阅读说明：本技术 一种异质结太阳能电池及其制作方法、异质结光伏组件 (Heterojunction solar cell, manufacturing method thereof and heterojunction photovoltaic module ) 是由 钱洪强 张树德 符欣 连维飞 于 2021-08-17 设计创作，主要内容包括：本申请公开了一种异质结太阳能电池及其制作方法、异质结光伏组件,包括获得正面和背面均沉积有非晶硅膜层的硅片；在位于正面的非晶硅膜层的表面沉积TCO膜层；将硅片翻转180度,并在位于背面的非晶硅膜层的沿表面边缘覆盖掩膜；掩膜的宽度在0.05mm～0.5mm之间,包括端点值；在覆盖有掩膜的非晶硅膜层的表面沉积TCO膜层；在位于正面和所述背面的TCO膜层的表面制作电极,得到异质结太阳能电池。本申请先在位于正面的非晶硅膜层的表面沉积TCO膜层,然后翻转硅片,在位于背面的非晶硅膜层的表面覆盖掩膜,掩膜的宽度在0.05mm～0.5mm之间,掩膜遮挡宽度变窄,增加背面TCO膜层的面积,提升电池的效率。(The application discloses a heterojunction solar cell, a manufacturing method thereof and a heterojunction photovoltaic module, which comprises the steps of obtaining a silicon wafer with an amorphous silicon film layer deposited on the front surface and the back surface; depositing a TCO film layer on the surface of the amorphous silicon film layer positioned on the front surface; turning the silicon wafer for 180 degrees, and covering a mask on the edge of the amorphous silicon film layer on the back along the surface; the width of the mask is between 0.05mm and 0.5mm, including end point values; depositing a TCO film on the surface of the amorphous silicon film covered with the mask; and manufacturing electrodes on the surfaces of the TCO film layers on the front surface and the back surface to obtain the heterojunction solar cell. According to the method, the TCO film layer is deposited on the surface of the amorphous silicon film layer positioned on the front side, then the silicon wafer is turned, the mask covers the surface of the amorphous silicon film layer positioned on the back side, the width of the mask is 0.05-0.5 mm, the shielding width of the mask is narrowed, the area of the TCO film layer on the back side is increased, and the efficiency of the battery is improved.)

1. A method for manufacturing a heterojunction solar cell is characterized by comprising the following steps:

obtaining a silicon wafer with an amorphous silicon film layer deposited on the front surface and the back surface;

depositing a TCO film layer on the surface of the amorphous silicon film layer on the front surface;

turning the silicon wafer for 180 degrees, and covering a mask on the surface of the amorphous silicon film layer on the back along the edge; wherein the width of the mask is between 0.05mm and 0.5mm, including end point values;

depositing a TCO film on the surface of the amorphous silicon film covered with the mask;

and respectively manufacturing electrodes on the surfaces of the TCO film layers on the front surface and the back surface to obtain the heterojunction solar cell.

2. The method of fabricating a heterojunction solar cell of claim 1, wherein before said obtaining a silicon wafer having an amorphous silicon film layer deposited on both the front and back surfaces, further comprising:

obtaining the silicon wafer;

depositing intrinsic amorphous silicon film layers on the front side and the back side of the silicon wafer respectively;

depositing a p-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the front surface;

and depositing an n-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the back surface.

3. The method of fabricating a heterojunction solar cell of claim 2, further comprising, after said obtaining said silicon wafer:

and carrying out double-sided texturing treatment on the silicon wafer.

4. The method for fabricating a heterojunction solar cell according to any of claims 1 to 3, wherein after the fabricating electrodes on the surfaces of the TCO film layers respectively on the front surface and the back surface, the method further comprises:

and (5) performing an EL test and an IV curve test, and screening out unqualified heterojunction solar cells.

5. A heterojunction solar cell, wherein the heterojunction solar cell is manufactured by the method for manufacturing the heterojunction solar cell according to any one of claims 1 to 4.

6. A heterojunction photovoltaic module is characterized by comprising a first substrate, a first adhesive film layer, a battery layer, a second adhesive film layer and a second substrate which are sequentially stacked from bottom to top, wherein the battery layer comprises a plurality of heterojunction solar cells as claimed in claim 5.

7. The heterojunction photovoltaic module of claim 6, wherein said first glue layer and said second glue layer are both EVA glue layers.

8. The heterojunction photovoltaic module of claim 6, wherein said first glue layer is a subfissure resistant glue layer.

9. The heterojunction photovoltaic device of claim 6, wherein said first substrate is a glass substrate.

10. A heterojunction photovoltaic module according to any of claims 6 to 9, wherein the side of said second substrate is a slope inclined toward said cell layer.

Technical Field

The application relates to the technical field of photovoltaics, in particular to a heterojunction solar cell, a manufacturing method of the heterojunction solar cell and a heterojunction photovoltaic module.

Background

The heterojunction solar cell has a double-sided symmetrical structure and an excellent passivation effect of an amorphous silicon layer, has the characteristics of high conversion efficiency, high double-sided rate and the like, and becomes a hotspot of industrial research.

Both the front side and the back side of the heterojunction solar cell are provided with TCO (transparent conductive oxide) film layers, Physical Vapor Deposition (PVD) is adopted for Deposition when the TCO film layers are prepared at present, a silicon wafer is placed in a pit of a hollow-out support plate, the hollow-out support plate is placed in PVD equipment, and the PVD equipment is used for carrying out TCO film coating on the front side and the back side at one time. Because the silicon chip is placed in the pit of the carrier plate, the edges of the four sides of the back of the silicon chip are shielded by about 0.6mm and do not have the TCO film layer, according to the calculation, about 1.4% of amorphous silicon film layer is not covered by the TCO film layer, so that the generated photon-generated carriers can not be effectively led out, and the efficiency loss of the theoretical calculation is about 0.34%.

Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.

Disclosure of Invention

The application aims to provide a heterojunction solar cell, a manufacturing method thereof and a heterojunction photovoltaic module so as to improve the efficiency of the heterojunction solar cell.

In order to solve the above technical problem, the present application provides a method for manufacturing a heterojunction solar cell, including:

obtaining a silicon wafer with an amorphous silicon film layer deposited on the front surface and the back surface;

depositing a TCO film layer on the surface of the amorphous silicon film layer on the front surface;

turning the silicon wafer for 180 degrees, and covering a mask on the surface of the amorphous silicon film layer on the back along the edge; wherein the width of the mask is between 0.05mm and 0.5mm, including end point values;

depositing a TCO film on the surface of the amorphous silicon film covered with the mask;

and respectively manufacturing electrodes on the surfaces of the TCO film layers on the front surface and the back surface to obtain the heterojunction solar cell.

Optionally, before obtaining the silicon wafer with the front surface and the back surface both deposited with the amorphous silicon film layer, the method further includes:

obtaining the silicon wafer;

depositing intrinsic amorphous silicon film layers on the front side and the back side of the silicon wafer respectively;

depositing a p-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the front surface;

and depositing an n-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the back surface.

Optionally, after the obtaining the silicon wafer, the method further includes:

and carrying out double-sided texturing treatment on the silicon wafer.

Optionally, after the electrodes are respectively fabricated on the surfaces of the TCO film layers on the front surface and the back surface, the method further includes:

and (5) performing an EL test and an IV curve test, and screening out unqualified heterojunction solar cells.

The application further provides a heterojunction solar cell which is manufactured by adopting any one of the above heterojunction solar cell manufacturing methods.

The application also provides a heterojunction photovoltaic module, include by lower supreme first base plate, first glued membrane layer, battery layer, second glued membrane layer, the second base plate that stacks gradually, wherein, the battery layer includes the multi-disc above-mentioned heterojunction solar cell.

Optionally, the first adhesive film layer and the second adhesive film layer are both EVA adhesive film layers.

Optionally, the first adhesive film layer is an anti-subfissure adhesive film layer.

Optionally, the first substrate is a glass substrate.

Optionally, the side surface of the second substrate is an inclined surface inclined toward the battery layer.

The application provides a heterojunction solar cell manufacturing method, which comprises the following steps: obtaining a silicon wafer with an amorphous silicon film layer deposited on the front surface and the back surface; depositing a TCO film layer on the surface of the amorphous silicon film layer on the front surface; turning the silicon wafer for 180 degrees, and covering a mask on the surface of the amorphous silicon film layer on the back along the edge; wherein the width of the mask is between 0.05mm and 0.5mm, including end point values; depositing a TCO film on the surface of the amorphous silicon film covered with the mask; and respectively manufacturing electrodes on the surfaces of the TCO film layers on the front surface and the back surface to obtain the heterojunction solar cell.

Therefore, according to the heterojunction solar cell manufacturing method, after the silicon wafer with the front surface and the back surface both deposited with the amorphous silicon film layers is obtained, the TCO film layer is firstly deposited on the surface of the amorphous silicon film layer positioned on the front surface, then the silicon wafer is turned over to enable the back surface of the silicon wafer to face upwards, the mask is covered on the surface of the amorphous silicon film layer positioned on the back surface along the edge, the TCO film layer is deposited on the surface of the amorphous silicon film layer positioned on the back surface, and finally the electrode is prepared, the shielding of the mask realizes the electrical isolation of the front surface and the back TCO film layer, meanwhile, the symmetry and the appearance of the heterojunction solar cell are good, in addition, the width of the mask is 0.05 mm-0.5 mm, the shielding width of the back surface amorphous silicon film layer is narrowed, the area of the TCO film layer positioned on the back surface is increased, and the efficiency of the heterojunction solar cell is improved.

In addition, the application also provides a heterojunction solar cell manufacturing method and a heterojunction photovoltaic module with the advantages.

Drawings

For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a flowchart of a method for fabricating a heterojunction solar cell according to an embodiment of the present disclosure;

FIG. 2 is a top view of an embodiment of the present disclosure after being covered with a mask;

fig. 3 is a flowchart of another method for fabricating a heterojunction solar cell according to an embodiment of the present application;

fig. 4 is a schematic structural diagram of a heterojunction solar cell provided in the present application;

fig. 5 is a schematic structural diagram of a heterojunction photovoltaic device provided in the present application.

Detailed Description

In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.

As described in the background section, deposition is currently performed by physical vapor deposition during preparation of a TCO film, a silicon wafer is placed in a pit of a hollow support plate, the hollow support plate is placed in PVD equipment, and the PVD equipment performs TCO coating on the front and back surfaces at one time. Because the silicon chip is placed in the pit of the carrier plate, the edges of the four sides of the back of the silicon chip are shielded by about 0.6mm and do not have the TCO film layer, according to the calculation, about 1.4% of amorphous silicon film layer is not covered by the TCO film layer, so that the generated photon-generated carriers can not be effectively led out, and the efficiency loss of the theoretical calculation is about 0.34%.

The TCO film layer mainly comprises oxides of In, Sb, Zn and Cd and a composite multi-element oxide film material thereof.

In view of the above, the present application provides a method for fabricating a heterojunction solar cell, please refer to fig. 1, where fig. 1 is a flowchart of a method for fabricating a heterojunction solar cell according to an embodiment of the present application, and the method includes:

step S101: and obtaining the silicon wafer with the front surface and the back surface both deposited with the amorphous silicon film layer.

It should be noted that the front surface of the silicon wafer is a light-facing surface, and the back surface of the silicon wafer is a backlight surface.

The silicon wafer is generally an N-type silicon wafer, and at this time, the front amorphous silicon film layer includes a stacked intrinsic amorphous silicon film layer and a p-type amorphous silicon film layer, and the back amorphous silicon film layer includes a stacked intrinsic amorphous silicon film layer and an N-type amorphous silicon film layer.

Step S102: and depositing a TCO film layer on the surface of the amorphous silicon film layer on the front surface.

It should be noted that in this step, the TCO film is deposited only on the surface of the front amorphous silicon film. The TCO film layer on the surface of the amorphous silicon film layer on the front surface can be deposited by adopting a physical vapor deposition mode.

Step S103: turning the silicon wafer for 180 degrees, and covering a mask on the surface of the amorphous silicon film layer on the back along the edge; wherein the width of the mask is between 0.05mm and 0.5mm, inclusive.

When the mask is covered, precise alignment needs to be performed, the outer edge of the mask 15 coincides with the edge of the amorphous silicon film layer (i.e., the n-type amorphous silicon film layer 7), and the top view after the mask is covered is shown in fig. 2.

The mask acts as a physical barrier and does not need to be removed. The material of the mask is not particularly limited in this application, as long as the mask can play a role in isolation, and for example, hard materials such as stainless steel can be used.

It should be noted that the width of the mask is not specifically limited in this application, and may be set by itself. For example, the width of the mask may be 0.08mm, 0.1mm, 0.15mm, 0.20mm, 0.25mm, 0.28mm, 0.30mm, 0.34mm, 0.37mm, 0.4mm, 0.45mm, 0.48mm, and so forth.

For a 158.75mm silicon wafer, the width of the mask may be 0.1mm, that is, the distance between the two opposite masks is 158.55 mm; when the side length of the silicon wafer is increased, for example, the side length of the silicon wafer is 166mm and 210mm, the width of the mask can be increased correspondingly. When the side length of the silicon wafer is 158.75mm and the width of the mask is 0.1mm, the efficiency of the heterojunction solar cell can be improved by about 0.3 percent compared with the efficiency of the heterojunction solar cell manufactured by the prior related technology.

And (4) turning the silicon wafer for 180 degrees, wherein in the step S102, the front side of the silicon wafer faces upwards, and the back side of the turned silicon wafer faces upwards. In order to improve the efficiency, a mechanical transmission device is used for overturning the silicon wafer. Of course, the turning may also be performed manually, and is not particularly limited in this application.

Step S104: and depositing a TCO film on the surface of the amorphous silicon film covered with the mask.

The TCO film layer in the step can be deposited by adopting a physical vapor deposition mode.

Step S105: and respectively manufacturing electrodes on the surfaces of the TCO film layers on the front surface and the back surface to obtain the heterojunction solar cell.

The front electrode and the back electrode can both adopt silver electrodes, and the electrodes can be printed in a screen printing mode and cured.

According to the heterojunction solar cell manufacturing method, after the silicon wafer with the front surface and the back surface both deposited with the amorphous silicon film layer is obtained, the TCO film layer is deposited on the surface of the amorphous silicon film layer located on the front surface, then the silicon wafer is turned over to enable the back surface of the silicon wafer to face upwards, the mask covers the surface of the amorphous silicon film layer located on the back surface along the edge, the TCO film layer is deposited on the surface of the amorphous silicon film layer located on the back surface, the electrode is finally prepared, the shielding of the mask achieves electrical isolation of the front surface and the back surface TCO film layer, meanwhile, the symmetry and the appearance of the heterojunction solar cell are good, the width of the mask is 0.05-0.5 mm, the shielding width of the back surface amorphous silicon film layer is narrowed, the area of the TCO film layer located on the back surface is increased, and therefore the efficiency of the heterojunction solar cell is improved.

On the basis of the foregoing embodiment, in an embodiment of the present application, before obtaining a silicon wafer with an amorphous silicon film layer deposited on both the front side and the back side, the method further includes:

obtaining the silicon wafer;

depositing intrinsic amorphous silicon film layers on the front side and the back side of the silicon wafer respectively;

depositing a p-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the front surface;

and depositing an n-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the back surface.

The method for depositing the intrinsic amorphous silicon film layer is not particularly limited and can be selected by self. For example, the intrinsic amorphous silicon film layer may be formed by physical vapor deposition, or plasma enhanced chemical vapor deposition.

The p-type amorphous silicon film layer and the n-type amorphous silicon film layer are respectively formed by depositing an intrinsic amorphous silicon film layer and then doping the intrinsic amorphous silicon film layer to obtain the corresponding p-type amorphous silicon film layer and the corresponding n-type amorphous silicon film layer. The doping method is not particularly limited in this application, and for example, the doping method may be a diffusion method or an ion implantation method.

In order to improve the photoelectric conversion efficiency of the heterojunction solar cell, on the basis of the above embodiments, in an embodiment of the present application, after the obtaining the silicon wafer, the method further includes:

and carrying out double-sided texturing treatment on the silicon wafer.

It should be noted that after double-sided texturing, the silicon wafer needs to be cleaned to remove oil stains and impurities on the surface of the silicon wafer, and then the subsequent processes are performed.

Referring to fig. 3, fig. 3 is a flowchart illustrating another method for fabricating a heterojunction solar cell according to an embodiment of the present disclosure.

Step S201: and obtaining the silicon wafer.

Step S202: and carrying out double-sided texturing treatment on the silicon wafer.

Step S203: and depositing intrinsic amorphous silicon film layers on the front surface and the back surface of the silicon wafer respectively.

Step S204: and depositing a p-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the front surface.

Step S205: and depositing an n-type amorphous silicon film layer on the surface of the amorphous silicon film layer on the back surface.

Step S206: and depositing a TCO film layer on the surface of the amorphous silicon film layer on the front surface.

Step S207: turning the silicon wafer for 180 degrees, and covering a mask on the surface of the amorphous silicon film layer on the back along the edge; wherein the width of the mask is between 0.05mm and 0.5mm, inclusive.

Step S208: and depositing a TCO film on the surface of the amorphous silicon film covered with the mask.

Step S209: and respectively manufacturing electrodes on the surfaces of the TCO film layers on the front surface and the back surface to obtain the heterojunction solar cell.

Step S210: and (4) performing an EL test and an IV (current-voltage) curve test, and screening out unqualified heterojunction solar cells.

The abnormal phenomena such as internal defects, hidden cracks, fragments, insufficient solder joints, broken grids and the like of the heterojunction solar cell can be detected through an Electroluminescence (EL) test, an IV curve of the heterojunction solar cell is obtained through an IV curve test, unqualified heterojunction solar cells are screened out, the quality of the heterojunction solar cell is improved, and the qualified heterojunction solar cell is packaged.

The present application further provides a heterojunction solar cell, please refer to fig. 4, and fig. 4 is a schematic structural diagram of the heterojunction solar cell provided by the present application, and the heterojunction solar cell is manufactured by the method for manufacturing the heterojunction solar cell according to any of the above embodiments, and includes a back electrode 9, a back TCO film layer 8, an n-type amorphous silicon film layer 7, a back intrinsic amorphous silicon film layer 6, a silicon wafer 1, a front intrinsic amorphous silicon film layer 2, a p-type amorphous silicon film layer 3, a front TCO film layer 4, and a front electrode 5.

The present application further provides a heterojunction photovoltaic module, as shown in fig. 5, including a first substrate 10, a first glue film layer 11, a battery layer 12, a second glue film layer 13, and a second substrate 14 stacked in sequence from bottom to top, wherein the battery layer 12 includes a plurality of heterojunction solar cells according to the above embodiments.

Optionally, as a specific embodiment, the first adhesive film layer 11 and the second adhesive film layer 13 are both EVA (Ethylene Vinyl Acetate Copolymer) adhesive film layers. However, this is not specifically limited in this application, and as another specific embodiment, the first adhesive film layer 11 and the second adhesive film layer 13 may also be both POE adhesive film layers.

In order to improve the performance of the heterojunction photovoltaic module and reduce the probability of the adhesive film layer having a subfissure, the first adhesive film layer 11 may be an anti-subfissure adhesive film layer.

The type of the second substrate 14 is not particularly limited in this application, and may be selected. For example, the second substrate 14 may be an organic glass substrate, a tempered glass substrate, an ultra white patterned glass substrate, or the like.

The kind of the first substrate 10 is determined according to the type of the heterojunction photovoltaic module, for example, when the heterojunction photovoltaic module is a single glass module, the first substrate 10 is a back plate, and when the heterojunction photovoltaic module is a dual glass module, the first substrate 10 is a glass substrate.

The heterojunction photovoltaic module can be piled up a plurality of in the transportation, because the side of second base plate is the vertically plane, very inconvenient when a transport heterojunction photovoltaic module, for the convenience of transport, the side of second base plate be to the inclined plane of battery layer slope, the transport personnel carry with the help of the side of slope, and is very convenient.

The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.

The heterojunction solar cell, the manufacturing method thereof and the heterojunction photovoltaic module provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.