阅读说明：本技术 基板处理方法以及基板处理装置 (Substrate processing method and substrate processing apparatus ) 是由 岩尾通矩 安田周一 于 2021-05-27 设计创作，主要内容包括：本申请提供在使用多种药液的基板处理中抑制药液间的混合的基板处理方法以及基板处理装置。本申请的基板处理方法具有：从第一喷嘴向基板喷出第一药液的工序；在喷出第一药液之后,抽吸第一喷嘴内的液体的工序；以及在第一喷嘴内的液体的抽吸停止之后,从第二喷嘴向基板喷出与第一药液不同的第二药液的工序。(The present application provides a substrate processing method and a substrate processing apparatus for inhibiting mixing of chemical solutions in substrate processing using a plurality of chemical solutions. The substrate processing method comprises: a step of ejecting a first chemical solution from a first nozzle toward a substrate; a step of sucking the liquid in the first nozzle after the first chemical liquid is discharged; and a step of ejecting a second chemical liquid different from the first chemical liquid from the second nozzle to the substrate after the suction of the liquid in the first nozzle is stopped.)

1. A method for processing a substrate, wherein,

comprising:

a step of ejecting a first chemical solution from a first nozzle toward a substrate;

a step of sucking the liquid in the first nozzle after the first chemical liquid is discharged; and

and a step of discharging a second chemical solution different from the first chemical solution from a second nozzle to the substrate after the suction of the liquid in the first nozzle is stopped.

2. The substrate processing method according to claim 1, wherein,

the substrate processing method further includes: and a step of discharging a rinse solution onto the substrate after the first chemical solution is discharged and before the second chemical solution is discharged.

3. The substrate processing method according to claim 2, wherein,

the step of sucking the liquid in the first nozzle is completed before the step of discharging the rinse liquid.

4. The substrate processing method according to claim 2 or 3, wherein,

before the step of sucking the liquid in the first nozzle, the rinse liquid is discharged from the first nozzle.

5. The substrate processing method according to claim 2 or 3, wherein,

and discharging the rinse liquid from the second nozzle during the step of sucking the liquid in the first nozzle.

6. The substrate processing method according to claim 2 or 3, wherein,

the step of discharging the rinse liquid is performed in time series by both the first nozzle and the second nozzle.

7. The substrate processing method according to claim 1 or 2, wherein,

one of the first chemical liquid and the second chemical liquid is an acidic liquid, and the other is an alkaline liquid.

8. The substrate processing method according to claim 2 or 3, wherein,

the flushing liquid is water.

9. The substrate processing method according to claim 1 or 2, wherein,

the first nozzle and the second nozzle are commonly provided in a central portion of a blocking plate disposed to face the substrate.

10. The substrate processing method according to claim 1 or 2, wherein,

the first nozzle and the second nozzle are disposed in the vicinity of each other.

11. The substrate processing method according to claim 1 or 2, wherein,

the step of sucking the liquid in the first nozzle is performed above the substrate.

12. A substrate processing apparatus, wherein,

comprising:

a first nozzle for spraying a first chemical solution onto a substrate;

a suction mechanism for sucking the liquid in the first nozzle after the first chemical liquid is discharged; and

and a second nozzle configured to discharge a second chemical different from the first chemical to the substrate after the suction of the liquid in the first nozzle is stopped.

Technical Field

The technology disclosed in the specification of the present application relates to a substrate processing method and a substrate processing apparatus. Examples of the substrate to be processed include a semiconductor wafer, a glass substrate for a liquid crystal display device, a substrate for a Flat Panel Display (FPD) such as an organic EL (electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical magnetic disk, a glass substrate for a photomask, a ceramic substrate, a substrate for a Field Emission Display (FED), a substrate for a solar cell, and the like.

Background

Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter, simply referred to as "substrate"), various processes are performed on the substrate using a substrate processing apparatus.

In substrate processing, one or more kinds of chemical solutions are discharged to a substrate through a nozzle, but in order to suppress dripping of a liquid from the nozzle, a suction operation of sucking the chemical solution in the nozzle may be performed (for example, see patent document 1).

Documents of the prior art

Patent document

Patent documents: japanese patent laid-open No. 2018-56550-

In the case where a plurality of types of liquid chemicals are discharged in time series, the liquid chemicals (or the ambient gas thereof) may be sucked later during the liquid chemical suction operation before the suction. In such a case, there is a problem that mixing (mixing) of the chemical solutions causes particles, and finally, product defects occur.

Disclosure of Invention

In view of the above-described problems, the technology disclosed in the specification of the present application is a technology for suppressing the mixing of chemical solutions in the substrate processing using a plurality of chemical solutions.

Means for solving the problems

A substrate processing method according to a first aspect of the technology disclosed in the specification of the present application includes: a step of ejecting a first chemical solution from a first nozzle toward a substrate; a step of sucking the liquid in the first nozzle after the first chemical liquid is discharged; and a step of ejecting a second chemical liquid different from the first chemical liquid from a second nozzle to the substrate after the suction of the liquid in the first nozzle is stopped.

A substrate processing method according to a second aspect of the technology disclosed in the specification of the present application, in the first aspect, further includes: and a step of discharging a rinse solution onto the substrate after the first chemical solution is discharged and before the second chemical solution is discharged.

In a substrate processing method according to a third aspect of the technology disclosed in the specification of the present application, in the second aspect, the step of sucking the liquid in the first nozzle is finished before the step of discharging the rinse liquid.

In a substrate processing method according to a fourth aspect of the technology disclosed in the specification of the present application, in the second or third aspect, the rinse liquid is discharged from the first nozzle before the step of sucking the liquid in the first nozzle.

In a substrate processing method according to a fifth aspect of the technology disclosed in the specification of the present application, in any one of the second to fourth aspects, the rinse liquid is discharged from the second nozzle during the step of sucking the liquid in the first nozzle.

In a substrate processing method according to a sixth aspect of the technology disclosed in the specification of the present application, in any one of the second to fifth aspects, the step of discharging the rinse liquid is performed in chronological order by both the first nozzle and the second nozzle.

In a seventh aspect of the technology disclosed in the specification of the present application, in any one of the first to sixth aspects, one of the first chemical solution and the second chemical solution is an acidic liquid, and the other is a basic liquid.

In a substrate processing method according to an eighth aspect of the technology disclosed in the specification of the present application, in any one of the second to sixth aspects, the rinse liquid is water.

In a substrate processing method according to a ninth aspect of the technology disclosed in the specification of the present application, in any one of the first to eighth aspects, the first nozzle and the second nozzle are provided in common in a central portion of a blocking plate disposed to face the substrate.

In a substrate processing method according to a tenth aspect of the technology disclosed in the specification of the present application, in any one of the first to ninth aspects, the first nozzle and the second nozzle are arranged in the vicinity of each other.

In a substrate processing method according to an eleventh aspect of the technology disclosed in the specification of the present application, in any one of the first to tenth aspects, the step of sucking the liquid in the first nozzle is performed above the substrate.

A substrate processing apparatus according to a twelfth aspect of the technology disclosed in the specification of the present application includes: a first nozzle for spraying a first chemical solution onto a substrate; a suction mechanism for sucking the liquid in the first nozzle after the first chemical liquid is discharged; and a second nozzle configured to discharge a second chemical different from the first chemical to the substrate after the suction of the liquid in the first nozzle is stopped.

Effects of the invention

According to the first to twelfth aspects of the technology disclosed in the specification of the present application, after the suction operation of the first chemical liquid through the first nozzle is stopped, the supply of the second chemical liquid from the second nozzle is started. Therefore, the ambient gas of the second chemical liquid can be prevented from being sucked into the first nozzle. This can sufficiently prevent the first chemical solution and the second chemical solution from being mixed in the first nozzle.

Further, objects, features, aspects, advantages, and the like of the technology disclosed in the specification of the present application will become more apparent from the detailed description and the accompanying drawings shown below.

Drawings

Fig. 1 is a plan view schematically showing an example of the structure of a substrate processing apparatus according to an embodiment.

Fig. 2 is a diagram conceptually showing an example of the configuration of the control unit illustrated in fig. 1.

Fig. 3 is a diagram schematically showing an example of the configuration of the processing unit according to the embodiment.

Fig. 4 is a cross-sectional view schematically showing an example of the structure of the opposing member.

Fig. 5 is a bottom view showing an example of the opposing member.

Fig. 6 is a diagram schematically showing an example of the configuration of the supply and suction mechanism illustrated in fig. 3 and 4.

Fig. 7 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 8 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 9 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 10 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 11 is a diagram schematically showing an example of the configuration of the processing unit according to the embodiment.

Fig. 12 is a cross-sectional view schematically showing an example of the structure of the opposing member.

Fig. 13 is a bottom view showing an example of the opposing member.

Fig. 14 is a diagram schematically showing an example of the configuration of the processing unit according to the embodiment.

Fig. 15 is a view schematically showing an example of the configuration of the supply and suction mechanism illustrated in fig. 14.

Fig. 16 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 17 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 18 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 19 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism.

Fig. 20 is a diagram schematically showing an example of the configuration of the processing unit according to the embodiment.

Fig. 21 is a view schematically showing an example of the configuration of the supply and suction mechanism illustrated in fig. 20.

Fig. 22 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

Fig. 23 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

Fig. 24 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

Fig. 25 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

Description of the reference numerals:

1 substrate processing apparatus

5 rotating chuck

8. 10, 12, 13, 21, 310, 312, 314, 316, 400, 402 nozzles

14. 15, 16, 30, 38, 39, 330, 332, 334, 336 supply and suction mechanism

17 cup

17a upper end portion

18 bulkhead

19 FFU

20 exhaust pipe

22 rotating motor

23 rotating shaft

24 rotating base

25 clamping member

26. 26A counter element

27. 27A blocking plate

28 rotating shaft

29 substrate opposing surface

31 support arm

32-shaft nozzle

33 casing

34 rotating mechanism

35 lifting mechanism

36 inert gas supply

44 connecting piping

45 liquid discharge piping

46 liquid medicine pipe

47 flushing liquid piping

48. 49 suction piping

50. 51, 52, 53, 56 valve

54 regulating valve

55. 57 suction device

80 chamber

90 control part

91 CPU

92 ROM

93 RAM

94 memory device

94P processing program

95 bus

96 input unit

97 display part

98 communication unit

108. Pipes 110, 112, 113, 121, 320, 322, 324, 326, 401, and 403

127 claw part

132 through hole

200. 203 liquid medicine

201. 202 washing liquid

300 nozzle arm

300A arm

300B shaft body

300C actuator

302 support part

Detailed Description

Hereinafter, the embodiments will be described with reference to the drawings. In the following embodiments, detailed features and the like are shown for explaining the technology, but those are examples and all the features are not necessarily essential features for enabling the implementation of the embodiments.

Note that the drawings are schematically illustrated, and the structures are omitted or simplified as appropriate in the drawings for the convenience of description. The mutual relationship between the size and the position of the structures shown in the different drawings is not necessarily described correctly, and may be changed as appropriate. In the drawings such as a plan view of a non-sectional view, hatching may be added to facilitate understanding of the contents of the embodiments.

In the following description, the same components are denoted by the same reference numerals, and the same names and functions are also provided. Therefore, detailed description thereof will be sometimes omitted in order to avoid redundancy.

In the description below, when a certain structural member is described as being "provided", "included", or "provided" or the like, unless otherwise specified, it is not an exclusive expression that excludes the presence of other structural members.

In the description below, even if ordinal numbers such as "first" and "second" are used, these terms are used for convenience of understanding the contents of the embodiments, and are not limited to the order in which the ordinal numbers are generated.

In the description below, even though terms indicating specific positions or directions such as "up", "down", "left", "right", "side", "bottom", "front", or "back" are used in some cases, these terms are used for ease of understanding the contents of the embodiments and are not related to the positions or directions in actual implementation.

In the following description, the term "upper surface of …" or "lower surface of …" or the like includes a state in which another structural member is formed on the upper surface or the lower surface of the target structural member, in addition to the upper surface or the lower surface of the target structural member. That is, for example, in the case of the description "b provided on the upper surface of a" does not prevent the other structural member "c" from being interposed between a and b.

< first embodiment >

Next, a substrate processing method and a substrate processing apparatus according to the present embodiment will be described.

< Structure of substrate processing apparatus >

Fig. 1 is a plan view schematically showing an example of the structure of a substrate processing apparatus 1 according to the present embodiment. The substrate processing apparatus 1 includes a load port LP, an indexer robot IR, a center robot CR, a control unit 90, and at least one processing unit UTa (four processing units in fig. 1).

Each of the processing units UTa is a unit for processing a substrate W (wafer). The processing unit UTa is a single-sheet type device that can be used for substrate processing.

In addition, the processing unit UTa can have a chamber 80. In this case, the processing unit UTa can perform substrate processing in a desired atmosphere by controlling the atmosphere in the chamber 80 by the controller 90.

The control unit 90 can control operations of the respective components (a rotation motor 22, a rotation mechanism 34, an elevation mechanism 35, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, a supply and suction mechanism 30, and the like of the spin chuck 5 described later) in the substrate processing apparatus 1. The accommodating rack C is an accommodating unit that accommodates the substrate W. The load port LP is a container holding mechanism for holding a plurality of containers C. The indexer robot IR can transfer the substrate W between the load port LP and the substrate mounting part PS. The center robot CR can transfer the substrate W between the substrate mounting unit PS and the processing unit UTa.

With the above configuration, the indexer robot IR, the substrate mounting section PS, and the center robot CR function as a transfer mechanism for transferring the substrates W between the processing units UTa and the load port LP.

The unprocessed substrate W is taken out of the storage rack C by the indexer robot IR. Then, the unprocessed substrate W is delivered to the center robot CR via the substrate placing unit PS.

The central robot CR carries the unprocessed substrate W into the processing unit UTa. Then, the processing unit UTa processes the substrate W.

The substrate W processed in the processing unit UTa is taken out of the processing unit UTa by the central robot CR. The processed substrate W is passed through another processing unit UTa as necessary, and then delivered to the indexer robot IR via the substrate placement unit PS. The indexer robot IR carries the processed substrate W into the storage rack C. Through the above steps, the substrate W is processed.

Fig. 2 is a diagram conceptually showing an example of the configuration of the control unit 90 illustrated in fig. 1. The control unit 90 may be constituted by a general computer having an electric circuit. Specifically, the control unit 90 includes a Central Processing Unit (CPU) 91, a Read Only Memory (ROM) 92, a Random Access Memory (RAM) 93, a storage device 94, an input unit 96, a display unit 97, a communication unit 98, and a bus 95 connecting these units to each other.

The ROM92 stores basic programs. The RAM93 is used as a work area when the CPU91 performs predetermined processing. The storage device 94 is a nonvolatile storage device such as a flash memory or a hard disk drive. The input unit 96 is configured by various switches, a touch panel, and the like, and receives an input setting instruction such as a processing recipe from an operator. The display unit 97 is configured by, for example, a liquid crystal display device, a lamp, and the like, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a Local Area Network (LAN) or the like.

A plurality of modes relating to control of each configuration in the substrate processing apparatus 1 of fig. 1 are set in advance in the storage device 94. By the CPU91 executing the processing program 94P, one of the above-described modes is selected, and each configuration is controlled in this mode. Further, the processing program 94P may be stored in a storage medium. If this storage medium is used, the processing program 94P can be installed in the control unit 90. Note that a part or all of the functions executed by the control unit 90 need not necessarily be realized by software, and may be realized by hardware such as a dedicated logic circuit.

Fig. 3 is a diagram schematically showing an example of the configuration of the processing unit UTa according to the present embodiment. The operations of the respective components in the processing unit UTa are controlled by the control unit 90. Fig. 4 is a cross-sectional view schematically showing an example of the structure of the counter member 26A.

The processing unit UTa has: a box-shaped chamber 80 having an inner space; a spin chuck 5 configured to rotate a single substrate W about a vertical rotation axis passing through a center portion of the substrate W while holding the substrate W in a horizontal posture in the chamber 80; a pipe 108 to which a nozzle 8 for ejecting a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected; a pipe 110 to which a nozzle 10 for ejecting a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected; a pipe 112 to which a nozzle 12 for ejecting a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected; a pipe 113 to which a nozzle 13 for discharging a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected; a pipe 121 to which a nozzle 21 for supplying an inert gas toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected; a supply and suction mechanism 14 for selectively supplying, for example, an alkaline chemical solution and a rinse solution to the pipe 108 and sucking the chemical solution and the rinse solution in the nozzle 8 and the pipe 108; a supply and suction mechanism 15 for selectively supplying, for example, an acidic chemical solution and a rinse solution to the pipe 110 and sucking the chemical solution and the rinse solution in the nozzle 10 and the pipe 110; a supply and suction mechanism 16 for supplying an organic solvent such as IPA (isopropyl alcohol) to the pipe 112 and sucking the organic solvent in the nozzle 12 and the pipe 112; a supply and suction mechanism 30 for supplying, for example, a hydrophobizing agent (SMT) to the pipe 113 and sucking the hydrophobizing agent in the nozzle 13 and the pipe 113; an inert gas supply source 36 for supplying an inert gas to the pipe 121; and a cylindrical cup 17 surrounding the spin chuck 5.

The nozzle 8, the nozzle 10, the nozzle 13, the nozzle 12, and the nozzle 21 are disposed in the vicinity of each other. Here, the arrangement includes arrangement in the same chamber 80, and particularly, arrangement of a plurality of nozzles above the substrate W held by the spin chuck 5 at the same time.

The acidic chemical solution is, for example, HF, dilute hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid (HF) with pure water, citric acid (citric acid), a mixed Solution (SPM) of sulfuric acid and hydrogen peroxide water, and the "chemical solution" also contains an ambient gas. The alkaline chemical solution is, for example, a mixed solution of ammonia water and hydrogen peroxide water (SC1) or dNH₄OH, tetramethylammonium hydroxide (TMAH), etc., and the "chemical liquid" also contains its ambient gas. The rinse liquid is, for example, water, but in the present embodiment, the water is any of pure water (deionized water), carbonated water, electrolytic ion water, hydrogen water, ozone water, and ammonia water having a dilution concentration (for example, 10ppm or more and 100ppm or less). In addition, "rinse" also includes its ambient gas.

The organic solvent may be, for example, methanol, ethanol, propanol, EG (ethylene glycol), hydrofluoroether, or the like, in addition to IPA. The organic solvent may be not only a monomer component but also a liquid mixed with other components. For example, the solvent may be a mixture of IPA and propanol, or a mixture of IPA and methanol. The hydrophobizing agent may be a silicon-based hydrophobizing agent or a metal-based hydrophobizing agent.

The number of nozzles illustrated in fig. 3 and 4 is not limited, and for example, a nozzle for ejecting the chemical solution may be further added.

The chamber 80 has: a box-shaped partition wall 18 for accommodating the spin chuck 5, the nozzle, and the like; an FFU (fan filter unit) 19 that conveys the clean air filtered by the filter or the like from the upper part of the partition wall 18 into the partition wall 18; the exhaust duct 20 exhausts the gas in the chamber 80 from the lower portion of the partition wall 18.

The spin chuck 5 includes a spin motor 22, a rotation shaft 23 driven by the spin motor 22, and a disk-shaped spin base 24 attached substantially horizontally to an upper end of the rotation shaft 23. A plurality of clamp members 25 are disposed on the peripheral edge portion of the upper surface of the spin base 24. The plurality of clamp members 25 are arranged at appropriate intervals in the circumferential direction of the substrate W.

The spin chuck 5 is not limited to a chuck type spin chuck, and may be a vacuum chuck (i.e., a vacuum chuck) type spin chuck that vacuum-sucks the back surface of the substrate W.

The process unit UTa has a facing member 26A facing the upper surface of the substrate W held by the spin chuck 5. Fig. 5 is a bottom view showing an example of the opposing member 26A.

The counter member 26A includes a blocking plate 27A and a rotary shaft 28 rotatable integrally with the blocking plate 27A. The blocking plate 27A has a disc-like shape having a larger diameter than the substrate W. The blocking plate 27A has a substrate-facing surface 29, which is a circular flat surface facing the entire upper surface of the substrate W, on the lower surface thereof, and an annular claw portion 127 projecting downward from the peripheral edge portion of the substrate-facing surface 29. A cylindrical through hole 132 penetrating the blocking plate 27A vertically is formed in the center of the substrate opposing surface 29.

The rotation shaft 28 is rotatable about a rotation axis a2 passing through the center of the blocking plate 27A and extending in the vertical direction. Further, the rotation axis a2 coincides with the rotation axis a1 of the substrate W. The rotating shaft 28 is cylindrical. The inner space of the rotary shaft 28 communicates with the through hole 132 of the blocking plate 27A. The rotary shaft 28 is supported to be relatively rotatable by a support arm 31 extending horizontally above the blocking plate 27A. In the present embodiment, the support arm 31 is movable at least in the vertical direction (vertical direction).

The shaft nozzle 32 extending in the vertical direction along the rotation axis a2 of the blocking plate 27A is provided inside the through hole 132. The nozzles 8, 10, 12, 13, and 21 extending in the vertical direction (vertical direction) are disposed in the housing 33 of the axial nozzle 32. The housing 33 is disposed in the through hole 132 in a state of being not in contact with the blocking plate 27A and the rotary shaft 28.

A rotation mechanism 34 including an electric motor and the like is coupled to the blocking plate 27A. The rotation mechanism 34 rotates the blocking plate 27A and the rotation shaft 28 about the rotation axis a2 with respect to the support arm 31.

An elevating mechanism 35 including an electric motor, a ball screw, or the like is coupled to the support arm 31. The elevating mechanism 35 elevates the counter member 26A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 in the vertical direction together with the support arm 31. The elevating mechanism 35 elevates the blocking plate 27A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 between an approaching position where the substrate facing surface 29 of the blocking plate 27A approaches the upper surface of the substrate W held by the spin chuck 5 and a retracted position provided above the approaching position. The elevating mechanism 35 holds the blocking plate 27A at each position between the approaching position and the retracted position.

When the elevating mechanism 35 lowers the opposing member 26A, the blocking plate 27A and the shaft nozzle 32 are received by a support portion, not shown, of the spin base 24. Then, the blocking plate 27A rotates in synchronization with the rotation of the rotary base 24 after the support arm 31 and the rotary shaft 28 are separated from each other.

As illustrated in fig. 3, the cup 17 is disposed outside the substrate W held by the spin chuck 5. The cup 17 surrounds the spin base 24. When the processing liquid is supplied to the substrate W in a state where the spin chuck 5 rotates the substrate W, the processing liquid supplied to the substrate W is thrown around the substrate W. When the processing liquid is supplied to the substrate W, the upper end 17a of the cup 17 opened upward is disposed above the spin base 24. Therefore, the processing liquid (specifically, a chemical liquid, a rinse liquid, an organic solvent, a hydrophobizing agent, or the like) discharged to the periphery of the substrate W is blocked by the cup 17. Then, the processing liquid blocked by the cup 17 is sent to a recovery device, a drain device (not shown here), or the like.

< feeding and suction means >

Fig. 6 is a diagram schematically showing an example of the configuration of the supply and suction mechanism 14 illustrated in fig. 3 and 4. The configuration of the supply and suction mechanism 15, the configuration of the supply and suction mechanism 16, and the configuration of the supply and suction mechanism 30 are the same as those illustrated in fig. 6, except for the types of the processing liquids to be supplied to the respective configurations.

As illustrated in fig. 6, the supply and suction mechanism 14 includes a connection pipe 44 connected to an upstream end of the pipe 108, a liquid discharge pipe 45 further connected to the connection pipe 44, a valve 51 provided in the liquid discharge pipe 45, a chemical liquid pipe 46 connected to an upstream side of the connection pipe 44, a valve 52 provided in the chemical liquid pipe 46, a rinse liquid pipe 47 connected to an upstream side of the connection pipe 44, a valve 53 provided in the rinse liquid pipe 47, a valve 50 provided in the pipe 108 on a downstream side of the connection pipe 44, a suction pipe 48 branched from the pipe 108 on the downstream side of the valve 50, a regulator valve 54 provided in the suction pipe 48, a suction device 55 further connected to the suction pipe 48, a suction pipe 49 further connected to the connection pipe 44, a valve 56 provided in the suction pipe 49, and a suction device 57 further connected to the suction pipe 49. The drain pipe 45 is connected to a drain device outside the apparatus. The suction device 55 and the suction device 57 may be provided in any one of the cases.

The suction device 55 is a siphon type suction device. The siphon-type suction device is here the following: the pipe (suction pipe 48) is filled with a liquid, and the liquid in the pipe 108 is sucked (discharged) by the principle of siphon. According to the siphon type suction device, energy consumption for suction can be suppressed as compared with the ejector type suction device such as a vacuum generator or an aspirator.

The suction device 57 is a jet type suction device. The ejector type suction device has a stronger suction force (a higher suction speed) than the siphon type suction device, and can suck a larger amount of liquid flow.

When the valves 52 and 50 are opened in a state where the other valves are closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the pipe 108, and the chemical liquid is discharged downward from the discharge port of the nozzle 8.

When the valves 52 and 51 are opened in a state where the other valves are closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the liquid discharge pipe 45. This enables the chemical liquid in the chemical liquid pipe 46 to be discharged (discarded).

When the valves 53 and 50 are opened in a state where the other valves are closed, the rinse liquid is supplied from the valve 53 to the pipe 108 and is discharged downward from the discharge port of the nozzle 8.

When the valves 53 and 51 are opened in a state where the other valves are closed, the rinse liquid is supplied from the valve 53 to the liquid discharge pipe 45. This enables the rinse liquid in the rinse liquid pipe 47 to be discharged (discarded).

When the regulating valve 54 is opened in the operating state of the suction device 55, the operation of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Thereby, the processing liquid (chemical liquid or rinse liquid) contained in the nozzle 8, the pipe 108, and the suction pipe 48 is introduced into the suction pipe 48. Further, the suction force of the suction device 55 is weak, and therefore, the suction speed thereof is slow.

The suction device 57 is, for example, always in an operating state. Alternatively, the suction may be started by a valve operation. When the valve 56 is opened in the operating state of the suction device 57, the operation of the suction device 57 becomes effective, and the inside of the suction pipe 49 is sucked. Thereby, the treatment liquid (chemical liquid or rinse liquid) contained in the suction pipe 49, the connection pipe 44, the pipe 108, and the nozzle 8 is introduced into the suction pipe 49. Further, the suction device 57 has a stronger suction force than the case of the suction device 55, and therefore, its suction speed is faster than the case of the suction device 55.

< action with respect to substrate processing apparatus >

Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to fig. 7 to 10. Here, fig. 7, 8, 9, and 10 are schematic diagrams for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism 14 and the supply and suction mechanism 15.

The substrate processing method of the substrate processing apparatus of the present embodiment includes: the chemical solution treatment step of carrying out the chemical solution treatment on the substrate W conveyed to the treatment unit UTa, the cleaning step of carrying out the cleaning treatment on the substrate W subjected to the chemical solution treatment, the drying step of carrying out the drying treatment on the substrate W subjected to the cleaning treatment, and the carrying out step of carrying out the substrate W subjected to the drying treatment from the treatment unit UTa. Next, the chemical liquid process included in the operation of the substrate processing apparatus will be described in more detail.

First, as illustrated in fig. 7, the valve 50 and the valve 52 illustrated in fig. 6 are opened by the control of the control unit 90, and the chemical liquid 200 is supplied through the pipe 108. In this way, the chemical liquid 200 is discharged from the discharge port of the nozzle 8 toward the substrate W.

Next, as illustrated in fig. 8, the valve 50 and the valve 53 illustrated in fig. 6 are opened by the control of the controller 90, and the rinse liquid 201 is supplied through the pipe 108. Thus, the rinse liquid 201 is discharged from the discharge port of the nozzle 8 toward the substrate W. The time for discharging the rinse liquid 201 is, for example, 10 seconds to 30 seconds.

Next, as illustrated in fig. 9, the discharge of the rinse liquid 201 is stopped, and the valve 50 and the valve 56 illustrated in fig. 6 are opened under the control of the controller 90, so that the chemical liquid or the rinse liquid contained in the suction pipe 49, the connection pipe 44, the pipe 108, and the nozzle 8 is introduced into the suction pipe 49. At this time, the chemical 200 and the ambient gas of the rinse liquid 201 in the closed space surrounded by the substrate W and the blocking plate 27A can be introduced into the suction pipe 49 through the discharge port of the nozzle 8 located above the substrate W. The time for performing the suction operation is, for example, 10 seconds to 30 seconds. The suction operation may be ended when the suction amount is measured by a sensor or the like and exceeds a threshold value, for example. Further, by opening the regulating valve 54 at once, the chemical liquid 200 or the rinse liquid 201 contained in the pipe 108 and the nozzle 8 can be introduced into the suction pipe 48.

On the other hand, as illustrated in fig. 9, the rinse liquid 202 is supplied through the pipe 110 by opening the corresponding valve under the control of the controller 90. Thus, the rinse liquid 202 is discharged from the discharge port of the nozzle 10 toward the substrate W. The rinse liquid 202 may be the same type of liquid as the rinse liquid 201 or may be a different type of liquid from the rinse liquid 201. Further, the ambient gas of the rinse liquid 202 in the closed space surrounded by the substrate W and the blocking plate 27A can be introduced into the suction pipe 49 through the discharge port of the nozzle 8 in the same manner as described above.

Next, after the suction operation of the nozzle 8 is stopped, as illustrated in fig. 10, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the pipe 110. In this way, the chemical solution 203 is discharged from the discharge port of the nozzle 10 toward the substrate W.

According to the above-described aspect, since the chemical liquid 203 starts to be supplied from the nozzle 10 after the suction operation of the chemical liquid 200 and the like through the nozzle 8 is stopped, it is possible to suppress the ambient gas of the chemical liquid 203 in the closed space surrounded by the substrate W and the blocking plate 27A from being sucked into the nozzle 8 and the pipe 108. This can sufficiently prevent the chemical solution 200 and the chemical solution 203 from mixing in the nozzle 8 and the pipe 108.

Further, since the rinse liquid can be discharged from the nozzles 8 and 10 before and during the suction operation of the nozzle 8 by discharging the rinse liquid in time series, the amount of the chemical liquid 200 remaining on the upper surface of the substrate W can be reduced, the upper surface of the substrate W can be cleaned, and the contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

The rinse liquid may be discharged from a nozzle (for example, the nozzle 12 or the nozzle 13) different from the nozzles 8 and 10. In this case, it is necessary to perform the suction operation in each nozzle, but it is desirable to start the supply of the chemical solution 203 through the nozzle 10 after the suction operation in the other nozzles is also stopped. This is because, even when the chemical solution 203 is sucked into a nozzle for discharging a rinse solution, the chemical solution is mixed when another chemical solution is discharged from the nozzle in a subsequent step.

Here, in the substrate processing method according to the present embodiment, when the supply of the chemical solution 203 through the nozzle 10 is started after the suction operation of the nozzle 8 is stopped, neither the supply of the rinse solution 201 through the nozzle 8 nor the supply of the rinse solution 202 through the nozzle 10 may be performed. However, the upper surface of the substrate W can be cleaned by supplying the rinse liquid while the suction operation of the nozzle 8 is performed, and contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

In this manner, the suction operation of the nozzle 8 is completed during the supply of the rinse solution, that is, the suction operation of the nozzle 8 is preferably completed before the supply of the rinse solution.

Further, either one of the supply of the rinse liquid 201 through the nozzle 8 and the supply of the rinse liquid 202 through the nozzle 10 may be performed.

In addition, in the case of using the hydrophobizing agent as the chemical solution, since the hydrophobizing agent cannot be mixed with the rinse liquid such as pure water, the hydrophobizing agent is immersed in the substrate W while the substrate W is immersed in the inert gas (N) while the hydrophobizing agent is sucked as the chemical solution₂) The ambient gas on the substrate W is replaced. After the suction of the hydrophobizing agent as the chemical liquid is stopped, the discharge of the other chemical liquid is started.

< second embodiment >

The substrate processing method and the substrate processing apparatus according to the present embodiment will be described. In the following description, the same components as those described in the above-described embodiments are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

< Structure of substrate processing apparatus >

Fig. 11 is a diagram schematically showing an example of the configuration of the processing unit UT according to the present embodiment. The operations of the respective components in the processing unit UT are controlled by the control unit 90. Fig. 12 is a cross-sectional view schematically showing an example of the structure of the counter member 26.

The process unit UT includes a chamber 80, a spin chuck 5, a pipe 108, a pipe 110, a pipe 112, a pipe 113, a pipe 121, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, a supply and suction mechanism 30, an inert gas supply source 36, and a cup 17.

The process unit UT has an opposing member 26 that opposes the upper surface of the substrate W held by the spin chuck 5. Fig. 13 is a bottom view showing an example of the opposing member 26.

The opposing member 26 includes a blocking plate 27 and a rotary shaft 28 that is rotatable integrally with the blocking plate 27. The blocking plate 27 has a disk-like shape having a diameter substantially equal to or larger than the diameter of the substrate W. The blocking plate 27 has a substrate-facing surface 29, which is a circular flat surface facing the entire upper surface of the substrate W, on the lower surface thereof. A cylindrical through hole 132 that vertically penetrates the blocking plate 27 is formed in the center of the substrate opposing surface 29.

The rotation shaft 28 is rotatable about a rotation axis a2 passing through the center of the blocking plate 27 and extending in the vertical direction. Further, the rotation axis a2 coincides with the rotation axis a1 of the substrate W. The rotating shaft 28 is cylindrical. The inner space of the rotary shaft 28 communicates with the through hole 132 of the blocking plate 27. The rotary shaft 28 is supported to be relatively rotatable by a support arm 31 extending horizontally above the blocking plate 27. In the present embodiment, the support arm 31 is movable at least in the vertical direction (vertical direction).

The shaft nozzle 32 extending in the vertical direction along the rotation axis a2 of the blocking plate 27 is provided inside the through hole 132. The nozzles 8, 10, 12, 13, and 21 extending in the vertical direction (vertical direction) are disposed in the housing 33 of the axial nozzle 32. The housing 33 is disposed in the through hole 132 in a state of being not in contact with the blocking plate 27 and the rotating shaft 28.

A rotation mechanism 34 including an electric motor and the like is coupled to the blocking plate 27. The rotation mechanism 34 rotates the blocking plate 27 and the rotation shaft 28 about the rotation axis a2 with respect to the support arm 31.

An elevating mechanism 35 including an electric motor, a ball screw, or the like is coupled to the support arm 31. The elevating mechanism 35 elevates the counter member 26, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 in the vertical direction together with the support arm 31. The elevating mechanism 35 elevates the blocking plate 27, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 between an approaching position where the substrate facing surface 29 of the blocking plate 27 approaches the upper surface of the substrate W held by the spin chuck 5 and a retracted position provided above the approaching position. The elevating mechanism 35 holds the blocking plate 27 at each position between the approaching position and the retracted position.

< action with respect to substrate processing apparatus >

Next, the operation of the substrate processing apparatus according to the present embodiment will be described. The substrate processing method of the substrate processing apparatus of the present embodiment includes: the method for manufacturing the substrate processing apparatus includes a step of performing chemical liquid treatment on the substrate W conveyed to the processing unit UT, a step of cleaning the substrate W subjected to the chemical liquid treatment, a step of drying the substrate W subjected to the cleaning treatment, and a step of carrying out the substrate W subjected to the drying treatment from the processing unit UT.

In the chemical solution processing described above, as in the case of the first embodiment, first, the valve 50 and the valve 52 shown in fig. 6 are opened by the control of the control unit 90, and the chemical solution 200 is supplied through the pipe 108 (however, the pipe 108 is connected to the opposing member 26). In this way, the chemical liquid 200 is discharged from the discharge port of the nozzle 8 toward the substrate W.

Subsequently, the valve 50 and the valve 53 shown in fig. 6 are opened by the control of the controller 90, and the rinse liquid 201 is supplied through the pipe 108. Thus, the rinse liquid 201 is discharged from the discharge port of the nozzle 8 toward the substrate W.

Subsequently, the valve 50 and the valve 56 shown in fig. 6 are opened under the control of the controller 90, and the chemical liquid or rinse liquid contained in the suction pipe 49, the connection pipe 44, the pipe 108, and the nozzle 8 is introduced into the suction pipe 49. At this time, the chemical 200 and the ambient gas of the rinse liquid 201 in the closed space surrounded by the substrate W and the blocking plate 27 can be introduced into the suction pipe 49 through the discharge port of the nozzle 8. Further, by opening the regulating valve 54 at once, the chemical solution or rinse solution contained in the pipe 108 and the nozzle 8 can be introduced into the suction pipe 48.

On the other hand, the rinse liquid 202 is supplied through the pipe 110 by opening the corresponding valve under the control of the controller 90. Thus, the rinse liquid 202 is discharged from the discharge port of the nozzle 10 toward the substrate W. Further, the ambient gas of the rinse liquid 202 in the closed space surrounded by the substrate W and the blocking plate 27 can be introduced into the suction pipe 49 through the discharge port of the nozzle 8 as described above.

Next, after the suction operation of the nozzle 8 is stopped, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the pipe 110. In this way, the chemical solution 203 is discharged from the discharge port of the nozzle 10 toward the substrate W.

According to the above-described aspect, since the chemical liquid 203 starts to be supplied from the nozzle 10 after the suction operation of the chemical liquid 200 and the like through the nozzle 8 is stopped, it is possible to suppress the ambient gas of the chemical liquid 203 in the closed space surrounded by the substrate W and the blocking plate 27 from being sucked into the nozzle 8 and the pipe 108. This can sufficiently prevent the chemical solution 200 and the chemical solution 203 from mixing in the nozzle 8 and the pipe 108.

Here, in the substrate processing method according to the present embodiment, when the supply of the chemical solution 203 through the nozzle 10 is started after the suction operation of the nozzle 8 is stopped, neither the supply of the rinse solution 201 through the nozzle 8 nor the supply of the rinse solution 202 through the nozzle 10 may be performed. However, the upper surface of the substrate W can be cleaned by supplying the rinse liquid while the suction operation of the nozzle 8 is performed, and contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

In this manner, the suction operation of the nozzle 8 is completed during the supply of the rinse solution, that is, the suction operation of the nozzle 8 is preferably completed before the supply of the rinse solution.

Further, either one of the supply of the rinse liquid 201 through the nozzle 8 and the supply of the rinse liquid 202 through the nozzle 10 may be performed.

< third embodiment >

The substrate processing method and the substrate processing apparatus according to the present embodiment will be described. In the following description, the same components as those described in the above-described embodiments are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

< Structure of substrate processing apparatus >

Fig. 14 is a diagram schematically showing an example of the configuration of the processing unit UTb according to the present embodiment. The operations of the respective components in the processing unit UTb are controlled by the control unit 90.

The process unit UTb has a chamber 80, a spin chuck 5, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, a supply and suction mechanism 30, a supply and suction mechanism 38, a supply and suction mechanism 39, an inert gas supply source 36, and a cup 17.

The process unit UTb has a counter member 26 that faces the upper surface of the substrate W held by the spin chuck 5.

The opposing member 26 includes a blocking plate 27 and a rotary shaft 28 that is rotatable integrally with the blocking plate 27. The blocking plate 27 has a substrate-facing surface 29, which is a circular flat surface facing the entire upper surface of the substrate W, on the lower surface thereof. A cylindrical through hole 132 that vertically penetrates the blocking plate 27 is formed in the center of the substrate opposing surface 29.

The rotation shaft 28 is rotatable about a rotation axis a2 passing through the center of the blocking plate 27 and extending in the vertical direction. The rotary shaft 28 is supported to be relatively rotatable by a support arm 31 extending horizontally above the blocking plate 27.

The shaft nozzle 32 extending in the vertical direction along the rotation axis a2 of the blocking plate 27 is provided inside the through hole 132.

A rotation mechanism 34 including an electric motor and the like is coupled to the blocking plate 27. The rotation mechanism 34 rotates the blocking plate 27 and the rotation shaft 28 about the rotation axis a2 with respect to the support arm 31.

The elevating mechanism 35 elevates the blocking plate 27 between an approaching position where the substrate facing surface 29 of the blocking plate 27 approaches the upper surface of the substrate W held by the spin chuck 5 and a retracted position provided above the approaching position. Further, in fig. 14, the blocking plate 27 is located at the retracted position among the above.

The nozzle 400 and the nozzle 402 are disposed above the substrate W so as to face the upper surface of the substrate W. The supply and suction mechanism 38 selectively supplies, for example, an alkaline chemical solution and a rinse solution to the pipe 401 and the nozzle 400, and sucks the chemical solution and the rinse solution in the pipe 401 and the nozzle 400. The supply and suction mechanism 39 selectively supplies, for example, an acidic chemical solution and a rinse solution to the pipe 403 and the nozzle 402, and sucks the chemical solution and the rinse solution in the pipe 403 and the nozzle 402. The nozzle 400 and the nozzle 402 are configured to be swingable between a processing position (a position at which the processing liquid is discharged onto the substrate W) and a retracted position (a position retracted from above the substrate W) that face the upper surface of the substrate W.

< feeding and suction means >

Fig. 15 is a diagram schematically showing an example of the configuration of the supply and suction mechanism 38 illustrated in fig. 14. The supply and suction mechanism 39 is configured similarly to the configuration illustrated in fig. 15, except for the type of the processing liquid to be supplied.

As illustrated in fig. 15, the supply and suction mechanism 38 includes a connection pipe 44 connected to an upstream end of the pipe 401, a liquid discharge pipe 45 further connected to the connection pipe 44, a valve 51 provided in the liquid discharge pipe 45, a chemical liquid pipe 46 connected to an upstream side of the connection pipe 44, a valve 52 provided in the chemical liquid pipe 46, a rinse liquid pipe 47 connected to an upstream side of the connection pipe 44, a valve 53 provided in the rinse liquid pipe 47, a valve 50 provided in the pipe 401 on a downstream side of the connection pipe 44, a suction pipe 48 branched from the pipe 401 on a downstream side of the valve 50, a regulator valve 54 provided in the suction pipe 48, a suction device 55 further connected to the suction pipe 48, a suction pipe 49 further connected to the connection pipe 44, a valve 56 provided in the suction pipe 49, and a suction device 57 further connected to the suction pipe 49. The drain pipe 45 is connected to a drain device outside the apparatus. The suction device 55 and the suction device 57 may be provided in any one of the cases.

When the valves 52 and 50 are opened in a state where the other valves are closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the pipe 401, and the chemical liquid is discharged downward from the discharge port of the nozzle 400.

When the valves 52 and 51 are opened in a state where the other valves are closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the liquid discharge pipe 45. This enables the chemical liquid in the chemical liquid pipe 46 to be discharged (discarded).

When the valve 53 and the valve 50 are opened in a state where the other valves are closed, the rinse liquid is supplied from the valve 53 to the pipe 401, and is discharged downward from the discharge port of the nozzle 400.

When the valves 53 and 51 are opened in a state where the other valves are closed, the rinse liquid is supplied from the valve 53 to the liquid discharge pipe 45. This enables the rinse liquid in the rinse liquid pipe 47 to be discharged (discarded).

When the regulating valve 54 is opened in the operating state of the suction device 55, the operation of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Thereby, the processing liquid (chemical liquid or rinse liquid) contained in the pipe 401, the nozzle 400, and the suction pipe 48 is introduced into the suction pipe 48. Further, the suction force of the suction device 55 is weak, and therefore, the suction speed thereof is slow.

The suction device 57 is, for example, always in an operating state. Alternatively, the suction may be started by a valve operation. When the valve 56 is opened in the operating state of the suction device 57, the operation of the suction device 57 becomes effective, and the inside of the suction pipe 49 is sucked. Thereby, the treatment liquid (chemical liquid or rinse liquid) contained in the suction pipe 49, the connection pipe 44, the pipe 401, and the nozzle 400 is introduced into the suction pipe 49. Further, the suction device 57 has a stronger suction force than the case of the suction device 55, and therefore, its suction speed is faster than the case of the suction device 55.

< action with respect to substrate processing apparatus >

Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to fig. 16 to 19. Here, fig. 16, 17, 18, and 19 are schematic diagrams for explaining the operation of the substrate processing apparatus, particularly the operation of the supply and suction mechanism 38 and the supply and suction mechanism 39.

The substrate processing method of the substrate processing apparatus of the present embodiment includes: the chemical solution treatment step of carrying out the chemical solution treatment on the substrate W conveyed to the treatment unit UTb, the cleaning step of carrying out the cleaning treatment on the substrate W subjected to the chemical solution treatment, the drying step of carrying out the drying treatment on the substrate W subjected to the cleaning treatment, and the carrying out step of carrying out the substrate W subjected to the drying treatment from the treatment unit UTb.

In the chemical liquid processing, as illustrated in fig. 16, the valve 50 and the valve 52 illustrated in fig. 15 are opened by the control of the control unit 90, and the chemical liquid 200 is supplied through the pipe 401. In this way, the chemical solution 200 is discharged from the discharge port of the nozzle 400 toward the substrate W.

Next, as illustrated in fig. 17, the valve 50 and the valve 53 illustrated in fig. 15 are opened by the control of the controller 90, and the rinse liquid 201 is supplied through the pipe 401. Thus, the rinse liquid 201 is discharged from the discharge port of the nozzle 400 toward the substrate W.

Next, as illustrated in fig. 18, the discharge of the rinse liquid 201 is stopped, and the valve 50 and the valve 56 illustrated in fig. 15 are opened under the control of the controller 90, so that the chemical liquid or the rinse liquid contained in the suction pipe 49, the connection pipe 44, the pipe 401, and the nozzle 400 is introduced into the suction pipe 49. At this time, the ambient gas of the chemical liquid 200 and the rinse liquid 201 in the chamber 80 can be introduced into the suction pipe 49 through the discharge port of the nozzle 400. Further, by opening the regulating valve 54 at once, the chemical liquid 200 or the rinse liquid 201 contained in the pipe 401 and the nozzle 400 can be introduced into the suction pipe 48.

On the other hand, as illustrated in fig. 18, the rinse liquid 202 is supplied through the pipe 403 by opening the corresponding valve under the control of the controller 90. In this way, the rinse liquid 202 is discharged from the discharge port of the nozzle 402 toward the substrate W. Further, the ambient gas of the rinse liquid 202 in the chamber 80 can be introduced into the suction pipe 49 through the discharge port of the nozzle 400 as described above.

Next, after the suction operation in the nozzle 400 is stopped, as illustrated in fig. 19, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the nozzle 402. In this way, the chemical solution 203 is discharged from the discharge port of the nozzle 402 toward the substrate W.

Here, in the substrate processing method according to the present embodiment, when the supply of the chemical solution 203 through the nozzle 402 is started after the suction operation of the nozzle 400 is stopped, neither the supply of the rinse solution 201 through the nozzle 400 nor the supply of the rinse solution 202 through the nozzle 402 may be performed. However, the upper surface of the substrate W can be cleaned by supplying the rinse liquid while the suction operation of the nozzle 400 is being performed, and contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

Further, either the supply of the rinse liquid 201 through the nozzle 400 or the supply of the rinse liquid 202 through the nozzle 402 may be performed.

According to the above-described aspect, since the chemical liquid 203 starts to be supplied from the nozzle 402 after the suction operation of the chemical liquid 200 and the like through the nozzle 400 is stopped, the ambient gas of the chemical liquid 203 in the chamber 80 can be prevented from being sucked into the nozzle 400 and the pipe 401. This can sufficiently prevent the chemical solution 200 and the chemical solution 203 from mixing in the nozzle 400 and the pipe 401.

< fourth embodiment >

The substrate processing method and the substrate processing apparatus according to the present embodiment will be described. In the following description, the same components as those described in the above-described embodiments are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

< Structure of substrate processing apparatus >

Fig. 20 is a diagram schematically showing an example of the configuration of the processing unit UTc according to the present embodiment. The operations of the respective components in the processing unit UTc are controlled by the control unit 90.

The processing unit UTc includes a chamber 80, a spin chuck 5, a pipe 320 to which a nozzle 310 for discharging a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected, a pipe 322 to which a nozzle 312 for discharging a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected, a pipe 324 to which a nozzle 314 for discharging a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected, a pipe 326 to which a nozzle 316 for discharging a processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected, a supply and suction mechanism 330 for selectively supplying, for example, an alkaline chemical liquid and a rinse liquid to the pipe 320 and sucking the chemical liquid and the rinse liquid in the nozzle 310 and the pipe 320, a supply and suction mechanism 330 for selectively supplying, for example, an acidic chemical liquid and a rinse liquid to the pipe 322 and sucking the chemical liquid and the rinse liquid in the nozzle 312 and the rinse liquid in the pipe 322 A supply and suction mechanism 332, a supply and suction mechanism 334 for supplying an organic solvent such as IPA (isopropyl alcohol) to the pipe 324 and sucking the organic solvent in the nozzle 314 and the pipe 324, a supply and suction mechanism 336 for supplying another chemical liquid to the pipe 326 and sucking the chemical liquid in the nozzle 316 and the pipe 326, a support 302 integrally supporting the nozzle 310, the nozzle 312, the nozzle 314, and the nozzle 316, a nozzle arm 300 having the support 302 attached to an end portion thereof, and a cup 17.

The nozzle arm 300 includes an arm 300A, a shaft 300B, and an actuator 300C. The actuator 300C adjusts the angle of the shaft body 300B around the shaft. One end of the arm 300A is fixed to the shaft body 300B, and the other end of the arm 300A is disposed apart from the shaft of the shaft body 300B. A support 302 is attached to the other end of the arm 300A. In this manner, the support portion 302 is configured to be swingable between a processing position (a position at which the processing liquid is discharged onto the substrate W) and a retracted position (a position retracted from above the substrate W) in the radial direction of the substrate W. The moving direction of the support 302 by the swing motion may have a component in the radial direction of the substrate W, and need not be strictly parallel to the radial direction of the substrate W. Here, the nozzle arm 300 is vertically movable up and down by a motor or the like not shown. In this case, the distance between the support 302 attached to the end of the nozzle arm 300 and the upper surface of the substrate W can be adjusted by raising and lowering the nozzle arm 300.

Above the substrate W, the nozzle 310, the nozzle 312, the nozzle 314, and the nozzle 316, which are integrally supported by the support portion 302, are disposed to face the upper surface of the substrate W. The supply and suction mechanism 330 selectively supplies, for example, an alkaline chemical solution and a rinse solution to the pipe 320 and the nozzle 310, and sucks the chemical solution and the rinse solution in the pipe 320 and the nozzle 310. The supply and suction mechanism 332 selectively supplies, for example, an acidic chemical solution and a rinse solution to the pipe 322 and the nozzle 312, and sucks the chemical solution and the rinse solution in the pipe 322 and the nozzle 312.

< feeding and suction means >

Fig. 21 is a diagram schematically showing an example of the configuration of the supply and suction mechanism 330 illustrated in fig. 20. The supply and suction mechanism 332, the supply and suction mechanism 334, and the supply and suction mechanism 336 are configured in the same manner as those illustrated in fig. 21, except for the type of the processing liquid to be supplied.

As illustrated in fig. 21, the supply and suction mechanism 330 includes a connection pipe 44 connected to an upstream end of the pipe 320, a liquid discharge pipe 45 further connected to the connection pipe 44, a valve 51 provided in the liquid discharge pipe 45, a chemical liquid pipe 46 connected to an upstream side of the connection pipe 44, a valve 52 provided in the chemical liquid pipe 46, a rinse liquid pipe 47 connected to an upstream side of the connection pipe 44, a valve 53 provided in the rinse liquid pipe 47, a valve 50 provided in the pipe 320 on a downstream side of the connection pipe 44, a suction pipe 48 branched from the pipe 320 on a downstream side of the valve 50, a control valve 54 provided in the suction pipe 48, a suction device 55 further connected to the suction pipe 48, a suction pipe 49 further connected to the connection pipe 44, a valve 56 provided in the suction pipe 49, and a suction device 57 further connected to the suction pipe 49. The drain pipe 45 is connected to a drain device outside the apparatus. The suction device 55 and the suction device 57 may be provided in any one of the cases.

When the valves 52 and 50 are opened in a state where the other valves are closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the pipe 320, and the chemical liquid is discharged downward from the discharge port of the nozzle 310.

When the valves 52 and 51 are opened in a state where the other valves are closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the liquid discharge pipe 45. This enables the chemical liquid in the chemical liquid pipe 46 to be discharged (discarded).

When the valves 53 and 50 are opened in a state where the other valves are closed, the rinse liquid is supplied from the valve 53 to the pipe 320, and is discharged downward from the discharge port of the nozzle 310.

When the valves 53 and 51 are opened in a state where the other valves are closed, the rinse liquid is supplied from the valve 53 to the liquid discharge pipe 45. This enables the rinse liquid in the rinse liquid pipe 47 to be discharged (discarded).

When the regulating valve 54 is opened in the operating state of the suction device 55, the operation of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Thereby, the processing liquid (chemical liquid or rinse liquid) contained in the pipe 320, the nozzle 310, and the suction pipe 48 is introduced into the suction pipe 48. Further, the suction force of the suction device 55 is weak, and therefore, the suction speed thereof is slow.

The suction device 57 is, for example, always in an operating state. Alternatively, the suction may be started by a valve operation. When the valve 56 is opened in the operating state of the suction device 57, the operation of the suction device 57 becomes effective, and the inside of the suction pipe 49 is sucked. Thereby, the treatment liquid (chemical liquid or rinse liquid) contained in the suction pipe 49, the connection pipe 44, the pipe 320, and the nozzle 310 is introduced into the suction pipe 49. Further, the suction device 57 has a stronger suction force than the case of the suction device 55, and therefore, its suction speed is faster than the case of the suction device 55.

< action with respect to substrate processing apparatus >

Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to fig. 22 to 25. Here, fig. 22, 23, 24, and 25 are schematic diagrams for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzles 310 and 312.

The substrate processing method of the substrate processing apparatus of the present embodiment includes: the chemical solution treatment step of carrying out the chemical solution treatment on the substrate W conveyed to the treatment unit UTc, the cleaning step of carrying out the cleaning treatment on the substrate W subjected to the chemical solution treatment, the drying step of carrying out the drying treatment on the substrate W subjected to the cleaning treatment, and the carrying out step of carrying out the substrate W subjected to the drying treatment from the treatment unit UTc.

In the chemical liquid processing, as illustrated in fig. 22, the valve 50 and the valve 52 illustrated in fig. 21 are opened by the control of the control unit 90, and the chemical liquid 200 is supplied through the pipe 320. In this way, the chemical solution 200 is discharged from the discharge port of the nozzle 310 toward the substrate W.

Next, as illustrated in fig. 23, the valve 50 and the valve 53 illustrated in fig. 21 are opened by the control of the controller 90, and the rinse liquid 201 is supplied through the pipe 320. Thus, the rinse liquid 201 is discharged from the discharge port of the nozzle 310 toward the substrate W.

Next, as illustrated in fig. 24, the discharge of the rinse liquid 201 is stopped, and the valve 50 and the valve 56 illustrated in fig. 21 are opened under the control of the controller 90, so that the chemical liquid or the rinse liquid contained in the suction pipe 49, the connection pipe 44, the pipe 320, and the nozzle 310 is introduced into the suction pipe 49. At this time, the chemical liquid 200 and the ambient gas of the rinse liquid 201 in the chamber 80 can be introduced into the suction pipe 49 through the discharge port of the nozzle 310. Further, by opening the regulating valve 54 at once, the chemical liquid 200 or the rinse liquid 201 contained in the pipe 320 and the nozzle 310 can be introduced into the suction pipe 48.

On the other hand, as illustrated in fig. 24, the rinse liquid 202 is supplied through the pipe 322 by opening the corresponding valve under the control of the controller 90. Thus, the rinse liquid 202 is discharged from the discharge port of the nozzle 312 toward the substrate W. Further, the ambient gas of the rinse liquid 202 in the chamber 80 can be introduced into the suction pipe 49 through the discharge port of the nozzle 310 in the same manner as described above.

Next, after the suction operation of the nozzle 310 is stopped, as illustrated in fig. 25, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the nozzle 312. In this way, the chemical solution 203 is discharged from the discharge port of the nozzle 312 toward the substrate W.

Here, in the substrate processing method according to the present embodiment, when the supply of the chemical solution 203 through the nozzle 312 is started after the suction operation of the nozzle 310 is stopped, neither the supply of the rinse solution 201 through the nozzle 310 nor the supply of the rinse solution 202 through the nozzle 312 may be performed. However, the upper surface of the substrate W can be cleaned by supplying the rinse liquid while the suction operation of the nozzle 310 is performed, and contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

Further, either the supply of the rinse liquid 201 through the nozzle 310 or the supply of the rinse liquid 202 through the nozzle 312 may be performed.

According to the above aspect, since the chemical liquid 203 starts to be supplied from the nozzle 312 located in the vicinity of the nozzle 310 after the suction operation of the chemical liquid 200 and the like through the nozzle 310 is stopped, the ambient gas of the chemical liquid 203 in the chamber 80 can be prevented from being sucked into the nozzle 310 and the pipe 320. This can sufficiently prevent the chemical solution 200 and the chemical solution 203 from mixing in the nozzle 310 and the pipe 320.

< effects produced by the above-described embodiments >

Next, an example of the effects produced by the above-described embodiments is shown. In the following description, although the effect is described based on the specific configuration illustrated in the above-described embodiment, the present invention may be replaced with other specific configurations illustrated in the present specification within a range where the same effect is produced.

In addition, the permutation may also be performed across multiple embodiments. That is, the same effects may be produced by combining the respective configurations described in the different embodiments.

According to the above-described embodiments, in the substrate processing method, the first chemical liquid is discharged from the first nozzle toward the substrate W. Here, the first nozzle is a nozzle corresponding to any one of the nozzles 8, 310, 400, and the like (hereinafter, for convenience of description, any one of them may be referred to as corresponding). The first chemical liquid is a chemical liquid corresponding to, for example, the chemical liquid 200. After the chemical liquid 200 is discharged, the liquid (e.g., the chemical liquid 200, the rinse liquid 201, etc.) in the nozzle 8 is suctioned. After the suction of the liquid in the nozzle 8 is stopped, a second chemical solution different from the chemical solution 200 is discharged from the second nozzle to the substrate W. Here, the second nozzle is a nozzle corresponding to any one of the nozzles 10, 312, 402, and the like (hereinafter, for convenience of description, any one of them may be referred to as corresponding). The second chemical liquid is a chemical liquid corresponding to, for example, the chemical liquid 203.

With this configuration, after the operation of sucking the chemical liquid 200 or the like through the nozzle 8 is stopped, the chemical liquid 203 starts to be supplied from the nozzle 10. Therefore, the ambient gas of the chemical solution 203 can be prevented from being sucked into the nozzle 8. This can sufficiently prevent the chemical solution 200 and the chemical solution 203 from being mixed in the nozzle 8. As a result, it is not necessary to dispose the nozzles separately from each other in advance in order to avoid the mixing of the chemical solutions discharged from the plurality of nozzles. That is, the degree of freedom in nozzle arrangement can be improved.

In addition, the same effects can be produced also in the case where another structure exemplified in the present specification is appropriately added to the above-described structure, that is, in the case where another structure in the present specification which is not mentioned as the above-described structure is appropriately added.

In addition, the order of performing the respective processes may be changed without particular limitation.

In addition, according to the above-described embodiment, in the substrate processing method, the rinse solution 201 or the rinse solution 202 is discharged onto the substrate W after the discharge of the chemical solution 200 and before the discharge of the chemical solution 203. With such a configuration, the upper surface of the substrate W can be cleaned by supplying the rinse liquid 201 or 202 during the suction operation of the nozzle 8, and contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

Further, according to the above-described embodiment, the step of sucking the liquid in the nozzle 8 is finished before the step of discharging the rinse liquid 201 or 202. With this configuration, the step of sucking the liquid in the nozzle 8 can be completed while the liquid film of the rinse liquid is formed on the upper surface of the substrate W. This can suppress contamination of the substrate W.

Further, according to the above-described embodiment, the rinse liquid 201 is discharged from the nozzle 8 before the step of sucking the liquid in the nozzle 8. With this configuration, the chemical liquid 200 remaining after the cleaning of the upper surface of the substrate W and the inside of the nozzle 8 can be sucked, and therefore, the amount of the remaining chemical liquid 200 can be reduced.

Further, according to the above-described embodiment, the rinse liquid 202 is discharged from the nozzle 10 during the step of suctioning the liquid in the nozzle 8. According to such a configuration, the upper surface of the substrate W can be cleaned by supplying the rinse liquid 202 through the nozzle 10 while the suction operation of the nozzle 8 is performed, and contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

In addition, according to the above-described embodiment, the step of discharging the rinse liquid is performed in chronological order by both the nozzle 8 and the nozzle 10. According to such a configuration, since the rinse liquid can be discharged before and during the suction operation by the nozzle 8, the upper surface of the substrate W can be cleaned while reducing the amount of the remaining chemical liquid 200, and the contamination of the substrate W can be suppressed by forming the liquid film of the rinse liquid on the upper surface of the substrate W.

In addition, according to the above-described embodiment, one of the chemical liquid 200 and the chemical liquid 203 is an acidic liquid, and the other is a basic liquid. With such a configuration, mixing (contact) between the chemical solutions, that is, contact inhibition can be suppressed.

Further, according to the above-described embodiment, the rinse liquid 201 or 202 is water (DIW). With this configuration, the inside of the nozzle and the upper surface of the substrate W can be cleaned efficiently.

In addition, according to the above-described embodiment, the nozzle 8 and the nozzle 10 are provided in common in the center portion of the blocking plate 27 (or the blocking plate 27A) disposed to face the substrate W. According to such a configuration, the ambient gas of the chemical solution 200 and the ambient gas of the chemical solution 203 in the (closed) space between the substrate W and the blocking plate 27 (or the blocking plate 27A) are easily sucked through the discharge port of the nozzle 8, but since the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 and the like through the nozzle 8 is stopped, the ambient gas of the chemical solution 203 can be prevented from being sucked into the nozzle 8.

Further, according to the above-described embodiment, the nozzle 8 and the nozzle 10 (or the nozzle 310 and the nozzle 312) are arranged in the vicinity of each other. According to such a configuration, the ambient gas of the chemical liquid 200 and the ambient gas of the chemical liquid 203 discharged through the nozzle 10 located in the vicinity are easily sucked through the discharge port of the nozzle 8, but since the chemical liquid 203 starts to be supplied from the nozzle 10 after the suction operation of the chemical liquid 200 and the like through the nozzle 8 is stopped, the ambient gas of the chemical liquid 203 can be prevented from being sucked into the nozzle 8.

According to the above-described embodiment, the substrate processing apparatus includes the nozzle 8, the supply and suction mechanism 14, and the nozzle 10. The nozzle 8 discharges the chemical solution 200 toward the substrate W. After the chemical liquid 200 is discharged, the supply and suction mechanism 14 sucks the liquid in the nozzle 8. After the suction of the liquid in the nozzle 8 is stopped, the nozzle 10 discharges a chemical solution 203 different from the chemical solution 200 toward the substrate W.

With this configuration, after the operation of sucking the chemical liquid 200 or the like through the nozzle 8 is stopped, the chemical liquid 203 starts to be supplied from the nozzle 10. Therefore, the ambient gas of the chemical solution 203 can be prevented from being sucked into the nozzle 8. This can sufficiently prevent the chemical solution 200 and the chemical solution 203 from being mixed in the nozzle 8. As a result, it is not necessary to dispose the nozzles separately from each other in advance in order to avoid the mixing of the chemical solutions discharged from the plurality of nozzles. That is, the degree of freedom in nozzle arrangement can be improved.

In addition, the same effects can be produced also in the case where another structure exemplified in the present specification is appropriately added to the above-described structure, that is, in the case where another structure in the present specification which is not mentioned as the above-described structure is appropriately added.

< modification of the above-described embodiment >

In the embodiments described above, there are cases where the dimensions, shapes, relative arrangement, conditions for implementation, and the like of the respective structural members are described, but these are only examples in all aspects and are not limited to the contents described in the present specification.

Therefore, countless modifications and equivalents not illustrated can be assumed within the technical scope disclosed in the specification of the present application. For example, the case where at least one structural member is deformed, added, or omitted is included, and the case where at least one structural member in at least one embodiment is extracted and combined with the structural members in other embodiments is also included.

In the above-described embodiments, when a material name or the like is described without being particularly specified, it is assumed that other additives, for example, an alloy or the like, are contained in the material as long as no contradiction occurs.

In addition, the structural member described as having "one" in the above-described embodiments may have "one or more" as long as no contradiction occurs.

Each structural member in the above-described embodiments is a conceptual unit, and includes a case where one structural member is configured by a plurality of structures, a case where one structural member corresponds to a part of a certain structure, and a case where a plurality of structural members are provided in one structure, within the scope of the technology disclosed in the present specification.

In addition, the structural members in the above-described embodiments include structures having other structures or shapes as long as they perform the same function.