阅读说明：本技术 一种磷化铟晶体的快速生长装置及生长方法 (Rapid growth device and growth method of indium phosphide crystal ) 是由 潘功寰 于 2021-07-13 设计创作，主要内容包括：本发明涉及一种磷化铟晶体的快速生长装置及生长方法,包括：生长筒、入料机构以及过滤盘；所述生长筒顶部设置有护板,所述护板内侧设置有抵持件,所述抵持件端部固定连接有过滤盘,所述过滤盘上方设置有入料机构,所述过滤盘底部设置有进料筒,所述进料筒底部设置有转盘,所述转盘设置在所述生长筒内侧,所述转盘与所述生长筒同轴心设置；所述生长筒外侧设置有防护架,所述防护架底部设置有垫板,所述垫板底部设置有支架,所述支架上设置有电机,所述电机一端配合连接至转盘,所述生长筒内壁设置有加热件,所述生长筒底部设置有出料口,通过竖直方向层叠方式设置的入料机构与过滤盘能够将磷化铟晶体中的杂质进行过滤,使得进入进料筒内的磷化铟晶体的纯度较高,保证磷化铟晶体的高纯度。(The invention relates to a rapid growth device and a growth method of an indium phosphide crystal, which comprise the following steps: the device comprises a growth cylinder, a feeding mechanism and a filter disc; the top of the growth cylinder is provided with a protection plate, the inner side of the protection plate is provided with a supporting part, the end part of the supporting part is fixedly connected with a filter disc, a feeding mechanism is arranged above the filter disc, the bottom of the filter disc is provided with a feeding cylinder, the bottom of the feeding cylinder is provided with a rotary disc, the rotary disc is arranged on the inner side of the growth cylinder, and the rotary disc and the growth cylinder are coaxially arranged; the utility model discloses a high-purity indium phosphide crystal growth device, including growth section of thick bamboo, protection frame, pan feeding mechanism, filter disc, feeding mechanism, growth section of thick bamboo, protection frame outside is provided with the protection frame, protection frame bottom is provided with the backing plate, the backing plate bottom is provided with the support, be provided with the motor on the support, motor one end cooperation is connected to the carousel, growth section of thick bamboo inner wall is provided with heating member, growth bobbin base portion is provided with the discharge gate, can filter the impurity in the indium phosphide crystal through pan feeding mechanism and the range upon range of mode setting of vertical direction for the purity of the indium phosphide crystal that gets into in the feeding section of thick bamboo is higher, guarantees the high purity of indium phosphide crystal.)

1. An apparatus for rapid growth of an indium phosphide crystal, comprising: the device comprises a growth cylinder, a feeding mechanism and a filter disc; it is characterized in that the preparation method is characterized in that,

the top of the growth cylinder is provided with a protection plate, the inner side of the protection plate is provided with a supporting part, the end part of the supporting part is fixedly connected with a filter disc, a feeding mechanism is arranged above the filter disc, the bottom of the filter disc is provided with a feeding cylinder, the bottom of the feeding cylinder is provided with a rotary disc, the rotary disc is arranged on the inner side of the growth cylinder, and the rotary disc and the growth cylinder are coaxially arranged;

the outer side of the growth cylinder is provided with a protection frame, the bottom of the protection frame is provided with a base plate, the bottom of the base plate is provided with a support, the support is provided with a motor, one end of the motor is connected to the rotary table in a matched mode, the inner wall of the growth cylinder is provided with a heating element, and the bottom of the growth cylinder is provided with a discharge port.

2. The apparatus for rapid growth of an indium phosphide crystal as defined in claim 1, wherein support columns are provided at four corners of the bottom of the frame.

3. The apparatus for rapid growth of an indium phosphide crystal as defined in claim 1, wherein the backing plate is fixed to the support by means of bolts.

4. The apparatus as claimed in claim 1, wherein the heating elements are distributed in a spiral manner.

5. The rapid growth device of indium phosphide crystals as claimed in claim 1, wherein a shaft coupling is arranged at one end of a rotating shaft of the motor, a speed reducer is connected to one end of the shaft coupling, and the speed reducer is connected to the rotating disc in a matching manner.

6. The rapid growth device of an indium phosphide crystal as claimed in claim 1, wherein a plurality of temperature sensors are arranged on the inner wall of the growth cylinder.

7. The rapid growth device for indium phosphide crystals as claimed in claim 6, wherein a plurality of ribs are arranged on the top of the protective frame along the circumferential direction, and the ribs are used for fixing the growth cylinder and the protective frame.

8. A growth method of an indium phosphide crystal, which is applied to the rapid growth device of an indium phosphide crystal as set forth in any one of claims 1 to 7, is characterized by comprising the following steps:

putting the indium phosphide crystals into a feeding mechanism, filtering the indium phosphide crystals by a filter disc, feeding the indium phosphide crystals after impurity filtration into a turntable through a feeding barrel,

heating the inner space of the growth cylinder by a heating element, and controlling the turntable to rotate at a constant speed by a motor when the temperature reaches a preset temperature;

in the rotating process of the turntable, raw materials in the turntable are uniformly heated, and the rapid growth of indium phosphide crystals is promoted.

9. The method as claimed in claim 8, wherein a dopant is added into the feeding mechanism during the heating of the inner space of the growth cylinder by the heating element, and the dopant is sulfur.

10. The method for growing the indium phosphide crystal as claimed in claim 8, wherein the turntable is controlled by a motor to rotate at a constant speed when the temperature reaches a predetermined temperature, specifically, the temperature is slowly raised by a heating element, and the temperature is kept constant when the temperature is raised to the melting point temperature of the raw material.

Technical Field

The invention relates to a rapid growth device, in particular to a rapid growth device and a rapid growth method for an indium phosphide crystal.

Background

Indium phosphide is a chemical substance, is a dark gray crystal with asphalt luster, and the preparation of an indium phosphide single crystal by using a high-pressure single crystal furnace is the most important method, and the dislocation density of the crystal is reduced by using a method of doping electronic impurities. Vapor phase epitaxy generally uses disproportionation of In-PCl3-H2 system, In which indium phosphide (99.9999%) and phosphorus trichloride (99.999%) are reacted to grow indium phosphide layer. And (3) placing the quartz reaction tube in a double-temperature-zone electric furnace by vapor phase epitaxy, introducing purified high-purity hydrogen by metering, wherein the hydrogen is also used for diluting phosphorus trichloride, and the linear velocity of the hydrogen passing through the reaction tube is 14cm/min while the bubbler is kept at 0 ℃. The epitaxial growth is carried out in induction stages. In the first stage, a quartz boat containing indium is placed in a source area of an electric furnace, hydrogen is introduced and heated to 700-850 ℃, and then phosphorus trichloride is introduced by the hydrogen and reduced into phosphorus vapor and hydrogen chloride above the indium source. The cadmium hydride reacts with the indium to form indium monochloride vapor that migrates within the tube. Phosphorus dissolves in indium until saturated. In the second stage, the indium source is kept in situ without heating, and the single crystal substrate is placed in the second heating zone of the electric furnace and then heated to 600-750 ℃ under a hydrogen atmosphere. Firstly, introducing phosphorus trichloride into a tube by using hydrogen to perform gas phase corrosion on a substrate, and cleaning the surface of the substrate. Hydrogen gas is then introduced directly into the reaction tube and the source is heated to its supersaturation temperature (which in operation is 100 c above the temperature of the substrate crystal). Then introducing phosphorus trichloride through hydrogen bubbling, and then reacting phosphorus vapor with indium monochloride generated in the source region to deposit and grow an indium phosphide layer on the substrate. And after the epitaxial growth is finished, introducing pure hydrogen into the system, cooling the two temperature zones to room temperature, and taking out the product to obtain the indium phosphide finished product.

Disclosure of Invention

The invention overcomes the defects of the prior art and provides a rapid growth device and a rapid growth method for indium phosphide crystals.

In order to achieve the purpose, the invention adopts the technical scheme that: an apparatus for rapid growth of an indium phosphide crystal, comprising: the device comprises a growth cylinder, a feeding mechanism and a filter disc;

the top of the growth cylinder is provided with a protection plate, the inner side of the protection plate is provided with a supporting part, the end part of the supporting part is fixedly connected with a filter disc, a feeding mechanism is arranged above the filter disc, the bottom of the filter disc is provided with a feeding cylinder, the bottom of the feeding cylinder is provided with a rotary disc, the rotary disc is arranged on the inner side of the growth cylinder, and the rotary disc and the growth cylinder are coaxially arranged;

a protective frame is arranged outside the growth cylinder, a backing plate is arranged at the bottom of the protective frame, a support is arranged at the bottom of the backing plate, a motor is arranged on the support, one end of the motor is connected to the rotary table in a matching way,

the growth section of thick bamboo inner wall is provided with the heating member, growth bobbin base portion is provided with the discharge gate.

In a preferred embodiment of the present invention, support columns are disposed at four corners of the bottom of the support frame.

In a preferred embodiment of the present invention, the pad is fixed to the bracket by bolts.

In a preferred embodiment of the invention, the heating elements are distributed in a spiral manner.

In a preferred embodiment of the present invention, a coupling is disposed at one end of a rotating shaft of the motor, and a speed reducer is connected to one end of the coupling and is connected to the turntable in a matching manner.

In a preferred embodiment of the invention, a plurality of temperature sensors are arranged on the inner wall of the growth cylinder.

In a preferred embodiment of the invention, a plurality of ribs are arranged on the top of the protective frame along the circumferential direction, and the ribs are used for fixing the growth cylinder and the protective frame.

In order to achieve the above purpose, the second technical solution adopted by the present invention is: a growth method of indium phosphide crystal is applied to a rapid growth device of indium phosphide crystal, and comprises the following steps:

putting the indium phosphide crystals into a feeding mechanism, filtering the indium phosphide crystals by a filter disc, feeding the indium phosphide crystals after impurity filtration into a turntable through a feeding barrel,

heating the inner space of the growth cylinder by a heating element, and controlling the turntable to rotate at a constant speed by a motor when the temperature reaches a preset temperature;

in the rotating process of the turntable, raw materials in the turntable are uniformly heated, and the rapid growth of indium phosphide crystals is promoted.

In a preferred embodiment of the invention, a doping agent is added into the feeding mechanism in the process of heating the inner space of the growth cylinder by the heating element, and the doping agent is sulfur.

In a preferred embodiment of the invention, when the temperature reaches the predetermined temperature, the motor controls the turntable to rotate at a constant speed, specifically, the temperature is slowly heated by the heating element and kept constant when the temperature is raised to the melting point temperature of the raw material.

The invention solves the defects in the background technology, and has the following beneficial effects:

(1) the feeding mechanism and the filter disc which are arranged in a vertical direction stacking mode can filter impurities in the indium phosphide crystals, so that the purity of the indium phosphide crystals entering the feeding barrel is high, and the high purity of the indium phosphide crystals is guaranteed.

(2) Through the heating member of spiral structure, and the heating member setting is at a growth section of thick bamboo inner wall, heats the indium phosphide crystal in the carousel through non-contact's mode, and in the heating process, the carousel is rotatory, guarantees that the indium phosphide crystal is heated evenly, improves the growth rate of indium phosphide crystal.

Drawings

The invention is further illustrated with reference to the following figures and examples.

FIG. 1 is a schematic view showing a partial three-dimensional structure of an apparatus for rapid growth of an indium phosphide crystal according to the present invention;

FIG. 2 is a schematic diagram showing the internal structure of the growth cylinder;

FIG. 3 shows a schematic view of the bottom structure of the growth cylinder;

in the figure: 1. feeding mechanism, 2, supporting part, 3, feeding barrel, 4, rib, 5, protective frame, 6, backing plate, 7, support, 8 supporting columns, 9, motor, 10, growing barrel, 11, protective plate, 12, filter disc, 13, rotary disc, 14, coupling, 15, speed reducer, 16 and discharge port

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the scope of the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.

FIG. 1 is a schematic view showing a partial three-dimensional structure of an apparatus and a method for rapid growth of an indium phosphide crystal according to the present invention.

As shown in fig. 1 to 3, a first aspect of the present invention provides an apparatus for rapid growth of an indium phosphide crystal, comprising: a growth cylinder 10, a feeding mechanism 1 and a filter disc 12;

the top of the growth cylinder 10 is provided with a protection plate 11, the inner side of the protection plate 11 is provided with a supporting part 2, the end part of the supporting part 2 is fixedly connected with a filter disc 12, a feeding mechanism 1 is arranged above the filter disc 12, the bottom of the filter disc 12 is provided with a feeding cylinder 3, the bottom of the feeding cylinder 3 is provided with a rotating disc 13, the rotating disc 13 is arranged on the inner side of the growth cylinder 10, and the rotating disc 13 and the growth cylinder 10 are coaxially arranged;

a protective frame 5 is arranged outside the growth cylinder 10, a backing plate 6 is arranged at the bottom of the protective frame 5, a support 7 is arranged at the bottom of the backing plate 6, a motor 9 is arranged on the support 7, one end of the motor 9 is connected to a rotary table 13 in a matching way,

the inner wall of the growth cylinder 10 is provided with a heating element, and the bottom of the growth cylinder 10 is provided with a discharge hole.

According to the embodiment of the invention, support columns 8 are arranged at four corners of the bottom of the support 7.

According to the embodiment of the present invention, the pad 6 is fixed to the bracket 7 by bolts.

According to an embodiment of the invention, the heating elements are distributed in a spiral manner.

According to the embodiment of the invention, one end of a rotating shaft of the motor 9 is provided with a coupler 14, one end of the coupler 14 is connected with a speed reducer 15, and the speed reducer 15 is connected to the rotating disc 13 in a matching manner.

According to the embodiment of the invention, a plurality of temperature sensors are arranged on the inner wall of the growth cylinder 10.

According to the embodiment of the invention, a plurality of ribs 4 are arranged on the top of the protection frame 5 along the circumferential direction, and the ribs 4 are used for fixing the growth cylinder 10 and the protection frame 5.

In order to achieve the above purpose, the second technical solution adopted by the present invention is: a growth method of indium phosphide crystal is applied to a rapid growth device of indium phosphide crystal, and comprises the following steps:

the indium phosphide crystals are put into a feeding mechanism 1, the indium phosphide crystals are filtered by a filter disc 12, the indium phosphide crystals after impurity filtration enter a rotating disc 13 through a feeding cylinder 3,

heating the inner space of the growth cylinder 10 by a heating element, and controlling the rotating disc 13 to rotate at a constant speed by the motor 9 when the temperature reaches a preset temperature;

in the rotating process of the rotating disc 13, the raw materials in the rotating disc 13 are uniformly heated, so that the rapid growth of indium phosphide crystals is promoted.

According to the embodiment of the invention, in the process of heating the inner space of the growth cylinder 10 by the heating element, a doping agent is added into the feeding mechanism 1, and the doping agent is sulfur.

According to the embodiment of the invention, when the temperature reaches the preset temperature, the motor 9 controls the rotating disc 13 to rotate at a constant speed, specifically, the temperature is slowly heated by the heating element and is kept constant when the temperature is raised to the melting point temperature of the raw material.

The feeding mechanism 1 and the filter disc 12 which are arranged in a vertical direction in a stacking mode can filter impurities in the indium phosphide crystals, so that the purity of the indium phosphide crystals entering the feeding barrel 3 is high, and the high purity of the indium phosphide crystals is guaranteed.

Through the heating member of spiral structure, and the heating member setting is at a growth section of thick bamboo 10 inner walls, heats the indium phosphide crystal in carousel 13 through non-contact's mode, and in the heating process, carousel 13 is rotatory, guarantees that the indium phosphide crystal is heated evenly, improves the growth rate of indium phosphide crystal.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.