阅读说明：本技术 一种磁电复合材料传感器的测试方法及系统 (Test method and system for magnetoelectric composite material sensor ) 是由 庞翠娟 李一波 张晓燕 李宗津 边金 裴华富 张津瑞 于 2021-10-26 设计创作，主要内容包括：本发明提供了一种磁电复合材料传感器的测试方法及系统,设置初始状态直流磁场并记录磁电复合材料在初始状态直流磁场下的初始状态感应电压,进而设置第一组磁场增量值并记录磁电复合材料在初始状态直流磁场下加上第一组磁场增量值后对应的不同感应电压,将记录到的不同磁场下对应的不同感应电压作为第一组增量感应电压值,通过第一组磁场增量值和第一组增量感应电压值计算感应电压对应直流磁场的变化度,以磁场变化步长改变初始状态直流磁场,由此获取感应电压达到最高值时的直流磁场值,实现了根据较小的步长磁场变化控制电压变化达到磁电复合材料的电压最高值的优化效果。(The invention provides a test method and a test system for a magnetoelectric composite material sensor, which set a direct current magnetic field in an initial state and record the initial state induced voltage of the magnetoelectric composite material in the direct current magnetic field in the initial state, setting a first group of magnetic field increment values, recording corresponding different induced voltages of the magnetoelectric composite material under the condition of adding the first group of magnetic field increment values under the DC magnetic field in the initial state, taking the recorded corresponding different induced voltages under different magnetic fields as a first group of increment induced voltage values, calculating the variation degree of the induced voltage corresponding to the DC magnetic field by the first set of magnetic field increment values and the first set of increment induced voltage values, changing the DC magnetic field in the initial state by the magnetic field variation step length, therefore, the direct-current magnetic field value when the induction voltage reaches the maximum value is obtained, and the optimization effect that the voltage change is controlled to reach the maximum voltage value of the magnetoelectric composite material according to the small step magnetic field change is achieved.)

1. A test method of a magnetoelectric composite material sensor is characterized by comprising the following steps:

s100, setting a direct current magnetic field in an initial state, and recording an initial state induced voltage of the magnetoelectric composite material in the direct current magnetic field in the initial state;

s200, setting a first group of magnetic field increment values, recording corresponding different induced voltages of the magnetoelectric composite material under an initial state direct-current magnetic field and after the first group of magnetic field increment values are added, and taking the recorded corresponding different induced voltages under different magnetic fields as a first group of increment induced voltage values;

s300, calculating the change degree of the induced voltage corresponding to the direct-current magnetic field according to the first group of magnetic field increment values, the initial state induced voltage and the first group of increment induced voltage values;

s400, setting a magnetic field change step according to the change degree, changing the direct-current magnetic field in the initial state according to the magnetic field change step, and recording the induced voltage of the magnetoelectric composite material under the changed magnetic field;

and S500, calculating and obtaining the direct current magnetic field value when the induction voltage reaches the highest value.

2. The method for testing the magnetoelectric composite material sensor according to claim 1, wherein in S100, an initial state direct current magnetic field is set, and the method for recording the initial state induced voltage of the magnetoelectric composite material under the initial state direct current magnetic field comprises the following steps: setting an initial state DC magnetic field through a DC magnetic field generator, recording the lowest magnetic field intensity output of the DC magnetic field generator as H0 and the highest magnetic field intensity output of the DC magnetic field generator as H2, recording the arithmetic mean of H0 and H2 as H1, wherein the initial state DC magnetic field is an array consisting of a plurality of different magnetic field intensity values, each different magnetic field intensity value in the initial state DC magnetic field is obtained by extracting from an interval [ H0, H1) through a random function, the unit of the magnetic field intensity value is Tesla, a variable n represents the number of the magnetic field intensity values in the initial state DC magnetic field, a variable i represents the serial number of the ith magnetic field intensity value in the initial state DC magnetic field, i belongs to [1, n ], the initial state DC magnetic field is an array H _ alp, and H _ alp (i) represents the element with the serial number i in the array H _ alp, h _ alp = [ H _ alp (1), …, H _ alp (i), …, H _ alp (n) ];

recording initial state induction voltage of a magnetoelectric composite material under an initial state direct-current magnetic field, wherein the magnetoelectric composite material is a cement-based composite material, the magnetoelectric composite material is provided with a voltage sensor, the initial state induction voltage is an array formed by n voltage values acquired by the magnetoelectric composite material through the voltage sensor under n magnetic field strength values in the initial state direct-current magnetic field H _ alp, the unit of the voltage value is volt, the initial state induction voltage is expressed as an array U _ alp, U _ alp (i) represents an element with the sequence number of i in the array U _ alp, and U _ alp = [ U _ alp (1), …, U _ alp (i), … and U _ alp (n) ].

3. The method for testing the magnetoelectric composite material sensor according to claim 2, wherein in S200, a first set of magnetic field increment values is set, different induced voltages corresponding to the magnetoelectric composite material after the first set of magnetic field increment values are added under an initial state direct current magnetic field are recorded, and the method for taking the recorded different induced voltages corresponding to the different magnetic fields as the first set of increment induced voltage values comprises the following steps: setting a first group of magnetic field increment values, wherein the first group of magnetic field increment values are an array consisting of increment values of n magnetic field strengths, the first group of magnetic field increment values are recorded as an array h _1, n random numerical values are extracted from an interval (0,1) from zero tesla without magnetic field strength to one tesla with unit magnetic field strength through a random function to represent the n magnetic field increment values, and an element with the sequence number i in the array h _1 is recorded as h _1(i), h _1= [ h _1(1), …, h _1(i), …, h _1(n) ], and 0< h _1(i) <1;

respectively adding elements corresponding to the same number in a first group of magnetic field increment values H _1 to each element in an initial state direct current magnetic field H _ alp to obtain a group of magnetic field values H _1, recording H _1= [ H _ alp (1) + H _1(1), …, H _ alp (i) + H _1(i), …, H _ alp (n) + H _1(n) ], recording the element with the number i in the H _1 as H _1(i), recording H _1= [ H _1(1), (…), H _1(i), … and H _1(n) ], respectively setting the direct current magnetic field generator to each magnetic field value H _1(i) in the H _1 in a dividing manner, and respectively recording voltage values under the magnetic field value H _1(i) with the number i in the H _1 through a voltage sensor as an array of U _1(i), and recording numerical values of each U _1(i) as an array, u _1(i) represents an element with the sequence number i in U _1, and U _1 is the first group of incremental induced voltage values.

4. The method for testing the magnetoelectric composite material sensor according to claim 3, wherein in S300, the method for calculating the degree of change of the induced voltage corresponding to the dc magnetic field through the first set of magnetic field increment values, the initial state induced voltage and the first set of increment induced voltage values comprises: defining the degree of change to represent the degree of change of the induced voltage corresponding to the direct-current magnetic field, which is calculated according to an array consisting of increment values of a plurality of magnetic field strengths and an array consisting of a plurality of voltage increment values;

defining a first group of voltage increment values as an array U _1, calculating a formula of the first group of voltage increment values U _1 according to the array U _ alp and the array U _1 to obtain U _1= [ U _1-U _ alp ], and recording an element with a sequence number of i in the U _1 as U _1(i), wherein U _1(i) = U _1(i) -U _ alp (i);

the function Udp () is a function for calculating the degree of change from an array consisting of a plurality of increment values of the magnetic field strength and an array consisting of a plurality of voltage increment values, Udp (h _1, u _1) is the degree of change calculated from h _1 and u _1, and the formula for calculating the function Udp () from h _1 and u _1 is as follows:

the obtained Udp (h _1, u _1) is the variation of h _1 and u _ 1.

5. The method for testing the magnetoelectric composite material sensor according to claim 4, wherein in S400, a magnetic field change step length is set according to the degree of change, the initial state direct current magnetic field is changed by the magnetic field change step length, and the method for recording the induced voltage of the magnetoelectric composite material under the changed magnetic field comprises the following steps: the specific method for setting the dc magnetic field change step size according to the degree of change is to record the degree of change Udp (h _1, u _1) calculated according to the first set of voltage increment value u _1 and the first set of magnetic field increment value h _1 as a first degree of change and also as Udp (1), record an array obtained by multiplying each element in the first set of magnetic field increment value h _1 array by Udp (h _1, u _1) as an hs _1 array, represent the element with the sequence number i in the hs _1 array with hs _1(i) = h _1(i) × Udp (1), and record the hs _1 array, that is, the magnetic field change step size as the 1 st step size, thereby change the initial state dc magnetic field with the magnetic field change step size and record the induced voltage of the magnetoelectric composite material under the changed magnetic field, specifically includes the following steps:

s401, starting a program; acquiring an H _1 array; acquiring an hs _1 array; acquiring a U _1 array; go to S402;

s402, setting a variable j; let the value of variable j be 1; turning to S4031;

s4031, setting an empty set hslist; the elements in the hslist set have an ordering from first to last in order of the time of addition to the set; turning to S4032;

s4032, setting a null array Hv; setting an empty array hsv; setting a null array Uv; setting a null array Uw; go to S4041;

s4041, adding elements in the H _1 array into the array Hv; adding elements in the hs _1 array to the array hsv; adding elements in the U _1 array into the array Uv; go to S4042;

s4042, adding an element with the sequence number i in the Hv array and an element with the sequence number i in the hsv array to obtain an element with the sequence number i in the Hw array, and recording the element with the sequence number i in the Hw array as Hw (i), recording the element with the sequence number i in the Hv array as Hv (i), and recording the element with the sequence number i in the hsv array as Hw (i) = Hv (i) + hsv (i), and adding the numerical values of Hw (i) into the Hw array according to the sequence number i; go to S405;

s405, respectively setting the magnetic field intensity of the direct-current magnetic field generator according to the numerical value of each element in the Hw array, recording the voltage value under the magnetic field value Hw (i) with the sequence number i in the Hw through a voltage sensor as Uw (i), wherein the Uw (i) represents the element with the sequence number i in the Uw, and adding each numerical value Uw (i) into the Uw array according to the sequence number i; go to S406;

s406, acquiring an hsv array; acquiring a Uv array; acquiring a Uw array; go to S407;

s407, calculating an array of increment values from the array Uv to the array Uw according to the array Uv and the array Uw as an array U (v-w), obtaining a formula of the array U (v-w) as U (v-w) = [ Uw-Uv ], Uw (i) representing an element with a sequence number of i in the array Uw, Uv (i) representing an element with a sequence number of i in the array Uv, Uw (i) -Uv (i) representing a numerical value obtained by subtracting the element with a sequence number of i in the array Uv from the element with a sequence number of i in the array Uw, wherein the element with a sequence number of i in the array U (v-w) is U (v-w) (i), and U (v-w) (i) = Uw (i) -Uv (i); go to S408;

s408, calculating the degree of change of the hsv and the U (v-w) into Udp (hsv, U (v-w)) through a function Udp () according to the array hsv and the array U (v-w), wherein the formula for calculating the Udp (hsv, U (v-w)) is as follows:

the obtained Udp (hsv, U (v-w)) is the degree of change of hsv and U (v-w); go to S409;

s409, marking an array obtained by multiplying each element in the hsv array by Udp (hsv, U (v-w)) as an hs _2 array, hs _2= [ hsv = Udp (1) ], and hs _2(i) represents an element with a sequence number of i in the hs _2 array, that is, hs _2= [ hs _2(i) ], hs _2(i) = hsv (i) = Udp (hsv, U (v-w)); go to S410;

s410, calculating a threshold lambda according to the U (v-w) array and the hs _2 array, wherein the calculation formula of the threshold lambda is as follows:

the calculated lambda is the required threshold, whether the constraint condition lambda is more than 0 is judged, if yes, S4101 is carried out, and if not, S4102 is carried out;

s4101, calculating to obtain the arithmetic mean U of each element in an array U (v-w); calculating to obtain the arithmetic mean of each element in the array hs _2 as h; combining the value of j and the value of u into a key-value pair, taking the value of j as the key of the key-value pair, and taking an array consisting of the value of u and the value of h as [ u, h ] as the value of the key-value pair, wherein u is taken as a first value of the key-value pair, h is taken as a second value of the key-value pair, and the key-value pair is taken as < j, [ u, h ] >; adding the key-value pair < j, [ u, h ] > to the set hslist; turning to S4102;

s4102, if the hslist is an empty set, turning to S4103, and if the hslist is not an empty set, recording a set formed by second values of all key value pairs in the set hslist as a set hset; judging whether the arithmetic mean value of the numerical values of each element in the set hset is larger than or equal to the numerical value of the highest magnetic field intensity output h2 of the direct-current magnetic field generator, if so, turning to S4104, otherwise, turning to S4103;

s4103, increasing the value of j by 1; emptying elements in the hsv array, and adding the elements in the hs _2 array into the hsv array; emptying elements in the Uv array, adding the elements in the Uw array into the Uv array, and emptying the elements in the Uw array; emptying elements in the Hv array, adding the elements in the Hw array into the Hv array, and emptying the elements in the Hw array; go to S4042;

s4104, outputting a set hslist; ending the program;

in the output set hslist, in each element of hslist, the first value of each element is the voltage recorded after the magnetic field is changed, and the second value of each element is the magnetic field intensity changed corresponding to the first value of the element.

6. The method for testing the magnetoelectric composite material sensor according to claim 5, wherein in S500, the method for calculating and obtaining the value of the DC magnetic field when the induced voltage reaches the maximum value comprises the following steps: in the set hslist, calculating the key value pair with the maximum value of the first value of the values of the key value pairs in the selected set hslist, recording the key value pair as a target key value pair < j ', [ u', h '], further obtaining a second value h' in the values [ u 'and h' of the target key value pair, setting the magnetic field intensity of the direct-current magnetic field generator to h 'and outputting a direct-current magnetic field with the magnetic field intensity value of h' to the magnetoelectric composite material.

7. A test system of a magnetoelectric composite material sensor is characterized by comprising the following components: a processor, a memory, and a computer program stored in the memory and executable on the processor, the processor implementing the steps in the method of testing a magnetoelectric composite sensor according to any one of claims 1 to 6 when executing the computer program.

Technical Field

The invention belongs to the field of sensors, and particularly relates to a method and a system for testing a magnetoelectric composite sensor.

Background

The cement-based magnetoelectric composite material has excellent applicability and coupling property with a concrete structure, has the durability consistent with that of concrete, integrates sensing, driving and controlling multiple functions into a whole by utilizing high-efficiency magnetic, force and electric multiple responses and excellent sensing performance and sensitivity, and has an important effect in the field of monitoring of infrastructure engineering.

The response relation of the piezoelectric or magnetostrictive property to the mechanical property of the material is linear, and the linear corresponding relation of the magnetoelectric coupling response to the excitation signal can be deduced. Firstly, according to the change rule and characteristics of the piezoelectric and magnetostrictive properties obtained from the previous research content, the corresponding relation between input and response is established. According to the field intensity input of an applied magnetic field and corresponding to the measured induced voltage, a magnetoelectric coupling response standardized straight line of the magnetoelectric composite material is calibrated, the slope of the fitted straight line is used as a sensitivity evaluation index of sensing performance, and the stress or strain applied to the structure can be calculated by combining the linear response relation of magnetostriction and piezoelectric performance.

A method for preparing a magnetoelectric composite material by multi-field coupling provided in patent document No. CN103066201B cannot effectively measure the electromagnetic induction change of the magnetoelectric composite material although a bonded magnet with a preferred orientation can be prepared to improve its magnetoelectric performance. Under the resonance frequency, the coupling response of the magnetoelectric composite material can be suddenly enhanced by several times to tens of times, and the magnetostrictive strain can reach the highest value under the excitation of the direct-current bias magnetic field intensity of the saturated magnetoelectric response.

Disclosure of Invention

The present invention is directed to a method and system for testing a magnetoelectric composite sensor, which solves one or more of the problems of the prior art and provides at least one of the advantages of the present invention.

The magnetoelectric composite material can change along with the change of the magnetic field intensity under the direct current magnetic field, but how to gradually adjust the magnetic field intensity to change the voltage of the magnetoelectric composite material is a complicated technical problem, the direct current magnetic field in the initial state is set, the magnetic field change step length is set according to the change degree, the direct current magnetic field in the initial state is changed by the magnetic field change step length, and the direct current magnetic field value when the induction voltage reaches the highest value needs to be obtained.

The invention provides a test method and a test system for a magnetoelectric composite material sensor, which are characterized by setting a direct current magnetic field in an initial state, recording the initial state induced voltage of the magnetoelectric composite material under the direct current magnetic field in the initial state, further setting a first group of magnetic field increment values, recording the corresponding different induced voltages of the magnetoelectric composite material under the direct current magnetic field in the initial state after adding the first group of magnetic field increment values, taking the corresponding different induced voltages under the different recorded magnetic fields as the first group of increment induced voltage values, calculating the change degree of the direct current magnetic field corresponding to the induced voltages through the first group of magnetic field increment values and the first group of increment induced voltage values, changing the direct current magnetic field in the initial state by the magnetic field change step length, and obtaining the direct current magnetic field value when the induced voltage reaches the highest value.

In order to achieve the above object, according to an aspect of the present invention, there is provided a method for testing a magnetoelectric composite sensor, the method including the steps of:

s100, setting a direct current magnetic field in an initial state, and recording an initial state induced voltage of the magnetoelectric composite material in the direct current magnetic field in the initial state;

s200, setting a first group of magnetic field increment values, recording corresponding different induced voltages of the magnetoelectric composite material under an initial state direct-current magnetic field and after the first group of magnetic field increment values are added, and taking the recorded corresponding different induced voltages under different magnetic fields as a first group of increment induced voltage values;

s300, calculating the change degree of the induced voltage corresponding to the direct-current magnetic field according to the first group of magnetic field increment values, the initial state induced voltage and the first group of increment induced voltage values;

s400, setting a magnetic field change step according to the change degree, changing the direct-current magnetic field in the initial state according to the magnetic field change step, and recording the induced voltage of the magnetoelectric composite material under the changed magnetic field;

and S500, calculating and obtaining the direct current magnetic field value when the induction voltage reaches the highest value.

Further, in S100, an initial state direct current magnetic field is set, and a method of recording an initial state induced voltage of the magnetoelectric composite material in the initial state direct current magnetic field is as follows: setting an initial state direct current magnetic field through a direct current magnetic field generator, recording the lowest magnetic field intensity output of the direct current magnetic field generator as h0 and the highest magnetic field intensity output of the direct current magnetic field generator as h2, recording the arithmetic mean of h0 and h2 as h1, wherein the initial state direct current magnetic field is an array consisting of a plurality of different magnetic field intensity values, each different magnetic field intensity value in the initial state direct current magnetic field is obtained by extracting from an interval [ h0, h1) through a random function, the unit of the magnetic field intensity value is T Tesla, a variable n represents the number of the magnetic field intensity values in the initial state direct current magnetic field, a variable i represents the serial number of the ith magnetic field intensity value in the initial state direct current magnetic field, i belongs to [1, n ], the lengths of the arrays related in the invention are n, and the arrays related in the invention are ordered arrays, carrying out non-dimensionalization processing in the calculation of the physical quantity and the numerical value thereof, wherein the DC magnetic field in the initial state is an array H _ alp, and H _ alp (i) represents an element with the sequence number of i in the array H _ alp, and H _ alp = [ H _ alp (i) ], H _ alp = [ H _ alp (1), …, H _ alp (i), … and H _ alp (n) ];

recording initial state induction voltage of a magnetoelectric composite material under an initial state direct-current magnetic field, wherein the magnetoelectric composite material is a cement-based composite material, the magnetoelectric composite material is provided with a voltage sensor, the initial state induction voltage is an array formed by n voltage values acquired by the magnetoelectric composite material through the voltage sensor under n magnetic field strength values in an initial state direct-current magnetic field H _ alp, the unit of the voltage value is V volt, the initial state induction voltage is recorded as an array U _ alp, the U _ alp (i) represents an element with the sequence number of i in the array U _ alp, and the element has U _ alp = [ U _ alp (i) ], U _ alp = [ U _ alp (1), …, U _ alp (i), … and U _ alp (n) ].

Further, in S200, a first set of magnetic field increment values is set, different induced voltages corresponding to the magnetoelectric composite material after the first set of magnetic field increment values is added under the dc magnetic field in the initial state are recorded, and the method for taking the recorded different induced voltages corresponding to the different magnetic fields as the first set of increment induced voltage values includes: setting a first set of magnetic field increment values, wherein the first set of magnetic field increment values are an array consisting of increment values of n magnetic field strengths, the first set of magnetic field increment values are recorded as an array h _1, n random numerical values are extracted from an interval (0,1) from zero tesla without magnetic field strength to one tesla with unit magnetic field strength through a random function to represent the n magnetic field increment values, and an element with the sequence number i in the array h _1 is recorded as h _1(i), h _1= [ h _1(i) ], h _1= [ h _1(1) (,) …, h _1(i), …, h _1(n) ], and 0< h _1(i) <1;

the method comprises the steps of adding elements corresponding to the same number in a first set of magnetic field increment values H _1 to each element in an initial state direct current magnetic field H _ alp to obtain a set of magnetic field values H _1, recording H _1= [ H _ alp (i) + H _1(i) ], recording H _1= [ H _ alp (1) + H _1(1) ], …, H _ alp (i) + H _1(i), …, H _ alp (n) + H _1(n) ], recording an element with the number i in the H _1 as H _1(i), recording H _1= [ H _1(i) ], recording H _1= [ H _1(1) (1), …, H _1(i), … and H _1(n) ], recording the direct current magnetic field generators as the values H _1(i) in the H _1 in different times, and recording the magnetic field values with the voltage value U _1(i) in the H _1 through a voltage sensor as the number I (1) respectively, an array formed by the values of U _1(i) is denoted as an array U _1, U _1(i) represents an element with a serial number i in U _1, U _1= [ U _1(i) ], and U _1 is a first set of incremental induced voltage values.

Further, in S300, the method for calculating the degree of change of the induced voltage corresponding to the dc magnetic field according to the first set of magnetic field increment values, the initial state induced voltage, and the first set of increment induced voltage values includes: defining the degree of change to represent the degree of change of the induced voltage corresponding to the direct-current magnetic field, which is calculated according to an array consisting of increment values of a plurality of magnetic field strengths and an array consisting of a plurality of voltage increment values;

defining a first group of voltage increment values as an array U _1, calculating a formula of the first group of voltage increment values U _1 according to the array U _ alp and the array U _1 to obtain U _1, wherein the formula is U _1= [ U _1-U _ alp ], and the element with the sequence number of i in U _1 is U _1(i), U _1(i) = U _1(i) -U _ alp (i), and U _1= [ U _1(i) ];

the function Udp () is a function for calculating the degree of change from an array consisting of a plurality of increment values of the magnetic field strength and an array consisting of a plurality of voltage increment values, Udp (h _1, u _1) is the degree of change calculated from h _1 and u _1, and the formula for calculating the function Udp () from h _1 and u _1 is as follows:

the obtained Udp (h _1, u _1) is the variation of h _1 and u _ 1.

Further, in S400, a magnetic field change step is set according to the change degree, the initial state direct-current magnetic field is changed by the magnetic field change step, and the method of recording the induced voltage of the magnetoelectric composite material under the changed magnetic field is as follows: the specific method for setting the dc magnetic field change step length according to the degree of change is to record the degree of change Udp (h _1, u _1) calculated from the first set of voltage increment value u _1 and the first set of magnetic field increment value h _1 as a first degree of change and also as Udp (1), record an array obtained by multiplying each element in the first set of magnetic field increment value h _1 array by Udp (h _1, u _1) as hs _1 array, hs _1= [ h _1= [ Udp (1) ], denote the element with the sequence number i in the hs _1 array with hs _1(i), namely hs _1= [ hs _1(i) ], hs _1(i) = h _1(i) × Udp (1), the obtained hs _1 array indicates the magnetic field change step size and is recorded as the 1 st step size, therefore, the direct-current magnetic field in the initial state is changed by the magnetic field change step length, and the specific steps of recording the induced voltage of the magnetoelectric composite material under the changed magnetic field are as follows:

s401, starting a program; acquiring an H _1 array; acquiring an hs _1 array; acquiring a U _1 array; go to S402;

s402, setting a variable j; let the value of variable j be 1; turning to S4031;

s4031, setting an empty set hslist; the elements in the hslist set have an ordering from first to last in order of the time of addition to the set; turning to S4032;

s4032, setting a null array Hv; setting an empty array hsv; setting a null array Uv; setting a null array Uw; go to S4041;

s4041, adding elements in the H _1 array into the array Hv; adding elements in the hs _1 array to the array hsv; adding elements in the U _1 array into the array Uv; go to S4042;

s4042, adding an element with a sequence number i in the Hv array to an element with a sequence number i in the hsv array to obtain an element with a sequence number i in the Hw array, denoted as Hw (i), denoted as i in the Hw array, denoted as i in the Hv array, and denoted as i in the hvv array, and hsv (i), denoted as i in the hsv array, i.e., Hw = [ Hw (i) ], Hw = [ Hv + hsv ], Hw (i) = Hv (i) + hsv (i), and adding the values of Hw (i) to the Hw array according to the sequence number i; go to S405;

s405, respectively setting the magnetic field intensity of the direct-current magnetic field generator according to the numerical value of each element in the Hw array, recording the voltage value under the magnetic field value Hw (i) with the serial number i in the Hw through a voltage sensor as Uw (i), wherein Uw (i) represents the element with the serial number i in the Uw, and adding each Uw (i) numerical value into the Uw array according to the serial number i; go to S406;

s406, acquiring an hsv array; acquiring a Uv array; acquiring a Uw array; go to S407;

s407, calculating an array of increment values from the array Uv to the array Uw according to the array Uv and the array Uw as an array U (v-w), wherein a formula of the array U (v-w) is U (v-w) = [ Uw-Uv ], Uw (i) represents an element with a sequence number of i in the array Uw, Uv (i) represents an element with a sequence number of i in the array Uv, Uw (i) -Uv (i) represents a numerical value obtained by subtracting the element with the sequence number of i in the array Uv from the element with the sequence number of i in the array Uw, and the element with the sequence number of i in the array U (v-w) is U (v-w) (i), U (v-w) (i) = Uw (i) -Uv (i), and U (v-w) = [ U (v-w) (i) ]; go to S408;

s408, calculating the degree of change of the hsv and the U (v-w) into Udp (hsv, U (v-w)) through a function Udp () according to the array hsv and the array U (v-w), wherein the formula for calculating the Udp (hsv, U (v-w)) is as follows:

the obtained Udp (hsv, U (v-w)) is the degree of change of hsv and U (v-w); go to S409;

s409, marking an array obtained by multiplying each element in the hsv array by Udp (hsv, U (v-w)) as an hs _2 array, hs _2= [ hsv = Udp (1) ], and hs _2(i) represents an element with a sequence number of i in the hs _2 array, that is, hs _2= [ hs _2(i) ], hs _2(i) = hsv (i) = Udp (hsv, U (v-w)); go to S410;

s410, calculating a threshold lambda according to the U (v-w) array and the hs _2 array, wherein the calculation formula of the threshold lambda is as follows:

the calculated lambda is the required threshold, whether the constraint condition lambda is more than 0 is judged, if yes, S4101 is carried out, and if not, S4102 is carried out;

s4101, calculating to obtain the arithmetic mean U of each element in an array U (v-w); calculating to obtain the arithmetic mean of each element in the array hs _2 as h; combining the value of j and the value of u into a key-value pair, taking the value of j as the key of the key-value pair, and taking an array consisting of the value of u and the value of h as [ u, h ] as the value of the key-value pair, wherein u is taken as a first value of the key-value pair, h is taken as a second value of the key-value pair, and the key-value pair is taken as < j, [ u, h ] >; adding the key-value pair < j, [ u, h ] > to the set hslist; turning to S4102;

s4102, if the hslist is an empty set, turning to S4103, and if the hslist is not an empty set, recording a set formed by second values of all key value pairs in the set hslist as a set hset; judging whether the arithmetic mean value of the numerical values of each element in the set hset is larger than or equal to the numerical value of the highest magnetic field intensity output h2 of the direct-current magnetic field generator, if so, turning to S4104, otherwise, turning to S4103;

s4103, increasing the value of j by 1; emptying elements in the hsv array, and adding the elements in the hs _2 array into the hsv array; emptying elements in the Uv array, adding the elements in the Uw array into the Uv array, and emptying the elements in the Uw array; emptying elements in the Hv array, adding the elements in the Hw array into the Hv array, and emptying the elements in the Hw array; go to S4042;

s4104, outputting a set hslist; ending the program;

in the output set hslist, in each element of hslist, the first value of each element is the voltage recorded after the magnetic field is changed, and the second value of each element is the magnetic field intensity changed corresponding to the first value of the element.

Further, in S500, the method for calculating and obtaining the dc magnetic field value when the induced voltage reaches the maximum value includes: in the set hslist, calculating the key value pair with the maximum value of the first value of the values of the key value pairs in the selected set hslist, recording the key value pair as a target key value pair < j ', [ u', h '], further obtaining a second value h' in the values [ u 'and h' of the target key value pair, setting the magnetic field intensity of the direct-current magnetic field generator to h 'and outputting a direct-current magnetic field with the magnetic field intensity value of h' to the magnetoelectric composite material.

The invention also provides a test system of the magnetoelectric composite material sensor, which comprises the following components: the test system of the magnetoelectric composite material sensor can be operated in computing equipment such as a desktop computer, a notebook computer, a palm computer, a cloud data center and the like, the operable system can include, but is not limited to, a processor, a memory and a server cluster, and the processor executes the computer program to operate in the following units of the system:

the initial state setting unit is used for setting an initial state direct-current magnetic field and recording initial state induction voltage of the magnetoelectric composite material under the initial state direct-current magnetic field;

the magnetic field increment unit is used for setting a first group of magnetic field increment values, recording corresponding different induced voltages of the magnetoelectric composite material under an initial state direct-current magnetic field and after the first group of magnetic field increment values are added, and taking the recorded corresponding different induced voltages under different magnetic fields as a first group of increment induced voltage values;

the induced voltage calculation unit is used for calculating the change degree of the induced voltage corresponding to the direct-current magnetic field through the first group of magnetic field increment values and the first group of increment induced voltage values;

a magnetic field step length changing unit for setting a magnetic field change step length according to the degree of change and changing the DC magnetic field in the initial state by the magnetic field change step length;

and the induction voltage acquisition unit is used for calculating and acquiring the direct-current magnetic field value when the induction voltage reaches the highest value.

The invention has the beneficial effects that: the invention provides a method and a system for testing a magnetoelectric composite material sensor.

Drawings

The above and other features of the present invention will become more apparent by describing in detail embodiments thereof with reference to the attached drawings in which like reference numerals designate the same or similar elements, it being apparent that the drawings in the following description are merely exemplary of the present invention and other drawings can be obtained by those skilled in the art without inventive effort, wherein:

FIG. 1 is a flow chart of a method for testing a magnetoelectric composite sensor;

fig. 2 is a system block diagram of a test system for a magnetoelectric composite sensor.

Detailed Description

The conception, the specific structure and the technical effects of the present invention will be clearly and completely described in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the schemes and the effects of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.

In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.

Fig. 1 is a flow chart of a method for testing a magnetoelectric composite sensor according to the present invention, and a method and a system for testing a magnetoelectric composite sensor according to an embodiment of the present invention are described below with reference to fig. 1.

The invention provides a test method of a magnetoelectric composite material sensor, which specifically comprises the following steps:

s100, setting a direct current magnetic field in an initial state, and recording an initial state induced voltage of the magnetoelectric composite material in the direct current magnetic field in the initial state;

s200, setting a first group of magnetic field increment values, recording corresponding different induced voltages of the magnetoelectric composite material under an initial state direct-current magnetic field and after the first group of magnetic field increment values are added, and taking the recorded corresponding different induced voltages under different magnetic fields as a first group of increment induced voltage values;

s300, calculating the change degree of the induced voltage corresponding to the direct-current magnetic field according to the first group of magnetic field increment values, the initial state induced voltage and the first group of increment induced voltage values;

s400, setting a magnetic field change step according to the change degree, changing the direct-current magnetic field in the initial state according to the magnetic field change step, and recording the induced voltage of the magnetoelectric composite material under the changed magnetic field;

and S500, calculating and obtaining the direct current magnetic field value when the induction voltage reaches the highest value.

Further, in S100, an initial state direct current magnetic field is set, and a method of recording an initial state induced voltage of the magnetoelectric composite material in the initial state direct current magnetic field is as follows: setting an initial state direct current magnetic field through a direct current magnetic field generator, recording the lowest magnetic field intensity output of the direct current magnetic field generator as h0 and the highest magnetic field intensity output of the direct current magnetic field generator as h2, recording the arithmetic mean of h0 and h2 as h1, wherein the initial state direct current magnetic field is an array consisting of a plurality of different magnetic field intensity values, each different magnetic field intensity value in the initial state direct current magnetic field is obtained by extracting from an interval [ h0, h1) through a random function, the unit of the magnetic field intensity value is T Tesla, a variable n represents the number of the magnetic field intensity values in the initial state direct current magnetic field, a variable i represents the serial number of the ith magnetic field intensity value in the initial state direct current magnetic field, i belongs to [1, n ], the lengths of the arrays related in the invention are n, and the arrays related in the invention are ordered arrays, the direct current magnetic field in the initial state is recorded as an array H _ alp, H _ alp (i) represents an element with the sequence number of i in the array H _ alp, and H _ alp = [ H _ alp (i) ], H _ alp = [ H _ alp (1), …, H _ alp (i), … and H _ alp (n) ];

recording initial state induction voltage of a magnetoelectric composite material under an initial state direct-current magnetic field, wherein the magnetoelectric composite material is a cement-based composite material, the magnetoelectric composite material is provided with a voltage sensor, the initial state induction voltage is an array formed by n voltage values acquired by the magnetoelectric composite material through the voltage sensor under n magnetic field strength values in an initial state direct-current magnetic field H _ alp, the unit of the voltage value is V volt, the initial state induction voltage is recorded as an array U _ alp, the U _ alp (i) represents an element with the sequence number of i in the array U _ alp, and the element has U _ alp = [ U _ alp (i) ], U _ alp = [ U _ alp (1), …, U _ alp (i), … and U _ alp (n) ].

Further, in S200, a first set of magnetic field increment values is set, different induced voltages corresponding to the magnetoelectric composite material after the first set of magnetic field increment values is added under the dc magnetic field in the initial state are recorded, and the method for taking the recorded different induced voltages corresponding to the different magnetic fields as the first set of increment induced voltage values includes: setting a first set of magnetic field increment values, wherein the first set of magnetic field increment values are an array consisting of increment values of n magnetic field strengths, the first set of magnetic field increment values are recorded as an array h _1, n random numerical values are extracted from an interval (0,1) from zero tesla without magnetic field strength to one tesla with unit magnetic field strength through a random function to represent the n magnetic field increment values, and an element with the sequence number i in the array h _1 is recorded as h _1(i), h _1= [ h _1(i) ], h _1= [ h _1(1) (,) …, h _1(i), …, h _1(n) ], and 0< h _1(i) <1;

the method comprises the steps of adding elements corresponding to the same number in a first set of magnetic field increment values H _1 to each element in an initial state direct current magnetic field H _ alp to obtain a set of magnetic field values H _1, recording H _1= [ H _ alp (i) + H _1(i) ], recording H _1= [ H _ alp (1) + H _1(1) ], …, H _ alp (i) + H _1(i), …, H _ alp (n) + H _1(n) ], recording an element with the number i in the H _1 as H _1(i), recording H _1= [ H _1(i) ], recording H _1= [ H _1(1) (1), …, H _1(i), … and H _1(n) ], recording the direct current magnetic field generators as the values H _1(i) in the H _1 in different times, and recording the magnetic field values with the voltage value U _1(i) in the H _1 through a voltage sensor as the number I (1) respectively, an array formed by the values of U _1(i) is denoted as an array U _1, U _1(i) represents an element with a serial number i in U _1, U _1= [ U _1(i) ], and U _1 is a first set of incremental induced voltage values.

Further, in S300, the method for calculating the degree of change of the induced voltage corresponding to the dc magnetic field according to the first set of magnetic field increment values, the initial state induced voltage, and the first set of increment induced voltage values includes: defining the degree of change to represent the degree of change of the induced voltage corresponding to the direct-current magnetic field, which is calculated according to an array consisting of increment values of a plurality of magnetic field strengths and an array consisting of a plurality of voltage increment values;

defining a first group of voltage increment values as an array U _1, calculating a formula of the first group of voltage increment values U _1 according to the array U _ alp and the array U _1 to be U _1= [ U _1(i) -U _ alp (i) ], wherein an element with a sequence number of i in U _1 is U _1(i), U _1(i) = U _1(i) -U _ alp (i), and U _1= [ U _1(i) ];

the function Udp () is a function for calculating the degree of change from an array consisting of a plurality of increment values of magnetic field strength and an array consisting of a plurality of voltage increment values, and Udp (H _1, U _1) is the degree of change calculated from H _1 and U _1, and the formula for calculating the function Udp () from H _1 and U _1 is as follows:

the obtained Udp (h _1, u _1) is the variation of h _1 and u _ 1.

Further, in S400, a magnetic field change step is set according to the change degree, the initial state direct-current magnetic field is changed by the magnetic field change step, and the method of recording the induced voltage of the magnetoelectric composite material under the changed magnetic field is as follows: the specific method for setting the dc magnetic field change step length according to the degree of change is to record the degree of change Udp (h _1, u _1) calculated from the first set of voltage increment value u _1 and the first set of magnetic field increment value h _1 as a first degree of change and also as Udp (1), record an array obtained by multiplying each element in the first set of magnetic field increment value h _1 array by Udp (h _1, u _1) as hs _1 array, hs _1= [ h _1(i) × Udp (1) ], represent the element with the sequence number i in the hs _1 array by hs _1(i), namely hs _1= [ hs _1(i) ], hs _1(i) = h _1(i) × Udp (1), the obtained hs _1 array indicates the magnetic field change step size and is recorded as the 1 st step size, therefore, the direct-current magnetic field in the initial state is changed by the magnetic field change step length, and the specific steps of recording the induced voltage of the magnetoelectric composite material under the changed magnetic field are as follows:

s401, starting a program; acquiring an H _1 array; acquiring an hs _1 array; acquiring a U _1 array; go to S402;

s402, setting a variable j; let the value of variable j be 1; turning to S4031;

s4031, setting an empty set hslist; the elements in the hslist set have an ordering from first to last in order of the time of addition to the set; turning to S4032;

s4032, setting a null array Hv; setting an empty array hsv; setting a null array Uv; setting a null array Uw; go to S4041;

s4041, adding elements in the H _1 array into the array Hv; adding elements in the hs _1 array to the array hsv; adding elements in the U _1 array into the array Uv; go to S4042;

s4042, adding an element with a sequence number i in the Hv array to an element with a sequence number i in the hsv array to obtain an element with a sequence number i in the Hw array, denoted as Hw (i), denoted as i in the Hw array, denoted as i in the Hv array, and denoted as i in the hvv array, and hsv (i), denoted as i in the hsv array, i.e., Hw = [ Hw (i) ], Hw = [ Hv + hsv ], Hw (i) = Hv (i) + hsv (i), and adding the values of Hw (i) to the Hw array according to the sequence number i; go to S405;

s405, respectively setting the magnetic field intensity of the direct-current magnetic field generator according to the numerical value of each element in the Hw array, recording the voltage value under the magnetic field value Hw (i) with the serial number i in the Hw through a voltage sensor as Uw (i), wherein Uw (i) represents the element with the serial number i in the Uw, and adding each Uw (i) numerical value into the Uw array according to the serial number i; go to S406;

s406, acquiring an hsv array; acquiring a Uv array; acquiring a Uw array; go to S407;

s407, calculating an array of increment values from the array Uv to the array Uw according to the array Uv and the array Uw as an array U (v-w), wherein a formula of the array U (v-w) is U (v-w) = [ Uw-Uv ], Uw (i) represents an element with a sequence number of i in the array Uw, Uv (i) represents an element with a sequence number of i in the array Uv, Uw (i) -Uv (i) represents a numerical value obtained by subtracting the element with the sequence number of i in the array Uv from the element with the sequence number of i in the array Uw, and the element with the sequence number of i in the array U (v-w) is U (v-w) (i), U (v-w) (i) = Uw (i) -Uv (i), and U (v-w) = [ U (v-w) (i) ]; go to S408;

s408, calculating the degree of change of the hsv and the U (v-w) into Udp (hsv, U (v-w)) through a function Udp () according to the array hsv and the array U (v-w), wherein the formula for calculating the Udp (hsv, U (v-w)) is as follows:

the obtained Udp (hsv, U (v-w)) is the degree of change of hsv and U (v-w); go to S409;

s409, marking an array obtained by multiplying each element in the hsv array by Udp (hsv, U (v-w)) as an hs _2 array, hs _2= [ hsv = Udp (1) ], and hs _2(i) represents an element with a sequence number of i in the hs _2 array, that is, hs _2= [ hs _2(i) ], hs _2(i) = hsv (i) = Udp (hsv, U (v-w)); go to S410;

s410, calculating a threshold lambda according to the U (v-w) array and the hs _2 array, wherein the calculation formula of the threshold lambda is as follows:

the calculated lambda is the required threshold, whether the constraint condition lambda is more than 0 is judged, if yes, S4101 is carried out, and if not, S4102 is carried out;

s4101, calculating to obtain the arithmetic mean U of each element in an array U (v-w); calculating to obtain the arithmetic mean of each element in the array hs _2 as h; combining the value of j and the value of u into a key-value pair, taking the value of j as the key of the key-value pair, and taking an array consisting of the value of u and the value of h as [ u, h ] as the value of the key-value pair, wherein u is taken as a first value of the key-value pair, h is taken as a second value of the key-value pair, and the key-value pair is taken as < j, [ u, h ] >; adding the key-value pair < j, [ u, h ] > to the set hslist; turning to S4102;

s4102, if the hslist is an empty set, turning to S4103, and if the hslist is not an empty set, recording a set formed by second values of all key value pairs in the set hslist as a set hset; judging whether the arithmetic mean value of the numerical values of each element in the set hset is larger than or equal to the numerical value of the highest magnetic field intensity output h2 of the direct-current magnetic field generator, if so, turning to S4104, otherwise, turning to S4103;

s4103, increasing the value of j by 1; emptying elements in the hsv array, and adding the elements in the hs _2 array into the hsv array; emptying elements in the Uv array, adding the elements in the Uw array into the Uv array, and emptying the elements in the Uw array; emptying elements in the Hv array, adding the elements in the Hw array into the Hv array, and emptying the elements in the Hw array; go to S4042;

s4104, outputting a set hslist; ending the program;

in the output set hslist, in each element of hslist, the first value of each element is the voltage recorded after the magnetic field is changed, and the second value of each element is the magnetic field intensity changed corresponding to the first value of the element.

Further, in S500, the method for calculating and obtaining the dc magnetic field value when the induced voltage reaches the maximum value includes: in the set hslist, calculating the key value pair with the maximum value of the first value of the values of the key value pairs in the selected set hslist, recording the key value pair as a target key value pair < j ', [ u', h '], further obtaining a second value h' in the values [ u 'and h' of the target key value pair, setting the magnetic field intensity of the direct-current magnetic field generator to h 'and outputting a direct-current magnetic field with the magnetic field intensity value of h' to the magnetoelectric composite material.

The test system of the magnetoelectric composite material sensor comprises: the test system of the magnetoelectric composite material sensor can be operated in computing equipment such as a desktop computer, a notebook computer, a palm computer, a cloud data center and the like, and the operable system can include, but is not limited to, a processor, a memory and a server cluster.

As shown in fig. 2, the test system for a magnetoelectric composite sensor according to an embodiment of the present invention includes: a processor, a memory, and a computer program stored in the memory and executable on the processor, the processor implementing the steps in one of the above-described embodiments of a method for testing a magnetoelectric composite sensor when executing the computer program, the processor executing the computer program to run in the units of the following system:

the initial state setting unit is used for setting an initial state direct-current magnetic field and recording initial state induction voltage of the magnetoelectric composite material under the initial state direct-current magnetic field;

the magnetic field increment unit is used for setting a first group of magnetic field increment values, recording corresponding different induced voltages of the magnetoelectric composite material under an initial state direct-current magnetic field and after the first group of magnetic field increment values are added, and taking the recorded corresponding different induced voltages under different magnetic fields as a first group of increment induced voltage values;

the induced voltage calculation unit is used for calculating the change degree of the induced voltage corresponding to the direct-current magnetic field through the first group of magnetic field increment values and the first group of increment induced voltage values;

a magnetic field step length changing unit for setting a magnetic field change step length according to the degree of change and changing the DC magnetic field in the initial state by the magnetic field change step length;

and the induction voltage acquisition unit is used for calculating and acquiring the direct-current magnetic field value when the induction voltage reaches the highest value.

The test system of the magnetoelectric composite material sensor can be operated in computing equipment such as a desktop computer, a notebook computer, a palm computer and a cloud data center. The test system of the magnetoelectric composite material sensor comprises a processor and a memory. It will be understood by those skilled in the art that the described examples are merely illustrative of a method and system for testing a magnetoelectric composite sensor and do not constitute a limitation on a method and system for testing a magnetoelectric composite sensor, and may include more or less components than the described components, or some components in combination, or different components, for example, the system for testing a magnetoelectric composite sensor may also include input and output devices, network access devices, buses, etc.

The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete component Gate or transistor logic, discrete hardware components, etc. The general processor can be a microprocessor or the processor can also be any conventional processor and the like, the processor is a control center of the test system of the magnetoelectric composite material sensor, and various interfaces and lines are utilized to connect various subareas of the test system of the whole magnetoelectric composite material sensor.

The memory can be used for storing the computer program and/or the module, and the processor can realize various functions of the test method and the test system of the magnetoelectric composite material sensor by operating or executing the computer program and/or the module stored in the memory and calling data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (such as a sound playing function, an image playing function, etc.), and the like; the storage data area may store data (such as audio data, a phonebook, etc.) created according to the use of the cellular phone, and the like. In addition, the memory may include high speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.

The invention provides a test method and a test system for a magnetoelectric composite material sensor, which are characterized by setting a direct current magnetic field in an initial state, recording the initial state induced voltage of the magnetoelectric composite material under the direct current magnetic field in the initial state, further setting a first group of magnetic field increment values, recording the corresponding different induced voltages of the magnetoelectric composite material under the direct current magnetic field in the initial state after adding the first group of magnetic field increment values, taking the corresponding different induced voltages under the different recorded magnetic fields as the first group of increment induced voltage values, calculating the change degree of the direct current magnetic field corresponding to the induced voltages through the first group of magnetic field increment values and the first group of increment induced voltage values, changing the direct current magnetic field in the initial state by the magnetic field change step length, and obtaining the direct current magnetic field value when the induced voltage reaches the highest value.

Although the present invention has been described in considerable detail and with reference to certain illustrated embodiments, it is not intended to be limited to any such details or embodiments or any particular embodiment, so as to effectively encompass the intended scope of the invention. Furthermore, the foregoing describes the invention in terms of embodiments foreseen by the inventor for which an enabling description was available, notwithstanding that insubstantial modifications of the invention, not presently foreseen, may nonetheless represent equivalent modifications thereto.