阅读说明：本技术 控制极紫外光源中的转换效率 (Controlling conversion efficiency in extreme ultraviolet light sources ) 是由 王海宁 T·W·德赖森 A·A·沙夫甘斯 D·U·H·特雷斯 D·J·W·布朗 R·J·拉 于 2020-03-31 设计创作，主要内容包括：一种极紫外(EUV)光源包括：真空容器；向真空容器的内部供应靶标的靶标材料供应系统,靶标包括在初始靶标区域处具有初始形状的第一靶标；被配置为向第一靶标区域提供第一光束的第一光源,第一光束被配置为修改初始靶标的初始形状；以及被配置为向第二靶标区域提供第二光束的第二光源,第二靶标区域被配置为接收经修改的靶标,第二光束被配置为将经修改的靶标中的靶标材料中的一些靶标材料转换为发射EUV光的等离子体。第一靶标的初始形状被控制以由此控制由第二光束与经修改的靶标之间的相互作用产生的等离子体的量。(An Extreme Ultraviolet (EUV) light source comprising: a vacuum vessel; a target material supply system that supplies a target to an interior of the vacuum vessel, the target including a first target having an initial shape at an initial target region; a first light source configured to provide a first light beam to a first target region, the first light beam configured to modify an initial shape of an initial target; and a second light source configured to provide a second beam of light to a second target region, the second target region configured to receive the modified target, the second beam of light configured to convert some of the target material in the modified target into a plasma that emits EUV light. The initial shape of the first target is controlled to thereby control the amount of plasma generated by the interaction between the second beam and the modified target.)

1. An Extreme Ultraviolet (EUV) light source comprising:

a vacuum vessel;

a target material supply system configured to supply a target to an interior of the vacuum vessel, the target including at least a first target, wherein the first target has an initial shape at an initial target region in the vacuum vessel;

a first light source configured to provide a first light beam to a first target region in the vacuum vessel, the first light beam configured to modify the initial shape of the initial target to form a modified target; and

a second light source configured to provide a second beam of light to a second target region in the vacuum vessel, the second target region configured to receive the modified target, the second beam of light configured to interact with the modified target and convert at least some of the target material in the modified target to a plasma that emits EUV light, wherein

The initial shape of the first target is controlled to thereby control the amount of plasma generated by the interaction between the second beam and the modified target.

2. An EUV light source according to claim 1, wherein the target material comprises a molten metal and the supply system comprises:

a reservoir configured to hold the target material;

a nozzle configured to fluidly couple to the reservoir and to launch the target into an interior of the vacuum vessel; and

an actuator mechanically coupled to the nozzle.

3. An EUV light source as claimed in claim 2, wherein the initial shape of the first target at the initial target region is controlled by vibrating the nozzle at more than one frequency by the actuator.

4. An EUV light source as claimed in claim 2 wherein the spacing between the first and second targets is controlled by adjusting the pressure applied to the target material in the reservoir and the second target is supplied by the target supply system before the first target.

5. An EUV light source according to claim 4, wherein the initial shape of the first target is based on a controlled spacing between the first target and the second target.

6. The EUV light source of claim 1, further comprising a third light source configured to provide a third beam of light to a third target region, and wherein the third target region is configured to receive the first target and the initial shape of the first target at the initial target region is controlled by interacting the first target with the third beam of light.

7. An EUV light source according to claim 6, wherein the third target region is closer to the target material supply system than the first and second target regions.

8. An EUV light source as claimed in claim 1, wherein the initial shape of the first target at the initial target region comprises an oblate spheroid of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and the ratio of the first length to the second length is between 0.6 and 0.8.

9. An EUV light source as claimed in claim 1, wherein the initial shape of the first target at the initial target region comprises an oblate spheroid of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and the ratio of the first length to the second length is between 0.75 and 0.9.

10. An EUV light source as claimed in claim 1, wherein the initial shape of the first target at the initial target region comprises an oblate spheroid of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and the ratio of the first length to the second length is about 0.8.

11. An EUV light source as claimed in claim 1, wherein the modified target has a morphology determined by the initial shape of the first target at the initial target region, the morphology describing the shape of the target and/or target material density in three dimensions.

12. An EUV light source as claimed in claim 11, wherein the modified target comprises a lateral length in one of the three dimensions, the lateral length being dependent on the distance between the first and second target regions.

13. An EUV light source as claimed in claim 1 wherein the initial shape of the first target material droplet is controlled to thereby control the amount of plasma generated by interaction between the second beam of light and the modified target comprises: the initial shape of the first target material is controlled to thereby control a conversion efficiency, CE, of the EUV light source, the CE being a ratio of energy supplied to the modified target to energy emitted from the plasma as EUV light.

14. An EUV light source according to claim 1, wherein the initial target region is between the target material supply system and the first target region.

15. A method of controlling conversion efficiency, CE, in an extreme ultraviolet, EUV, light source, the method comprising:

determining an initial shape of an initial target by controlling components of the EUV light source;

interacting a pre-pulsed light beam with the initial target to form a modified target; and

interacting a primary light pulse with the modified target to produce a plasma that emits EUV light, wherein the interaction between the modified target and the primary light pulse is associated with a Conversion Efficiency (CE), the CE being a ratio of energy supplied to the modified target to energy emitted from the plasma as EUV light, and the CE being controlled based on the determined initial shape of the initial target.

16. The method of claim 15, wherein the component of the EUV light source comprises a reservoir as part of a target material supply system, and

determining the initial shape of the initial target comprises: controlling an amount of pressure on molten target material in the reservoir prior to generating the initial target by the target supply system.

17. The method of claim 16, wherein controlling the amount of pressure on the molten target material in the reservoir controls a spacing between the primary target and another target, and the initial shape of the primary target is based on the spacing.

18. The method of claim 15, wherein the component of the EUV light source comprises an actuator coupled to a capillary of a target material supply system, and

determining the initial shape of the initial target comprises: controlling the actuator such that the actuator vibrates the tube at a frequency of one more.

19. The method of claim 18, wherein controlling the actuator causes the actuator to vibrate the tube at more than one frequency to produce a stream of coalescing targets from a jet of target material, and further comprising adjusting one of the more than one frequency such that two of the coalescing targets merge into a merge target, and the initial target is the merge target.

20. The method of claim 15, wherein a component of the EUV light source comprises a target material supply system configured to supply the initial target and at least a second target, and

determining the initial shape of the initial target comprises: controlling the target material supply system such that a spacing between the primary target and the secondary target is adjusted, the secondary target being supplied by the target supply system prior to the primary target.

21. The method of claim 15, wherein the component of the EUV light source comprises an initial light source configured to provide an initial beam of light, and

determining the initial shape of the initial target comprises: controlling the primary light source such that the primary light beam interacts with the primary target, and wherein the primary shape of the primary target is determined at least in part by interacting the primary target with the primary light beam.

Technical Field

The present disclosure relates to controlling Conversion Efficiency (CE) in an Extreme Ultraviolet (EUV) light source.

Background

Extreme ultraviolet ("EUV") light (e.g., electromagnetic radiation having a wavelength of 100 nanometers (nm) or less (sometimes also referred to as soft X-rays), including light having a wavelength of, for example, 20nm or less, between 5 and 20nm, or between 13 and 14 nm) can be used in a lithographic process to produce very small features in a substrate (e.g., a silicon wafer) by inducing polymerization in a resist layer.

Methods of producing EUV light include, but are not necessarily limited to, converting materials containing elements (e.g., xenon, lithium, or tin) that have emission lines in the EUV range when in a plasma state. In one such method, commonly referred to as laser produced plasma ("LPP"), the required plasma may be produced by irradiating the target material (e.g., in the form of droplets, plates, ribbons, streams or clusters of material) with an amplified beam which may be referred to as a drive laser. For this process, plasma is typically generated in a sealed container (e.g., a vacuum chamber) and monitored using various types of metrology equipment.

Disclosure of Invention

In one aspect, an Extreme Ultraviolet (EUV) light source includes: a vacuum vessel; a target material supply system configured to supply a target to an interior of a vacuum vessel, the target including at least a first target having an initial shape at an initial target region in the vacuum vessel; a first light source configured to provide a first light beam to a first target region in the vacuum vessel, the first light beam configured to modify an initial shape of the initial target to form a modified target; and a second light source configured to provide a second light beam to a second target region in the vacuum vessel, the second target region configured to receive the modified target, the second light beam configured to interact with the modified target and convert at least some of the target material in the modified target to a plasma that emits EUV light. The initial shape of the first target is controlled to thereby control the amount of plasma generated by the interaction between the second beam and the modified target.

Implementations may include one or more of the following features. The target material may include molten metal, and the supply system may include: a reservoir configured to hold a target material; a nozzle configured to fluidly couple to the reservoir and to fire the target into the interior of the vacuum vessel; and an actuator mechanically coupled to the nozzle. The initial shape of the primary target at the initial target region may be controlled by causing the actuator to vibrate the nozzle at more than one frequency. The spacing between the first target and the second target may be controlled by adjusting the pressure applied to the target material in the reservoir, and the second target may be supplied by the target supply system before the first target. The initial shape of the first target may be based on a controlled spacing between the first target and the second target.

In some implementations, the EUV light source further includes a third light source configured to provide a third beam of light to a third target region. In these implementations, the third target region is configured to receive the first target, and an initial shape of the first target at the initial target region is controlled by interacting the first target with the third light beam. The third target region may be closer to the target material supply system than the first target region and the second target region.

The initial shape of the first target at the initial target region may be an oblate spheroid of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and a ratio of the first length to the second length is between 0.6 and 0.8.

The initial shape of the first target at the initial target region may be an oblate spheroid of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and a ratio of the first length to the second length is between 0.75 and 0.9.

The initial shape of the first target at the initial target region may be an oblate spheroid of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and a ratio of the first length to the second length is about 0.8.

The modified target may have a morphology determined by the initial shape of the first target at the initial target region, the morphology describing the shape of the target in three dimensions and/or the target material density. The modified target may include a lateral length in one of three dimensions, which may depend on the distance between the first target region and the second target region.

The initial shape of the first target material droplet being controlled to thereby control the amount of plasma generated by the interaction between the second beam and the modified target may comprise: the initial shape of the first target material is controlled to thereby control the Conversion Efficiency (CE) of the EUV light source, CE being the ratio of the energy supplied to the modified target to the energy emitted from the plasma as EUV light.

The initial target region may be between the target material supply system and the first target region.

In another general aspect, a method of controlling Conversion Efficiency (CE) in an Extreme Ultraviolet (EUV) light source includes: determining an initial shape of an initial target by controlling components of the EUV light source; interacting the pre-pulsed light beam with the initial target to form a modified target; and interacting the main light pulse with the modified target to produce a plasma that emits EUV light. The interaction between the modified target and the main light pulse is associated with a Conversion Efficiency (CE), CE being the ratio of the energy supplied to the modified target to the energy emitted from the plasma as EUV light, and CE is controlled based on the determined initial shape of the initial target.

Implementations may include one or more of the following features. The components of the EUV light source may include a reservoir as part of the target material supply system, and determining the initial shape of the initial target may include: the amount of pressure on the molten target material in the reservoir is controlled prior to generating the initial target by the target supply system. Controlling the amount of pressure on the molten target material in the reservoir may control the spacing between the initial target and another target, and the initial shape of the initial target may be based on the spacing.

The component of the EUV light source may be an actuator coupled to a capillary of the target material supply system, and determining the initial shape of the initial target may include: the actuator is controlled such that the actuator vibrates the tube at more than one frequency. Controlling the actuator such that the actuator vibrates the tube at more than one frequency from the jet of target material may generate a stream of coalescing targets, and the method may further include adjusting one of the more than one frequency such that two of the coalescing targets merge into a merge target, and the initial target is the merge target.

The components of the EUV light source may include a target material supply system configured to supply an initial target and at least a second target, and determining an initial shape of the initial target may include: controlling the target material supply system such that a spacing between the primary target and a secondary target is adjusted, the secondary target being supplied by the target supply system prior to the primary target.

The components of the EUV light source may include an initial light source configured to provide an initial beam of light, and determining an initial shape of an initial target may include: the primary light source is controlled such that the primary light beam interacts with the primary target, and a primary shape of the primary target may be determined at least in part by interacting the primary target with the primary light beam.

Implementations of any of the above techniques may include an EUV light source, system, method, process, apparatus, or device. The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims.

Drawings

FIG. 1 is a block diagram of an Extreme Ultraviolet (EUV) light source.

FIG. 2 is a block diagram of another Extreme Ultraviolet (EUV) light source.

FIG. 3 is a flow chart of an example process for controlling Conversion Efficiency (CE) in an EUV light source.

FIG. 4 is a block diagram of another Extreme Ultraviolet (EUV) light source.

FIG. 5 is a block diagram of another Extreme Ultraviolet (EUV) light source.

Fig. 6A to 6D are examples of experimental data.

Fig. 7A and 7B are respective block diagrams of a lithography system.

FIG. 8 is a block diagram of another Extreme Ultraviolet (EUV) light source.

Detailed Description

Referring to FIG. 1, a block diagram of an Extreme Ultraviolet (EUV) light source 100 is shown. EUV light source 100 is part of EUV lithography system 101, EUV lithography system 101 including an output 199 (e.g., a lithography apparatus), output 199 receiving exposure beam 198 generated by EUV light source 100. A stream 121 of targets is generated by the target supply system 110 and travels toward the target region 124_ 2. Each target in stream 121 includes a target material that emits EUV light in a plasma state. Techniques are disclosed for controlling the Conversion Efficiency (CE) of a light source 100 by controlling the initial target shape. The initial target shape is the shape of the target in stream 121 prior to interaction with light pulse 104_2 (which is also referred to as a pre-pulse).

In the example shown in fig. 1, an initial target 121p, which is one of the targets in the stream 121, is located in the target region 124_ 2. The light pulse 104_2 interacts with the initial target 121p to form a modified target 121 m. The modified target 121m may be, for example, a disk-shaped distribution of target material having a greater extent in the xy plane than the target 121p and a lesser extent along the z-axis than the original target 121 p. The modified target 121m may be a particle cloud or fog having a larger volume in three dimensions than the original target 121 p. The modified target 121m interacts with the light pulse 104_1 (also referred to as the main pulse) to form a plasma 196 of emitted light 197 (which includes EUV light 193). The modified target 121m has a morphology or morphological characteristic that determines or affects how much target material in the modified target 121m is converted to the plasma 196. The Conversion Efficiency (CE) is the ratio of the energy supplied by the light pulse 104_1 to the modified target 121m to the amount of energy emitted from the plasma 196 as EUV light 193. Because the morphology of the modified target 121m affects the amount of target material converted to the plasma 196, the morphology of the modified target 121m affects the amount of EUV light 193 generated and thus also the CE.

The EUV light source 100 includes a control system 150, the control system 150 controlling the initial target shape to thereby control the morphology, and thus the CE, of the modified target 121 m. In the following discussion, the final target is the target used to generate the plasma 196. In the example of fig. 1, the modified target 121m is the final target. The morphology of the final target describes, for example, the spatial arrangement or shape of the target material in the final target and/or the density of the target material in the final target in at least one dimension. In some implementations, the morphology of the final target describes the density of the final target in three dimensions.

The initial target 121p is the target in the stream 121 that is located at the target region 124_2 but has not yet interacted with the light pulse 104_ 2. The shape of the primary target is also referred to as the primary target shape. The location of the primary target 121p in the vacuum chamber may be referred to as the primary target region. In the example of fig. 1, the shape of the primary target 121p is the primary target shape, and the primary target area is the area where the primary target 121p was located just prior to interaction with the light pulse 104_ 2. The various targets in stream 121 may have different shapes. For example, some of the targets in stream 121 may be substantially spherical droplets, and the primary targets 121p may have a non-spherical shape. Thus, even if some of the targets in stream 121 are spherical droplets, the initial target shape may be non-spherical.

The control system 150 controls the morphology of the final target by controlling the initial target shape. The control system 150 controls the initial target shape by, for example: adjusting a pressure p applied to the target material in the reservoir 118; controlling the frequency at which the modulator 132, mechanically coupled to the target supply system 110, is vibrated to thereby introduce relative motion between the individual targets in the stream 121, such that the targets merge to form a larger target having a particular shape before reaching the target region 124_ 2; and/or interacting the primary target with a third light pulse (e.g., light pulse 204_3 of fig. 2). Before discussing these various techniques in more detail, an overview of the EUV light source 100 is provided.

The targets in stream 121 are spatially separated from each other and spatially distinct from each other. Under the expected operating conditions of the light source 100, the targets in the stream 121 enter the target region 124_2 one at a time. The target region 124_2 also receives the optical pulse 104_ 2. The interaction between the light pulse 104_2 and the initial target 121p forms a modified target 121 m. The interaction between the light pulse 104_2 and the initial target 121p may enhance the ability of the modified target 121m to absorb the light pulse 104_ 1. For example, the interaction between the light pulse 104_2 and the primary target 121p may change the shape, volume, and/or size of the target material distribution, and/or may reduce the density gradient of the target material along the direction of propagation of the primary pulse 104_ 1. Changes in spatial characteristics may also cause changes in physical characteristics. For example, if the modified target 121m is larger than the original target 121p in at least one dimension, the target material spreads out in that dimension and the density of the target material in that dimension is lower compared to the density of the original target 121p along the same dimension.

The target region 124_2 is located between the target supply system 110 and the target region 124_ 1. The modified target 121m drifts to the target region 124_1 approximately along the x-direction and is illuminated by the light pulse 104_ 1. The interaction between the modified target 121m and the light pulse 104_1 converts at least some of the target material in the modified target 121m into plasma 196 that emits light 197. The generation of the plasma 196 by the interaction between the modified target 121m and the beam 104_1 is referred to as a plasma generation event.

The light 197 includes EUV light 193, and the wavelength of the EUV light 193 corresponds to an emission line of the target material. The EUV range may include light having a wavelength of, for example, 5 nanometers (nm), 5nm to 20nm, 10nm to 120nm, or less than 50 nm. The light 197 may also include wavelengths outside the EUV range. Light having a wavelength outside the EUV range is referred to as out-of-band light. For example, the target material may include tin. In these implementations, the light 197 includes EUV light and also includes out-of-band light, such as Deep Ultraviolet (DUV), visible light, Near Infrared (NIR), mid-wavelength infrared (MWIR), and/or long-wavelength infrared (LWIR) light. The DUV light may include light having a wavelength between about 120nm and 300nm, the visible light may include light having a wavelength between about 390nm and 750nm, the NIR light may include light having a wavelength between about 750nm and 2500nm, the MWIR light may have a wavelength between about 3000nm and 5000nm, and the LWIR light may have a wavelength between about 8000nm and 12000 nm.

The EUV light source 100 includes an optical element 113 in the vacuum chamber 109. Optical element 113 is positioned to collect at least some of light 193 to form exposure beam 198. The optical element 113 may be, for example, a curved mirror having a reflective surface 116 facing the target region 124_ 1. The optical element 113 may also include an aperture (not shown) that allows the light pulse (e.g., light pulse 104_1) to reach the target region 124_ 1. The reflective surface 116 receives and reflects at least some of the light 193 to form an exposure beam 198. The reflective surface 116 has a coating or other optical mechanism such that the optical element 113 reflects wavelengths in the EUV range but does not reflect out-of-band components of the light 197 or reflects only nominal amounts of out-of-band components of the light 197. In this manner, the exposure beam 198 includes primarily EUV light and includes little or no out-of-band light. Lithographic apparatus 199 exposes substrate 195 (e.g., a silicon wafer) using EUV exposure beam 198 to thereby form electronic features on substrate 195.

Light pulse 104_1 is a single light pulse that is part of light beam 106_ 1. The beam 106_1 is a train of pulses, each pulse separated in time from an adjacent pulse. The pulse 104_1 has a finite time span called the pulse duration. The pulse duration may be the total time during which the light pulse 104_1 has a non-zero optical power. Other metrics may be used to describe the pulse duration. For example, the pulse duration may be less than the time during which the light pulse 104_1 has non-zero power, such as the full width at half maximum (FWHM) of the pulse 104_ 1. The light beam 106_1 is formed by the light source 108_1 and delivered to the target region 124_1 by the beam delivery system 105_ 1.

Light pulse 104_2 is a single light pulse in light beam 106_2, light beam 106_2 comprising a train of temporally separated pulses. The light pulses 104_2 have a finite time span. The light pulse 104_2 is formed by the light source 108_2, propagates along the beam path 107_2, and is delivered to the target region 124_2 via the beam delivery system 105_ 2.

The light sources 108_1 and 108_2 are part of an optical system or light generating module 108. The light sources 108_1 and 108_2 may be, for example, two lasers. For example, the light sources 108_1, 108_2 may be two carbon dioxide (CO)₂) A laser. In other implementations, the light sources 108_1, 108_2 may be different types of lasers. For example, the light source 108_2 may be a solid state laser and the light source 108_1 may be a CO₂A laser. The first light beam 106_1 and the second light beam 106_2 may have different wavelengths. For example, the light sources 108_1 and 108_2 comprise two COs₂In a laser implementation, the wavelength of the first beam 106_1 may be about 10.26 microns (μm) and the wavelength of the second beam 106_2 may be between 10.18 μm and 10.26 μm. The wavelength of the second light beam 106_2 may be about 10.59 μm. In these implementations, the beams 106_1, 106_2 are made of CO₂Different lines of laser generation result in beams 106_1, 106_2 having different wavelengths, even though both beams are generated by the same type of source.

Optical pulse 104_2 may have a duration of 1 picosecond (ps) to 100 nanoseconds (ns), for example, pulse 104_2 may have a duration of 1 to 100ns and a wavelength of about 1 μm or 10.6 μm. In some implementations, pulse 104_2 is a laser pulse having an energy of about 1 to 100mJ, a pulse duration of about 1 to 70ns, and a wavelength of about 1 to 10.6 μm. In these implementations, the modified target 121m can be a substantially disc-shaped target. In some implementations, pulse 104_2 has a duration of less than 1ns and a wavelength of 1 μm. For example, pulse 104_2 may have a duration of 300ps or less, 100ps or less, between 100 and 300ps, or between 10 and 100 ps. In these implementations, the modified target 121m may be a cloud or mist of target material particles.

The beam delivery systems 105_1, 105_2 comprise respective optical systems 112_1, 112_ 2. The optical systems 112_1, 112_2 comprise one or more optical elements or components capable of interacting with the respective light beams 106_1, 106_ 2. For example, the optical component element or component may include passive optical devices (such as mirrors, lenses, and/or prisms) and any associated mechanical mounting devices and/or electronic drivers. These components may steer and/or focus the light beam 106_ 1. Further, the optical element or assembly may include an assembly that modifies one or more characteristics of the light beam to form and/or modify the light pulses. For example, the optical assembly may include active optical devices, such as an acousto-optic modulator and/or an electro-optic modulator, capable of altering the temporal pulse shape of light beam 106_1 or light beam 106_2 to form light pulse 104_1 or light pulse 104_2, respectively. In the example of fig. 1, light beams 106_1 and 106_2 interact with separate beam delivery systems 105_1, 105_2, respectively, and travel on separate optical paths 107_1, 107_2, respectively. However, in other implementations, beams 106_1 and 106_2 share all or part of the same optical path, and may also share the same beam delivery system.

The EUV light source 100 further comprises a target supply system 110, the target supply system 110 emitting a stream 121 of the target into the vacuum chamber 109. The target supply system 110 includes a target forming structure 117, the target forming structure 117 including a nozzle defining an orifice 119. In operational use, the orifice 119 is fluidly coupled to a reservoir 118, the reservoir 118 containing the target mixture 111 at a pressure p. The target supply system 110 also includes a pressure system 170. The pressure system 170 includes, for example, pumps, gas supplies, valves, and/or other devices capable of increasing, decreasing, or maintaining the pressure p applied to the target mixture 111 in the reservoir 118.

The target mixture 111 includes a target materialA target material is any material that has an emission line in the EUV range when in a plasma state. The target material may be, for example, tin, lithium or xenon. Other materials may be used as target materials. For example, tin element may be used as pure tin (Sn); as tin compounds, e.g. SnBr₄、SnBr₂、SnH₄(ii) a As a tin alloy, for example a tin-gallium alloy, a tin-indium-gallium alloy or any combination of these alloys. The target mixture may also include impurities such as non-target particles or inclusion particles, for example tin oxide (SnO)₂) Particles or tungsten (W) particles.

In the implementation shown in fig. 1, the structure 117 includes a capillary 114, the capillary 114 extending generally along the x-direction to an aperture 119. An aperture 119 is at the end of the capillary 114 and in the vacuum chamber 109. The capillary 114 may be made of glass, for example, in the form of fused silica or quartz. The target mixture 111 is in a form capable of flowing. For example, in implementations where the target mixture 111 includes a metal that is solid at room temperature (e.g., tin), the metal is heated to a temperature at or above the melting point of the metal and maintained at that temperature such that the target is in liquid form in the target mixture 111. The target mixture 111 flows through the capillary 114 and is ejected into the chamber 109 through the orifice 119. The laplace pressure is the pressure difference between the inside and the outside of the curved surface forming the boundary between the gas area and the liquid area. The pressure difference is caused by the surface tension of the interface between the liquid and the gas. When the pressure p is greater than the laplace pressure, the target mixture 111 exits the orifice 119 as a continuous jet 125.

The jet 125 splits into individual targets according to the Rayleigh-Plateau instability of the liquid jet. In the implementation of fig. 1, the sidewall 115 of the capillary 114 is mechanically coupled to the actuator 132. The actuator 132 may be, for example, a piezoelectric actuator that expands and contracts in response to an applied voltage signal to thereby cause deformation of the sidewall 115. By deforming the sidewall 115, a pressure wave is formed in the target mixture 111 in the supply system 110, and the pressure of the target mixture 111 in the supply system 110 is modulated. The pressure modulation may control the break-up of the jet 125 into droplets such that the individual droplets coalesce into larger droplets that reach the target region 124_2 at a desired rate and have certain characteristics. For example, the action of the actuator 132 may be controlled in a particular manner to control the initial shape of the target in the flow 121, as discussed in more detail with respect to fig. 3 and 5.

In fig. 1 and 2, the dashed lines represent communication paths or data links along which electrical signals including data and information flow. A communication path or data link is any type of connection capable of transmitting data. For example, a data link or communication path may be a wired and/or wireless connection configured to transmit electronic signals and commands including data and/or information. The target provisioning system 110 is coupled to the control system 150 via a data link 152. The control system 150 is configured to control the various components of the target delivery system 110 by sending command signals 129 to the target delivery system 110 via a data link 152.

For example, in some implementations, the actuator 132 is coupled to the control system 150 via a data link 152. In these implementations, the control system 150 generates the command signal 129 that is provided to the actuator 132. When the command signal 129 is applied to the actuator 132 or an element associated with the actuator 132, the actuator 132 moves in a manner governed by the contents of the command signal 129. For example, the actuator 132 may be a piezoceramic material that changes shape based on an applied voltage. In these implementations, the control system 150 generates a voltage waveform that is delivered to the actuator 132. The amplitude and/or polarity of the waveform applied to the actuator 132 is based on signals from the control system 150. Due to the mechanical coupling between the capillary 114 and the actuator 132, when the actuator 132 moves or vibrates, the sidewall 115 deforms and the pressure of the target mixture 111 in the capillary 114 is modulated.

In some implementations, the control system 150 is coupled to the pressure system 170 through a data link 152. The control system 150 controls the pressure p by sending a command signal 129 to the pressure system 170. Further, the control system 150 may be coupled to both the actuator 132 and the pressure system 170, and/or to components of the actuator 132 and the pressure system 170 within the supply system 110, such that the control system 150 is configured to control the actuator 132 and the pressure system 170.

The control system 150 includes an electronic processor module 154, an electronic storage device 156, and an I/O interface 158. The electronic processor module 154 includes one or more processors (such as general purpose or special purpose microprocessors, and any one or more processors of any kind of digital computer) adapted for executing a computer program. Generally, an electronic processor receives instructions and data from a read-only memory, a Random Access Memory (RAM), or both. The electronic processor module 154 may include any type of electronic processor. One or more of the electronic processors of electronic processor module 154 execute command signal instructions stored on electronic storage 156. The command signals instruct the formation of control command signals 129.

The electronic storage 156 may be volatile memory, such as RAM, or non-volatile memory. In some implementations, the electronic storage 156 includes non-volatile and volatile portions or components. The electronic storage 156 may store data and information used in the operation of the control system 150. For example, the electronic storage 156 may store information that associates the initial target shape with the morphology of the final target.

The electronic storage 156 may also store instructions, such as command signal instructions, as a set of instructions or a computer program that, when executed, cause the electronic processor module 154 to generate the command signals 129 and communicate with the supply system 110. In another example, the electronic storage 156 may store instructions that, when executed, cause the control system 150 to interact with a separate machine. For example, the control system 150 may interact with other EUV light sources located in the same apparatus or facility.

I/O interface 158 is any kind of interface that allows control system 150 to exchange data and signals with an operator, light source 108_1, one or more components of light source 108_1, lithographic apparatus 199, and/or an automated process running on another electronic device. I/O interface 158 may include one or more of a visual display, a keyboard, and a communications interface, such as a parallel port, a Universal Serial Bus (USB) connection, and/or any type of network interface, such as, for example, Ethernet. I/O interface 158 may also allow communication without physical contact over, for example, an IEEE 802.11, Bluetooth, or Near Field Communication (NFC) connection.

The EUV light source 100 may also include a sensor system 130, the sensor system 130 providing a signal 157 to the control system 150, the signal 157 including data related to the light 197 or the EUV light 193. The sensor system 130 includes a sensor 135 capable of detecting one or more wavelengths of light 197. The sensor 135 may be any sensor capable of detecting or sensing the presence of any of the wavelengths in the light 197. Thus, the sensor 135 may be a sensor capable of detecting EUV light, or a sensor capable of detecting one or more wavelengths of out-of-band light. In implementations including the sensor system 130, the instructions stored on the electronic storage 156 may include instructions that, when executed, analyze the signal 157 from the sensor system 130 and use information about the light 197 to notify of an adjustment to the initial shape of the target in the stream 121.

Fig. 2 is a block diagram of an EUV light source 200 as part of an EUV lithography system 201. The EUV light source 200 is another example of an EUV light source. EUV light source 200 is the same as EUV light source 100 (fig. 1) except that EUV light source 200 uses a third light pulse 204_3 to control the initial shape of initial target 121 p.

The third light pulse 204_3 is part of the light beam 206_3, which light beam 206_3 is generated by the light source 208_3 and directed to the target region 224_3 by the beam delivery system 205_ 3. Beam delivery system 205_3 is similar to beam delivery systems 105_1 and 105_2, except that the optical elements of beam delivery system 205_3 have spectral characteristics that allow interaction with beam 206_ 3. The target region 224_3 is between the target region 124_2 and the aperture 119. The interaction between the third light pulse 204_3 and the target 221i modifies the geometric properties of the target 221i prior to the interaction with the light pulse 104_ 2. Target 221i is the target in stream 121 (fig. 1). After interacting with pulse 204_3, target 221i drifts toward target region 124_2 along with the other targets in stream 121. Thus, the third light pulse 204_3 is used to control or modify the initial target shape of the target in the stream 121.

The initial target shape may be controlled by controlling the characteristics of the beam 206_ 3. For example, the initial target shape may be controlled by controlling the intensity and/or time distance of the light pulses 204_3 interacting with the target 221 i. Control system 150 is coupled to light source 208_3 and/or beam delivery system 205_3, and control system 150 may control characteristics of light pulse 204_3 (e.g., the intensity of light pulse 204_3 as a function of time) by controlling light source 208_3 and/or beam delivery system 205_ 3. The initial target shape may also be controlled by controlling the positional overlap between the light pulse 204_3 and the target 221i, e.g., the light pulse 204_3 may be directed to strike one side of the target 221i instead of striking the center of the target 221 i.

The wavelength of light pulse 204-3 may be, for example, about 200nm to about 10 μm. Beam delivery system 205_3 is similar to beam delivery systems 205_1 and 205_ 2. Light source 208_3 is similar to light source 208_ 2.

Referring to fig. 3, a flow chart of an example process 300 for controlling CE in an EUV light source is shown. Process 300 may be performed with EUV light source 100 (fig. 1) or EUV light source 200 (fig. 2).

An initial shape of an initial target is determined by controlling components of an EUV light source (310). The initial target shape is the target shape when the target is in the target region 124_2 prior to interaction with the light pulse 104_ 2. To control the initial target shape, the control system 150 may control the target supply system 110 in the EUV light source 100 or 200. The control system 150 may also control the delivery system 205_3 at the light source 208_3 and/or the EUV light source 200. These methods will be discussed in turn below.

In some implementations, the control system 150 controls the target supply system 110 by adjusting the pressure p applied to the target mixture 111 in the reservoir 118. Fig. 4 shows an implementation in which the control system 150 regulates the pressure p. Fig. 4 is a block diagram of an EUV light source 400 at a time just before pulse 404_2 (which is a pulse of beam 106_ 2) interacts with the initial target 421p and during or shortly after a plasma generating event that forms an EUV emitting plasma 496. In the example of fig. 4, the stream 121 includes targets 421_ a, 421_ b and an initial target 421 p. The targets 421_ a, 421_ b, and 421p travel from the aperture 119 to the target region 124_2 along a trajectory that is generally in the x-direction.

As described above, the target mixture 111 is released from the orifice as a jet 125, and the jet 125 splits into individual targets, each separated from adjacent targets by a distance 423 along the direction of travel (the x-direction in this example). Distance 423 affects the initial shape of the target in stream 121. The EUV light source 100 periodically generates an exposure beam 198 so that the substrate 195 can be rapidly exposed. Accordingly, plasma generation events occur periodically during operation of the EUV light source. The plasma 496 and/or other matter formed by the plasma 496 or associated with the plasma 496 is in the vacuum chamber 109 while the target in the stream 121 travels toward the target region 124_ 2. The plasma 196 and/or other species interact with the target in the stream 121 and may change the initial shape of the target. Other materials formed by the plasma 496 or associated with the plasma 496 may include, for example, ions emitted from the plasma 496, light emitted by the plasma 496, and scattered light (e.g., scattered light from the main pulse 104_1 and/or the pre-pulse 104_ 2).

The strength of the interaction between the plasma 496 and/or other substances depends on the distance between the target to be shaped and the target region 124_1 and the amount of time that has elapsed since the plasma generating event. Thus, increasing distance 423 may reduce the amount of shaping caused by interaction with plasma 496, and decreasing distance 423 may increase the amount of shaping caused by interaction with plasma 196. Increasing the pressure p may increase the velocity of the target in the flow 121 and increase the distance 423. Reducing the pressure p may reduce the velocity of the target in the flow 121 and reduce the distance 423. In simplified form and without taking into account the pressure drop at the nozzle, the relationship between pressure p and distance 423 is shown in equation (1):

where d is the distance between the targets (distance 423 in the example of fig. 4), T is the generation period of EUV light 193 (the inverse of the frequency at which pulses of EUV light are provided to output 199), p is the pressure applied to reservoir 118, and ρ is the density of target material 111.

To control the pressure p, the control system 150 generates a command signal 129 that is provided to the pressure system 170. In these implementations, the control system 150 generates a command signal 129, and the command signal 129 is provided to the pressure controller 170 to control the pressure p. For example, the command signal 129 indicates the desired pressure p 'and provides a command to the pressure system 170 that causes the pressure system to apply the desired pressure p' to the target material 111 in the reservoir 118. The desired pressure p' may be a relatively small change in pressure p. For example, the desired pressure p' may be a percentage change in pressure p of 0.1% or less.

The desired pressure p' may be determined based on, for example, a look-up table or database stored on the electronic storage device 156. The look-up table may include information related to conditions under which the EUV light source 100 is used. The initial target shape corresponding to the optimal CE depends on the characteristics (e.g., shape and density) of the modified target 121 m. For example, in implementations where pulse 404_2 has a wavelength of about 1 μm and a duration of about 10 to 100ns, the modified target 121m is generally disk-shaped with a maximum spatial extent in the xy plane. In implementations where the pulse 404_2 has a wavelength of about 1 μm and a duration of about 10 to 100ps, the modified target 121m is a cloud or fog of particles and other matter. Thus, the shape and density of the modified target 121m depends on the characteristics of the pulse 404_ 2. The optimal initial target shape depends on the characteristics of the pulse 404_2 and the desired morphology of the final target. Thus, the lookup table may store information that associates characteristics (e.g., duration) of the pulse 404_2 with the initial target shape and the corresponding distance 423 to achieve the initial shape. The desired pressure p' may be stored in association with characteristics of the pulse 404_2, corresponding initial target shapes for those characteristics, and the distance 423.

In response to receiving the command signal 129, the pressure system 170 activates pumps, valves, and other devices to change the pressure p to the requested value. In some implementations, the pressure system 170 includes a pressure sensor that measures a value of the pressure p, and the measured pressure p is compared to a desired pressure before the control system 150 provides the command signal 129. For example, the pressure system 170 may provide the value of the applied pressure p (or an indication of the value of the applied pressure p) to the control system 150 via the data link 152, or the control system 150 may retrieve the value of the pressure p from the pressure system 170.

Thus, the initial target shape may be determined by controlling the pressure system 170 as a component of the EUV light source 100.

In some implementations, the initial target shape is determined by controlling the actuator 132. The actuator 132 is part of the target supply system 110 and is therefore also a component of the EUV light source 100. Fig. 5 is a block diagram of an EUV light source 500. The EUV light source 500 is an example implementation of the EUV light source 100 in which the control system 150 is coupled to the actuator 132 via a data link 152. The control system 150 controls the actuator 132 to determine the initial target shape.

As described above, the motion of actuator 132 generates pressure waves in target mixture 111 and breaks up jet 125 into targets that constitute stream 121. The frequency at which the actuator 132 is vibrated or otherwise actuated determines various characteristics of the target in the flow 121. For example, the vibration of the actuator 132 may be used to determine the rate at which the target in the stream 121 reaches the target region 124_2 and the shape of the target.

To determine the initial shape of the target by controlling the actuator 132, the control system 150 provides a modulated command signal 129 to the actuator 132. The motion of the actuator 132 is used to control the characteristics of the target in the flow 121. As described above, the movement of the actuator 132 modulates the target material 111 in the target supply system 110 such that the jet 125 splits into individual targets. The frequency at which the actuator 132 is vibrated determines the characteristics of the target in the stream 121, including the initial shape of the target.

The control system 150 provides a command signal 129 to the actuator 132. The command signal includes information that causes an actuation signal having components of at least a first frequency and a second frequency to be applied to the actuator 132. The actuator 132 may be, for example, a piezoelectric actuator. In these implementations, the command signal 129 is a voltage signal that includes two different frequency components or information that causes a device associated with the actuator 132 to generate and apply two different frequency voltages to the actuator 132. In response to application of the voltage signal, the actuator 132 vibrates at a first frequency and a second frequency. The control system 150 may include a function generator that generates a voltage waveform having an amplitude sufficient to move the modulator 132 when it is applied to the modulator 132. The frequency of the voltage waveform is controlled by an operator via the I/O interface 158 and/or by instructions stored on the electronic storage device 156.

The first frequency is higher than the second frequency. Vibrating the capillary 114 at a first frequency causes the jet 125 to break up into relatively smaller targets of a desired size and velocity. The second frequency is used to modulate the velocity of the targets in the stream and promote droplet coalescence, thereby forming larger targets, each formed by a plurality of relatively smaller targets. In any given set of targets, different targets travel at different speeds. Targets with higher velocities can coalesce with targets with lower velocities to form larger coalesced targets that constitute stream 121. These larger targets are separated from each other by a distance (e.g., distance 423 of fig. 4) that is greater than the uncoalesced droplets. After coalescence, the target in stream 121 is approximately spherical and has a size of about 30 micrometers (μm).

Additional frequencies may be applied to the actuator 132. Introducing additional spectral components into the actuation signal allows better control of the coalescence process and can be used to determine the initial target shape. For example, in addition to the first and second frequencies, a sine wave having a frequency of, for example, 30 to 100kHz, 40 to 60kHz, or 50kHz may be applied to the actuator 132, and/or one of the first or second frequencies may be adjusted to a different frequency and/or waveform shape so that additional frequency components are applied to the actuator 132. The application of the additional spectral components introduces relative motion between two adjacent coalescing targets such that the two adjacent targets approach each other while traveling toward the target region 124_ 2. Two adjacent targets coalesce to form a new larger target, which is not necessarily spherical. In this manner, the initial shape of the target in the stream 121 reaching the target region 124_2 can be determined by controlling the actuator 132.

Thus, the initial target shape may be determined by controlling the actuator 132.

Referring also to fig. 2, the initial target shape may also be determined by controlling the light source 208_3 and/or the delivery system 205_ 3. As described above, the interaction between the target 221i and the pulse 204_3 can shape the target 221 i. For example, the delivery system 205_3 may include an electro-optic modulator (EOM) that can be controlled to adjust the duration of the pulse 204_3 to control the extent of the target 221p in the xy-plane and/or the y-z-plane. In another example, the delivery system 205_3 may include an optical element, such as, for example, a mirror, that diverts the pulse 204_3 relative to the target region 224_ 3. In these examples, the initial target shape is determined by directing the pulse 204_3 to a particular portion of the target 221 i. For example, the pulse 204_3 may be directed to a portion of the target 221i that is displaced in the X or-X direction relative to the center of the target 221 i.

After the initial target shape is determined, a final target is formed (320). The final target is a collection of target materials that interact with the pulse 104_1 to form a plasma 196. In the example of fig. 1, the final target is modified target 121 m. The final target is formed by interacting the initial target (the target having the initial target shape) with a pre-pulse, which is a pulse in the beam 106_2 (e.g., pulse 104_2 of fig. 1). The interaction between the pre-pulse and the initial target may change the geometric arrangement of target material in the target 121p to form a modified target 121 m.

A plasma generation event is initiated (330). A plasma generation event occurs when the main pulse (e.g., pulse 104_1 of fig. 1) interacts with the final target (e.g., modified target 121m) and forms a plasma 196. The plasma 196 emits light 197. The CE associated with a plasma generation event depends on the amount of energy delivered to the final target by the main pulse and the amount of EUV light emitted from the plasma 196, while the amount of EUV light emitted from the plasma 196 depends on the portion of the target material that is converted to the plasma 196. The morphology of the final target affects the conversion efficiency of the target material, and the morphology of the final target is controlled by determining the initial target shape, as described in (310). Accordingly, CE may be controlled by controlling components of the EUV light source 100 or 200 to determine the initial target shape.

Fig. 6A-6D show experimental data associated with an initial target shape.

Fig. 6A is a matrix of 21 different shadowgrams associating a final target morphology with different initial target shapes. In the example shown in FIG. 6A, the pre-pulse has an energy of 2mJ to 3mJ, a wavelength of 1.064 μm, and a duration of 10 ns.

The shadow maps are arranged in columns a to G, each of which includes one shadow map in each of rows 1 to 3. Each shaded image shows the initial target shape at the bottom left, and also shows the final target. The initial target shape is characterized by a ratio of a length along the x-direction to a length along the z-direction. The initial target shape is different in each of columns a through G. The shadowgraph in column a was created using an initial target shape with a ratio of about 0.6. The ratio of the initial target shapes increases from column a to column G. The shadowgraph in column G was created using an initial target shape with a ratio of 1.8. The initial target shape is substantially oblate (in the x-direction) in column a and prolate (in the x-direction) in column G. The x direction and the z direction in fig. 6A and 6B are the same as in fig. 1. The three shadowgraphs in rows 1 to 3 in each of columns a to G have the same initial target shape and show data collected at three different times.

As shown by comparing the data column by column, the morphology of the final target varied with the original target shape. Furthermore, as is evident by comparing the shadowgrams within the columns, the morphology of the final target formed from the primary target having a particular primary target shape is fairly consistent. The data shown in figure 6A indicate that the morphology of the final target depends on the initial target shape.

FIG. 6B is a shaded matrix showing the results of a similar experiment, where the pre-pulse has an energy of 2mJ to 3mJ, a wavelength of 1.064 μm, and a duration of 12 ps. The results again show that the morphology of the final target created from a particular target shape is quite consistent, indicating that the morphology of the final target depends on the initial target shape.

Fig. 6C shows the measured CE (%) as a function of the ratio of x and z lengths for a main pulse with 5 different base energies (pedestal energies). The basis is the portion of the main pulse that precedes in time the main portion of the main pulse, but is still part of the main pulse. The CE data shown in fig. 6C is data of a plasma generation event initiated by irradiating the final target with a 1 μm pre-pulse having a duration of 1ns to 100 ns.

The data shown in fig. 6C includes graphs 681, 682, 683, 684, 695, which represent CE (%) for base energies of 0 millijoules (mJ), 0.5mJ, 1mJ, 1.5mJ, and 2mJ, respectively, as a function of the initial target shape ratio. Reviewing figures 681 to 685 together reveals that CEs as a function of initial target shape ratios have similar distributions for all base energies. This indicates that CE is affected by the initial target shape, independent of the underlying energy. Graphs 681 through 685 show that a ratio of approximately 1 yields the best CE for the test conditions, regardless of the base energy.

Fig. 6D shows the measured CE (%) as a function of the initial target size (μm) for six different initial target shapes. In fig. 6D, the six different initial target shapes are six different initial target shape ratios, and CE (%) is plotted as a function of the size of the initial target in the direction of target travel (e.g., the X-direction of fig. 1).

CE was used for plasma generation events initiated by irradiating the final target with a 1.064 μm pre-pulse of 12ps duration. Fig. 6D includes graphs 691, 692, 693, 694, 695, 696, which represent the CE of the final target created from the initial targets with initial target shape ratios of 0.6, 0.8, 1.0, 1.2, 1.4, and 1.6, respectively. The primary target with a target shape ratio of 1.0 is a substantially spherical target and is therefore an undistorted target or a target with a primary shape that is not controlled by a process, such as process 300. As shown in fig. 6D, CE depends on the initial target shape. In particular, for relatively large targets (e.g., greater than about 650 μm), an undistorted primary target will not produce the highest CD. Thus, by determining the initial target shape by process 300, performance improvements may be achieved.

Fig. 7A is a block diagram of a lithography system 700 including a source collector module SO. Lithography system 700 is an example of lithography system 101. The lithography system 700 further includes: an illumination system IL configured to condition a radiation beam B. The radiation beam B may be an EUV beam emitted from the source collector module SO. The lithographic system 700 also includes a support structure MT constructed to support the patterning device MA. The support structure MT may be, for example, a mask table and the patterning device MA may be, for example, a mask or a reticle. When the radiation beam B interacts with the patterning device MA, a spatial pattern associated with the patterning device MA is imparted to the radiation beam B. The support structure MT is coupled to a first positioner PM configured to position the patterning device MA. Further, the system 700 includes a substrate table WT constructed to hold a substrate W, which may be, for example, a resist-coated wafer. The substrate table WT is connected to a second positioner PW configured to position the substrate W. The system 700 further comprises a projection system PS configured to project the patterned radiation beam E (also referred to as exposure light E or exposure beam E) onto a target portion C of the substrate W. The target portion C may be any portion of the substrate W. As shown in fig. 7A, the substrate W includes a plurality of dies D and the target portion C includes more than one die D.

The illumination system IL includes optical components for directing, shaping, and/or controlling the radiation beam B and the exposure light E. The optical components may include refractive, reflective, magnetic, electromagnetic, electrostatic or any other type of optical component.

The support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA, the design of the lithographic system 700, and/or other conditions (e.g., whether or not the patterning device MA is held in a vacuum environment). The support structure MT may use mechanical, vacuum, electrostatic and/or other clamping techniques to hold the patterning device MA. The support structure MT may be, for example, a frame or a table, which may be fixed or movable. The support structure MT may ensure that the patterning device MA is at a desired position (e.g. with respect to the projection system PS).

Patterning device MA is any device that can be used to impart a pattern to radiation beam B. The patterning device MA may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. In implementations in which patterning device MA is a mask, patterning device MA may be of a binary mask, an alternating phase-shift mask, or an attenuated phase-shift or hybrid mask type, for example. In an implementation in which the patterning device MA is a programmable mirror array, the patterning device MA comprises a matrix arrangement of mirrors, each of which can be individually tilted so that each mirror can reflect the radiation beam B in a different direction, independent of the direction in which the radiation beam B is reflected by other mirrors in the matrix. The pattern imparted to the incident light is determined by the position of the various mirrors in the matrix. The pattern may correspond to a particular functional layer in a device created in the target portion C of the substrate W. For example, the pattern may correspond to electronic features that together form an integrated circuit.

The projection system PS comprises optical components that direct the exposure light E to the target portion C. The optical components of the projection system PS can be refractive, reflective, magnetic, electromagnetic, electrostatic and/or other types of optical components adapted to the exposure radiation being used, or other factors such as the use of a vacuum. Furthermore, it may be desirable to use vacuum for EUV radiation, as the gas may absorb EUV radiation. A vacuum environment can thus be provided with the aid of the vacuum wall and the vacuum pump.

In the example of fig. 7A and 7B, the system 700 is of a reflective type comprising reflective optical components and a reflective patterning device MA. The lithography system 700 may be of a type having two (dual stage) or more substrate tables (and/or two or more patterning device tables). In such multiple machines, additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.

The illumination system IL receives a beam B of euv radiation from a source collector module SO. EUV light sources 100 (fig. 1), 200A (fig. 2A), and 200B (fig. 2B), and 800 (fig. 8) are examples of source collector modules SO.

The illumination system IL may include an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as outer σ and inner σ, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illumination system IL may comprise various other components, such as a facet field and a pupil mirror arrangement. The illumination system IL may be used to condition the radiation beam B to have a desired uniformity and intensity distribution in its cross-section.

The radiation beam B interacts with the patterning device MA such that a pattern is imparted to the radiation beam B. The radiation beam B is reflected from the patterning device MA, which has a pattern imparted by the exposure light E. The exposure light E passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and second position sensor PS2, the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor PS1 can be used to accurately position the patterning device (e.g. mask) MA with respect to the path of the radiation beam B. The positioning sensors PS1 and PS2 may be, for example, interferometric devices, linear encoders, and/or capacitive sensors. Patterning device MA and substrate W may be aligned using patterning device alignment marks M1, M2 and substrate alignment marks P1, P2.

The lithography system 700 can be used in at least one of the following modes: (1) step mode, (2) scan mode, or (3) third or other modes. In step mode, the support structure MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam B is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In scan mode, the support structure MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam B is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT may be determined by the (de-) magnification and image reversal characteristics of the projection system PS. In a third or other mode, the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, a pulsed radiation source is typically employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above. Combinations and/or variations of these three modes of use and/or entirely different modes of use may also be employed.

FIG. 7B shows an implementation of the lithographic system 700 including the source collector module SO, the illumination system IL and the projection system PS in more detail. The source collector module SO comprises a vacuum environment. Each of the systems IL and PS also includes a vacuum environment. An EUV radiation emitting plasma is formed within the source collector module SO. The source collector module SO focuses EUV radiation emitted from the plasma to an intermediate focus IF such that a beam of radiation B (760) is provided to the illumination system IL.

The radiation beam B passes through an illumination system IL, which in the example of fig. 7B comprises a facet field mirror device 22 and a facet pupil mirror device 24. These devices form a so-called "fly's eye" illuminator that is arranged to provide a desired angular distribution of the radiation beam 21 at the patterning device MA and to maintain uniformity of the radiation intensity at the patterning device MA. After beam B is reflected at patterning device MA, exposure light E (patterning beam B) is formed and exposure light E (26) is imaged by projection system PS onto substrate W via reflective elements 28, 30. Furthermore, the exposure light E interacts with the slits shaping the exposure light E such that the exposure light E has a rectangular cross section in a plane perpendicular to the propagation direction. To expose a target portion C on the substrate W, the source collector module SO generates pulses of radiation to form a beam of radiation B, while the substrate table WT and patterning device table MT perform synchronous movements to scan a pattern on the patterning device MA with rectangular exposure light E.

Each system IL and PS is disposed in its own vacuum or near-vacuum environment, which is defined by an enclosed structure. There may generally be more elements in the illumination system IL and the projection system PS than shown. Further, there may be more mirrors than shown. For example, one to six additional reflective elements may be present in the illumination system IL and/or the projection system PS, in addition to those shown in FIG. 7B.

Many of the additional components used in the operation of the source collector module and the lithography system 700 as a whole are present in a typical apparatus, although not shown here. These include arrangements for reducing or mitigating the effects of contamination within the enclosed vacuum, for example to prevent deposits of fuel material from damaging or impairing the performance of the trap 3 and other optics. Other features that are present but not described in detail are all sensors, controllers and actuators that participate in the control of the various components and subsystems of the lithography system 700.

Referring to fig. 8, an implementation of an LPP EUV light source 800 is shown. The light source 800 may be used as a source collector module SO in the lithography system 700. Further, the light source 108_2 of fig. 1 and 2 may be part of driving the laser 815.

The LPP EUV light source 800 is formed by irradiating a target mixture 814 at a plasma formation region 805 with an amplified light beam 810, the amplified light beam 810 traveling along a beam path toward the target mixture 814. The target material of the target in stream 121 may be or include a target mixture 814. Plasma formation region 805 is within interior 807 of vacuum chamber 830. When the amplified light beam 810 strikes the target mixture 814, the target material within the target mixture 814 is converted to a plasma state having elements with emission lines in the EUV range. The generated plasma has certain characteristics that depend on the composition of the target material within the target mixture 814. These characteristics may include the wavelength of EUV light generated by the plasma and the type and amount of debris released from the plasma.

Light source 800 includes a driven laser system 815 that generates an amplified light beam 810 due to population inversion within one or more gain media of laser system 815. Light source 800 includes a beam delivery system between laser system 815 and plasma formation region 805, which includes a beam delivery system 820 and a focusing assembly 822. The beam delivery system 820 receives the amplified light beam 810 from the laser system 815, and diverts and modifies the amplified light beam 810 as needed and outputs the amplified light beam 810 to the focusing assembly 822. The focusing assembly 822 receives the amplified light beam 810 and focuses the light beam 810 to the plasma formation region 805.

In some implementations, the laser system 815 may include one or more optical amplifiers, lasers, and/or lamps for providing one or more main pulses, and in some cases, one or more pre-pulses. Each optical amplifier includes a gain medium capable of optically amplifying a desired wavelength with high gain, an excitation source, and internal optics. The optical amplifier may or may not have a laser mirror or other feedback device that forms the laser cavity. Thus, even without a laser cavity, laser system 815 produces an amplified light beam 810 due to population inversion in the gain medium of the laser amplifier. Furthermore, if a laser cavity is present to provide sufficient feedback to laser system 815, laser system 815 can produce amplified light beam 810 as a coherent laser beam. The term "amplified light beam" includes one or more of the following: light from the laser system 815 that is only amplified but not necessarily coherent laser oscillation and light from the laser system 815 that is amplified and is also coherent laser oscillation.

The optical amplifier in the laser system 815 may include a fill gas comprising CO as the gain medium₂And light of a wavelength between about 9100 to about 11000nm, and particularly about 10600nm, can be amplified with a gain of 800 times or more. Suitable amplifiers and lasers for laser system 815 may include pulsed laser devices, e.g., pulsed, gas discharge CO generating radiation at about 9300nm or about 10600nm₂Laser devices, for example using DC or RF excitation, operate at relatively high power (e.g., 10kW or more) and high pulse repetition rates (e.g., 40kHz or more). The pulse repetition rate may be, for example, 50 kHz. LaserThe optical amplifier in the optical system 815 may also include a cooling system, such as water, that may be used when operating the laser system 815 at higher power.

Light source 800 includes collector mirror 835, collector mirror 835 having an aperture 840 to allow amplified light beam 810 to pass through and reach plasma formation region 805. Collector mirror 835 may be, for example, an ellipsoidal mirror having a primary focus at plasma formation region 805 and a secondary focus (also referred to as an intermediate focus) at intermediate position 845, where EUV light may be output from light source 800 and may be input to, for example, an integrated circuit lithography tool (not shown). The light source 800 can also include an open-ended hollow cone-shaped shroud 850 (e.g., a gas cone), the shroud 850 tapering from the collector mirror 835 toward the plasma formation region 805 to reduce the amount of plasma-generated debris entering the focusing assembly 822 and/or the beam delivery system 820, while allowing the amplified light beam 810 to reach the plasma formation region 805. To this end, a gas flow directed towards the plasma formation region 805 may be provided in the shield.

Light source 800 may also include a master controller 855, which master controller 855 is connected to droplet position detection feedback system 856, laser control system 857, and beam control system 858. The light source 800 may include one or more target or droplet imagers 860, the target or droplet imagers 860 providing an output indicative of the position of the droplet, e.g., relative to the plasma formation region 805, and providing the output to a droplet position detection feedback system 856, which may, for example, calculate the droplet position and trajectory from which droplet position errors may be calculated on a droplet-by-droplet or average basis. Thus, droplet position detection feedback system 856 provides the droplet position error as an input to master controller 855. Thus, master controller 855 may provide laser position, orientation, and timing correction signals, which may be used to control laser timing circuitry, for example, to laser control system 857 and/or master controller 855 may provide the above signals to beam control system 858 to control the amplified beam position and shaping of beam delivery system 820 to change the position and/or focus power of the beam focus within chamber 830.

The supply system 825 includes a target material delivery control system 826 operable, in response to a signal from the main controller 855, to modify the release point of a droplet released by the target material supply device 827, for example, to correct for errors in the droplet reaching the desired plasma formation region 805.

Further, the light source 800 may include light source detectors 865 and 870, the light source detectors 865 and 870 measuring one or more EUV light parameters including, but not limited to, pulse energy, energy distribution as a function of wavelength, energy within a particular wavelength band, energy outside a particular wavelength band, and angular distribution of EUV intensity and/or average power. Light source detector 865 generates a feedback signal for use by master controller 855. For example, the feedback signal may indicate errors in parameters such as timing and focusing of the laser pulses to properly intercept the droplet at the correct position and time for efficient and effective EUV light production.

Light source 800 may also include a guiding laser 875 that may be used to align various portions of light source 800 or to help divert the amplified light beam 810 to plasma formation region 705. In association with the guiding laser 875, the light source 800 includes a metrology system 824, the metrology system 824 being positioned within the focusing assembly 822 to sample the portion of light from the guiding laser 875 and the amplified light beam 810. In other implementations, the metrology system 824 is placed within the beam delivery system 820. Metrology system 824 can include optical elements that sample or redirect a subset of the light, made of any material that can withstand the power of the guided laser beam and amplified light beam 810. The beam analysis system is formed by metrology system 824 and master controller 855 because master controller 855 analyzes the sampled light from guide laser 875 and uses this information to adjust components within focusing assembly 822 through beam control system 858.

Thus, in summary, the light source 800 produces an amplified light beam 810 directed along a beam path to irradiate the target mixture 814 at the plasma formation region 805 to convert target material within the mixture 814 to a plasma that emits light in the EUV range. The amplified light beam 810 operates at a specific wavelength (also referred to as the drive laser wavelength) determined based on the design and characteristics of the laser system 815. Additionally, the amplified light beam 810 may be a laser beam when the target material provides sufficient feedback into the laser system 815 to generate a coherent laser, or if the drive laser system 815 includes suitable optical feedback to form a laser cavity.

Other implementations are within the scope of the following claims.

Other aspects of the invention are set forth in the following numbered clauses.

1. An Extreme Ultraviolet (EUV) light source comprising:

a vacuum vessel;

a target material supply system configured to supply a target to an interior of the vacuum vessel, the target including at least a first target, wherein the first target has an initial shape at an initial target region in the vacuum vessel;

a first light source configured to provide a first light beam to a first target region in the vacuum vessel, the first light beam configured to modify an initial shape of an initial target to form a modified target; and

a second light source configured to provide a second beam of light to a second target region in the vacuum vessel, the second target region configured to receive the modified target, the second beam of light configured to interact with the modified target and convert at least some of the target material in the modified target to a plasma that emits EUV light, wherein

The initial shape of the first target is controlled to thereby control the amount of plasma generated by the interaction between the second beam and the modified target.

2. The EUV light source according to clause 1, wherein the target material comprises a molten metal, and the supply system comprises:

a reservoir configured to hold a target material;

a nozzle configured to fluidly couple to the reservoir and launch the target into an interior of the vacuum vessel; and

an actuator mechanically coupled to the nozzle.

3. The EUV light source according to clause 2, wherein the initial shape of the first target at the initial target region is controlled by vibrating the nozzle at more than one frequency with the actuator.

4. The EUV light source according to clause 2, wherein the spacing between the first target and the second target is controlled by adjusting the pressure applied to the target material in the reservoir, and the second target is supplied by the target supply system before the first target.

5. The EUV light source of clause 4, wherein the initial shape of the first target is based on a controlled spacing between the first target and the second target.

6. The EUV light source according to clause 1, further comprising a third light source configured to provide a third light beam to a third target region, and wherein the third target region is configured to receive the first target and an initial shape of the first target at the initial target region is controlled by interacting the first target with the third light beam.

7. The EUV light source according to clause 6, wherein the third target region is closer to the target material supply system than the first target region and the second target region.

8. The EUV light source according to clause 1, wherein the initial shape of the first target at the initial target region comprises oblate spheroids of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and a ratio of the first length to the second length is between 0.6 and 0.8.

9. The EUV light source according to clause 1, wherein the initial shape of the first target at the initial target region comprises oblate spheroids of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and a ratio of the first length to the second length is between 0.75 and 0.9.

10. The EUV light source according to clause 1, wherein the initial shape of the first target at the initial target region comprises oblate spheroids of molten metal having a first length along a first direction and a second length along a second direction perpendicular to the first direction, and a ratio of the first length to the second length is about 0.8.

11. The EUV light source according to clause 1, wherein the modified target has a morphology determined by an initial shape of the first target at the initial target region, the morphology describing the shape of the target and/or the target material density in three dimensions.

12. The EUV light source according to clause 11, wherein the modified target comprises a lateral length in one of three dimensions, the lateral length depending on the distance between the first target region and the second target region.

13. The EUV light source according to clause 1, wherein the initial shape of the first target material droplet is controlled to thereby control the amount of plasma generated by the interaction between the second beam of light and the modified target comprises: the initial shape of the first target material is controlled to thereby control the Conversion Efficiency (CE) of the EUV light source, CE being the ratio of the energy supplied to the modified target to the energy emitted from the plasma as EUV light.

14. The EUV light source according to clause 1, wherein the initial target region is between the target material supply system and the first target region.

15. A method of controlling Conversion Efficiency (CE) in an Extreme Ultraviolet (EUV) light source, the method comprising:

determining an initial shape of an initial target by controlling components of the EUV light source;

interacting the pre-pulsed light beam with the initial target to form a modified target; and

interacting the primary light pulse with the modified target to produce a plasma that emits EUV light, wherein the interaction between the modified target and the primary light pulse is associated with a Conversion Efficiency (CE), the CE is a ratio of energy supplied to the modified target to energy emitted from the plasma as EUV light, and the CE is controlled based on the determined initial shape of the initial target.

16. The method according to clause 15, wherein the component of the EUV light source comprises a reservoir as part of the target material supply system, and

determining the initial shape of the initial target comprises: the amount of pressure on the molten target material in the reservoir is controlled prior to generating the initial target by the target supply system.

17. The method according to clause 16, wherein controlling the amount of pressure on the molten target material in the reservoir controls a spacing between the initial target and another target, and the initial shape of the initial target is based on the spacing.

18. The method according to clause 15, wherein the component of the EUV light source comprises an actuator coupled to the capillary of the target material supply system, and

determining the initial shape of the initial target comprises: the actuator is controlled such that the actuator vibrates the tube at more than one frequency.

19. The method according to clause 18, wherein controlling the actuator causes the actuator to vibrate the tube at more than one frequency to generate the stream of coalescing targets from the jet of target material, and the method further comprises adjusting one of the more than one frequency such that two of the coalescing targets merge into a merge target, and the initial target is the merge target.

20. The method according to clause 15, wherein the component of the EUV light source comprises a target material supply system configured to supply an initial target and at least a second target, and

determining the initial shape of the initial target comprises: controlling the target material supply system such that a spacing between the primary target and a secondary target is adjusted, the secondary target being supplied by the target supply system prior to the primary target.

21. The method according to clause 15, wherein the component of the EUV light source comprises an initial light source configured to provide an initial beam of light, and

determining the initial shape of the initial target comprises: controlling the primary light source such that the primary light beam interacts with the primary target, and wherein the primary shape of the primary target is determined at least in part by interacting the primary target with the primary light beam.