阅读说明：本技术 一种磷化铟单晶的生长装置及生长方法 (Growth device and growth method of indium phosphide single crystal ) 是由 庞昊 谢雨凌 于 2021-07-30 设计创作，主要内容包括：本发明涉及晶体生长技术领域,特别涉及一种磷化铟单晶的生长装置,包括固定加热器、移动加热器、晶体生长容器和电磁搅拌装置,所述移动加热器和电磁搅拌装置可在晶体生长容器外移动。本发明还提供一种磷化铟单晶的生长方法,通过将原料放入到晶体生长容器中并加热到750℃,然后通过移动加热器加热到1075℃,移动移动加热器和电磁搅拌装置至其铅垂面离开晶体生长容器,保温并待炉温降至室温。本发明降低了Si污染,制得的单晶纯度高；采用移动加热器的方法,避免移动晶体生长容器可能引起的振动,能有效提高单晶率；通过双加热器的相对移动实现温场的移动,温场控制相对简单,控温精度容错率高,便于维护和校准。(The invention relates to the technical field of crystal growth, in particular to an indium phosphide single crystal growth device which comprises a fixed heater, a movable heater, a crystal growth container and an electromagnetic stirring device, wherein the movable heater and the electromagnetic stirring device can move outside the crystal growth container. The invention also provides a growth method of the indium phosphide single crystal, which comprises the steps of putting the raw materials into a crystal growth container, heating to 750 ℃, then heating to 1075 ℃ by moving the heater, moving the moving heater and the electromagnetic stirring device until the vertical plane of the moving heater and the electromagnetic stirring device leaves the crystal growth container, preserving the temperature, and cooling the furnace to room temperature. The invention reduces Si pollution, and the prepared single crystal has high purity; the method of moving the heater is adopted, so that the vibration possibly caused by moving the crystal growth container is avoided, and the single crystal rate can be effectively improved; the movement of the temperature field is realized through the relative movement of the double heaters, the temperature field control is relatively simple, the fault tolerance rate of the temperature control precision is high, and the maintenance and the calibration are convenient.)

1. An indium phosphide single crystal growth apparatus, characterized in that: the device comprises a fixed heater (1), a movable heater (2), a crystal growth container (3) and an electromagnetic stirring device (4), wherein the movable heater (2) and the electromagnetic stirring device (4) can move outside the crystal growth container (3).

2. The growth apparatus of an indium phosphide single crystal as set forth in claim 1, wherein: the fixed heater (1), the movable heater (2), the crystal growth container (3) and the electromagnetic stirring device (4) are all arranged in the horizontal furnace (5).

3. The growth apparatus of an indium phosphide single crystal as set forth in claim 1, wherein: the fixed heater (1) and the movable heater (2) are both heating coils.

4. The growth apparatus of an indium phosphide single crystal as set forth in claim 1, wherein: the crystal growth container (3) comprises a tubular part, a funnel part and a hollow cylindrical part which are sequentially connected, wherein the top end of the tubular part is provided with a groove to form an open shape, the hollow cylindrical part is a seed crystal area for placing seed crystals, the funnel part is a shoulder area, and the tubular part is a growth area for crystal growth.

5. A growth method of an indium phosphide single crystal is characterized by comprising the following specific steps:

s1, putting seed crystals into a seed crystal area of the crystal growth container (3);

s2, putting the indium phosphide polycrystal material and auxiliary materials into a crystal growth container (3), wherein the auxiliary materials are a covering agent and a phosphorus supplement;

s3, putting the crystal growth container (3) in the S2 into a horizontal furnace (5), and filling electron-level argon into the horizontal furnace (5);

s4, moving the movable heater (2) to enable the movable heater and the seed crystal area to be on the same vertical plane;

s5, simultaneously turning on the fixed heater (1) and the movable heater (2), setting the target temperature to 750 ℃, and heating up to the target temperature at the heating rate of 10 ℃/min;

s6, after the temperature in the horizontal furnace (5) is stabilized, setting the target temperature of the movable heater (2) to 1075 ℃, and setting the heating speed to 1 ℃/min;

s7, after the temperature in the fixed heater (1) and the movable heater (2) is stable, opening the electromagnetic stirring device (4), and simultaneously moving the movable heater (2) and the electromagnetic stirring device (4) to the other end of the crystal growth container (3) slowly, wherein the moving speed is 1.0 mm/h in the shoulder area and 2.2 mm/h in the growth area, and after the vertical planes of the movable heater (2) and the electromagnetic stirring device (4) leave the crystal growth container (3), ending the growth, and closing the movable heater (2) and the electromagnetic stirring device (4);

s8, after the movable heater (2) and the electromagnetic stirring device (4) are closed, preserving heat to enable the furnace temperature to reach balance again, and then slowly cooling at a cooling speed of 5 ℃/min;

and S9, cooling the furnace temperature of the horizontal furnace (5) to room temperature, and finishing the growth of the single crystal.

6. The method for growing an indium phosphide single crystal as defined in claim 5, wherein: in step S2, the covering agent is anhydrous boron oxide, the phosphorus supplement agent is red phosphorus, and the mass ratio of the indium phosphide polycrystal material to the anhydrous boron oxide to the red phosphorus is 95: 3.8: 1.2.

7. the method for growing an indium phosphide single crystal as defined in claim 5, wherein: in step S3, the purity of the electronic grade argon gas is 99.9999%, and the pressure in the horizontal furnace (5) is 18 atm.

8. The method for growing an indium phosphide single crystal as defined in claim 5, wherein: in step S6, during the heating, argon gas is supplied in small amounts plural times so that the pressure in the final horizontal furnace (5) is stabilized at 27.5 atm.

Technical Field

The invention relates to the technical field of crystal growth, in particular to a growth device and a growth method of an indium phosphide single crystal.

Background

Indium phosphide is a compound semiconductor and has been produced for many years. Distinguished from pure elemental first generation semiconductors (e.g., Si) and third generation semiconductors characterized by an ultra-wide bandgap (e.g., SiC). Indium phosphide is generally considered as a second-generation semiconductor. In recent years, with the technical development in the field of communication, new requirements and technical requirements are made on indium phosphide.

There are various methods for growing the indium phosphide single crystal, such as liquid encapsulation Czochralski method (LEC), horizontal Bridgman method, vertical temperature gradient method (VGF), and the like. These methods have limitations, for example, the ingot grown by LEC has a great disadvantage in lattice indexes such as dislocation density; mechanical movement of the vessel in the bridgeman process reduces the rate of crystallization; the VGF method has low growth efficiency and very high control precision requirement on the temperature field, is difficult to realize in practical application, and in addition, each furnace is required to be calibrated periodically and independently. In addition, in the prior art, Pyrolytic Boron Nitride (PBN) or high-purity quartz is commonly used as a container required for indium phosphide growth. PBN is expensive and quartz melt contact for a long time can produce Si contamination in the resulting crystal.

Disclosure of Invention

The invention solves the problems that the temperature field control difficulty is high and the repeated maintenance is needed in the related technology, and the high-temperature melt contacts with the quartz container for a long time to generate Si pollution, and provides the growth device of the indium phosphide single crystal.

The invention also provides a growth method for growing the indium phosphide single crystal by adopting the growth device, and most of indium phosphide (including single crystal and polycrystal) is in contact with a crystal growth container made of quartz material at the temperature of about 750 ℃ in most of the growth process, so that the pollution of Si is greatly reduced, and the high-purity single crystal can be obtained; the method of moving the heater is adopted, the vibration possibly caused by moving the crystal growth container is avoided, and the single crystal rate can be effectively improved.

In order to solve the technical problems, the invention is realized by the following technical scheme: the growth device of the indium phosphide single crystal comprises a fixed heater, a movable heater, a crystal growth container and an electromagnetic stirring device, wherein the movable heater and the electromagnetic stirring device can move outside the crystal growth container.

Preferably, the fixed heater, the movable heater, the crystal growth container and the electromagnetic stirring device are all arranged in a horizontal furnace.

Preferably, the fixed heater and the moving heater are both heating coils.

Preferably, the crystal growth container comprises a tubular part, a funnel part and a hollow cylindrical part which are sequentially connected, wherein a groove is formed in the top end of the tubular part so as to form an open shape, the hollow cylindrical part is a seed crystal area for placing seed crystals, the funnel part is a shoulder area, and the tubular part is a growth area for crystal growth.

In another aspect of the present invention, a method for growing an indium phosphide single crystal is further provided, which comprises the following steps:

s1, placing seed crystals into a seed crystal area of the crystal growth container;

s2, putting the indium phosphide polycrystal material and auxiliary materials into a crystal growth container, wherein the auxiliary materials are a covering agent and a phosphorus supplement;

s3, putting the crystal growth container in the S2 into a horizontal furnace, and filling electronic-grade argon into the horizontal furnace;

s4, moving the moving heater to enable the moving heater and the seed crystal area to be on the same vertical plane;

s5, simultaneously turning on the fixed heater and the movable heater, setting the target temperature to be 750 ℃, and heating at the heating rate of 10 ℃/min until the target temperature is reached;

s6, after the temperature in the horizontal furnace is stable, setting the target temperature of the movable heater to 1075 ℃, and setting the heating speed to 1 ℃/min;

s7, after the temperature in the fixed heater and the movable heater is stable, turning on the electromagnetic stirring device, and simultaneously slowly moving the movable heater and the electromagnetic stirring device to the other end of the crystal growth container, wherein the moving speed is 1.0 mm/h in the shoulder area and 2.2 mm/h in the growth area, and after the vertical planes of the movable heater and the electromagnetic stirring device leave the crystal growth container, ending the growth, turning off the movable heater and the electromagnetic stirring device;

s8, after the movable heater and the electromagnetic stirring device are closed, preserving heat to enable the furnace temperature to reach balance again, and then slowly cooling at a cooling speed of 5 ℃/min;

and S9, cooling the horizontal furnace to room temperature, and finishing the growth of the single crystal.

Preferably, in step S2, the covering agent is anhydrous boron oxide, the phosphorus supplement agent is red phosphorus, and the mass ratio of the indium phosphide polycrystal material to the anhydrous boron oxide to the red phosphorus is 95: 3.8: 1.2.

preferably, in step S3, the purity of the electronic grade argon gas is 99.9999%, and the pressure in the horizontal furnace is 18 atm.

Preferably, in step S6, during the heating process, argon gas is replenished in small amounts plural times so that the final pressure in the horizontal furnace is stabilized at 27.5 atm.

Compared with the prior art, the invention has the beneficial effects that:

(1) cheap quartz is used as a growth container, so that the production cost is greatly reduced, and most of indium phosphide (including single crystal and polycrystal) is in contact with the crystal growth container made of quartz material at the temperature of about 750 ℃ in most of the growth process, so that the pollution of Si is greatly reduced, and high-purity single crystal can be obtained;

(2) the method of moving the heater is adopted, so that the vibration possibly caused by moving the crystal growth container is avoided, and the single crystal rate can be effectively improved;

(3) the relative movement through two heaters realizes the removal of temperature field, only uses the heating coil of two single tasks, compares in the VGF method of multi-temperature-zone design, and temperature field control is simple relatively, and the fault-tolerant rate of temperature control precision is high, does not have special requirement to the design of growth device shape, and in the production that lasts, the crystal growth device of this application also is convenient for more maintain and the calibration.

Drawings

FIG. 1 is a schematic view of the structure of an apparatus for growing an indium phosphide single crystal according to the present invention;

FIG. 2 is a side view of a crystal growth vessel of the present invention.

In the figure:

1. a fixed heater, 2 a movable heater, 3 a crystal growth container, 4 an electromagnetic stirring device, 5 and a horizontal furnace.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.

The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.

In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and in the case of not making a reverse description, these orientation words do not indicate and imply that the device or element being referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore, should not be considered as limiting the scope of the present invention; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.

Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.

Example 1

As shown in fig. 1 to 2, an indium phosphide single crystal growth apparatus comprises a fixed heater 1, a movable heater 2, a crystal growth container 3 and an electromagnetic stirring device 4, wherein the fixed heater 1 provides a background temperature for crystal growth, the movable heater 2 and the electromagnetic stirring device 4 can move outside the crystal growth container 3, specifically, the movable heater 2 and the electromagnetic stirring device 4 are connected with 3 high-temperature-resistant lead screws, and the lead screws are driven by a motor, so that the movable heater 2 and the electromagnetic stirring device 4 can move; the electromagnetic stirring device 4 is used for generating circulation flow in the indium phosphide melt, so that the grown single crystal is more uniform.

In one embodiment, the fixed heater 1, the moving heater 2, the crystal growth vessel 3, and the electromagnetic stirring device 4 are all placed within a horizontal furnace 5.

In one embodiment, both the fixed heater 1 and the moving heater 2 are heating coils.

In one embodiment, the crystal growth vessel 3 comprises a tubular part, a funnel part and a hollow cylindrical part which are connected in sequence, wherein the top end of the tubular part is provided with a groove so as to form an open shape, the hollow cylindrical part is a seed crystal area for placing seed crystals, and the internal space of the hollow cylindrical part has the length of 50mm and the diameter of 4.2 mm; the funnel part is a shouldering area, the tubular part is a growth area for crystal growth, and the diameter of a circle of the tubular part is 76 mm.

Example 2

In another aspect of the present invention, a method for growing an indium phosphide single crystal is further provided, which comprises the following steps:

s1, putting seed crystals into the seed crystal area of the crystal growth container 3;

s2, putting the indium phosphide polycrystal material and auxiliary materials into the crystal growth container 3 (the filling height is generally not more than three-fourths of the diameter of the crystal growth container 3), wherein the auxiliary materials are a covering agent and a phosphorus supplement agent;

s3, putting the crystal growth container 3 in the S2 into a horizontal furnace 5, and filling electronic-grade argon into the horizontal furnace 5;

s4, moving the heater 2 to make it and the seed crystal region on the same vertical plane;

s5, simultaneously turning on the fixed heater 1 and the movable heater 2, setting the target temperature to 750 ℃, and heating at the heating rate of 10 ℃/min until the target temperature is reached;

s6, after the temperature in the horizontal furnace 5 is stable, setting the target temperature of the movable heater 2 to 1075 ℃, and setting the heating speed to 1 ℃/min;

s7, after the temperature in the fixed heater 1 and the movable heater 2 is stable, turning on the electromagnetic stirring device 4, and simultaneously slowly moving the movable heater 2 and the electromagnetic stirring device 4 to the other end of the crystal growth container 3, wherein the moving speed is 1.0 mm/h in a shoulder area, the moving speed is 2.2 mm/h in a growth area, and after the vertical planes of the movable heater 2 and the electromagnetic stirring device 4 leave the crystal growth container 3, the growth is finished, and the movable heater 2 and the electromagnetic stirring device 4 are turned off;

s8, after the movable heater 2 and the electromagnetic stirring device 4 are closed, the temperature is kept for about 30min, so that the furnace temperature is balanced again, the temperature is stabilized at 750 ℃ only under the action of the fixed heater 1, and then the temperature is slowly reduced at the speed of 5 ℃/min;

s9, cooling the horizontal furnace 5 to room temperature, and finishing the growth of the single crystal.

After step S4 is completed, the anhydrous boron oxide is in a molten state and covers the indium phosphide polycrystalline surface layer; in the process of performing steps S6 and S7, the indium phosphide polycrystal is melted in the region immediately adjacent to the moving heater 2, and then this melted region is gradually cooled to 750 ℃ with the distance from the moving heater 2, and is solidified into a part of the indium phosphide single crystal; while performing steps S6 and S7, it is required to fix the temperature of other areas within the heater 1, which is the background temperature in the present invention, to be maintained at 750 ℃, and this temperature can be characterized by a thermocouple located away from the moving heater 2.

In one embodiment, in step S2, the covering agent is anhydrous boron oxide, the phosphorus supplement agent is red phosphorus, and the mass ratio of the indium phosphide polycrystal material to the anhydrous boron oxide to the red phosphorus is 95: 3.8: 1.2.

in one embodiment, in step S3, the purity of the electronic grade argon gas is 99.9999%, and the pressure in the horizontal furnace 5 is 18 atm.

In one embodiment, in step S6, during the heating process, argon gas is replenished a small number of times so that the pressure in the final horizontal furnace 5 is stabilized at 27.5 atm.

The above embodiments are preferred embodiments of the present invention, and those skilled in the art can make variations and modifications to the above embodiments, therefore, the present invention is not limited to the above embodiments, and any obvious improvements, substitutions or modifications made by those skilled in the art based on the present invention are within the protection scope of the present invention.