阅读说明：本技术 载带金属线路的制作方法、载带 (Method for manufacturing carrier tape metal circuit and carrier tape ) 是由 蔡水河 陈正能 于 2021-10-12 设计创作，主要内容包括：本发明公开了一种载带金属线路的制作方法,包括以下步骤,S00：在基材膜的上表面溅射金属原子,形成种子层；S10：在种子层的上表面加工出连接层,对连接层的表面进行处理,使连接层表面粗糙度提高；S20：在连接层的上表面均匀覆上一层光刻胶,形成光刻胶层；S30：对光刻胶层依次进行曝光和显影处理,使光刻胶层之间形成沟槽；S40：在光刻胶层之间的沟槽内进行长铜处理,以形成金属线路；S50：洗去光刻胶层；S60：进行纳米微蚀刻处理,直至金属线路之间的种子层和连接层被完全蚀刻；连接层用于增加种子层与光刻胶层之间的连接强度,从而避免了在制作金属线路过程中光刻胶发生脱落或偏移。(The invention discloses a method for manufacturing a carrier tape metal circuit, which comprises the following steps of S00: sputtering metal atoms on the upper surface of the substrate film to form a seed layer; s10: processing a connecting layer on the upper surface of the seed layer, and processing the surface of the connecting layer to improve the surface roughness of the connecting layer; s20: uniformly covering a layer of photoresist on the upper surface of the connecting layer to form a photoresist layer; s30: sequentially carrying out exposure and development treatment on the photoresist layers to form grooves among the photoresist layers; s40: performing long copper treatment in the groove between the photoresist layers to form a metal circuit; s50: washing off the photoresist layer; s60: performing nano micro etching treatment until the seed layer and the connecting layer between the metal lines are completely etched; the connecting layer is used for increasing the connecting strength between the seed layer and the photoresist layer, so that the photoresist is prevented from falling off or deviating in the process of manufacturing the metal circuit.)

1. A method for manufacturing a metal circuit of a carrier tape is characterized by comprising the following steps,

s00: sputtering metal atoms on the upper surface of the base material film (1) to form a seed layer (2);

s10: processing a connecting layer (3) on the upper surface of the seed layer (2), and processing the surface of the connecting layer (3) to improve the surface roughness of the connecting layer (3);

s20: uniformly covering a layer of photoresist on the upper surface of the connecting layer (3) to form a photoresist layer (4);

s30: sequentially carrying out exposure and development treatment on the photoresist layers (4) to form grooves among the photoresist layers (4);

s40: performing long copper treatment in the groove between the photoresist layers (4) to form a metal line (5);

s50: washing off the photoresist layer (4);

s60: carrying out nano micro etching treatment until the seed layer (2) and the connecting layer (3) between the metal lines (5) are completely etched;

the connecting layer (3) is used for increasing the connecting strength between the seed layer (2) and the photoresist layer (4).

2. The method for manufacturing a metal circuit with carrier tape according to claim 1, wherein the seed layer (2) comprises a bottom layer and an upper layer, the bottom layer is made of one of tungsten, nickel, copper, vanadium, molybdenum, tin, zinc, cobalt, iron, titanium or alloy thereof, the bottom layer has a thickness of 10-30 nm, the upper layer is made of one of copper, gold, silver or alloy thereof, the upper layer has a thickness of 50-100 nm, and S00 specifically comprises: and (3) uniformly sputtering the bottom layer and the upper layer on the upper surface of the substrate film (1) by using a vacuum magnetron sputtering machine.

3. The method for manufacturing a metal circuit carrier tape according to claim 2, wherein in S10, the connection layer (3) is a metal mixture containing aluminum, and the thickness of the connection layer (3) is 50-150 nm.

4. The method for manufacturing a metal circuit carrier tape according to claim 3, wherein in step S10, the surface of the connecting layer (3) is washed away with a strong alkali solution to increase the surface roughness of the connecting layer (3).

5. The method for manufacturing metal circuit with carrier tape according to claim 1, wherein the photoresist layer (4) is a positive photoresist, and the exposure and development processes are as follows: firstly, manufacturing a light shielding film, forming a light transmitting hole on the light shielding film, enabling the light transmitting part on the light shielding film to be consistent with the shape of the metal circuit (5), placing the light transmitting film on the photoresist layer (4), and then utilizing ultraviolet light to penetrate through the light transmitting hole to carry out exposure treatment on the photoresist layer (4) so as to enable the photoresist layer (4) in the exposure area to generate chemical reaction; and washing off the photoresist layer (4) on the exposed area by using a developing solution, so that the photoresist layer (4) on the unexposed area is remained.

6. The method for manufacturing a metal circuit with carrier tape according to claim 1, wherein the photoresist layer (4) is a negative photoresist, and the exposure and development processes are as follows: firstly, manufacturing a light shielding film, forming a light transmitting hole on the light shielding film, enabling the shape of the light-tight part on the light shielding film to be consistent with that of the metal circuit (5), placing the light transmitting film on the photoresist layer (4), and then utilizing ultraviolet light to penetrate through the light transmitting hole to carry out exposure treatment on the photoresist layer (4) so as to enable the photoresist layer (4) in the exposure area to carry out chemical reaction; and washing off the photoresist layer (4) on the unexposed area by using a developing solution, so that the photoresist layer (4) on the exposed area is remained.

7. The method for manufacturing a metal circuit with carrier tape according to claim 1, wherein the operation of the long copper treatment is: and connecting the substrate film (1) with an upper cathode, and simultaneously immersing the upper surface of the substrate film (1) in a solution filled with copper ions, so that the copper ions start to deposit and form a metal line (5) in the groove between the photoresist layers (4), wherein the thickness of the metal line (5) is 8-12 microns.

8. The method for manufacturing a metal circuit carrier tape according to claim 1, wherein in S60, the thickness of the nano microetching is the sum of the thickness of the seed layer (2) and the thickness of the connection layer (3).

9. A method for making a metal circuit carrier as claimed in claim 3, characterized in that said connection layer (3) is a mixture of nickel and aluminum.

10. The method for manufacturing a metal circuit with carrier tape according to claim 9, wherein the connection layer (3) is formed by sputtering a target material, and the target material is formed by splicing an aluminum plate and other metal plates alternately or by a mixture of aluminum and other metals.

11. The method for manufacturing metal circuit carrier tape according to claim 1, wherein after S60, a tin layer (6) and an oxidation-resistant paint layer (7) are sequentially coated on the surface of the metal circuit (5).

12. A carrier tape manufactured by the method for manufacturing a metal circuit of a carrier tape according to any one of claims 1 to 11, the carrier tape comprising:

a substrate film (1);

the seed layer (2), the said seed layer (2) locates the upper surface of the said base material membrane (1);

the connecting layer (3) is arranged on the upper surface of the seed layer (2);

the metal circuit (5) is arranged on the upper surface of the connecting layer (3);

the tin layer (6), the tin layer (6) is coated on the outer surface of the seed layer (2), the connecting layer (3) and the metal circuit (5) after being stacked;

an anti-oxidation paint layer (7), wherein the anti-oxidation paint layer (7) is coated on the outer surfaces of the tin layer (6) and the base material film (1);

the upper surface of articulamentum (3) has concave-convex structure, the inside of articulamentum (3) has the hole structure, partly entering of metal circuit (5) the concave-convex structure with in the hole structure.

Technical Field

The invention belongs to the technical field of carrier band processing, and particularly relates to a method for manufacturing a carrier band metal circuit and a carrier band manufactured by the method for manufacturing the carrier band metal circuit.

Background

The FPC refers to a flexible printed circuit board which is made of a polyimide or polyester film as a base material and has high reliability and excellent flexibility. The flexible printed circuit board or FPC for short has the characteristics of high wiring density, light weight and thin thickness.

COF refers to a chip on film, which is a technology for packaging a driver IC on a flexible printed circuit board (FPC) using a flexible additional circuit board as a carrier for packaging a chip to bond the chip and a flexible substrate circuit, and COF is a highly precise one of FPCs, and usually requires exposure and development processes during the fabrication of COF, and thus, a large amount of photoresist is used. In the existing process, photoresist is usually directly added on the surface of a seed layer, and then exposure and development treatment are carried out, because the connection strength between the photoresist and the seed layer is low, the photoresist is easy to fall off or shift in position in the conveying and processing processes, so that the metal circuit manufactured subsequently does not meet the process requirements.

Disclosure of Invention

The present invention is directed to solving at least one of the problems of the prior art.

Therefore, the invention provides a method for manufacturing a carrier tape metal circuit, which has the advantages that the photoresist is firmly connected during manufacturing, and falling or deviation cannot occur.

The method for manufacturing the metal circuit with the carrier tape according to the embodiment of the invention comprises the following steps of S00: sputtering metal atoms on the upper surface of the substrate film to form a seed layer; s10: processing a connecting layer on the upper surface of the seed layer, and processing the surface of the connecting layer to improve the surface roughness of the connecting layer; s20: uniformly covering a layer of photoresist on the upper surface of the connecting layer to form a photoresist layer; s30: sequentially carrying out exposure and development treatment on the photoresist layers to form grooves among the photoresist layers; s40: performing long copper treatment in the groove between the photoresist layers to form a metal circuit; s50: washing off the photoresist layer; s60: performing nano micro etching treatment until the seed layer and the connecting layer between the metal lines are completely etched; the connecting layer is used for increasing the connecting strength between the seed layer and the photoresist layer.

According to an embodiment of the present invention, the seed layer includes a bottom layer and an upper layer, the bottom layer is made of one of tungsten, nickel, copper, vanadium, molybdenum, tin, zinc, cobalt, iron, titanium or an alloy thereof, the bottom layer has a thickness of 10-30 nm, the upper layer is made of one of copper, gold, silver or an alloy thereof, the upper layer has a thickness of 50-100 nm, and S00 specifically is: and (3) uniformly sputtering the bottom layer and the upper layer on the upper surface of the substrate film by using a vacuum magnetron sputtering machine.

According to an embodiment of the present invention, in S10, the connection layer is a metal mixture containing aluminum, and the thickness of the connection layer is 50-150 nm.

According to an embodiment of the present invention, in S10, the aluminum on the surface of the connection layer is washed away by using a strong alkali solution, so that the surface roughness of the connection layer is increased.

According to one embodiment of the present invention, the photoresist layer is a positive photoresist, and the exposure and development processes are as follows: firstly, manufacturing a light shielding film, forming a light transmitting hole on the light shielding film, enabling the light transmitting part on the light shielding film to be consistent with the shape of the metal circuit, placing the light transmitting film on the photoresist layer, and then exposing the photoresist layer by utilizing ultraviolet light to pass through the light transmitting hole so as to enable the photoresist layer in the exposure area to generate chemical reaction; and washing off the photoresist layer on the exposed area by using a developing solution, so that the photoresist layer on the unexposed area is remained.

According to an embodiment of the present invention, the photoresist layer is a negative photoresist, and the exposure and development processes are as follows: firstly, manufacturing a light shielding film, forming a light transmitting hole on the light shielding film, enabling the shape of the light-tight part on the light shielding film to be consistent with that of the metal circuit, placing the light transmitting film on the photoresist layer, and then carrying out exposure treatment on the photoresist layer by utilizing ultraviolet light to penetrate through the light transmitting hole so as to enable the photoresist layer in the exposure area to generate chemical reaction; and washing off the photoresist layer on the unexposed area by using a developing solution, so that the photoresist layer on the exposed area is remained.

According to one embodiment of the invention, the operation of the long copper process is: the substrate film is connected to the upper cathode while the upper surface of the substrate film is immersed in a solution filled with copper ions so that the copper ions start to deposit and form metal lines in the trenches between the photoresist layers, the metal lines having a thickness of 8-12 microns.

In S60, the thickness of the nano-micro etching is the sum of the thickness of the seed layer and the thickness of the connection layer.

According to one embodiment of the invention, the connection layer is a mixture of nickel and aluminum.

According to one embodiment of the invention, the connection layer is formed by sputtering a target material, wherein the target material is formed by splicing aluminum plates and other metal plates in a staggered mode or is formed by a mixture of aluminum and other metals.

According to an embodiment of the present invention, after S60, a tin layer and an oxidation-resistant paint layer are sequentially coated on the surface of the metal trace.

According to an embodiment of the present invention, a carrier tape manufactured by any one of the above methods for manufacturing a metal circuit of a carrier tape includes: a substrate film; the seed layer is arranged on the upper surface of the base material film; the connecting layer is arranged on the upper surface of the seed layer; the metal circuit is arranged on the upper surface of the connecting layer; the tin layer is coated on the outer surface of the stacked seed layer, the connecting layer and the metal circuit; the anti-oxidation paint layer is coated on the outer surfaces of the tin layer and the substrate film; the upper surface of articulamentum has concave-convex structure, the inside of articulamentum has the hole structure, partly entering of metal circuit the concave-convex structure with in the hole structure.

The method has the beneficial effects that the method is simple in process and easy to realize, the connecting layer is processed on the seed layer, and the surface of the connecting layer is processed, so that the roughness of the surface of the connecting layer is improved, the connecting strength of the photoresist layer and the connecting layer is improved, the photoresist is prevented from falling off or deviating in the process of manufacturing the metal circuit, the metal circuit can stably grow in the groove between the other part of the photoresist layer, the size of the finally manufactured metal circuit is more uniform, and the yield of the carrier tape is higher.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic flow chart of a method for manufacturing a metal circuit of a carrier tape according to an embodiment of the invention;

FIG. 2 is a schematic diagram of a photoresist layer during a process of manufacturing a metal circuit carrier tape according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of a photoresist layer during a process of manufacturing a metal circuit carrier tape according to an embodiment of the present invention;

FIG. 4 is a schematic illustration of a photoresist layer in a prior art fabrication process;

FIG. 5 is a schematic illustration of a photoresist layer in a prior art fabrication process;

reference numerals:

the substrate comprises a substrate film 1, a seed layer 2, a connecting layer 3, a photoresist layer 4, a metal circuit 5, a tin layer 6 and an anti-oxidation paint layer 7.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention. Furthermore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

The method for manufacturing a metal circuit with carrier tape according to the embodiment of the present invention is described in detail below with reference to the accompanying drawings.

As shown in fig. 1 to 5, the method for manufacturing a metal circuit of a carrier tape according to an embodiment of the present invention includes the following steps, S00: sputtering metal atoms on the upper surface of the base material film 1 to form a seed layer 2; s10: processing a connecting layer 3 on the upper surface of the seed layer 2, and processing the surface of the connecting layer 3 to improve the surface roughness of the connecting layer 3; s20: uniformly covering a layer of photoresist on the upper surface of the connecting layer 3 to form a photoresist layer 4; s30: sequentially carrying out exposure and development treatment on the photoresist layers 4 to form grooves among the photoresist layers 4; s40: performing long copper treatment in the groove between the photoresist layers 4 to form a metal line 5; s50: washing off the photoresist layer 4; s60: performing nano micro etching treatment until the seed layer 2 and the connecting layer 3 between the metal lines 5 are completely etched; the connection layer 3 serves to increase the connection strength between the seed layer 2 and the photoresist layer 4.

According to an embodiment of the present invention, the seed layer 2 includes a bottom layer and an upper layer, the bottom layer is made of one of tungsten, nickel, copper, vanadium, molybdenum, tin, zinc, cobalt, iron, titanium or an alloy thereof, the bottom layer has a thickness of 10-30 nm, the upper layer is made of one of copper, gold, silver or an alloy thereof, the upper layer has a thickness of 50-100 nm, and S00 specifically includes: and (3) uniformly sputtering the bottom layer and the upper layer on the upper surface of the substrate film 1 by using a vacuum magnetron sputtering machine. Because the base material film 1 itself does not have the ability of adhering to metal, if can drop off more easily with the direct preparation of metal circuit 5 on base material film 1, the bottom can have better bonding strength with base material film 1 compared in the upper strata, can play the effect of avoiding droing, and the upper strata has better electric conductive property, has played the effect of being convenient for make metal circuit 5.

In S10, the connection layer 3 is a metal mixture containing aluminum, and the thickness of the connection layer 3 is 50-150 nm. Further, in S10, the surface of the connecting layer 3 is washed away with a strong alkali solution, thereby increasing the surface roughness of the connecting layer 3. That is to say, the connecting layer 3 is made of a metal mixture containing aluminum, so that when the strong alkali solution is used to wash away the aluminum on the surface of the connecting layer 3, the seed layer 2, the substrate film 1 and other metals of the connecting layer 3 are not damaged, and the surface roughness of the connecting layer 3 is improved because the aluminum is washed away by the strong alkali solution, so that the bonding strength between the connecting layer 3 and the photoresist layer 4 is greatly improved.

According to one embodiment of the present invention, the photoresist layer 4 is a positive photoresist, and the exposure and development processes are: firstly, manufacturing a light shielding film, forming a light transmitting hole on the light shielding film, enabling the light transmitting part on the light shielding film to be consistent with the shape of the metal circuit 5, placing the light transmitting film on the photoresist layer 4, and then carrying out exposure treatment on the photoresist layer 4 by utilizing ultraviolet light to penetrate through the light transmitting hole so as to enable the photoresist layer 4 in the exposure area to generate chemical reaction; the photoresist layer 4 on the exposed region is washed away using a developing solution so that the photoresist layer 4 on the unexposed region is retained.

According to another embodiment of the present invention, the photoresist layer 4 is a negative photoresist, and the exposure and development processes are: firstly, manufacturing a light shielding film, forming a light transmitting hole on the light shielding film, enabling the shape of the lightproof part on the light shielding film to be consistent with that of the metal circuit 5, placing the light transmitting film on the photoresist layer 4, and then utilizing ultraviolet light to pass through the light transmitting hole to carry out exposure treatment on the photoresist layer 4 so as to enable the photoresist layer 4 in the exposure area to generate chemical reaction; the photoresist layer 4 on the unexposed area is washed away by a developing solution so that the photoresist layer 4 on the exposed area is retained.

According to one embodiment of the invention, the operation of the long copper process is: the substrate film 1 is connected to the upper cathode while the upper surface of the substrate film 1 is immersed in a solution filled with copper ions so that the copper ions start to deposit and form metal lines 5 in the trenches between the photoresist layers 4, the thickness of the metal lines 5 being 8-12 microns.

In S60, the thickness of the nano-microetching is the sum of the thickness of the seed layer 2 and the thickness of the connection layer 3. During etching, the seed layer 2 and the connecting layer 3 in other areas between the metal lines 5 on the upper surface of the substrate film 1 are all etched, so that short circuit between the lines is avoided.

According to one embodiment of the invention, the connection layer 3 is a mixture of nickel and aluminum. On one hand, nickel has better bonding strength with the substrate film 1, and on the other hand, the cost of using nickel metal is lower.

According to an embodiment of the present invention, the connection layer 3 is formed by sputtering using a target material, and the target material is formed by alternately splicing aluminum plates and other metal plates or a mixture of aluminum and other metals. That is, when the connection layer 3 is processed by sputtering, the target material used may be formed by splicing an aluminum plate and other metal plates in a staggered manner, or may be made of a mixture of aluminum and other metals, and is selected according to the actual use cost.

According to an embodiment of the present invention, after S60, it is further necessary to coat the surface of the metal wiring 5 with a tin layer 6 and an anti-oxidation paint layer 7 in sequence. Tin layer 6 and anti-oxidation paint layer 7 can improve the antioxidant property of carrier band to improve life, on the other hand, tin layer 6 can melt when metal line 5 is connected with the chip pin, thereby the chip of being convenient for links to each other with metal line 5.

The invention also provides a carrier tape manufactured by the manufacturing method of the carrier tape metal circuit, and the carrier tape comprises the following components: the tin-plated film comprises a base material film 1, a seed layer 2, a connecting layer 3, a metal circuit 5, a tin layer 6 and an anti-oxidation paint layer 7, wherein the seed layer 2 is arranged on the upper surface of the base material film 1; the connecting layer 3 is arranged on the upper surface of the seed layer 2; the metal circuit 5 is arranged on the upper surface of the connecting layer 3; the tin layer 6 is coated on the outer surface of the stacked seed layer 2, the connecting layer 3 and the metal circuit 5; the anti-oxidation paint layer 7 is coated on the outer surfaces of the tin layer 6 and the substrate film 1; the upper surface of the connecting layer 3 has a concave-convex structure, the inside of the connecting layer 3 has a hole structure, and a part of the metal circuit 5 enters the concave-convex structure and the hole structure. That is, after the connecting layer 3 is washed away with aluminum, a concave-convex structure and a hole structure are formed, so that the connecting strength with the photoresist layer 4 can be increased, and the connecting strength with the metal line 5 can be improved by mutually penetrating the connecting layer and the metal line 5.

Example 1

The manufacture is started according to the method for manufacturing the metal circuit with the carrier tape, the selected components of the connecting layer 3 are nickel and copper, and after the step of S40 is completed, the microscope is used for magnifying and observing, and as can be seen from figures 2 and 3, the other part of the photoresist layer 4 on the unexposed area still keeps a relatively stable structure.

Comparative example 1

While maintaining the same process parameters as in example 1, the fabrication was started in accordance with the fabrication method without adding the connection layer 3, and after exposure and development operations, the other portion of the photoresist layer 4 on the unexposed area was subjected to bending deformation or partial peeling as seen in fig. 4 and 5, which was observed under magnification by a microscope.

It can be seen from the comparison result between embodiment 1 and comparative example 1 that the method for manufacturing the metal circuit for the carrier tape according to the present application can significantly improve the connection strength between the photoresist layer 4 and the seed layer 2, the process of the present invention is simple and easy to implement, the connection layer 3 is processed on the seed layer 2, and the surface of the connection layer 3 is processed, so that the roughness of the surface of the connection layer 3 is improved, thereby improving the connection strength between the photoresist layer 4 and the connection layer 3, and preventing the photoresist from falling off or shifting during the process of manufacturing the metal circuit 5, so that the metal circuit 5 can stably grow in the groove between the other part of the photoresist layer 4, and the finally manufactured metal circuit 5 has a more uniform size and a higher yield of the carrier tape.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.