阅读说明：本技术 一种碳化硅材料抛光方法 (Silicon carbide material polishing method ) 是由 董兴玉 刘民 于 2021-08-23 设计创作，主要内容包括：本发明涉及一种碳化硅材料抛光方法,包括如下步骤：S1、将800目、1200目及1500目碳化硅微粉分别与非水溶剂混合液搅拌均匀,得到不同规格的碳化硅抛光浆；S2、在需要抛光的碳化硅部件内部填充800目碳化硅粉制成的碳化硅微粒浆,通过搅拌器将内部的碳化硅浆进行高速旋转研磨进行粗抛,将表面杂质及附着物打磨平整；S3、将1200目碳化硅粉制成的碳化硅浆倒入抛光部件内部,高速旋转研磨,进行中抛；S4、将1500目碳化硅粉制成的碳化硅浆倒入抛光部件内部,高速旋转研磨,进行精抛；S5、用金刚石粉对以上抛光后的瑕疵进行维修。本发明抛光方法可以降低超精细化工部件表面粗糙度、提高抛光表面光洁度。(The invention relates to a silicon carbide material polishing method, which comprises the following steps: s1, uniformly stirring the silicon carbide micro powder of 800 meshes, 1200 meshes and 1500 meshes with the non-aqueous solvent mixed solution respectively to obtain silicon carbide polishing slurry of different specifications; s2, filling silicon carbide particle slurry prepared from 800-mesh silicon carbide powder into a silicon carbide component to be polished, carrying out high-speed rotary grinding on the silicon carbide particle slurry in the silicon carbide component through a stirrer to carry out rough polishing, and grinding and flattening surface impurities and attachments; s3, pouring silicon carbide slurry prepared from 1200-mesh silicon carbide powder into the polishing part, and carrying out high-speed rotary grinding and middle polishing; s4, pouring silicon carbide slurry prepared from 1500-mesh silicon carbide powder into the polishing part, and carrying out high-speed rotary grinding for fine polishing; and S5, repairing the polished flaws by using diamond powder. The polishing method can reduce the surface roughness of the hyperfine chemical part and improve the polished surface finish.)

1. A silicon carbide material polishing method is characterized by comprising the following steps:

s1, uniformly stirring the silicon carbide micro powder of 800 meshes, 1200 meshes and 1500 meshes with the non-aqueous solvent mixed solution respectively to obtain silicon carbide polishing slurry of different specifications;

s2, filling silicon carbide particle slurry prepared from 800-mesh silicon carbide powder into a silicon carbide component to be polished, carrying out high-speed rotary grinding on the silicon carbide particle slurry in the silicon carbide component through a stirrer to carry out rough polishing, and grinding and flattening surface impurities and attachments;

s3, pouring silicon carbide slurry prepared from 1200-mesh silicon carbide powder into the polishing part, and carrying out high-speed rotary grinding and middle polishing;

s4, pouring silicon carbide slurry prepared from 1500-mesh silicon carbide powder into the polishing part, and carrying out high-speed rotary grinding for fine polishing;

and S5, repairing the polished flaws by using diamond powder.

2. A silicon carbide material polishing method as set forth in claim 1, wherein: the non-aqueous solvent comprises one or more of ethylene glycol, propylene glycol, polyethylene glycol, isopropanol, glycerol and the like.

3. A silicon carbide material polishing method as set forth in claim 1, wherein: the step S1 further includes an oxidizing agent.

4. A silicon carbide material polishing method as set forth in claim 3, wherein: the oxidant includes one or more of chlorate, perchlorate, inorganic peroxide, nitrate, and the like.

5. A silicon carbide material polishing method as set forth in claim 1, wherein: the rotation speed 600 + 800r/min in the step S2, the rotation speed 600 + 800r/min in the step S3, the rotation speed 400 + 600r/min in the step S4 and the rotation speed 300 + 500r/min in the step S5.

6. A silicon carbide material polishing method as set forth in claim 1, wherein: the silicon carbide slurry contains 40-55 wt% of silicon carbide.

7. A silicon carbide material polishing method as set forth in claim 1, wherein: the granularity of the diamond micropowder is not more than W5.

8. A silicon carbide material polishing method as set forth in claim 4, wherein: the molar concentration of the oxidant in the silicon carbide slurry is 1-4 mol/L.

9. A silicon carbide material polishing method as set forth in claim 1, wherein: the stirrer structure adopts a fan blade-shaped stirrer similar to a spiral.

Technical Field

The invention relates to the technical field of polishing, in particular to a polishing method of a silicon carbide material in the fine chemical industry.

Background

Silicon carbide has the characteristics of high hardness, high wear resistance, high corrosion resistance, high-temperature strength and the like, and is applied to various wear-resistant, corrosion-resistant and high-temperature-resistant mechanical parts and fields. For example, silicon carbide is used for manufacturing reaction kettles, heat exchangers, rectifying towers, condensing systems and the like. In the fine chemical industry, some parts internal surfaces made of silicon carbide need to be polished, so that impurities on the surfaces of internal parts can be prevented from falling off when the equipment runs, and the purity of materials in the internal parts is prevented from being influenced. Meanwhile, if the inner surface is not completely treated, the inner medium is adhered, the inner surface of the component is easily corroded, and the practical service life of the component is shortened; moreover, too much adhering media can result in wasted material and increased operating costs, and more adhering media is more disadvantageous to cleaning over time.

Because the silicon carbide has the characteristic of high hardness, the corners of common hard abrasive particles are easily passivated by the silicon carbide, so that the problems of unstable polishing process, poor polishing effect, low polishing and grinding efficiency and the like are caused.

Disclosure of Invention

In order to solve the above technical problems, an object of the present invention is to provide a method for polishing a silicon carbide material.

The technical scheme of the invention is as follows:

a silicon carbide material polishing method is characterized by comprising the following steps:

s1, uniformly stirring the silicon carbide micro powder of 800 meshes, 1200 meshes and 1500 meshes with the non-aqueous solvent mixed solution respectively to obtain silicon carbide polishing slurry of different specifications;

s2, filling silicon carbide particle slurry prepared from 800-mesh silicon carbide powder into a silicon carbide component to be polished, carrying out high-speed rotary grinding on the silicon carbide particle slurry in the silicon carbide component through a stirrer to carry out rough polishing, and grinding and flattening surface impurities and attachments;

s3, pouring silicon carbide slurry prepared from 1200-mesh silicon carbide powder into the polishing part, and carrying out high-speed rotary grinding and middle polishing;

s4, pouring silicon carbide slurry prepared from 1500-mesh silicon carbide powder into the polishing part, and carrying out high-speed rotary grinding for fine polishing;

and S5, repairing the polished flaws by using diamond powder.

Further, the non-aqueous solvent comprises one or more of ethylene glycol, propylene glycol, polyethylene glycol, isopropanol, glycerol and the like.

Further, step S1 includes an oxidizing agent.

Further, the oxidizing agent includes one or more of chlorate, perchlorate, inorganic peroxide, nitrate, and the like.

Further, the rotation speed in step S2 is 800r/min, the rotation speed in step S3 is 800r/min, the rotation speed in step S4 is 400 + 600r/min, and the rotation speed in step S5 is 300 + 500 r/min.

Further, the silicon carbide slurry contains 40-55 wt% of silicon carbide.

Further, the granularity of the diamond micropowder is not more than W5.

Furthermore, the molar concentration of the oxidant in the silicon carbide slurry is 1-4 mol/L.

Furthermore, the stirrer structure adopts a fan blade-shaped stirrer which is approximate to a spiral.

By the scheme, the invention at least has the following advantages:

the polishing method can reduce the surface roughness of the hyperfine chemical part and improve the polished surface finish.

The polishing slurry has stable surface quality, good polishing effect and high cutting efficiency, is not easy to passivate, can be recycled, reduces the polishing cost and can greatly improve the polishing efficiency by adopting the polishing method.

The polishing slurry disclosed by the invention adopts a non-corrosive oxidant, can ensure the stability of the silicon carbide slurry, does not generate heavy metal environmental pollution, and is green and environment-friendly.

The foregoing is a summary of the present invention, and in order to provide a clear understanding of the technical means of the present invention and to be implemented in accordance with the present specification, the following is a detailed description of the preferred embodiments of the present invention.

Detailed Description

The following examples are given to further illustrate the embodiments of the present invention. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.

The invention firstly adds a certain amount of oxidant into the silicon carbide particles with corresponding specifications, then adds a certain amount of non-aqueous solvent and uniformly stirs to prepare the silicon carbide slurry. The parts made of silicon carbide are placed on the fixed jig before polishing, so that stability and no shaking in the polishing process are guaranteed. Then filling silicon carbide slurry prepared by 800-mesh silicon carbide powder into the part to be polished, carrying out high-speed rotary grinding on the silicon carbide slurry in the part to be polished by a stirrer for rough polishing, and polishing and flattening surface impurities and attachments at the rotation speed of 600-800 r/min; pouring out the silicon carbide slurry polished in the previous step, filling the silicon carbide slurry prepared from 1200-mesh silicon carbide powder into a part to be polished, and performing middle polishing at the rotation speed of 600-800 r/min; pouring out the silicon carbide slurry polished in the previous step, filling the silicon carbide slurry prepared from 1500-mesh silicon carbide powder into a part to be polished, and performing fine polishing at the rotation speed of 400-600 r/min; and finally, pouring out the silicon carbide slurry polished in the previous step, pouring diamond micro powder into the polished part, and stirring the diamond micro powder by a stirrer to carry out flaw micro finishing on the surface of the polished part at the rotating speed of 300-500r/min so as to achieve the ultra-fine polishing effect and improve the polishing brightness, wherein the roughness Ra after final polishing is less than or equal to 0.05 mu m.

Specific examples are as follows:

example 1

Uniformly stirring the silicon carbide micro powder of 800 meshes, 1200 meshes and 1500 meshes with the mixed solution of the polyethylene glycol and the chlorate respectively to obtain the silicon carbide polishing slurry with different specifications. Wherein the mole concentration of chlorate in the silicon carbide polishing slurry is 1mol/L, and the content of silicon carbide is 40 wt%. Polishing the parts by using the prepared polishing slurry with different specifications, wherein the rotating speed is 600r/min during polishing of the polishing slurry prepared from 800-mesh silicon carbide powder; the rotating speed of polishing slurry prepared from 1200-mesh silicon carbide powder is 600r/min during polishing; the rotating speed of polishing slurry prepared from 1500-mesh silicon carbide powder is 400r/min during polishing; and finally, carrying out superfine polishing by using diamond micropowder at the rotating speed of 300r/min during polishing to achieve the polishing effect, wherein the roughness Ra of the final polished product is less than or equal to 0.05 mu m.

Example 2

Mixing the 800-mesh, 1200-mesh and 1500-mesh silicon carbide micro powder with the mixed solution of glycol and nitrate respectively, and stirring uniformly to obtain silicon carbide polishing slurry with different specifications. Wherein the molar concentration of nitrate in the silicon carbide polishing slurry is 4mol/L, and the content of silicon carbide is 55 wt%. Polishing the parts by using the prepared polishing slurry with different specifications, wherein the rotation speed of the polishing slurry prepared from 800-mesh silicon carbide powder is 800r/min during polishing; the rotation speed of polishing slurry prepared from 1200-mesh silicon carbide powder is 800r/min during polishing; the rotating speed is 600r/min when polishing slurry prepared from 1500-mesh silicon carbide powder is polished; and finally, carrying out superfine polishing by using diamond micropowder at the rotating speed of 500r/min during polishing to achieve the polishing effect, wherein the roughness Ra of the final polished product is less than or equal to 0.05 mu m.

Example 3

Mixing the 800-mesh, 1200-mesh and 1500-mesh silicon carbide micro powder with the mixed solution of ethylene glycol and inorganic peroxide respectively, and uniformly stirring to obtain silicon carbide polishing slurry with different specifications. Wherein the molar concentration of the inorganic peroxide in the silicon carbide polishing slurry is 2.5mol/L, and the content of the silicon carbide is 47.5 wt%. Polishing the parts by using the prepared polishing slurry with different specifications, wherein the rotating speed of the polishing slurry prepared from 800-mesh silicon carbide powder is 700r/min during polishing; when polishing, the rotation speed of polishing slurry prepared from 1200-mesh silicon carbide powder is 700 r/min; the rotation speed of polishing slurry prepared from 1500-mesh silicon carbide powder is 500r/min during polishing; and finally, carrying out superfine polishing by using diamond micropowder at the rotating speed of 400r/min during polishing to achieve the polishing effect, wherein the roughness Ra of the final polished product is less than or equal to 0.05 mu m.

The invention has the beneficial effects that:

the polishing method can reduce the surface roughness of the hyperfine chemical part and improve the polished surface finish.

The polishing slurry has stable surface quality, good polishing effect and high cutting efficiency, is not easy to passivate, can be recycled, reduces the polishing cost and can greatly improve the polishing efficiency by adopting the polishing method.

The polishing slurry disclosed by the invention adopts a non-corrosive oxidant, can ensure the stability of the silicon carbide slurry, does not generate heavy metal environmental pollution, and is green and environment-friendly.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.