阅读说明：本技术 加载l型枝节线的hmcsiw双带通滤波器 (HMCSIW double-band-pass filter loaded with L-shaped branch lines ) 是由 许锋 张笑 于 2021-08-09 设计创作，主要内容包括：本发明是加载L型枝节线的HMCSIW双带通滤波器,以HMCSIW作为基础传输线,包括介质基板以及设置在介质基板上表面的顶层金属层和设置在所述介质基板下表面的底层金属层,在介质基板的顶层金属层上刻蚀数个U型缝隙,实现宽频带的母滤波器,且在顶层金属层的宽边加载两条L型枝节线,两条L型枝节线之间的距离用于产生传输零点,在介质基板的底层金属层刻蚀两组渐变矩形槽,分为位于输入输出端口的过渡区域,拓宽阻带带宽。本发明首先在HMCSIW的上表面引入三个U缝隙实现宽频带的母滤波器,接着通过两个L型的枝节线将源和负载进行耦合,产生传输零点,将母通带分裂成两个子通带,最终构建一款双通带滤波器。(The invention relates to an HMCSIW double-band-pass filter loaded with L-shaped branch lines, which takes HMCSIW as a basic transmission line and comprises a dielectric substrate, a top metal layer arranged on the upper surface of the dielectric substrate and a bottom metal layer arranged on the lower surface of the dielectric substrate, wherein a plurality of U-shaped gaps are etched on the top metal layer of the dielectric substrate to realize a broadband mother filter, two L-shaped branch lines are loaded on the wide edge of the top metal layer, the distance between the two L-shaped branch lines is used for generating a transmission zero point, two groups of gradually-changed rectangular grooves are etched on the bottom metal layer of the dielectric substrate and divided into a transition region positioned at an input port and an output port, and the bandwidth of a stop band is widened. According to the invention, three U-shaped gaps are introduced into the upper surface of HMCSIW to realize a wideband mother filter, then a source and a load are coupled through two L-shaped branch lines to generate a transmission zero point, the mother passband is split into two sub-passbands, and finally a dual-passband filter is constructed.)

1. The utility model provides a load HMCSIW double-band pass filter of L type minor matters line, uses HMCSIW as basic transmission line, includes dielectric substrate (6) and sets up top metal level (5) on dielectric substrate (6) upper surface and setting are in bottom metal level (7) of dielectric substrate (6) lower surface etch several U type EBG structure on top metal level (5) of dielectric substrate (6) and realize the female filter of broadband, two L type minor matters lines (4) are loaded to the broadside of top metal level (5) of dielectric substrate (6), and have the distance between two L type minor matters lines (4) and be used for producing transmission zero.

2. The HMCSIW dual bandpass filter loaded with L-branch lines of claim 1, wherein: and a gradually-changed rectangular groove (3) is etched in a position, close to a feed port, in a bottom metal layer (7) of the dielectric substrate (6), two microstrip lines are arranged on the upper surface of the dielectric substrate (6) and are respectively used as an input end and an output end of the filter, and the two microstrip lines are respectively connected with the HMCSIW through a trapezoid transition structure.

3. The HMCSIW dual bandpass filter loaded with L-branch lines of claim 1, wherein: the length of each L-shaped branch line (4) is 18-20mm, the width of each L-shaped branch line (4) is 4-5mm, and the coupling distance between the two L-shaped branch lines (4) is adjusted to be 0.2-0.4 mm.

4. The HMCSIW dual bandpass filter loaded with L-branch lines of claim 1, wherein: the U-shaped EBG structure (2) is characterized in that the groove height of each U-shaped EBG structure (2) is 3-4mm, the groove width is 1-3mm, and the groove gap width is 0.1-0.3 mm.

5. The HMCSIW dual bandpass filter loaded with L-branch lines of claim 4, wherein: the number of the U-shaped EBG structures (2) is three.

6. The HMCSIW dual bandpass filter loaded with L-branch lines of claim 1, wherein: the impedance of each microstrip line is 50 ohms.

7. The HMCSIW dual bandpass filter loaded with L-branch lines of claim 1, wherein: the periodic quarter-wave comb-shaped branch lines (1) are arranged on the upper surface and the lower surface of the dielectric substrate (6).

Technical Field

The invention belongs to the technical field of microwaves, particularly relates to an HMCSIW double-bandpass filter loaded with L-shaped branch lines, and particularly relates to a source and load coupled double-bandpass filter.

Background

The continuous development of modern communication technology puts higher and higher requirements on various indexes of a communication circuit, and the conventional microwave circuits such as rectangular waveguides, microstrip lines and the like are difficult to reach the promises of people for future novel microwave circuits, so that the research on the novel microwave circuits with high transmission performance, simple structure and compact size is significant. SIW (substrate integrated waveguide) is a novel waveguide structure widely used in microwave circuits in recent years, but since it requires metal drilling, when the diameter of the metal hole is small, the process is prone to be deviated, which greatly affects the precision of the SIW device. The CSIW (quasi-comb-line substrate integrated waveguide) is a product derived from the SIW, inherits most characteristics of the SIW, and the quarter-wavelength open-circuit comb line is used for overcoming the difficulties that a metallized via hole in the SIW is difficult to process and cannot be integrated with an active device, thereby further widening the application range of microwave elements.

In modern wireless communication, various communication protocols are in succession, and limited spectrum resources are extremely precious, so that it is urgent to improve the utilization rate of the spectrum. The present invention relates to a microwave device, and more particularly to a microwave device, which can be used in a wide range of communication systems, and has the advantages of small size, low loss, low cost, and easy integration.

In recent years, many CSIW-based antennas have emerged, but little research has been devoted to coupling circuits, particularly dual-passband filters. For the dual-band implementation, transmission zero points can be introduced for frequency band separation. The acquisition of the transmission zero is realized by the coupling of a source and a load or the cross coupling between non-adjacent resonators, however, the methods introduce special topological structures, which results in that the structure of the filters is too complex or the processing cost is too high in the design process. Therefore, a dual-band filter with a simple and compact structure and easy processing is a subject to be researched.

Disclosure of Invention

In order to solve the technical problems, the invention provides an HMCSIW dual-band-pass filter loaded with L-shaped branch lines, which realizes frequency band separation by introducing transmission zero points to finally form a dual-band-pass filter, and is an attempt for designing the dual-band-pass filter by using the HMCSIW in the industry.

In order to achieve the purpose, the invention is realized by the following technical scheme:

the invention relates to an HMCSIW double-band-pass filter loaded with L-shaped branch lines, which realizes the double-band HMCSIW filter by using U-shaped slit perturbation and L-shaped branch line coupling source and load, and introduces a gradual change rectangular groove for further optimizing out-of-band characteristics and widening stop band bandwidth.

The HMCSIW double-bandpass filter takes HMCSIW as a basic transmission line and comprises a dielectric substrate, a top metal layer arranged on the upper surface of the dielectric substrate and a bottom metal layer arranged on the lower surface of the dielectric substrate.

The upper surface and the lower surface of the medium substrate are provided with periodic quarter-wavelength comb-shaped branch lines and two microstrip lines, and the two microstrip lines are respectively inserted into the HMCSIW waveguide through a trapezoid transition structure and respectively used as input and output ports.

A plurality of U-shaped gaps are etched on a top metal layer of a dielectric substrate to achieve a wide-band mother filter, two L-shaped branch lines are loaded on the wide edge of the top metal layer, the coupling distance between the two L-shaped branch lines is adjusted to be 0.2-0.4mm, a source and a load are coupled to generate transmission zeros to achieve frequency band separation, and the distance between the two L-shaped branch lines is used for generating the transmission zeros.

And etching two groups of gradually-changed rectangular grooves on the bottom metal layer of the dielectric substrate, wherein the two groups of gradually-changed rectangular grooves are respectively positioned in the transition areas of the input and output ports, and the stop band bandwidth is widened.

The invention is further improved in that: the length of each L-shaped branch line is 18-20mm, the width of each L-shaped branch line is 4-5mm, the size of each L-shaped branch line and the distance between two L-shaped branch lines can influence the coupling effect of a source and a load, and therefore the position of a transmission zero point is influenced, the groove height of each U-shaped EBG structure is 3-4mm, the groove width is 1-3mm, and the groove gap width is 0.1-0.3 mm. The size and period of the U-shaped slot, i.e., EBG, is determined as needed, and the size of the U-shaped slot and the distance between adjacent U-shaped slots affect the performance of the mother filter.

The invention is further improved in that: the impedance of each microstrip line is 50 ohms.

The invention has the beneficial effects that: the method comprises the steps of firstly introducing three U-shaped gaps on the upper surface of HMCSIW to realize a wideband mother filter, then coupling a source and a load through two L-shaped branch lines to generate a transmission zero point, splitting the mother passband into two sub-passbands, and finally constructing the dual-passband filter; in the process, a gradual change groove is loaded at the feed position, the stop band bandwidth is widened, the out-of-band rejection performance of the dual-passband filter is further optimized, and an expected result is obtained.

The invention has the characteristics of novel structure, compact size, simple processing and the like.

Drawings

Fig. 1 is a schematic top view of the HMCSIW mother filter structure of the present invention.

Fig. 2 is a schematic structural diagram of the HMCSIW dual-bandpass filter loaded with L-branch lines according to the present invention.

Fig. 3 is a three-dimensional analysis diagram of the HMCSIW dual-band-pass filter loaded with L-type branch lines according to the present invention.

Fig. 4 is a simulation structure diagram of the S parameter of the HMCSIW dual-band-pass filter loaded with L-branch lines according to the present invention.

Fig. 5 is a graph comparing the S-parameter curves of HMCSIW dual bandpass filters of the present invention with and without loading tapered rectangular slots.

Fig. 6 is a comparison of the S-parameter curves for HMCSIW dual bandpass filters of the present invention with and without loading tapered rectangular slots.

In the figure: 1-comb branch lines; 2-U type EBG structure; 3-gradual change rectangular groove; 4-L-shaped branch lines; 5-top metal layer; 6-a dielectric substrate; 7-bottom metal layer; 8-microstrip line

Detailed Description

In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the embodiments of the invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary.

The invention discloses an HMCSIW double-band-pass filter loaded with L-shaped branch lines, which adopts a frequency band separation technology to realize double bands. Firstly, designing a wideband mother filter, then introducing L-shaped branch lines, coupling a source and a load to generate a transmission zero, splitting the mother passband into two sub-passbands to form a dual-passband, wherein the length of each L-shaped branch line 4 is 18-20mm, the width of each L-shaped branch line 4 is 4-5mm, the coupling distance between the two L-shaped branch lines 4 is adjusted between 0.2-0.4mm to determine the position of the transmission zero, and in addition, in order to improve the performance, a gradually-changed rectangular structure is etched in a transition region of a micro-strip connection HMCSIW.

The wide-band mother filter mainly comprises an HMCSIW structure and three U-shaped EBGs, the structure is shown in figure 1,

three symmetrical U-shaped grooves are etched on the top metal layer 5 of the HMCSIW, the ultra-wideband filter is finally formed by utilizing transmission zero points generated by the U-shaped grooves, the period of the U-shaped grooves is 5mm, the groove height of each U-shaped EBG structure 2 is 3-4mm, the groove width is 1-3mm, the groove gap width is 0.1-0.3mm,

subsequently, a source and load coupling structure is introduced. The source and load coupling is realized by adopting a microstrip line with L-shaped open-circuit branches, and the specific implementation mode is as follows: two L-shaped open-circuit branch lines are respectively introduced at the positions close to the input and output ports, a gap is arranged in the middle, and finally a coupling path is realized. The dual-passband filter provided by the experiment realizes source and load coupling by directly connecting two feed ends, namely the microstrip line 8, so that the structure is simpler and more compact and the filter is easy to process. Two L-shaped branch lines are the key for realizing the double-pass frequency band, and are modeled and analyzed according to the model structure.

The overall planar structure is shown in fig. 2, and mainly includes: the antenna comprises an input and output feed structure, a gradually-changed rectangular groove, three U-shaped grooves, two L-shaped open-circuit branch lines and HMCSIW. The filter design starts with a full-mode CSIW structure with a feed port consisting of 50 Ω microstrip lines 8. The method is characterized in that a gradually-changed rectangular groove is etched in a trapezoidal transition region from a microstrip line to HMCSIW to improve impedance matching, DGS is a slow-wave structure and has certain constraint on electromagnetic waves, the length of the transition band can be reduced to a certain extent, a U-shaped groove is used for constructing a broadband filter, two L-shaped open short-circuit wires are used for realizing coupling between a source and a load, a transmission zero point is introduced, a mother passband is split into two sub-passbands, and finally the double-passband filter is realized, a specific three-dimensional structure diagram is shown in 3, the upper black surface and the lower black surface in the diagram represent metal layers, the middle white part represents a dielectric substrate, the periodic quarter-wavelength comb-shaped minor-wires are arranged on the upper surface and the lower surface of the dielectric substrate 6, and the distance between the quarter-wavelength comb-shaped minor-wires is determined according to needs.

The technical scheme of the invention is further explained in detail by the following specific embodiments:

in the embodiment of the invention, the used substrate is Rogers (RT/Duriod)5880, the dielectric constant of the substrate is 2.2, the thickness of the substrate is 0.508 millimeter, the loss tangent of the substrate is 0.0009, the impedance of two microstrip lines is 50 ohms, and the two microstrip lines are respectively used as the input end and the output end of the filter.

Example 1

The structure of the above design was modeled and simulated using HFSS, and fig. 4 illustrates the S-parameter simulation results of the HMCSIW dual-bandpass filter. Due to the introduction of the L-shaped branch line, a transmission zero is generated at the position of 11.45GHz in the original mother pass band and is divided into two sub-pass bands, meanwhile, five resonance points in the mother filter are distributed into the two sub-pass bands, the first pass band is provided with three resonance points, the second pass band is provided with two resonance points, the first pass band of the double-pass-band filter designed by the experiment ranges from 8.08GHz to 10.54GHz, the center frequency is 9.4GHz, the relative bandwidth is about 26.2%, the second pass band ranges from 12.1GHz to 13.6GHz, the center frequency is 12.8GHz, and the relative bandwidth is about 11.7%. The return loss of the two pass frequency bands is better than 12dB, the insertion loss is better than 1.5dB, and the performance is good.

Fig. 5 and 6 show the comparison of S parameters of the dual-passband filter with or without a loading tapered rectangular slot, and the filter with the loading tapered slot can better suppress out-of-band signals at the low frequency of the first passband, because the DGS has a single-pole stopband characteristic and can generate resonance at a specific frequency point, thereby obtaining a better out-of-band suppression characteristic and optimizing the performance of the whole filter.

The invention uses a frequency band separation structure, firstly designs a wideband mother filter, then couples a source and a load through two L-shaped branch lines to generate a transmission zero point, splits the mother passband into two sub-passbands, and finally constructs the dual-passband filter. In the process, a gradual change groove is loaded at the feed position, the single-pole stop band characteristic of DGS is utilized, the stop band bandwidth is widened, and the out-of-band rejection characteristic of the filter is further optimized.

The invention has novel structure, easy processing and good performance.

The above description is only an embodiment of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.