阅读说明：本技术 一种单端输入的伪差分超宽带晶体管放大器 (Single-ended input pseudo-differential ultra-wideband transistor amplifier ) 是由 洪伟 唐大伟 李泽坤 周培根 于 2021-08-20 设计创作，主要内容包括：本发明公开一种单端输入的伪差分超宽带晶体管放大器,包括一路差分共发射极结构放大器(1)、一路差分共基极结构放大器(2),差分共发射极放大器的接地输入端(3)、差分共基极放大器的接地输入端(4)直接接地、两路放大器的同相输入端(7)相连接、两路放大器的同相输出端(5)相连接、两路放大器的反相输出端(6)相连接；差分共基极放大器基级(b)接共模电阻R-(b)(11)、差分共射极放大器射级(e)接共模电阻R-(e)(13)。本发明通过将差分输入端中的一个接地,并使用共模电阻抑制共模信号,避免了传统伪差分结构共模抑制特性差、且需要旁路和隔直电容导致带宽降低的问题,具有从直流到射频的超宽带输入匹配与放大特性。(The invention discloses a single-ended input pseudo-differential ultra-wideband transistor amplifier, which comprises a path of differential common emitter structure amplifier (1) and a path of differential common base structure amplifier (2), wherein a grounding input end (3) of the differential common emitter amplifier and a grounding input end (4) of the differential common base amplifier are directly grounded, non-inverting input ends (7) of two paths of amplifiers are connected, non-inverting output ends (5) of the two paths of amplifiers are connected, and inverting output ends (6) of the two paths of amplifiers are connected; the base stage (b) of the differential common base amplifier is connected with a common mode resistor R b (11) The emitter (e) of the differential common emitter amplifier is connected with a common-mode resistor R e (13). According to the invention, one of the differential input ends is grounded, and the common-mode resistor is used for suppressing the common-mode signal, so that the defects of poor common-mode suppression characteristic of the traditional pseudo-differential structure and bandwidth caused by the need of a bypass and a blocking capacitor are avoidedReduced problems with ultra-wideband input matching and amplification characteristics from dc to rf.)

1. A single-end input pseudo-differential ultra-wideband transistor amplifier topological structure is characterized by comprising a path of differential common emitter structure amplifier (1) and a path of differential common base structure amplifier (2), wherein a grounding input end (3) of the differential common emitter structure amplifier and a grounding input end (4) of the differential common base structure amplifier are directly grounded, a non-inverting input end (7) of the differential common emitter structure amplifier (1) is connected with a non-inverting input end of the differential common base structure amplifier (2), and a non-inverting output end (5) of the differential common emitter structure amplifier (1) is connected with a non-inverting output end of the differential common base structure amplifier (2); the inverting output end (6) of the differential common emitter structure amplifier (1) is connected with the inverting output end of the differential common base structure amplifier (2); differential common base structure amplifier basePole (b) passing through a common mode rejection resistor R_b(11) Is connected with a bias voltage V_bias,b(12) The emitter (e) of the amplifier with the differential common emitter structure passes through a common mode rejection resistor R_e(13) Is connected with a bias voltage V_bias,e(14)；

Three current paths positioned at the collector of the common emitter structure amplifier (1) and the emitter of the common base structure amplifier (2) for providing bias current I1(8), bias current I2(9) and bias current I3(10) of the transistor, and two voltage paths positioned at the base of the common base structure amplifier (2) and the emitter of the common emitter amplifier (1) for providing bias voltage V of the transistor_bias,b(12) Bias voltage V_bias,e(14) (ii) a The base electrode of the common emitter structure amplifier (1) is connected with the emitter electrode of the common base structure amplifier (2) to form an input port V_in(15) The collector of the common emitter structure amplifier (1) and the collector of the common base structure amplifier (2) are a differential output port Vout + (16) and a differential output port Vout- (17), respectively.

2. The single-ended input pseudo-differential ultra-wideband transistor amplifier as claimed in claim 1, wherein the differential common emitter structure amplifier (1) is composed of a third transistor (M3) and a fourth transistor (M4) with common emitters, and the base of the third transistor (M3) is connected to the input port V_in(15) The base of the fourth transistor (M4) is grounded (3), and the collector of the third transistor (c)₃) Is connected with a differential output port V_out+ (15), collector (c) of fourth transistor (M4)₄) Is connected with a differential output port V_out-(16)。

3. The single-ended input pseudo-differential ultra-wideband transistor amplifier as claimed in claim 1, wherein the differential common base structure amplifier (2) is composed of a first transistor (M1) and a second transistor (M2) with common bases, the emitter of the first transistor (M1) is grounded (4), and the emitter of the second transistor (M2) is connected to the input port V_in(15) Collector of the first transistor (c)₁) Is connected with a differential output port V_out+ (15), collector of second transistor (c)₂) Is connected with a differential output port V_out-(16)。

4. The single-ended input pseudo-differential ultra-wideband transistor amplifier according to claim 2 or 3, characterized in that the first transistor (M1), the second transistor (M2), the third transistor (M3), and the fourth transistor (M4) are Bipolar Junction Transistors (BJTs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), or High Electron Mobility Transistors (HEMTs).

5. The single-ended input pseudo-differential ultra-wideband transistor amplifier according to claim 4, wherein when the first transistor (M1), the second transistor (M2), the third transistor (M3) and the fourth transistor (M4) are Metal Oxide Semiconductor Field Effect Transistors (MOSFET) or High Electron Mobility Transistors (HEMT), the emitter, the base and the collector are correspondingly named as source, gate and drain, respectively, for the electrodes of the transistors.

6. The single-ended input pseudo-differential ultra-wideband transistor amplifier according to claim 1, characterized in that the bias current I of the transistor located in the three current path of the differential common emitter structure amplifier (1) collector and the differential common base structure amplifier (2) emitter₁(8) Bias current I₂(9) Bias current I₃(10) The voltage or current bias is provided by a resistor or a transistor; the bias voltage V of the two voltage paths of the base electrode of the differential common base electrode structure amplifier (2) and the emitter electrode of the differential common emitter structure amplifier (1)_bias,b(12) Bias voltage V_bias,e(14) By resistors, inductors, transmission lines, transformers, baluns or elements providing voltage or current bias.

7. The single-ended input pseudo-differential ultra-wideband transistor amplifier according to claim 1, characterized in that the resistor R at the base of the differential common base structure amplifier (2) is_b(11) And a resistor R of the emitter of the differential common emitter structure amplifier (1)_e(13) Change to transmission lines or to energyAn element for common mode rejection function.

Technical Field

The invention relates to a novel single-ended input pseudo-differential ultra-wideband transistor amplifier structure, in particular to an amplifier structure which is manufactured by adopting a semiconductor integrated circuit process and uses a transistor to amplify a radio frequency signal so as to realize the amplification and input matching of the ultra-wideband signal from direct current to radio frequency.

Background

The ultra-wideband radio frequency amplifier is one of core modules of a radio frequency measuring instrument and an ultra-wideband communication system, and the performance of the ultra-wideband radio frequency amplifier directly affects the working performance of radio frequency instrument equipment and the communication speed of the ultra-wideband communication system. With the further development of radio technology, the frequency band covered by the current radio frequency technology is wider and wider, and the requirement on the bandwidth of an ultra-wideband radio frequency measurement instrument is higher and higher due to the fact that the frequency band is covered from a low frequency band to a millimeter wave frequency band and is evolving towards a terahertz frequency band, and thus the requirement on the ultra-wideband amplifier is higher and higher.

However, with the increasing available frequency spectrum, in a complex radio frequency measurement instrument, a common wideband amplifier cannot meet the requirement of the instrument bandwidth, and in order to realize the measurement range of the ultra wideband, a plurality of wideband amplifiers are often required to amplify at different frequency bands, or different devices are used to measure at different frequency bands, which also causes discontinuity of the measurement result. On the other hand, the cost and power consumption are also increased considerably due to the increasing number of amplifiers required for different frequency bands. Therefore, the design of the high-performance ultra-wideband radio frequency amplifier becomes a difficulty of the high-performance ultra-wideband measuring instrument equipment.

Conventional ultra-wideband amplifiers typically employ either a traveling wave amplifier structure or a common-base (gate) amplifier structure. However, for a traveling wave amplifier, since a large number of transistors are required for single-stage amplification, this results in increased power consumption and reduced efficiency, and also generally fails to provide ultra-wideband amplification performance, for example, in the direct current DC to 200GHz range or more. For the amplifier with the common-base (grid) amplifier structure, although the structure can provide better input matching at a low frequency, the structure still cannot provide excellent input matching performance in an ultrahigh frequency band due to the influence of the physical characteristics and parasitic parameters of the transistor. Meanwhile, in order to ensure normal operation, the conventional rf amplifier also needs a lot of bypass capacitors and blocking capacitors, which also makes the conventional rf amplifier difficult to use at low frequencies.

Therefore, it is necessary to invent a transistor amplifier which can realize the amplification from direct current to radio frequency ultra wide band, does not need to use a blocking capacitor and a bypass capacitor, can greatly reduce the influence of parasitic parameters of a transistor, and can compensate the physical characteristics of the transistor, so as to be applied to various ultra wide band radio frequency measurement instruments, broadband millimeter waves and terahertz systems.

Disclosure of Invention

The technical problem is as follows: the invention aims to provide a single-ended input pseudo-differential ultra-wideband transistor amplifier structure, in particular to an amplifier structure which is manufactured by adopting a semiconductor integrated circuit process and uses a transistor to amplify a radio frequency signal so as to realize the amplification and input matching of the ultra-wideband signal from direct current to radio frequency.

The technical scheme is as follows: the single-end input pseudo-differential ultra-wideband transistor amplifier topological structure comprises a path of differential common emitter structure amplifier and a path of differential common base structure amplifier, wherein the grounding input end of the differential common emitter structure amplifier and the grounding input end of the differential common base structure amplifier are directly grounded; the inverting output end of the differential common emitter structure amplifier is connected with the inverting output end of the differential common base structure amplifier; the base of the amplifier with the differential common base structure passes through a common mode rejection resistor R_bIs connected with a bias voltage V_bias,bThe emitter of the amplifier with the differential common emitter structure passes through a common mode rejection resistor R_eIs connected with a bias voltage V_bias,e；

Three current paths located at the collector of the common emitter structure amplifier and the emitter of the common base structure amplifier are used for providing bias current I1, bias current I2 and bias current I3 of the transistor, and two voltage paths located at the base of the common base structure amplifier and the emitter of the common emitter structure amplifier are used for providing bias voltage V of the transistor_bias,bBias voltage V_bias,e(ii) a The base electrode of the common emitter structure amplifier is connected with the emitter electrode of the common base structure amplifier to form an input port V_inThe collector of the common emitter structure amplifier and the collector of the common base structure amplifier are a differential output port Vout + and a differential output port Vout-.

The differential common emitter structure amplifier is composed of a third transistor and a fourth transistor, wherein the base electrode of the third transistor is connected with the input port V_inThe base of the fourth transistor is grounded, and the collector of the third transistor is connected with a differential output port V_outThe collector of the fourth transistor is connected with a differential output port V_out-。

The differential common base structure amplifier is composed of a first transistor and a second transistor, wherein the common base of the first transistor and the second transistor are connected, the emitter of the first transistor is grounded, and the emitter of the second transistor is connected with an input port V_inThe collector of the first transistor is connected with the differential output port V_outThe collector of the second transistor is connected with a differential output port V_out-。

The first transistor, the second transistor, the third transistor and the fourth transistor are bipolar junction transistors BJTs, metal oxide semiconductor field effect transistors MOSFETs or high electron mobility transistors HEMTs.

When the first transistor, the second transistor, the third transistor and the fourth transistor are Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) or High Electron Mobility Transistors (HEMTs), the electrodes of the transistors are named differently, and the emitter, the base and the collector are correspondingly a source, a gate and a drain.

The bias current I of the transistor positioned in the three-way current path of the collector of the differential common emitter structure amplifier and the emitter of the differential common base structure amplifier₁Bias current I₂Bias current I₃The voltage or current bias is provided by a resistor or a transistor; the bias voltage V of the two voltage paths of the base electrode of the differential common base electrode structure amplifier and the emitter electrode of the differential common emitter structure amplifier_bias,bBias voltage V_bias,eThrough a resistorAn inductor, a transmission line, a transformer, a balun, or an element providing a voltage or current bias.

The resistor R at the base of the amplifier with the differential common base structure_bAnd a resistor R of the emitter of the amplifier with a differential common emitter structure_eTo transmission lines or elements capable of providing a common mode rejection function.

Has the advantages that:

1) the full-band pseudo-differential structure has the advantages that single-end input is achieved, the rear stage is a differential circuit, a full-band differential ground can be provided, meanwhile, due to the fact that the input ends of the two transistors are directly grounded, structures such as bypass capacitors and blocking capacitors are not needed, the low-frequency characteristic of the amplifier is greatly improved, the problem that the bandwidth of a traditional differential input amplifier is limited due to the fact that a balun is needed is solved, and the problem that the low frequency cannot be amplified due to the fact that the blocking capacitor is needed by the traditional single-end input amplifier is solved.

2) The common mode rejection and the input matching of the full frequency band are realized, the ultra-wideband input impedance matching is realized by using a parallel structure of a common base amplifier and a common emitter amplifier, and the input impedance of 50 ohms can be realized in the full frequency band; through using common mode resistance to restrain common mode signal, the full frequency band common mode rejection of direct current to radio frequency has been realized, greatly promotes the stability of circuit.

3) There is no special requirement for the transistor, and various types of transistors such as a Bipolar Junction Transistor (BJT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a High Electron Mobility Transistor (HEMT), and the like can be selected.

4) The method is suitable for various broadband amplifier application occasions such as ultra-wideband radio frequency instruments, radio frequency receivers, radars, radio telescopes, radio frequency instruments and the like, and particularly is suitable for application scenes needing direct current to radio frequency ultra-wideband amplification.

Drawings

FIG. 1 is a schematic diagram of a single-ended input pseudo-differential ultra-wideband transistor amplifier topology in the present invention (using bipolar junction transistors);

FIG. 2 is a schematic diagram of a circuit for implementing the present invention in an ultra-wideband amplifier;

FIG. 3 is a diagram of the index and the gain of an ultra-wideband amplifier applying the present inventionAnd comparing the performance indexes of the traditional common-emitter amplifier and the traditional common-base amplifier under the same bias. Wherein (a) is input matching S11 parameter, (b) is reverse isolation S12 parameter, (c) is forward gain S21 parameter, (d) is output matching S22 parameter, (e) is stability factor K parameter, and (f) is common mode output maximum gain MaxGain_CMParameters, (g) maximum gain MaxGain parameters, (h) results of input matching S11 and output matching S22 in the Smith chart. Each index is far superior or similar to the traditional amplifier structure.

The figure shows that: a differential common emitter structure amplifier 1, a differential common base structure amplifier 2, a grounding input end 3 of the differential common emitter structure amplifier, a grounding input end 4 of the differential common base structure amplifier, a non-inverting output end 5 of the differential common emitter structure amplifier, an inverting output end 6 of the differential common emitter structure amplifier, a non-inverting input end 7 of the differential common emitter structure amplifier, a bias current I₁8. Bias current I₂9. Bias current I₃10. Bias resistor R_b11. Bias voltage V_bias,b12. Bias resistor R_e13. Bias voltage V_bias,e14. Input port V_in15. Differential output port V_out+16, differential output port V_out-17; a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4; collector c of the first transistor₁Collector c of the second transistor₂A collector c of the third transistor₃Collector c of fourth transistor M4₄。

Detailed Description

The invention will be further described with reference to the accompanying drawings

As shown in fig. 1, a single-ended pseudo-differential ultra-wideband transistor amplifier topology of the present invention is a single-ended pseudo-differential ultra-wideband transistor amplifier structure.

The amplifier comprises a path of differential common emitter structure amplifier 1 and a path of differential common base structure amplifier 2, wherein the grounding input end 3 of the differential common emitter structure amplifier and the grounding input end 4 of the differential common base structure amplifier are directly grounded, and the differential common emitter structure amplifier amplifiesThe in-phase input end 7 of the amplifier 1 is connected with the in-phase input end of the differential common base structure amplifier 2, and the in-phase output end 5 of the differential common emitter structure amplifier 1 is connected with the in-phase output end of the differential common base structure amplifier 2; the inverting output end 6 of the differential common emitter structure amplifier 1 is connected with the inverting output end of the differential common base structure amplifier 2; the base b of the amplifier with the differential common base structure passes through a common mode rejection resistor R_b11 is connected with a bias voltage V_bias,b12, the emitter e of the amplifier with the differential common emitter structure passes through a common mode rejection resistor R_e13 to bias voltage V_bias,e14；

A three-way current path positioned between the collector of the common emitter structure amplifier 1 and the emitter of the common base structure amplifier 2 to provide a bias current I18, a bias current I29 and a bias current I310 of the transistor, and a two-way voltage path positioned between the base of the common base structure amplifier 2 and the emitter of the common emitter amplifier 1 to provide a bias voltage V of the transistor_bias,b12. Bias voltage V_bias,e14; the base electrode of the common emitter structure amplifier 1 is connected with the emitter electrode of the common base structure amplifier 2 to form an input port V_in15, the collector of the common emitter structure amplifier 1 and the collector of the common base structure amplifier 2 are a differential output port Vout +16 and a differential output port Vout-17 respectively.

In the figure, the upper first transistor M1 and the second transistor M2 form a differential common base structure amplifier, and the lower third transistor M3 and the fourth transistor M4 form a differential common emitter structure amplifier 1. The differential common emitter structure amplifier 1 is composed of a third transistor M3 and a fourth transistor M4 common emitter, wherein the base of the third transistor M3 is connected with the input port V_in15, the base of the fourth transistor M4 is grounded 3, and the collector c of the third transistor₃Is connected with a differential output port V_out+15, collector c of fourth transistor M4₄Is connected with a differential output port V_out-16。

The differential common base structure amplifier 2 is composed of a first transistor M1 and a second transistor M2, wherein the common base of the first transistor M1 and the second transistor M2 are connected, the emitter of the first transistor M1 is grounded 4, and the emitter of the second transistor M2 is connected with an input port V_in15, collector c of the first transistor₁Is connected with a differential output port V_out+15, collector c of the second transistor₂Is connected with a differential output port V_out-16。

Three current paths between collector of common emitter configuration amplifier and emitter of common base configuration amplifier to provide bias current I of transistor₁8. Bias current I₂9. Bias current I₃10, resistor R at the base of the amplifier and at the emitter of the common emitter amplifier in a common base configuration_b11. Resistance R_e13. And two corresponding voltage paths for providing bias voltage V of the transistor_bias,b12. Bias voltage V_bias,e14, input port V at base of amplifier in common emitter configuration or emitter of amplifier in common base configuration_in15, differential output port Vout +16 and differential output port Vout-17 at collector of common emitter structure amplifier or collector of common base structure amplifier

FIG. 2 is a schematic circuit diagram of the present invention implemented in a single ended input ultra wideband amplifier;

fig. 3 is a comparison of the performance index of a single-ended input ultra-wideband amplifier and the performance index of a conventional single-ended input cascode amplifier and a conventional single-ended input cascode amplifier under the same bias, wherein the conventional single-ended input cascode amplifier and the conventional single-ended input cascode amplifier use an ideal blocking capacitor for blocking dc to further prove the advantages of the structure. As can be seen from fig. 3(a), the stability factor K of the amplifier is greater than 1 in the full frequency band, which is far better than the conventional common-emitter structure and the conventional common-base structure; in FIG. 3(b), the amplifier has a maximum gain MaxGain in common mode output_CMThe common mode rejection performance is far better than that of the traditional common-emitter structure and the traditional common-base structure; as can be seen in fig. 3(c), after the present invention is used, the input matching S11 of the amplifier is lower than-27 dB in the full frequency band, which is far better than the conventional single-ended input common-emitter structure and the conventional single-ended input common-base structure; in fig. 3(d), the reverse isolation S12 of the amplifier is the lowest in the full band, which is far better than the conventional cascode structure and the conventional cascode structure; in fig. 3(e), the forward gain S21 of the amplifier is highest in most of the frequency band,the structure is far superior to the traditional common-emitter structure and the traditional common-base structure; in fig. 3(f), the output matching S22 of the amplifier is the lowest in the full band, which is far better than the conventional cascode structure and the conventional cascode structure; in fig. 3(g), the maximum gain of the amplifier MaxGain is equivalent to the conventional cascode structure in the full band and the conventional cascode structure; in fig. 3(h), the input match S11 of the amplifier is centered on the Smith chart for the full band, which is up to the full band.

The first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4 are bipolar junction transistors BJT, metal oxide semiconductor field effect transistors MOSFET or high electron mobility transistors HEMT.

When the first transistor M1, the second transistor M2, the third transistor M3, and the fourth transistor M4 are MOSFETs or HEMTs, the electrodes of the transistors are named differently, and the emitter, the base, and the collector are correspondingly a source, a gate, and a drain.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.