阅读说明：本技术 Mems电容传感器及其制备方法、电子设备 (MEMS capacitive sensor, preparation method thereof and electronic equipment ) 是由 罗松成 詹竣凯 游博丞 谢冠宏 方维伦 于 2019-05-31 设计创作，主要内容包括：一种MEMS电容传感器及其制备方法,该传感器包括第一电极结构(200),该第一电极结构(200)包括位于中间区域的第一导电区域(230a)以及所述第一导电区域周围的绝缘区域(240),第一导电区域(230a)和绝缘区域(240)为一整体结构,且其中至少一个通过掺杂方式形成。上述MEMS电容式传感器,通过在第一电极结构中设置在中间区域的第一导电区域导电,第一导电区域周围的绝缘区域绝缘,降低了MEMS电容式传感器的寄生电容,并且无需设置多层绝缘薄膜,避免了残余应力控制复杂、多层薄膜剥离和弯曲的问题。(A MEMS capacitive sensor and a preparation method thereof, the sensor comprises a first electrode structure (200), the first electrode structure (200) comprises a first conductive area (230a) located in a middle area and an insulating area (240) around the first conductive area, the first conductive area (230a) and the insulating area (240) are of an integral structure, and at least one of the first conductive area and the insulating area is formed in a doping mode. According to the MEMS capacitive sensor, the first conductive area arranged in the middle area in the first electrode structure is conductive, and the insulating area around the first conductive area is insulating, so that the parasitic capacitance of the MEMS capacitive sensor is reduced, a plurality of insulating films are not required to be arranged, and the problems of complex residual stress control, peeling and bending of the plurality of insulating films are avoided.)