阅读说明：本技术 Mems电容传感器及其制备方法、电子设备 (MEMS capacitive sensor, preparation method thereof and electronic equipment ) 是由 罗松成 詹竣凯 游博丞 谢冠宏 方维伦 于 2019-05-31 设计创作，主要内容包括：一种MEMS电容传感器及其制备方法,该传感器包括第一电极结构(200),该第一电极结构(200)包括位于中间区域的第一导电区域(230a)以及所述第一导电区域周围的绝缘区域(240),第一导电区域(230a)和绝缘区域(240)为一整体结构,且其中至少一个通过掺杂方式形成。上述MEMS电容式传感器,通过在第一电极结构中设置在中间区域的第一导电区域导电,第一导电区域周围的绝缘区域绝缘,降低了MEMS电容式传感器的寄生电容,并且无需设置多层绝缘薄膜,避免了残余应力控制复杂、多层薄膜剥离和弯曲的问题。(A MEMS capacitive sensor and a preparation method thereof, the sensor comprises a first electrode structure (200), the first electrode structure (200) comprises a first conductive area (230a) located in a middle area and an insulating area (240) around the first conductive area, the first conductive area (230a) and the insulating area (240) are of an integral structure, and at least one of the first conductive area and the insulating area is formed in a doping mode. According to the MEMS capacitive sensor, the first conductive area arranged in the middle area in the first electrode structure is conductive, and the insulating area around the first conductive area is insulating, so that the parasitic capacitance of the MEMS capacitive sensor is reduced, a plurality of insulating films are not required to be arranged, and the problems of complex residual stress control, peeling and bending of the plurality of insulating films are avoided.)

A MEMS capacitive sensor, comprising:

the first electrode structure comprises a first conductive region positioned in a middle region and an insulating region around the first conductive region, the first conductive region and the insulating region are of an integral structure, and at least one of the first conductive region and the insulating region is formed in a doping mode.

The MEMS capacitive sensor of claim 1 wherein the first conductive region is formed by doping and is a P-type conductivity region or an N-type conductivity region.

The MEMS capacitive sensor of claim 2 wherein when the first conductive region is a P-type conductivity region, the dopant element is boron; when the first conductive region is an N-type conductive region, the doping element is phosphorus.

The MEMS capacitive sensor of claim 1 wherein the first electrode structure further comprises a second conductive region, the insulating region is between the first conductive region and the second conductive region, the insulating region is formed by doping, and the insulating region has a first predetermined width.

The MEMS capacitive sensor of claim 4 wherein the first conductive region, the second conductive region, and the insulating region each comprise a first conductivity type dopant element, the insulating region further comprising a second conductivity type dopant element having an opposite electrical polarity to the first conductivity type dopant element.

The MEMS capacitive sensor of claim 5 wherein the concentration of the first conductivity type dopant element and the second conductivity type dopant element of the insulating region are the same.

The MEMS capacitive sensor of claim 5 wherein the first conductivity type is a P-type conductivity type.

The MEMS capacitive sensor of claim 7 wherein the second conductivity type dopant element is phosphorous.

The MEMS capacitive sensor of claim 5 wherein the first conductivity type is an N-type conductivity type.

The MEMS capacitive sensor of claim 9 wherein the second conductivity type dopant element is boron.

The MEMS capacitive sensor of claim 4 wherein the first predetermined width is between 2 and 20 microns.

The MEMS capacitive sensor of claim 11 wherein the first predetermined width is 10 microns.

The MEMS capacitive sensor of claim 4 wherein the second conductive region further comprises a second insulating region to divide the second conductive region into a plurality of second conductive sub-regions separated by the second insulating region.

The MEMS capacitive sensor of claim 1 further comprising a second electrode structure disposed at least partially opposite the first conductive region to form a capacitive structure.

The MEMS capacitive sensor of claim 1 further comprising a support structure, the support structure comprising:

a substrate, and

a sacrificial layer formed on the substrate; the first electrode structure is partially located on the sacrificial layer; the substrate and the sacrificial layer are provided with back holes for exposing the first conductive regions.

The MEMS capacitive sensor of claim 15 wherein the insulating region is at least partially exposed by the back hole.

The MEMS capacitive sensor of claim 15 wherein the first electrode structure further comprises a second conductive region, the insulating region is between the first conductive region and the second conductive region, the insulating region is formed by doping, and the insulating region has a first predetermined width; the first conductive region, the second conductive region, and the insulating region each comprise a first conductivity-type dopant element, the insulating region further comprising a second conductivity-type dopant element having an opposite electrical polarity to the first conductivity-type dopant element;

a through hole is formed in the sacrificial layer so that the first electrode structure and the substrate are in direct contact in the through hole, and the electric polarity of the substrate is the same as or opposite to that of the first conductive type doping element;

the contact surface of the first electrode structure and the substrate is further provided with a third insulating region, the third insulating region has a second preset width, and the third insulating region comprises a first conductive type doping element and a second conductive type doping element which have opposite electric polarities.

An electronic device comprising an electronic device body, further comprising the MEMS capacitive sensor according to any one of claims 1 to 17 disposed on the electronic device body.

A method for manufacturing a MEMS capacitive sensor, comprising:

forming a first electrode structure; the first electrode structure comprises a first conductive region positioned in a middle region and an insulating region around the first conductive region, the first conductive region and the insulating region are of an integral structure, and at least one of the first conductive region and the insulating region is formed in a doping mode.

The method of claim 19, wherein the step of forming the first electrode structure comprises:

providing an insulating layer; and

doping the middle region of the insulating layer to form the first conductive region.

The method of claim 19, wherein the first electrode structure further comprises a second conductive region, wherein the insulating region is located between the first conductive region and the second conductive region, and wherein the step of forming the first electrode structure comprises:

providing a first conductive type conductive layer; and

and doping a second conductive type doping element with the opposite electric polarity to the first conductive type conductive layer to form the insulation region, wherein the insulation region has a first preset width.

The method of claim 21, wherein the first conductivity type conductive layer is doped with a first conductivity type dopant element, and wherein the concentration of the first conductivity type dopant element and the second conductivity type dopant element in the insulating region is the same.

The method of claim 21, wherein the first conductivity type conductive layer is a P-type conductivity type layer or an N-type conductivity type layer.

The method as claimed in claim 23, wherein the second-conductivity-type doping element is phosphorus when the first-conductivity-type conductive layer is a P-type conductivity layer.

The method according to claim 23, wherein when the first-conductivity-type conductive layer is an N-conductivity-type layer, the second-conductivity-type doping element is boron.

The method of claim 19, wherein the doping is performed by ion implantation.

The method of claim 19, further comprising:

forming a second electrode structure; the second electrode structure is at least partially arranged opposite to the first conductive region to form a capacitor structure.

The method of claim 19, further comprising:

providing a support structure comprising a substrate and a sacrificial layer formed on the substrate, the first electrode structure being located partially on the sacrificial layer;

etching the substrate to form a back hole corresponding to the first conductive region; and

and removing the sacrificial layer opposite to the back hole to expose the first conductive area.

The method of claim 28, wherein the sacrificial layer is removed using a wet etch process.

The method of claim 28, wherein the first electrode structure further comprises a second conductive region, wherein the insulating region is located between the first conductive region and the second conductive region, and wherein the step of forming the first electrode structure comprises:

providing a first conductive type conductive layer; and

doping a second conductive type doping element with the opposite electric polarity to the first conductive type conduction layer to form the insulation region, wherein the insulation region has a first preset width;

the sacrificial layer is provided with a through hole so that the first conductive type conducting layer is in direct contact with the substrate in the through hole, and the electric polarity of the substrate is the same as or opposite to that of the first conductive type conducting layer;

the preparation method of the MEMS capacitive sensor further comprises the step of forming a third insulating region with a second preset width on the contact surface of the first conductive type conductive layer and the substrate, wherein the third insulating region is formed by doping an element with the electric polarity opposite to that of the first conductive type conductive layer or doping an element with the electric polarity opposite to that of the substrate.