阅读说明：本技术 一种用于气相外延反应腔结构的升降控温机构 (Lifting temperature control mechanism for vapor phase epitaxy reaction cavity structure ) 是由 张海涛 山本晓 许彬 于 2021-07-20 设计创作，主要内容包括：本发明涉及GaN制备相关技术领域,且公开了一种用于气相外延反应腔结构的升降控温机构,包括支撑基板、驱动机构和沉积基座,驱动机构的输出端与沉积基座的输入轴相连接,所述支撑基座的下方设置有定位轴承座和伺服电机,定位轴承座和伺服电机均安装在设备基座上,定位轴承座的轴承内圈安装有调节丝杆,调节丝杆上螺纹连接有滚珠螺母,滚珠螺母上环形阵列安装有垂直延伸杆,垂直延伸杆的末端与支撑基座的底部表面相连接。该用于气相外延反应腔结构的升降控温机构,区别于传统的沉积基座结构,可根据GaN晶体的生长速度来缓慢调节沉积基座的水平位置高度,从而保障GaN晶体在恒定温度环境下沉积生长,提高GaN晶体的生长质量。(The invention relates to the technical field related to GaN preparation, and discloses a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure, which comprises a supporting substrate, a driving mechanism and a deposition base, wherein the output end of the driving mechanism is connected with the input shaft of the deposition base, a positioning bearing seat and a servo motor are arranged below the supporting base, the positioning bearing seat and the servo motor are both arranged on an equipment base, an adjusting screw rod is arranged on the inner ring of a bearing of the positioning bearing seat, a ball nut is connected onto the adjusting screw rod in a threaded manner, vertical extension rods are arranged on the ball nut in an annular array manner, and the tail end of each vertical extension rod is connected with the bottom surface of the supporting base. This a lift temperature control mechanism for vapor phase epitaxy reaction chamber structure is different from traditional deposition base structure, can come the horizontal position height of slowly adjusting deposition base according to the growth rate of GaN crystal to guarantee that the GaN crystal deposits under the constant temperature environment and grows, improve the growth quality of GaN crystal.)

1. The utility model provides a lift accuse temperature mechanism for vapor phase epitaxy reaction chamber structure, includes supporting baseplate, actuating mechanism and deposition base, and actuating mechanism's output is connected its characterized in that with the input shaft of deposition base: a positioning bearing seat and a servo motor are arranged below the supporting base, the positioning bearing seat and the servo motor are both arranged on the equipment base, an adjusting screw rod is arranged on a bearing inner ring of the positioning bearing seat, a ball nut is connected to the adjusting screw rod in a threaded manner, vertical extension rods are arranged on the ball nut in an annular array manner, and the tail end of each vertical extension rod is connected with the bottom surface of the supporting base;

an output shaft of the servo motor is connected with a driving rotating shaft through a speed reducer, a driving wheel is installed on the driving rotating shaft, a driven wheel matched with the driving wheel is installed on the adjusting screw rod, and a transmission strip is connected between the driving wheel and the driven wheel in a transmission mode.

2. The elevating temperature control mechanism for the vapor phase epitaxy reaction chamber structure as claimed in claim 1, wherein: and the vertical central line of the bearing inner ring of the positioning bearing seat is coincided with the central line of the deposition base.

3. The elevating temperature control mechanism for the vapor phase epitaxy reaction chamber structure as claimed in claim 1, wherein: the adjusting screw rod adopts a screw rod with JIS grade accuracy of C3 and higher accuracy, and both ends of the thread adjusting of the adjusting screw rod are provided with limit rings.

4. The elevating temperature control mechanism for the vapor phase epitaxy reaction chamber structure as claimed in claim 1, wherein: the servo motor adopts a positive and negative rotation stepping motor with the rotating speed of 0.1-100r/min and lower rotating speed, and the speed reducer adopts a transmission ratio of 1: 1000 and reduction gears with larger transmission ratios.

5. The elevating temperature control mechanism for the vapor phase epitaxy reaction chamber structure as claimed in claim 1, wherein: an adjusting distance is reserved between the thread transmission tail end of the adjusting screw rod and the bottom surface of the supporting base, and the thread adjusting length of the adjusting screw rod is smaller than the distance between the bottom surface of the supporting base and the tail end of the adjusting screw rod.

6. The elevating temperature control mechanism for the vapor phase epitaxy reaction chamber structure as claimed in claim 1, wherein: the driving wheel and the driven wheel are synchronously driven on the same height horizontal plane through the transmission strip.

7. The elevating temperature control mechanism for the vapor phase epitaxy reaction chamber structure as claimed in claim 1, wherein: the vertical extension rod is an L-shaped support rod.

Technical Field

The invention relates to the technical field related to GaN preparation, in particular to a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure.

Background

GaN is a typical representative of third-generation wide bandgap semiconductors, has been widely used in semiconductor illumination, microwave power devices, power electronic devices, and the like, and shows great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material, and such homoepitaxy (i.e. the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film, reduce the dislocation density, prolong the service life of the device, improve the luminous efficiency and improve the working current density of the device.

The GaN semiconductor material is grown mainly by Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), and gas phase reaction (CAD). The HVPE method has very high growth speed, which can reach dozens or even hundreds of microns per hour, and is very suitable for growing thick film GaN substrates, but because of the high growth speed, the epitaxial film is easy to crack, and the uniformity is required to be improved.

The GaN preparation method adopts a vapor phase epitaxy reaction, process gas is deposited on a substrate, in order to guarantee the deposition quality of a GaN crystal, a rotating base of a reaction cavity structure performs constant-speed autorotation movement, the autorotation base plate and the revolution base plate on the rotating base are matched with each other, but the thickness of the GaN crystal is gradually increased when the GaN crystal is deposited and grown, the deposition growth temperature of an equipment reaction cavity to the GaN crystal is changed along with the increase of the thickness, and the growth quality of the GaN crystal is influenced to a certain extent, so the inventor designs a lifting temperature control mechanism for the vapor phase epitaxy reaction cavity structure, and the technical problem is solved.

Disclosure of Invention

Technical problem to be solved

Aiming at the defects of the prior art, the invention provides a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure, which solves the problem that the growth quality of a GaN crystal is influenced by the temperature change due to the increase of the thickness of the GaN crystal during deposition growth.

(II) technical scheme

In order to achieve the purpose, the invention provides the following technical scheme: a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure comprises a supporting substrate, a driving mechanism and a deposition base, wherein the output end of the driving mechanism is connected with an input shaft of the deposition base, a positioning bearing seat and a servo motor are arranged below the supporting base, the positioning bearing seat and the servo motor are both arranged on an equipment base, an adjusting screw rod is arranged on a bearing inner ring of the positioning bearing seat, a ball nut is in threaded connection with the adjusting screw rod, vertical extension rods are arranged on the ball nut in an annular array mode, and the tail end of each vertical extension rod is connected with the bottom surface of the supporting base;

an output shaft of the servo motor is connected with a driving rotating shaft through a speed reducer, a driving wheel is installed on the driving rotating shaft, a driven wheel matched with the driving wheel is installed on the adjusting screw rod, and a transmission strip is connected between the driving wheel and the driven wheel in a transmission mode.

Preferably, the vertical center line of the bearing inner ring of the positioning bearing seat is coincided with the center line of the deposition base, so that the support stability of the deposition base is improved.

Preferably, the adjusting screw rod adopts a screw rod with JIS grade accuracy of C3 and higher accuracy, and both ends of the thread adjusting of the adjusting screw rod are provided with limit rings, so that excessive displacement of the ball nut during rotation is avoided, and stable matching between structures is guaranteed.

Preferably, the servo motor adopts a forward and reverse rotation stepping motor with the rotating speed of 0.1-100r/min and lower rotating speed, and the speed reducer adopts a speed ratio of 1: 1000 and a speed reducer with a larger transmission ratio, so that the servo motor can perform speed reduction or accelerated rotation adjustment on the adjusting screw rod according to the growth speed of the GaN crystal.

Preferably, an adjusting distance is reserved between the thread transmission tail end of the adjusting screw rod and the bottom surface of the supporting base, the thread adjusting length of the adjusting screw rod is smaller than the distance between the bottom surface of the supporting base and the tail end of the adjusting screw rod, and the stability of matching activities between structures is guaranteed.

Preferably, the driving wheel and the driven wheel are synchronously driven on the horizontal plane at the same height through the transmission strip, and the transmission stability of low-speed rotation of the driven wheel is guaranteed.

Preferably, the vertical extension bar is an L-shaped support bar, and the vertical extension bar effectively supports the support substrate.

(III) advantageous effects

The invention provides a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure. The method has the following beneficial effects:

this a lift temperature control mechanism for vapor phase epitaxy reaction chamber structure, mutually support through setting up servo motor and accommodate the lead screw, servo motor's output shaft drives the initiative pivot through the reduction gear and rotates, the initiative pivot is passed through action wheel and drive strip and is driven the driving wheel and carry out the low-speed rotation, make accommodate the lead screw drive ball nut and carry out slow rising or descending activity, ball nut supports the activity to the supporting baseplate through the perpendicular extension pole, thereby reach the purpose of carrying out lift adjustment to the deposition base, be different from traditional deposition base structure, can come the horizontal position height of slowly adjusting the deposition base according to the growth rate of gaN crystal, thereby ensure that the gaN crystal is deposit under the constant temperature environment and grow, improve the growth quality of gaN crystal.

Drawings

FIG. 1 is a schematic view of the structure of the present invention.

In the figure: the device comprises a supporting substrate 1, a driving mechanism 2, a deposition base 3, a positioning bearing seat 4, an adjusting screw rod 5, a ball nut 6, a vertical extension rod 7, a servo motor 8, a driving rotating shaft 9, a driving wheel 10, a driven wheel 11, a transmission bar 12, a limiting ring 13 and a speed reducer 14.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As shown in fig. 1, the present invention provides a technical solution: a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure comprises a supporting substrate 1, a driving mechanism 2 and a deposition base 3, wherein the output end of the driving mechanism 2 is connected with the input shaft of the deposition base 3, a positioning bearing seat 4 and a servo motor 8 are arranged below the supporting base 1, the vertical central line of a bearing inner ring of the positioning bearing seat 4 is coincided with the central line of the deposition base 3, the supporting stability of the deposition base 3 is improved, the positioning bearing seat 4 and the servo motor 8 are both arranged on an equipment base, an adjusting screw 5 is arranged on the bearing inner ring of the positioning bearing seat 4, the adjusting screw 5 adopts a screw with the JIS grade precision of C3 and higher precision, two ends of a thread adjustment of the adjusting screw 5 are both provided with a limiting ring 13, the excessive displacement of the ball nut 6 during rotation is avoided, the stable matching between structures is ensured, and the ball nut 6 is in threaded connection on the adjusting screw 5, vertical extension rod 7 is installed to annular array on ball nut 6, the end of vertical extension rod 7 is connected with support base 1's bottom surface, vertical extension rod 7 is the bracing piece of L shape, vertical extension rod 7 effectively supports support substrate 1, adjusting screw 5's screw thread transmission end and support base 1's bottom surface between leave adjusting distance, adjusting screw 5's screw thread adjusting length is less than the distance between support base 1 bottom surface and the adjusting screw 5 end, guarantee the stability of cooperation activity between the structure.

An output shaft of the servo motor 8 is connected with a driving rotating shaft 9 through a speed reducer 14, the driving rotating shaft 9 is provided with a driving wheel 10, the adjusting screw rod 5 is provided with a driven wheel 11 matched with the driving wheel 10, a transmission strip 12 is connected between the driving wheel 10 and the driven wheel 11 in a transmission manner, the servo motor 8 adopts a forward and reverse rotating stepping motor with the rotating speed of 0.1-100r/min and lower rotating speed, and the speed reducer 14 adopts a transmission ratio of 1: 1000 and the speed reducer with a larger transmission ratio, so that the servo motor 8 can perform speed reduction or accelerated rotation adjustment on the adjusting screw rod 5 according to the growth speed of the GaN crystal, the driving wheel 10 and the driven wheel 11 are synchronously transmitted on the horizontal plane at the same height through the transmission strip 12, and the transmission stability of low-speed rotation of the driven wheel 11 is ensured.

The electrical components presented in this document are all electrically connected to an external master controller and the mains, and the master controller may be a conventional known device controlled by a computer or the like.

In conclusion, when the device is used, the deposition growth thickness of the GaN crystal is slowly increased, the output shaft of the servo motor 8 drives the driving rotating shaft 9 to rotate through the reducer 14, the driving rotating shaft 9 drives the driven wheel 11 to rotate at a low speed through the driving wheel 10 and the transmission strip 12, so that the adjusting screw 5 drives the ball nut 6 to slowly ascend or descend, the ball nut 6 supports the support substrate 1 through the vertical extension rod 7, the purpose of ascending and descending adjustment of the deposition base 3 is achieved, the deposition growth surface of the GaN crystal is always kept at the same temperature, and the growth quality of the GaN crystal is improved.

The control mode of the invention is automatically controlled by the controller, the control circuit of the controller can be realized by simple programming of a person skilled in the art, the supply of the power supply also belongs to the common knowledge in the field, and the invention is mainly used for protecting mechanical devices, so the control mode and the circuit connection are not explained in detail in the invention.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a reference structure" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.