阅读说明：本技术 一种4g lte宽带全向天线及其带宽调节方法 (4G LTE broadband omnidirectional antenna and bandwidth adjusting method thereof ) 是由 董元旦 文思超 王崭 许艺珍 于 2021-08-05 设计创作，主要内容包括：本发明提供一种4G LTE宽带全向天线及其带宽调节方法,包括：金属地板、介质基板、馈电SMA,介质基板远离金属地板一侧表面设置有与馈电SMA中心探针同心焊接的圆形金属贴片,沿圆形贴片的周向布置上弧形微带线；介质基板另一侧表面设有环形金属贴片,环形金属贴片与馈电SMA的中心探针同心设置,沿环形金属贴片周向布置有下弧形微带线,下弧形微带线与环形金属贴片之间通过连接枝节连接,且下弧形微带线间隔介质基板与上弧形微带线的位置相对应。多个等效电感和等效电容分别构成两个谐振点,两个谐振频点的谐振频率可以分别单独调谐,通过调整天线物理结构参数可以控制谐振频率的大小,使两个谐振频率分别位于通带的低端和高端,从而覆盖目标带宽。(The invention provides a 4G LTE broadband omnidirectional antenna and a bandwidth adjusting method thereof, wherein the method comprises the following steps: the surface of one side of the dielectric substrate, which is far away from the metal floor, is provided with a circular metal patch which is concentrically welded with a central probe of the feed SMA, and an upper arc microstrip line is arranged along the circumferential direction of the circular patch; the other side surface of the dielectric substrate is provided with an annular metal patch which is concentrically arranged with a central probe of the feed SMA, a lower arc microstrip line is arranged along the circumferential direction of the annular metal patch, the lower arc microstrip line is connected with the annular metal patch through a connecting branch, and the position of the lower arc microstrip line, which is spaced from the dielectric substrate, corresponds to the position of the upper arc microstrip line. A plurality of equivalent inductances and equivalent capacitances respectively form two resonance points, the resonance frequencies of the two resonance points can be independently tuned respectively, and the size of the resonance frequency can be controlled by adjusting the physical structure parameters of the antenna, so that the two resonance frequencies are respectively positioned at the low end and the high end of the passband, and the target bandwidth is covered.)

1. A4G LTE wideband omnidirectional antenna, comprising: a metal floor, a dielectric substrate, a feed SMA,

the metal floor and the dielectric substrate are supported and connected through metal columns,

the central probe of the feed SMA penetrates through the dielectric substrate, a circular metal patch which is concentrically welded with the central probe of the feed SMA is arranged on the surface of one side of the dielectric substrate, which is far away from the metal floor, and an upper arc microstrip line is arranged along the circumferential direction of the circular patch;

an annular metal patch is arranged on the other side surface of the dielectric substrate, the annular metal patch and a central probe of the feed SMA are concentrically arranged, a lower arc-shaped microstrip line is arranged along the circumferential direction of the annular metal patch, the lower arc-shaped microstrip line is connected with the annular metal patch through the connecting branch, and the lower arc-shaped microstrip line is spaced from the dielectric substrate and corresponds to the upper arc-shaped microstrip line in position;

the circular metal patch and the annular metal patch are partially overlapped in the extending direction of the feed SMA center probe; the metal column penetrates through the dielectric substrate and is connected with the tail end of the upper arc-shaped microstrip line.

2. The 4G LTE wideband omni directional antenna of claim 1, wherein: the number of the upper arc-shaped microstrip lines is multiple, and the upper arc-shaped microstrip lines are wound and fed with the SMA center probe circular equidistant array;

the number of the lower arc-shaped microstrip lines is the same as that of the upper arc-shaped microstrip lines;

the number of the metal posts is the same as that of the upper arc microstrip lines.

3. The 4G LTE wideband omni directional antenna of claim 2, wherein: the number of the upper arc-shaped microstrip lines is three.

4. The 4G LTE wideband omni directional antenna of claim 1, wherein: the diameter of the inner ring of the annular metal patch is larger than that of the feed SMA center probe.

5. The 4G LTE wideband omnidirectional antenna of claim 3, wherein: the dielectric substrate is a circular dielectric substrate.

6. The 4G LTE wideband omnidirectional antenna of claim 5, wherein: the metal floor is circular, a central hole is formed in the metal floor, the probe of the feed SMA penetrates through the central hole, fixing holes are further formed in the periphery of the central hole, and fixing bolts penetrate through the fixing holes to fix the feed SMA on the metal floor.

7. The 4G LTE wideband omni directional antenna of claim 1, wherein: the metal column is vertically connected with the metal floor, the floor is parallel to the dielectric substrate, and a gap is formed between the metal floor and the dielectric substrate.

8. The 4G LTE wideband omni directional antenna of claim 1, wherein: one end, close to the metal column, of the lower arc-shaped microstrip line does not intersect with the metal column.

9. A bandwidth adjusting method of a 4G LTE broadband omnidirectional antenna is characterized in that: adjusting the wideband frequency of the 4GLTE wideband omni directional antenna of any one of claims 1-8, the bandwidth adjustment method comprising:

and respectively adjusting the resonance frequency of the low-end band-pass and the resonance frequency of the high-end band-pass, and combining the low-end band-pass frequency and the high-end band-pass frequency to cover a wider resonance frequency range.

10. The method of claim 9, wherein the method for adjusting the bandwidth of the 4G LTE wideband omni-directional antenna comprises:

adjusting the low-end band-pass resonance frequency by adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch and adjusting the thickness of a feed SMA center probe, and adjusting the high-end band-pass resonance frequency by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and adjusting the thickness of the metal column;

or the like, or, alternatively,

the low-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and the thickness of the metal column, and the high-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch and the thickness of the feed SMA center probe.

Technical Field

The invention relates to the technical field of antennas, in particular to a 4G LTE omnidirectional antenna.

Background

With the rapid development of information technology, the wireless communication data traffic is increasing rapidly, which also puts higher demands on wireless base stations, and antennas are playing a significant role in wireless communication systems as devices for transmitting and receiving radio signals.

On one hand, the base station antenna needs to be able to cover a sufficiently large impedance bandwidth, for example, 1.7-2.7GHz includes many commonly used frequency bands, such as DCS1800 (1710-.

On the other hand, the omni-directional antenna has a great demand in a wireless communication base station, especially an indoor communication base station, because it can realize 360 ° full coverage of signals in a certain azimuth plane. Therefore, the research on the broadband omnidirectional antenna has important practical significance.

Disclosure of Invention

In order to solve the problems, the invention adopts the technical scheme that:

a 4G LTE wideband omni-directional antenna, comprising: a metal floor, a dielectric substrate, a feed SMA,

the metal floor and the dielectric substrate are supported and connected through metal columns,

the central probe of the feed SMA penetrates through the dielectric substrate, a circular metal patch which is concentrically welded with the central probe of the feed SMA is arranged on the surface of one side of the dielectric substrate, which is far away from the metal floor, and an upper arc microstrip line is arranged along the circumferential direction of the circular patch;

an annular metal patch is arranged on the other side surface of the dielectric substrate, the annular metal patch and a central probe of the feed SMA are concentrically arranged, a lower arc-shaped microstrip line is arranged along the circumferential direction of the annular metal patch, the lower arc-shaped microstrip line is connected with the annular metal patch through the connecting branch, and the lower arc-shaped microstrip line is spaced from the dielectric substrate and corresponds to the upper arc-shaped microstrip line in position;

the circular metal patch and the annular metal patch are partially overlapped in the extending direction of the feed SMA center probe;

the metal column penetrates through the dielectric substrate and is connected with the tail end of the upper arc-shaped microstrip line.

Furthermore, the number of the upper arc-shaped microstrip lines is multiple, and the upper arc-shaped microstrip lines are wound around the feed SMA center probe and are arrayed in a circular equidistant manner;

the number of the lower arc-shaped microstrip lines is the same as that of the upper arc-shaped microstrip lines;

the number of the metal posts is the same as that of the upper arc-shaped microstrip lines.

Further, the number of the upper arc-shaped microstrip lines is three.

Further, the diameter of the inner ring of the annular metal patch is larger than that of the feed SMA center probe.

Further, the dielectric substrate is a circular dielectric substrate.

Furthermore, the metal floor is circular, a central hole is formed in the metal floor, the probe of the feed SMA penetrates through the central hole, fixing holes are further formed in the periphery of the central hole, and the fixing bolt penetrates through the fixing holes to fix the feed SMA on the metal floor.

Further, the metal column and the metal floor are vertically connected, the floor and the dielectric substrate are parallel to each other, and a gap is formed between the metal floor and the dielectric substrate.

Furthermore, one end of the lower arc-shaped microstrip line, which is close to the metal pillar, does not intersect with the metal pillar.

The application also provides a bandwidth adjusting method of the 4G LTE broadband omnidirectional antenna, which is used for adjusting the broadband frequency of the 4G LTE broadband omnidirectional antenna, and the bandwidth adjusting method includes:

and respectively adjusting the resonance frequency of the low-end band-pass and the resonance frequency of the high-end band-pass, and combining the low-end band-pass frequency and the high-end band-pass frequency to cover a wider resonance frequency range.

Further, adjusting the low-side band-pass resonant frequency comprises: adjusting the low-end band-pass resonance frequency by adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch and adjusting the thickness of a feed SMA center probe, and adjusting the high-end band-pass resonance frequency by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and adjusting the thickness of the metal column;

or the like, or, alternatively,

the low-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and the thickness of the metal column, and the high-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch and the thickness of the feed SMA center probe.

The invention has the beneficial effects that:

an inductor formed by equivalently feeding the SMA center probe and a capacitor formed by equivalently feeding the circular metal patch and the annular patch form a series resonance loop to form a first resonance frequency point; the equivalent capacitor formed by the upper arc microstrip line and the lower arc microstrip line arranged on the upper surface and the lower surface of the dielectric substrate is equivalent to the metal column connected with the tail end of the upper arc microstrip line to form an inductor, and the formed series resonance loop forms a second resonance frequency point. The resonance frequencies of the two resonance frequency points can be independently tuned respectively, and the size of the resonance frequency can be controlled by adjusting the physical structure parameters of the antenna, so that the two resonance frequencies are respectively positioned at the low end and the high end of the passband, and the target bandwidth is covered. The number and the complexity of the antennas are not increased while the antennas have wider bandwidth, and the reconfigurable setting of the antennas is not needed.

The upper arc microstrip line and the lower arc microstrip line are arranged along the circumferential direction of the feed SMA, so that the emitted electromagnetic waves can be emitted along the circumferential direction of the central probe of the central SMA, and 360-degree signal coverage of the circumferential direction of the central probe is realized.

Drawings

FIG. 1 is a schematic diagram of an exploded antenna structure according to an embodiment of the present invention;

FIG. 2 is a top view of a dielectric substrate of an antenna according to an embodiment of the present invention;

fig. 3 is a bottom view of a dielectric substrate of an antenna according to an embodiment of the present invention;

FIG. 4 is a front view of an antenna in an embodiment of the present invention;

FIG. 5 is an equivalent circuit diagram of an antenna according to an embodiment of the present invention;

FIG. 6 is a graph of measured reflection coefficients of an antenna according to an embodiment of the present invention;

FIG. 7 is a radiation pattern of an antenna in an embodiment of the present invention;

reference numerals:

a metal floor-10, a central hole-11 and a fixing hole-12;

a dielectric substrate-20;

a feed SMA-30, a center probe-31 and a fixing bolt-32;

a circular metal patch-51, an annular metal patch-52, an upper arc microstrip line-53, a lower arc microstrip line-54, a connecting branch-55 and a metal column-56.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art.

As shown in fig. 1 to 7, the present invention provides a 4G LTE wideband omni-directional antenna, including: the metal floor 10, the dielectric substrate 20 and the power feeding SMA30, wherein the metal floor 10 and the dielectric substrate 20 are in supporting connection through the metal column 56,

the central probe 31 of the feeding SMA30 penetrates through the dielectric substrate 20, a circular metal patch 51 concentrically welded with the central probe 31 of the feeding SMA30 is arranged on the surface of one side of the dielectric substrate 20 away from the metal floor 10, and an upper arc-shaped microstrip line 53 is arranged along the circumferential direction of the circular patch;

an annular metal patch 52 is arranged on the other side surface of the dielectric substrate 20, the annular metal patch 52 and the central probe 31 of the feed SMA30 are concentrically arranged, a lower arc microstrip line 54 is arranged along the circumferential direction of the annular metal patch 52, the lower arc microstrip line 54 is connected with the annular metal patch 52 through the connecting branch 55, and the lower arc microstrip line 54 corresponds to the upper arc microstrip line 53 at a position spaced by the dielectric substrate 20;

the circular metal patch 51 and the annular metal patch 52 are partially overlapped in the extending direction of the center probe 31 of the feed SMA 30; the metal column 56 penetrates through the dielectric substrate 20 and is connected with the tail end of the upper arc microstrip line 53.

The existing antenna capable of covering a sufficiently large impedance bandwidth generally covers these frequency bands through a multi-antenna structure or a frequency reconfigurable antenna, which inevitably causes coupling or parasitic problems, and also increases the complexity of the antenna and/or a power amplifier system, which causes an increase in manufacturing difficulty and manufacturing cost.

According to the technical scheme provided by the invention, a series resonance loop formed by an inductor formed by equivalently feeding the SMA30 central probe 31 and a capacitor formed by equivalently forming the circular metal patch 51 and the annular patch forms a first resonance frequency point; the equivalent capacitance formed by the upper arc microstrip line 53 and the lower arc microstrip line 54 arranged on the upper and lower surfaces of the dielectric substrate 20 is equivalent to the inductance formed by the metal column 56 connected with the tail end of the upper arc microstrip line 53, and the formed series resonance loop forms a second resonance frequency point. The resonant frequencies of the two resonant frequency points can be independently tuned respectively, and the size of the resonant frequency can be controlled by adjusting the physical structure parameters of the antenna, so that the two resonant frequencies are respectively positioned at the low end and the high end of the passband, and the target bandwidth is covered by 1.7-2.7 GHz. The number and the complexity of the antennas are not increased while the antennas have wider bandwidth, and the reconfigurable setting of the antennas is not needed.

It should be noted that, the above-mentioned feeding mode of two resonant frequency points is that, the interface of the feeding SMA30 is connected with the signal line, the high-frequency oscillation current enters from the interface of the feeding SMA30 to the center probe 31 of the feeding SMA30, the center of the circular metal patch 51 is welded with the center probe 31 of the feeding SMA30, the circular metal patch 51 and the annular metal patch 52 are partially overlapped in the extending direction of the center probe 31 of the feeding SMA30, the medium substrate 20 is spaced in the middle, and at this time, the overlapped part and the medium substrate 20 between the overlapped part jointly form a plate capacitor; correspondingly, the upper arc microstrip line 53 and the lower arc microstrip line 54 are located corresponding to each other through the dielectric substrate 20, that is, the upper arc microstrip line 53 and the lower arc microstrip line 54 coincide with each other through the dielectric substrate 20, so that the upper arc microstrip line 53, the dielectric substrate 20 and the lower arc microstrip line 54 jointly form another planar capacitor, the lower arc microstrip line 54 feeds power to the upper arc microstrip line 53, and the upper arc microstrip line 53 is grounded through the metal pillar 56 to form an equivalent inductor. The high-frequency oscillation current finally input is radiated outward by the electromagnetic wave generated at the metal post 56.

Fig. 5 shows a schematic diagram of the equivalent capacitance and the equivalent inductance of the present invention on the left side, wherein the center probe 31 of the feeding SMA30 is equivalent to an inductance L1, and the overlapped part of the circular metal patch 51 and the annular metal patch 52 is equivalent to a capacitance C1; the upper arc microstrip line 53 and the lower arc microstrip line 54 are equivalent to a capacitor C2, and the metal pillar 56 is equivalent to an inductor L2. As shown in the right side of the circuit diagram of FIG. 5, L1 and C1 form a series resonant loop to form a first resonant frequency point, and L2 and C2 form a series resonant loop to form a first resonant frequency point.

Equivalent capacitors formed between the circular metal patch 51 and the annular metal patch 52 and between the upper arc-shaped microstrip antenna and the lower arc-shaped microstrip antenna are flat capacitors, and compared with a direct connection capacitor, the equivalent flat capacitors are adopted, so that the mounting structure of the antenna is simplified, and the whole band width which is large enough can be covered.

Further, the number of the upper arc-shaped microstrip lines 53 is multiple, and the multiple upper arc-shaped microstrip lines 53 are arrayed around the feed SMA30 center probe 31 in a circular equidistant manner;

the number of the lower arc-shaped microstrip lines 54 is the same as that of the upper arc-shaped microstrip lines 53;

the number of the metal posts 56 is the same as that of the upper arc-shaped microstrip line 53.

The number and array angle of the lower arc microstrip lines 54 and the metal posts 56 are the same as those of the upper arc microstrip lines, and each upper arc microstrip line has a lower arc microstrip line and a metal post corresponding to the upper arc microstrip line one by one.

Electromagnetic waves generated at the metal column 56 radiate outwards, a flat capacitor formed by each group of upper arc microstrip lines 53 and upper arc microstrip lines 53 is connected with one metal column 56, a plurality of upper arc microstrip lines 53 surround the feed SMA30 and other center probes 31 in a circular equidistant array, so that the metal columns 56 are equidistantly arranged around the center probes 31 of the feed SMA30 and are uniformly arranged, the electromagnetic waves generated by the plurality of metal columns 56 are distributed with good symmetry, an electromagnetic field with good symmetry is obtained, and the antenna has better omnidirectional radiation performance.

Further, the number of the upper arc-shaped microstrip lines 53 is three.

As shown in fig. 1, when the number of the upper arc-shaped microstrip lines 53 is three, the number of the lower arc-shaped microstrip lines 54 and the number of the metal posts 56 are also three, respectively, the generated electromagnetic field has better symmetry, and the number of the upper arc-shaped microstrip lines 53 is three, so that the symmetry of the electromagnetic field and the production cost of the antenna can be well balanced.

Fig. 6 is a graph showing the actually measured reflection coefficients of the antenna when the number of the metal posts 56 is three, and the reflection coefficients of the 4GLTE broadband omnidirectional antenna provided by the present application in the frequency band of 1.7-2.7GHz are all less than-10 dp, which meets the design requirements of the antenna.

Fig. 7 shows the radiation pattern of the 1.7-2.7GHz band antenna when the number of the metal posts 56 is three, and it can be clearly seen from the drawing that the 4GLTE broadband omnidirectional antenna provided by the present invention has better electromagnetic field symmetry when transmitting signals of the 1.7-2.7GHz band, so that the antenna has better omnidirectional radiation performance.

Further, the diameter of the ring in the annular metal patch 52 is larger than the diameter of the center probe 31 of the feeding SMA 30.

A certain gap is formed between the annular metal patch 52 and the center probe 31 of the feed SMA30, and the center probe 31 of the feed SMA30 feeds power in a capacitive coupling mode, so that the impedance matching effect of the antenna can be improved.

Further, the dielectric substrate 20 is a circular dielectric substrate 20.

The central probe 31 of the feeding SMA30 penetrates through the center of the circular dielectric substrate 20, and the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54 are arranged in the circular dielectric.

Further, the metal floor 10 is circular, the metal floor 10 is provided with a central hole 11, a probe of the power feeding SMA30 passes through the central hole 11, a fixing hole 12 is further formed around the central hole 11, and the fixing bolt 32 passes through the fixing hole 12 to fix the power feeding SMA30 on the metal floor 10. The power feeding SMA30 is fixed by the fixing bolt 32 and the fixing hole 12, and the center probe 31 of the power feeding SMA30 passes through the center hole 11 and extends to the dielectric substrate 20 to feed the arc microstrip line on the dielectric substrate 20.

Further, the metal studs 56 are vertically connected to the metal floor 10, the floor and the dielectric substrate 20 are parallel to each other, and a gap is formed between the metal floor 10 and the dielectric substrate 20.

Air is used as a medium in a gap between the metal floor 10 and the dielectric substrate 20, and the impedance bandwidth of the antenna is further expanded.

Further, one end of the lower arc-shaped microstrip line 54 close to the metal pillar 56 does not intersect with the metal pillar 56. That is, the length of the lower arc microstrip line 54 close to one end of the metal column 56 is shorter than the length of the upper arc microstrip line 53, the section of the upper arc microstrip line 53 that is increased is connected with the metal column 56, only the upper arc microstrip line 53 is connected with the metal column 56 to generate an equivalent inductor and form a resonant circuit together with the plate capacitor, the high-frequency oscillation current firstly passes through the capacitor formed by the upper arc microstrip line and the lower arc microstrip line 54 in an equivalent manner and then enters the metal column 56, and an electromagnetic field radiated to the air is generated at the metal column 56.

The application also provides a bandwidth adjusting method of the 4G LTE broadband omnidirectional antenna, which is used for adjusting the broadband frequency of the 4G LTE broadband omnidirectional antenna, and the bandwidth adjusting method includes:

and respectively adjusting the resonance frequency of the low-end band-pass and the resonance frequency of the high-end band-pass, and combining the low-end band-pass frequency and the high-end band-pass frequency to cover a wider resonance frequency range.

An object of the present invention is to provide a broadband antenna, so as to replace the existing broadband antenna implemented by multiple antennas or reconfigurable mode, simplify the structure of the broadband antenna, and avoid the problems of unnecessary coupling and parasitic coupling. Through setting up first resonance point and the second resonance point that two resonant circuit formed respectively, the resonant frequency of two resonance frequency points can be separately tuned respectively, can control resonant frequency's size through adjustment antenna physical structure parameter, makes two resonant frequency be located the low side and the high-end of passband respectively to cover target bandwidth 1.7-2.7 GHz. Namely, when the first resonance point is adjusted to the low-end band-pass frequency, the second resonance point is adjusted to the high-end band-pass frequency; if the first resonance point is adjusted to the high-end band-pass frequency, the second resonance point is adjusted to the low-end band-pass frequency.

The high-end band-pass frequency and the low-end band-pass frequency are combined to cover the target bandwidth frequency band together, a plurality of antennas are not required to be combined or the antennas are reconfigurable, and the broadband antenna can be realized by only one antenna.

Further, adjusting the low-side band-pass resonant frequency comprises: adjusting the low-end band-pass resonance frequency by adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch and adjusting the thickness of a feed SMA center probe, and adjusting the high-end band-pass resonance frequency by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and adjusting the thickness of the metal column;

or the like, or, alternatively,

the low-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and the thickness of the metal column, and the high-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch and the thickness of the feed SMA center probe.

Specifically, increasing the size of the circular patch or decreasing the diameter of the inner ring of the annular patch can increase the overlapping area of the circular patch and the annular patch, and further increase the capacitance value of the capacitor L1 formed by the circular patch and the annular patch, so that the first resonant frequency is shifted to a low frequency, and vice versa. On the other hand, decreasing the length of the upper arc microstrip line 53 and/or the lower arc microstrip line 54 can decrease the overlapping area of the upper arc microstrip line 53 and the lower arc microstrip line 54, and further decrease the capacitance of the capacitor formed between the arc microstrip lines on the upper and lower surfaces of the substrate, so that the second resonant frequency moves in the high-frequency direction, and vice versa.

Further, the thickness of the center probe 31 and the metal post 56 of the feeding SMA30 affects the inductance of the inductor, and specifically, the thinner the center probe 31 or the metal post 56 of the feeding SMA30, the larger the inductance of the inductor, and the lower the first resonance frequency or the second resonance score.

And respectively adjusting the first resonance point or the second resonance point to be a low-end band-pass band or a high-end band-pass band, so that the bandwidth of the antenna can cover a wider frequency band.

In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "center", "top", "bottom", "inner", "outer", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for the purpose of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present invention. Where "inside" refers to an interior or enclosed area or space. "periphery" refers to an area around a particular component or a particular area.

In the description of the embodiments of the present invention, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", "third", "fourth" may explicitly or implicitly include one or more of the features. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "assembled" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the description of the embodiments of the invention, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the embodiments of the present invention, it should be understood that "-" and "-" indicate the same range of two numerical values, and the range includes the endpoints. For example, "A-B" means a range greater than or equal to A and less than or equal to B. "A to B" means a range of not less than A and not more than B.

In the description of the embodiments of the present invention, the term "and/or" herein is only one kind of association relationship describing an associated object, and means that there may be three kinds of relationships, for example, a and/or B, and may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.