阅读说明：本技术 一种Mxene材料及其加工方法、装置和用途 (Mxene material and processing method, device and application thereof ) 是由 肖嘉薇 陈云 高增光 贺梓霖 罗翔远 吴然皓 丁树权 唐建伟 陈新 高健 陈桪 于 2021-09-15 设计创作，主要内容包括：一种Mxene材料及其加工方法、装置和用途,加工方法通过步骤S1-S5制得单/少层Mxene材料；装置包括,包括：充放电控制电箱和放电反应腔,用于执行上述的加工方法；Mxene材料,由上述的加工方法制备而成。本发明提出的一种单/少层MXene材料放电制备的方法,满足了MXene材料的制备的便捷快速、大面积且无污染的制备需求,同时也实现了单/少层MXene材料的制备,解决了现有MXene材料的制备方式中环境污染性、危险性、有一定层度缺陷以及无法发规模制备的问题。(An Mxene material and a processing method, a device and an application thereof, wherein the processing method prepares a single/few-layer Mxene material through steps S1-S5; the device includes, including: the charging and discharging control electric box and the discharging reaction cavity are used for executing the processing method; mxene material prepared by the processing method. The single/few-layer MXene material discharge preparation method provided by the invention meets the preparation requirements of the MXene material on convenience, rapidness, large area and no pollution, simultaneously realizes the preparation of the single/few-layer MXene material, and solves the problems of environmental pollution, dangerousness, certain layering defect and incapability of large-scale preparation in the existing MXene material preparation mode.)

1. A processing method of single/few-layer MXene is characterized by comprising the following steps:

s1: putting MXene precursor MAX phase material into the solution for ultrasonic dispersion to obtain dispersion liquid;

MXene has the molecular formula M_n+1X_nT_m(ii) a Wherein M represents an early transition metal; x represents carbon or nitrogen; t represents a surface active group of MXene; n is an integer between 1 and 3, and m is an integer;

s2: placing the dispersion liquid in an ice-water bath, and adding an element salt for providing the required surface active group into the dispersion liquid while stirring;

s3: putting the mixed solution into a vacuum drying oven for vacuum drying to obtain a first intermediate product;

s4: putting the first intermediate product into a reaction cavity, introducing inert gas to remove air in the cavity, and performing discharge operation to obtain a second intermediate product;

s5: and dispersing the second intermediate product in deionized water, and performing purification separation and vacuum drying to obtain the required MXene material.

2. The method as claimed in claim 1, wherein the chemical formula of the MXene precursor MAX in the step S1 is M_n+1AX_nWherein A is a main group element.

3. The method of claim 1, wherein in step S2, the salt of an elemental compound is a halide of a metal.

4. The method of claim 1, wherein the step S2 comprises adding the salt of the element compound in multiple batches to complete the pre-reaction.

5. The method of claim 1, wherein in step S2, the mass ratio of MAX phase material to elemental salt is (1-1.2: 4-6).

6. The method for processing single/few layer MXene as claimed in claim 1, wherein in step S4, discharge processing is performed under high voltage condition, voltage required for discharge is 200-300V, and total capacitance of capacitor bank used for discharge is 100-140 mF.

7. The method for processing single/few-layer MXene according to any one of claims 1-6, wherein in step (5), in step S5, further comprising the following steps:

s51: adding dilute hydrochloric acid, re-dissolving, and performing first washing on the second intermediate product;

s52: taking the precipitate obtained in the first round of washing, and carrying out second round of washing by using deionized water;

s53: and (4) adding deionized water into the precipitate obtained in the second round of washing, performing ultrasonic treatment in an ice-water bath and inert gas environment, centrifuging, collecting upper-layer liquid, and performing vacuum drying to obtain the MXene material.

8. An MXene material prepared by the method of any one of claims 1 to 7.

9. A processing apparatus for preparing single/few layer MXene by electric discharge, wherein the processing apparatus is used for performing the processing method of single/few layer MXene as claimed in any one of claims 1 to 7, and comprises: a charge-discharge control electric box and a discharge reaction cavity;

the charge-discharge control electronic box includes: the device comprises a capacitor bank, a control module and a charging power supply;

the capacitor bank is used for instantaneous discharge;

the control module is used for starting and stopping the charging operation and the discharging operation and controlling the voltage;

the charging power supply is used for charging the capacitor bank;

the discharge reaction cavity is provided with a vent pipe and an exhaust pipe; two ends of the discharge reaction cavity are also provided with discharge electrodes;

the breather pipe is used for introducing inert gas into the reaction cavity; the exhaust pipe is used for exhausting air and/or inert gas of the reaction chamber; the discharge electrode is electrically connected to the capacitor bank.

10. Use of MXene material in the preparation of two-dimensional material, wherein the MXene material is prepared by the method of processing single/few layer MXene according to any one of claims 1-7.

Technical Field

The invention relates to the technical field of two-dimensional materials, in particular to an Mxene material and a processing method, a device and application thereof.

Background

Two-dimensional materials are limited in two-dimensional planes due to carrier migration and heat diffusion, so that the materials exhibit a plurality of peculiar properties, have great development potential in various fields, and the excellent physical, chemical and electronic properties of the materials become the subject of intensive research in recent years.

MXene is a generic term for transition metal carbides, transition metal carbonitrides and transition metal carbonitrides. As a novel two-dimensional material, MXene has structural characteristics similar to those of graphene, and due to characteristics of excellent chemical stability, high conductivity, excellent thermal stability, mechanical properties and the like, MXene has attracted great attention in various application fields.

The preparation of MXene material is mainly realized by selectively etching the A layer in the ternary layered carbide and nitride material MAX. At present, more than 70 kinds of MAX phase materials are known, so that the diversity of MXene materials is ensured. Generally, from top to bottom MXene is prepared in several common ways: 1. hydrofluoric acid etching, for example, chinese patent CN112850712A discloses a method for preparing MXene material by etching MAX with hydrofluoric acid and then placing it in surfactant, which improves the specific capacitance of MXene material, but hydrofluoric acid has strong corrosivity and severe environmental pollution, and etching with hydrofluoric acid can cause defects on the surface of MXene, which will reduce its performance; 2. in the MXene preparation method disclosed in the Chinese patent CN107522202A, although the complexity of precursor preparation is reduced by using a normal pressure sintering method for precursor preparation, the subsequent etching method by using a strong acid and a fluoride solution is easy to cause over-etching, has certain danger and brings certain environmental pollution, so that large-scale production and application are difficult to realize; 3. molten salt etching, the method can prepare nitride-based MXene, but the product still has a plurality of defects; 4. alkaline solution etching is a fluorine-free etching method in an alkaline environment. The bottom-up MXene preparation method can solve the problem that two-dimensional transition metal carbide and nitride cannot be prepared by selective etching from top to bottom, but can not realize the synthesis of single-layer two-dimensional transition metal carbide and nitride. Therefore, the preparation method of the single/few-layer MXene material with no pollution, high speed and high yield needs to be researched and developed urgently.

Disclosure of Invention

The invention aims to provide a processing method of single/few-layer MXene, which meets the preparation requirements of the MXene material on convenience, rapidness, large area and no pollution, simultaneously realizes the preparation of the single/few-layer MXene material, and solves the problems of environmental pollution, danger, certain layer degree defect and incapability of large-scale preparation in the conventional MXene material preparation mode.

The invention also provides an MXene material which is prepared by the single/few-layer MXene processing method;

the invention also provides a processing device for preparing the single/few-layer MXene by discharge, which has a simple structure, can realize large-area, rapid and high-efficiency preparation of the single/few-layer MXene material, and solves the problems of complicated operation and low efficiency in the existing MXene material production process.

The invention also provides application of the MXene material in preparation of a two-dimensional material.

In order to achieve the purpose, the invention adopts the following technical scheme:

a processing method of single/few-layer MXene comprises the following steps:

s1: putting MXene precursor MAX phase material into the solution for ultrasonic dispersion to obtain dispersion liquid;

MXene has the molecular formula M_n+1X_nT_m(ii) a Wherein M represents an early transition metal; x represents carbon or nitrogen; t represents a surface active group of MXene; n is an integer between 1 and 3, and m is an integer;

s2: placing the dispersion liquid in an ice-water bath, and adding an element salt for providing the required surface active group into the dispersion liquid while stirring;

s3: putting the mixed solution into a vacuum drying oven for vacuum drying to obtain a first intermediate product;

s4: putting the first intermediate product into a reaction cavity, introducing inert gas to remove air in the cavity, and performing discharge operation to obtain a second intermediate product;

s5: and dispersing the second intermediate product in deionized water, and performing purification separation and vacuum drying to obtain the required MXene material.

Preferably, in step S1, the chemical formula of the precursor MAX of MXene is M_n+1AX_nWherein A is a main group element.

Preferably, in step S2, the elemental salt is a halide of a metal.

Preferably, in step S2, when the salt of the element compound is provided, the salt of the element compound is added in multiple batches to complete the pre-reaction.

Preferably, in the step S2, the mass ratio of the MAX phase material to the elemental salt is (1-1.2: 4-6).

Preferably, in step S4, the discharge machining is performed under a high voltage condition, the voltage required for discharge is 200-300V, and the total capacitance of the capacitor bank used for discharge is 100-140 mF.

Preferably, in the step (5), the step S5 further includes:

s51: adding dilute hydrochloric acid, re-dissolving, and performing first washing on the second intermediate product;

s52: taking the precipitate obtained in the first round of washing, and carrying out second round of washing by using deionized water;

s53: and (4) adding deionized water into the precipitate obtained in the second round of washing, performing ultrasonic treatment in an ice-water bath and inert gas environment, centrifuging, collecting upper-layer liquid, and performing vacuum drying to obtain the MXene material.

An MXene material is prepared by the processing method of the single/few-layer MXene.

The processing device for preparing the single/few-layer MXene by the electric discharge is used for executing the processing method of the single/few-layer MXene, and comprises the following steps: a charge-discharge control electric box and a discharge reaction cavity;

the charge-discharge control electronic box includes: the device comprises a capacitor bank, a control module and a charging power supply;

the capacitor bank is used for instantaneous discharge;

the control module is used for starting and stopping the charging operation and the discharging operation and controlling the voltage;

the charging power supply is used for charging the capacitor bank;

the discharge reaction cavity is provided with a vent pipe and an exhaust pipe; two ends of the discharge reaction cavity are also provided with discharge electrodes;

the breather pipe is used for introducing inert gas into the reaction cavity; the exhaust pipe is used for exhausting air and/or inert gas of the reaction chamber; the discharge electrode is electrically connected to the capacitor bank.

The application of the MXene material in preparing the two-dimensional material is realized by the single/few-layer MXene processing method.

The technical scheme provided by the invention can have the following beneficial effects:

the invention aims to provide a method for preparing a single/few-layer MXene material by discharge, which meets the preparation requirements of the MXene material on convenience, rapidness, large area and no pollution, realizes the preparation of the single/few-layer MXene material, and solves the problems of environmental pollution, danger, certain layer degree defect and incapability of large-scale preparation in the conventional MXene material preparation mode.

Drawings

Fig. 1 is a flow diagram of one embodiment of a method of processing single/few layer MXene of the present invention;

fig. 2 is a schematic diagram of one embodiment of the processing device for preparing single/few-layer MXene by electric discharge.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

A processing method of single/few-layer MXene comprises the following steps:

s1: putting MXene precursor MAX phase material into the solution for ultrasonic dispersion to obtain dispersion liquid;

MXene has the molecular formula M_n+1X_nT_m(ii) a Wherein M represents an early transition metal; x represents carbon or nitrogen; t represents a surface active group of MXene; n is an integer between 1 and 3, and m is an integer;

the former transition metal and the latter transition metal are distinguished according to the number of d orbital electrons. The early transition metal refers to a transition metal with d electrons not more than 5, such as Ti, Sc, V, Zr, Cr and the like; the post-transition metals are those having a relatively large number of d electrons, such as Mn, Fe, Co, Ni, Cu, Zn, etc.

The solution in step S1 can be selected from deionized water, absolute ethanol, etc., and the specific solvent is determined according to the physical properties of the elemental salt corresponding to the surface active group provided in step S2.

S2: placing the dispersion liquid in an ice-water bath, and adding an element salt for providing the required surface active group into the dispersion liquid while stirring;

relative concentration of substances during MXene Material preparationExternal factors such as reaction time, preparation temperature and the like have great influence on the preparation of the MXene material, so that the external environmental conditions need to be strictly controlled under the condition of ensuring the product performance as much as possible. Thus, for temperature control, the present invention takes the form of an ice-water bath. The salt of an elemental compound corresponding to a surface active group is M_n+1X_nT_mWherein T is provided, which T may be oxygen (O), fluorine (F), etc., e.g. Li₂O, LiF, LiCl, etc.

S3: putting the mixed solution into a vacuum drying oven for vacuum drying to obtain a first intermediate product;

the drying temperature is determined according to the solvent of the dispersion solution, and in order to prevent the solution from boiling, the temperature is 5-15 ℃ below the boiling temperature of the solvent. If the drying temperature is too low, the solution remains and the subsequent operation is influenced if the drying time is short, and if the drying time is long, the cycle of preparing single/few layers of MXene is prolonged, so that the overall preparation efficiency is reduced to a certain extent.

S4: putting the first intermediate product into a reaction cavity, introducing inert gas to remove air in the cavity, and performing discharge operation to obtain a second intermediate product;

introducing inert gas to form a high-pressure environment, wherein the air pressure in the reaction cavity is 6-8 GPa; inert gases including helium, argon, and the like;

s5: and dispersing the second intermediate product in deionized water, and performing purification separation and vacuum drying to obtain the required MXene material.

The invention aims to provide a method for preparing a single/few-layer MXene material by discharge, which meets the preparation requirements of the MXene material on convenience, rapidness, large area and no pollution, realizes the preparation of the single/few-layer MXene material, and solves the problems of environmental pollution, danger, certain layer degree defect and incapability of large-scale preparation in the conventional MXene material preparation mode. Therefore, the present invention has the following advantages:

1. by the method for preparing the MXene material, the MAX phase material of the precursor can be converted into the MXene material without acid or alkali in the step of etching the A layer, so that the method is simple in process and less in pollution. Meanwhile, the condition of excessive etching caused by acid or alkali corrosion is avoided in the preparation step, and the defects of the product MXene are greatly reduced.

2. The invention utilizes the capacitor bank to discharge accurately. In the process of electric discharge machining, the element salt corresponding to the surface active group provided by the electric discharge transient reacts with the MXene precursor MAX phase material quickly, so that the etching of the A layer in the MAX phase material is completed, and the MXene material is obtained. MXene is a two-dimensional material with a large specific surface area, and therefore strong van der waals forces are widely present between the individual sheets. The strong impact force generated in the discharging process can overcome the strong van der Waals force of MXene between adjacent sheet layers, so that the phenomenon that the prepared MXene is aggregated or self-accumulated is avoided.

3. After pretreatment such as ultrasonic treatment, stirring and the like, the MAX phase material and the elemental salt corresponding to the surface active group required by the material are fully mixed by using an electric discharge machining method and then are subjected to reactive etching, so that the quality of the product is ensured.

4. The high-efficiency preparation is realized by the electro-discharge machining, and a feasible solution is provided for the short-time large-scale production of the single/few-layer MXene material.

Preferably, in step S1, the chemical formula of the precursor MAX of MXene is M_n+1AX_nWherein A is a main group element.

The main group element is a chemical classification of elements, and refers to elements in the s-region and the p-region of the periodic table, such as beryllium, magnesium, calcium, strontium, barium or radium.

Preferably, in step S2, the elemental salt is a halide of a metal.

Preferably, in step S2, when the salt of the element compound is provided, the salt of the element compound is added in multiple batches to complete the pre-reaction.

The excess element compound salt is not suitable for being added at one time, the excess element compound salt corresponding to the surface active group can be caused, further, the excess element compound salt and the generated single/few-layer MXene material are compounded to form the MXene composite material, the amount of the needed MXene material is reduced, and the MXene composite material can be caused to appear in the needed MXene material as impurities.

Preferably, in the step S2, the mass ratio of the MAX phase material to the elemental salt is (1-1.2: 4-6).

In this embodiment, a preferred embodiment is to limit the mass ratio of MAX phase material to elemental salt to 1: (4-6); and more preferably, in one of the more preferred embodiments, the ratio by mass of 1: (4-6), on the basis of the scheme, the amount of the MAX phase material is slightly excessive, namely the actual addition amount is increased to be slightly more than 1 and is 1-1.2, the MAX phase material can be ensured to be just compounded with the quantity of the elemental salt, the excess amount of the elemental salt corresponding to the required surface active group is avoided, further, the excessive elemental salt is prevented from being further compounded with the generated single/few layers of MXene materials in the discharge machining process to form the MXene composite material, the amount of the required MXene materials is reduced, and the MXene composite material is caused to appear in the required MXene materials as impurities.

Wherein the mass ratio of the MAX phase material to the elemental salt is (1-1.2): [ 4-6 ], "(" means that the MAX phase material does not contain an endpoint value of "1" in the interval of 1-1.2, i.e. that the actual addition amount is increased to slightly more than 1, and "]" or "[" means the contained endpoint value.

Preferably, in step S4, the discharge machining is performed under a high voltage condition, the voltage required for discharge is 200-300V, and the total capacitance of the capacitor bank used for discharge is 100-140 mF.

The method has mild etching and stripping conditions, and the MXene lamella is larger and has fewer defects. Although the use of electro-discharge machining has avoided many of the drawbacks from the pre-fabrication steps, it is preferred that the voltage be further optimized such that too high a voltage is detrimental to the quality of MXene formation and too low a voltage does not satisfy the conditions for electro-discharge etching of the a-layer of MAX phase material. Due to the fact that etching and stripping conditions are mild, the MXene lamella is large, and defects are few; therefore, in the stirring step of step S2, the stirring speed is preferably as small as possible under the condition of ensuring the effect, for example, in an optimized embodiment, the stirring speed is 400-600 r/min. The stirring may pre-react the MAX phase material with the elemental salt, which pre-reaction may contribute to the formation of mono/small layers of MXene by the subsequent discharge.

Preferably, in the step (5), the step S5 further includes:

s51: adding dilute hydrochloric acid, re-dissolving, and performing a first round of washing on the second intermediate product.

It is to be noted that the purpose of the initial washing with dilute hydrochloric acid is to remove impurities such as excess salts of elemental compounds corresponding to desired surface active groups in the step S2;

s52: taking the precipitate obtained in the first round of washing, and carrying out second round of washing by using deionized water;

s53: and (4) adding deionized water into the precipitate obtained in the second round of washing, performing ultrasonic treatment in an ice-water bath and inert gas environment, centrifuging, collecting upper-layer liquid, and performing vacuum drying to obtain the MXene material.

The ultrasonic treatment involved in S5 was carried out in an ice-water bath. MXene is a material easy to oxidize, and the continuous ice water bath can avoid the material from being oxidized due to ultrasonic heat release. Meanwhile, inert gas is also introduced to protect the product in the ultrasonic process. In step S53, after the ultrasonic treatment and the centrifugal treatment, the solution can be roughly divided into two parts, from top to bottom, the first part is single/few layers of MXene with a percentage of about five sixth, and the second part is a mixture of small amounts of aggregated MXene and unreacted raw material MAX. Thus, after centrifugation, the supernatant was taken.

In step S51, dilute hydrochloric acid is added to redissolve the second intermediate product, and then the second intermediate product is subjected to a first washing cycle until the supernatant becomes a clear colorless solution, wherein the rotation speed is set to 3000-4000 r/min, and the time is 4-6 min. And (3) taking the precipitate, and performing a second round of washing by using deionized water, wherein the second round of washing parameter is still that the rotating speed is set to be 3000-4000 r/min, the time is 4-6 min, and the washing is performed until the pH value is 5-7. Collecting the precipitate, and performing ultrasonic treatment, centrifugation and vacuum drying to obtain MXene material.

Meanwhile, all parameters of the invention only play a reference role; because the MXene is prepared in different amounts and the used raw materials are different, all technical parameters can be selected within the given reference range and can be modified according to actual conditions.

An MXene material prepared by the single/few layer MXene processing method of any of the above examples.

The processing device for preparing the single/few-layer MXene by the electric discharge is used for executing the processing method of the single/few-layer MXene, and comprises the following steps: a charging and discharging control box 1 and a discharging reaction cavity 2;

the charge and discharge control electric box 1 includes: a capacitor bank 11, a control module 12 and a charging power supply 13;

the capacitor bank 11 is used for instantaneous discharge;

the control module 12 is configured to start and stop the charging operation and the discharging operation and control the voltage;

the charging power supply 13 is configured to charge the capacitor bank 11;

the charging and discharging control box is used for setting specific operating parameters such as voltage, capacitance and the like according to preparation requirements in the discharging machining process;

the discharge reaction chamber 2 is provided with a vent pipe 22 and an exhaust pipe 23; two ends of the discharge reaction cavity 2 are also provided with discharge electrodes 21;

the vent pipe 22 is used for introducing inert gas into the reaction chamber 2; the exhaust pipe is used for exhausting air and/or inert gas of the reaction chamber 2; the discharge electrode is electrically connected to the capacitor bank.

To be more specific, the discharge reaction chamber 2 should be made of a high temperature resistant material such as quartz glass.

The specific operation of step S4 is: filling the first intermediate product into the discharge reaction cavity 2, simultaneously opening the vent pipe 22, introducing inert gas to discharge the original air in the reaction cavity 2, closing the vent pipe 23, continuously introducing the inert gas, and closing the vent pipe 22 after the required high-pressure environment of 6-8 GPa is achieved in the reaction cavity; the discharge voltage is set through the control module 12, and the size of the capacitor in the capacitor bank 11 is selected; after all settings are completed, the charging power supply 13 is caused to start charging the selected capacitor bank 11 by the control module 12; after the charging is completed, the control module 12 turns off the charging switch, turns on the discharging switch, and discharges the first intermediate product in the discharging reaction chamber 2.

The application of the MXene material in preparing the two-dimensional material is realized by the single/few-layer MXene processing method.

The technical solution of the present solution is further explained by the following embodiments with reference to the accompanying drawings.

Example A:

in this embodiment, the MAX phase material is Ti₃AlC₂LiF provides F surface active groups for the prepared Mxene material, and MXene prepared finally is Ti₃C₂F₂.

S1: mixing Ti₃AlC₂Putting the material into ethanol, and performing ultrasonic dispersion for 40 minutes to obtain dispersion liquid;

s2: placing the dispersion liquid in an ice water bath, adding LiF into the dispersion liquid for a few times while stirring, wherein the stirring speed is 400 r/min;

s3: placing the mixed solution in a vacuum drying oven for vacuum drying at the drying temperature of 70 ℃, and completely drying to obtain a first intermediate product;

s4: putting the first intermediate product into a reaction cavity, introducing inert gas to remove air in the cavity, closing an exhaust pipe, continuously introducing the inert gas to enable the air pressure in the reaction cavity to reach 6GPa, setting the discharge voltage to be 300V, using the capacitor to be 140mF, and performing discharge machining to obtain a second intermediate product;

s5: and dispersing the second intermediate product in deionized water, and carrying out purification, separation and vacuum drying to obtain the needed MXene material.

S51: and adding dilute hydrochloric acid, redissolving the second intermediate product, and carrying out first washing, wherein the washing speed is 3500r/min and the washing time is 5 min.

S52: and (4) taking the precipitate obtained in the first round of washing, and carrying out second round of washing by using deionized water, wherein the washing rotating speed is 3500r/min, and the time is 5 min.

S53: and (4) adding deionized water into the second round of washed precipitate, performing ultrasonic treatment for 45 minutes, and performing centrifugal operation at the rotating speed of 3000r/min for 15 minutes. The upper layer liquid is collected and dried in vacuum to obtain MXene material.

Example B:

in this embodiment, the MAX phase material is Ti₂MgC₁NaCl provides F surface active groups for the prepared Mxene material, and MXene prepared finally is Ti₃C₂Cl₂.

S1: mixing Ti₃MgC₂Putting the material into ethanol, and performing ultrasonic dispersion for 40 minutes to obtain dispersion liquid;

s2: placing the dispersion liquid in an ice-water bath, and adding NaCl into the dispersion liquid for a small number of times while stirring, wherein the stirring speed is 600 r/min;

s3: placing the mixed solution in a vacuum drying oven for vacuum drying at 75 ℃, and completely drying to obtain a first intermediate product;

s4: putting the first intermediate product into a reaction cavity, introducing inert gas to remove air in the cavity, closing an exhaust pipe, continuously introducing the inert gas to enable the air pressure in the reaction cavity to reach 7GPa, setting the discharge voltage to be 200V, using the capacitor with the size of 100mF, and performing discharge machining to obtain a second intermediate product;

s5: and dispersing the second intermediate product in deionized water, and carrying out purification, separation and vacuum drying to obtain the needed MXene material.

S51: and adding dilute hydrochloric acid, redissolving the second intermediate product, and carrying out first washing, wherein the washing speed is 3000r/min, and the washing time is 5 min.

S52: and (4) taking the precipitate obtained in the first round of washing, and carrying out second round of washing by using deionized water, wherein the washing rotating speed is 3000r/min, and the washing time is 5 min.

S53: and (4) adding deionized water into the second round of washed precipitate, performing ultrasonic treatment for 30 minutes, and then performing centrifugal operation at the rotating speed of 3000r/min for 15 minutes. The upper layer liquid is collected and dried in vacuum to obtain MXene material.

Example C:

in this embodiment, the MAX phase material is Sc₃BaN₂，Li₂O is soThe prepared Mxene material provides F surface active groups, and the MXene prepared finally is Sc₃N₂O₂.

S1: subjecting Sc to₃BaN₂Putting the material into ethanol, and performing ultrasonic dispersion for 90 minutes to obtain a dispersion liquid;

s2: placing the dispersion liquid in an ice-water bath, and adding NaCl into the dispersion liquid for a small number of times while stirring, wherein the stirring speed is 500 r/min;

s3: placing the mixed solution in a vacuum drying oven for vacuum drying at the drying temperature of 80 ℃, and completely drying to obtain a first intermediate product;

s4: putting the first intermediate product into a reaction cavity, introducing inert gas to remove air in the cavity, closing an exhaust pipe, continuously introducing the inert gas to enable the air pressure in the reaction cavity to reach 8GPa, setting the discharge voltage to be 250V, using the capacitor with the size of 120mF, and performing discharge machining to obtain a second intermediate product;

s5: and dispersing the second intermediate product in deionized water, and carrying out purification, separation and vacuum drying to obtain the needed MXene material.

S51: and adding dilute hydrochloric acid, redissolving the second intermediate product, and carrying out first washing, wherein the washing speed is 4000r/min and the washing time is 6 min.

S52: and (4) taking the precipitate obtained in the first round of washing, and carrying out second round of washing by using deionized water, wherein the washing rotating speed is 4000r/min, and the washing time is 6 min.

S53: and (4) adding deionized water into the sediment washed in the second round, performing ultrasonic treatment for 25 minutes, and then performing centrifugal operation at the rotating speed of 3000r/min for 15 minutes. The upper layer liquid is collected and dried in vacuum to obtain MXene material.

The technical principle of the present solution is described above with reference to specific embodiments. These descriptions are only used to explain the principles of the present solution and should not be interpreted in any way as limiting the scope of the present solution. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present solution without any inventive effort, which would fall within the scope of the present solution.