阅读说明：本技术 一种光纤忆阻单元 (Optical fiber memristor unit ) 是由 张羽 刘帅 金威 李翔 程思莹 李亚茹 张亚勋 刘志海 杨军 苑立波 于 2021-09-01 设计创作，主要内容包括：本发明提供了一种光纤忆阻单元。该光纤忆阻单元,包括单模光纤、光学相变材料薄膜和防氧化增反膜。其中,所述光学相变材料薄膜位于单模光纤端面,防氧化增反膜位于光学相变材料后。该单模光纤忆阻单元的反射率在脉冲光的加载下表现出有高低反射率的变化,并具有非易失性效应,实现非易失性全光存储。该单模光纤忆阻单元可以用作一种全光调控的光纤存储器件,具备存储速率高、能耗低以及抗电磁干扰等优点,能与光纤通信网络、光纤传感网络兼容,具有重要的应用潜力。(The invention provides an optical fiber memristor unit. The optical fiber memristor unit comprises a single-mode optical fiber, an optical phase-change material film and an anti-oxidation reflection-increasing film. The optical phase-change material film is positioned on the end face of the single-mode optical fiber, and the anti-oxidation reflection increasing film is positioned behind the optical phase-change material. The reflectivity of the single-mode fiber memristor unit shows high and low reflectivity changes under the loading of pulsed light, and the single-mode fiber memristor unit has a nonvolatile effect and realizes nonvolatile all-optical storage. The single-mode optical fiber memristor unit can be used as an all-optical-control optical fiber storage device, has the advantages of high storage rate, low energy consumption, electromagnetic interference resistance and the like, can be compatible with an optical fiber communication network and an optical fiber sensing network, and has important application potential.)

1. An optical fiber memristor unit comprises a single-mode optical fiber (1), an optical phase-change material film (2) and an anti-oxidation reflection-increasing film (3);

the end face of the single-mode optical fiber (1) is plated with an optical phase-change material film (2), and the end face of the optical phase-change material film (2) is plated with an anti-oxidation reflection increasing film (3).

After the single-mode optical fiber (1) is cut by an optical fiber cutter, the end face is kept to be high-cleanliness after being cleaned by organic solvent and arc cleaning.

The optical phase-change material film (2) is made of a chalcogenide compound, specifically a germanium-antimony-tellurium alloy (Ge)₂Sb₂Te₅) Silver indium antimony tellurium alloy (AgInSbTe), and the like.

The optical phase-change material film (2) has at least two phase states, namely a crystalline state and an amorphous state, wherein the reflectivity of the two phase states at a communication waveband is different, and the reflectivity of the crystalline state is high and the reflectivity of the amorphous state is low.

The optical phase-change material film (2) is combined with the end face of the single-mode optical fiber (1) in a radio frequency magnetron sputtering mode, and the thickness of the optical phase-change material film is 150 nm.

The material of the anti-oxidation and anti-reflection film (3) is Indium Tin Oxide (ITO) or gold film (Au), etc.

The anti-oxidation reflection-increasing film (3) prevents the optical phase-change material film (2) from being exposed in the air and oxidized, and increases the reflection of the communication wave band.

The anti-oxidation anti-reflection film (3) is combined with the optical phase change material film (2) in a radio frequency magnetron sputtering mode, and the thickness of the anti-oxidation anti-reflection film is 100 nm.

The optical fiber memristor unit is erased by pulse laser of a communication waveband with high peak power, the reflectivity of the optical fiber memristor unit is read by continuous laser of a communication waveband with low power, and the reflectivity of the optical fiber memristor unit is erased and read in an optical fiber, so that nonvolatile multilevel storage is realized.

The technical field is as follows:

the invention belongs to the technical field of optical information, and particularly relates to an optical fiber memristor unit.

Background art:

the memristor is predicted to exist by Zea begonia of California university in 1971, and is successfully developed by Hewlett packard company until 2008, and the resistance value of the memristor changes along with the quantity of the flowing charges and has the function of memorizing the quantity of the charges. In recent years, memristors have been widely studied, and nonvolatile memories based on the memristors have been commercially applied more maturely. In addition, as the memristor has the memory function similar to biological cranial nerves, biological neuron structures based on the memristor are proposed successively, and a parallel computing scheme is realized, so that a physical basis is provided for artificial general intelligence and brain-like computing.

At the present stage, most of memristors are realized by electrical means, and with the arrival of the mole limit, and the defects that electrons are easy to be interfered by electromagnetic waves, high in energy consumption and the like exist, the optical means of the memristors are realized as a necessary trend. Photon-based memristors are 1000 times faster than electrons. At present, the research of an optical memristor is in a starting stage, a metamaterial-based optical memristor is proposed by Zhouji of Qinghua university in 2014, and the light transmittance of the memristor is regulated and controlled by loading an electromagnetic field (Zhouji, Wuhongya. metamaterial-based optical memristor [ P ]. Beijing: CN104681719A,2015-06-03.), wherein the memristor is in a waveguide structure and is difficult to be compatible with the current optical system; in 2019, Shenzhen university Zhongbright and the like propose a perovskite-based multilayer light-controlled memristor (Hanminting, Yangjingzhi, Zhouyi. Zhongbright. A light-controlled memristor and a preparation method thereof [ P ]. Guandong province: CN110690345A,2020-01-14.), regulation and control are realized by utilizing the photosensitive characteristic of a resistance material, and the essence of the light-controlled memristor still takes electrons as working basic particles.

The invention provides an optical fiber memristor unit, wherein an optical phase-change material is combined with an optical fiber, phase state regulation and control of the optical phase-change material are realized by using high-power pulse laser, the reflectivity of different phase states is different, and the low-power continuous laser is used for detecting, so that the all-optical memristor function is realized. The invention combines the memristor technology with the optical fiber technology, provides the optical fiber memristor unit realized by the all-optical means, realizes erasing and writing and reading operations by photons, inherits the inherent advantages of the optical fiber, has small volume, low cost, electromagnetic interference resistance and the like, has low energy consumption and high speed compared with the memristor realized by the electrical means, can be well combined with the current optical fiber communication system and the optical fiber sensing system, and is expected to promote the realization of the all-optical neural network and the all-optical brain computation.

The invention content is as follows:

the invention aims to provide an optical fiber memristor unit, which is used for realizing nonvolatile all-optical storage.

The invention provides an optical fiber memristor unit which comprises a single-mode optical fiber (1), an optical phase-change material film (2) and an anti-oxidation reflection-increasing film (3);

the end face of the single-mode optical fiber (1) is plated with an optical phase-change material film (2), and the end face of the optical phase-change material film (2) is plated with an anti-oxidation reflection increasing film (3).

After the single-mode optical fiber (1) is cut by an optical fiber cutter, the end face is kept to be high-cleanliness after being cleaned by organic solvent and arc cleaning.

The optical phase-change material film (2) is made of a chalcogenide compound, specifically a germanium-antimony-tellurium alloy (Ge)₂Sb₂Te₅) Silver indium antimony tellurium alloy (AgInSbTe), and the like.

The optical phase-change material film (2) has at least two phase states, namely a crystalline state and an amorphous state, wherein the reflectivity of the two phase states at a communication waveband is different, and the reflectivity of the crystalline state is high and the reflectivity of the amorphous state is low.

The optical phase-change material film (2) is combined with the end face of the single-mode optical fiber (1) in a radio frequency magnetron sputtering mode, and the thickness of the optical phase-change material film is 150 nm.

The material of the anti-oxidation and anti-reflection film (3) is Indium Tin Oxide (ITO) or gold film (Au), etc.

The anti-oxidation reflection-increasing film (3) prevents the optical phase-change material film (2) from being exposed in the air and oxidized, and increases the reflection of the communication wave band.

The anti-oxidation anti-reflection film (3) is combined with the optical phase change material film (2) in a radio frequency magnetron sputtering mode, and the thickness of the anti-oxidation anti-reflection film is 100 nm.

The optical fiber memristor unit is erased by pulse laser of a communication waveband with high peak power, the reflectivity of the optical fiber memristor unit is read by continuous laser of a communication waveband with low power, and the reflectivity of the optical fiber memristor unit is erased and read in an optical fiber, so that nonvolatile multilevel storage is realized.

The invention has the beneficial effects that:

the invention combines the memristor technology with the optical fiber technology, provides the optical fiber memristor unit realized by the all-optical means, realizes erasing and writing and reading operations by photons, inherits the inherent advantages of the optical fiber, has small volume, low cost, electromagnetic interference resistance and the like, has low energy consumption and high speed compared with the memristor realized by the electrical means, can be well combined with the current optical fiber communication system and the optical fiber sensing system, and is expected to promote the realization of the all-optical neural network and the all-optical brain computation.

Description of the drawings:

fig. 1 is a schematic diagram of an optical fiber memristor unit provided by the present invention.

FIG. 2 is a diagram of a regulation optical path of an optical fiber memristor unit in the present invention.

FIG. 3 is a schematic diagram of a nonvolatile multi-level memory of a fiber memristive cell in the present disclosure.

The specific implementation mode is as follows:

for clearly illustrating the optical fiber memristive cell of the present invention, the present invention is further described with reference to the following embodiments and the accompanying drawings, but the scope of the present invention should not be limited thereby.

The invention aims to provide an optical fiber memristor unit, which is used for realizing nonvolatile all-optical storage. Referring to fig. 1, fig. 1 is a schematic diagram of an optical fiber memristive cell provided by the present invention.

The invention provides an optical fiber memristor unit which comprises a single-mode optical fiber (1), an optical phase-change material film (2) and an anti-oxidation reflection-increasing film (3);

the end face of the single-mode optical fiber (1) is plated with an optical phase-change material film (2), and the end face of the optical phase-change material film (2) is plated with an anti-oxidation reflection increasing film (3).

After the single-mode optical fiber (1) is cut by an optical fiber cutter, the end face is kept to be high-cleanliness after being cleaned by organic solvent and arc cleaning.

The optical phase-change material film (2) is made of a chalcogenide compound, specifically a germanium-antimony-tellurium alloy (Ge)₂Sb₂Te₅) Silver indium antimony tellurium alloy (AgInSbTe), and the like.

The optical phase-change material film (2) has at least two phase states, namely a crystalline state and an amorphous state, and the reflectivity of the two phase states in a communication waveband is different.

The optical phase-change material film (2) is combined with the end face of the single-mode optical fiber (1) in a radio frequency magnetron sputtering mode, and the thickness of the optical phase-change material film is 150 nm.

The material of the anti-oxidation and anti-reflection film (3) is Indium Tin Oxide (ITO) or gold film (Au), etc.

The anti-oxidation reflection-increasing film (3) prevents the optical phase-change material film (2) from being exposed in the air and oxidized, and increases the reflection of the communication wave band.

The anti-oxidation anti-reflection film (3) is combined with the optical phase change material film (2) in a radio frequency magnetron sputtering mode, and the thickness of the anti-oxidation anti-reflection film is 100 nm.

The optical fiber memristor unit is erased by pulse laser of a communication waveband with high peak power, the reflectivity of the optical fiber memristor unit is read by continuous laser of a communication waveband with low power, and the reflectivity of the optical fiber memristor unit is erased and read in an optical fiber, so that nonvolatile multilevel storage is realized.

Referring to fig. 2, fig. 2 is a regulating optical path diagram of a fiber memristive cell according to an embodiment of the present invention.

The regulation and control light path diagram of the optical fiber memristor unit comprises a pulse laser (4), a continuous laser (5), a coupler (6), a circulator (7), an optical fiber memristor unit (8), an optical filter (9), a photoelectric detector (10) and a signal processing system (11).

The pulse laser (4) emits high-power pulse laser, the high-power pulse laser enters the optical fiber memristor unit (8) through the coupler (6) and the circulator (7), and the pulse laser is reflected and isolated by the optical filter (9) after passing through the circulator (7) again.

The energy of high-power pulse laser emitted by the pulse laser (4) is concentrated, and the phase state of the optical phase change material (2) in the optical fiber memristor unit (8) can be caused to be changed, namely, erasing operation; through regulating and controlling parameters such as pulse laser peak power, pulse width, repetition frequency and the like emitted by the pulse laser (4), the multi-phase regulation and control of the optical fiber memristor unit (8) can be realized.

The continuous laser (5) emits low-power continuous laser, the low-power continuous laser is incident into the optical fiber memristor unit (8) through the coupler (6) and the circulator (7), the continuous laser is reflected and passes through the circulator (7) and the optical filter (9) again, then the continuous laser is received by the photoelectric detector (10), and an optical signal is converted into an electric signal to be output to the signal processing system (11).

The continuous laser (5) emits low-power continuous laser light so as to 'read' the reflectivity (in the state) of the optical fiber memristive unit (8), and when the optical fiber memristive unit (8) is in different phase states, the reflectivity of the optical fiber memristive unit to the light is different.

The signal processing system (11) receives the information of the laser which is read in the photoelectric detector (10), and also needs to control the pulse laser (4) and the continuous laser (5) to regulate and control the parameters of the pulse laser emitted by the pulse laser (4) and the parameters of the continuous laser emitted by the continuous laser (5).

The regulating light path diagram of the optical fiber memristor unit can realize all-optical nonvolatile multi-level storage. Referring to fig. 3, fig. 3 is a schematic diagram of a nonvolatile multi-level memory of a fiber memristive cell.

The non-volatile multi-level storage schematic diagram of the optical fiber memristor unit is a representation that the optical fiber memristor unit (8) is regulated and controlled in a time domain, and the pulse laser (4) carries out erasing operation to realize phase state change; the continuous laser (5) is used for reading operation to realize the detection of the reflectivity; the dynamic range of reflectivity change can reach 30 percent, and 8-level storage (0-level to 7-level) is realized, namely 3 bits (bit).

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.