TR assembly multistage link fault detection structure and method

文档序号:1887812 发布日期:2021-11-26 浏览:27次 中文

阅读说明:本技术 一种tr组件多级链路故障检测结构和方法 (TR assembly multistage link fault detection structure and method ) 是由 唐耀宗 丁卓富 邓金峰 张珂 贾静雯 于 2021-10-28 设计创作,主要内容包括:本发明涉及一种TR组件多级链路故障检测结构和方法,包括公共输入端连接器、第一级功率放大器、矢量调制器、第二级功率放大器、通道输出端连接器;所述第一级功率放大器和第二级功率放大器之间设置耦合功分网络,所述耦合功分网络内设置有检波电路。目的在于通过检波二级管可将耦合器隔离端口的微波能量转换为直流能量,并减少微波能量的反射,提高耦合器的隔离度;还能够将隔离端口的微波能量转换为直流电压并传输到TR组件外部,根据直流电压的高低可以得知耦合器的隔离端口微波能量大小,从而判断TR组件是否有故障并快速定位故障所在位置,提高故障排查效率。(The invention relates to a TR component multi-level link fault detection structure and a method, which comprises a common input end connector, a first-stage power amplifier, a vector modulator, a second-stage power amplifier and a channel output end connector, wherein the common input end connector is connected with a first-stage power amplifier; and a coupling power distribution network is arranged between the first-stage power amplifier and the second-stage power amplifier, and a detection circuit is arranged in the coupling power distribution network. The microwave energy at the isolation port of the coupler can be converted into direct current energy through the detection diode, the reflection of the microwave energy is reduced, and the isolation degree of the coupler is improved; the microwave energy of the isolation port can be converted into direct current voltage and transmitted to the outside of the TR component, and the microwave energy of the isolation port of the coupler can be known according to the level of the direct current voltage, so that whether the TR component has a fault or not is judged, the position of the fault is quickly positioned, and the fault troubleshooting efficiency is improved.)

1. A TR component multi-level link failure detection architecture, characterized by: the device comprises a common input end connector (1), a first-stage power amplifier, a vector modulator, a second-stage power amplifier and a channel output end connector (5); a coupling power distribution network is arranged between the first-stage power amplifier and the second-stage power amplifier, and a detection circuit is arranged in the coupling power distribution network;

the common input end connector (1) is used for transmitting input/output of signals, and the signals input from the common input end connector (1) are subjected to power amplification, power division and amplitude-phase modulation of coupled power division network signals and then output/input from the channel output end connector (5);

the coupling power dividing network is used for adjusting the power dividing ratio and the isolation degree and dividing the input signal power by adjusting the coupling coefficient and the isolation degree of the coupler;

the detection circuit is used for absorbing and converting microwave energy of each coupler in the coupling power distribution network and outputting signals so as to judge the fault position.

2. The TR module multi-link failure detection architecture of claim 1, wherein: the first stage power amplifier is a first stage TR chip (2), and the second stage power amplifier is a second stage TR chip (4); the vector modulator is a VM chip (3).

3. The TR module multi-link failure detection architecture of claim 2, wherein: the coupling power division network comprises a first-stage coupler (6) and a plurality of second-stage couplers (7), wherein the first-stage coupler (6) is arranged at a signal transmitting end of a first-stage TR chip (2); the second-stage coupler (7) is arranged at a signal receiving end of the second-stage TR chip (4).

4. The TR module multi-link failure detection architecture of claim 3, wherein: the detector circuit comprises a plurality of detector diodes (8), the detector diodes (8) correspond to couplers in a coupling power division network one by one, and the detector diodes (8) are arranged at the isolation ends of the couplers; the detection diode (8) is used for absorbing microwave energy at the isolation end of the coupler and converting the microwave energy into direct-current voltage to be output.

5. The TR module multi-link failure detection architecture of claim 4, wherein: each of the detector diodes (8) outputs a direct current voltage to the outside through a detector voltage output line (9).

6. The TR module multi-link failure detection architecture of claim 5, wherein: the first stage TR chip (2) is used for performing power amplification on an input signal, and the second stage TR chip (4) is used for performing power amplification on an output signal; the VM chip (3) is used for carrying out amplitude-phase modulation on an input signal.

7. The TR module multi-link failure detection architecture of claim 6, wherein: the signal input from the public input end connector (1) is transmitted to a signal receiving end of the first-stage TR chip (2) through a common input end microstrip (10); and the signal transmitting end of the second stage TR chip (4) transmits a signal to the channel output end connector (5) through the channel output end microstrip (11).

8. A TR module multi-link fault detection method using the TR module multi-link fault detection structure of any one of claims 1 to 6, comprising the steps of:

s1: detecting an output signal of the detection circuit, and if detecting that the direct current voltage output by a detection diode (8) corresponding to a first-stage coupler (6) is reduced, judging that a fault occurs at the transmitting end of a first-stage TR chip (2); otherwise, go to S2;

s2: changing the power of a received signal of the VM chip (3), detecting whether the direct-current voltage output by a detection diode (8) corresponding to the second-stage coupler (7) changes, and if the direct-current voltage does not change, judging that a fault occurs at the receiving end of the VM chip (3); otherwise, go to S3;

s3: the output signal of the detector circuit is detected, and if the direct current voltage output by the detector diode (8) corresponding to the second-stage coupler (7) is detected to be reduced, the fault is judged to be generated at the receiving end of the second-stage TR chip (4).

9. The TR module multi-link failure detection method of claim 8, wherein: if the amplitude of the decrease in the DC voltage output from the detection diode (8) in steps S1 and S3 is one time or more the value of the DC voltage output in the normal state, it is determined that a failure has occurred.

10. The TR module multi-link failure detection method of claim 8, wherein: in step S2, the specific method for changing the power of the signal received by the VM chip (3) is to adjust the operating voltage of the VM chip (3), so as to adjust the amplitude and phase of the signal.

Technical Field

The invention belongs to the technical field of phased array antennas, and particularly relates to a structure and a method for detecting faults of a multistage link of a TR (transmitter-receiver) component.

Background

In recent years, the fields of microwave communication, radar and guidance have been rapidly developed, and therefore higher requirements are put on the functions and performances of the loaded phased array antenna. The TR component is used as a core component in the front end of the phased array antenna, plays an important role in the field of the phased array antenna, and people have stricter and stricter requirements on various performance indexes of the TR component.

However, for the problems that the TR component is difficult to troubleshoot and low in efficiency, the important and difficult link in the work of the TR component is the fault detection and troubleshooting of the TR component, and the invention provides a novel fault detection structure of the TR component.

Disclosure of Invention

In order to overcome the problems of difficulty in troubleshooting and low efficiency of the TR component, the invention provides a novel TR component fault detection structure, the detection structure adopts a mode of combining a plurality of couplers to realize distribution and synthesis of microwave signals of the TR component, a detection diode is adopted to replace the traditional isolation resistor, and the detection diode absorbs microwave energy at the isolation end of the coupler and converts the microwave energy into a direct current signal, so that the specific fault position of the coupler is judged according to the output direct current voltage, and the purpose of quickly and accurately judging the fault is achieved.

The technical scheme adopted by the invention is as follows: a TR component multi-level link fault detection structure comprises a common input end connector, a first-stage power amplifier, a vector modulator, a second-stage power amplifier and a channel output end connector; a coupling power distribution network is arranged between the first-stage power amplifier and the second-stage power amplifier, and a detection circuit is arranged in the coupling power distribution network;

the public input end connector is used for transmitting input/output of signals, and the signals input from the public input end connector are output/input from the channel output end connector after being subjected to power amplification, power division and amplitude-phase modulation of coupled power division network signals;

the coupling power dividing network is used for adjusting the power dividing ratio and the isolation degree and dividing the input signal power by adjusting the coupling coefficient and the isolation degree of the coupler;

the detection circuit is used for absorbing and converting microwave energy of each coupler in the coupling power distribution network and outputting signals so as to judge the fault position.

Preferably, the first stage power amplifier is a first stage TR chip, and the second stage power amplifier is a second stage TR chip; the vector modulator is a VM chip.

Preferably, the coupling power division network includes a first-stage coupler and a plurality of second-stage couplers, and the first-stage coupler is arranged at a signal transmitting end of the first-stage TR chip; the second-stage coupler is arranged at a signal receiving end of the second-stage TR chip.

Preferably, the detector circuit includes a plurality of detector diodes, the detector diodes correspond to couplers in the coupling power dividing network one by one, and the detector diodes are disposed at the isolation end of the couplers; the detection diode is used for absorbing the microwave energy at the isolation end of the coupler and converting the microwave energy into direct current voltage to be output.

Preferably, each of the detector diodes outputs a dc voltage to the outside through a detection voltage output line.

Preferably, the first stage TR chip is configured to perform power amplification on an input signal, and the second stage TR chip is configured to perform power amplification on an output signal; the VM chip is used for carrying out amplitude-phase modulation on an input signal.

Preferably, the signal input from the common input end connector is microstrip-transmitted to the signal receiving end of the first stage TR chip through the common input end; and the signal transmitting end of the second-stage TR chip transmits a signal to the channel output end connector through a channel output end microstrip.

A TR component multi-level link fault detection method utilizes the above TR component multi-level link fault detection structure, and comprises the following steps:

s1: detecting an output signal of the detection circuit, and if the direct-current voltage output by the detection diode corresponding to the first-stage coupler is reduced, judging that a fault occurs at the transmitting end of the first-stage TR chip; otherwise, go to S2;

s2: changing the power of a received signal of the VM chip, detecting whether the direct-current voltage output by a detection diode corresponding to the second-stage coupler changes or not, and if the direct-current voltage does not change, judging that a fault occurs at the receiving end of the VM chip; otherwise, go to S3;

s3: and detecting an output signal of the detection circuit, and if the direct-current voltage output by the detection diode corresponding to the second-stage coupler is reduced, judging that the fault occurs at the receiving end of the second-stage TR chip.

Preferably, if the dc voltage output from the detector diode is reduced by one or more times the value of the dc voltage output in the normal state in steps S1 and S3, it is determined that a fault has occurred.

Preferably, in step S2, the specific method for changing the power of the signal received by the VM chip is to adjust the operating voltage of the VM chip, so as to adjust the amplitude and phase of the signal.

The invention has the following beneficial effects:

1) the invention provides a TR component fault detection structure which adopts a mode of combining a plurality of couplers to realize distribution and synthesis of a TR component microwave signal. The coupling coefficients of the couplers are adjusted to realize power division ratios in various forms, and compared with a power division network formed by the traditional power divider, the power division network formed by the couplers is more flexibly designed in a coupler mode;

2) in the traditional coupler, an isolation resistor is added at an isolation end, and the isolation degree is improved by absorbing microwave energy through the isolation resistor. The TR component fault detection structure provided by the invention adopts the detection diode to replace the traditional isolation resistor, so that the microwave energy of the isolation port can be converted into direct current energy, the reflection of the microwave energy is reduced, and the isolation of the coupler is improved; meanwhile, the converted direct-current voltage is transmitted to the outside of the TR component, and the microwave energy of the isolation ports of the first-stage coupler and the second-stage coupler can be known according to the level of the direct-current voltage, so that whether the TR component has a fault or not is judged, the position of the fault is quickly positioned, and the fault troubleshooting efficiency is improved;

3) therefore, the microwave energy of the isolation port is more fully utilized in the mode that the detection diode replaces the isolation resistor, and the function of flexibly detecting faults is added.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

FIG. 1 is a schematic structural diagram of the present invention.

In the figure: 1-a common input-end connector; 2-first stage TR chip; 3-VM chip; 4-second stage TR chip; 5-channel output end connector; 6-first stage coupler; 7-a second stage coupler; 8-a detector diode; 9-detection voltage output line; 10-common input microstrip; 11-channel output microstrip.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Example one

A TR component multilevel link fault detection structure comprises a common input end connector 1, a first-stage power amplifier, a vector modulator, a second-stage power amplifier and a channel output end connector 5; a coupling power distribution network is arranged between the first-stage power amplifier and the second-stage power amplifier, and a detection circuit is arranged in the coupling power distribution network;

the common input end connector 1 is used for transmitting input of signals, the signals input from the common input end connector 1 are subjected to power amplification, power division of coupled power division network signals and amplitude-phase modulation, and then are output from the channel output end connector 5, and the number of the channel output end connectors 5 can be multiple, in fig. 1 of the present invention, four output channels are taken as an example, but not limited to four;

the coupling power division network is formed by a plurality of couplers together, and the coupling coefficient and the isolation degree of the couplers are adjusted, and the impedance of each part of the couplers to radio frequency signals is changed, so that radio frequency power division ratios in various forms are realized, which are not repeated in the prior art and are used for adjusting the power division ratio and the isolation degree and dividing input signals;

the detection circuit is used for absorbing and converting microwave energy of each coupler in the coupling power distribution network and outputting signals so as to judge the fault position.

The first stage power amplifier is a first stage TR chip 2, and the second stage power amplifier is a second stage TR chip 4; the vector modulator is a VM chip 3. The first stage TR chip 2 is used for performing power amplification on an input signal, and the second stage TR chip 4 is used for performing power amplification on an output signal; the VM chip 3 is used for carrying out amplitude and phase modulation on input signals, and the power and the phase of microwave signals of transmitting signals and receiving signals of each channel can be changed by adjusting the working state of the VM chip 3.

The coupling power division network comprises a first-stage coupler 6 and a plurality of second-stage couplers 7, wherein the first-stage coupler 6 is arranged at a signal transmitting end of a first-stage TR chip 2; the second stage coupler 7 is provided at a signal receiving end of the second stage TR chip 4.

The detector circuit comprises a plurality of detector diodes 8, the detector diodes 8 correspond to couplers in a coupling power division network one by one, and the detector diodes 8 are arranged at the isolation ends of the couplers; the detection diode 8 is used for absorbing microwave energy at the isolation end of the coupler and converting the microwave energy into direct-current voltage output. The detection diode 8 is adopted to replace the traditional isolation resistor, and the purpose is as follows: the detection diode 8 can convert the microwave energy of the isolation port into direct current energy, reduce the reflection of the microwave energy and improve the isolation of the coupler; the microwave energy of the isolation port can be converted into direct current voltage and transmitted to the outside of the TR component, and the magnitude of the microwave energy at the isolation port of the first-stage coupler 6 and the isolation port of the second-stage coupler 7 can be known according to the magnitude of the direct current voltage, so that whether the TR component has a fault or not is judged, the position of the fault is quickly located, and the fault troubleshooting efficiency is improved.

Each of the detector diodes 8 outputs a direct-current voltage to the outside through a detector voltage output line 9. The received signal is the inverse process of the transmitted signal, the path of the received signal is opposite to that of the transmitted signal, and the passed devices are the same, namely, the signal can be input from the common input end connector 1, and is output from the channel output end connector 5 after passing through the first stage TR chip 2, the VM chip 3 and the second stage TR chip 4; conversely, the received signal is input from the channel output terminal connector 5, passes through the second stage TR chip 4, the VM chip 3, and the first stage TR chip 2, and is output from the common input terminal connector 1.

The signal input from the public input end connector 1 is transmitted to the signal receiving end of the first stage TR chip 2 through a common input end microstrip 10; and the signal transmitting end of the second stage TR chip 4 transmits a signal to the channel output end connector 5 through the channel output end microstrip 11.

Example two

A TR component multi-level link fault detection method utilizes the above TR component multi-level link fault detection structure, and comprises the following steps:

s1: detecting an output signal of the detection circuit, and if detecting that the direct-current voltage output by the detection diode 8 corresponding to the first-stage coupler 6 is reduced, judging that a fault occurs at the transmitting end of the first-stage TR chip 2; otherwise, go to S2;

s2: changing the power of the received signal of the VM chip 3, detecting whether the direct-current voltage output by a detection diode 8 corresponding to the second-stage coupler 7 changes, and if the direct-current voltage does not change, judging that the fault occurs at the receiving end of the VM chip 3; otherwise, go to S3;

s3: the output signal of the detector circuit is detected, and when it is detected that the dc voltage output from the detector diode 8 corresponding to the second stage coupler 7 decreases, it is determined that a fault has occurred at the receiving end of the second stage TR chip 4.

If the dc voltage output from the detector diode 8 is reduced by one or more times the value of the dc voltage output in the normal state in steps S1 and S3, it is determined that a fault has occurred.

In step S2, the specific method for changing the power of the signal received by the VM chip 3 is to adjust the operating voltage of the VM chip 3, so as to adjust the amplitude and phase of the signal.

For example, when the transmitting terminal of the first stage TR chip 2 fails, the transmitting output power of the first stage TR chip 2 decreases, the microwave energy of the isolation terminal of the first stage coupler 6 decreases, and the detection diode 8 corresponding to the isolation terminal of the first stage coupler 6 generates a dc voltage that decreases, and the external device can determine that the failure occurs at the transmitting terminal of the first stage TR chip 2 according to the condition that the dc voltage decreases (decreases to one time or more of a normal value).

When the first stage TR chip 2 detects normally, the receiving end of the second stage TR chip 4 fails, and the receiving end of the VM chip 3 is normal, the gain of the second stage TR chip 4 for receiving signals is reduced, which further causes the microwave energy at the isolation port of the second stage coupler 7 to be reduced, and further reduces the dc voltage generated by the detection diode 8 corresponding to the isolation end of the second stage coupler 7, and the external part can determine that the failure occurs at the receiving end of the second stage TR chip 4 according to the condition of the reduction of the dc voltage.

When the first stage TR chip 2 detects normally, the receiving terminal of the second stage TR chip 4 detects normally, and the receiving terminal of the VM chip 3 fails, the power of the received signal is changed by changing the operating state (operating voltage) of the receiving terminal of the VM chip 3, and whether the dc voltage generated by the detector diode 8 corresponding to the isolation terminal of the second stage coupler 7 changes is observed, and if there is no change, it is determined that the failure occurs at the receiving terminal of the VM chip 3.

So, alright according to the detection diode 8 of difference, judge that what concrete trouble is first order TR chip, second level TR chip or VM chip, also can judge which kind of chip breaks down according to the detection diode 8 of difference to reach quick accurate fault location, improve maintenance efficiency.

It should be understood by those skilled in the art that the above embodiments are only for illustrating the present invention and are not to be used as a limitation of the present invention, and that suitable changes and modifications of the above embodiments are within the scope of the claimed invention as long as they are within the spirit and scope of the present invention.

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