阅读说明：本技术 样品仓、光谱检测系统、样品厚度测量方法及装置 (Sample bin, spectrum detection system, sample thickness measurement method and device ) 是由 黄培雄 张前成 于 2019-09-30 设计创作，主要内容包括：本申请适用于计算机技术领域,提出一种样品仓、光谱检测系统、样品厚度测量方法及装置,样品仓包括相对的第一侧壁和第二侧壁；第一侧壁反射太赫兹波形成第一反射信号,透射太赫兹波形成第一透射信号；第二侧壁全反射第二透射信号,形成第二反射信号；待测样品的第一表面和第二表面分别反射第一透射信号形成第三反射信号和第四反射信号。由于太赫兹波在空气中的传播速度、第一侧壁和第二侧壁之间的距离均已知,因此通过样品仓测量出接收到第一反射信号和第三反射信号的时间差,以及接收到第二反射信号和第四反射信号的时间差,可以计算待测样品的厚度,能够实现对未知折射率样品的厚度进行测量。(the application is applicable to the technical field of computers, and provides a sample bin, a spectrum detection system, a sample thickness measuring method and a sample thickness measuring device, wherein the sample bin comprises a first side wall and a second side wall which are opposite; the first side wall reflects the terahertz waves to form first reflection signals, and transmits the terahertz waves to form first transmission signals; the second side wall totally reflects the second transmission signal to form a second reflection signal; the first surface and the second surface of the sample to be detected respectively reflect the first transmission signal to form a third reflection signal and a fourth reflection signal. Because the propagation speed of the terahertz wave in the air and the distance between the first side wall and the second side wall are known, the time difference of receiving the first reflection signal and the third reflection signal and the time difference of receiving the second reflection signal and the fourth reflection signal are measured through the sample bin, the thickness of the sample to be measured can be calculated, and the measurement of the thickness of the sample with unknown refractive index can be realized.)

1. The sample bin is characterized by comprising a first side wall and a second side wall which are arranged oppositely, wherein a space between the first side wall and the second side wall is used for placing a sample to be measured;

The first side wall is used for reflecting incident terahertz waves to form a first reflection signal and transmitting the terahertz waves to form a first transmission signal;

The second side wall is used for totally reflecting the second transmission signal to form a second reflection signal; the second transmission signal is formed by the first transmission signal transmitting through the sample to be detected;

The sample to be tested comprises a first surface and a second surface which are opposite, and the first surface and the second surface are parallel to the first side wall and the second side wall;

The first transmission signal is transmitted to the first surface and reflected to form a third reflection signal, and is transmitted to the second surface and reflected to form a fourth reflection signal; the distance between the first side wall and the second side wall, the first reflected signal, the second reflected signal, the third reflected signal, and the fourth reflected signal are used to calculate the thickness between the first surface and the second surface of the sample to be measured.

2. The sample compartment of claim 1, further comprising a displacement device for moving the sample to be tested in a direction perpendicular to the first side wall and the second side wall.

3. the sample chamber according to claim 1 or 2, wherein the inner surface of the first sidewall opposite to the second sidewall is provided with a first thin film with a preset size, and the first thin film is used for reflecting incident terahertz waves to form the first reflection signal and transmitting the terahertz waves to form the first transmission signal;

a second thin film is arranged on the inner surface of the second side wall, which is opposite to the first side wall, and the second thin film is used for enabling the second transmission signal to be subjected to total reflection to form a second reflection signal; the second transmission signal is formed by the first transmission signal transmitting through the sample to be measured.

4. A spectroscopic detection system, comprising: a terahertz emitter, a terahertz wave detector, and the sample chamber of any one of claims 1 to 3;

The terahertz transmitter is used for transmitting terahertz waves to a first side wall of the sample bin;

the terahertz wave detector is used for receiving a first reflection signal reflected by the first side wall, a second reflection signal reflected by the second side wall of the sample bin, a third reflection signal reflected by the first surface of the sample to be detected and a fourth reflection signal reflected by the second surface of the sample to be detected;

The distance between the first side wall and the second side wall, the first reflected signal, the second reflected signal, the third reflected signal, and the fourth reflected signal are used to calculate the thickness between the first surface and the second surface of the sample to be measured.

5. a method for measuring a thickness of a sample based on a spectroscopic detection system, wherein the spectroscopic detection system is the spectroscopic detection system of claim 4, the method comprising:

After a sample to be detected is detected in the sample bin, acquiring time information of a reflection signal detected by the spectrum detection system, wherein the reflection signal comprises a first reflection signal, a second reflection signal, a third reflection signal and a fourth reflection signal;

And calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal.

6. The method of claim 5, wherein calculating the thickness between the first surface and the second surface of the sample to be tested based on the distance between the first sidewall and the second sidewall, the first reflected signal, the second reflected signal, the third reflected signal, and the fourth reflected signal comprises:

Calculating a first time difference between a first moment when the first reflection signal is detected and a third moment when the third reflection signal is detected, wherein the first time difference is a first time length for transmitting the incident terahertz waves between the inner surface of the first side wall and the first surface of the sample to be detected;

Calculating a second time difference between a second moment when the second reflection signal is detected and a fourth moment when the fourth reflection signal is detected, wherein the second time difference is a second time length for the incident terahertz waves to be transmitted between the second surface of the sample to be detected and the inner surface of the second side wall;

and calculating the thickness between the first surface and the second surface of the sample to be measured according to a preset first distance between the first side wall and the second side wall, the first time length and the second time length.

7. The method according to claim 5 or 6, wherein the acquiring the spectral information of the reflected signal detected by the spectrum detection system after detecting the sample to be detected in the sample chamber comprises:

Controlling a displacement device of the sample bin to drive the sample to be detected to move in a direction perpendicular to the first side wall and the second side wall;

Respectively acquiring the corresponding spectral information when the sample to be detected moves to different positions;

and performing signal displacement and enhancement processing on all the spectrum information to respectively obtain the enhanced first reflection signal, the enhanced second reflection signal, the enhanced third reflection signal and the enhanced fourth reflection signal.

8. an apparatus for measuring the thickness of a sample based on a spectroscopic detection system, comprising:

the acquisition module is used for acquiring time information of a reflection signal detected by the spectrum detection system after a sample to be detected in the sample bin is detected, wherein the reflection signal comprises a first reflection signal, a second reflection signal, a third reflection signal and a fourth reflection signal;

And the calculating module is used for calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal.

9. A processing apparatus comprising a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor when executing the computer program implements the method for measuring the thickness of a sample based on a spectroscopic detection system of any one of claims 5 to 7.

10. A computer-readable storage medium, in which a computer program is stored, which, when being executed by a processor, carries out a method for measuring a thickness of a sample based on a spectroscopic detection system according to any one of claims 5 to 7.

Technical Field

The application belongs to the technical field of computers, and particularly relates to a sample bin, a spectrum detection system, a sample thickness measurement method and a sample thickness measurement device.

background

when the terahertz pulse is used for measuring the thickness, a time difference method is often adopted. The thickness measurement by the traditional time difference method needs to measure the time difference of the reflected pulse on the sample, and the thickness of the sample can be obtained only by knowing the refractive index of the sample, so that the thickness of the sample with unknown refractive index can not be measured.

disclosure of Invention

in view of this, embodiments of the present application provide a sample chamber, a spectrum detection system, a sample thickness measurement method, an apparatus, a processing device, and a storage medium, so as to solve the problem in the prior art that the thickness of a sample with unknown refractive index cannot be measured.

A first aspect of an embodiment of the present application provides a sample chamber, including a first sidewall and a second sidewall that are disposed opposite to each other, where a space between the first sidewall and the second sidewall is used for placing a sample to be measured;

The first side wall is used for reflecting incident terahertz waves to form a first reflection signal and transmitting the terahertz waves to form a first transmission signal;

the second side wall is used for totally reflecting the second transmission signal to form a second reflection signal; the second transmission signal is formed by the first transmission signal transmitting through the sample to be detected;

the sample to be tested comprises a first surface and a second surface which are opposite, and the first surface and the second surface are parallel to the first side wall and the second side wall;

the first transmission signal is transmitted to the first surface and reflected to form a third reflection signal, and is transmitted to the second surface and reflected to form a fourth reflection signal; the distance between the first side wall and the second side wall, the first reflected signal, the second reflected signal, the third reflected signal, and the fourth reflected signal are used to calculate the thickness between the first surface and the second surface of the sample to be measured.

In an optional implementation manner, the apparatus further includes a displacement device, and the displacement device is configured to drive the sample to be tested to move in a direction perpendicular to the first side wall and the second side wall.

in an optional implementation manner, a first thin film with a preset size is arranged on an inner surface of the first side wall opposite to the second side wall, and the first thin film is used for reflecting incident terahertz waves to form the first reflection signal and transmitting the terahertz waves to form the first transmission signal;

A second thin film is arranged on the inner surface of the second side wall, which is opposite to the first side wall, and the second thin film is used for enabling the second transmission signal to be subjected to total reflection to form a second reflection signal; the second transmission signal is formed by the first transmission signal transmitting through the sample to be measured.

a second aspect of embodiments of the present application provides a spectroscopic detection system comprising: a terahertz emitter, a terahertz wave detector and the sample chamber of the first aspect;

The terahertz transmitter is used for transmitting terahertz waves to a first side wall of the sample bin;

the terahertz wave detector is used for receiving a first reflection signal reflected by the first side wall, a second reflection signal reflected by the second side wall of the sample bin, a third reflection signal reflected by the first surface of the sample to be detected and a fourth reflection signal emitted by the second surface of the sample to be detected;

the distance between the first side wall and the second side wall, the first reflected signal, the second reflected signal, the third reflected signal, and the fourth reflected signal are used to calculate the thickness between the first surface and the second surface of the sample to be measured.

A third aspect of the present application provides a method for measuring a thickness of a sample based on a spectrum detection system, where the spectrum detection system is the spectrum detection system according to the second aspect, and the method includes:

after a sample to be detected is detected in the sample bin, acquiring time information of a reflection signal detected by the spectrum detection system, wherein the reflection signal comprises a first reflection signal, a second reflection signal, a third reflection signal and a fourth reflection signal;

and calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal.

In an optional implementation manner, the calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first sidewall and the second sidewall, the first reflection signal, the second reflection signal, the third reflection signal, and the fourth reflection signal includes:

calculating a first time difference between a first moment when the first reflection signal is detected and a third moment when the third reflection signal is detected, wherein the first time difference is the transmission time length of the incident terahertz waves between the inner surface of the first side wall and the first surface of the sample to be detected;

Calculating a second time difference between a second moment when the second reflection signal is detected and a fourth moment when the fourth reflection signal is detected, wherein the second time difference is the time length of transmission of the incident terahertz waves between the second surface of the sample to be detected and the inner surface of the second side wall;

And calculating the thickness between the first surface and the second surface of the sample to be measured according to a preset first distance between the first side wall and the second side wall, the first time difference and the second time difference.

in an optional implementation manner, after detecting that there is a sample to be detected in the sample chamber, acquiring spectral information of a reflected signal detected by the spectral detection system includes:

controlling a displacement device of the sample bin to drive the sample to be detected to move in a direction perpendicular to the first side wall and the second side wall;

respectively acquiring the corresponding spectral information when the sample to be detected moves to different positions;

And performing signal displacement and enhancement processing on all the spectrum information to respectively obtain the enhanced first reflection signal, the enhanced second reflection signal, the enhanced third reflection signal and the enhanced fourth reflection signal.

the present application provides in a fourth aspect an apparatus for measuring a thickness of a sample based on a spectroscopic detection system, comprising:

The acquisition module is used for acquiring time information of a reflection signal detected by the spectrum detection system after a sample to be detected in the sample bin is detected, wherein the reflection signal comprises a first reflection signal, a second reflection signal, a third reflection signal and a fourth reflection signal;

and the calculating module is used for calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal.

in an optional implementation manner, the computing module includes:

a first calculation unit, configured to calculate a first time difference between a first time when the first reflection signal is detected and a third time when the third reflection signal is detected, where the first time difference is a time period during which an incident terahertz wave is transmitted between the inner surface of the first sidewall and the first surface of the sample to be measured;

a second calculating unit, configured to calculate a second time difference between a second time when the second reflection signal is detected and a fourth time when the fourth reflection signal is detected, where the second time difference is a time period during which the incident terahertz wave is transmitted between the second surface of the sample to be measured and the inner surface of the second sidewall;

And the third calculating unit is used for calculating the thickness between the first surface and the second surface of the sample to be measured according to a preset first distance between the first side wall and the second side wall, the first time length and the second time length.

In an optional implementation manner, the obtaining module includes:

the control unit is used for controlling the displacement equipment of the sample bin to drive the sample to be detected to move in the direction perpendicular to the first side wall and the second side wall;

the acquisition unit is used for respectively acquiring the corresponding spectral information when the sample to be detected moves to different positions;

And the processing unit is used for performing signal displacement and enhancement processing on all the spectral information to respectively obtain the enhanced first reflection signal, the enhanced second reflection signal, the enhanced third reflection signal and the enhanced fourth reflection signal.

A fifth aspect of embodiments of the present application provides a processing apparatus comprising a memory, a processor and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the method for measuring a thickness of a sample as described in the third aspect above when executing the computer program.

A fourth aspect of embodiments of the present application provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, carries out the steps of the method for measuring a thickness of a sample as described in the third aspect above.

the sample cabin provided by the first aspect of the present application comprises a first side wall and a second side wall which are arranged oppositely, wherein a space between the first side wall and the second side wall is used for placing a sample to be measured; the first side wall is used for reflecting incident terahertz waves to form a first reflection signal and transmitting the terahertz waves to form a first transmission signal; the second side wall is used for totally reflecting the second transmission signal to form a second reflection signal; the second transmission signal is formed by the first transmission signal transmitting through the sample to be detected; the sample to be tested comprises a first surface and a second surface which are opposite, and the first surface and the second surface are parallel to the first side wall and the second side wall; the first transmission signal is transmitted to the first surface to be reflected to form a third reflection signal, and is transmitted to the second surface to be reflected to form a fourth reflection signal. Since the thickness between the first surface and the second surface of the sample to be measured can be calculated by using the distance between the first sidewall and the second sidewall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal, the measurement of the thickness of the sample with unknown refractive index can be realized.

the embodiments provided in the second to sixth aspects of the present application have the same advantages as the embodiments provided in the first aspect of the present application, compared with the prior art, and therefore, detailed description thereof is omitted.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.

FIG. 1 is a schematic diagram of a sample chamber provided in a first embodiment of the present application;

FIG. 2 is a spectral detection system provided in a second embodiment of the present application;

FIG. 3 is a flow chart of an implementation of a method for measuring a thickness of a sample based on a spectroscopic detection system according to a third embodiment of the present application;

FIG. 4 is a flowchart illustrating an implementation of S302 in FIG. 3;

FIG. 5 is a flowchart of an implementation of a method for measuring a thickness of a sample based on a spectroscopic detection system according to a fourth embodiment of the present application;

FIG. 6 is a schematic diagram of an apparatus for measuring the thickness of a sample based on a spectroscopic detection system as provided herein;

Fig. 7 is a schematic view of a processing apparatus provided herein.

Detailed Description

in the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

Among the methods of measuring the thickness using terahertz waves, various measurement methods have been proposed, and the most common method is the time difference method for measuring the thickness of a sample. The traditional time difference method for measuring the thickness of the sample needs to measure the time difference of the terahertz wave reflected by the received sample and also needs to know the refractive index of the sample so as to calculate the thickness of the sample. When the incident terahertz wave is weak or the terahertz wave absorbed by the sample is serious, the multi-reflected echo inside the sample can reduce the signal-to-noise ratio of the measurement signal, so that the terahertz wave which needs to be measured really is difficult to distinguish from the noise signal, and the measurement effect is influenced.

in order to realize the measurement of the thickness of a sample with unknown refractive index and reduce the influence of multiple echo signals in the sample, the terahertz wave is reflected on the inner sides of the front wall and the rear wall of the sample bin through the special structural design of the sample bin, and the thickness between the first surface and the second surface of the sample to be measured can be solved according to the distance between the first side wall and the second side wall of the sample bin and the time difference between the reflected signals. Meanwhile, the embodiment of the application also provides that the sample to be measured is controlled to move in the sample bin in the direction perpendicular to the first side wall or the second side wall of the sample bin, and then reflected terahertz waves collected in the moving process are processed, so that the signal-to-noise ratio can be effectively improved, and the thickness of the sample can be measured from weak signals. Further, according to the time delay of the terahertz wave caused by the sample to be detected, the refractive index of the sample to be detected can be calculated.

it should be noted that terahertz waves, which are electromagnetic waves, are located between millimeter waves and infrared rays and are located in the transition region from electronics to optics. Since millimeter waves and infrared rays are well known, but terahertz waves are poorly understood, and many mechanisms cannot be explained, it is also called a "terahertz gap". Due to the special position of the terahertz wave, the terahertz wave also has some unique properties such as transient property, penetrability, low energy and the like. The transient state is represented on the width of the terahertz pulse, namely the width of a single terahertz pulse is only in the picosecond order, and higher time resolution and spatial resolution can be obtained when a substance is measured; the penetration is realized by the strong penetration capability of the terahertz waves to nonpolar substances (such as electrolyte materials, plastics, cartons, cloth and the like); the low energy is realized in that single terahertz wave photon energy is only a few milli electron volts, and the internal structure of the substance cannot be damaged.

In order to explain the technical solution described in the present application, the following description will be given by way of specific examples. As shown in fig. 1, which is a schematic structural diagram of a sample chamber provided in a first embodiment of the present disclosure, as can be seen from fig. 1, a sample chamber 1 provided in the present disclosure includes a first sidewall 10 and a second sidewall 11 that are disposed opposite to each other, a space between the first sidewall 10 and the second sidewall 11 is used for placing a sample 4 to be measured, an inner surface 12 of the first sidewall 10 opposite to the second sidewall 11 is used for reflecting and transmitting incident terahertz waves, an inner surface 13 of the second sidewall 11 opposite to the first sidewall 10 is used for totally reflecting the incident terahertz waves, and both a first surface 41 and a second surface 42 of the sample 4 to be measured can reflect and transmit the incident terahertz waves. Wherein the content of the first and second substances,

the terahertz wave detector comprises a first side wall 10 for reflecting incident terahertz waves to form a first reflection signal and transmitting the terahertz waves to form a first transmission signal. Wherein the incident terahertz wave may be a terahertz wave emitted by a beam emitter.

The second side wall 11 is used for totally reflecting the second transmission terahertz wave to form a second reflection signal; the second transmission signal is formed by the first transmission signal transmitting through the sample to be measured.

it will be appreciated that in the course of making the sample thickness measurement, the sample 4 to be measured needs to be placed in advance in the space between the first side wall 10 and the second side wall 11. In addition, it is also necessary to obtain spectral information including time domain information of the first and second sidewalls 10 and 11 and reflection signals generated by the sample 4 to be measured by reflecting the incident terahertz waves, respectively.

Typically, the sample 4 to be tested comprises a first surface 10 and a second surface 11 opposite, in this example both the first surface 10 and the second surface 11 are parallel to the first side wall 10 and the second side wall 11;

the incident terahertz wave is transmitted to the first sidewall 10, a first transmission signal is formed by the first sidewall 10, the first transmission signal is transmitted to the first surface 41 of the sample 4 to be measured and reflected to form a third reflection signal, and the first transmission signal is transmitted to the second surface 42 of the sample 4 to be measured and reflected to form a fourth reflection signal.

Since the propagation speed of the terahertz wave in the air is known, and the first distance between the first side wall 10 and the second side wall 11 is a preset fixed distance, after the sample 4 to be measured is placed in the sample chamber 1, a first time length for the terahertz wave to be transmitted between the inner surface of the first side wall 10 and the first surface 41 of the sample 4 to be measured is determined according to the time domain information of the first reflection signal and the time domain information of the third reflection signal (a first time difference between the first time when the first reflection signal is detected and the third time when the third reflection signal is detected), and a second time length for the terahertz wave to be transmitted between the second surface 42 of the sample 4 to be measured and the inner surface of the second side wall 11 is determined according to the time domain information of the second reflection signal and the time domain information of the fourth reflection signal (a second time difference between the second time when the second reflection signal is detected and the fourth time when the fourth reflection signal is detected), then, the thickness of the sample 4 to be measured can be calculated according to the first distance, the first time length and the second time length.

Through the analysis, when the sample cabin structure provided by the implementation is used for measuring the thickness of the sample, the refractive index of the sample to be measured does not need to be known in advance, and the thickness of the sample with the position refractive index can be measured.

specifically, the thickness of the sample 4 to be measured can be calculated by inputting the first distance, the first time length, and the second time length into the sample thickness calculation formula.

By way of example and not limitation, the sample thickness calculation formula is:

d＝L-[(t-Δt)×c×cosα]

Wherein d is the thickness of the sample to be measured, L is the distance between the first side wall and the second side wall of the sample bin, ts is the first time length, Δ ts is the second time length, c is the transmission speed of the terahertz wave in the air, and α is the incident angle of the terahertz wave.

It should be noted that, when the sample to be measured absorbs the terahertz wave seriously, the terahertz wave in the received reflected signal is weak, and it is difficult to determine the time domain information of the terahertz wave (the time domain information is the time when the reflected signal appears in the spectrum information), and in order to solve the problem of large consumption of the terahertz wave, on the basis of the embodiment shown in fig. 1, a displacement device 14 is further disposed in the sample chamber 1, and is used for driving the sample to be measured 4 to move in a direction perpendicular to the first side wall 10 and the second side wall 11.

specifically, in the process of measuring the thickness of the sample, the displacement device 14 is controlled to drive the sample 4 to be measured to move in the direction perpendicular to the first side wall 10 and the second side wall 11, and corresponding spectrum information is obtained when the sample 4 to be measured moves to different positions.

The obtained spectral information is subjected to signal enhancement processing and signal displacement processing, so that a third reflection signal reflected by the first surface 41 of the sample 4 to be measured is enhanced, and a fourth reflection signal generated by the second surface 42 of the sample 4 to be measured is enhanced, and the problem that when the sample to be measured absorbs terahertz waves seriously, the terahertz waves are weak, and the thickness of the sample to be measured cannot be measured accurately is solved.

In an alternative implementation, as shown in fig. 2, a spectrum detection system provided in a second embodiment of the present application includes: a terahertz emitter 2, a terahertz detector 3, and a sample chamber 1 shown in fig. 1.

The terahertz transmitter 2 is used for transmitting terahertz waves to the first side wall 10 of the sample bin 1;

The terahertz wave detector 3 is configured to receive a first reflected terahertz wave reflected by the first sidewall 10, a second reflected signal reflected by the second sidewall 12, a third reflected signal reflected by the first surface 41 of the sample 4 to be measured, and a fourth reflected signal reflected by the second surface 42 of the sample 4 to be measured.

When the terahertz wave emitted by the terahertz emitter 2 is incident on the first side wall 10, reflection occurs to form a first reflection signal, and transmission occurs to form a first transmission signal. In an alternative implementation manner, in order to enable the terahertz wave to be incident to the first side wall 10, and to be reflected and transmitted, a first thin film 12 with a preset size is disposed on an inner surface of the first side wall 10 opposite to the second side wall 11, and the first thin film 12 is used for enabling the incident terahertz wave to be reflected to form a first reflection signal and enabling the incident terahertz wave to be transmitted to form a first projection signal.

in an alternative implementation manner, in order to make the terahertz wave incident on the second sidewall 12 and generate total reflection, a second thin film 13 is disposed on an inner surface of the second sidewall 12 opposite to the first sidewall 10, and the second thin film 13 is used to make a second transmitted terahertz wave generate total reflection to form a second reflection signal, where the second transmission signal is formed by the first transmission signal passing through the sample 4 to be measured.

fig. 3 is a flowchart illustrating an implementation of a method for measuring a thickness of a sample based on a spectrum detection system according to a third embodiment of the present application. The present embodiment can be implemented by hardware or software in a processing device independent of the spectrum detection system, and can also be implemented by hardware or software in the terahertz wave detector.

Specifically, as can be seen from fig. 3, the method for measuring the thickness of the sample based on the spectrum detection system provided in this embodiment includes:

S301, after a sample to be detected is detected in the sample bin, the time information of the reflection signal detected by the spectrum detection system is obtained.

Wherein the reflected signal comprises a first reflected signal, a second reflected signal, a third reflected signal, and a fourth reflected signal; when terahertz waves are incident to a first side wall of the sample bin, the terahertz waves are reflected to form a first reflection signal and transmitted to form a first transmission signal, a second reflection signal is incident to a second side wall of the sample bin from a second transmission signal and is formed by total reflection, the second transmission signal is formed by the first transmission signal penetrating through the sample to be detected, a third reflection signal is incident to a first surface of the sample to be detected from the first transmission signal and is formed by reflection, and a fourth reflection signal is incident to a second surface of the sample to be detected from the first transmission signal and is formed by reflection; the first surface and the second surface are both parallel to the first sidewall and the second sidewall.

It can be understood that, when the sample to be measured absorbs the terahertz wave seriously, the terahertz wave in the received reflection signal is weak, and the time for detecting the terahertz wave is difficult to determine, in order to solve the problem that the terahertz wave consumes greatly, in other embodiments of the present application, S301 specifically includes:

and controlling the displacement equipment of the sample bin to drive the sample to be detected to move in the direction perpendicular to the first side wall and the second side wall.

It can be understood that the displacement device is arranged in the space between the first side wall and the second side wall, and when the first side wall and the second side wall move left and right, the sample to be detected and the displacement device are fixedly connected together, and the movement of the displacement device can be controlled to drive the sample to be detected to move in the direction perpendicular to the first side wall and the second side wall.

And respectively acquiring corresponding spectral information when the sample to be detected moves to different positions.

It can be understood that when the sample to be measured moves to different positions, after the incident terahertz waves generate the reflection signals on the first surface and the second surface of the sample to be measured, the third time when the third reflection signal is detected and the fourth time when the fourth reflection information is detected are correspondingly changed, and since the position between the first sidewall and the second sidewall of the sample chamber is unchanged, the first time when the first reflection signal is detected and the second time when the second reflection signal is detected are correspondingly unchanged.

Further, signal displacement and enhancement processing are performed on all the spectral information, so that the enhanced first reflection signal, the enhanced second reflection signal, the enhanced third reflection signal and the enhanced fourth reflection signal are obtained respectively.

It can be understood that, since the relative position between the first sidewall and the second sidewall of the sample chamber is unchanged, and the relative position between the first surface and the second surface of the sample to be measured is unchanged, when the signal displacement and enhancement processing is performed on the spectral information, the first reflection signal and the second reflection signal in any spectral information are acquired, and the first reflection signal and the second reflection signal in other spectral information are superimposed on the any spectral information, so that the reflection signals at other positions are attenuated with each other, and the enhanced first reflection signal and the enhanced second reflection signal are obtained after the processing.

In the same way, an enhanced third reflected signal and fourth reflected signal may be obtained.

Respectively acquiring a first moment when the first reflection signal is detected, a second moment when the second reflection signal is detected, a third moment when the third reflection signal is detected, and a fourth moment when the fourth reflection signal is detected.

S302, calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal.

Specifically, as shown in fig. 4, it is a flowchart of a specific implementation of S302 in fig. 3. As can be seen from fig. 4, S302 includes:

S3021, calculating a first time difference between a first time at which the first reflection signal is detected and a third time at which the third reflection signal is detected, the first time difference being a first time period during which the incident terahertz wave is transmitted between the inner surface of the first sidewall and the first surface of the sample to be measured.

And S3022, calculating a second time difference between a second moment when the second reflection signal is detected and a fourth moment when the fourth reflection signal is detected, wherein the second time difference is a second time period during which the incident terahertz wave is transmitted between the second surface of the sample to be measured and the inner surface of the second side wall.

And S3023, calculating the thickness between the first surface and the second surface of the sample to be measured according to a preset first distance between the first side wall and the second side wall, the first time length and the second time length.

According to the embodiment, the sample thickness measuring method provided by the application obtains the spectrum information of the reflected terahertz waves detected by the spectrum detection system after the sample to be detected is detected in the sample bin; the spectral information comprises time domain information of reflected signals, and the reflected signals comprise a first reflected signal, a second reflected signal, a third reflected signal and a fourth reflected signal; and calculating the thickness between the first surface and the second surface of the sample to be measured according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal. Since the thickness between the first surface and the second surface of the sample to be measured is calculated according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal, the thickness of the sample with unknown refractive index can be measured.

It will be appreciated that the first distance between the first side wall and the second side wall in the sample chamber is usually preset according to an empirical value, and in practical applications, if the first distance is not determined in advance, the first distance can be measured according to the reflected signal.

Specifically, as shown in fig. 5, it is a flowchart of an implementation of the method for measuring a thickness of a sample based on a spectrum detection system according to the fourth embodiment of the present application. As can be seen from fig. 5, in this embodiment, compared with the embodiment shown in fig. 3, the implementation process of S501 is the same as the implementation process of S301, and the implementation process of S505 is the same as the implementation process of S302, except that S502 to S504 are further included before S505, it should be noted that S502 and S501 are in parallel execution relationship, and may be alternatively executed. Specifically, the specific implementation processes of S502 to S504 are detailed as follows:

s502, when it is detected that the sample to be detected does not exist in the sample bin, fifth reflection terahertz waves formed by transmitting the terahertz waves to the first side wall and reflecting the terahertz waves and sixth reflection terahertz waves formed by transmitting the terahertz waves to the second side wall and totally reflecting the terahertz waves are obtained.

it is understood that, when the sample to be measured does not exist in the sample chamber, the incident terahertz wave directly passes through the first sidewall, is reflected to form the fifth reflection signal, and after the transmission occurs, is directly incident to the second sidewall to be totally reflected to form the sixth reflection signal, so that the third time duration for transmitting the terahertz wave between the first sidewall and the second sidewall when the sample to be measured does not exist in the sample chamber can be determined according to the time instant when the fifth reflection signal is received and the time instant when the sixth reflection signal is received.

s503, calculating a third time difference between the fifth reflected signal and the sixth reflected signal.

Specifically, a third time difference between the receipt of the fifth reflection signal and the receipt of the sixth reflection signal is a third time duration of transmission between the first sidewall and the second sidewall when the terahertz wave does not exist in the sample bin.

S504, the first distance is calculated according to the third time difference, the transmission speed of the terahertz wave in the air and the incident angle of the terahertz wave.

since the speed of the terahertz wave propagating in the air is known and the incident angle of the terahertz wave is known, the first distance can be calculated according to the first time difference, the transmission speed of the terahertz wave in the air and the incident angle of the terahertz wave. Specifically, the formula for calculating the first distance is as follows:

L＝t×c×cosα

Where L is the first distance, t0 is the third time difference, c is the propagation speed of the terahertz wave in air, and α is the incident angle of the terahertz wave.

fig. 6 is a schematic view of an apparatus for measuring a thickness of a sample based on a spectrum detection system according to the present application. As can be seen from fig. 6, the apparatus 6 for measuring the thickness of a sample based on a spectrum detection system provided in the present embodiment includes:

the acquisition module 601 is configured to acquire time information of a reflection signal detected by the spectrum detection system after a sample to be detected in the sample bin is detected, where the reflection signal includes a first reflection signal, a second reflection signal, a third reflection signal, and a fourth reflection signal;

A calculating module 602, configured to calculate a thickness between the first surface and the second surface of the sample to be measured according to the distance between the first sidewall and the second sidewall, the first reflection signal, the second reflection signal, the third reflection signal, and the fourth reflection signal.

in an alternative implementation, the calculation module 602 includes:

A first calculating unit, configured to calculate a first time difference between a first time when the first reflection signal is detected and a third time when the third reflection signal is detected, where the first time difference is a first time period during which an incident terahertz wave is transmitted between the inner surface of the first sidewall and the first surface of the sample to be measured;

A second calculating unit, configured to calculate a second time difference between a second time when the second reflection signal is detected and a fourth time when the fourth reflection signal is detected, where the second time difference is a second time period during which the incident terahertz wave is transmitted between the second surface of the sample to be measured and the inner surface of the second sidewall;

And the third calculating unit is used for calculating the thickness between the first surface and the second surface of the sample to be measured according to a preset first distance between the first side wall and the second side wall, the first time length and the second time length.

In an optional implementation manner, the obtaining module 601 includes:

the control unit is used for controlling the displacement equipment of the sample bin to drive the sample to be detected to move in the direction perpendicular to the first side wall and the second side wall;

the acquisition unit is used for respectively acquiring the corresponding spectral information when the sample to be detected moves to different positions;

and the processing unit is used for performing signal displacement and enhancement processing on all the spectral information to respectively obtain the enhanced first reflection signal, the enhanced second reflection signal, the enhanced third reflection signal and the enhanced fourth reflection signal.

Fig. 7 is a schematic view of a processing apparatus provided herein. As shown in fig. 7, the processing apparatus 7 of this embodiment includes: a processor 70, a memory 71 and a computer program 72 stored in said memory 71 and executable on said processor 70, such as a program for measuring the thickness of a sample based on a spectroscopic detection system. The processor 70, when executing the computer program 72, implements the steps in each of the above-described embodiments of methods for measuring a thickness of a sample based on a spectroscopic detection system, such as steps 301 to 304 shown in fig. 3. Alternatively, the processor 70, when executing the computer program 72, implements the functions of the modules/units in the above-described embodiments of the apparatus for measuring the thickness of a sample based on a spectroscopic detection system, such as the functions of the modules 601 to 602 shown in fig. 6.

illustratively, the computer program 72 may be partitioned into one or more modules/units that are stored in the memory 71 and executed by the processor 70 to accomplish the present application. The one or more modules/units may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution of the computer program 72 in the processing device 7. For example, the computer program 72 may be divided into an acquisition module and a calculation module (a module in a virtual device), and the specific functions of each module are as follows:

The acquisition module is used for acquiring time information of a reflection signal detected by the spectrum detection system after a sample to be detected in the sample bin is detected, wherein the reflection signal comprises a first reflection signal, a second reflection signal, a third reflection signal and a fourth reflection signal;

and the calculating module is used for calculating and detecting the thickness between the first surface and the second surface of the sample to be detected according to the distance between the first side wall and the second side wall, the first reflection signal, the second reflection signal, the third reflection signal and the fourth reflection signal.

It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.

in the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.

those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

In the embodiments provided in the present application, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other ways. For example, the above-described embodiments of the apparatus/terminal device are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.

The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of communication units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

in addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.

The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow in the method of the embodiments described above can be realized by a computer program, which can be stored in a computer-readable storage medium and can realize the steps of the embodiments of the methods described above when the computer program is executed by a processor. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.

the above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.