阅读说明：本技术 污染物陷阱 (Contaminant trap ) 是由 S·C·R·德尔克斯 D·J·M·狄莱克斯 M·W·L·H·菲特斯 P·G·M·霍伊马克斯 于 2020-03-10 设计创作，主要内容包括：一种用于辐射源的碎片减少系统的污染物陷阱,污染物陷阱包括被配置为捕获从辐射源的等离子体形成区域发射的燃料碎片的多个叶片；其中多个叶片中的至少一个叶片或每个叶片包括材料,所述材料包括高于30W m～(-1)K～(-1)的热导率。(A contaminant trap for a debris mitigation system of a radiation source, the contaminant trap comprising a plurality of vanes configured to capture fuel debris emitted from a plasma formation region of the radiation source; wherein at least one or each blade of the plurality of blades comprises a material comprising more than 30W m ‑1 K ‑1 Thermal conductivity of (2).)

1. A contaminant trap for a debris mitigation system of a radiation source, the contaminant trap comprising:

a plurality of vanes configured to capture fuel debris emitted from a plasma formation region of the radiation source;

wherein at least one or each vane of the plurality of vanes comprises a material comprising greater than 30W m^{- 1}K^-1Thermal conductivity of (2).

2. The contaminant trap of claim 1, wherein the material comprises greater than 100W m^-1K^-1Thermal conductivity of (2).

3. A contaminant trap as claimed in claim 1 or 2, wherein the material comprises less than 500W m^-1K^-1Thermal conductivity of (2).

4. A contaminant trap as claimed in any preceding claim, wherein the material comprises a transition metal.

5. A contaminant trap as claimed in any preceding claim, wherein the material comprises at least one of:

the amount of molybdenum is such that,

an alloy of molybdenum in a molten state,

a molybdenum compound,

the amount of copper is such that,

a copper alloy, and

a copper compound.

6. A contaminant trap according to any preceding claim, wherein at least one or each vane of the plurality of vanes comprises a first portion and a second portion.

7. A contaminant trap according to claim 6, wherein the first portion of the or each vane of the plurality of vanes includes a debris-receiving surface arranged to receive fuel debris emitted from the plasma-forming region of the radiation source.

8. A contaminant trap according to claim 6 or 7, wherein the first portion is arranged to protrude or extend towards the plasma formation region and/or the first portion is arranged on the second portion.

9. A contaminant trap according to any one of claims 6 to 8, wherein at least one or each vane of the plurality of vanes comprises a further material, the first portion comprises the material and/or the further material, and the second portion comprises the material.

10. The contaminant trap of claim 9, wherein the material and the other material have substantially the same coefficient of thermal expansion.

11. Contaminant trap according to claim 9 or 10, wherein the material comprises copper, a copper alloy or a copper compound and/or the further material comprises an alloy or a steel alloy.

12. A contaminant trap for a debris mitigation system of a radiation source, the contaminant trap comprising:

a plurality of vanes configured to capture fuel debris emitted from a plasma formation region of the radiation source;

wherein at least one or each blade of the plurality of blades comprises a material and/or a further material, the thermal conductivity of the material being greater than the thermal conductivity of the further material.

13. A debris mitigation system for a radiation source, the debris mitigation system comprising:

a contaminant trap according to any one of the preceding claims;

a heating arrangement for heating the plurality of blades of the contaminant trap; and

a cooling arrangement for transporting heat generated as a result of the plasma formation away from the plurality of vanes of the contaminant trap.

14. A radiation source for generating radiation, comprising:

a fuel emitter for providing a fuel target to the plasma formation region; and

the debris reduction system of claim 13.

15. A lithography system, comprising:

the radiation source of claim 14; and

a lithographic apparatus.

16. A method of manufacturing a contaminant trap for a debris mitigation system of a radiation source, the method comprising:

forming a contaminant trap comprising a plurality of vanes, wherein the plurality of vanes are arranged to capture fuel fragments emitted from a plasma formation region of the radiation source; and is

Wherein at least one or each blade of the plurality of blades comprises a material having a height above 30W m^{- 1}K^-1Thermal conductivity of (2).

17. The method of claim 16, wherein the method comprises one or more of:

providing a preformed portion comprising another material;

forming a plurality of openings or spaces in the preform portion;

arranging the material in at least one or each of the plurality of openings or spaces;

surrounding at least part of at least one or each of the plurality of openings or spaces with a surrounding portion, the surrounding portion comprising the further material; and

heating the preformed portion, the material, and/or the enclosed portion to a temperature above a melting temperature of the material.

18. The method according to claim 16 or 17, wherein the material and the further material have substantially the same coefficient of thermal expansion and/or the material comprises copper, a copper alloy or a copper compound and/or the further material comprises an alloy or a steel alloy.

Technical Field

The invention relates to a contaminant trap and associated apparatus, systems and methods.

Background

A lithographic apparatus is a machine that is configured to apply a desired pattern onto a substrate. Lithographic apparatus can be used, for example, in the manufacture of Integrated Circuits (ICs). For example, a lithographic apparatus may project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate.

The wavelength of radiation used by a lithographic apparatus to project a pattern onto a substrate determines the minimum size of features that can be formed on the substrate. Lithographic apparatus using EUV radiation (electromagnetic radiation having a wavelength in the range 4 to 20 nm) may be used to form features on a substrate that are smaller than conventional lithographic apparatus (e.g. electromagnetic radiation having a wavelength of 193nm may be used).

The lithographic system may include one or more radiation sources, a beam delivery system, and one or more lithographic apparatus. The beam delivery system may be arranged to deliver EUV radiation from the one or more radiation sources to each of the lithographic apparatuses.

EUV radiation may be generated using a plasma. For example, the plasma may be created by directing a laser beam to a fuel in a radiation source. The resulting plasma may emit EUV radiation. Some of the fuel may become fuel debris that may accumulate or be deposited on one or more components of the radiation source.

This may lead to contamination of one or more components of the radiation source, which may be difficult to clean. Contamination of one or more components of the radiation source may result in a degradation of the performance of the radiation source (e.g. the quality or power of the EUV radiation produced), which in turn may result in a degradation of the performance of the associated lithographic apparatus. Eventually, this may lead to significant down time of the lithographic apparatus, while parts of the radiation source are cleaned or replaced.

Disclosure of Invention

According to a first aspect of the present invention, there is provided a contaminant trap for a debris mitigation system of a radiation source, the contaminant trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one or each blade of the plurality of blades comprises a material comprising more than 30W m^-1K^-1Thermal conductivity of (2).

By providing at least one or each of the plurality of vanes with a vane comprising more than 30W m^-1K^-1The thermal conductivity of the material, the thermal properties of the contaminant trap (e.g. the or at least one or each of the plurality of blades) may be improved. The thermal properties of the contaminant trap may be considered to be improved relative to the thermal properties of a contaminant trap comprising a plurality of blades made of stainless steel having a thermal property of less than 30W m^-1K^-1Thermal conductivity of (2). The improved thermal properties of the contaminant trap may help to maintain the temperature of the contaminant trap below the melting temperature of the fuel fragments. Additionally or alternatively, the improved thermal properties of the blades may allow for the generation of radiation (e.g. EUV radiation) with a power above 200W, such as e.g. up to 500W, while preventing increased contamination of one or more components of the radiation source.

The material may include greater than 100W m^-1K^-1Thermal conductivity of (2).

The material may include less than 500W m^-1K^-1Thermal conductivity of (2).

The material may include a transition metal.

The material may include at least one of: molybdenum, molybdenum compounds, molybdenum alloys, copper alloys, and copper compounds.

Providing at least one of: molybdenum, molybdenum compounds, molybdenum alloys, copper alloys, and copper compounds as materials may result in improved thermal properties of contaminant traps, as described above.

At least one or each of the plurality of vanes may comprise a first portion. At least one or each of the plurality of vanes may comprise a second portion.

At least one of the plurality of vanes or the first portion of each vane may comprise a debris receiving surface. The debris-receiving surface may be arranged to receive fuel debris emitted from a plasma-forming region of the radiation source.

The first portion may be arranged to protrude or extend towards the plasma formation region. The first portion may be disposed on the second portion.

At least one or each of the plurality of blades may comprise another material. The first portion may comprise a material and/or another material. The second portion may comprise the material.

The material and the further material may have substantially the same coefficient of thermal expansion. This may result in a strong chemical and/or mechanical bond between the material and the other material. Additionally or alternatively, mechanical stresses between the material and the other material (e.g., at an interface between the material and the other material) may be reduced, such as when the plurality of blades are exposed to heat, such as in use.

The material may comprise copper, a copper alloy or a copper compound. The other material may comprise an alloy or a steel alloy.

The contaminant trap (e.g., the or each of the plurality of vanes) may comprise about 140W m^-1K^-1Or above 140W m^-1K^-1Such as, for example, the total thermal conductivity.

According to a second aspect of the present invention, there is provided a contaminant trap for a debris mitigation system of a radiation source, the contaminant trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one or each blade of the plurality of blades comprises a material and/or another material, the material having a thermal conductivity greater than a thermal conductivity of the other material.

By providing at least one or each of the plurality of blades with a material and/or another material, wherein the material may have a thermal conductivity greater than a thermal conductivity of the other material, the thermal properties of the contaminant trap (e.g. the or at least one or each of the plurality of blades) may be improved. For example, the improved thermal properties of the contaminant trap may help to maintain the temperature of the contaminant trap below the melting temperature of the fuel fragments. Additionally or alternatively, the improved thermal properties of the blades may allow for the generation of radiation (e.g. EUV radiation) with a power above 200W, such as e.g. up to 500W, while preventing increased contamination of one or more components of the radiation source.

The contaminant trap of the second aspect may comprise any feature of the contaminant trap of the first aspect.

According to a third aspect of the present invention, there is provided a contaminant trap for a debris mitigation system of a radiation source, the contaminant trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one or each of the plurality of blades comprises a first portion and a second portion.

By providing at least one or each of the plurality of blades with a first portion and a second portion, the thermal properties of the contaminant trap may be altered or adjusted (or variable or adjustable), for example by selecting the material of the first portion and/or the second portion.

At least one of the plurality of vanes or the first portion of each vane may comprise a debris receiving surface. The debris-receiving surface may be arranged to receive fuel debris emitted from a plasma-forming region of the radiation source.

The first portion may be arranged to protrude or extend towards the plasma formation region. The first portion may be disposed on the second portion.

At least one or each of the plurality of blades may comprise a material.

At least one or each of the plurality of blades may comprise another material.

The first portion may comprise a material and/or another material. The second portion may comprise the material.

The material may have a thermal conductivity greater than a thermal conductivity of another material.

The material and the further material may have substantially the same coefficient of thermal expansion.

The material comprises copper, a copper alloy or a copper compound. The other material may comprise an alloy or a steel alloy.

The contaminant trap of the third aspect may comprise any feature of the contaminant trap of the first and/or second aspects.

According to a fourth aspect of the present invention, there is provided a debris mitigation system for a radiation source, the debris mitigation system comprising: a contaminant trap according to the first, second and/or third aspects; a heating arrangement for heating the plurality of blades of the contaminant trap; and a cooling arrangement for transporting heat generated as a result of plasma formation away from the plurality of vanes of the contaminant trap.

According to a fifth aspect of the present invention, there is provided a radiation source for generating radiation, comprising: a fuel emitter for providing a fuel target to the plasma formation region; and a debris mitigation system according to the fourth aspect.

According to a sixth aspect of the invention, there is provided a lithographic system comprising: a radiation source according to the fifth aspect; and a lithographic apparatus.

According to a seventh aspect of the present invention there is provided a method of manufacturing a contaminant trap for use in a debris mitigation system of a radiation source, the method comprising: forming a contaminant trap comprising a plurality of vanes, wherein the plurality of vanes are arranged to trap fuel fragments emitted from a plasma formation region of a radiation source; and wherein at least one or each of the plurality of blades comprises a material, theThe material has a height of more than 30W m^-1K^-1Thermal conductivity of (2).

The method may include one or more of: providing a preformed portion comprising another material; forming a plurality of openings or spaces in the prefabricated part; disposing the material in at least one or each of a plurality of openings or spaces; surrounding at least one of the plurality of openings or spaces or at least part of each opening or space with a surrounding portion, the surrounding portion comprising another material; and heating the preformed portion, the material and/or the enclosed portion to a temperature above the melting temperature of the material.

The material and the further material may have substantially the same coefficient of thermal expansion.

The material may comprise copper, a copper alloy or a copper compound. The other material may comprise an alloy or a steel alloy.

According to an eighth aspect of the invention there is provided a method of manufacturing a contaminant trap for use in a debris mitigation system of a radiation source, the method comprising: forming a contaminant trap comprising a plurality of vanes, wherein the plurality of vanes are arranged to trap fuel fragments emitted from a plasma formation region of a radiation source; and wherein at least one or each blade of the plurality of blades comprises a material and/or another material, the material having a thermal conductivity greater than a thermal conductivity of the other material.

The method of the eighth aspect may comprise any feature of the method of the seventh aspect.

According to a ninth aspect of the present invention there is provided a method of manufacturing a contaminant trap for use in a debris mitigation system of a radiation source, the method comprising: forming a contaminant trap comprising a plurality of vanes, wherein the plurality of vanes are arranged to trap fuel fragments emitted from a plasma formation region of a radiation source; and wherein at least one or each of the plurality of blades comprises a first portion and a second portion.

The method of the ninth aspect may comprise any feature of the method of the seventh and/or eighth aspects.

It will be apparent to the skilled person that various aspects and features of the present invention set out above or below may be combined with various other aspects and features of the present invention.

Drawings

Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which:

FIG. 1 depicts a lithographic system for use in accordance with an embodiment of the invention, the lithographic system comprising a lithographic apparatus, a radiation source and a contaminant trap for a debris mitigation system of the radiation source;

figure 2 depicts the contaminant trap of figure 1;

fig. 3A depicts a debris reduction system for a radiation source according to an embodiment of the invention;

FIG. 3B depicts part of the debris mitigation system of FIG. 3A;

fig. 3C depicts a cross-sectional view of a portion of the debris reduction system along line a-a' in fig. 3B;

fig. 3D depicts a cross-sectional view of a portion of the debris reduction system along line B-B' in fig. 3B;

figure 4A depicts a plan view of an exemplary blade of the contaminant trap of figure 2;

FIG. 4B depicts a plan view of an exemplary blade of the contaminant trap of FIG. 2;

FIG. 4C depicts a plan view of an exemplary blade of the contaminant trap of FIG. 2;

FIG. 4D depicts a section of the blade along the line C-C' in FIG. 4A;

fig. 5 depicts a graph of the temperature of the contaminant trap as a function of the thermal load absorbed by the contaminant trap when the radiation source is switched on;

fig. 6 depicts an exemplary process flow of a manufacturing method for a contaminant trap of a debris mitigation system for a radiation source; and

fig. 7 depicts a portion of a contaminant trap, which can be manufactured using the process flow depicted in fig. 6.

Detailed Description

FIG. 1 shows a lithography system according to an embodiment of the invention, comprising a contaminant trap 16 for a debris mitigation system of a radiation source SO. The lithographic system comprises a radiation source SO and a lithographic apparatus LA. The radiation source SO is configured to generate an Extreme Ultraviolet (EUV) radiation beam B and to supply the EUV radiation beam B to the lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g. a mask), a projection system PS, and a substrate table WT configured to support a substrate W.

The illumination system IL is configured to condition the radiation beam B before it is incident on the patterning device MA. The projection system is configured to project a radiation beam B (now patterned by mask MA) onto a substrate W. The substrate W may include a previously formed pattern. In this case, the lithographic apparatus aligns the patterned radiation beam B with a pattern previously formed on the substrate W.

The source SO, the illumination system IL, and the projection system PS can all be constructed and arranged SO that they are isolated from the external environment. A gas (e.g. hydrogen) at a pressure below atmospheric pressure may be provided in the radiation source SO. A vacuum may be provided in the illumination system IL and/or the projection system PS. A relative vacuum (e.g., a small amount of gas, such as hydrogen, at a pressure much lower than atmospheric pressure) may be provided in the illumination system IL and/or the projection system PS.

The radiation source SO shown in fig. 1 is of a type that may be referred to as a Laser Produced Plasma (LPP) source. The laser 1, which may be a CO2 laser for example, is arranged to deposit energy into the fuel, such as tin (Sn) provided from a fuel emitter 3, via a laser beam 2. Although tin is referenced in the following description, any suitable fuel may be used. The fuel may for example be in liquid form and may for example be a metal or an alloy. The fuel emitter 3 may comprise a nozzle configured to direct tin along a trajectory towards the plasma formation zone 4, for example in the form of droplets. The laser beam 2 is incident on the tin at the plasma formation region 4. Depositing laser energy into the tin forms a plasma 7 at the plasma formation region 4. During ion deenergization and recombination of the plasma, radiation comprising EUV radiation is emitted from the plasma 7.

EUV radiation is collected and focused by collector 5. The collector 5 comprises, for example, a near normal incidence radiation collector 5 (sometimes more generally referred to as a normal incidence radiation collector). The collector 5 may have a multilayer structure arranged to reflect EUV radiation (e.g. EUV radiation having a desired wavelength such as 13.5 nm). The collector 5 may have an elliptical configuration with two elliptical foci. As discussed below, the first focus may be at the plasma formation region 4 and the second focus may be at the intermediate focus 6.

The laser 1 may be remote from the radiation source SO. In this case, the laser beam 2 may be delivered from the laser 1 to the radiation source SO by means of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or a beam expander and/or other optics. The laser 1 and the radiation source SO may together be considered a radiation system.

The radiation reflected by the collector 5 forms a radiation beam B. The radiation beam B is focused at point 6 to form an image of the plasma formation region 4, which acts as a virtual radiation source for the illumination system IL. The spot 6 at which the radiation beam B is focused may be referred to as an intermediate focus. The radiation source SO is arranged such that the intermediate focus 6 is located at or near an opening 8 in a surrounding structure 9 of the radiation source.

The radiation beam B passes from the radiation source SO into the illumination system IL, which is configured to condition the radiation beam B. The illumination system IL may comprise a facet field mirror device 10 and a facet pupil mirror device 11. The faceted field mirror device 10 and the faceted pupil mirror device 11 together provide the radiation beam B with a desired cross-sectional shape and a desired angular intensity distribution. The radiation beam B passes from the illumination system IL and is incident on the patterning device MA, which is held by the support structure MT. The patterning device MA reflects and patterns the radiation beam B. The illumination system IL may comprise other mirrors or devices in addition to or instead of the facet field mirror device 10 and the facet pupil mirror device 11.

After reflection from the patterning device MA, the patterned radiation beam B' enters the projection system PS. The projection system PS is configured to project a patterned beam B' of EUV radiation onto a substrate W. The projection system comprises a plurality of mirrors 13, 14 configured to project the patterned radiation beam B' onto a substrate W held by the substrate table WT. The projection system PS can apply a reduction factor to the patterned beam of radiation B' to form an image with features smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS has two mirrors 13, 14 in fig. 1, the projection system may comprise any number of mirrors (e.g. six or eight mirrors).

The substrate W may include a previously formed pattern. In this case, the lithographic apparatus LA aligns an image formed by the patterned EUV radiation beam B' with a pattern previously formed on the substrate W.

The radiation source SO shown in fig. 1 may comprise components not shown. For example, the spectral filter may be provided in the radiation source. The spectral filter may be substantially transmissive for EUV radiation but substantially blocking radiation of other wavelengths, such as infrared radiation.

The radiation source SO may comprise an on-state in which EUV radiation is generated. The radiation source SO may comprise an off-state in which no EUV radiation is generated. The radiation source is operable between an on state and an off state.

Fig. 2 shows a contaminant trap 16 of a debris mitigation system 18 for a radiation source SO according to an embodiment of the invention. The contaminant trap 16 includes a plurality of vanes 16a (two of which are shown in fig. 2). The vanes 16a may be configured to capture fuel debris emitted from the plasma formation region 4 of the radiation source SO. The vanes 16a may be configured to allow fuel debris to be removed from the vanes 16, for example, toward a fuel collector (not shown). The fuel fragments may include particulate fragments, such as, for example, tin clusters, tin particles, tin nanoparticles, and/or tin deposits, molecular and/or atomic fragments, such as, for example, tin vapor, SnH_xVapor, tin atoms, tin ions, for example when tin is used as the fuel.

The contaminant trap 16 may be arranged to surround the plasma formation region 4. The radiation source SO may comprise a chamber 20. The contaminant trap 16 may be part of the chamber 20 or included in the chamber 20. The contaminant trap 16 may provide at least part of the inner wall of the chamber 20. The chamber 20 may have a conical shape. It is to be understood that the chambers disclosed herein are not limited to having a conical shape. For example, in other embodiments, the chamber may have a cylindrical or polyhedral shape, or the like. The contaminant trap 16 may comprise a truncated cone shape. It is to be understood that the contaminant trap disclosed herein is not limited to include a truncated cone shape. For example, in other embodiments, the contaminant trap may comprise a cylindrical or frustum, or the like, shape.

The blade 16a may include a material including greater than 30W m^-1K^-1Thermal conductivity of (2). By providing the vanes with a height of more than 30W m^-1K^-1The thermal conductivity of the material, the thermal properties of the blade and/or the contaminant trap may be improved. For example, the improved thermal properties of the vanes and/or contaminant traps may help maintain the temperature of the vanes and/or contaminant traps below the melting temperature of the fuel fragments. In examples where tin is used as the fuel, the temperature of the vanes and/or contaminant traps may be maintained below 200 ℃, which is below the melting temperature of tin, which is about 230 ℃. This may prevent or reduce contamination of one or more components of the radiation source SO, such as for example the collector 5. At temperatures above the melting temperature of the fuel, fuel fragments may become liquid and/or drip or otherwise spray onto one or more components of the radiation source. The spray of liquid fuel fragments may be referred to as splash. The injection of liquid fuel fragments may be due to interaction between hydrogen radicals and liquid fuel fragments. For example, hydrogen (H)₂) Molecules may break up into hydrogen radicals due to their absorption of heat and/or EUV radiation or ion collisions. In other words, under the influence of EUV radiation, for example, hydrogen plasma may form in the radiation source SO. The hydrogen plasma may contain reactive species (H, H)⁺Etc.), which may be referred to as hydrogen radicals. The hydrogen radicals may remove (e.g., etch) fuel debris from one or more components of the radiation source, such as the trap 5. However, some hydrogen radicals (such as for example H) have been found⁺) Can penetrate the liquid fuel debris layer and form hydrogen bubbles within the liquid fuel debris layer. The bubbles may damage the surface and when one or more bubbles subsequently collapse, fuel fragments (e.g., particulate fuel fragments) may be ejectedInto the radiation source SO. Such bubbling or splashing of liquid fuel debris may be considered a major cause of contamination of one or more components of the radiation source, such as, for example, the collector 5.

Additionally or alternatively, the improved thermal properties of the blade and/or the contaminant trap may allow EUV radiation with a power above 200W (such as, for example, up to 500W) to be generated while preventing increased contamination of one or more components of the radiation source.

The material may comprise more than 50W m^-1K^-1、70W m^-1K^-1And/or 90W m^-1K^-1Thermal conductivity of (2). For example, the material may include greater than 100W m^-1K^-1、120W m^-1K^-1、140W m^-1K^-1、160W m^-1K^-1、180W m^-1K^-1、200W m^-1K^-1、220W m^-1K^-1And/or 240W m^-1K^-1Thermal conductivity of (2). The material may include less than 500W m^-1K^-1Thermal conductivity of (2). For example, the material may include less than 480W m^-1K^-1、460W m^-1K^-1、440W m^-1K^-1And/or below 420W m^-1K^-1Thermal conductivity of (2).

The material may be selected based on one or more parameters. The one or more parameters may include the corrosion resistance of the material, such as, for example, resistance or resistance to corrosion due to the fuel and/or the environment in the radiation source SO (e.g., the hydrogen environment in the radiation source SO). The one or more parameters may include the resistance of the material to thermal loading acting on the blade 16a (e.g., due to radiation in the radiation source SO, the plasma 7, and/or an increase in temperature of the blade 16), for example, to facilitate removal of fuel debris from the blade 16a, as will be described below. The one or more parameters may include the interaction of the material with hydrogen radicals, which may be present in the radiation source SO, as described above.

The material may comprise a metal or a transition metal. For example, the material may include molybdenum, molybdenum alloys or compounds, copper and copper alloys or compoundsAt least one of (1). The molybdenum may comprise about 140W m^-1K^-1Thermal conductivity of (2). The copper may comprise about 400W m^-1K^-1Thermal conductivity of (2).

Fig. 3A shows a debris mitigation system 18 for a radiation source SO. Fig. 3B illustrates a portion of the debris reduction system 18 shown in fig. 3A. Fig. 3C illustrates a cross-sectional view of a portion of debris reduction system 18 along line a-a' in fig. 3B. Fig. 3D illustrates a cross-sectional view of a portion of debris reduction system 18 along line B-B' in fig. 3B.

Referring to fig. 3A-3D, debris reduction system 18 may include contaminant trap 16. The debris trap system 18 may include a heating arrangement 22 for heating the blade 16a of the contaminant trap 16. The heating arrangement 22 may be configured to heat the blade 16a of the contaminant trap 16, for example when the radiation source is switched off. For example, the heating arrangement 22 may heat the blade 16a of the contaminant trap 16 during a maintenance operation of the radiation source SO, for example to allow removal of fuel debris from the blade 16a and/or other components of the radiation source SO. The heating arrangement 22 may be configured to heat the vanes 16a to a temperature above the melting temperature of the fuel fragments. For example, when tin is used as the fuel, the heating arrangement 22 may be configured to heat the blade to a temperature above 230 ℃, such as for example above 250 ℃, to keep the tin in a liquid state. This may facilitate removal of fuel debris from the vanes 16a of the contaminant trap 16. The heating arrangement 22 may comprise a plurality of heating elements, as will be described below. Debris reduction system 18 may include a plurality of apertures or passages 26. The aperture or channel 26 may be part of or included in the contaminant trap 16. For example, each blade 16a of the contaminant trap may include a respective hole or channel 26. Each aperture or channel 26 may be configured to receive a respective heating element.

The debris reduction system 18 may include a cooling arrangement 28 for transporting heat generated by plasma formation away from the blades 16a of the contaminant trap 16. When the radiation source SO is on, the cooling arrangement 28 may be configured to maintain the vanes 16a at a temperature below the melting temperature of the fuel fragments. For example, when tin is used as the fuel, the cooling arrangement 28 may be configured to maintain the temperature of the blade 16a below 230 ℃. The cooling arrangement 28 may include a plurality of coolant passages, as will be described below.

Debris reduction system 18 may include a gap 32 between heating arrangement 22 and cooling arrangement 28. The cooling arrangement 28 may be in thermal communication with the blade 16a via the heating arrangement 22 and the gap 32. In other words, heat may be transferred from the blade 16a to the cooling arrangement 28 via the heating arrangement 22 and the gap 32. As can best be seen from fig. 3A, the heating arrangement 22, the gap 32 and/or the cooling arrangement 28 may be arranged concentrically around the blade 16a, e.g. the contamination trap 16.

The debris reduction system 18 may be configured to direct airflow away from the blades 16 a. This may reduce the amount of fuel debris that may be deposited on the contaminant trap 16 (e.g., the blade 16 a). This in turn may increase the time period between maintenance operations of the radiation source SO, for example to remove fuel debris from the vanes 16a and/or other components of the radiation source SO. Debris mitigation system 18 may include a plurality of nozzles 34. The nozzles 34 may be arranged to direct the airflow away from the blades 16 a. For example, one or more nozzles 34 may be disposed between at least two of the vanes 16 a. The debris contamination system 18 may comprise a plurality of further channels 36 for guiding the air flow to the nozzles 34. The gas stream may comprise hydrogen. However, it is to be understood that in other embodiments, other gases may be used, such as, for example, argon or helium or a gas mixture.

Fig. 4A to 4C show plan views of an exemplary blade 16a of the contaminant trap 16. 4A-4C illustrate portions of the cooling arrangement 28 and portions of the gap 32 that may be associated with a respective blade 16 a. Each blade 16a of the contaminant trap 16 may include a first portion 38 and a second portion 40. The first portion 38 of each vane may comprise a debris receiving surface 38a arranged to receive fuel debris emitted from the plasma forming region 4 of the radiation source SO. The first portion 38 of each blade 16a may be arranged to protrude or extend towards the plasma formation region 4 (as indicated in fig. 2). The first portion 38 of each blade 16a may be disposed on a respective second portion 40.

In the example shown in FIG. 4A, the first portion 38 and the second portion 40 of each blade 16a may each include the material. The dashed lines in FIG. 4A are used to indicate the first and second portions 38, 40 of the blade 16 a. In this embodiment, the material may comprise a metal or transition metal, such as molybdenum or a compound or alloy thereof. Providing molybdenum as a material may result in improved thermal properties of the blade 16a and/or the contaminant trap 16. For example, the improved thermal properties of the vane 16a and/or the contaminant trap 16 may help to maintain the temperature of the vane 16a and/or the contaminant trap 16 below the melting temperature of the fuel fragments. In examples where tin is used as the fuel, the temperature of the blade 16a and/or contaminant trap 16 may be maintained below 200 ℃, which is below the melting temperature of tin, which is about 230 ℃. This may prevent or reduce contamination of one or more components of the radiation source SO, such as for example the collector 5, for example due to sputtering, as described above. Additionally or alternatively, the improved thermal properties of the blade and/or the contaminant trap may allow EUV radiation with a power above 200W (such as, for example, up to 500W) to be generated while preventing increased contamination of one or more components of the radiation source.

Referring to fig. 4B and 4C, each blade 16a may comprise another material. The material may include a thermal conductivity that may be greater than a thermal conductivity of another material. The further material may be selected based on at least one of the one or more parameters described above. The material and the further material may have substantially the same coefficient of thermal expansion. This may result in a strong chemical and/or mechanical bond between the material and the other material. Additionally or alternatively, mechanical stress at the interface between the material and the further material may be reduced, for example when the blade is exposed to heat, when the radiation source is switched on.

In the example shown in fig. 4B, the first portion 38 may comprise another material and the second portion 40 may comprise the material. In this embodiment, the further material may comprise an alloy or a steel alloy. For example, another material may include a stainless steel, such as, for example, AISI/SAE steel grade 316L, which may include approximately 2% manganese (Mn), 16% to 18% chromium (Cr), 8% to 13% nickel (Ni), and 2% molybdenum (Mo). The coefficient of thermal expansion of stainless steel may be about 10x10^-6℃^-1To 18x10^-6℃^-1Within the range of (1). For example, the AISI/SAE Steel grade 316L may have a coefficient of thermal expansion of about 16x10^-6℃^-1. In the example shown in fig. 4B, the material may include copper or a compound or alloy thereof, such as, for example, oxygen-free copper (OFC) or oxygen-free high thermal conductivity (OFHC) copper. The oxygen-free copper or oxygen-free high thermal conductivity copper may include 0.001% oxygen or less than 0.001% oxygen. The coefficient of thermal expansion of copper (e.g., copper alloy) may be about 16x10^-6℃^-1To 21x10^-6℃^-1Within the range of (1). The second portion 40 may have a width W in the range of 20 to 30mm, such as for example 25 mm. Providing oxygen-free copper or oxygen-free high thermal conductivity copper as the material and AISI/SAE steel grade 316L as the further material may result in a strong chemical and/or mechanical bond between the material and the further material.

A blade including copper or a compound or alloy thereof (such as, for example, oxygen-free copper or oxygen-free high thermal conductivity copper) as a material and including stainless steel (such as, for example, AISI/SAE Steel grade 316L) as another material may include about 140W m^-1K^-1E.g., total thermal conductivity. During the manufacture of the contaminant trap, for example as will be described below, the material (e.g. copper or a compound or alloy thereof) may become contaminated. This may result in a modified (e.g. reduced) thermal conductivity of the material. For example, when a material is heated above the melting temperature of the material, one or more compounds of another material (e.g., stainless steel) may diffuse into the material, thereby changing the thermal conductivity of the material. In this example, nickel atoms may diffuse into the material, which may result in the thermal conductivity of copper (or a compound or alloy thereof) being reduced to about 240W m^-1K^-1. It is to be understood that the material (e.g., copper or alloys or compounds thereof disclosed herein) is not limited to include about 240W m^-1K^-1Thermal conductivity of (2). In other embodiments, the thermal conductivity of copper or alloys or compounds thereof may be greater than 240W m^-1K^-1Such as, for example, about 400W m^-1K^-1As described above. Additionally or alternatively, it is to be understood that the contaminant traps disclosed herein are not limited to include about 140W m^-1K^-1Thermal conductivity of (2). In other embodiments, the materialMay be selected and/or arranged such that the thermal conductivity (e.g., total thermal conductivity) of the contaminant trap is greater than 30W m^-1K^-1Such as for example higher than 140W m^-1K^-1。

Experiments have shown that a blade comprising copper or an alloy or compound thereof as a material and stainless steel as another material may perform well when exposed to a hydrogen environment of a radiation source SO and/or hydrogen radicals, for example as described above. In other words, by using copper or an alloy or compound thereof as a material and including stainless steel as another material, recombination of hydrogen radicals that may occur when the hydrogen radicals interact with the blade can be improved. As described above, this may result in a reduction in the sputtering effect. It is to be appreciated that a blade comprising molybdenum as the material may perform in the same or similar manner.

The exemplary blade 16a shown in FIG. 4C is similar to the exemplary blade 16a shown in FIG. 4B. The exemplary blade 16a shown in FIG. 4C may include any of the features of the exemplary blade 16a shown in FIG. 4B. The first portion 38 may include the material and another material. The second portion 40 may comprise the material. The debris receiving surface 38a may comprise another material. In other words, the first portion 38 may be considered to comprise a material that may be at least partially surrounded by another material.

FIG. 4D illustrates a cross-sectional view of blade 16a along line C-C' in FIG. 4A. As described above, the heating arrangement 22 may include a plurality of heating elements 24 (one of which is shown in fig. 4D). Each vane 16a may include a respective hole or channel 26. The heating elements 24 may be disposed in respective holes or passages 26 of each blade 16 a. The holes or channels 26 may extend in a direction along (e.g., substantially along) a center or longitudinal axis a of the blade 16 a. The hole or passage 26 may be included or disposed in the second portion 40 of the blade 16 a.

As described above, the cooling arrangement 28 may include a plurality of coolant passages 30. The coolant channel 30 may be configured to receive a coolant and/or deliver a coolant through the cooling arrangement 28. The coolant may be provided in the form of a coolant fluid, e.g. a cooling liquid, such as e.g. water or coolant gas/cold gas or the like. In fig. 4D, a portion of the cooling arrangement 28 is shown. The coolant passages 30 may be arranged to extend in a direction perpendicular (e.g., substantially perpendicular) to the longitudinal axis a of the blade 16 a. It is to be appreciated that any of the features of the blade 16a shown in FIG. 4D may be part of or included in the blade 16a shown in any of FIGS. 4A-4C.

Fig. 5 shows a graph of the temperature of the debris mitigation system as a function of the heat load absorbed by the debris mitigation system (e.g. the contaminant trap) when the radiation source SO is switched on. The line indicated by the letter S in fig. 5 represents the temperature of the debris mitigation system in dependence of the heat load absorbed by the debris mitigation system, wherein the contaminant trap comprises a blade made of stainless steel, such as for example AISI/SAE steel grade 316L. For absorption heat loads greater than about 6,500W, the temperature of the debris reduction system (e.g., contaminant trap) rises above 230 ℃, which may be considered the melting temperature of the fuel in examples where tin is used. It can be seen in fig. 5 that the heat load absorbed by the debris mitigation system (e.g. contaminant trap) increases to about 7,300W, for example where the EUV radiation generated by the radiation source has a power of about 250W. When the temperature of the debris mitigation system (e.g. contaminant trap) is raised to 230 ℃ or higher (e.g. when tin is used as fuel), contamination of one or more components of the radiation source (such as e.g. the collector) may increase. This may be due to a splashing effect, which, as described above, may exist when the fuel melts and/or becomes liquid.

The line indicated by the letter C in fig. 5 represents the temperature of the debris mitigation system in dependence of the heat load absorbed by the debris mitigation system (e.g. the contaminant trap), wherein the blade comprises a material. In this example, the contaminant trap may include a plurality of vanes 16a, as described with respect to fig. 4C. As can be seen in fig. 5, the temperature of the debris reduction system 18 (e.g., contaminant trap 16) rises above 230 ℃ for absorption heat loads greater than about 11,000W. In other words, a debris reduction system (e.g., contaminant trap) including a blade comprising the material, such as molybdenum or copper, or a compound or alloy thereof, may absorb a greater thermal load (e.g., about 1.7 times greater than the exemplary blade shown in fig. 4C) before reaching a temperature of about 230 ℃ as compared to a debris reduction system (e.g., contaminant trap) including a blade made of stainless steel. Providing this material may result in improved thermal properties of the blade 16a and/or the contaminant trap 16. For example, the improved thermal properties of the vanes 16a and/or the contaminant trap 16 may help to maintain the temperature of the vanes below the melting temperature of the fuel fragments. In examples where tin is used as the fuel, the temperature of the blade 16a may be maintained below 200 ℃, which is below the melting temperature of tin, which is about 230 ℃. This may prevent or reduce contamination of one or more components of the radiation source SO, such as for example the collector 5, for example due to sputtering, as described above. Additionally or alternatively, the improved thermal properties of the blades 16a and/or contaminant trap may allow EUV radiation with powers above 200W (such as, for example, up to 500W) to be generated while preventing increased contamination of one or more components of the radiation source.

As described above, fuel debris deposited on the contaminant trap 16 (e.g., the vanes 16a) may be removed during maintenance operation of the radiation source SO (e.g., when the radiation source SO is turned off). The heating arrangement 22 may be operable to heat (e.g. reheat) the vanes 16a to a temperature above the melting temperature of the fuel fragments, for example above 230 ℃ when tin is used as the fuel. Fuel debris deposited on the contaminant trap 16 (e.g., the vanes 16a) may melt and/or become liquid. The vanes 16a may be configured to provide one or more flow paths for the melted fuel fragments, for example, to allow the melted fuel fragments to flow toward a fuel trap. The vanes 16a may include one or more grooves or channels (not shown) for directing molten fuel fragments toward and/or into the fuel collector. The grooves or channels may be configured to provide a flow path for the molten fuel. The grooves or channels may also be referred to as guide grooves. The fuel trap may be provided in the form of a fuel tank or the like. The fuel trap may be replaced periodically, for example when the fuel trap is full. As mentioned above, the heating arrangement 22 may comprise a plurality of heating elements 24. Each heating element 24 may be associated with a respective blade 16 a. Each heating element 24 may be configured to heat at least the associated blade 16 a. For example, when a heating element 24 fails, adjacent heating elements 24 may operate to heat the respective adjacent blade 16a and the blade 16 associated with the defective heating element 24. In examples where the contaminant trap comprises a blade made of stainless steel, the heating element may be operable to heat one or two adjacent blades, which may be associated with a respective defective heating element, for example to maintain the temperature of the blade above the melting temperature of the fuel. In examples where the contaminant trap includes a blade 16a (including the material), as described above with respect to fig. 4A-4D, the heating element 24 may be operable to heat more than two adjacent blades that may be associated with a respective defective heating element, e.g., to maintain the temperature of the blades above the melting temperature of the fuel. In other words, when the blade 16a of the contaminant trap 16 comprises this material, more than two heating elements may be allowed to become defective. This may be due to improved thermal properties, such as increased thermal conductivity, of the contaminant trap 16 (e.g., blade 16 a). For example, when at least the second portion 40 comprises another material, such as copper or a compound or alloy thereof, the heating elements may operate to heat four adjacent blades that may be associated with a respective defective heating element.

FIG. 6 illustrates an exemplary process flow of a method of manufacturing a contaminant trap for a debris mitigation system for a radiation source. The method may include forming a contaminant trap 16 including a plurality of vanes 16 a. The vanes 16a are configured to capture fuel debris emitted from the plasma formation region 4 of the radiation source SO. Each blade 16a may include a material including greater than 30W m^-1K^-1Thermal conductivity of (2).

The method may include providing a prefabricated portion of the contaminant trap 16 (step 600). Preformed portion 42 may be formed from or include another material. In this example, the other material may comprise stainless steel, such as, for example, AISI/SAE Steel grade 316L. The preformed portion 42 may be formed using a manufacturing process, such as, for example, casting. In this example, the preformed portion 42 may be provided in the shape of a hollow truncated cone. It should be appreciated that in other embodiments, the preformed portion may comprise a different shape, such as, for example, a tubular shape, a hollow frustum shape, or the like. It will also be appreciated that in other embodiments, the preformed portion is preformedMay comprise or be formed from another material comprising more than 30Wm^-1K^-1Such as, for example, molybdenum or a compound or alloy thereof.

The method may include forming a plurality of openings or spaces 44 in the preform portion 42 (step 605). Although six openings or spaces 44 are shown in step 605 of fig. 6, it is to be understood that more than six openings or spaces may be formed. The opening or space 44 may be formed using a cutting process, such as, for example, drilling, etc. The openings or spaces 44 may be arranged radially in the wall 42a of the prefabricated part. The opening or space 44 may be arranged to extend into the wall 42a of the preformed portion 42. The wall 42a may surround the plasma formation region 4, for example when the contaminant trap 16 is arranged as part of the chamber 20 of the radiation source SO. The opening or space 44 may be arranged to extend into the wall 42a in a direction parallel (e.g., substantially parallel) to the outer surface 42b and/or the inner surface 42c of the wall 42 a.

The method may include removing one or more portions of the outer surface 42b of the wall 42a, for example, such that the space or opening 44 is exposed and/or uncovered (step 610). One or more portions of the outer surface 42b of the wall 42 may be removed using a material removal process such as, for example, milling. One or more portions 42d of the outer surface 42b of the preformed portion 42 may remain.

The method may include disposing a material in each opening or space 44 (step 615). The material may be provided in one or more preformed sections (not shown). Each preformed portion may be shaped to match or complement the shape of the corresponding opening or space 44. The method may include disposing a plurality of elongated tubular portions 46 in the preformed portion 42. For example, each elongated tubular portion 46 may be disposed in a respective opening or space 44. The tubular portion 46 may be arranged to form an aperture or passage 26 and the heating element 24 may be arranged in the aperture or passage 26. The method may include surrounding at least a portion of the opening or space 44 with one or more surrounding portions 48. Each of the enclosing portions 48 may comprise another material. The enclosing portion 48 may be circumferentially disposed on the preformed portion 42. The enclosing portion 48 may be arranged to form at least part of an outer surface of the contaminant trap 16. At least another portion of the outer surface of the contaminant trap 16 may be formed by a remaining portion 42d of the outer surface 42b of the preformed portion 42. The surrounding portion 48 and/or the remaining portion 42d may be joined together, for example, using a welding process, such as, for example, electron beam welding or the like.

The method includes heating the preformed portion 42, material, and/or the enclosed portion 48 (step 620). Preformed portion 42, material, and/or enclosed portion 48 may be heated to a temperature above the melting temperature of the material. In this example, the material may include copper or a compound or alloy thereof. The melting temperature of copper may be about 1085 deg.c. Preformed portion 42, material, and/or enclosed portion 48 may be heated to a temperature greater than 1085 c, such as, for example, about 1100 c, to melt the material. The preformed portion 42 may be considered to act as a mold for the material. By using the prefabricated part as a mould for the material, the manufacture of the contaminant trap can be facilitated. Additionally or alternatively, leakage of molten material may be reduced by disposing the material in the preformed portion (e.g., the space or opening 44 thereof), for example, as compared to other processes such as, for example, casting and/or brazing. The methods disclosed herein may result in a reduction in the time, cost, and/or number of steps required to manufacture the contaminant trap.

The melted material may form a diffusion layer with another material. This may result in chemical, mechanical and/or thermal bonding between the material and another material. The depth of the diffusion layer may be varied by varying the temperature used to heat the preformed portion 42, the material, and/or the enclosed portion 48. Each opening or space 44 may be formed or shaped such that at least a portion of the first portion 38 and/or the second portion 40 of the blade 16a may be formed therein, such as after disposing and/or heating the material therein.

In step 625, the method may include surrounding the material. For example, the method may include completely surrounding the material, such as with one or more other surrounding portions 50. The method may include disposing the other enclosed portion 50 on one or more uncovered portions 52 of the material, for example, such that the material is completely enclosed by the enclosed portion 48 and/or the other enclosed portions 50. This may protect the material from corrosion, for example when a contaminant trap is used for the radiation source. For example, the interaction between the material and fuel debris in the environment of the radiation source SO may cause corrosion of the material. The other enclosing portions 50 may be arranged in respective other spaces 54. Other spaces 54 may be formed in the preformed portion 42, for example, prior to disposing the other enclosing portions 50 therein, for example, using a material removal process, such as, for example, milling or the like. Each other space 54 may be formed to surround a respective exposed or uncovered portion 52 of material. The shape of each other enclosing section 50 may match and/or complement the shape of each respective other space 54.

The method may include forming a plurality of blades 16a (step 630). The plurality of blades 16 may be formed from an inner surface 42c of wall 42a of prefabricated section 42. The plurality of blades 16a may be formed using a material removal process, such as, for example, milling or the like. For example, one or more portions of the inner surface 42c of the wall 42a may be removed, e.g., using a material removal process, to form the blade 16 a. One or more nozzles 34 may be disposed between at least two of the vanes 16 a.

An example of a contaminant trap 16 being formed is shown in step 635. The method may comprise one or more treatment (e.g. chemical treatment) steps. The one or more treatment steps may include an acid wash process and/or a passivation process. One or more treatment steps may be used throughout the method, e.g. before or after one or more steps of the method described above. The method may include depositing a protective layer, such as, for example, a tin layer, on the blade 16 a. The protective layer may be deposited on the blade 16a using an electrochemical process. The method may include removing at least a portion of the protective layer from the blade 16 a. Some protective layer may remain on the blade 16a, for example, to prevent oxidation of the blade 16a (or surfaces thereof) and/or to improve the wettability of the blade 16a to fuel debris, such as fuel droplets, during use. Before installing the contaminant trap 16 in the radiation source SO, a protective layer may be deposited and/or at least part of the protective layer may be removed.

It will be appreciated that the above method may be used to manufacture a contaminant trap 16 comprising the blade 16a shown in fig. 4B and 4C, or a combination thereof.

It is to be understood that the order of the method steps may be different. One or more method steps may be used separately or in different combinations. It is to be understood that in some embodiments, some of the above-described method steps may be used separately or in combination with other method steps.

Fig. 7 shows the portion of the contaminant trap 16 that includes the blade 16 a. The contaminant trap 16 shown in fig. 7 may be manufactured using the process flow depicted in fig. 6. In this example, each blade 16a may include the material and another material. Each blade 16 may be the same as or similar to the exemplary blade shown in FIG. 4C. The material may be considered to form the wick 56. Another material may be arranged to surround the wick 56.

It is to be understood that references to multiple features may be used interchangeably with references to the singular form of those features, such as, for example, "at least one" and/or "each". The singular forms of features (such as, for example, "at least one" or "each") may be used interchangeably.

The term "EUV radiation" may be considered to encompass electromagnetic radiation having a wavelength in the range of 4 to 20nm, for example in the range of 13 to 14 nm. EUV radiation may have a wavelength of less than 10nm, for example in the range of 4 to 10nm, such as 6.7nm or 6.8 nm.

Although fig. 1 depicts the radiation source SO as a laser produced plasma LPP source, any suitable source may be used for generating EUV radiation. For example, an EUV emitting plasma may be generated by converting a fuel (e.g., tin) into a plasma state using an electrical discharge. This type of radiation source may be referred to as a Discharge Produced Plasma (DPP) source. The discharge may be generated by a power source, which may form part of the radiation source, or may be a separate entity connected to the radiation source SO via an electrical connection.

Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications. Possible other applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, Liquid Crystal Displays (LCDs), thin film magnetic heads, etc.

While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The above description is intended to be illustrative, and not restrictive. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.