阅读说明：本技术 通过湿化学法选择性去除Si3N4 (Selective removal of Si3N4 by wet chemical methods ) 是由 李卫民 于 2020-02-20 设计创作，主要内容包括：公开了一种用于处理衬底的系统和一种用于处理衬底的方法。用于处理基板的系统包括被配置为接收基板的处理室,其中基板暴露于处理室中的蚀刻剂以移除基板的一部分并产生对基板的通路。蚀刻液中的副产物；副产物去除部,用于将副产物转化为沉淀物并去除沉淀物,从而去除副产物。去除副产物后,蚀刻溶液循环回到处理室。(A system for processing a substrate and a method for processing a substrate are disclosed. A system for processing a substrate includes a processing chamber configured to receive a substrate, wherein the substrate is exposed to an etchant in the processing chamber to remove a portion of the substrate and create a pathway to the substrate. Byproducts in the etching solution; and a byproduct removing part for converting the byproduct into a precipitate and removing the precipitate, thereby removing the byproduct. After removal of the byproducts, the etching solution is circulated back to the process chamber.)