阅读说明：本技术 一种大尺寸<211>晶向低位错密度锑化铟InSb晶体及其生长方法 (Large-size <211> crystal orientation low-dislocation density indium antimonide InSb crystal and growth method thereof ) 是由 赵超 董涛 彭志强 贺利军 于 2021-08-25 设计创作，主要内容包括：本发明公开了一种大尺寸<211>晶向低位错密度锑化铟InSb晶体及其生长方法,大尺寸<211>晶向低位错密度锑化铟InSb晶体生长方法包括：制备满足位错精度要求的<211>晶向InSb籽晶；将一定比例的原材料In和Sb装入炉膛内,并控制炉膛内环境参数,以在InSb晶体生长过程中,In-Sb偏离1:1摩尔比在误差范围内；将制备好的<211>晶向InSb籽晶插入熔体表面进行熔接,并控制晶体拉速、转速以及坩埚转速,以使得InSb晶体横截面轮廓与圆形的相似度大于阈值。采用本发明制备InSb晶体,解决了籽晶位错的遗传效应,降低晶体生长过程中的热应力以及热应力差异,避免了In-Sb比例失衡问题,从而减少位错缺陷,提高InSb晶体的质量和成品率。(The invention discloses a large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal and a growth method thereof, wherein the growth method of the large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal comprises the following steps: preparing InSb seed crystals with <211> crystal orientation meeting the dislocation precision requirement; charging raw materials In and Sb In a certain proportion into a hearth, and controlling environmental parameters In the hearth so that the molar ratio of In to Sb deviates from 1:1 In the InSb crystal growth process and is within an error range; inserting prepared <211> crystal orientation InSb seed crystals into the surface of the melt for welding, and controlling the crystal pulling speed, the rotating speed and the crucible rotating speed so that the similarity between the cross section outline of the InSb crystal and the circle is larger than a threshold value. The InSb crystal prepared by the method solves the genetic effect of seed crystal dislocation, reduces the thermal stress and the thermal stress difference In the crystal growth process, and avoids the problem of In-Sb ratio imbalance, thereby reducing dislocation defects and improving the quality and yield of the InSb crystal.)

1. A method for growing a large-size <211> crystal orientation low dislocation density indium antimonide (InSb) crystal is characterized by comprising the following steps:

preparing InSb seed crystals with <211> crystal orientation meeting the dislocation precision requirement;

charging raw materials In and Sb In a certain proportion into a hearth, and controlling environmental parameters In the hearth so that the molar ratio of In to Sb deviates from 1:1 In the InSb crystal growth process and is within an error range;

inserting prepared <211> crystal orientation InSb seed crystals into the surface of the melt for welding, and controlling the crystal pulling speed, the rotating speed and the crucible rotating speed so that the similarity between the cross section outline of the InSb crystal and the circle is larger than a threshold value.

2. The method of claim 1, further comprising:

in the equal diameter stage, the diameter angle is controlled to float to be less than or equal to +/-5 degrees.

3. The method of claim 2, wherein the controlled diameter is two inches or more in the constant diameter stage.

4. The method of claim 2, further comprising:

in the shouldering stage, the shouldering angle is controlled within the range of 5-15 degrees, and the shouldering angle is controlled to float to be less than or equal to +/-5 degrees;

in the ending stage, the ending angle is controlled within the range of minus 5 degrees to minus 20 degrees, and the floating of the ending angle is less than or equal to minus 5 degrees.

5. The method of claim 1, wherein the charging of the furnace with a proportion of raw materials In and Sb and controlling environmental parameters within the furnace such that In-Sb deviates from a 1:1 molar ratio within a margin of error during InSb crystal growth comprises:

will satisfy In: sb is 1: raw materials with the molar ratio of 1.01-1.1 are loaded into a hearth, hydrogen is filled into the hearth, the pressure of the gas in the hearth is controlled to be more than or equal to 1.05 atmospheric pressure, the gas flow rate is controlled to be more than or equal to 1L/min, and the temperature of the wall of a heating and cooling chamber is controlled to be more than 100 ℃.

6. The method of claim 1, wherein the method further comprises:

and in the crystal growth process, controlling the growth interface to be a slightly convex interface.

7. The method of claim 1, wherein said preparing a <211> crystal orientation seed that meets dislocation precision requirements comprises:

selecting a <211> crystal orientation InSb crystal meeting the dislocation precision requirement, and cutting a seed crystal from the crystal;

and carrying out flatness treatment on the seed crystal.

8. The method of claim 7, wherein the seed crystal is in the shape of a cuboid or cylinder.

9. The method of claim 7, wherein the planarizing the seed crystal comprises:

grinding the surface of the seed crystal by using sand paper or grinding sand to remove a cutting damage layer on the surface of the seed crystal;

and treating and removing the seed crystal after cutting the damaged layer by using an etching solution so as to remove the machining damaged layer on the surface of the seed crystal.

10. Large size<211>The indium antimonide InSb crystal with low dislocation density in crystal orientation is characterized in that the large size<211>The crystal orientation low dislocation density indium antimonide InSb crystal is prepared by the method of any one of claims 1 to 9, the large size<211>Dislocation density of crystal orientation low dislocation density indium antimonide InSb crystal is less than or equal to 10cm^-2。

Technical Field

The invention relates to the field of semiconductor materials, in particular to a large-size <211> crystal orientation low-dislocation density indium antimonide InSb crystal and a growth method thereof.

Background

The InSb material is a III-V group compound semiconductor material, has a sphalerite structure, has nearly 100% of quantum efficiency in a middle wave band of 3-5 mu m, and is commonly used for preparing middle wave band infrared detectors. The InSb Focal Plane Array (FPA) is quite mature in preparation process, is widely applied to civil infrared systems such as infrared detection, astronomical observation and the like, and achieves good results. Dislocations are discontinuities in the crystal structure that create strain fields and/or dangling bond sites that disrupt the transport of charge in the region near the dislocation. This effect can reduce the mobility and minority carrier lifetime at the detector junction, resulting in higher resistance, poor signal-to-noise ratio, and poor uniformity of the detector response in the dislocation regions. For FPA imaging devices, the degradation due to lower wafer quality manifests as dead or dark-spot pixels and pixel clusters, or uneven photoresponse in different parts of the wafer, so dislocation density is the most important factor for InSb materials for FPA.

The main stream preparation technology of InSb crystal is a Czochralski method. The Czochralski method comprises the steps of filling high-purity raw materials into a hearth, filling hydrogen atmosphere, melting the raw materials filled in a high-purity quartz crucible by using resistance or induction heating, inserting seed crystals into the surface of a melt for welding, slowly lifting the seed crystals upwards, and growing the crystals through the processes of seeding, necking, shoulder rotating, equal-diameter growth, ending and the like. The critical yield stress of the InSb material is small, and dislocation defects are easy to generate. When the <211> crystal orientation crystal is grown, dislocation lines penetrate through the whole crystal, and the number of dislocation lines is not reduced. The <211> crystal-oriented crystal is an asymmetric crystal orientation, the shape of the crystal grown is not a hexahedron close to a cylinder like the <111> crystal-oriented crystal, but is an irregular shape, and a plurality of large planes are necessarily present, which causes a large difference in growth speed of the crystal at each point in the radial direction, and thermal stress at each point is different, so that dislocation defects are easily excited in some directions. Sb has higher vapor pressure, and Sb element is continuously volatilized along with the growth of the indium antimonide crystal In the growth process of the indium antimonide crystal, so that the In-Sb ratio is continuously increased, the In-Sb ratio deviates from the 1:1 molar ratio, and twin crystals or dislocation is easily produced.

Disclosure of Invention

The invention provides a large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal and a growth method thereof, which are used for at least solving the problem of serious dislocation of the large-size <211> crystal orientation crystal.

The method for growing the large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal comprises the following steps:

preparing InSb seed crystals with <211> crystal orientation meeting the dislocation precision requirement;

charging raw materials In and Sb In a certain proportion into a hearth, and controlling environmental parameters In the hearth so that the molar ratio of In to Sb deviates from 1:1 In the InSb crystal growth process and is within an error range;

inserting prepared <211> crystal orientation InSb seed crystals into the surface of the melt for welding, and controlling the crystal pulling speed, the rotating speed and the crucible rotating speed so that the similarity between the cross section outline of the InSb crystal and the circle is larger than a threshold value.

According to some embodiments of the invention, the method further comprises:

in the equal diameter stage, the diameter angle is controlled to float to be less than or equal to +/-5 degrees.

According to some embodiments of the invention, the controlled diameter is greater than or equal to two inches during the constant diameter stage.

According to some embodiments of the invention, the method further comprises:

in the shouldering stage, the shouldering angle is controlled within the range of 5-15 degrees, and the shouldering angle is controlled to float to be less than or equal to +/-5 degrees;

in the ending stage, the ending angle is controlled within the range of minus 5 degrees to minus 20 degrees, and the floating of the ending angle is less than or equal to minus 5 degrees.

According to some embodiments of the present invention, the charging of raw materials In and Sb In a furnace In a certain ratio and controlling environmental parameters In the furnace to deviate the In-Sb from a 1:1 molar ratio within an error range during InSb crystal growth comprises:

will satisfy In: sb is 1: raw materials with the molar ratio of 1.01-1.1 are loaded into a hearth, hydrogen is filled into the hearth, the pressure of the gas in the hearth is controlled to be more than or equal to 1.05 atmospheric pressure, the gas flow rate is controlled to be more than or equal to 1L/min, and the temperature of the wall of a heating and cooling chamber is controlled to be more than 100 ℃.

According to some embodiments of the invention, the method further comprises:

and in the crystal growth process, controlling the growth interface to be a slightly convex interface.

According to some embodiments of the present invention, the preparing <211> crystal orientation seed crystal satisfying dislocation precision requirement comprises:

selecting a <211> crystal orientation InSb crystal meeting the dislocation precision requirement, and cutting a seed crystal from the crystal;

and carrying out flatness treatment on the seed crystal.

According to some embodiments of the invention, the seed crystal is rectangular parallelepiped or cylindrical.

According to some embodiments of the invention, the planarizing the seed crystal comprises:

grinding the surface of the seed crystal by using sand paper or grinding sand to remove a cutting damage layer on the surface of the seed crystal;

and treating and removing the seed crystal after cutting the damaged layer by using an etching solution so as to remove the machining damaged layer on the surface of the seed crystal.

Large size according to embodiments of the present invention<211>Crystal orientation low dislocation density indium antimonide InSb crystal, said large size<211>The indium antimonide InSb crystal with low dislocation density in crystal orientation is prepared by the method, and the large size is<211>Dislocation density of crystal orientation low dislocation density indium antimonide InSb crystal is less than or equal to 10cm^-2。

By adopting the technical scheme of the invention, the dislocation density of the InSb crystal with the large size <211> crystal orientation can be reduced to a greater extent finally through a special seed crystal preparation process, the control of the crystal pulling speed, the rotation speed and the crucible rotation speed, and an In-Sb ratio control process, and the quality of the InSb crystal material is greatly improved.

The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. In the drawings:

FIG. 1 is a flow chart of a method for growing large-size <211> crystal orientation low dislocation density indium antimonide InSb crystals in an embodiment of the invention;

fig. 2 is a schematic diagram of an InSb crystal structure in an embodiment of the present invention.

Detailed Description

Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

As shown in fig. 1, an embodiment of the first aspect of the present invention provides a method for growing a large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal, including:

s1, preparing <211> crystal orientation InSb seed crystal 1 meeting the dislocation precision requirement;

s2, charging raw materials In and Sb In a certain proportion into a hearth, and controlling environmental parameters In the hearth so that the molar ratio of In to Sb deviates from 1:1 within an error range In the InSb crystal growth process; it is understood that during InSb crystal growth, the In-Sb ratio In the furnace is maintained at substantially 1:1, i.e., the amounts of In and Sb are substantially equal.

S3, inserting the prepared <211> crystal orientation InSb seed crystal 1 into the surface of the melt for fusion welding, and controlling the crystal pulling speed, the rotating speed and the crucible rotating speed so that the similarity of the cross section outline of the InSb crystal and the circle is larger than a threshold value. It is understood that InSb crystal cross-sectional profiles can be roughly classified as circular. By adopting the scheme, the <211> crystal orientation InSb seed crystal 1 meeting the dislocation precision requirement is prepared, so that the dislocation in the seed crystal 1 can be prevented from extending to a newly grown crystal from the seed crystal 1 along with the growth of the crystal; then, In-Sb is deviated from a 1:1 molar ratio In the InSb crystal growth process and is controlled within an error range, so that twin crystals and dislocation generated by continuous volatilization of Sb elements In the crystal growth process can be reduced; and finally, by controlling the crystal pulling speed, the rotating speed and the crucible rotating speed, the similarity between the cross section outline of the InSb crystal and the circle is larger than a threshold value, so that the thermal stress and the thermal stress difference of each point during the crystal growth can be reduced, the dislocation defect is reduced, and the quality and the yield of the grown InSb crystal are improved.

On the basis of the above-described embodiment, various modified embodiments are further proposed, and it is to be noted herein that, in order to make the description brief, only the differences from the above-described embodiment are described in the various modified embodiments.

According to some embodiments of the present invention, the preparing <211> crystal orientation seed 1 satisfying dislocation precision requirements comprises:

firstly, selecting a <211> crystal orientation InSb crystal meeting the dislocation precision requirement, wherein the <211> crystal orientation InSb crystal can be a low-dislocation crystal meeting the dislocation precision threshold value and can also be a dislocation-free crystal. And cutting a seed crystal 1 of a certain length shape from the crystal; and carrying out flatness treatment on the surface of the seed crystal 1. Cutting the seed crystal 1 from the crystal with low dislocation or no dislocation and carrying out flatness treatment on the surface of the seed crystal 1 can better avoid dislocation inheritance caused by the dislocation of the seed crystal 1 in the crystal growth.

According to some embodiments of the invention, the seed crystal 1 is a cuboid.

According to some embodiments of the invention, the seed crystal 1 is cylindrical, the seed crystal 1 is cut into a cylinder, and the cross section of the grown crystal can be better controlled to be circular during the subsequent crystal growth, so that the difference of thermal stress caused by the irregular shape of the crystal surface in the subsequent crystal growth process is reduced, and the possibility of forming dislocation defects is reduced. Of course, the seed 1 may be in other regular shapes that satisfy the InSb seed growth method.

According to some embodiments of the invention, the subjecting the seed crystal 1 to flatness processing includes:

grinding the surface of the seed crystal 1 by using sand paper or grinding sand to remove a cutting damage layer on the surface of the seed crystal 1; and (3) treating and removing the seed crystal 1 after cutting the damaged layer by using an etching solution to remove the mechanical processing damaged layer on the surface of the seed crystal 1. By doing so, the dislocation problem of the seed crystal 1 itself is eliminated as much as possible, and the inheritance of dislocations brought by the seed crystal 1 can be minimized.

According to some embodiments of the present invention, the charging of raw materials In and Sb In a furnace In a certain ratio and controlling environmental parameters In the furnace to deviate the In-Sb from a 1:1 molar ratio within an error range during InSb crystal growth comprises: will satisfy In: sb is 1: the raw materials with the molar ratio of 1.01-1.1 are loaded into a hearth, hydrogen is filled into the hearth, the gas pressure in the hearth is controlled to be more than or equal to 1.05 atmospheric pressure, the gas flow rate is controlled to be more than or equal to 1L/min, and the wall temperature of a heating and cooling chamber is controlled to be more than 100 ℃, including 100 ℃, namely the wall temperature of the cooling chamber is more than or equal to 100 ℃. Since the evaporation rate of Sb materials increases exponentially with increasing temperature, excessive temperatures are avoided during melting.

According to some embodiments of the invention, the method further comprises: and controlling the shouldering angle in the InSb crystal growth process.

In some embodiments of the invention, the diameter angle is controlled to float by ± 5 ° or less during the isodiametric stage in the process of controlling the shouldering angle during InSb crystal growth. The similarity between the cross section profile of the InSb crystal and the circle is controlled to be larger than a threshold value, so that the same or close surface thermal stress numerical values of the grown InSb crystal can be guaranteed to the maximum extent, and the dislocation formed by the thermal stress difference is reduced.

For example, in some embodiments of the invention, the diameter of the grown InSb crystal is controlled to be two inches or more during the isodiametric stage.

In some embodiments of the invention, in the shouldering stage in the process of controlling the shouldering angle in the InSb crystal growth process, the shouldering angle is controlled within the range of 5-15 degrees, and the shouldering angle fluctuation is less than or equal to +/-5 degrees; in the ending stage, the ending angle is controlled within the range of minus 5 degrees to minus 20 degrees, and the floating of the ending angle is less than or equal to minus 5 degrees. By controlling the shouldering angle in the InSb crystal growth process, the large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal can be obtained, as shown in figure 2.

According to some embodiments of the invention, the method further comprises: in the crystal growth process, the growth interface is controlled to be a slightly convex interface, so that the thermal stress can be reduced, and the formation of dislocation can be reduced.

The method for growing the large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal is described in detail below as a specific example. It is to be understood that the following description is illustrative only and is not intended to be in any way limiting. All similar structures and similar variations thereof adopted by the invention are intended to fall within the scope of the invention.

As shown in fig. 2, according to some embodiments of the present invention, a large size <211> crystal orientation low dislocation density indium antimonide InSb crystal growth method includes:

a low dislocation and dislocation free <211> crystal orientation seed 1 is prepared. Firstly, selecting a <211> crystal orientation InSb crystal meeting the dislocation precision requirement, and in the embodiment, selecting a dislocation-free crystal <211> crystal orientation InSb crystal to manufacture the seed crystal 1 so as to avoid dislocation formation in the growth of the InSb crystal due to dislocation inheritance of the seed crystal 1. Cutting a cylindrical seed crystal 1 with a certain length from the dislocation-free crystal, and cutting the seed crystal 1 into a cylinder, so that the cross section of the InSb crystal is close to a uniform circle in the subsequent growth process of the InSb crystal, and the dislocation caused by the thermal stress difference due to the irregular shape of the grown crystal can be reduced; and carry out the roughness to the seed crystal 1 surface, carry out the roughness to seed crystal 1 and handle, include: grinding the surface of the seed crystal 1 by using sand paper or grinding sand to remove a cutting damage layer on the surface of the seed crystal 1; and (3) treating and removing the seed crystal 1 after cutting the damaged layer by using an etching solution to remove the mechanical processing damaged layer on the surface of the seed crystal 1. By doing so, the dislocation problem of the seed crystal 1 itself is eliminated as much as possible, and the inheritance of dislocations brought by the seed crystal 1 can be minimized.

And filling a crucible In a crystal growth hearth with In: sb is 1: 1.01-1.1, wherein the reason for increasing the molar ratio of the Sb element is that In-Sb ratio is continuously increased due to continuous volatilization of the Sb element In the crystal growth process, so that In-Sb deviates from the molar ratio of 1:1 to generate twin crystals or dislocation, and Sb element added In a hearth is more than In element, so that In-Sb deviation from the molar ratio of 1:1 is controlled within an error range In the InSb crystal growth process.

Setting gas pressure and flow rate in the hearth, controlling the gas pressure in the hearth to be more than or equal to 1.05 atmospheric pressure like filling hydrogen in the hearth, and controlling the gas flow rate to be more than or equal to 1L/min.

The wall temperature of the cold chamber is heated to 100-500 ℃ to reduce the deposition path, and the Sb evaporation rate increases exponentially with the temperature, so that the temperature is prevented from being too high in the melting process. The raw material in the high-purity quartz crucible is melted by resistance or induction heating, and then the seed crystal 1 is inserted into the surface of the raw material melt for fusion, wherein the temperature is controlled well at the moment, so that the phenomenon that the dislocation is formed by the impact of the temperature when the seed crystal 1 contacts the liquid level of the raw material melt, and the dislocation extends to a newly grown crystal along with the growth of the InSb crystal is avoided.

And adjusting the temperature field, slowly lifting the seed crystal upwards and controlling the crystal pulling speed, the crystal rotating speed and the crucible rotating speed. The similarity between the cross section profile of the grown InSb crystal and the circle is larger than a threshold value so as to reduce the plane size of the crystal, thereby reducing the different thermal stress difference of each point when the crystal grows in the radial direction.

The process of crystal growth comprises three stages of shouldering, equal diameter and ending. The growth interface is controlled to be a slightly convex interface in the crystal growth process, and the thermal stress is reduced as much as possible. In the shouldering stage, raw materials of In and Sb elements are evaporated In a hearth, an InSb crystal is gradually grown at the bottom of a seed crystal 1, the diameter of the crystal is always kept to grow according to a certain angle, the shouldering angle is controlled within the range of 5-15 degrees through optimizing parameters such as the pulling speed, the rotating speed and the temperature gradient, the shouldering angle is floated to be less than or equal to +/-5 degrees, the diameter of the cross section of the crystal growth is continuously increased until the diameter is equal to two inches, at the moment, a shouldering stage InSb crystal 2 shown In figure 2 is formed at the lower part of the seed crystal 1, the shouldering stage is ended, and the equal-diameter stage is started; in the isometric stage, the stable growth condition is kept as much as possible, the diameter angle of the crystal is ensured to float less than or equal to +/-5 degrees, a section of InSb crystal which is approximately cylindrical in shape is formed, the diameter of the grown InSb crystal is controlled to be equal to two inches until the length of the grown cylindrical crystal meets the length requirement of the crystal to be prepared, the InSb crystal 3 in the isometric stage shown in figure 2 is formed at the lower part of the InSb crystal 2 in the shoulder stage, the isometric stage is finished, and the ending stage is started; in the ending stage, the diameter of the crystal needs to be slowly heated, the ending angle is-5 to-20 degrees, the ending angle floats to be less than or equal to +/-5 degrees, the diameter of a cylinder of the InSb crystal slowly decreases and finally gradually decreases to a point, the InSb crystal 4 in the ending stage shown in figure 2 is formed at the lower part of the InSb crystal 3 in the equal-diameter stage, and the ending stage is finished. Then the indium antimonide InSb crystal is separated from the melt, thermal shock is minimized, and the growth of the large-size <211> crystal orientation low dislocation density indium antimonide InSb crystal is completed.

Large size grown using the above examples<211>The crystal orientation low dislocation density indium antimonide InSb crystal mainly reduces the dislocation density of the seed crystal 1 through a specific seed crystal 1 preparation process, controls the shape and the angle of the crystal In the crystal growth process and an In-Sb ratio control process, and finally can greatly reduce the large size and the large size<211>Dislocation density of InSb crystal in crystal orientation, so that the diameter is more than or equal to 2 inches<211>The dislocation density of the InSb crystal in the crystal orientation can be controlled to be less than or equal to 10cm^-2The method greatly improves the quality of the InSb material, avoids dislocation defects caused by dislocation genetic effect, minimizes the influence of thermal stress, and simultaneously ensures that the In-Sb ratio is kept at a proper proportion. Finally, the performance of the subsequently prepared InSb infrared detector is greatly improved.

The key of the embodiment of the invention is that:

1. <211> crystal orientation InSb seed crystal is inserted into the surface of the melt for fusion welding, and the crystal pulling speed, the rotating speed and the crucible rotating speed are controlled so that the cross section profile of the InSb crystal is as close to a circle as possible.

2. The shouldering angle in the crystal growth process is controlled in three stages, namely a shouldering stage, an equal-diameter stage and a final stage, and the shouldering angle, the equal-diameter stage and the final stage are controlled according to the angle and the angle floating in the specification. This innovation is separate from the control crystal cross-sectional profile above.

3. Filling hydrogen into the hearth, controlling the gas pressure in the hearth to be more than or equal to 1.05 atmospheric pressure, the gas flow rate to be more than or equal to 1L/min, and heating the wall temperature of the cold chamber to 100-500 ℃.

4. Will satisfy In: sb is 1: raw materials with the molar ratio of 1.01-1.1 are loaded into a hearth.

5. And in the crystal growth process, controlling the growth interface to be a slightly convex interface.

6. <211> preparation of low dislocation seed.

In a second aspect, the present invention provides a large-sized display device<211>Crystal orientation low dislocation density indium antimonide InSb crystal, said large size<211>The crystal orientation low dislocation density indium antimonide InSb crystal is prepared by the method as described in any one of the embodiments of the first aspect<211>Dislocation density of crystal orientation low dislocation density indium antimonide InSb crystal is less than or equal to 10cm^-2。

The large-size <211> crystal orientation low-dislocation-density indium antimonide InSb crystal prepared by the technical scheme has small dislocation density and proper In-Sb ratio, and the performance of the InSb infrared detector prepared by the InSb crystal can be greatly improved.

It should be noted that the above-mentioned embodiments are merely preferred embodiments of the present invention, and the present invention is not limited thereto, and those skilled in the art can make various modifications and changes, and various embodiments can be freely combined. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

It should be noted that well-known methods, structures and techniques have not been shown in detail in the description of the specification in order not to obscure the understanding of this description.