阅读说明：本技术 一种hjt电池的加工方法以及一种hjt电池 (HJT battery and processing method thereof ) 是由 田得雨 陈刚 于 2021-08-18 设计创作，主要内容包括：本发明属于太阳能电池技术领域,尤其涉及一种HJT电池的加工方法以及一种HJT电池,加工方法包括以下步骤：在硅衬底的正面、背面分别沉积非晶硅本征层；在正面的非晶硅本征层上沉积第一传输层,在背面的非晶硅本征层上沉积第二传输层；分别在第一传输层和第二传输层上沉积多层TCO膜层,其中,位于最外侧的TCO膜层掺杂有金属氧化物,且金属氧化物的质量比重在0.5％至5.5％范围内；分别在最外侧的TCO膜层上制备金属电极。制备而成的HJT太阳能电池可以获得较佳的结合力,在制备或者使用过程中能有效避免发生栅线脱落的情况,且能获得较高的栅线拉力,同时能获得较大的退火窗口,有利于加工制造,另外无需使用单独的镀铜工艺腔,大大降低了生产成本。(The invention belongs to the technical field of solar cells, and particularly relates to a processing method of an HJT cell and the HJT cell, wherein the processing method comprises the following steps: depositing amorphous silicon intrinsic layers on the front surface and the back surface of the silicon substrate respectively; depositing a first transmission layer on the amorphous silicon intrinsic layer on the front surface, and depositing a second transmission layer on the amorphous silicon intrinsic layer on the back surface; depositing multiple TCO film layers on the first transmission layer and the second transmission layer respectively, wherein the TCO film layer positioned on the outermost side is doped with metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5-5.5%; and respectively preparing metal electrodes on the outermost TCO film layers. The prepared HJT solar cell can obtain better binding force, can effectively avoid the situation of grid line falling off in the preparation or use process, can obtain higher grid line tension, can obtain a larger annealing window at the same time, is beneficial to processing and manufacturing, does not need to use a separate copper plating process cavity, and greatly reduces the production cost.)

1. A method for processing an HJT battery is characterized by comprising the following steps:

depositing amorphous silicon intrinsic layers on the front surface and the back surface of the silicon substrate respectively;

depositing a first transmission layer on the amorphous silicon intrinsic layer on the front surface, and depositing a second transmission layer on the amorphous silicon intrinsic layer on the back surface;

depositing multiple TCO film layers on the first transmission layer and the second transmission layer respectively, wherein the TCO film layer positioned on the outermost side is doped with metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5-5.5%;

and respectively preparing metal electrodes on the outermost TCO film layers.

2. The HJT cell processing method of claim 1, wherein the depositing multiple TCO films on the first and second transport layers, respectively, comprises:

and sequentially depositing a first TCO film layer, a second TCO film layer and a third TCO film layer on the first transmission layer and the second transmission layer respectively.

3. The HJT cell process of claim 2, wherein the first TCO film has a thickness in the range of 10nm to 40nm, the second TCO film has a thickness in the range of 10nm to 40nm, and the third TCO film has a thickness in the range of 5nm to 25 nm.

4. The method of claim 1, wherein the metal oxide comprises Ag, Ni, Sn, and the ratio of Ag, Ni, Sn is 60%, 20%.

5. The HJT cell processing method of claim 1, wherein the step of fabricating metal electrodes on the outermost TCO films respectively comprises:

respectively plating metal seed layers on the TCO film layers on the outermost sides;

respectively depositing metal grid lines on the metal seed layer;

and respectively depositing metal protective layers on the metal gate lines.

6. An HJT cell, comprising:

a silicon substrate;

the amorphous silicon intrinsic layers are respectively arranged on the front surface and the back surface of the silicon substrate;

the first transmission layer is arranged on the amorphous silicon intrinsic layer on the front surface, and the second transmission layer is arranged on the amorphous silicon intrinsic layer on the back surface;

the multilayer TCO film layers are respectively arranged on the first transmission layer and the second transmission layer, wherein the TCO film layer positioned on the outermost side is doped with metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5-5.5%;

and the metal electrodes are respectively arranged on the TCO film layers on the outermost sides.

7. The HJT cell of claim 6, wherein the TCO film comprises three layers, a first TCO film, a second TCO film, and a third TCO film in sequence from inside to outside.

8. The HJT cell of claim 7, wherein the first TCO film layer has a thickness in the range of 10nm to 40nm, the second TCO film layer has a thickness in the range of 10nm to 40nm, and the third TCO film layer has a thickness in the range of 5nm to 25 nm.

9. The HJT cell of claim 6, wherein the metal oxide comprises Ag, Ni, Sn, and the ratio of Ag, Ni, Sn is 60%, 20%.

10. The HJT cell of claim 6, wherein the metal electrode is a copper electrode.

Technical Field

The invention belongs to the technical field of solar cells, and particularly relates to a method for processing an HJT cell and the HJT cell.

Background

The HJT solar cell has the characteristics of high efficiency, simple process, PID resistance, low temperature coefficient, high generating capacity, low light attenuation and the like, and can improve the reliability and stability of a photovoltaic module. In addition, the HJT solar cell has a symmetrical structure, both sides can generate electricity, the double-sided rate reaches more than 90%, and the HJT cell can output at least 30-40% more electricity compared with a single-sided solar cell, so that the HJT cell is considered as a mainstream product of a next-generation solar cell.

In the manufacturing process of the conventional HJT solar cell, a TCO film layer is plated on a cell substrate, a metal seed layer is directly deposited on the TCO film layer and is electroplated into a metal grid line, but the solar cell manufactured by the manufacturing method has poor bonding force, is easy to drop the grid line in the preparation or use process, has low tensile force of only about 0.8N, has a low annealing window in the subsequent copper plating and fixing processes, is difficult to process and manufacture, and needs an independently-added copper plating process chamber, so that the equipment cost in the PVD (physical vapor deposition) film plating stage is greatly increased.

Disclosure of Invention

The invention provides a processing method of an HJT battery, and aims to solve the technical problems that the HJT solar battery prepared by the existing processing method has poor binding force, is easy to drop a grid line in the preparation or use process, has low tension which is only about 0.8N, has a lower annealing window in the subsequent copper plating and fixing processes, is difficult to process and manufacture, and needs an independently-added copper plating process cavity to greatly increase the equipment cost in the PVD (physical vapor deposition) film coating stage.

The invention is realized in such a way, and provides a method for processing an HJT battery, which comprises the following steps:

depositing amorphous silicon intrinsic layers on the front surface and the back surface of the silicon substrate respectively;

depositing a first transmission layer on the amorphous silicon intrinsic layer on the front surface, and depositing a second transmission layer on the amorphous silicon intrinsic layer on the back surface;

depositing multiple TCO film layers on the first transmission layer and the second transmission layer respectively, wherein the TCO film layer positioned on the outermost side is doped with metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5-5.5%;

and respectively preparing metal electrodes on the outermost TCO film layers.

Further, the step of depositing a plurality of TCO film layers on the first transfer layer and the second transfer layer respectively specifically includes:

and sequentially depositing a first TCO film layer, a second TCO film layer and a third TCO film layer on the first transmission layer and the second transmission layer respectively.

Still further, the first TCO film layer has a thickness in a range of 10nm to 40nm, the second TCO film layer has a thickness in a range of 10nm to 40nm, and the third TCO film layer has a thickness in a range of 5nm to 25 nm.

Furthermore, the metal oxide contains silver, nickel and tin, and the proportion of the silver, the nickel and the tin is 60%, 20% and 20%.

Further, the step of preparing the metal electrodes on the outermost TCO films respectively specifically includes:

respectively plating metal seed layers on the TCO film layers on the outermost sides;

respectively depositing metal grid lines on the metal seed layer;

and respectively depositing metal protective layers on the metal gate lines.

The present invention also provides an HJT battery comprising:

a silicon substrate;

the amorphous silicon intrinsic layers are respectively arranged on the front surface and the back surface of the silicon substrate;

the first transmission layer is arranged on the amorphous silicon intrinsic layer on the front surface, and the second transmission layer is arranged on the amorphous silicon intrinsic layer on the back surface;

the multilayer TCO film layers are respectively arranged on the first transmission layer and the second transmission layer, wherein the TCO film layer positioned on the outermost side is doped with metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5-5.5%;

and the metal electrodes are respectively arranged on the TCO film layers on the outermost sides.

Furthermore, the TCO film layer is provided with three layers, namely a first TCO film layer, a second TCO film layer and a third TCO film layer from inside to outside in sequence.

Further, the thickness of the first TCO film layer is within a range of 10nm to 40nm, the thickness of the second TCO film layer is within a range of 10nm to 40nm, and the thickness of the third TCO film layer is within a range of 5nm to 25 nm.

Furthermore, the metal oxide contains silver, nickel and tin, and the proportion of the silver, the nickel and the tin is 60%, 20% and 20%.

Further, the metal electrode is a copper electrode.

The invention has the advantages that the metal electrode is prepared on the outermost TCO film layer heavily doped with the metal oxide, the mass proportion of the metal oxide is in the range of 0.5-5.5%, the prepared HJT solar cell can obtain better binding force, the situation of grid line falling can be effectively avoided in the preparation or use process, higher grid line tension can be obtained, a larger annealing window can be obtained, the processing and the manufacturing are facilitated, in addition, a separate copper plating process cavity is not needed, and the production cost is greatly reduced.

Drawings

Fig. 1 is a block flow diagram of a method for processing an HJT cell according to an embodiment of the present invention;

fig. 2 is another block flow diagram of a method for processing an HJT cell according to an embodiment of the present invention;

fig. 3 is a further flowchart of a method for processing an HJT cell according to an embodiment of the present invention;

fig. 4 is a schematic diagram of an HJT cell according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

The invention provides a method for processing an HJT battery, which is characterized in that a metal electrode 50 is prepared on an outermost TCO film layer heavily doped with metal oxide, the mass proportion of the metal oxide is in a range of 0.5-5.5%, the prepared HJT battery can obtain better binding force, the situation of grid line falling can be effectively avoided in the preparation or use process, higher grid line tension can be obtained, a larger annealing window can be obtained, the processing and manufacturing are facilitated, a separate copper plating process cavity is not needed, and the production cost is greatly reduced.

Example one

Referring to fig. 1, a method for manufacturing an HJT battery according to an embodiment of the present invention includes the following steps:

step 10, depositing amorphous silicon intrinsic layers on the front surface and the back surface of the silicon substrate respectively;

step 20, depositing a first transmission layer on the amorphous silicon intrinsic layer on the front surface, and depositing a second transmission layer on the amorphous silicon intrinsic layer on the back surface;

step 30, depositing multiple TCO film layers on the first transmission layer and the second transmission layer respectively, wherein the TCO film layer positioned at the outermost side is doped with metal oxide, and the mass proportion of the metal oxide is in the range of 0.5-5.5%;

and step 40, preparing metal electrodes on the TCO film layers on the outermost sides respectively.

The TCO film layer (transparent conductive oxide) mainly comprises oxides of In, Sb, Zn and Cd and a composite multi-element oxide film material thereof, and has common photoelectric characteristics of forbidden bandwidth, high light transmittance In a visible light spectrum region, low resistivity and the like.

In this embodiment, a silicon substrate 10 is selected, the silicon substrate 10 may be an n-type monocrystalline silicon wafer, double-sided texturing is performed on the silicon substrate 10, then amorphous silicon intrinsic layers 20 are deposited on the front surface and the back surface of the silicon substrate 10, respectively, a first transmission layer 31 is deposited on the amorphous silicon intrinsic layer 20 on the front surface, and a second transmission layer 32 is deposited on the amorphous silicon intrinsic layer 20 on the back surface. After the first transfer layer 31 and the second transfer layer 32 are prepared, a multilayer TCO film is deposited on the first transfer layer 31, and a multilayer TCO film is deposited on the second transfer layer 32, followed by preparing the metal electrode 50 on the front and back outermost TCO films.

It should be noted that the first transmission layer 31 may be an n-type amorphous silicon layer or a p-type amorphous silicon layer, and the second transmission layer 32 may be a p-type amorphous silicon layer or an n-type amorphous silicon layer. Specifically, when an n-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the front surface, a p-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the rear surface; when a p-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the front surface, an n-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the rear surface.

The TCO film layer located on the outermost side is doped with metal oxide, the mass proportion of the metal oxide is in the range of 0.5% -5.5%, the prepared HJT battery can obtain better binding force, the situation that grid lines fall off can be effectively avoided in the preparation or use process, higher grid line tension can be obtained, a larger annealing window can be obtained, processing and manufacturing are facilitated, higher battery Filling Factor (FF) and higher battery efficiency (Eff) can be brought, in addition, a separate copper plating process cavity is not needed, and the production cost is greatly reduced.

Specifically, referring to fig. 2, the step of depositing the multiple TCO film layers on the first transmission layer and the second transmission layer respectively specifically includes:

and 31, sequentially depositing a first TCO film layer, a second TCO film layer and a third TCO film layer on the first transmission layer and the second transmission layer respectively.

After the first transmission layer 31 and the second transmission layer 32 are respectively deposited on the front surface and the back surface of the cell, a first TCO film layer 41, a second TCO film layer 42 and a third TCO film layer 43 are sequentially deposited on the first transmission layer 31 and the second transmission layer 32, respectively. In the three TCO film layers, the first TCO film 41 is located at the innermost side, the third TCO film 43 is located at the outermost side, and the second TCO film 42 is located between the first TCO film 41 and the third TCO film 43.

Wherein the third TCO film 43 is doped with a metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5% to 5.5%. After the metal electrode 50 is prepared on the third TCO film 43 doped with heavy metal, the prepared HJT cell can obtain better binding force, can effectively avoid the situation that grid lines fall off in the preparation or use process, can obtain higher tension of the grid lines, can obtain a larger annealing window, is beneficial to processing and manufacturing, can bring higher cell Filling Factor (FF) and higher cell efficiency (Eff), and does not need to use a separate copper plating process chamber, thereby greatly reducing the production cost.

In the present embodiment, the thickness of the first TCO film layer 41 is in the range of 10nm to 40nm, the thickness of the second TCO film layer 42 is in the range of 10nm to 40nm, and the thickness of the third TCO film layer 43 is in the range of 5nm to 25 nm. Preferably, the thickness of the first TCO film layer 41 is 35nm, the thickness of the second TCO film layer 42 is 30nm, and the thickness of the third TCO film layer 43 is 15 nm.

In this embodiment, the metal oxide includes silver, nickel, and tin, and the ratio of silver, nickel, and tin is 60% silver, 20% nickel, and 20% tin.

Specifically, referring to fig. 3, the step of preparing the metal electrodes on the outermost TCO film layers respectively specifically includes:

step 41, plating metal seed layers on the TCO film layers on the outermost sides respectively;

step 42, respectively depositing metal grid lines on the metal seed layer;

and 43, respectively depositing a metal protective layer on the metal gate lines.

In this embodiment, after preparing the front and back outermost TCO films (which can be understood as the third TCO film 43) respectively, a metal seed layer is plated on the outermost TCO films, a metal gate line is deposited on the plated metal seed layer, and a metal protective layer is deposited on the metal gate line. After the metal electrode 50 is prepared on the TCO film layer on the outermost side doped with heavy metal, the prepared HJT battery can obtain better binding force, the condition that grid lines fall off can be effectively avoided in the preparation or use process, higher grid line tension can be obtained, a larger annealing window can be obtained, the processing and the manufacturing are facilitated, higher battery Filling Factor (FF) and higher battery efficiency (Eff) can be brought, in addition, an independent copper plating process cavity is not required to be used, and the production cost is greatly reduced.

The metal seed layer can be selected as a copper seed layer, and the deposited metal grid line is the copper grid line. Of course, in other embodiments, the metal seed layer may be selected as another, for example, a silver seed layer, and the deposited metal grid line is a silver grid line.

Wherein, the metal protective layer can be selected as a nickel protective layer. Of course, in other embodiments, the metal protection layer may be selected to be other, such as a silver protection layer.

Example two

Referring to fig. 4, the second embodiment provides an HJT battery, including:

a silicon substrate 10;

amorphous silicon intrinsic layers 20 respectively disposed on the front and back surfaces of the silicon substrate 10;

a first transfer layer 31 disposed on the amorphous silicon intrinsic layer 20 of the front surface, a second transfer layer 32 disposed on the amorphous silicon intrinsic layer 20 of the rear surface;

a plurality of TCO film layers respectively disposed on the first transfer layer 31 and the second transfer layer 32, wherein the TCO film layer located at the outermost side is doped with a metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5% to 5.5%;

and metal electrodes 50 respectively disposed on the outermost TCO film layers.

The TCO film layer (transparent conductive oxide) mainly comprises oxides of In, Sb, Zn and Cd and a composite multi-element oxide film material thereof, and has common photoelectric characteristics of forbidden bandwidth, high light transmittance In a visible light spectrum region, low resistivity and the like.

In this embodiment, a silicon substrate 10 is selected, the silicon substrate 10 may be an n-type monocrystalline silicon wafer, double-sided texturing is performed on the silicon substrate 10, then amorphous silicon intrinsic layers 20 are deposited on the front surface and the back surface of the silicon substrate 10, respectively, a first transmission layer 31 is deposited on the amorphous silicon intrinsic layer 20 on the front surface, and a second transmission layer 32 is deposited on the amorphous silicon intrinsic layer 20 on the back surface. After the first transfer layer 31 and the second transfer layer 32 are fabricated, a multilayer TCO film is deposited on the first transfer layer 31, and a multilayer TCO film is deposited on the second transfer layer 32, followed by fabricating the metal electrode 50 on the front and back outermost TCO films, thereby fabricating the HJT cell as described above.

It should be noted that the first transmission layer 31 may be an n-type amorphous silicon layer or a p-type amorphous silicon layer, and the second transmission layer 32 may be a p-type amorphous silicon layer or an n-type amorphous silicon layer. Specifically, when an n-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the front surface, a p-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the rear surface; when a p-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the front surface, an n-type amorphous silicon layer is deposited on the amorphous silicon intrinsic layer 20 of the rear surface.

The TCO film layer located on the outermost side is doped with metal oxide, the mass proportion of the metal oxide is in the range of 0.5% -5.5%, the prepared HJT battery can obtain better binding force, the situation that grid lines fall off can be effectively avoided in the preparation or use process, higher grid line tension can be obtained, a larger annealing window can be obtained, processing and manufacturing are facilitated, higher battery Filling Factor (FF) and higher battery efficiency (Eff) can be brought, in addition, a separate copper plating process cavity is not needed, and the production cost is greatly reduced.

In this embodiment, the TCO film includes three layers, which are, from inside to outside, a first TCO film 41, a second TCO film 42, and a third TCO film 43. In the preparation process, the first transmission layer 31 and the second transmission layer 32 are respectively deposited on the front surface and the back surface of the cell, and then the first TCO film 41, the second TCO film 42 and the third TCO film 43 are sequentially deposited on the first transmission layer 31 and the second transmission layer 32. In the three TCO film layers, the first TCO film 41 is located at the innermost side, the third TCO film 43 is located at the outermost side, and the second TCO film 42 is located between the first TCO film 41 and the third TCO film 43.

Wherein the third TCO film 43 is doped with a metal oxide, and the mass specific gravity of the metal oxide is in the range of 0.5% to 5.5%. After the metal electrode 50 is prepared on the third TCO film 43 doped with heavy metal, the prepared HJT cell can obtain better binding force, can effectively avoid the situation that grid lines fall off in the preparation or use process, can obtain higher tension of the grid lines, can obtain a larger annealing window, is beneficial to processing and manufacturing, can bring higher cell Filling Factor (FF) and higher cell efficiency (Eff), and does not need to use a separate copper plating process chamber, thereby greatly reducing the production cost.

In the present embodiment, the thickness of the first TCO film layer 41 is in the range of 10nm to 40nm, the thickness of the second TCO film layer 42 is in the range of 10nm to 40nm, and the thickness of the third TCO film layer 43 is in the range of 5nm to 25 nm. Preferably, the thickness of the first TCO film layer 41 is 35nm, the thickness of the second TCO film layer 42 is 30nm, and the thickness of the third TCO film layer 43 is 15 nm.

In this embodiment, the metal oxide includes silver, nickel, and tin, and the ratio of silver, nickel, and tin is 60% silver, 20% nickel, and 20% tin.

Wherein the metal electrode 50 is a copper electrode. Of course, in other embodiments, the metal electrode 50 may be selected to be other, such as a silver electrode.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.