阅读说明：本技术 一种应用于无缆地震仪的片上带通滤波器 (On-chip band-pass filter applied to cable-free seismograph ) 是由 张海荣 欧阳敏 孙锋 盖永浩 于生宝 杨文博 景鹏飞 董仕琦 于 2021-08-18 设计创作，主要内容包括：本发明公开了一种应用于无缆地震仪的片上带通滤波器。包括：第一金属曲折线、第二金属曲折线、接地屏蔽层、第一MIM电容器与第二MIM电容器、输入馈线和输出馈线；输入端与输入馈线相连,输入馈线连接至第一金属曲折线,输出端与输出馈线相连,输出馈线与第一金属曲折线相连。第二金属曲折线结构弯曲在第一金属曲折线内部,第一金属曲折线和第金属二曲折线成Y轴对称,第一金属曲折线在Y轴方向连接至外围的接地屏蔽。该滤波器的优点在于可以有限的减小片上带通滤波器的面积,同时实现较强的耦合。而位于馈线下方的两个MIM电容合理利用多层结构,进一步的缩减芯片的面积。该片上带通滤波器可以应用于无缆地震仪中的无线射频模块,较好的滤去无用杂乱干扰信号。(The invention discloses an on-chip band-pass filter applied to a cableless seismograph. The method comprises the following steps: the device comprises a first metal zigzag line, a second metal zigzag line, a grounding shielding layer, a first MIM capacitor, a second MIM capacitor, an input feeder line and an output feeder line; the input end is connected with the input feeder line, the input feeder line is connected to the first metal zigzag line, the output end is connected with the output feeder line, and the output feeder line is connected with the first metal zigzag line. The second metal zigzag line structure is bent inside the first metal zigzag line, the first metal zigzag line and the second metal zigzag line form Y-axis symmetry, and the first metal zigzag line is connected to the peripheral ground shield in the Y-axis direction. The filter has the advantages that the area of the on-chip band-pass filter can be reduced in a limited way, and meanwhile, stronger coupling is realized. And the two MIM capacitors positioned below the feeder line reasonably utilize the multilayer structure, and further reduce the area of a chip. The on-chip band-pass filter can be applied to a wireless radio frequency module in a cable-free seismograph, and can better filter out useless clutter interference signals.)

1. The utility model provides a be applied to band-pass filter on chip of no cable seismograph which characterized in that realizes through predetermineeing layer structure, includes: the device comprises a first metal zigzag line, a second metal zigzag line, a grounding shielding layer, two MIM capacitors, an input feeder line and an output feeder line;

wherein the input end of the filter is connected with the input feeder line, the other end of the input feeder line is connected with the first metal meander line,

the filter output end is connected with the output feeder line, the other end of the output feeder line is connected with the other end of the first metal zigzag line, the grounding shielding layer is located at the peripheries of the first metal zigzag line, the second metal zigzag line and the input and output feeder line, the second metal zigzag line is enclosed inside by the first metal zigzag line, the first metal zigzag line and the second metal zigzag line are symmetrical about a Y axis, the metal lines at the Y axis of the first metal zigzag line are connected to the grounding shielding layer, and the two MIM capacitors are respectively located below the input feeder line and the output feeder line.

2. The bandpass filter according to claim 1, wherein the first metal meander line is defined by a metal layer TM2 of a predetermined layer structure, the second metal meander line is defined by a metal layer TM1, and the first metal meander line and the second metal meander line perform energy transmission by coupling.

3. The bandpass filter of claim 1, wherein the first MIM capacitor and the second MIM capacitor have the same capacitance value.

4. The bandpass filter of claim 3, wherein metal layer TM1 forms an upper layer of the first and second MIM capacitors and metal layer M5 forms a lower layer of the first and second MIM capacitors.

5. The bandpass filter according to claim 1, wherein the first metal meander line comprises a first metal line, a second metal line, a metal line at Y-axis, a third metal line and a fourth metal line in parallel, a distance between two adjacent metal lines forms a first interval, a second interval, a third interval and a fourth interval, the same side ends of the first metal line, the metal line at Y-axis and the fourth metal line are connected by a first vertical metal line, and the other end of the first metal line is connected with the second metal line at the same side end; the other side of the fourth metal wire is connected with the third metal wire at the same side end.

6. A bandpass filter according to claim 5, characterized in that the first metal meander line is connected to the input feed line and the output feed line, respectively, by metal lines on both sides.

7. The bandpass filter according to claim 5, wherein the second metal meander lines comprise a fifth metal line and a sixth metal line in the first interval, a seventh metal line in the second interval, an eighth metal line in the third interval, and a ninth metal line and a tenth metal line in the fourth interval, wherein the same side ends of the fifth metal line, the sixth metal line, the seventh metal line, and the eighth metal line are connected by a second vertical metal line, wherein the first vertical metal line and the second vertical metal line are at different ends, and wherein the fifth metal line and the sixth metal line are connected at the same side end as the first vertical metal line, and wherein the ninth metal line and the tenth metal line are connected.

8. The bandpass filter according to claim 5, wherein the width of the first spacing is twice the width of the second spacing; the width of the fourth space is twice the width of the third space.

Technical Field

The invention relates to the technical field of seismic exploration, in particular to an on-chip band-pass filter applied to a cable-free seismograph.

Background

With the continuing increase in demand for oil and gas, the need for rapid high quality seismic data acquisition worldwide has also increased. Consequently, the coverage, density, and overall cost of seismic surveys are increasing. Conventional seismic data transmission uses cable systems for transmission, which are reliable and efficient in transmitting such large amounts of data, but they represent nearly 50% of the cost and 75% of the equipment weight, require more vehicles and manpower to transport and deploy the cable by hand, increase logistical costs greatly, and the cable again imposes restrictions on the geographic deployment of the geophones, while newer, untethered seismometers do address these issues. The wireless main board radio frequency module is a key module of a novel cableless seismograph, plays a vital role in data receiving and transmitting, an excellent filter module can filter out useless messy interference signals, the special frequency band from 2.412GHz to 2.437GHz can enter an amplifying circuit, and signal transmission of the cableless seismograph is guaranteed.

The existing filter technology has the following defects: although the conventional ring resonator achieves better performance, the chip size of the filter is relatively large. Therefore, in order to effectively reduce the physical size of the filter, a filter designed by using a notch method is derived, for example, a broadside-coupled meander line resonator-based design realizes a minimum physical size. However, this approach provides only a limited amount of attenuation over a small bandwidth of the stop band, with a large compromise in performance. Therefore, providing a sufficiently wide bandwidth while ensuring miniaturization of the on-chip bandpass filter appears to be extremely challenging.

Disclosure of Invention

The present invention is directed to solving at least one of the problems of the prior art or the related art.

Therefore, the invention aims to provide an on-chip band-pass filter applied to a cable-free seismograph.

In order to achieve the above object, the present invention provides an on-chip band-pass filter for a cable-less seismograph, comprising: 1. the utility model provides a be applied to band-pass filter on chip of no cable seismograph which characterized in that realizes through predetermineeing layer structure, includes: the device comprises a first metal zigzag line, a second metal zigzag line, a grounding shielding layer, two MIM capacitors, an input feeder line and an output feeder line;

the input end of the filter is connected with the input feeder line, and the other end of the input feeder line is connected with the first metal zigzag line. The filter output end is connected with the output feeder line, the other end of the output feeder line is connected with the other end of the first metal zigzag line, the grounding shielding layer is located at the peripheries of the first metal zigzag line, the second metal zigzag line and the input and output feeder line, the second metal zigzag line is enclosed inside by the first metal zigzag line, the first metal zigzag line and the second metal zigzag line are symmetrical about a Y axis, the metal lines at the Y axis of the first metal zigzag line are connected to the grounding shielding layer, and the two MIM capacitors are respectively located below the input feeder line and the output feeder line.

Furthermore, the first metal meander line is formed by engraving a metal layer TM2 with a preset layer structure, the second metal meander line is formed by engraving a metal layer TM1, and the first metal meander line and the second metal meander line transmit energy in a coupling manner.

Further, the capacitance values of the first MIM capacitor and the second MIM capacitor are the same.

Further, metal layer TM1 forms an upper layer of the first and second MIM capacitors, and metal layer M5 forms a lower layer of the first and second MIM capacitors.

Furthermore, the first metal zigzag line comprises a first metal line, a second metal line, a metal line at the Y axis, a third metal line and a fourth metal line which are parallel, a distance is formed between every two adjacent metal lines to form a first interval, a second interval, a third interval and a fourth interval, the same side ends of the first metal line, the metal line at the Y axis and the fourth metal line are connected through a first vertical metal line, and the other end of the first metal line is connected with the second metal line at the same side end; the other side of the fourth metal wire is connected with the third metal wire at the same side end.

Furthermore, the first metal meander line is respectively connected with the input feeder line and the output feeder line through metal wires on two sides.

Furthermore, the second metal zigzag line includes a fifth metal line and a sixth metal line located in the first space, a seventh metal line located in the second space, an eighth metal line located in the third space, and a ninth metal line and a tenth metal line located in the fourth space, the same side ends of the fifth metal line, the sixth metal line, the seventh metal line, and the eighth metal line are connected through a second vertical metal line, the first vertical metal line and the second vertical metal line are located at different ends, and at the same side end with the first vertical metal line, the fifth metal line is connected with the sixth metal line, and the ninth metal line is connected with the tenth metal line.

Further, the width of the first interval is twice that of the second interval; the width of the fourth space is twice the width of the third space.

The invention has the following beneficial effects:

the filter provided by the invention can be applied to a cable-free seismograph, and can be used for filtering useless clutter and interference signals in a limited way, so that the special frequency band from 2.412GHz to 2.437GHz can be ensured to enter an amplifying circuit, and the signal transmission of the cable-free seismograph is ensured. The area of the band-pass filter on the chip is reduced by using the limitation of a multilayer structure, and the design of the two metal meander line structures can effectively reduce the area of the chip and obtain high enough coupling strength.

Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

FIG. 1 shows a schematic structural diagram of an on-chip band-pass filter of the present invention applied to a cableless seismograph;

fig. 2 is a schematic diagram showing a preset layer structure adopted by the on-chip band-pass filter applied to the cableless seismograph.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited to the specific embodiments disclosed below.

Fig. 1 shows a schematic structural diagram of an on-chip band-pass filter applied to a cableless seismograph according to the present invention. The method comprises the following steps: a first metal meander line 3, a second metal meander line 4, a ground shield layer 5, a first and a second MIM capacitor (at the bottom layer, not shown in fig. 1), an input feed line 1 and an output feed line 2; the input end of the filter is connected with an input feeder line, and the other end of the input feeder line is connected with the first metal meander line 3. The output end of the filter is connected with the output feeder line, and the other end of the output feeder line is connected with the other end of the first metal meander line 3. The grounding shielding layer 5 is located at the periphery of the first metal zigzag line 3, the second metal zigzag line 4 and the input/output feeder line, the first metal zigzag line 3 encloses the second metal zigzag line 4 at the inner side, the first metal zigzag line 3 and the second metal zigzag line 4 are symmetrical about the metal line 33 at the Y axis, and the first metal zigzag line 33 is connected to the grounding shielding layer. The two MIM capacitors are respectively positioned below the input feeder line and the output feeder line.

The first metal zigzag line 3 comprises a first metal line 31, a second metal line 32, a metal line 33 at the Y axis, a third metal line 34 and a fourth metal line 35 which are parallel, a distance is reserved between every two adjacent metal lines to form a first interval, a second interval, a third interval and a fourth interval, the same side ends of the first metal line, the metal line at the Y axis and the fourth metal line are connected through a first vertical metal line 36, and the other end of the first metal line is connected with the second metal line at the same side end; the other side of the fourth metal wire is connected with the third metal wire at the same side end.

The first metal zigzag line is respectively connected with the input feeder line and the output feeder line through metal wires on two sides.

The second metal zigzag line 4 includes a fifth metal line 41 and a sixth metal line 42 in the first space, a seventh metal line 43 in the second space, an eighth metal line 44 in the third space, a ninth metal line 45 and a tenth metal line 46 in the fourth space, the same side ends of the fifth metal line, the sixth metal line, the seventh metal line and the eighth metal line are connected by a second vertical metal line 47, the first vertical metal line and the second vertical metal line are located at different ends, at the same side end with the first vertical metal line, the fifth metal line is connected with the sixth metal line, and the ninth metal line and the tenth metal line are connected.

The width of the first interval is twice that of the second interval; the width of the fourth space is twice the width of the third space.

Referring to fig. 1 and fig. 2, the first metal meander line is defined by a metal layer TM2 of a predetermined layer structure, the second metal meander line is defined by a metal layer TM1, and the first metal meander line and the second metal meander line transmit energy by coupling. The grounding shielding layer is of a multilayer structure, the uppermost layer is formed on the metal layer TM2, the metal layer TM1 forms the second layer of the grounding shielding layer, the metal layer M5 is the third layer of the grounding shielding layer, and the like, the metal layer M1 forms the last layer of the grounding shielding layer. Metal layer TM1 forms the upper layer of the MIM capacitor and metal layer M5 forms the lower layer of the MIM capacitor.

Fig. 2 shows a schematic diagram of a preset layer structure of the on-chip millimeter wave band-pass filter according to the present invention. As shown in fig. 2, the preset layer structure includes: the metal layer TM2, the metal layer TM1, the metal layer M5, the metal layer M4, the metal layer M3, the metal layer M2, the metal layer M1 and the silicon substrate layer are sequentially arranged at the bottom of the first preset layer structure; silicon dioxide layers are arranged between the metal layer TM2 and the metal layer TM1, between the metal layer TM1 and the metal layer M5, between the metal layer M5 and the metal layer M4, between the metal layer M4 and the metal layer M3, between the metal layer M3 and the metal layer M2 and between the metal layer M2 and the metal layer M1; the metal-insulator-metal layer MIM is comprised of the metal layer TM1, metal layer M5, and a silicon dioxide layer therebetween. The metal layer TM2, the metal layer TM1, the metal layer M5 and the metal layer M2 are all aluminum metal layers. The thickness of the metal layer TM2 is 3 μm; the thickness of the metal layer TM1 is 2 μm; the metal layer M5, the metal layer M4, the metal layer M3 and the metal layer M2 are all 0.45 mu M; the thickness of the metal layer M1 is 0.4 μ M; the thickness of the silicon substrate layer is 200 μm; the distance between the lower surface of the metal layer TM2 and the upper surface of the metal layer TM1 is 3 μm; the distance between the lower surface of the metal layer TM1 and the upper surface of the metal layer M2 is 4 μ M; and the distance between the lower surface of the metal layer M2 and the upper surface of the silicon substrate layer is 2.07 μ M. The pre-set layer structure of the present invention is designed and implemented in standard 0.13- μm (bi) -CMOS technology.

In this embodiment, by setting the thickness of each metal layer of the preset layer structure and the thickness of the silicon substrate layer to fixed values, it is possible to achieve better miniaturization design of the bandpass filter of the present invention.

The filter has the advantages that effective filtering is realized at two lower sides by utilizing the two zigzag-line-shaped metal strips, the area of the on-chip band-pass filter is reduced, and meanwhile, stronger coupling is realized. The two MIM capacitors positioned below the feeder line reasonably utilize the multilayer structure, further reduce the area of a chip, and simultaneously adjust the bandwidth flexibly by adjusting the parameters of each component. In addition, the on-chip band-pass filter can be applied to a wireless radio frequency module in a cable-free seismograph, and can better filter out useless clutter interference signals.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.