阅读说明：本技术 光电模块 (Optoelectronic module ) 是由 亚历山大.比奇 博扬.泰沙诺比 王吉 余启川 于 2020-03-27 设计创作，主要内容包括：公开一种光电模块,包括：光电装置,可操作以发射或检测辐射的波长；光学元件,被设置在该光电装置上,该光学元件对于能够通过该光电装置来发射或检测的该辐射的波长为透明的；以及壁,被配置为侧向地围住该光电装置与该光学元件,该壁对于能够通过该光电装置来发射或检测的该辐射的波长为不透明的。(Disclosed is an optoelectronic module comprising: an optoelectronic device operable to emit or detect a wavelength of radiation; an optical element disposed on the optoelectronic device, the optical element being transparent to a wavelength of the radiation that can be emitted or detected by the optoelectronic device; and a wall configured to laterally enclose the optoelectronic device and the optical element, the wall being opaque to a wavelength of the radiation that can be emitted or detected by the optoelectronic device.)

1. An optoelectronic module comprising:

an optoelectronic device operable to emit or detect a wavelength of radiation;

an optical element disposed on the optoelectronic device, the optical element being transparent to a wavelength of the radiation that can be emitted or detected by the optoelectronic device; and

a wall configured to laterally enclose the optoelectronic device and the optical element, the wall being opaque to a wavelength of the radiation that can be emitted or detected by the optoelectronic device.

2. The optoelectronic module of claim 1 wherein the optical element is formed from a curable material and/or the wall is formed from another curable material.

3. The optoelectronic module according to claim 1 or 2, comprising a connection element for electrically connecting at least a part of the optoelectronic device to a substrate, and wherein at least a part of the connection element extends through the optical element and/or at least a part of the wall.

4. The optoelectronic module of any preceding claim including a plurality of connection elements for electrically connecting the optoelectronic device to a substrate, the optical element being disposed on a first surface of the optoelectronic device and at least one of the plurality of connection elements being disposed on a second surface of the optoelectronic device, the first surface of the optoelectronic device being opposite the second surface of the optoelectronic device.

5. The optoelectronic module of any preceding claim wherein the optoelectronic device includes a side surface and the wall is configured to contact the side surface.

6. The optoelectronic module of claim 5 wherein the optical element is configured to extend laterally beyond at least a portion or all of the side surface of the optoelectronic device.

7. The optoelectronic module of any preceding claim wherein an interface between the optical element and the wall comprises a curved shape.

8. The optoelectronic module of any preceding claim comprising:

at least two optoelectronic devices operable to emit or detect wavelengths of said radiation; and

at least two optical elements, each optical element disposed on each of the at least two optoelectronic devices.

9. The optoelectronic module of claim 8 wherein at least one of the at least two optoelectronic devices is operable to emit a wavelength of the radiation and at least another of the at least two optoelectronic devices is operable to detect a wavelength of the radiation.

10. The optoelectronic module of claim 8 or 9 wherein the wall is configured to laterally enclose each of the at least two optoelectronic devices and each of the at least two optical elements.

11. The optoelectronic module of any one of claims 8 to 10 wherein the walls are configured to optically separate the at least two optoelectronic devices from each other and/or the at least two optical elements from each other.

12. The optoelectronic module of any one of claims 8 to 11 wherein each of the at least two optoelectronic devices includes a side surface and the wall is configured to contact the side surface of each of the at least two optoelectronic devices.

13. The optoelectronic module of claim 12 wherein at least one of the at least two optical elements is configured to extend laterally beyond at least a portion or all of the side surface of at least one of the at least two optoelectronic devices.

14. A method of manufacturing a photovoltaic module, the method comprising:

forming an optical element on an optoelectronic device, wherein the optoelectronic device is operable to emit or detect a wavelength of radiation and the optical element is transparent to the wavelength of the radiation; and

forming a wall to laterally enclose the optoelectronic device and the optical element, wherein the wall is opaque to a wavelength of the radiation that can be emitted or detected by the optoelectronic device.

15. The method of claim 14, wherein forming the optical element comprises depositing a curable material on the optoelectronic device and hardening the curable material.

16. The method of claim 15, wherein the step of forming the optical element comprises using a replication tool.

17. The method of claim 16, wherein the step of forming the optical element comprises selecting the amount of curable material and/or the shape of the replication tool such that the optical element extends beyond at least a portion or all of a side surface of the optoelectronic device.

18. A method according to any one of claims 14 to 17, wherein the step of forming the wall comprises laterally enclosing the optoelectronic device and the optical element with a further curable material and hardening the further curable material.

19. The method of claim 18, wherein the step of forming the walls comprises depositing the additional curable material on side surfaces of the optoelectronic device such that the additional curable material contacts the side surfaces of the optoelectronic device.

20. The method according to any one of claims 14 to 19, wherein the method comprises:

forming at least two optical elements, each of the at least two optical elements formed on each of at least two optoelectronic devices, each of the at least two optoelectronic devices operable to emit or detect a wavelength of the radiation and each of the at least two optical elements transparent to the wavelength of the radiation; and

the wall is formed to laterally enclose each of the at least two optoelectronic devices and each of the at least two optical elements.

21. The method of claim 20, wherein the step of forming the wall comprises forming the wall such that the wall optically separates the at least two optoelectronic devices from each other and/or such that the wall optically separates the at least two optical elements from each other.

22. A device comprising an optoelectronic module according to any one of claims 1-13, wherein the device is at least one of: portable computing devices, cellular telephones, cameras, image recording devices; and/or a video recording device.

Technical Field

The present disclosure relates to optoelectronic modules, associated devices and methods.

Background

Optoelectronic modules including one or more optoelectronic devices, such as optical sensors and/or emitters, may be integrated, for example, into various types of consumer electronics and other devices, such as mobile phones, smart phones, Personal Digital Assistants (PDAs), tablet computers, and laptop computers, as well as other electronic devices, such as bio devices (bio devices), mobile robots, surveillance cameras, and so forth.

Devices, such as smartphones, may provide a variety of different optical functions, such as one-dimensional (1D) or three-dimensional (3D) gesture detection, 3D imaging, time-of-flight (or proximity) detection, ambient light sensing, and/or front-facing (front-facing) two-dimensional (2D) camera imaging. For example, optical proximity detection may be based on emitted light that is reflected by one or more objects in the scene. The reflected light may be detected by an optical sensor and photo-generated electrons (photoelectrons) may be analyzed to determine, for example, whether an object is present in the vicinity.

There appears to be a continuing need in the industry to improve various aspects of such photovoltaic modules. For example, space in a device to design a photovoltaic module is often at a premium. Therefore, it would be desirable for the photovoltaic module to be as compact and/or have as small a footprint (footprint) as practical.

Disclosure of Invention

The present disclosure relates generally to an optoelectronic module, associated apparatus and methods. An optical element (transparent to the wavelength of the radiation) is disposed on the optoelectronic device. The optoelectronic device is operable to emit or detect a wavelength of the radiation. The optical element and the optoelectronic device are laterally enclosed by a wall that is opaque to the wavelength of radiation that can be emitted or detected by the optoelectronic device.

According to a first aspect of the present disclosure, there is provided an optoelectronic module comprising: an optoelectronic device operable to emit or detect a wavelength of radiation; an optical element disposed on the optoelectronic device, the optical element being transparent to a wavelength of the radiation that can be emitted or detected by the optoelectronic device; and a wall configured to laterally enclose the optoelectronic device and the optical element, the wall being opaque to a wavelength of the radiation that can be emitted or detected by the optoelectronic device.

By configuring the walls to laterally enclose the optoelectronic device and the optical element, the footprint of the optoelectronic module may be reduced and/or the optoelectronic module may be more compact. The reduced footprint of the optoelectronic module may facilitate integration of the optoelectronic module in another device or apparatus.

Furthermore, the wall is opaque to the wavelength of radiation that can be emitted or detected by the optoelectronic device. In this manner, the walls may optically isolate the optoelectronic device and the optical element from other optoelectronic devices, e.g., capable of emitting or detecting wavelengths of the radiation and/or facilitating processing of the optoelectronic device.

By configuring the walls to laterally enclose the optoelectronic device and the optical element, the cost of facilitating and/or manufacturing the optoelectronic module may be reduced. This may be due to the reduction of some manufacturing steps and/or some materials used to manufacture the photovoltaic module.

The optical element may be formed from or consist of a curable material. The wall may be formed from or consist of another curable material.

The optoelectronic module may comprise a connection element for electrically connecting the optoelectronic device to the substrate. The connecting element may connect at least a portion of the optoelectronic device to the substrate. At least a portion of the connecting element may extend through at least a portion of the optical element and/or the wall.

In some embodiments, the optical element may be disposed on the first surface of the optoelectronic device. The connection element may be disposed on the second surface of the optoelectronic device. The first surface of the optoelectronic device may be opposite the second surface of the optoelectronic device. In some embodiments, the optoelectronic module may include a plurality of connection elements.

The optoelectronic device may include a side surface. The wall may be configured to contact (e.g., directly contact) the side surface. The optical element may be configured to extend laterally beyond at least a portion or all of a side surface of the optoelectronic device. The interface between the optical element and the wall may comprise a curved, angled, straight, perpendicular, stepped, elliptical or other contoured shape.

The optoelectronic module may include at least two optoelectronic devices operable to emit or detect radiation at a wavelength. The optoelectronic module may comprise at least two optical elements. The or each optical element may be provided on at least one or each of the at least two optoelectronic devices. At least one of the at least two optoelectronic devices may be operable to emit a wavelength of the radiation. At least one other of the at least two optoelectronic devices may be operable to detect a wavelength of the radiation.

The wall may be configured to laterally enclose each of the at least two optoelectronic devices and each of the at least two optical elements. The wall may be configured to optically separate or isolate the at least two optoelectronic devices from each other. The wall may be configured to optically separate or isolate the at least two optical elements from each other.

Each of the at least two optoelectronic devices may include a side surface. The wall may be configured to contact (e.g., directly contact) a side surface of each of the at least two optoelectronic devices.

At least one of the at least two optical elements may be configured to extend laterally beyond at least a portion or all of a side surface of at least one of the at least two optoelectronic devices.

According to a second aspect of the present disclosure there is provided a method of manufacturing a photovoltaic module, the method comprising forming an optical element on a photovoltaic device, wherein the photovoltaic device is operable to emit or detect a wavelength of radiation and the optical element is transparent to the wavelength of the radiation, and forming a wall to laterally enclose the photovoltaic device and the optical element, wherein the wall is opaque to the wavelength of radiation capable of being emitted or detected by the photovoltaic device.

The step of forming the optical element may comprise depositing a curable material on the optoelectronic device. The step of forming the optical element may comprise hardening or curing the curable material. The step of forming the optical element may comprise using a replication tool. The step of forming the optical element may comprise selecting the amount of curable material and/or the shape of the replication tool such that, for example, the optical element extends beyond at least a part or all of at least a side surface of the optoelectronic device.

The step of forming the wall may comprise laterally enclosing the optoelectronic device and the optical element with a further curable material. The step of forming the wall may comprise hardening or curing the further curable material. The step of forming the walls may comprise depositing the further curable material on the side surfaces of the optoelectronic device such that, for example, the further curable material contacts (e.g. directly contacts) the side surfaces of the optoelectronic device.

The step of forming the optical element may be carried out before or after the step of forming the wall. In some embodiments, the step of forming the optical element and the step of forming the wall may be performed sequentially or in parallel.

The method may include forming at least two optical elements. Each of the at least two optical elements may be formed on each of the at least two optoelectronic devices. Each of the at least two optoelectronic devices may be operable to emit or detect a wavelength of the radiation. Each of the at least two optoelectronic elements may be transparent to a wavelength of the radiation. The method may include forming the wall to laterally enclose each of the at least two optoelectronic devices and/or each of the at least two optical elements.

The step of forming the wall may include forming the wall such that the wall optically separates or isolates the at least two optoelectronic devices from each other. The step of forming the wall may comprise forming the wall such that the wall optically separates or isolates the at least two optical elements from each other.

According to a third aspect of the present disclosure, there is provided a device comprising an optoelectronic module according to the first aspect, wherein the device is at least one of: portable computing devices, cellular telephones, cameras, image recording devices; and/or a video recording device or the like.

According to a fourth aspect of the present disclosure, there is provided an apparatus comprising a first optoelectronic die operable to emit or detect a wavelength of light, a first hole on the first optoelectronic die, the first hole being comprised of a first epoxy material that is transparent to the wavelength of light, a second epoxy material laterally surrounding the first hole and the first optoelectronic die, the second epoxy material contacting a sidewall of the first optoelectronic die, a wire bond attached to the first optoelectronic die and at least partially encapsulated by the first epoxy material or the second epoxy material.

The first epoxy material may extend laterally beyond at least one sidewall of the first optoelectronic die. No first epoxy material may be present on the sidewalls of the first optoelectronic die.

The first optoelectronic die may be operable to emit a wavelength of the light. The apparatus may further include or include a second optoelectronic die operable to detect the wavelength of the light and a second aperture on the second optoelectronic die. The second hole may be comprised of the first epoxy material. The second epoxy material may laterally surround the second hole and the second optoelectronic die. The second epoxy material may contact sidewalls of the second optoelectronic die. The second epoxy material may optically separate the first and second optoelectronic dies from each other. The second epoxy material may optically separate the first and second apertures from each other.

The first epoxy material may extend laterally beyond at least one sidewall of the first optoelectronic die or the second optoelectronic die.

The interface between at least one of the first or second holes and the second epoxy material may be curved. The interface between at least one of the first or second holes and the second epoxy material may be elliptical.

The apparatus may further include or include a wire bond attached to the second optoelectronic die. The wire bond may be at least partially encapsulated by the first epoxy material or the second epoxy material. The wire bond may be at least partially encapsulated by the first epoxy material.

According to a fifth aspect, there is provided a method comprising depositing a first epoxy material on a light emitting surface of a first optoelectronic die and on a light receiving surface of a second optoelectronic die, wherein the first optoelectronic die is operable to emit a wavelength of light and the second optoelectronic die is operable to detect the wavelength of light; curing the first epoxy material to form respective holes on the first and second optoelectronic dies, wherein the cured first epoxy material is transparent to the wavelength of the light; subsequently providing a second epoxy material in the spacers laterally surrounding the first and second holes and the first and second optoelectronic dies, the second epoxy material contacting sidewalls of the first and second optoelectronic dies; optically separating the first and second optoelectronic dies from each other and the first and second holes from each other, wherein at least one wire bond attached to the first optoelectronic die or the second optoelectronic die is at least partially encapsulated by the first epoxy material or the second epoxy material.

The method may include depositing a first epoxy material on a light emitting surface of a first optoelectronic die and on a light receiving surface of a second optoelectronic die using a replication tool. The first epoxy material may form a meniscus (meniscus) that restricts the flow of the first epoxy material prior to curing the first epoxy material.

The first epoxy material may extend laterally beyond at least one sidewall of the first or second optoelectronic die without flowing down the sidewalls of the first and second optoelectronic dies.

Various aspects and features of the disclosure set forth above or below may be combined with various other aspects and features of the disclosure, as will be apparent to those skilled in the art.

Drawings

Some preferred embodiments of the present disclosure will now be described, by way of example, with reference to the following drawings, in which:

fig. 1 illustrates an example photovoltaic module according to this disclosure;

FIG. 2 illustrates another example photovoltaic module;

FIG. 3 illustrates another example photovoltaic module;

FIG. 4 illustrates another example photovoltaic module;

FIG. 5 illustrates an example flow chart outlining steps of a method of fabricating the optoelectronic module in any of FIGS. 1-4;

FIG. 6 illustrates an example process flow that may be used to form an optical element on an optoelectronic device;

FIG. 7 illustrates another example process flow that may be used to form an optical element on an optoelectronic device; and

fig. 8 illustrates an example flow that may be used to form a wall of the photovoltaic module of fig. 3 or 4.

Detailed Description

Fig. 1 illustrates an example photovoltaic module 100. The optoelectronic module 100 includes an optoelectronic device 102 operable to emit or detect a wavelength of radiation. For example, the optoelectronic device 102 may be provided in the form of an emitter, such as a Light Emitting Diode (LED), an Infrared (IR) LED, an organic LED (oled), a laser diode, an Infrared (IR) laser, a Vertical Cavity Surface Emitting Laser (VCSEL), or the like. The emitter may be configured to emit radiation having a wavelength in, for example, the visible spectrum or the infrared spectrum. The emitter may comprise or be formed of a semiconductor material, such as silicon or the like, or a compound semiconductor material, such as gallium arsenide (GaAs), indium arsenide (InAs), and/or the like.

In some embodiments, the optoelectronic device 102 may be provided in the form of a detector or sensor, such as a photodetector, photodiode, image sensor (e.g., a Complementary Metal Oxide Semiconductor (CMOS) sensor or a Charge Coupled Device (CCD)), photomultiplier tube, single photon avalanche diode, or the like. The detector may comprise a plurality of radiation sensitive elements, for example a plurality of pixels. The radiation-sensitive elements may be arranged, for example, spatially distributed to form an array. The detector may be configured to detect or sense radiation having a wavelength in, for example, the visible spectrum or the infrared spectrum. It should be understood that the detector or sensor may include logic and/or electronics for reading and/or processing one or more signals from the detector. The pixels, logic and/or electronic elements may be implemented, for example, in an integrated chip or device, such as an integrated semiconductor chip or the like.

The optoelectronic module 100 includes an optical element 104 disposed on an optoelectronic device 102. The optical element 104 may be disposed on a portion or all of a first surface 102a (e.g., a top surface) of the optoelectronic device 102. The first surface 102a of the optoelectronic device 102 can define a radiation emitting or radiation receiving surface. In this embodiment, the optical elements 104 are disposed on all of the first surfaces 102a of the optoelectronic devices 102.

The optical element 104 is transparent (e.g., substantially transparent) to wavelengths of radiation that can be emitted or detected by the optoelectronic device 102. For example, the optical element 104 may be transparent to radiation having a wavelength or range of wavelengths in the visible and/or near infrared spectrum. The optical element 104 may have a flat surface 104a, such as a flat top surface. The optical element 104 may be configured to limit the maximum size of the beam of radiation that may pass into or out of the optoelectronic device 102. In the embodiment shown in fig. 1, the optical element 104 is provided in the form of a hole. It will be appreciated that in other embodiments the optical elements may be provided in the form of lenses, for example convex or concave lenses, or in the form of lens arrays (for example microlens arrays). In embodiments where the optical elements are provided in the form of lenses or lens arrays, at least a portion or all of the surface (e.g., top surface) of the optical elements may be shaped or curved.

The optical element 104 may be formed from a curable material, such as a polymeric material. In this embodiment, the curable material comprises a first epoxy material, such as a transparent epoxy material. However, it should be understood that in other embodiments, the curable material may comprise another polymeric material, such as an acrylate, a perfluoropolyether (PFPE), or another curable material.

The photovoltaic module 100 includes a wall 106. The wall 106 is configured to laterally enclose the optoelectronic device 102 and the optical element 104. In other words, the wall 106 may be arranged to laterally surround the optoelectronic device 102 and the optical element 104. The wall 106 is opaque to the wavelength of radiation that can be emitted or detected by the optoelectronic device. For example, the wall 106 may be configured to absorb radiation having a wavelength or range of wavelengths in the visible spectrum and/or the near infrared spectrum. The wall 106 may be formed of another curable material, such as a polymeric material. In this embodiment, the additional curable material includes a second epoxy material, such as a black and/or opaque epoxy material. However, it should be understood that in other embodiments, the curable material may comprise another polymeric material, such as an acrylate, a perfluoropolyether (PFPE), or another curable material.

By configuring the walls 106 to laterally enclose the optoelectronic device 102 and the optical element 104, the footprint of the optoelectronic module may be reduced and/or the optoelectronic module 100 may be more compact. The reduced footprint of the optoelectronic module 100 may facilitate integration of the optoelectronic module 100 in another device or apparatus. Furthermore, the wall 106 is opaque to the wavelength of radiation that can be emitted or detected by the optoelectronic device 102. In this manner, the wall 106 may, for example, optically isolate the optoelectronic device 102 and the optical element 104 from other optoelectronic devices that are capable of emitting or detecting the wavelength of radiation and/or facilitating processing of the optoelectronic device 102. By configuring the walls 106 to laterally enclose the optoelectronic device 102 and the optical element 104, manufacturing of the optoelectronic module 100 may be facilitated and/or costs for manufacturing the optoelectronic module 100 may be reduced. This may be due to a reduction in some manufacturing steps and/or some materials used to manufacture the photovoltaic module 100.

The optoelectronic device 102 may include a side surface 108 a. Side surface 108a may be defined by one or more sidewalls 108b of optoelectronic device 102. The wall 106 is configured to contact (e.g., directly contact) the side surface 108a (e.g., the side wall 108 b).

As can be seen from fig. 1, the optical element 104 is configured to extend laterally beyond at least a portion or all of the side surface 108a of the optoelectronic device 102. In other words, the optical element 104 may be configured to extend laterally beyond at least a portion or all of the sidewall 108b of the optoelectronic device 102. In still other words, the optical element 104 may include one or more portions 104b that may extend beyond a vertical plane VP (shown in phantom in fig. 1) of some or all of the sidewalls 108b of the optoelectronic device 102. The portion 104b of the optical element 104 that extends beyond the vertical plane VP of some or all of the sidewalls 108b may be referred to as a "yards". It should be understood that, at least in this embodiment, no portion of the optical element 104 extends along the side surface 108a (e.g., sidewall 108b) of the optoelectronic device 102. However, in other embodiments, a portion of the optical element 104 may extend at least partially along the side surface 108 a.

As can be seen from fig. 1, the interface 110 between the optical element 104 and the wall 106 may comprise a curved or elliptical shape. It should be understood that in other embodiments, the interface between the optical element and the wall may comprise an angled, straight, vertical, stepped, or other contoured shape.

The optoelectronic module 100 may include one or more connection elements 112, such as a flexible cable, a Printed Circuit Board (PCB), a ceramic or lead frame, or the like, for electrically connecting the optoelectronic device 102 to the substrate 114. In this embodiment, the connection elements 112 are provided in the form of solder balls or solder bumps.

The substrate 114 may include one or more additional connecting elements 114 a. The further connection elements 114a may be provided in the form of conductive pads or plates or the like. The further connection element 114a may comprise a metal or metal alloy, such as copper, aluminum, silver, gold or the like. The further connection element 114a may be configured for electrically connecting the optoelectronic device 102 to the substrate 114, for example via the connection element 112. The connection elements 112 may be arranged such that each connection element 112 contacts a respective further connection element 114 a.

The gaps 116 between each connecting element 112 and/or additional connecting elements 114 may be filled with an underfill material. The underfill material may comprise a polymeric material. The polymer material may comprise silicon or silicon dioxide (silica) particles, for example, to compensate for different thermal expansion coefficients between the optoelectronic device 102, the connection element 112 and/or the further connection element 114 a.

The optical element 104 may be disposed on the first surface 102a of the optoelectronic device 102 and the connection element 112 may be disposed on the second surface 102b of the optoelectronic device 102. The first surface of the optoelectronic device 102 may be opposite the second surface of the optoelectronic device 102. As described above, the first surface 102a includes the top surface of the optoelectronic device 102. The second surface 102b includes a bottom surface of the optoelectronic device 102.

The photovoltaic module 100 may include a coating 117. A coating may be disposed on the wall 106 (e.g., a surface or top surface 106a thereof) and the optical element 104. In other words, the coating 117 may extend across the upper surface 101 of the photovoltaic module 100, as shown in fig. 1. The coating may be configured to filter or block radiation having a wavelength different from the wavelength of radiation that can be emitted or detected by the optoelectronic device 102. In some embodiments, the coating may be configured to filter or block a portion of the radiation that can be emitted or detected by the optoelectronic device. In such embodiments, the coating may extend only over a portion of the wall and/or optical element 104. In such embodiments, the coating may act as or serve as the aperture. It should be understood that in other embodiments, the coating may extend over only a portion or all of the optical element. While coating 117 is shown only in fig. 1, it is to be understood that any of the photovoltaic modules described herein may include a coating.

The optoelectronic module 100 can include one or more baffle elements 115. The baffle element 115 may be part of the wall 106 or included in the wall 106. The baffle element 115 may be configured to extend beyond the surface 104a of the optical element 104. The baffle element 115 may be configured to optically isolate (e.g., further optically isolate) the optoelectronic device 102 and the optical element 104 from other optoelectronic devices capable of emitting or detecting wavelengths of radiation, for example.

Fig. 2 shows another example photovoltaic module 200. The photovoltaic module 200 shown in fig. 2 is similar to the photovoltaic module shown in fig. 1. Any of the features described with respect to the optoelectronic module 100 in fig. 1 may also be applied to the optoelectronic module 200 shown in fig. 2. Only the differences between the optoelectronic modules 100,200 shown in fig. 1 and 2 will be described below.

The optoelectronic module 200 may include a connection element 212 for electrically connecting at least a portion of the optoelectronic device 202 to a substrate 214. For example, the connection element 212 may be configured to connect at least one electrode of the optoelectronic device 202 to the substrate 214. In this embodiment, the connecting element 212 may be provided in the form of a wire bond. At least a portion of the connecting element 212 extends through at least a portion of the optical element 104. The optical element 204 may encase and/or protect the portion of the connecting element 212. It should be understood that in other embodiments, a portion of the connecting element may additionally or alternatively extend through at least a portion of the wall. The optical element 204 and/or the wall 206 may encase and/or protect the portion of the connecting element 212. The thickness T of the optical element 204 may be selected to avoid damage to the connection element 212, for example, during the manufacture of the optoelectronic module 200. For example, as shown in FIG. 2, the optical element 204 can have a thickness dA in the plane of the uppermost portion of the connection element 212.

The substrate 214 may comprise a first further connection element 214b for electrically connecting the connection element 212 to the substrate 214. The substrate 214 may comprise a second further connection element 214c for connecting another part of the optoelectronic device 202 to the substrate 214. For example, the further connection element 214c may be configured to connect at least one other electrode of the optoelectronic device 202 to the substrate 214. The first and second further connection elements 214b, 214c may each be provided in the form of a conductive pad or plate. The first and second further connection elements 214b, 214c may each comprise a metal or metal alloy, such as copper, aluminum, silver, gold or the like.

The bonding layer 218 may be provided between the optoelectronic device 202 and the second further connection element 214c of the substrate 214. The bonding layer 218 may be configured to bond or connect the optoelectronic device 202 to the second further connection element 214c of the substrate 214. The bonding layer 218 may include a conductive material. The conductive material may comprise a conductive polymer material, such as a conductive epoxy or the like.

Fig. 3 shows another example photovoltaic module 300. The optoelectronic module 300 includes at least two optoelectronic devices 302c, 302d operable to emit or detect wavelengths of radiation. The optoelectronic module 300 includes at least two optical elements 304c,304 d. Each optical element 304c,304d is disposed on one of the at least two optoelectronic devices 302c, 302d, respectively.

The optoelectronic module 300 may be considered to include a first sub-module 300a and a second sub-module 300 b. The first sub-module 300a may be provided in the form of the optoelectronic module 100 shown in fig. 1. The second sub-module 300b may be provided in the form of the optoelectronic module 200 shown in fig. 2. In this manner, any of the features described above with respect to fig. 1 and 2 may also be applied to the optoelectronic module 300 shown in fig. 3, such as the first and second sub-modules 300a, 300 b.

At least one of the at least two optoelectronic devices 302c, 302d is operable to emit a wavelength of the radiation and at least another of the at least two optoelectronic devices 302c, 302d is operable to detect the wavelength of the radiation. For example, in this embodiment, the optoelectronic device 302c of the first sub-module 300a is provided in the form of a detector or sensor. The optoelectronic device 302d of the second sub-module 300b is provided in the form of a transmitter. In this manner, the optoelectronic module 300 can be considered to include a radiation detection channel 320 and a radiation emission channel 322. For example, when the optoelectronic module described herein is used as part of a proximity sensor, radiation emitted by the emitter may be directed out of the second sub-module 300b and, if reflected by an object back into the radiation detection channel 320, may be sensed or detected by the detector of the first sub-module 300 a.

The wall 306 is configured to laterally enclose each of the two optoelectronic devices 302c, 302d and each of the two optical elements 304c,304 d. The wall 306 is configured to optically separate or isolate the two optoelectronic devices 302c, 302d from each other. The walls are additionally configured to optically separate or isolate the two optical elements 304c,304d from each other. For example, the inner portion 306a of the wall 306 provides optical isolation between the first and second sub-modules 300a, 300b (e.g., the radiation detection channel 320 and the radiation emission channel 322). As shown in fig. 3, the interior portion 306a of the wall 306 completely fills the space between the two optoelectronic devices 302c, 302d and the two optical elements 304c,304 d.

Each of the two optoelectronic devices 302c, 302d includes a side surface 308 a. Wall 306 is configured to contact (e.g., directly contact) a side surface 308a of each of the two optoelectronic devices 302c, 302 d. In other words, wall 306 laterally surrounds each of the two optoelectronic devices 302c, 302d and contacts (e.g., directly contacts) one or more sidewalls 308b of each of the two optoelectronic devices 302c, 302 d.

At least one of the two optical elements 304c,304d may be configured to extend laterally beyond at least a portion or all of the side surface 308a of at least one of the two optoelectronic devices 302c, 302 d. In the embodiment shown in fig. 3, each of the two optical elements 304c,304d extends laterally beyond the side surface 308a of each of the two optoelectronic devices 302c, 302 d. As described above, each of the two optical elements 304c,304d may include one or more portions 304b that may extend beyond the vertical plane VP (which is represented in dashed lines in fig. 3) of some or all of the sidewalls 308b of each of the two optoelectronic devices 302c, 302 d.

Fig. 4 shows another example photovoltaic module 400. The photovoltaic module shown in fig. 4 is similar to the photovoltaic module shown in fig. 3. Any of the features described with respect to the optoelectronic module 300 in fig. 3 may also be applied to the optoelectronic module 400 shown in fig. 4. Only the differences between the optoelectronic modules 300,400 shown in fig. 3 and 4, respectively, will be described below.

As described above, the optoelectronic module 400 may include connection elements 412a,412b for electrically connecting at least a portion of each of the two optoelectronic devices 402c, 402d to the substrate 414. A portion of each of the two optoelectronic devices 402c, 402d may include at least one electrode of each of the two optoelectronic devices 402c, 402 d. In this embodiment, each connecting element 412a,412b is provided in the form of a wire bond.

At least a portion of each connecting element 412a,412b extends through at least a portion of each of the two optical elements 404c,404 d. Each of the two optical elements 404c,404d may encase and/or protect a portion of each connecting element 412a,412 b. It is understood that a portion of each connecting element 412a,412b may additionally extend through at least a portion of the wall 406. Each of the two optical elements 404c,404d and/or the wall 406 may encase and/or protect the portion of each connecting element 412a,412 b. The thickness T of each of the two optical elements 404c,404d may be selected to avoid damage to each connecting element 412a,412b, for example during fabrication of the optoelectronic module 400. For example, as shown in fig. 4, the optical element 404c of the first sub-module 400a may have a thickness dB in the plane of the uppermost portion of the connection element 412a and the optical element 404d of the second sub-module 400b may have a thickness dA in the plane of the uppermost portion of the connection element 412 b.

Although not shown in fig. 4, it is to be understood that another portion (e.g., at least one other electrode) of each of the two optoelectronic devices may be electrically connected to the substrate, for example using respective further connection elements and/or respective bonding layers, as described above with respect to fig. 2.

Fig. 5 shows an example flow chart outlining the steps of a method 500 of manufacturing an optoelectronic module. At step 502, the method includes forming an optical element on an optoelectronic device. The optoelectronic device is operable to emit or detect a wavelength of radiation. The optical element is transparent to the wavelength of radiation that can be emitted or detected by the optoelectronic device. As mentioned above, the optoelectronic device may be provided in the form of an emitter, a detector or a sensor.

At step 504, the method includes forming a wall to laterally enclose the optoelectronic device and the optical element. The wall is opaque to the wavelength of radiation that can be emitted or detected by the optoelectronic device.

Step 502 of method 500 will be described below with reference to fig. 6 and 7. Fig. 6 and 7 each illustrate an example flow that may be used to form an optical element on an optoelectronic device.

The step of forming the optical element (502) may include depositing a curable material 624 on the optoelectronic device 602. The curable material may be deposited on at least a portion or all of the optoelectronic device (e.g., the first surface 602a thereof). The curable material 624 may be formed on the optoelectronic device 602 using a replication tool 626 (e.g., a mold or the like). For example, the curable material 624 may be deposited on a surface 628 (e.g., a molding surface) of a replication tool 626, such as by spraying or needle dispensing (needle dispensing), or through the surface 628. The amount of curable material 624 and/or the shape of replication tool 626 (e.g., the shape of surface 628) may be selected such that the optical element (not shown in fig. 6) to be formed extends beyond at least a portion or all of side surface 608a of optoelectronic device 602. The curable material 624 may extend beyond some or all of the side surface 608a of the optoelectronic device 602, for example, due to capillary forces between the curable material 624 and the replication tool 626.

The surface 628 of the replication tool may comprise or consist of, for example, Polydimethylsiloxane (PDMS), stainless steel or glass. After or before depositing the curable material 624 on the surface 628, the replication tool 626 may be moved towards the first surface 602a of the optoelectronic device 602, for example to press the curable material 624 onto the optoelectronic device 602, for example onto at least a part or all of its first surface 602 a. In the embodiment shown in fig. 6, the curable material 624 is deposited on all of the first surface 602a of the optoelectronic device 602.

As described above, the amount of curable material 624 and/or the shape of surface 628 of replication tool 626 may be selected to control the flow of curable material 624 in a predefined manner. For example, as shown in fig. 6, in some cases, curable material 624 may form a meniscus such that at least a portion of the optical element to be formed extends beyond side surface 608a of optoelectronic device 602. The portion of the optical element to be formed may have or define a curved or elliptical profile at the first location 630A.

In other cases, the shape of the surface 628 and/or the amount of curable material 624 of the replication tool 626 may be selected such that the boundary of the portion of the formed optical element extends to another location, such as the second location 630B or the third location 630C. One or more other parameters of the method (e.g., step 502) may be selected such that curable material 624 coats a portion of connecting element 612, which in this embodiment is provided in the form of a wire bond.

By forming a portion of the optical element to extend beyond the side surface 608a of the optoelectronic device 602, handling for different tolerances in the dimensions of the optoelectronic device may be facilitated. The methods disclosed herein may also prevent curable material 624 from flowing down side surface 608a of optoelectronic device 602. In examples where the optoelectronic module includes at least two optoelectronic devices as described above, this may be desirable to help prevent or limit cross talk (crosstalk) between the first and second sub-modules.

Referring to FIG. 7, replication tool 726 may have a plurality of elements 732 on surface 728 that may face, in use, optoelectronic device 702. The element 732 may be configured to restrict or control the flow of the curable material 724. In the embodiment shown in fig. 7, curable material 724 forms a meniscus at location 730D such that it does not encapsulate any portion of connecting element 712. In other words, the optical element may be formed on a portion of the optoelectronic device 702 (e.g., a portion of the first surface 702a thereof). The connecting element 712 may be disposed on another portion of the optoelectronic device 702 (e.g., another portion of the first surface 702a thereof) and may be spaced apart from the curable material 724.

In this embodiment, the connecting element may be coated with a further curable material immediately, for example during the formation of the wall, as described below. In other words, the connecting element 712 may extend through at least a portion of the wall.

For example, immediately after the curable materials 624,724 are deposited on the optoelectronic devices 602,702, the curable materials 624,724 may be hardened, for example, using thermal treatment and/or UV curing. This may lead to the formation of an optical element, as described above.

The method 500 may include forming at least two optical elements. Each of the two optical elements may be formed on each of the at least two optoelectronic devices. It is to be understood that any of the steps described above may be used to form two optical elements.

Step 504 of method 500 shown in FIG. 5 will be described below with reference to FIG. 8. Fig. 8 illustrates an example flow that may be used to form a wall of a photovoltaic module. Fig. 8 shows two optoelectronic devices 802c,802d, which are arranged spaced apart from one another. Optical elements 804c,804d are formed on each of the two optoelectronic devices 802c,802d, respectively. It is understood that the two optoelectronic devices 802c,802d may be electrically connected to the substrate 814, for example, prior to the step of forming the walls (504).

The walls may be formed to laterally enclose each of the two optoelectronic devices 802c,802d and each of the two optical elements 804c,804 d. A support member 834 may be provided on both optical elements 804c,804 d. A spacer 836a may extend between the two optoelectronic devices 802c,802d and the two optical elements 804c,804 d. One or more additional spacers 836b may extend between the support member 834 and the substrate 814. A spacer 836a and a further spacer 836b may laterally surround each optoelectronic device 802c,802d and each optical element 804c,804 d. The spacer 836a and the additional spacer 836b may be injected or filled with additional curable material. The spacers 836a between the two optoelectronic devices 802c,802d and the two optical elements 804c,804d may be filled or injected with additional curable material to form an interior portion of the wall. The walls may be formed such that the walls optically separate or isolate the two optoelectronic devices 802c,802d from each other and such that the walls optically separate or isolate the two optical elements 804c,804d from each other. The additional curable material may be injected into the spacers 836a and the additional spacers 836b using a Vacuum Injection Molding (VIM) process or an injection molding process or the like.

For example, immediately after injecting the additional curable material into the spacers 836a and the additional spacers 836b, the additional curable material may harden, for example, using thermal treatment and/or UV curing. This may result in the formation of a wall, as described above.

The support member 834 may be configured to mold at least a portion of the further curable material. For example, the method 500 may include forming one or more baffle elements. The baffle elements may be formed to extend beyond the surface 804a of each optical element 804c,804 d. The support member 834 may be configured to allow formation of one or more baffle elements. For example, the support member 834 may be shaped such that a portion of the further curable material extends beyond the surface 804a of each optical element 804c,804d, for example when the further curable material is filled or injected into the spacer 834a or the further spacer 834 b.

It should be understood that in some embodiments, an optoelectronic module includes a single optoelectronic device and a single optical element. Any of the method steps described above may be used to form a photovoltaic module. For example, in such embodiments, the step of forming the walls (504) may include laterally enclosing the optoelectronic device and the optical element with additional curable material. The additional curable material may be deposited on the side surfaces of the optoelectronic device such that the additional curable material contacts the side surfaces of the optoelectronic device. The optoelectronic device and the optical element may be laterally enclosed by the further curable material, for example by injecting or filling the further curable material into one or more spacers between the support member and the substrate.

Any of the steps of method 500 may be performed as part of a wafer-level process in which multiple (e.g., tens, hundreds, or even thousands) photovoltaic modules are formed or processed concurrently in parallel.

Any of the optoelectronic modules described above may be integrated into at least one of the devices described below: portable computing devices, cellular telephones, cameras, image recording devices; and/or a video recording device. For example, any of the optoelectronic modules described above may be part of or included in a sensor or module of a device, such as a proximity sensor, a time-of-flight sensor, a distance sensor, a spectral sensor, an optical module, such as a data communication (datacom) module, or other sensor or module.

The substrates 114,214,314,414,814 may be electrically connected to other components within the device. The device may include one or more processors, one or more memories (e.g., RAM), storage (e.g., disk or flash), a user interface (which may include, for example, a keypad, a TFT LCD or OLED display, a touch or other gesture sensor, a camera or other optical sensor, a compass sensor, a 3D magnetometer, a 3-axis accelerometer, a 3-axis gyroscope, one or more microphones, etc., and software instructions for providing a graphical user interface), interconnections between these elements (e.g., a bus), and interfaces to communicate with other devices (which may be wireless (e.g., GSM, 3G, 4G, CDMA, WiFi, WiMax, Zigbee, or Bluetooth) and/or wired (e.g., through an ethernet local area network, T-1 internet connection, etc.).

The control and processing circuitry (e.g., electronic control circuitry) of the optoelectronic module may be implemented as, for example, one or more integrated circuits in one or more semiconductor chips with appropriate digital logic and/or other hardware components (e.g., read-out registers, amplifiers, analog-to-digital converters, clock drivers, timing logic, signal processing circuitry, and/or microprocessors). The control and processing circuitry (and associated memory) may reside in the same semiconductor chip as the detector or in one or more other semiconductor chips. In some cases, the control and processing circuitry may be external to the module; for example, for devices in which the optoelectronic module is disposed, the control and processing circuitry may be integrated into the processor.

Reference numerals:

100,200,300,400 photovoltaic module

101 upper surface of photovoltaic module

300a,400a first submodule

300b,400b second sub-module

102,202,302c,302d,402c,402d,

602,702,802c,802d optoelectronic device

102a,202a,602a,702a first surface of an optoelectronic device

102b second surface of the optoelectronic device

104,204,304c,304d,404c,404d optical element

104a,204a,702a optical element

104b,204b,304b,404b,804c,804d, and a method of manufacturing the same

106,206,306,406 wall

306a,406a wall

106a wall surface

108a,208a,308a,408a,608a side surfaces of the optoelectronic device

108b,208b,308b,408b,608b sidewalls of the optoelectronic device

110 mating surface

112,212,312,412a,412b,612,712 connecting element

114,214,314,414,814 base plate

114a further connecting element

214b first further connecting element

214c second further connecting element

115 baffle element

117 coating

218 bonding layer

320 radiation detection channel

322 radiation emission channel

502,504 method steps

624,724 curable material

630A,630B,630B,730D position

628,728 replication tool

732 element

834 support member

836a spacer

836b additional spacers

Thickness of T

VP vertical plane

It is to be understood that the term "detector or sensor" may be considered to include the term "receiver or light receiver". These terms may be used interchangeably.

It should be understood that the terms "radiation" and "light" may be used interchangeably.

The term "optoelectronic device" can be considered to include the term "optoelectronic die". The terms "optoelectronic device" and "optoelectronic die" may be used interchangeably.

It should be understood that one or more steps of the above-described methods and/or process flows may be combined or used separately.

It should be understood that references to features may be used interchangeably with references to the singular form of these features (e.g., "at least one" and/or "each"). The singular forms of features (e.g., "at least one" or "each") may be used interchangeably.

Those skilled in the art will appreciate that in the foregoing description and in the appended claims, positional terms such as "on … …", "overlapping", "under … …", "sideways", and the like, are made with reference to conceptual views of the device, such as those showing standard cross-sectional perspectives and the figures shown in the drawings. These terms are used for ease of reference, but are not limiting. Accordingly, these terms should be understood to refer to the device as oriented in the figures.

While the present disclosure has been described in terms of the above embodiments, it is to be understood that these embodiments are illustrative only and that the claims are not limited to these embodiments. Those skilled in the art will be able to make modifications and alterations in view of the disclosure, which are intended to fall within the scope of the appended claims. Each feature disclosed or illustrated in this specification may be incorporated in the disclosure, either alone or in any suitable combination with any other feature disclosed or illustrated herein.