阅读说明：本技术 硅通孔复合结构的测试系统及测试方法 (Test system and test method for through silicon via composite structure ) 是由 陈思 李凯 杨晓锋 付志伟 施宜军 王宏跃 周斌 于 2021-07-06 设计创作，主要内容包括：本申请涉及硅通孔技术领域,具体公开一种硅通孔复合结构的测试系统及测试方法。系统包括温度变化箱、真空箱、温度监控装置和观测装置,温度变化箱内部温度循环变化；真空箱设置于温度变化箱内,真空箱内用于放置硅通孔复合结构的待测样品；温度监控装置连接真空箱和温度变化箱,用于监测待测样品的温度变化范围,并控制温度变化箱调节内部温度的循环变化状态,以使待测样品的温度在目标温度变化范围内变化；观测装置用于当待测样品的温度在目标温度变化范围内循环变化时,对待测样品的界面状态进行观测。确保待测样品可以在目标温度变化范围内变化,提高测试的准确性。(The application relates to the technical field of through silicon vias, and particularly discloses a test system and a test method for a through silicon via composite structure. The system comprises a temperature change box, a vacuum box, a temperature monitoring device and an observation device, wherein the temperature inside the temperature change box changes circularly; the vacuum box is arranged in the temperature change box and is used for placing a sample to be tested with a through silicon via composite structure; the temperature monitoring device is connected with the vacuum box and the temperature change box and is used for monitoring the temperature change range of the sample to be detected and controlling the temperature change box to adjust the cyclic change state of the internal temperature so as to change the temperature of the sample to be detected within the target temperature change range; the observation device is used for observing the interface state of the sample to be measured when the temperature of the sample to be measured circularly changes within the target temperature change range. The sample to be tested can be ensured to change within the target temperature change range, and the test accuracy is improved.)

1. A test system for a through silicon via composite structure, comprising:

a temperature change box, the internal temperature of which changes cyclically;

the vacuum box is arranged in the temperature change box and is used for placing a sample to be tested with a through silicon via composite structure;

the temperature monitoring device is connected with the vacuum box and the temperature change box and is used for monitoring the temperature change range of the sample to be detected and controlling the temperature change box to adjust the cyclic change state of the internal temperature so as to ensure that the temperature of the sample to be detected changes within the target temperature change range;

and the observation device is used for observing the interface state of the sample to be detected when the temperature of the sample to be detected circularly changes within the target temperature change range.

2. The system for testing the through silicon via composite structure of claim 1, wherein the temperature variation box comprises a box body, a heating device and a refrigerating device, the heating device is used for heating the box body to raise the internal temperature of the box body, and the refrigerating device is used for cooling the box body to lower the internal temperature of the box body.

3. The system for testing the through-silicon-via composite structure of claim 1, wherein the sample to be tested is attached to the inner wall of the vacuum box by a heat conducting element.

4. The system for testing a through silicon via composite structure of claim 3, wherein the thermally conductive element comprises a thermally conductive paste.

5. The system for testing the through silicon via composite structure of claim 1, wherein the vacuum box is connected to a vacuum pump through a vacuum valve, and the vacuum pump is used for vacuumizing a sealed cavity in the vacuum box.

6. The system for testing the through silicon via composite structure of claim 1, wherein the temperature monitoring device comprises a temperature monitor and a temperature probe electrically connected with each other, the temperature probe extends into the vacuum chamber and is used for sensing the temperature of the sample to be tested, the temperature monitor collects sensing data of the temperature probe and controls the temperature change chamber to adjust the internal temperature according to the sensing data, so that the temperature of the sample to be tested changes within a target temperature change range.

7. The system for testing the through silicon via composite structure according to claim 6, wherein the temperature monitor comprises a patrol instrument and an upper computer, the patrol instrument is connected with the temperature probe and used for collecting the sensing data, and the upper computer is connected with the patrol instrument and used for analyzing and processing the sensing data.

8. The system for testing the through silicon via composite structure of claim 1, wherein the observation device comprises a focused ion beam and an electron microscope.

9. A method for testing a through silicon via composite structure is characterized by comprising the following steps:

providing a temperature change box and a vacuum box for placing a sample to be detected with a through silicon via composite structure, and arranging the vacuum box in the temperature change box;

setting a test environment of the temperature change box, wherein the test environment comprises a cyclic change state of the internal temperature;

monitoring the temperature change range of the sample to be detected in the vacuum box, and controlling the temperature change box to adjust the cyclic change state of the internal temperature so as to enable the temperature of the sample to be detected to change within the target temperature change range;

and observing the interface state of the sample to be detected when the temperature of the sample to be detected circularly changes within the target temperature change range.

10. The method for testing a tsv composite structure as claimed in claim 9, wherein before the step of providing a temperature variation box and a vacuum box for placing a sample to be tested of the tsv composite structure and disposing the vacuum box inside the temperature variation box, the method for testing a tsv composite structure further comprises:

and attaching the sample to be tested to the inner wall of the vacuum box through a heat conducting element.

Technical Field

The invention relates to the technical field of through silicon vias, in particular to a test system and a test method of a through silicon via composite structure.

Background

The TSV is a short for Through Silicon Via (Through Silicon Via), and mainly realizes vertical interconnection between chips or wafers by manufacturing a vertical electrical connection channel penetrating Through the chips or wafers, and plays roles in signal conduction, heat transfer and mechanical support. The thin film transistor has the advantages of good electrical performance, low power consumption, high interconnection density, small size, light weight and the like, and is widely applied to various fields.

The typical structure of TSV is a composite structure with a multi-layer material interface filled with electroplated Cu, and the interface structure is Cu/Ta/SiO₂and/Si, and exhibits a certain roughness. In the TSV-Cu/Si interface structure, due to the fact that the Coefficient of Thermal Expansion (CTE) of materials is obviously different, under the condition of temperature circulation, serious thermal mismatch can cause large shear stress and tensile stress to be generated in different material layers in the TSV-Cu/Si interface, and due to the fact that the strength of the interface at the bonding position of the different material layers is weak due to the fact that an electroplating process is adopted, the interface is easily induced to be layered or cracked, electricity leakage occurs among TSVs, and the electro-migration problem of the TSVs is aggravated. Therefore, the research on the failure mechanism of the TSV-Cu/Si composite interface has important significance on the development and application of the TSV technology.

Currently, the related methods for researching the TSV composite interface mainly include placing the TSV composite structure in a vacuum system, integrating the vacuum system in a temperature cycle system, or integrating the temperature cycle system in the vacuum system, and controlling the temperature of the temperature cycle system in a cyclic manner, so as to observe the condition of the TSV composite interface in the temperature change process. However, in the solution of integrating the vacuum system into the temperature circulating system, the temperature circulating system is external and has poor heat transfer effect, so that the temperature variation in the vacuum system may not meet the actual required value; in the scheme of integrating the temperature circulating system into the vacuum system, the vacuum system needs to be externally connected with various devices, needs additional hole opening design and sealing design, and has poor vacuum effect.

Therefore, how to design a more complete testing scheme for the TSV composite structure is one of the problems that those skilled in the art are urgently required to solve.

Disclosure of Invention

In view of the above, it is desirable to provide a testing system and a testing method for a composite through silicon via structure.

A system for testing a through silicon via composite structure, comprising:

a temperature change box, the internal temperature of which changes cyclically;

the vacuum box is arranged in the temperature change box and is used for placing a sample to be tested with a through silicon via composite structure;

the temperature monitoring device is connected with the vacuum box and the temperature change box and is used for monitoring the temperature change range of the sample to be detected and controlling the temperature change box to adjust the cyclic change state of the internal temperature so as to ensure that the temperature of the sample to be detected changes within the target temperature change range;

and the observation device is used for observing the interface state of the sample to be detected when the temperature of the sample to be detected circularly changes within the target temperature change range.

In one embodiment, the temperature change box comprises a box body, a heating device and a refrigerating device, wherein the heating device is used for heating the box body so as to raise the internal temperature of the box body, and the refrigerating device is used for cooling the box body so as to lower the internal temperature of the box body.

In one embodiment, the sample to be tested is attached to the inner wall of the vacuum box through a heat conducting element.

In one embodiment, the thermally conductive element comprises a thermally conductive glue.

In one embodiment, the vacuum box is connected with a vacuum pump machine through a vacuum valve, and the vacuum pump machine is used for vacuumizing a sealed cavity in the vacuum box.

In one embodiment, the temperature monitoring device comprises a temperature monitor and a temperature probe which are electrically connected, the temperature probe extends into the vacuum box and is used for sensing the temperature of the sample to be detected, the temperature monitor collects sensing data of the temperature probe and controls the temperature change box to adjust the internal temperature according to the sensing data, so that the temperature of the sample to be detected changes within a target temperature change range.

In one embodiment, the temperature monitoring instrument comprises a patrol instrument and an upper computer, wherein the patrol instrument is connected with the temperature probe and is used for acquiring the induction data, and the upper computer is connected with the patrol instrument and is used for analyzing and processing the induction data.

In one embodiment, the observation device comprises a focused ion beam and a electron microscope.

A method for testing a through silicon via composite structure comprises the following steps:

providing a temperature change box and a vacuum box for placing a sample to be detected with a through silicon via composite structure, and arranging the vacuum box in the temperature change box;

setting a test environment of the temperature change box, wherein the test environment comprises a cyclic change state of the internal temperature;

monitoring the temperature change range of the sample to be detected in the vacuum box, and controlling the temperature change box to adjust the cyclic change state of the internal temperature so as to enable the temperature of the sample to be detected to change within the target temperature change range;

and observing the interface state of the sample to be detected when the temperature of the sample to be detected circularly changes within the target temperature change range.

In one embodiment, before the step of providing a temperature variation box and a vacuum box for placing a sample to be tested of the through silicon via composite structure, and disposing the vacuum box inside the temperature variation box, the method for testing the through silicon via composite structure further includes:

and attaching the sample to be tested to the inner wall of the vacuum box through a heat conducting element.

The testing system of the silicon through hole composite structure comprises a temperature change box, a vacuum box, a temperature monitoring device and an observation device, a sample to be tested of the silicon through hole composite structure is placed in the vacuum box, the vacuum box is placed in the temperature change box, when the temperature in the temperature change box is in cyclic change, the temperature change range of the sample to be tested is monitored through the temperature monitoring device, if the temperature change range of the sample to be tested is judged to be inconsistent with the required target temperature change range, the temperature change box is reset, the internal temperature cyclic change state of the sample to be tested is adjusted, so that the temperature of the sample to be tested is changed in the target temperature change range, and the interface state of the sample to be tested is observed through the observation device. Therefore, the temperature change state of the temperature change box is corrected, so that the sample to be measured can be changed within the target temperature change range, the test accuracy is improved, and the influence on the observation accuracy caused by the fact that the temperature of the sample to be measured cannot reach the target temperature due to the heat transfer delay between the temperature change box and the vacuum box is avoided. Meanwhile, the vacuum box is less connected with external equipment, and the opening and sealing design of the vacuum box are not needed, so that the vacuum effect of the vacuum box can be ensured, and the sealing cost is reduced.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of a testing system for a tsv composite structure according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of another embodiment of a testing system for a through silicon via composite structure according to an embodiment of the present disclosure.

Description of reference numerals:

10. a sample to be tested; 20. a temperature change box; 30. a vacuum box; 31. a heat conducting element; 32. a vacuum valve; 33. a vacuum pump; 40. a temperature monitoring device; 41. a temperature monitor; 42. a temperature probe.

Detailed Description

To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

The TSV is a short for Through Silicon Via (Through Silicon Via), and mainly realizes vertical interconnection between chips or wafers by manufacturing a vertical electrical connection channel penetrating Through the chips or wafers, and plays roles in signal conduction, heat transfer and mechanical support. Because of its advantages of good electrical performance, low power consumption, high interconnection density, small size, light weight, etc., it is widely used in various fields, including: (1) 3D integration of the chip; (2) 3D integration of heterogeneous devices, such as integration of silicon chips with MEMS, RF, and optoelectronic devices; (3) wafer level 3D integration; (4) silicon Interposer (Interposer)2.5D integration.

The TSV is a composite structure with a multi-layer material interface filled with electroplated Cu, and the interface structure is Cu/Ta/SiO₂and/Si, and exhibits a certain roughness. In the TSV-Cu/Si interface structure, due to the fact that the Coefficient of Thermal Expansion (CTE) of materials is obviously different, under the condition of temperature circulation, serious thermal mismatch can cause large shear stress and tensile stress to be generated in different material layers in the TSV-Cu/Si interface, and due to the fact that the strength of the interface at the bonding position of the different material layers is weak due to the fact that an electroplating process is adopted, the interface is easily induced to be layered or cracked, electricity leakage occurs among TSVs, and the electro-migration problem of the TSVs is aggravated. Therefore, the research on the failure mechanism of the TSV-Cu/Si composite interface has important significance on the development and application of the TSV technology.

Under the temperature cycle of the TSV, residual stress generated by a TSV-Cu/Si interface is one of the most main reasons for interface failure, and the interface failure is the main source of reduction of the yield of TSV finished products and outstanding reliability problems. At present, the integrity of the TSV-Cu/Si interface is still a research hotspot and difficulty. One of the difficulties is the in-situ observation of the TSV-Cu/Si interface under temperature cycling. In the temperature cycle process, Cu at the interface is exposed to high-temperature air, and the Cu and oxygen undergo redox reaction, so that the material property at the interface is changed, and the experimental result is seriously influenced. Therefore, how to avoid the oxidation reaction of Cu at the TSV-Cu/Si interface in the temperature cycle process is the key for realizing the in-situ test of the integrity of the TSV interface.

At present, the method for in-situ testing the integrity of the TSV interface mainly utilizes vacuum to prevent the Cu of the TSV interface from being oxidized, i.e., a new vacuum temperature circulation system is formed by combining a vacuum sealing technology and a temperature circulation system. The method is divided into the following steps of placing the TSV composite structure in a vacuum system, integrating the vacuum system in a temperature circulating system, or integrating the temperature circulating system in the vacuum system, and controlling the temperature of the temperature circulating system in a circulating mode so as to observe the condition of the TSV composite interface in the temperature changing process. However, in the scheme of integrating the vacuum system into the temperature circulating system, the temperature circulating system is external and has poor heat transfer effect, so that the temperature change in the vacuum system may not conform to the actually required value, the accuracy of the test is affected, and the test research on the TSV composite interface is not facilitated; in the scheme of integrating the temperature circulation system into the vacuum system, the vacuum system needs to be externally connected with various devices, an additional opening design and a sealing design are needed, the vacuum effect is poor, and Cu may generate an oxidation-reduction reaction with oxygen to influence the test result.

In summary, how to obtain a testing strategy that has a high vacuum degree and can accurately control the temperature variation of the TSV composite structure is one of the problems to be solved in the art.

In order to solve the above problems, the present embodiment provides a testing system and a testing method for a through silicon via composite structure.

Example one

The embodiment provides a testing system of a through silicon via composite structure, which is used for testing the through silicon via composite structure.

Referring to fig. 1, the testing system of the through silicon via composite structure provided in this embodiment includes a temperature variation box 20, a vacuum box 30, a temperature monitoring device 40, and an observation device.

The temperature change box 20 provides a test environment with temperature cycle change, the internal temperature of the temperature change box 20 changes cyclically, and may be called a high-low temperature cycle box, and the internal temperature of the temperature change box can gradually increase from low to high and then gradually decrease from high to low, and thus changes cyclically. In practical applications, the temperature variation range in the temperature variation box 20 can be set according to actual requirements, and the temperature can be varied within the set temperature variation range by configuring corresponding devices in the temperature variation box 20.

The vacuum box 30 is arranged in the temperature change box 20, and the sample 10 to be tested with the through silicon via composite structure is placed in the vacuum box 30. Since only the sample 10 to be tested with the through-silicon-via composite structure needs to be arranged inside the vacuum box 30, a small vacuum box 30 can be arranged to meet the requirement.

The temperature monitoring device 40 is connected to the vacuum box 30 and the temperature change box 20, and is configured to monitor a temperature change range of the sample 10 to be measured, and control the temperature change box 20 to adjust a cyclic change state of the internal temperature, so that the temperature of the sample 10 to be measured changes within a target temperature change range.

The original purpose of providing the temperature variation box 20 is to make the sample 10 to be tested realize the required temperature variation by means of heat transfer, but since the sample 10 to be tested is not directly arranged in the temperature variation box 20, but arranged in the vacuum box 30 in the temperature variation box 20, a problem of heat transfer delay occurs, so that although the set temperature is reached in the temperature variation box 20, the sample 10 to be tested does not reach the required temperature, which obviously affects the test result. Therefore, the temperature monitoring device 40 is provided in the embodiment, the temperature change range of the sample 10 to be measured is monitored by the temperature monitoring device 40, and if it is determined that the temperature change range of the sample 10 to be measured is not the actually required target temperature change range, it indicates that the temperature in the temperature change box 20 needs to be adjusted, so that the temperature of the sample 10 to be measured changes within the target temperature change range. For example, the temperature variation range of the sample 10 to be tested is 10-80 degrees, the temperature variation range set in the temperature variation box 20 is 10-80 degrees, but due to the problem of heat transfer delay, when the temperature in the temperature variation box 20 is cyclically varied between 10-80 degrees, it is monitored that the temperature of the sample 10 to be tested is actually varied between 15-75 degrees, in order to ensure that the temperature of the sample 10 to be tested is varied between 10-80 degrees, the temperature variation range set in the temperature variation box 20 can be adjusted to be 15-85 degrees, meanwhile, the temperature variation range of the sample 10 to be tested is kept in real time by the temperature monitoring device 40, if the temperature of the sample 10 to be tested is varied between 10-80 degrees, the test is performed under the current configuration, and if the target temperature variation range of the sample 10 to be tested is not met, the temperature variation range of the temperature variation box 20 is further adjusted, until the temperature variation range of the sample 10 to be measured is the target temperature variation range.

In this embodiment, in practical applications, the temperature monitored by the temperature monitoring device 40 may be the temperature on the surface of the sample 10 to be measured or within a preset distance range from the surface of the sample 10 to be measured, and the error between the temperature at these positions and the actual temperature of the sample 10 to be measured is small, and the temperature can be directly determined as the temperature of the sample 10 to be measured.

The observation device is used for observing the interface state of the sample 10 to be measured when the temperature of the sample 10 to be measured circularly changes within the target temperature change range. Through the cooperation of the temperature monitoring device 40 and the temperature change box 20, when the temperature of the sample 10 to be measured changes circularly within the target temperature change range, the interface state of the sample 10 to be measured can be observed through the observation device.

According to the testing system of the through silicon via composite structure, the sample 10 to be tested of the through silicon via composite structure is placed in the vacuum box 30, the vacuum box 30 is placed in the temperature change box 20, when the internal temperature of the temperature change box 20 is in cyclic change, the temperature change range of the sample 10 to be tested is monitored through the temperature monitoring device 40, if the temperature change range of the sample 10 to be tested is judged to be inconsistent with the required target temperature change range, the temperature change box 20 is reset, the internal temperature cyclic change state is adjusted, so that the temperature of the sample 10 to be tested is changed in the target temperature change range, and then the interface state of the sample 10 to be tested is observed through the observation device. Therefore, the temperature change state of the temperature change box 20 is corrected, so that the sample 10 to be measured can be ensured to change within the target temperature change range, the test accuracy is improved, and the influence on the observation accuracy caused by the fact that the temperature of the sample 10 to be measured cannot reach the target temperature due to heat transfer delay is avoided. Meanwhile, the vacuum box 30 is less connected with external equipment, and the opening and sealing design of the vacuum box 30 is not needed, so that the vacuum effect of the vacuum box 30 can be ensured, and the sealing cost is reduced.

In one embodiment, the temperature change box 20 includes a box body, a heating device for heating the box body to raise the internal temperature of the box body, and a cooling device for cooling the box body to lower the internal temperature of the box body.

When the temperature variation scope of temperature variation case 20 has been set for, can heat the box through firing equipment, promote the temperature maximum value of setting for with the inside temperature of box, then the rethread refrigeration plant reduces the inside temperature of box to the temperature minimum value of setting for, so the circulation is reciprocal, realizes temperature variation case 20's temperature cycle change.

The heating equipment can comprise heating pipes and other conventional heating equipment, and the refrigerating equipment can comprise refrigerating pipes and other conventional refrigerating equipment, so that the cost is low.

In addition, the temperature change box 20 may further include an air blower therein, so that temperature change can be accelerated, temperature change efficiency can be improved, and test efficiency can be improved.

In one embodiment, referring to fig. 2, the sample 10 to be tested is attached to the inner wall of the vacuum box 30 by a heat conducting element 31. The heat conducting element 31 is used as a fixing platform for the sample 10 to be measured, so that the heat conduction between the inner wall of the vacuum box 30 and the sample 10 to be measured is not influenced, and the heat transfer effect is ensured.

In one embodiment, the heat conducting element 31 comprises a heat conducting glue. When the heat conducting glue is used as the heat conducting element 31, the sample 10 to be measured with a small size can be adhered to the heat conducting glue, and then the sample is fixed to the vacuum box 30.

The heat-conducting adhesive can be high-temperature and low-temperature resistant heat-conducting adhesive, such as any one of epoxy resin high-temperature adhesive, heat-conducting silicone grease and methyl vinyl polysiloxane mixture.

In one embodiment, referring to fig. 2, the vacuum box 30 is connected to a vacuum pump 33 through a vacuum valve 32, and the vacuum pump 33 is used for vacuuming the sealed cavity in the vacuum box 30. Before the test is started, the gas in the sealed cavity of the vacuum box 30 is pumped out by the vacuum pump 33, so as to ensure that a vacuum environment can be provided, and the phenomenon that the oxidation-reduction reaction of Cu in the sample 10 to be tested is generated to influence the test accuracy is prevented.

The vacuum box 30 may include a box body and a cover plate with an opening at one side, and a sealing rubber ring is disposed between the cover plate and the opening of the box body to improve the sealing property. The cover plate and the box body can be connected through a nut buckle, so that the box body and the cover plate are fixed, and a sealed cavity is formed. One end of the vacuum valve 32 is connected with the nut hole on the cover plate, and the other end is connected with the vacuum pump 33. When the vacuum pump 33 is not required to be connected, the vacuum valve 32 may serve as a reserved connection for connecting the vacuum tank 30 to other external devices.

In one embodiment, referring to fig. 2, the temperature monitoring device 40 includes a temperature monitor 41 and a temperature probe 42 electrically connected to each other, the temperature probe 42 extends into the vacuum chamber 30 for sensing the temperature of the sample 10 to be measured, and the temperature monitor 41 collects sensing data of the temperature probe 42 and controls the temperature change chamber 20 to adjust the internal temperature according to the sensing data, so that the temperature of the sample 10 to be measured changes within a target temperature change range.

The temperature probe 42 may be a patch type temperature probe 42, the patch type temperature probe 42 penetrates through the cover plate and extends into the sealed cavity of the vacuum box 30 to be attached to the periphery of the sample 10 to be measured, and the temperature around the sample 10 to be measured is sensed by the thermocouple to serve as the temperature of the sample 10 to be measured. The temperature monitor 41 is disposed outside the temperature change box 20 and is used for acquiring sensing data of the temperature probe 42, and recording and processing the sensing data in real time. When the temperature monitor 41 determines that the temperature of the sample 10 does not meet the requirement, it notifies the temperature change box 20 to adjust the temperature change range of the temperature change box 20.

In one embodiment, the temperature monitor 41 comprises a data logger connected to the temperature probe 42 for collecting the sensing data and a host computer connected to the data logger for analyzing and processing the sensing data. The data acquisition instrument is a data acquisition instrument, and can continuously acquire data on the temperature probe 42 after being connected with the temperature probe 42, so that functions of data acquisition, alarm control, transmission output, data communication and the like are realized; the upper computer is data processing software on the computer, and can receive temperature data sent by the patrol instrument in real time after being connected with the patrol instrument, so that the functions of numerical value display, data processing, service life monitoring, alarm control and the like are realized.

In one embodiment, the observation device comprises a focused ion beam and a electron microscope. Namely, the TSV composite interface under different temperature cycle times is observed in situ through a Focused Ion Beam (FIB) and an electron microscope, so that the research on the TSV composite interface is realized, and the accuracy of the result of in-situ observation is high because the temperature of the sample 10 to be measured is cyclically changed within an accurate temperature change range and does not change substances under a vacuum environment.

Example two

The embodiment provides a testing method of a through silicon via composite structure, which is used for testing the through silicon via composite structure. The testing method of the through silicon via composite structure provided in this embodiment may utilize the testing system of the through silicon via composite structure provided in the first embodiment, and may also utilize other types of testing systems.

The testing method of the through silicon via composite structure provided by the embodiment comprises the following steps:

step S200, providing a temperature change box 20 and a vacuum box 30 for placing a sample 10 to be tested with a through silicon via composite structure, and arranging the vacuum box 30 in the temperature change box 20;

step S400, setting a test environment of the temperature change box 20, wherein the test environment comprises a cyclic change state of the internal temperature;

step S600, monitoring the temperature change range of the sample 10 to be detected in the vacuum box 30, and controlling the temperature change box 20 to adjust the cyclic change state of the internal temperature so as to change the temperature of the sample 10 to be detected in the target temperature change range;

step S800, observing the interface state of the sample 10 to be measured when the temperature of the sample 10 to be measured circularly changes within the target temperature change range.

The testing method of the through silicon via composite structure comprises the steps of placing a sample 10 to be tested of the through silicon via composite structure in a vacuum box 30, placing the vacuum box 30 in a temperature change box 20, monitoring the temperature change range of the sample 10 to be tested when the temperature inside the temperature change box 20 is in cyclic change, resetting the temperature change box 20 if the temperature change range of the sample 10 to be tested is judged to be inconsistent with the required target temperature change range, adjusting the cyclic change state of the internal temperature of the temperature change box to enable the temperature of the sample 10 to be tested to change within the target temperature change range, and observing the interface state of the sample 10 to be tested. Therefore, the temperature change state of the temperature change box 20 is corrected, so that the sample 10 to be measured can be ensured to change within the target temperature change range, the test accuracy is improved, and the influence on the observation accuracy caused by the fact that the temperature of the sample 10 to be measured cannot reach the target temperature due to heat transfer delay is avoided. Meanwhile, the vacuum box 30 is less connected with external equipment, and the opening and sealing design of the vacuum box 30 is not needed, so that the vacuum effect of the vacuum box 30 can be ensured, and the sealing cost is reduced.

In one embodiment, before the step S200 of providing the temperature variation box 20 and the vacuum box 30 on which the sample 10 to be tested of the through silicon via composite structure is placed, and disposing the vacuum box 30 inside the temperature variation box 20, the testing method of the through silicon via composite structure provided by the present embodiment further includes the following steps:

step S100, attaching the sample 10 to be tested to the inner wall of the vacuum box 30 through the heat conducting element 31.

The test method for the composite through silicon via structure provided in this embodiment and the test system for the composite through silicon via structure provided in this embodiment belong to the same inventive concept, and specific contents of the test method for the composite through silicon via structure may be referred to the specific description in the first embodiment, and are not described herein again.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.