阅读说明：本技术 一种界面导热材料的制备方法 (Preparation method of interface heat conduction material ) 是由 华菲 于 2021-08-10 设计创作，主要内容包括：本发明涉及一种界面导热材料的制备方法,在导热基体的一侧依次设置含镍层和导热层A,在需散热器件的一侧依次设置含镍层和导热层B,将导热层A和导热层B进行焊接；所述导热层A和B分别包括锡、锡合金、铟、铟合金、银、银合金、铜和铜合金中的1种或至少2种的组合；所述导热层A和B各自的设置方式包括物理气相沉积、电镀或化学气相沉积中的1种或至少2种的组合。本发明提供的技术方案通过预先在导热基体和需散热器件的含镍层上设置一层导热层然后进行焊接,通过预先设置的方式使得导热层和含镍层进行预结合,进而形成预结合层,使得导热材料的传热可靠性显著提高。(The invention relates to a preparation method of an interface heat conduction material, wherein a nickel-containing layer and a heat conduction layer A are sequentially arranged on one side of a heat conduction substrate, a nickel-containing layer and a heat conduction layer B are sequentially arranged on one side of a device needing heat dissipation, and the heat conduction layer A and the heat conduction layer B are welded; the heat conduction layers A and B respectively comprise 1 or at least 2 combinations of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy; the heat conduction layers A and B are respectively arranged in a mode of 1 or a combination of at least 2 of physical vapor deposition, electroplating or chemical vapor deposition. According to the technical scheme provided by the invention, the heat conduction layer is arranged on the heat conduction substrate and the nickel-containing layer of the device to be radiated in advance and then welded, and the heat conduction layer and the nickel-containing layer are combined in advance in a preset mode to form the pre-combined layer, so that the heat conduction reliability of the heat conduction material is obviously improved.)

1. A preparation method of an interface heat conduction material is characterized by comprising the following steps:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B;

the heat conducting layer A comprises 1 or a combination of at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy;

the heat conducting layer B comprises 1 or at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy

The arrangement mode of the heat conduction layer A comprises 1 or the combination of at least 2 of physical vapor deposition, electroplating or chemical vapor deposition; the arrangement mode of the heat conduction layer B comprises 1 or at least 2 combination of physical vapor deposition, electroplating or chemical vapor deposition.

2. The production method according to claim 1, wherein the thickness of the heat conductive layer a is 0.5 to 500 μm.

3. The production method according to claim 1 or 2, wherein the thickness of the heat conductive layer B is 0.5 to 500 μm.

4. The method of any one of claims 1-3, wherein the thermally conductive layer A and the thermally conductive layer B are the same material.

5. The production method according to any one of claims 1 to 4, wherein the nickel-containing layer comprises a pure nickel layer and/or a nickel alloy layer.

6. The production method according to any one of claims 1 to 5, wherein when the thickness of the heat conductive layer A is 0.5 to 10 μm and the thickness of the heat conductive layer B is 0.5 to 10 μm, the heat conductive layer C is placed between the heat conductive layer A and the heat conductive layer B and welded.

7. The method of claim 6, wherein the thermally conductive layer C comprises 1 or a combination of at least 2 of tin, a tin alloy, indium, an indium alloy, silver, a silver alloy, copper, and a copper alloy.

8. The method according to claim 6 or 7, wherein the soldering between the heat conductive layer a, the heat conductive layer B, and the heat conductive layer C includes reflow soldering.

9. The method of any one of claims 6-8, wherein the thermally conductive layer A, the thermally conductive layer B, and the thermally conductive layer C are the same material.

10. The method of any one of claims 1-9, comprising:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B;

the thickness of the heat conduction layer A is 0.5-500 μm;

the thickness of the heat conduction layer B is 0.5-500 μm;

the heat conducting layer A comprises 1 or a combination of at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy;

the heat conducting layer B comprises 1 or at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy

When the thickness of the heat conduction layer A is 0.5-10 μm and the thickness of the heat conduction layer B is 0.5-10 μm, placing the heat conduction layer C between the heat conduction layer A and the heat conduction layer B and welding;

the arrangement mode of the heat conduction layer A comprises 1 or the combination of at least 2 of physical vapor deposition, electroplating or chemical vapor deposition; the arrangement mode of the heat conduction layer B comprises 1 or at least 2 combination of physical vapor deposition, electroplating or chemical vapor deposition.

Technical Field

The invention relates to the field of heat conduction materials, in particular to a preparation method of an interface heat conduction material.

Background

Currently, heat generated by the electronic device needs to be transferred to the heat-dissipating cover through the interface heat-conducting material. The thermal conductivity of the interfacial thermally conductive material determines whether the heat generated by the electronic device can be dissipated efficiently. Metals such as indium and tin are often used as interface heat conductive materials because of their high thermal conductivity.

Currently, Au is mainly used as a wetting layer, whereas AuIn formed at the bonding site when Au is used₂The structure of the compound layer is unstable in the presence of oxygenAuIn at the interface of the heat dissipation cover and the indium layer often occurs in the process of testing the reliability of the packaged assembly₂The compound is cleaved.

For example, CN110648987A discloses an interface heat conduction material layer and its use, wherein the interface heat conduction material layer comprises an indium layer and a heat dissipation cover located at one side thereof, the surface of the heat dissipation cover contains a nickel layer, the nickel layer is connected with the indium layer, the nickel layer on the surface of the heat dissipation cover In the interface heat conduction material layer of the present invention is connected with the indium layer to form a Ni-In compound layer with higher structural stability, thereby solving the problem that the traditional interface heat conduction material layer adopts Au as a wetting layer and is welded with the indium layer to form AuIn compound layer with higher structural stability₂The compound layer is easily broken, and the reliability of the assembly assembled by the compound layer is improved.

For another example, CN104593655A discloses a method for improving an indium thermal interface material, which aims to solve the heat dissipation problem of a high-density and very-large-scale integrated circuit, and belongs to the technical field of thermal interface materials, wherein the method for improving an indium thermal interface material mainly comprises adding 50-3000ppm of gallium into pure indium during a melting process. The heat-conducting interface material obtained by the method has the advantages of no toxicity, no harm, high heat conductivity, high flexibility, easiness in installation and detachability, the surface cleanliness of the heat-conducting interface material obtained by the method reaches over 90 percent, and the oxygen content is below 25 ppm.

However, the problem of low heat transfer reliability still exists when indium is used as a medium in the prior art.

Disclosure of Invention

In view of the problems in the prior art, one of the objectives of the present invention is to solve the existing problem of low reliability of heat transfer by providing a heat conducting layer on the heat conducting substrate and the nickel-containing layer on the surface of the device to be heat-dissipated in advance and then welding the heat conducting layer.

In order to achieve the purpose, the invention adopts the following technical scheme:

the invention provides a preparation method of an interface heat conduction material, which comprises the following steps:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B;

the heat conducting layer A comprises 1 or a combination of at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy;

the heat conducting layer B comprises 1 or at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy

The arrangement mode of the heat conduction layer A comprises 1 or the combination of at least 2 of physical vapor deposition, electroplating or chemical vapor deposition; the arrangement mode of the heat conduction layer B comprises 1 or at least 2 combination of physical vapor deposition, electroplating or chemical vapor deposition.

According to the technical scheme provided by the invention, the heat conduction layer is arranged on the heat conduction substrate and the nickel-containing layer of the device to be cooled in advance and then welded, the heat conduction layer and the nickel-containing layer are combined in advance in a preset mode, and then the pre-combination layer is formed, so that the finally formed interface heat conduction material is stable in heat conduction effect, and the heat conduction reliability is obviously improved. And the method has low cost.

Preferably, the heat conducting substrate is a heat spreader, and the device requiring heat dissipation is a semiconductor chip.

Preferably, the heat conducting substrate is a heat radiator, and the device needing heat radiation is a semiconductor chip.

Preferably, the heat conducting substrate is a radiator, and the device needing heat dissipation is a soaking device.

Preferably, the heat conductive layer a is disposed by electroplating, and the heat conductive layer B is disposed by sputtering.

In the present invention, the nickel-containing layer may be a pure nickel layer, or an alloy layer containing nickel, such as a nickel-vanadium alloy.

In a preferred embodiment of the present invention, the thickness of the heat conductive layer A is 0.5 to 500. mu.m, and may be, for example, 0.5. mu.m, 1. mu.m, 5. mu.m, 10. mu.m, 50. mu.m, 100. mu.m, 200. mu.m, 300. mu.m, 400. mu.m, or 500. mu.m, but not limited to the above-mentioned values, and other values not mentioned in the above range are also applicable.

In a preferred embodiment of the present invention, the thickness of the heat conductive layer B is 0.5 to 500 μm, and may be, for example, 0.5 μm, 1 μm, 5 μm, 10 μm, 50 μm, 100 μm, 200 μm, 300 μm, 400 μm or 500 μm, but is not limited to the above-mentioned values, and other values not mentioned in the above range are also applicable.

The thickness of the heat conductive layer A is preferably 50 to 500. mu.m, and may be, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 220 μm, 240 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 360 μm, 380 μm, 400 μm, 420 μm, 440 μm, 460 μm, 480 μm or 500 μm, but is not limited to the above-mentioned values, and other values not mentioned in this range are also applicable.

The thickness of the heat conductive layer B is preferably 50 to 500. mu.m, and may be, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 220 μm, 240 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 360 μm, 380 μm, 400 μm, 420 μm, 440 μm, 460 μm, 480 μm or 500 μm, but is not limited to the above-mentioned values, and other values not mentioned in this range are also applicable.

In a preferred embodiment of the present invention, the heat conductive layer a and the heat conductive layer B are made of the same material. The heat-conducting layer A and the heat-conducting layer B are made of the same materials, so that welding is simpler and more convenient, the heat-conducting layer A and the heat-conducting layer B are made of the same materials, and the interface heat-conducting material formed after welding of the heat-conducting layer A and the heat-conducting layer B is more stable in structure, so that the heat-conducting effect is more stable, and the heat-conducting reliability is further improved.

As a preferred embodiment of the present invention, the nickel-containing layer includes a pure nickel layer and/or a nickel alloy layer.

As a preferable embodiment of the present invention, when the thickness of the heat conductive layer a is 0.5 to 10 μm and the thickness of the heat conductive layer B is 0.5 to 10 μm, the heat conductive layer C is placed between the heat conductive layer a and the heat conductive layer B and welded.

Generally, the thicker the thickness of the heat conductive layers a and B, the longer the time required for the arrangement of the heat conductive layers a and B. In the invention, the inventor finds that when the heat conduction layer C is placed between the heat conduction layer A and the heat conduction layer B, and the thickness of the heat conduction layer A is controlled to be 0.5-10 μm and the thickness of the heat conduction layer B is controlled to be 0.5-10 μm, better heat conduction stability can be obtained, the preparation time is shorter, and the cost for manufacturing a supply chain can be reduced.

In the present invention, the thickness of the heat conductive layer A is 0.5 to 10 μm, and may be, for example, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm, but is not limited to the values listed above, and other values not listed in the range are also applicable.

In the present invention, the thickness of the heat conductive layer B is 0.5 to 10 μm, and may be, for example, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm, but is not limited to the values listed above, and other values not listed in the range are also applicable.

As a preferred embodiment of the present invention, the heat conductive layer C includes 1 or a combination of at least 2 of tin, tin alloy, indium alloy, silver alloy, copper, and copper alloy.

As a preferable embodiment of the present invention, the welding method among the heat conductive layer a, the heat conductive layer B, and the heat conductive layer C includes reflow welding.

As a preferable embodiment of the present invention, the heat conductive layer a, the heat conductive layer B, and the heat conductive layer C are made of the same material.

The materials of the heat conduction layer A, the heat conduction layer B and the heat conduction layer C are the same, so that welding is simpler and more convenient, the materials of the heat conduction layer A, the heat conduction layer B and the heat conduction layer C are the same, and the structure of an interface heat conduction material formed after welding is more stable, so that the heat transfer effect is more stable, and the heat conduction reliability is further improved.

As a preferred technical solution of the present invention, the preparation method comprises:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B;

the thickness of the heat conduction layer A is 0.5-500 μm;

the thickness of the heat conduction layer B is 0.5-500 μm;

the heat conducting layer A comprises 1 or a combination of at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy;

the heat conducting layer B comprises 1 or at least 2 of tin, tin alloy, indium alloy, silver alloy, copper and copper alloy

When the thickness of the heat conduction layer A is 0.5-10 μm and the thickness of the heat conduction layer B is 0.5-10 μm, placing the heat conduction layer C between the heat conduction layer A and the heat conduction layer B and welding;

the arrangement mode of the heat conduction layer A comprises 1 or the combination of at least 2 of physical vapor deposition, electroplating or chemical vapor deposition; the arrangement mode of the heat conduction layer B comprises 1 or at least 2 combination of physical vapor deposition, electroplating or chemical vapor deposition.

Compared with the prior art, the invention at least has the following beneficial effects:

according to the technical scheme provided by the invention, the heat conduction layer is arranged on the heat conduction substrate and the nickel-containing layer of the device to be cooled in advance and then welded, the heat conduction layer and the nickel-containing layer are combined in advance in a preset mode, and then the pre-combination layer is formed, so that the finally formed interface heat conduction material is stable in heat conduction effect, and the heat conduction reliability is obviously improved.

Drawings

FIG. 1 is a schematic view showing positional relationships of layers before welding in example 1 of the present invention;

FIG. 2 is a schematic view showing positional relationships of layers before welding in example 2 of the present invention;

FIG. 3 is a schematic view showing positional relationships of layers before welding in embodiment 3 of the present invention;

fig. 4 is a schematic view of positional relationships of layers before welding in embodiment 4 of the present invention.

In the figure: 1-heat conducting substrate, 2-nickel layer, 3-heat conducting layer A, 4-heat conducting layer B, 5-heat dissipation device and 6-heat conducting layer C.

The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.

Detailed Description

To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:

example 1

The embodiment provides a preparation method of an interface heat conduction material, which comprises the following steps:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B; the positional relationship of the layers before welding is shown in FIG. 1;

the thickness of the heat conducting layer A is 100 μm.

The thickness of the heat conduction layer B is 60 mu m;

the heat conduction layer A is a tin layer;

the heat conduction layer B is an indium layer;

the nickel-containing layer is a pure nickel layer;

the heat conduction layer A and the heat conduction layer B are arranged in a sputtering mode.

And the heat conduction layer A and the heat conduction layer B are welded in a reflow soldering mode.

Example 2

The embodiment provides a preparation method of an interface heat conduction material, which comprises the following steps:

the heat conducting layer A, the heat conducting layer B and the heat conducting layer C are welded together; the positional relationship of the layers before welding is shown in FIG. 2;

the heat conduction layer A is indium;

the heat conduction layer B is indium;

the heat conducting layer C is indium;

the nickel-containing layer is a nickel-vanadium alloy layer.

The heat conducting layer A is arranged in an electroplating mode, and the heat conducting layer B is arranged in a sputtering mode.

And the heat conduction layer A, the heat conduction layer B and the heat conduction layer C are welded in a reflow soldering mode.

Example 3

The embodiment provides a preparation method of an interface heat conduction material, which comprises the following steps:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B; the positional relationship of the layers before welding is shown in FIG. 3;

the thickness of the heat conducting layer A is 500 μm.

The thickness of the heat conduction layer B is 0.5 mu m;

the heat conduction layer A is an indium layer;

the heat conduction layer B is an indium layer.

The nickel-containing layer is a pure nickel layer.

The heat conducting layer A is arranged in an electroplating mode, and the heat conducting layer B is arranged in a sputtering mode. And the heat conduction layer A and the heat conduction layer B are welded in a reflow soldering mode.

Example 4

The embodiment provides a preparation method of an interface heat conduction material, which comprises the following steps:

sequentially arranging a nickel-containing layer and a heat-conducting layer A on one side of a heat-conducting base body, sequentially arranging a nickel-containing layer and a heat-conducting layer B on one side of a device needing heat dissipation, and welding the heat-conducting layer A and the heat-conducting layer B; the positional relationship of the layers before welding is shown in fig. 4;

the thickness of the heat conducting layer A is 50 μm.

The thickness of the heat conduction layer B is 50 μm;

the heat conduction layer A is made of tin-indium alloy.

And the heat conduction layer B is made of indium tin alloy.

The nickel-containing layer is a nickel-vanadium alloy layer.

The heat conduction layer A and the heat conduction layer B are arranged in a sputtering mode.

And the heat conduction layer A and the heat conduction layer B are welded in a reflow soldering mode.

Comparative example 1

The difference from example 2 is that both the heat conductive layer a and the heat conductive layer B are Au.

Comparative example 2

The difference from embodiment 2 is that the heat conductive layer a and the heat conductive layer B are not provided in advance. Namely, a nickel-containing layer is arranged on one side of the heat-conducting base body, a nickel-containing layer is arranged on one side of the device needing heat dissipation, and the sheet heat-conducting layer A, the heat-conducting layer B and the heat-conducting layer C are placed between the heat-conducting base body and the device needing heat dissipation according to the sequence of the heat-conducting layer A, the heat-conducting layer C and the heat-conducting layer B and are subjected to reflow soldering.

Comparative example 3

The difference from embodiment 2 is that the heat conductive layer a and the heat conductive layer B are not provided in advance. Namely, a nickel-containing layer is arranged on one side of the heat-conducting base body, a nickel-containing layer is arranged on one side of the device needing heat dissipation, and the heat-conducting layer C is placed between the heat-conducting base body and the device needing heat dissipation and is subjected to reflow soldering.

The interface heat conduction materials obtained in the above examples and comparative examples were subjected to a long-term heat transfer reliability test, and the heat conduction during the process was monitored in real time.

The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.

It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.

In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.