阅读说明：本技术 硅基电光调制器及其制备方法 (Silicon-based electro-optical modulator and preparation method thereof ) 是由 文花顺 许博蕊 孙甲政 翟鲲鹏 陈伟 祝宁华 李明 于 2021-08-31 设计创作，主要内容包括：本发明提供了一种硅基电光调制器及其制备方法。方法包括选择SOI晶圆,SOI晶圆为多层结构,自下而上为硅衬底、第一二氧化硅埋层、顶部硅层；顶部硅层中制备第二二氧化硅埋层,将顶部硅层分为上下两层,上层为第一硅层,下层为波导层,第二二氧化硅埋层一部分向上凸起,使下方波导层形成脊形结构,脊形结构向上凸起部分为硅波导,第二二氧化硅埋层内部存在压应力,向外挤压第一硅层及波导层,使硅波导左、右上角因受挤压引起原子排列改变,在硅波导中诱导出二阶非线性极化率；第一硅层上设置GSG单驱动共面波导行波电极,使得其施加的电场可以到达硅波导。本发明克服了常规硅电光调制器的带宽受限于载流子运输时间很难再提高的问题且插损小、可3D光子集成。(The invention provides a silicon-based electro-optic modulator and a preparation method thereof. The method comprises selecting an SOI wafer, wherein the SOI wafer is of a multilayer structure and comprises a silicon substrate, a first silicon dioxide buried layer and a top silicon layer from bottom to top; preparing a second silicon dioxide buried layer in the top silicon layer, dividing the top silicon layer into an upper layer and a lower layer, wherein the upper layer is a first silicon layer, the lower layer is a waveguide layer, one part of the second silicon dioxide buried layer protrudes upwards to enable the lower waveguide layer to form a ridge structure, the upward protruding part of the ridge structure is a silicon waveguide, and a compressive stress exists in the second silicon dioxide buried layer and extrudes the first silicon layer and the waveguide layer outwards to enable the atomic arrangement of the left upper corner and the right upper corner of the silicon waveguide to be changed due to extrusion, so that a second-order nonlinear polarizability is induced in the silicon waveguide; the GSG single-driven coplanar waveguide traveling wave electrode is arranged on the first silicon layer, so that an electric field applied by the electrode can reach the silicon waveguide. The invention overcomes the problem that the bandwidth of the conventional silicon electro-optical modulator is limited by the carrier transport time and is difficult to improve, has small insertion loss and can realize 3D photon integration.)

1. A silicon-based electro-optic modulator, comprising:

the SOI wafer is of a multilayer structure and sequentially comprises a silicon substrate, a first silicon dioxide buried layer and a top silicon layer from bottom to top;

a second buried silicon dioxide layer embedded in the top silicon layer and dividing the top silicon layer into an upper layer and a lower layer, the upper layer being a first silicon layer and the lower layer being a waveguide layer,

a portion of the second buried silicon dioxide layer is raised upward so that the lower waveguide layer forms a ridge structure, the upwardly raised portion of the ridge structure being a silicon waveguide,

the second silicon dioxide buried layer has compressive stress inside and extrudes the first silicon layer and the waveguide layer outwards;

and the GSG single-drive coplanar waveguide traveling wave electrode is arranged on the first silicon layer, so that an electric field applied by the GSG single-drive coplanar waveguide traveling wave electrode can reach the silicon waveguide.

2. A method for preparing a silicon-based electro-optic modulator is characterized by comprising the following steps:

selecting an SOI wafer, wherein the SOI wafer is of a multilayer structure and sequentially comprises a silicon substrate, a first silicon dioxide buried layer and a top silicon layer from bottom to top;

preparing a second buried silicon dioxide layer in the top silicon layer, dividing the top silicon layer into an upper layer and a lower layer, wherein the upper layer is a first silicon layer and the lower layer is a waveguide layer,

a portion of the second buried silicon dioxide layer is raised upward so that the lower waveguide layer forms a ridge structure, the upwardly raised portion of the ridge structure being a silicon waveguide,

the second silicon dioxide buried layer has compressive stress inside and extrudes the first silicon layer and the waveguide layer outwards;

and arranging a GSG single-drive coplanar waveguide traveling wave electrode on the first silicon layer, so that an electric field applied by the GSG single-drive coplanar waveguide traveling wave electrode can reach the silicon waveguide.

3. The method of claim 2, wherein the forming the second buried silicon dioxide layer comprises:

performing thermal oxidation reaction on the upper surface of the top silicon layer to form a first silicon dioxide layer on the upper part of the top silicon layer;

transferring the mask pattern to the first silicon dioxide layer, and etching the first silicon dioxide layer according to the mask pattern to obtain a silicon dioxide waveguide;

depositing silicon dioxide on the silicon dioxide waveguide and the surface of the top silicon layer exposed by etching to form a second silicon dioxide layer with a certain thickness;

injecting oxygen ions into the top silicon layer from top to bottom through the second silica layer and the silica waveguide to form an oxygen-rich ion layer, wherein a portion of the oxygen-rich ion layer below the silica waveguide is upwardly convex;

and performing high-temperature annealing to enable oxygen ions in the oxygen-rich ion layer to react with silicon atoms in the oxygen-rich ion layer to generate a second silicon dioxide buried layer.

4. The method of claim 3, wherein the high temperature annealing is preceded by:

etching the second silicon dioxide layer and the silicon dioxide waveguide to expose the top silicon layer;

depositing a high density silicon dioxide protective layer on the top silicon layer to prevent oxidation of the top silicon layer.

5. The method of claim 4, wherein the high temperature anneal is followed by etching the high density silicon dioxide protective layer to expose the first silicon layer.

6. The method of claim 2, wherein the top silicon layer has a thickness of 600 nm.

7. The method of claim 3, wherein the first silica layer has a thickness of 100 nm.

8. The method of claim 3, wherein the second silica layer has a thickness of 50 nm.

9. The method of claim 3, wherein the total dosage of the oxygen ion implantation is 2 x 10¹⁷～7×10¹⁷/cm²The oxygen ion implantation energy range is 150-200 KeV.

10. The method for manufacturing a silicon-based electro-optic modulator according to claim 3, wherein the high temperature annealing is performed at 1200 ℃ for 2-3 hours.

Technical Field

The invention relates to a silicon-based electro-optic modulator and a preparation method thereof.

Background

Silicon substrate has small size, low energy consumption, CMOS process compatibility and is convenient for realizing monolithic and micro-nano integration with the existing electronic device and photonic device, silicon photonics which utilizes silicon substrate to realize the functions of light generation, modulation, transmission, control, detection and the like has been acknowledged as one of ideal technologies for breaking through the bottlenecks of computer and communication super-large capacity, super-high speed information transmission and processing, and the silicon photonics is highly concerned by researchers and becomes a hotspot in the field of photoelectronic research in recent years. At present, key silicon-based devices, such as raman lasers, electro-optical modulators, photodetectors, wavelength conversion, optical logic gates, code pattern conversion, optical filtering, and the like, have been proposed to promote the development of silicon-based photonics, and these research results have been widely applied in the fields of optical communication, optical sensing, and the like, and also have an attractive prospect in the aspects of photonic integration, optical interconnection, optical computation, and the like.

The silicon electro-optical modulator is the most critical device in the silicon-based device and plays an important role in converting an electric signal into an optical signal. However, silicon has a crystal structure with central inversion symmetry, and does not have a second-order nonlinear polarizability χ⁽²⁾And thus silicon does not have electro-optic modulation characteristics (Pockels effect). Generally, a silicon electro-optical modulator plays a role in modulation by changing the refractive index of silicon by changing the concentration of free carriers through injection, accumulation or depletion of the free carriers caused by doping based on a plasma dispersion effect. The bandwidth of silicon electro-optical modulators based on the plasma dispersion effect is limited by the fact that the carrier transport time is difficult to increase, and doping causes a reduction in modulation speed and non-linearity and brings aboutInsertion loss.

Disclosure of Invention

In order to solve the problems, the invention provides a silicon-based electro-optic modulator and a preparation method thereof.

In one aspect of the invention, a silicon-based electro-optic modulator is provided, comprising: the SOI wafer is of a multilayer structure and sequentially comprises a silicon substrate, a first silicon dioxide buried layer and a top silicon layer from bottom to top; the second silicon dioxide buried layer is embedded in the top silicon layer and divides the top silicon layer into an upper layer and a lower layer, the upper layer is a first silicon layer, the lower layer is a waveguide layer, wherein one part of the second silicon dioxide buried layer protrudes upwards to enable the lower waveguide layer to form a ridge structure, the upward protruding part of the ridge structure is a silicon waveguide, and the first silicon layer and the waveguide layer are extruded outwards due to the existence of compressive stress in the second silicon dioxide buried layer; and the GSG single-drive coplanar waveguide traveling wave electrode is arranged on the first silicon layer, so that an electric field applied by the GSG single-drive coplanar waveguide traveling wave electrode can reach the silicon waveguide.

In another aspect of the present invention, a method for manufacturing a silicon-based electro-optic modulator is provided, which includes: selecting an SOI wafer which is of a multilayer structure and sequentially comprises a silicon substrate, a first silicon dioxide buried layer and a top silicon layer from bottom to top; preparing a second silicon dioxide buried layer in the top silicon layer, dividing the top silicon layer into an upper layer and a lower layer, wherein the upper layer is a first silicon layer, the lower layer is a waveguide layer, a part of the second silicon dioxide buried layer protrudes upwards to form a ridge structure on the waveguide layer below, the upward protruding part of the ridge structure is a silicon waveguide, and the first silicon layer and the waveguide layer are extruded outwards due to the existence of compressive stress in the second silicon dioxide buried layer; and arranging a GSG single-drive coplanar waveguide traveling wave electrode on the first silicon layer, so that an electric field applied by the GSG single-drive coplanar waveguide traveling wave electrode can reach the silicon waveguide.

Furthermore, the preparation method of the silicon-based electro-optic modulator of the invention comprises the following steps: performing thermal oxidation reaction on the upper surface of the top silicon layer to form a first silicon dioxide layer on the upper part of the top silicon layer; transferring the mask pattern to the first silicon dioxide layer, and etching the first silicon dioxide layer according to the mask pattern to obtain a silicon dioxide waveguide; depositing silicon dioxide on the silicon dioxide waveguide and the surface of the top silicon layer exposed by etching to form a second silicon dioxide layer with a certain thickness; injecting oxygen ions into the top silicon layer from top to bottom through the second silicon dioxide layer and the silicon dioxide waveguide to form an oxygen-rich ion layer, wherein the part of the oxygen-rich ion layer below the silicon dioxide waveguide protrudes upwards; and annealing at high temperature to enable oxygen ions in the oxygen-enriched ion layer to react with silicon atoms in the oxygen-enriched ion layer to generate a second silicon dioxide buried layer.

Further, the preparation method of the silicon-based electro-optic modulator comprises the following steps of before high-temperature annealing: etching the second silicon dioxide layer and the silicon dioxide waveguide to expose the top silicon layer; a high density silicon dioxide protective layer is deposited on the top silicon layer to prevent oxidation of the top silicon layer.

Furthermore, according to the preparation method of the silicon-based electro-optic modulator, after high-temperature annealing, the high-density silicon dioxide protective layer is etched, so that the first silicon layer is exposed.

Furthermore, the thickness of the top silicon layer is 600nm in the preparation method of the silicon-based electro-optic modulator.

Furthermore, according to the preparation method of the silicon-based electro-optic modulator, the thickness of the first silicon dioxide layer is 100 nm.

Furthermore, in the preparation method of the silicon-based electro-optic modulator, the thickness of the second silicon dioxide layer is 50 nm.

Furthermore, the total dosage range of the oxygen ion implantation of the preparation method of the silicon-based electro-optical modulator is 2 multiplied by 10¹⁷～7×10¹⁷/cm²The oxygen ion implantation energy range is 150-200 KeV.

Further, according to the preparation method of the silicon-based electro-optic modulator, the high-temperature annealing temperature is 1200 ℃, and the time is 2-3 hours.

The invention has the following beneficial effects:

(1) transferring the waveguide pattern to the buried layer by oxygen ion implantation and high temperature annealing to form a buried ridge silicon waveguide structure, and regulating the temperature and time of the high temperature annealingStress level in ridge silicon waveguide breaks through the central inversion symmetrical structure of silicon, and second-order nonlinear polarizability x is induced in ridge silicon waveguide⁽²⁾Therefore, the ridge silicon waveguide has the electro-optic modulation characteristic, the high-speed electro-optic modulator is realized, and the problem that the bandwidth of the conventional silicon electro-optic modulator is limited by the carrier transport time and is difficult to improve is solved.

(2) The electro-optic modulation is realized by utilizing the second-order nonlinear polarizability in the buried layer ridge-shaped silicon waveguide structure, the buried layer ridge-shaped silicon waveguide structure is formed by transferring the waveguide pattern to the buried layer, and the problems of high side wall roughness and large insertion loss caused by ion implantation in the conventional silicon electro-optic modulator in the scheme of preparing the silicon waveguide are solved, so that the insertion loss is small.

(3) The silicon electro-optical modulator is in the buried layer, and the first silicon layer can be used for manufacturing other electro-optical devices, so that 3D photon integration can be realized.

Drawings

FIG. 1 is a schematic diagram of a silicon-based electro-optic modulator of the present invention;

FIG. 2 is a flow chart of a method for manufacturing a silicon-based electro-optic modulator according to the present invention;

FIG. 3 is a schematic flow chart of a method for fabricating a silicon-based electro-optic modulator according to some embodiments of the present invention during fabrication of a second buried silicon dioxide layer;

FIG. 4 is a schematic diagram of the steps of a method for fabricating a silicon-based electro-optic modulator according to an embodiment of the present invention;

fig. 5 is a diagram of optical and electric field distributions of a silicon-based electro-optic modulator according to an embodiment of the present invention.

In the figure:

1-a silicon substrate; 2-a first buried layer of silicon dioxide; 3-a top silicon layer; 4-a second buried silicon dioxide layer; 5-a first silicon layer; 6-a waveguide layer; a 7-silicon waveguide; 8-GSG single-drive coplanar waveguide traveling wave electrode; 9-a first silicon dioxide layer; 10-a silica waveguide; 11-a second silicon dioxide layer; 12-an oxygen-rich ionic layer; 13-high density silica protective layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.

Fig. 1 is a schematic structural diagram of a silicon-based electro-optic modulator according to the present invention.

The Silicon-based electro-optic modulator comprises an SOI (Silicon-On-Insulator, Silicon On an insulating substrate) wafer, wherein the SOI wafer is of a multilayer structure and comprises a Silicon substrate 1, a first Silicon dioxide buried layer 2 and a top Silicon layer 3 from bottom to top in sequence. The second buried silicon dioxide layer 4 is buried in the top silicon layer 3, so that the top silicon layer 3 is divided into an upper layer and a lower layer by the second buried silicon dioxide layer 4, the upper layer is the first silicon layer 5, and the lower layer is the waveguide layer 6. Wherein a portion of the second buried silicon dioxide layer 4 is raised upwards so that the lower waveguide layer 6 forms a ridge structure, the upwardly raised portion of the ridge structure being a silicon waveguide 7.

The second buried silicon dioxide layer 4 has a compressive stress inside, and the first silicon layer 5 and the waveguide layer 6 are extruded outwards, so that the atom arrangement structure of the upper left corner and the upper right corner of the silicon waveguide 7 is changed due to extrusion, and a second-order nonlinear polarizability is induced in the silicon waveguide 7.

The GSG single-drive coplanar waveguide traveling wave electrode 8 is arranged on the first silicon layer 5, so that an electric field applied by the GSG single-drive coplanar waveguide traveling wave electrode 8 can reach the silicon waveguide 7.

The method for manufacturing the silicon-based electro-optic modulator of the present invention is described below. Fig. 2 is a schematic flow chart of a method for manufacturing a silicon-based electro-optic modulator according to the present invention, which includes:

s201, selecting an SOI wafer which is of a multilayer structure and sequentially comprises a silicon substrate 1, a first silicon dioxide buried layer 2 and a top silicon layer 3 from bottom to top. The thickness of the top silicon layer 3 is preferably 600 nm.

S202, preparing a second buried silicon dioxide layer 4 in the top silicon layer 3, and dividing the top silicon layer 3 into an upper layer and a lower layer, wherein the upper layer is a first silicon layer 5, and the lower layer is a waveguide layer 6.

In step S202, a portion of the prepared second buried silicon oxide layer 4 is raised upward, so that the lower waveguide layer 6 forms a ridge structure, and the upward raised portion of the ridge structure is the silicon waveguide 7.

The second buried silicon dioxide layer 4 has a compressive stress inside, and the first silicon layer 5 and the waveguide layer 6 are extruded outwards, so that the atom arrangement structure of the upper left corner and the upper right corner of the silicon waveguide 7 is changed due to extrusion, and a second-order nonlinear polarizability is induced in the silicon waveguide 7.

And S203, arranging the GSG single-drive coplanar waveguide traveling wave electrode 8 on the first silicon layer 5, so that the electric field applied by the GSG single-drive coplanar waveguide traveling wave electrode 8 can reach the silicon waveguide 7. In some embodiments, the GSG single-driven coplanar waveguide traveling-wave electrode 8 is connected to the first silicon layer 5 by evaporation or electroplating.

Fig. 3 is a schematic flow chart of a method for fabricating a silicon-based electro-optic modulator according to some embodiments of the present invention when fabricating a second buried silicon dioxide layer. Some embodiments of the present invention further include, when preparing the second buried silicon dioxide layer 4:

s2021, performing a thermal oxidation reaction on the top surface of the top silicon layer 3 to form a first silicon dioxide layer 9 on the top of the top silicon layer 3. The thickness of the first silicon dioxide layer 9 is preferably 100 nm.

S2022, transferring the mask pattern to the first silicon dioxide layer 9, and etching the first silicon dioxide layer 9 according to the mask pattern to obtain the silica waveguide 10. The etching can adopt dry etching such as plasma etching, reactive ion etching and the like, or adopt wet etching.

S2023, depositing silicon dioxide on the silicon dioxide waveguide 10 and the surface of the top silicon layer 3 exposed by etching to form a second silicon dioxide layer 11 with a certain thickness. The silicon dioxide may be deposited by Plasma Enhanced Chemical (PECVD) vapor deposition to a thickness of 50 nm.

S2024, injecting oxygen ions into the top silicon layer 3 from top to bottom through the second silica layer 11 and the silica waveguide 10 to form an oxygen-rich ion layer 12, wherein a portion of the oxygen-rich ion layer 12 under the silica waveguide 10 is upwardly convex.

In step S2024, when oxygen ions are implanted, since the thicknesses of the silica barrier layers formed above the top silicon layer 3 by the second silica layer 11 and the silica waveguide 10 are different, the oxygen ions are implanted more shallowly at a portion below the silica waveguide 10 than at other positions, and thus the oxygen ion-rich layer 12 is formed to protrude upward at a portion below the silica waveguide 10.

In some embodiments, the total dose range for oxygen ion implantation is 2 × 10¹⁷～7×10¹⁷/cm²The oxygen ion implantation energy range is 150-200 KeV.

In some embodiments, to make the oxygen ion distribution in the oxygen ion-rich layer 12 uniform, 1/4 total doses are implanted each time, then the SOI wafer is rotated 90 ° in one direction around the center of the wafer, the oxygen ion implantation is repeated and the SOI wafer is rotated 90 ° in the same direction around the center of the wafer until all the oxygen ions are implanted uniformly into the top silicon layer 3.

S2025, annealing at high temperature to make the oxygen ions in the oxygen-rich ion layer 12 react with the silicon atoms in the oxygen-rich ion layer 12, so as to generate the second buried silicon dioxide layer 4.

In step S2025, the high temperature annealing causes the oxygen ions in the silicon atom gaps in the oxygen ion-rich layer 12 to react with the original silicon atoms at the silicon atom gaps, so as to form the uniform second buried silicon dioxide layer 4. Because the oxygen-rich ion layer 12 is partially convex upwards, the second buried silicon dioxide layer 4 generated by the reaction also has a corresponding part convex upwards. The lower waveguide layer 6 now forms a ridge structure, the upwardly protruding part of which is a silicon waveguide 7.

Since silicon and silica have different molar volumes (molar volumes), the molar volume of silicon is 12.17cm³Mol, the molar volume of silica is 27.27cm³And/mol, so that when the oxygen ions in the oxygen ion-rich layer 12 react with silicon atoms to form the second uniform buried silicon dioxide layer 4, the volume of the second uniform buried silicon dioxide layer is expanded by 2.2 times. The volume expansion causes a compressive stress in the second buried silicon oxide layer 4, compressing the surrounding materials, such as the first silicon layer 5 and the waveguide layer 6. Because the waveguide layer 6 is of a ridge structure, the volume expansion of the second buried silicon dioxide layer 4 can compress the upper left corner and the upper right corner of the silicon waveguide 7, so that the arrangement structure of atoms in the silicon waveguide 7 is changed, the central inversion symmetric structure of silicon is broken, and the second-order nonlinear polarizability is induced in the silicon.

In addition, in the high temperature annealing stageStage, high temperature environment can catalyze SiO₂Thereby accelerating the generation of stress, and as the high temperature annealing temperature and time increase, the silicon and silicon dioxide are in a solid and liquid state, the viscosity thereof decreases, and the stress is gradually released, so that the stress level in the silicon waveguide 7 can be adjusted by controlling the high temperature annealing temperature and time.

In order to maximize the stress in the silicon waveguide 7 and at the same time reduce the stress in the first silicon layer 5, the annealing temperature is 1200 ℃ in some embodiments, and the annealing time is 2-3 hours.

The damage in the first silicon layer 5 caused by oxygen ion implantation is repaired in high-temperature annealing, and the first silicon layer can be used for preparing other optoelectronic devices, so that vertical integration is performed on the first silicon layer and the formed ultra-low loss silicon waveguide 7, and 3D integration is realized, so that the future large-scale optoelectronic integration is adapted.

In some embodiments, the high temperature annealing further comprises, before: etching the second silicon dioxide layer 11 and the silicon dioxide waveguide 10 to expose the top silicon layer 3, wherein the etching can be performed by a plasma etching method; a high density protective layer 13 of silicon dioxide is deposited on the top silicon layer 3 to prevent the top silicon layer 3 from being oxidized during the high temperature anneal.

In some embodiments, the high density silicon dioxide protective layer 13 is deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD), and the high density silicon dioxide protective layer 13 is deposited to a thickness of 350 nm. After the high temperature anneal is completed, the high density silicon dioxide protective layer 13 is removed, such as by etching directly. The upper surface of the first silicon layer 5 is exposed at this time.

The following describes the method for manufacturing a silicon-based electro-optic modulator according to the present invention in detail with reference to a specific embodiment. FIG. 4 is a schematic diagram of the steps of a method for manufacturing a silicon-based electro-optic modulator according to an embodiment of the present invention.

(1) Selecting an SOI wafer, wherein the SOI wafer comprises a three-layer structure, namely a silicon substrate 1, a first silicon dioxide buried layer 2 and a top silicon layer 3 from bottom to top in sequence, and the thickness of the top silicon layer 3 is 600 nm.

(2) And performing thermal oxidation reaction on the upper surface of the top silicon layer 3 to form a first silicon dioxide layer 9 on the top silicon layer 3, wherein the thickness of the first silicon dioxide layer 9 is 100 nm.

(3) The mask pattern is transferred to the first silicon dioxide layer 9, and the first silicon dioxide layer 9 is etched by a plasma etching method according to the mask pattern to obtain the silicon dioxide waveguide 10.

(4) And depositing silicon dioxide on the silicon dioxide waveguide 10 and the surface of the top silicon layer 3 exposed by etching by adopting a plasma enhanced chemical vapor deposition method to form a second silicon dioxide layer 11 with the thickness of 50 nm.

(5) Oxygen ions are injected into the top silicon layer 3 from top to bottom through the second silica layer 11 and the silica waveguide 10, forming an oxygen-rich ion layer 12, wherein the portion of the oxygen-rich ion layer 12 below the silica waveguide 10 is convex upward. Total dosage of oxygen ion implantation is 2 × 10¹⁷/cm²The oxygen ion implantation energy was 150 KeV.

(6) The second silicon dioxide layer 11 and the silicon dioxide waveguide 10 are etched by plasma etching to expose the top silicon layer 3.

(7) A high density protective layer 13 of silicon dioxide is deposited on the top silicon layer 3 using an inductively coupled plasma enhanced chemical vapour deposition process to prevent oxidation of the top silicon layer 3 during the high temperature anneal.

(8) And (3) annealing at high temperature to enable oxygen ions in the oxygen-rich ion layer 12 to react with silicon atoms in the oxygen-rich ion layer 12 to generate a second buried silicon dioxide layer 4.

(9) The high-density silicon dioxide protective layer 13 is removed by plasma etching to expose the upper surface of the first silicon layer 5.

(10) And connecting the GSG single-drive coplanar waveguide traveling wave electrode 8 to the first silicon layer 5 in an electroplating way.

Thus, the silicon-based electro-optic modulator according to the technical solution of the present invention is manufactured in this embodiment. The optical and electric field profiles are shown in fig. 5.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.