that embodiments of the present invention 4 are related to.

Figure 10 is the sectional view for the semiconductor device for indicating that embodiments of the present invention 5 are related to.

Figure 11 is the sectional view for the semiconductor device for indicating that embodiments of the present invention 6 are related to.

Figure 12 is the sectional view for the interlayer dielectric for indicating that embodiments of the present invention 7 are related to.

Figure 13 is the figure for indicating the relationship of Si/N component ratio and etch-rate.

Figure 14 is the sectional view for the interlayer dielectric for indicating that embodiments of the present invention 8 are related to.

Specific embodiment

It is described with reference to the semiconductor device that embodiments of the present invention are related to.To identical or corresponding structural element Identical label is marked, the repetitive description thereof will be omitted sometimes.