阅读说明：本技术 中心结构制备方法、x射线波带片制备方法及x射线波带片 (Center structure preparation method, X-ray zone plate preparation method and X-ray zone plate ) 是由 文庆涛 卢维尔 夏洋 于 2020-04-27 设计创作，主要内容包括：本发明实施例公开了一种中心结构制备方法及X射线波带片制备方法,其中,中心结构制备方法包括：去除目标光纤的涂覆层,得到原始中心结构,原始中心结构包括原始纤芯和原始包层；将原始中心结构拉伸至预设尺寸,得到圆台形状的处理中心结构,预设尺寸包括第一预设直径、第二预设直径和预设长度,第一预设直径小于第二预设直径；对处理中心结构进行切割,得到具有预设尺寸的目标中心结构。本发明实施例获得预设尺寸的中心结构的方式,由于无需采用模具,因此,解决了由于模具带来的问题,实现了灵活和高效的制备直径为预设尺寸和表面粗糙度在纳米级的中心结构。(The embodiment of the invention discloses a central structure preparation method and an X-ray zone plate preparation method, wherein the central structure preparation method comprises the following steps: removing a coating layer of the target optical fiber to obtain an original central structure, wherein the original central structure comprises an original fiber core and an original cladding; stretching the original central structure to a preset size to obtain a processing central structure in a shape of a circular truncated cone, wherein the preset size comprises a first preset diameter, a second preset diameter and a preset length, and the first preset diameter is smaller than the second preset diameter; and cutting the processing central structure to obtain a target central structure with preset size. According to the embodiment of the invention, the mode of obtaining the central structure with the preset size is adopted, and a mould is not needed, so that the problems caused by the mould are solved, and the flexible and efficient preparation of the central structure with the diameter of the preset size and the surface roughness of the nanometer level is realized.)

1. A method of preparing a central structure of an X-ray zone plate, comprising:

removing a coating layer of a target optical fiber to obtain an original central structure, wherein the original central structure comprises an original fiber core and an original cladding;

stretching the original central structure to a preset size to obtain a processing central structure in a shape of a circular truncated cone, wherein the preset size comprises a first preset diameter, a second preset diameter and a preset length, and the first preset diameter is smaller than the second preset diameter;

and cutting the processing central structure to obtain the target central structure with the preset size.

2. The method for preparing a central structure of an X-ray zone plate according to claim 1, wherein the removing the coating layer of the target optical fiber to obtain the original central structure further comprises:

and cleaning the original optical fiber to obtain the target optical fiber.

3. The method for preparing a central structure of an X-ray zone plate according to claim 1 or 2, wherein the removing of the coating layer of the target optical fiber to obtain an original central structure comprises:

and removing the coating layer of the target optical fiber by adopting an optical fiber coating layer stripping platform to obtain the original central structure.

4. The method for preparing a central structure of an X-ray zone plate according to claim 3, wherein the removing the coating layer of the target optical fiber by using the optical fiber coating layer stripping platform to obtain the original central structure comprises:

and removing the coating layer in the preset area on the target optical fiber by using an optical fiber coating layer stripping platform to obtain the original central structure.

5. The method for preparing a central structure of an X-ray zone plate according to claim 1 or 2, wherein the stretching the original central structure to a preset size to obtain a truncated cone shaped processing central structure comprises:

will the one end of original central structure is fixed on the base, to the target pulling force is applyed to the base to under predetermineeing tensile parameter, adopt super steady plasma heating equipment follow the other end of original central structure will original central structure is tensile to predetermineeing the size, obtains the processing central structure of round platform shape, predetermine tensile parameter and include super steady plasma heating equipment's mode and super steady plasma heating equipment's working parameter, super steady plasma heating equipment's working parameter includes super steady plasma heating equipment's power super steady plasma heating equipment's tensile rate and super steady plasma heating equipment's tensile force.

6. The method as claimed in claim 5, wherein the power of the plasma heating apparatus is 450-800W, and the stretching rate of the plasma heating apparatus is 40-110 μm/s; the target tension is 1-50N.

7. The method of claim 5, wherein the operating mode of the ultrastable plasma warming apparatus is a one-way tapering mode.

8. The method for preparing a central structure of an X-ray zone plate according to claim 1 or 2, wherein the diameter of the target optical fiber is 80-400 μ ι η, and the first and second preset diameters are 25-200 μ ι η.

9. A method of making an X-ray zone plate, comprising:

preparing a target core structure, the target core structure being prepared by the method of any one of claims 1-8;

alternately depositing a thin film ring belt structure on the surface of the target central structure by adopting an atomic layer deposition technology to obtain an original zone plate;

and depositing a protective layer on the surface of the original zone plate, and cutting the original zone plate by adopting a focused ion beam micro-nano processing technology to obtain a target zone plate.

10. The method of claim 9, wherein the alternating deposition of thin film zone structures on the surface of the target-centric structure using atomic layer deposition techniques resulting in a raw zone plate comprises:

and suspending and fixing the target central structure in a cavity for atomic layer deposition, and after executing to-be-deposited operation, alternately depositing a thin film annulus structure on the surface of the target central structure to obtain an original zone plate, wherein the to-be-deposited operation comprises vacuumizing, heating and introducing nitrogen.

11. The method for preparing an X-ray zone plate according to claim 9, wherein the step of depositing a protective layer on the surface of the original zone plate and cutting the original zone plate by using a focused ion beam micro-nano processing technology to obtain a target zone plate comprises:

depositing a protective layer on the surface of the original zone plate to obtain a processing zone plate;

fixing the processing zone plate into a focused ion beam system and adjusting focus;

and under preset processing parameters, processing the processing zone plate to a preset thickness by adopting a large beam cutting and small beam surface polishing method to obtain a target zone plate, wherein the preset processing parameters comprise acceleration voltage and ion beam current.

12. A method of manufacturing an X-ray zone plate according to any of claims 9-11, wherein the material of the thin film zone structure comprises oxides, nitrides and elemental metals.

13. The method of claim 12, wherein the oxide comprises any two of aluminum oxide, hafnium oxide, tantalum oxide, and silicon oxide; the nitride includes any two of aluminum nitride, silicon nitride and gallium nitride; the metal elementary substance comprises any two of iridium, platinum, copper and palladium.

14. An X-ray zone plate comprising a target-centric structure produced by the method according to any one of claims 1 to 8.

Technical Field

The embodiment of the invention relates to the technical field of microelectronics and optics, in particular to a method for preparing a central structure of an X-ray zone plate, a method for preparing the X-ray zone plate and the X-ray zone plate.

Background

Since the discovery of X-ray, the X-ray microscopic imaging technology can be used for observing and detecting the three-dimensional structure of the interior of a thicker substance due to the advantages of short wavelength, large penetration depth and the like. This makes X-ray microscopic imaging techniques have wide application in the fields of biology, medicine, materials, and the like. The X-ray Fresnel zone plate (X-ray zone plate for short) is a core element of the X-ray microscopic imaging technology and can realize nanoscale resolution imaging.

The working principle of the X-ray zone plate is as follows: imaging according to the light diffraction principle, and utilizing the absorption coefficient of adjacent wave band materials to light to enable adjacent emergent light to generate pi bit phase difference, so that the diffraction enhancement effect of the emergent light occurs at the focus. The imaging resolution of the X-ray zone plate is determined by the outermost ring width δ, where δ is 0.61-1.22 Δ R, Δ R representing the zone outermost ring thickness. If higher imaging resolution is required, the X-ray zone plate needs to have sufficient thickness. Therefore, the preparation of the X-ray zone plate with a large height-width ratio has very important significance. In order to prepare an X-ray zone plate with a large aspect ratio, an Atomic Layer Deposition (ALD) technique is commonly used to deposit a multi-Layer thin film and perform focused ion beam slicing. One of the key issues in the fabrication of X-ray zone plates using atomic layer deposition techniques is the selection and fabrication of the central structure of the X-ray zone plate, since the X-ray zone plate has extremely high requirements for the central structure. The requirements of the X-ray zone plate on the central structure include symmetrical integral shape, circular truncated cone shape, good uniformity and nano-level surface roughness. The target is usually prepared into the central structure of the X-ray zone plate by methods such as drawing die or liquid filling.

However, it has been found that the prior art has at least the following problems, in particular: since the mold is fixed in size and the inner wall surface of the mold is easily abraded in the process of preparing the central structure of the X-ray zone plate, difficulties may be caused in selection and control of the size and surface roughness of the central structure.

Disclosure of Invention

The embodiment of the invention provides a method for preparing a central structure of an X-ray zone plate, a method for preparing the X-ray zone plate and the X-ray zone plate, which aim to flexibly and efficiently prepare the central structure with the diameter as a preset size and the surface roughness at the nano level.

In a first aspect, an embodiment of the present invention provides a method for preparing a central structure of an X-ray zone plate, where the method includes:

removing a coating layer of a target optical fiber to obtain an original central structure, wherein the original central structure comprises an original fiber core and an original cladding;

stretching the original central structure to a preset size to obtain a processing central structure in a shape of a circular truncated cone, wherein the preset size comprises a first preset diameter, a second preset diameter and a preset length, and the first preset diameter is smaller than the second preset diameter;

and cutting the processing center structure to obtain a target center structure.

Further, before the removing the coating layer of the target optical fiber and obtaining the original central structure, the method further includes:

and cleaning the original optical fiber to obtain the target optical fiber.

Further, the removing the coating layer of the target optical fiber to obtain the original central structure includes:

and removing the coating layer of the target optical fiber by adopting an optical fiber coating layer stripping platform to obtain the original central structure.

Further, the step of stretching the original central structure to a preset size to obtain a processing central structure in a shape of a circular truncated cone includes:

will the one end of original central structure is fixed on the base, to the target pulling force is applyed to the base to under predetermineeing tensile parameter, adopt super steady plasma heating equipment follow the other end of original central structure will original central structure is tensile to predetermineeing the size, obtains the processing central structure of round platform shape, predetermine tensile parameter and include super steady plasma heating equipment's mode and super steady plasma heating equipment's working parameter, super steady plasma heating equipment's working parameter includes super steady plasma heating equipment's power super steady plasma heating equipment's tensile rate and super steady plasma heating equipment's tensile force.

Further, the power of the ultra-stable plasma heating equipment is 450-; the target tension is 1-50N.

Further, the working mode of the ultra-stable plasma heating equipment is a one-way tapering mode.

Further, the diameter of the target optical fiber is 80-400 μm, and the first preset diameter and the second preset diameter are 25-200 μm.

In a second aspect, an embodiment of the present invention further provides a method for preparing an X-ray zone plate, including:

preparing a target central structure, wherein the target central structure is prepared by the method of the first aspect of the embodiment of the invention;

alternately depositing a thin film ring belt structure on the surface of the target central structure by adopting an atomic layer deposition technology to obtain an original zone plate;

and depositing a protective layer on the surface of the original zone plate, and cutting the original zone plate by adopting a focused ion beam micro-nano processing technology to obtain a target zone plate.

Further, the alternately depositing a thin film annulus structure on the surface of the target central structure by using an atomic layer deposition technique to obtain an original zone plate includes:

and suspending and fixing the target central structure in a cavity for atomic layer deposition, and after executing to-be-deposited operation, alternately depositing a thin film annulus structure on the surface of the target central structure to obtain an original zone plate, wherein the to-be-deposited operation comprises vacuumizing, heating and introducing nitrogen.

Further, depositing a protective layer on the surface of the original zone plate, and cutting the original zone plate by adopting a focused ion beam micro-nano processing technology to obtain a target zone plate, including:

depositing a protective layer on the surface of the original zone plate to obtain a processing zone plate;

fixing the processing zone plate into a focused ion beam system and adjusting focus;

and under preset processing parameters, processing the processing zone plate to a preset thickness by adopting a large beam cutting and small beam surface polishing method to obtain a target zone plate, wherein the preset processing parameters comprise acceleration voltage and ion beam current.

Further, the material of the thin film girdle structure comprises an oxide, a nitride and a metal simple substance.

Further, the oxide includes any two of aluminum oxide, hafnium oxide, tantalum oxide and silicon oxide; the nitride includes any two of aluminum nitride, silicon nitride and gallium nitride; the metal elementary substance comprises any two of iridium, platinum, copper and palladium.

In a third aspect, an embodiment of the present invention further provides an X-ray zone plate, including a target central structure, where the target central structure is the target central structure prepared by the method in the first aspect of the embodiment of the present invention.

According to the embodiment of the invention, the original central structure is obtained by removing the coating layer of the target optical fiber, the original central structure is stretched to the preset size to obtain the processing central structure in the shape of a circular truncated cone, and the processing central structure is cut to obtain the target central structure with the preset size. According to the mode for obtaining the central structure with the preset size, a mould is not needed, so that the problem of selection and control of the size and the surface roughness of the central structure caused by the fact that the mould model is fixed and the surface of the inner wall of the mould is easy to wear in the prior art is solved, and the flexible and efficient preparation of the central structure with the preset size and the surface roughness at the nanometer level is realized.

Drawings

FIG. 1 is a method of manufacturing a center structure of an X-ray zone plate according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a target optical fiber according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of an original core structure in an embodiment of the present invention;

FIG. 4 is another method of fabricating a center structure of an X-ray zone plate according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a method of fabricating a central structure of an X-ray zone plate in an embodiment of the present invention;

FIG. 6 is an optical microscope image of a target center structure in an embodiment of the invention;

FIG. 7 is an optical microscope image of another target center structure in an embodiment of the present invention;

FIG. 8 is an optical microscope image of a further target core structure in an embodiment of the invention;

FIG. 9 is an optical microscope image of a further target central structure in an embodiment of the invention;

FIG. 10 is an optical microscope image of a further target central structure in an embodiment of the invention;

FIG. 11 is an optical microscope image of a further target central structure in an embodiment of the invention;

FIG. 12 is a flow chart of a method of making an X-ray zone plate in an embodiment of the present invention;

FIG. 13 is a flow chart of another method of making an X-ray zone plate in an embodiment of the present invention;

FIG. 14 is a schematic illustration of a method of making an X-ray zone plate in an embodiment of the invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and not restrictive thereof, and that various features described in the embodiments may be combined to form multiple alternatives. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a flowchart of a method for manufacturing a central structure of an X-ray zone plate according to an embodiment of the present invention, which is applicable to flexibly and efficiently manufacturing a central structure having a diameter of a predetermined size and a surface roughness at a nano level. The method may be performed by a central structure preparation apparatus of an X-ray zone plate. As shown in fig. 1, the method specifically comprises the following steps:

and 110, removing a coating layer of the target optical fiber to obtain an original central structure, wherein the original central structure comprises an original fiber core and an original cladding.

In an embodiment of the present invention, as shown in fig. 2, a schematic diagram of a target optical fiber is provided. In fig. 2, the original core 100, the original cladding 101 and the coating layer 11 are shown from inside to outside, respectively, i.e. the target optical fiber may specifically include the original core 100, the original cladding 101 and the coating layer 11. Wherein the original core 100 and the original cladding 101 have different refractive indices and the original cladding 101 has a refractive index greater than the refractive index of the original core 100. When the optical signal propagates in the original core 100, the refractive index of the original cladding 101 is greater than that of the original fiber layer 100, and therefore, the optical signal is totally reflected at the interface between the original core 100 and the original cladding 101. The coating layer 11 may serve to protect the original core 100 and the original cladding 101 from external stress. The original core 100 and the original cladding 101 described above belong to the original central structure 10, i.e. the original central structure 10 may comprise the original core 100 and the original cladding 101. As shown in fig. 3, a schematic diagram of the original central structure is given.

In order to obtain a target central structure satisfying the conditions, it is necessary to remove the coating layer of the target optical fiber to obtain an original central structure. Optionally, the optical fiber coating layer stripping platform may be used to remove the coating layer of the target optical fiber, so as to obtain the original central structure. It will be appreciated that the original central structure is the target fiber with the coating removed. The coating layer of the target optical fiber may be removed entirely or partially, and may be set according to actual conditions, which is not limited specifically herein. Optionally, the coating layer located in the preset region on the target optical fiber may be removed to obtain the original central structure. Namely, part of the coating layer of the target optical fiber can be removed, and the rest coating layer of the target optical fiber is reserved. The predetermined region may be a region composed of first positions and second positions, wherein the first positions may be one end of the target optical fiber, and the second positions may be positions spaced apart from the same end of the target optical fiber by a predetermined distance.

And 120, stretching the original central structure to a preset size to obtain a processing central structure in the shape of a circular truncated cone, wherein the preset size comprises a first preset diameter, a second preset diameter and a preset length, and the first preset diameter is smaller than the second preset diameter.

In the embodiment of the present invention, the original central structure may be stretched to a predetermined size to obtain a processing central structure in the shape of a circular truncated cone, which can be understood as follows: the preset stretching parameters can comprise the working mode of the ultra-stable plasma heating equipment and the working parameters of the ultra-stable plasma heating equipment. The working mode of the over-temperature plasma heating equipment can comprise a one-way tapered working mode. The operating parameters of the hyperstable plasma heating apparatus may include the power of the hyperstable plasma heating apparatus, the stretch rate of the hyperstable plasma heating apparatus, and the stretch force of the hyperstable plasma heating apparatus. It should be noted that, because the requirements of the X-ray zone plate for the central structure include that the overall shape is symmetrical and in a circular truncated cone shape, the uniformity is good, and the surface roughness is in a nanometer level, for the processing central structure obtained by the ultrastable plasma heating device, it is mainly concerned whether the overall shape is smooth and symmetrical, whether the processing central structure is in a circular truncated cone shape, whether the diameter is uniform, and whether the taper meets the requirements. Factors influencing the diameter uniformity of the central processing structure mainly include plasma temperature, power of ultra-stable plasma heating equipment, stretching speed, stretching force and the like. In addition, the size of the diameter is also affected by the above factors. Based on this, the power, the stretching rate, and the stretching force of the ultra-stable plasma warming apparatus may be set based on the preset sizes. The preset size may include a first preset diameter, a second preset diameter and a preset length, and the first preset diameter and the second preset diameter may be understood as a diameter required by the preset original central structure. The preset length can be understood as the length required by the original preset central structure, and the central structure with the diameter of the first preset diameter, the second preset diameter and the preset length can be used for preparing the X-ray zone plate. The first predetermined diameter is less than the second predetermined diameter. The specific values of the first preset diameter, the second preset diameter and the preset length can be set according to actual conditions, and are not limited specifically herein. Alternatively, the first predetermined diameter and the second predetermined diameter may be 25-200 μm. The working mode of the hyperstable plasma heating equipment can be a one-way taper mode. The power of the ultra-stable plasma heating device can be 450-800W, and the stretching speed of the ultra-stable plasma heating device can be 40-110 μm/s. Further, the power of the ultra-stable plasma warming apparatus may be 550W, and the stretching rate of the ultra-stable plasma warming apparatus may be 80 μm/s.

Under the preset stretching parameters, the original central structure can be stretched to a preset stretching distance to a preset size by adopting ultrastable plasma heating equipment, and the processing central structure in the shape of a circular truncated cone is obtained. It will be appreciated that the diameter of the processing center structure is the first predetermined diameter and the second predetermined diameter. The stretching distance of the hyperstable plasma warming apparatus may be 3 cm.

And 130, cutting the processing center structure to obtain a target center structure with a preset size.

In an embodiment of the present invention, after the processing center structure is obtained, the processing center structure may be cut to obtain a target center structure having a preset size. Specifically, the method comprises the following steps: the target position of the preset processing center structure can be cut by adopting a cutting device to obtain the target center structure. The target position may be a position having a preset length from one end of the stretch of the processing center. The cutting device may include an ultrasonic cutter, a laser cutter, and the like. It will be understood that the processing core is cut at the target position, and the diameter of the processing core is constant before and after the cutting, based on which the diameter of the target core is the same as the diameter of the processing core. Since the diameter of the processing center structure is the first preset diameter and the second preset diameter, the diameter of the target center structure is the first preset diameter and the second preset diameter. The shape of the target central structure is also a circular truncated cone shape, and the first preset diameter and the second preset diameter can be understood as the diameters of two bottom surfaces of the circular truncated cone. It should be noted that the target core structure can be obtained with a taper of 0.2 deg. -1.8 deg.. It will be appreciated that the central structure in the X-ray zone plate prepared as described above using central structures having a diameter of the first predetermined diameter and the second predetermined diameter is the target central structure.

In the above manner of obtaining the central structure with the preset size, since no mold is needed, the problems of selection and control of the size and the surface roughness of the central structure caused by the fixed mold type and the easy abrasion of the inner wall surface of the mold in the prior art are solved, and the following can be understood: because a mould is not needed, the problem that the size of the central structure cannot be selected due to the fact that the model of the mould is fixed and the problem that the size of the central structure is difficult to control due to the fact that the inner wall surface of the mould is prone to abrasion in the prior art do not exist in the technical scheme provided by the embodiment of the invention. Meanwhile, a mould is not needed, so that the problems that the surface of the inner wall of the mould is easy to wear and the surface roughness of the central structure is difficult to select and control due to the contact of the mould and the central structure in the prior art do not exist in the technical scheme provided by the embodiment of the invention.

According to the technical scheme, the original central structure is obtained by removing the coating layer of the target optical fiber, the original central structure is stretched to the preset size, the processing central structure in the shape of a circular truncated cone is obtained, and the processing central structure is cut to obtain the target central structure with the preset size. According to the mode for obtaining the central structure with the preset size, a mould is not needed, so that the problem of selection and control of the size and the surface roughness of the central structure caused by the fact that the mould model is fixed and the surface of the inner wall of the mould is easy to wear in the prior art is solved, and the flexible and efficient preparation of the central structure with the preset size and the surface roughness at the nanometer level is realized.

Optionally, on the basis of the above technical solution, before removing the coating layer of the target optical fiber to obtain the original central structure, the method may further include: and cleaning the original optical fiber to obtain the target optical fiber.

In the embodiment of the present invention, in order to ensure the surface of the target optical fiber to be clean, the original optical fiber may be cleaned, specifically: the original optical fiber may be ultrasonically cleaned with organic solvent to remove oil stain and other impurities from the surface of the original optical fiber, and the organic solvent may include acetone, ethanol, etc. And can be repeatedly cleaned by ultrasonic cleaning with deionized water. The number of times of washing with the organic solvent and the length of time of each washing may be set according to practical circumstances, and is not particularly limited herein. The number of times of deionized water cleaning and the time length of each cleaning can also be set according to actual conditions, and is not particularly limited herein. Optionally, the number of times of washing with the organic solvent may be 3-5, and the time duration of each washing may be 5 min. The number of times of deionized water cleaning can be 3-5, and the time length of each cleaning can be 5 min.

Optionally, on the basis of the above technical solution, removing the coating layer of the target optical fiber to obtain the original central structure, which may specifically include: and removing the coating layer of the target optical fiber by adopting an optical fiber coating layer stripping platform to obtain the original central structure.

In the embodiment of the invention, the coating layer of the target optical fiber can be removed by adopting the optical fiber coating layer stripping platform to obtain the original central structure. The optical fiber coating layer stripping platform can be an LC-Strip optical fiber coating layer stripping platform.

Optionally, on the basis of the above technical scheme, the method for removing the coating layer of the target optical fiber by using the optical fiber coating layer stripping platform to obtain the original central structure specifically includes: and removing the coating layer in the preset area on the target optical fiber by using an optical fiber coating layer stripping platform to obtain the original central structure.

In an embodiment of the present invention, the predetermined region may be a region composed of first positions and second positions, wherein the first positions may be one end of the target optical fiber, and the second positions may be positions spaced apart from the same end of the target optical fiber by a predetermined distance.

Illustratively, the target fiber may be 7cm in length. The second distance from the same end of the target optical fiber may be 5 cm. It can be understood that the length of the target optical fiber from which the coating layer is removed is 5 cm.

Optionally, on the basis of the above technical scheme, the original central structure is stretched to a preset size to obtain a processing central structure in the shape of a circular truncated cone, which may specifically include: fixing one end of an original central structure on a base, applying target tension to the base, stretching the original central structure to a preset size by adopting an ultra-stable plasma heating device under a preset stretching parameter to obtain a circular truncated cone-shaped processing central structure, wherein the preset stretching parameter comprises a working mode of the ultra-stable plasma heating device and a working parameter of the ultra-stable plasma heating device, and the working parameter of the ultra-stable plasma heating device comprises the power of the ultra-stable plasma heating device, the stretching rate of the ultra-stable plasma heating device and the stretching force of the ultra-stable plasma heating device.

In the embodiment of the invention, one end of the original central structure can be fixed on the base, and parameters such as the vertical, horizontal, front-back and pitch angles of the base are adjusted, so that two ends of the original central structure are aligned. Based on this, in order to eliminate the bending caused by the gravity of the original central structure, a target tensile force may be applied to the base. The specific value of the target tension can be set according to actual conditions, and is not particularly limited herein. Alternatively, the target tension may be 1-50N. Further, the target tension may be 10N.

The preset stretching parameters can comprise the working mode of the ultra-stable plasma heating equipment and the working parameters of the ultra-stable plasma heating equipment. The working mode of the over-temperature plasma heating equipment can comprise a one-way tapered working mode. The operating parameters of the hyperstable plasma heating apparatus may include the power of the hyperstable plasma heating apparatus, the stretch rate of the hyperstable plasma heating apparatus, and the stretch force of the hyperstable plasma heating apparatus. Under the preset stretching parameters, the original central structure can be stretched to a preset size by adopting ultra-stable plasma heating equipment, and the processing central structure in the shape of a circular truncated cone is obtained. It will be appreciated that the diameter of the processing center structure is the first predetermined diameter and the second predetermined diameter.

The working parameter of the hyperstable plasma heating equipment is convenient to adjust, so that a central structure with a preset size can be obtained quickly and efficiently. In addition, the working parameter adjustment precision of the hyperstable plasma heating equipment is high, so that the control precision of the size of the central structure is high.

The mode of obtaining the central structure with the preset size by adopting the ultra-stable plasma heating technology does not need to adopt a mould, so that the problem of selection and control of the size and the surface roughness of the central structure caused by the fact that the mould model is fixed and the surface of the inner wall of the mould is easy to wear in the prior art is solved, and the flexible and efficient preparation of the central structure with the preset target size and the surface roughness at the nanometer level is realized.

Optionally, on the basis of the above technical solution, the power of the ultra-stable plasma heating apparatus may be 450-. The target pull force may be 1-50N.

Optionally, on the basis of the above technical scheme, the stretching distance of the hyperstable plasma heating device may be 3 cm.

Optionally, on the basis of the above technical scheme, the operating mode of the hyperstable plasma heating device may be a unidirectional tapering mode.

In the embodiment of the invention, the working mode of the ultra-stable plasma heating equipment can be set to be a one-way tapering mode, and correspondingly, the ultra-stable plasma heating equipment can stretch the original central structure in the one-way tapering mode to obtain the processing central structure in the shape of the circular truncated cone. It will be appreciated that the size and shape of the taper in the one-way taper mode may be set.

Optionally, on the basis of the above technical solution, the diameter of the target optical fiber may be 80-400 μm. The first predetermined diameter and the second predetermined diameter may be 25-200 μm.

Optionally, on the basis of the above technical solution, the taper of the target central structure may be 0.2 ° to 1.8 °.

Optionally, on the basis of the above technical solution, the diameter of the target optical fiber may be 200 μm.

Optionally, on the basis of the above technical solution, the target tension may be 10N.

Optionally, on the basis of the above technical solution, the cutting device may include an ultrasonic cutting blade.

In the embodiment of the invention, an ultrasonic cutting knife can be adopted to cut the processing center structure to obtain the target center structure.

Fig. 4 is a flowchart of another method for manufacturing a central structure of an X-ray zone plate according to an embodiment of the present invention, which is applicable to flexibly and efficiently manufacturing a central structure having a diameter of a predetermined size and a surface roughness of a nano-scale. The method may be performed by a central structure preparation apparatus of an X-ray zone plate. As shown in fig. 4, the method specifically includes the following steps:

step 210, cleaning the original optical fiber to obtain the target optical fiber.

Step 220, removing the coating layer in the preset area on the target optical fiber by using the optical fiber coating layer stripping platform to obtain an original central structure, wherein the original central structure comprises an original fiber core and an original cladding.

One end of the original central structure is fixed to the base, and a target pulling force is applied to the base to eliminate bending caused by gravity of the original central structure, step 230.

And 240, under the preset stretching parameters, stretching the original central structure to a preset size from the other end of the original central structure by adopting ultra-stable plasma heating equipment to obtain the processing central structure in the shape of the circular truncated cone.

In an embodiment of the present invention, the preset dimensions may include a first preset diameter, a second preset diameter, and a preset length. The first predetermined diameter is less than the second predetermined diameter. The preset stretching parameters comprise the working mode of the hyperstable plasma heating equipment and the working parameters of the hyperstable plasma heating equipment, and the working parameters of the hyperstable plasma heating equipment comprise the power of the hyperstable plasma heating equipment, the stretching rate of the hyperstable plasma heating equipment and the stretching force of the hyperstable plasma heating equipment.

And 250, cutting the target position of the processing center structure by using an ultrasonic cutting knife to obtain a target center structure with a preset size.

In an embodiment of the present invention, as shown in FIG. 5, a schematic diagram of a method of manufacturing a central structure of an X-ray zone plate is given. In fig. 5, the target core structure 20 may be obtained by performing operations of removing a coating layer, heat-stretching, and ultrasonic cutting on the target optical fiber. The target fiber in fig. 5 comprises an original central structure 10 and a coating layer 11.

The working mode of the ultra-stable plasma heating equipment in the technical scheme provided by the embodiment of the invention can be a one-way tapering mode. The power of the ultra-stable plasma warming device may be 550W, and the stretching rate of the ultra-stable plasma warming device may be 80 μm/s. The diameter of the target fiber may be 200 μm. The target tension may be 10N. Based on the above, optical microscope images of various target central structures are given, as shown in fig. 6 to 11. In fig. 6, the first predetermined diameter is 83.79 μm, the second predetermined diameter is 90.41 μm, the predetermined length is 877.62 μm, and the taper is 0.2 °. In FIG. 7, the first predetermined diameter is 68.36 μm, the second predetermined diameter is 83.79 μm, the predetermined length is 855.57 μm, and the taper is 0.5 °. In FIG. 8, the first predetermined diameter is 86.00 μm, the second predetermined diameter is 110.25 μm, the predetermined length is 943.77 μm, and the taper is 0.7 °. In FIG. 9, the first predetermined diameter is 112.46 μm, the second predetermined diameter is 149.94 μm, the predetermined length is 968.03 μm, and the taper is 1.0 °. In FIG. 10, the first predetermined diameter is 138.92 μm, the second predetermined diameter is 183.02 μm, the predetermined length is 910.69 μm, and the taper is 1.4 °. In FIG. 11, the first predetermined diameter is 123.48 μm, the second predetermined diameter is 189.64 μm, the predetermined length is 1012.13 μm, and the taper is 1.8 °. It can be seen that the overall shape of each target central structure prepared by the method of the embodiment of the invention is smooth and symmetrical, is in a circular truncated cone shape, has uniform diameter, meets the requirement on taper, and has low surface roughness.

According to the technical scheme, the mode that the ultrastable plasma heating technology is adopted to obtain the central structure with the preset size is adopted, and the mould is not needed, so that the problems of selection and control of the size and the surface roughness of the central structure caused by the fact that the model of the mould is fixed and the surface of the inner wall of the mould is easy to wear in the prior art are solved, and the flexible and efficient preparation of the central structure with the preset size and the surface roughness at the nanometer level is realized.

Fig. 12 is a flowchart of a method for manufacturing an X-ray zone plate according to an embodiment of the present invention, which is applicable to a flexible, efficient, and low-cost case for manufacturing an X-ray zone plate. The method may be performed by an X-ray zone plate preparation apparatus. As shown in fig. 12, the method specifically includes the following steps:

step 310, preparing a target center structure.

In an embodiment of the present invention, the target center structure is the target center structure described in the embodiment of the present invention. That is, the target central structure described herein may be a target central structure prepared by the central structure preparation method of an X-ray zone plate according to an embodiment of the present invention.

And 320, alternately depositing a thin film ring belt structure on the surface of the target central structure by adopting an atomic layer deposition technology to obtain an original zone plate.

In an embodiment of the present invention, atomic layer deposition (ald) or Atomic Layer Epitaxy (ALE) refers to a method of forming a thin film by alternately pulsing vapor phase precursors into a reaction chamber and performing a gas-solid phase chemisorption reaction on the surface of a deposition substrate. Specifically, the target central structure can be suspended and fixed in a cavity for atomic layer deposition, after the operation to be deposited is performed, the thin film annulus structure can be alternately deposited on the surface of the target central structure to obtain an original zone plate, and the operation to be deposited can comprise vacuumizing, heating and nitrogen gas introducing. It will be appreciated that since the thin film zone structure may be deposited alternately on the surface of the target central structure, the number of layers of the thin film zone structure may be at least one. The number of layers of the film loop structure may be set according to actual conditions, and is not particularly limited herein. While the number of layers of the film hoop structure may be two or more, the material of the film hoop structure may be two. I.e. a thin film annulus structure of two materials is alternately deposited on the surface of the target central structure. The following requirements are imposed on the two materials: the refractive indexes of the two materials are greatly different, and the adjacent annular zones can generate pi bit difference after X rays are absorbed. Based on the above, the material of the thin film endless belt structure may include an oxide, a nitride, and a simple metal. The oxide may include aluminum oxide, hafnium oxide, tantalum oxide, silicon oxide, and the like. The nitride may include aluminum nitride, silicon nitride, gallium nitride, and the like. The elemental metal may include iridium, platinum, copper, palladium, and the like. Optionally, the oxide in the embodiment of the present invention may include aluminum oxide and hafnium oxide. Namely, a thin film ring belt structure made of aluminum oxide and a thin film ring belt structure made of chromium oxide are alternately deposited on the surface of the target central structure.

And 330, depositing a protective layer on the surface of the original zone plate, and cutting the original zone plate by adopting a focused ion beam micro-nano processing technology to obtain the target zone plate.

In the embodiment of the invention, after the original zone plate is obtained, a protective layer can be deposited on the surface of the original zone plate by adopting methods such as electroplating, electron beam evaporation or magnetron sputtering, and the like, and the protective layer can be cut and polished into slices with certain thickness by adopting a focused ion beam micro-nano processing technology to obtain the target zone plate.

According to the technical scheme of the embodiment, the target central structure is prepared by adopting an ultra-stable plasma heating technology, the thin film zone structure is alternately deposited on the surface of the target central structure by adopting an atomic layer deposition technology to obtain the original zone plate, the protective layer is deposited on the surface of the original zone plate, the original zone plate is cut by adopting a focused ion beam micro-nano processing technology to obtain the target zone plate, and the X-ray zone plate with a large height-width ratio is quickly and efficiently prepared.

Optionally, on the basis of the above technical scheme, an atomic layer deposition technique is adopted to alternately deposit a thin film zone structure on the surface of the target central structure to obtain an original zone plate, which specifically includes: and suspending and fixing the target central structure in a cavity for atomic layer deposition, and after performing deposition-waiting operation, alternately depositing a thin film ring belt structure on the surface of the target central structure to obtain an original zone plate, wherein the deposition-waiting operation comprises vacuumizing, heating and introducing nitrogen.

Optionally, on the basis of the above technical scheme, depositing a protective layer on the surface of the original zone plate, and cutting the original zone plate by using a focused ion beam micro-nano processing technology to obtain a target zone plate, which may specifically include: and depositing a protective layer on the surface of the original zone plate to obtain the processed zone plate. The process zone plate is fixed into the focused ion beam system and the focus is adjusted. And under preset processing parameters, processing the processing zone plate to a preset thickness by adopting a large beam cutting and small beam surface polishing method to obtain a target zone plate, wherein the preset processing parameters comprise acceleration voltage and ion beam current.

In the embodiment of the invention, a protective layer can be deposited on the surface of the original zone plate by adopting methods such as electroplating, electron beam evaporation, magnetron sputtering and the like, so as to obtain the processing zone plate. The processing zone plate may be fixed into the focusing ion system and focus adjusted. The processing zone plate can be processed to a preset thickness by adopting a large beam cutting and small beam surface polishing method according to preset processing parameters to obtain a target zone plate. The processing parameters may include an acceleration voltage and an ion beam current.

Optionally, on the basis of the above technical solution, the material of the thin film girdle structure may include an oxide, a nitride, and a simple metal.

Optionally, on the basis of the above technical solution, the oxide may include any two of aluminum oxide, hafnium oxide, tantalum oxide, and silicon oxide. The nitride may include any two of aluminum nitride, silicon nitride, and gallium nitride. The elemental metal may include any two of iridium, platinum, copper, and palladium.

Optionally, on the basis of the above technical solution, the oxide may include aluminum oxide and hafnium oxide.

Fig. 13 is a flowchart of another method for manufacturing an X-ray zone plate according to an embodiment of the present invention, which is applicable to the flexible, efficient, and low-cost case of manufacturing an X-ray zone plate. The method may be performed by an X-ray zone plate preparation apparatus. As shown in fig. 13, the method specifically includes the following steps:

step 410, preparing a target center structure.

In an embodiment of the present invention, the target center structure is the target center structure described in the embodiment of the present invention.

And 420, suspending and fixing the target central structure in a cavity for atomic layer deposition, and after performing to-be-deposited operation, alternately depositing a thin film annulus structure on the surface of the target central structure to obtain an original zone plate, wherein the to-be-deposited operation comprises vacuumizing, heating and introducing nitrogen.

And 430, depositing a protective layer on the surface of the original zone plate to obtain a processed zone plate.

Step 440, fix the process zone plate into the focused ion beam system and adjust the focus.

And 450, processing the processing zone plate to a preset thickness by adopting a large beam cutting and small beam surface polishing method under preset processing parameters to obtain a target zone plate, wherein the processing parameters comprise acceleration voltage and ion beam current.

In embodiments of the present invention, the material of the thin film endless belt structure may include aluminum oxide and hafnium oxide. Based on the above, as shown in fig. 14, a schematic diagram of a method for manufacturing an X-ray zone plate is given. In fig. 14, the material of the thin film zone structure 30 of the process zone plate 3 may be alumina and the material of the thin film zone structure 31 may be chromium oxide. Through the processing of the processing zone plate 3, a target zone plate 4 is obtained. The target-centric structure 20 of fig. 14 is the target-centric structure 20 of fig. 5.

According to the technical scheme of the embodiment, the target central structure is prepared by adopting an ultra-stable plasma heating technology, the thin film zone structure is alternately deposited on the surface of the target central structure by adopting an atomic layer deposition technology to obtain the original zone plate, the protective layer is deposited on the surface of the original zone plate, the original zone plate is cut by adopting a focused ion beam micro-nano processing technology to obtain the target zone plate, and the X-ray zone plate with a large height-width ratio is quickly and efficiently prepared.

The embodiment of the invention provides an X-ray zone plate. The X-ray zone plate comprises the target central structure provided by the embodiment of the invention, and the target central structure is prepared by the central structure preparation method of the X-ray zone plate provided by the embodiment of the invention.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.