阅读说明：本技术 一种高纯镓的生产装置及方法 (Production device and method of high-purity gallium ) 是由 卢鹏荐 曾小龙 张�林 官建国 章嵩 于 2021-08-19 设计创作，主要内容包括：本发明提出了一种高纯镓的生产装置,包括壳体以及壳体顶端的进料口、壳体底端的出料口、缠绕于壳体外壁的热交换管,还包括活动浮板和通气管,所述活动浮板吻合壳体内壁置于壳体内部,所述活动浮板上设有贯穿表面和顶面的通孔；所述通气管由壳体外部延伸至壳体内部的底端面上,且所述通气管处于壳体外侧的外部段连接气源,处于壳体内侧的内部段上设有气孔；所述进料口上设有进料开关阀,所述壳体顶端还设有排气口。本发明可以实现连续化、分级提纯生产高纯镓；通过活动浮板以及通气管的配合,惰性气体在结晶时由下而上,避免冷凝结晶过程中的附聚现象,分散镓液中的杂质保证杂质相流动性,并向未结晶的液相进行富集,提高结晶的速度和纯度。(The invention provides a production device of high-purity gallium, which comprises a shell, a feed inlet at the top end of the shell, a discharge outlet at the bottom end of the shell, a heat exchange tube wound on the outer wall of the shell, a movable floating plate and a vent pipe, wherein the movable floating plate is arranged in the shell in a manner of being matched with the inner wall of the shell, and the movable floating plate is provided with a through hole penetrating through the surface and the top surface; the breather pipe extends from the outside of the shell to the bottom end surface inside the shell, the outer section of the breather pipe, which is positioned at the outer side of the shell, is connected with an air source, and the inner section, which is positioned at the inner side of the shell, is provided with an air hole; the feeding opening is provided with a feeding switch valve, and the top end of the shell is also provided with an exhaust opening. The invention can realize continuous and graded purification to produce high-purity gallium; through the cooperation of activity kickboard and breather pipe, inert gas is from bottom to top when the crystallization, avoids the agglomeration phenomenon in the condensation crystallization process, and impurity in the dispersed gallium liquid guarantees impurity phase mobility to carry out the enrichment to the liquid phase of not crystallizing, improve the speed and the purity of crystallization.)

1. A production device of high-purity gallium comprises a shell (101), a feed inlet (103) at the top end of the shell (101), a discharge outlet (106) at the bottom end of the shell (101), and a heat exchange tube (102) wound on the outer wall of the shell (101), and is characterized by further comprising a movable floating plate (107) and a vent tube (105), wherein the movable floating plate (107) is matched with the inner wall of the shell (101) and is arranged inside the shell (101), and the movable floating plate (107) is provided with a through hole (1071) penetrating through the surface and the top surface; the vent pipe (105) extends from the outside of the shell to the bottom end face of the inside of the shell (101), an outer section (1051) of the vent pipe (105) at the outside of the shell (101) is connected with an air source, and an inner section (1052) at the inside of the shell (101) is provided with an air hole (1053); and a feeding switch valve (1031) is arranged on the feeding hole (103), and an exhaust port (104) is further arranged at the top end of the shell (101).

2. The apparatus for producing high purity gallium according to claim 1, wherein the heat exchange tubes (102) are fed with water from the upper end and discharged with water from the lower end, and the spacing density of the heat exchange tubes (102) on the shell (101) from top to bottom increases.

3. The apparatus for producing high purity gallium according to claim 1, wherein the bottom surface of the casing (101) is provided with a slot, and the inner section (1052) of the vent tube (105) is fitted into the slot.

4. The apparatus for producing high purity gallium according to claim 1, wherein the outlet (106) is provided with a three-way valve, a first port of the three-way valve is connected to the outlet of the upper layer production apparatus (10) and is provided with a first on-off valve (1061), and a second port and a third port are provided with a second on-off valve (1062) and a third on-off valve (1063), respectively.

5. The apparatus for producing high purity gallium according to claim 4, wherein the apparatus comprises at least two apparatus arranged in series from top to bottom, the first port of the three-way valve is connected to the discharge port of the upper apparatus (10), the second port is connected to the storage tank, and the third port is connected to the feed port of the lower apparatus (20).

6. The apparatus for producing high purity gallium according to claim 5, wherein the discharge end of the heat exchange tube of the upper layer production apparatus (10) is connected to the water inlet end of the heat exchange tube of the lower layer production apparatus (20); the exhaust port of the upper production device (10) is connected to the air inlet end of the vent pipe of the lower production device (20).

7. The production method of high purity gallium by the production apparatus according to any one of claims 1 to 6, comprising the steps of:

s1, pouring molten raw material gallium liquid into the shell (101) from the feed inlet (103), closing a first switch valve (1061) on the discharge port (106) and a feed switch valve (1031) on the feed inlet (103), slowly introducing inert gas into the vent pipe (105), and continuously introducing a cooling medium into the heat exchange pipe (102);

s2, partially crystallizing the gallium liquid, opening a first switch valve (1061) and a second switch valve (1062), and enabling all the uncrystallized gallium liquid to flow into the lower-layer production device (20);

s3, closing the first switch valve (1061) and the second switch valve (1062), and continuously introducing a heat medium into the heat exchange tube (102) until all gallium liquid is melted;

and S4, repeating the operation of the steps S1-S3 for N times, wherein N is an integer greater than or equal to 1, and opening the first switch valve (1061) and the third switch valve (1063) to obtain the high-purity gallium liquid.

8. The method for producing high-purity gallium according to claim 7, wherein the temperature of the raw material gallium liquid is 30 to 50 ℃, the temperature of the cold medium is 15 to 25 ℃, and the temperature of the hot medium is 30 to 60 ℃.

9. The method for producing high purity gallium according to claim 7, wherein the purity of said raw gallium liquid is 4N.

10. The method for producing high-purity gallium according to claim 9, wherein the purity of the high-purity gallium liquid is 6 to 8N.

Technical Field

The invention relates to the technical field of preparation of high-purity gallium, in particular to a device and a method for producing high-purity gallium.

Background

Since the concentration of gallium in the earth's crust is very low, 0.0015% by weight of gallium in the earth's crust, it is distributed widely, but not in the pure metallic state, but in the form of thiogallate (CuGaS)₂) Forms exist, but are rare. Gallium compounds, in particular gallium arsenide, have attracted more and more attention in the electronics industry, and in most fields of application, such as the semiconductor field, it is necessary to use gallium with a high purity of more than 6N (99.9999%), and in some fields, even of the order of 8N, so that the purification of metallic gallium is of great importance. In the prior art, extraction methods, electrolysis methods, reduced pressure distillation methods, crystallization methods and the like are generally used for gallium purification, wherein the crystallization methods are highly valued by researchers due to environmental protection and short period. However, some crystallization purification techniques in the prior art are difficult to obtain high purity, while some require repeated purification operations to obtain high purity, and almost no techniques suitable for continuous and continuous purification appear, and the prior art consumes energy and time, and is not beneficial to large-scale production.

Disclosure of Invention

In order to solve the problems, the invention provides a device and a method for producing high-purity gallium, which can realize continuous and graded purification to produce the high-purity gallium, through the matching of a movable floating plate and a vent pipe, inert gas is from bottom to top during crystallization, the agglomeration phenomenon in the condensation crystallization process is avoided, impurities in a dispersed gallium liquid ensure the fluidity of impurity phases, and the impurities are enriched to an uncrystallized liquid phase, so that the crystallization speed and the purity are improved.

The technical scheme of the invention is realized as follows:

a production device of high-purity gallium comprises a shell 101, a feed inlet 103 at the top end of the shell 101, a discharge outlet 106 at the bottom end of the shell 101, a heat exchange tube 102 wound on the outer wall of the shell 101, a movable floating plate 107 and a vent pipe 105, wherein the movable floating plate 107 is arranged inside the shell 101 in a manner of being matched with the inner wall of the shell 101, and the movable floating plate 107 is provided with a through hole 1071 penetrating through the surface and the top surface; the vent pipe 105 extends from the outside of the shell to the bottom end surface of the inside of the shell 101, an outer section 1051 of the vent pipe 105, which is positioned at the outside of the shell 101, is connected with an air source, and an inner section 1052, which is positioned at the inside of the shell 101, is provided with an air hole 1053; the feed inlet 103 is provided with a feed switch valve 1031, and the top end of the shell 101 is also provided with an exhaust port 104.

Preferably, the heat exchange tubes 102 are filled with water from the upper end and drained from the lower end, and the interval density of the heat exchange tubes 102 on the shell 101 from top to bottom increases from small to large.

Preferably, the bottom surface of the housing 101 is provided with a slot, and the inner section 1052 of the vent tube 105 fits into the slot.

Preferably, the discharge port 106 is provided with a three-way valve, a first valve port of the three-way valve is connected to the discharge port of the upper production device 10, a first switch valve 1061 is disposed on the first valve port, and a second switch valve 1062 and a third switch valve 1063 are disposed on the second valve port and the third valve port, respectively.

Preferably, the production devices are at least two continuous devices arranged in sequence from top to bottom, the first valve port of the three-way valve is connected with the discharge port of the upper production device 10, the second valve port is connected with the storage tank, and the third valve port is connected with the feed port of the lower production device 20.

Preferably, the water outlet end of the heat exchange pipe of the upper production device 10 is connected to the water inlet end of the heat exchange pipe of the lower production device 20, and the air outlet of the upper production device 10 is connected to the air inlet end of the vent pipe of the lower production device 20.

A production method of high-purity gallium comprises the following steps:

s1, pouring molten raw material gallium liquid into the shell 101 from the feed inlet 103, closing the first switch valve 1061 on the discharge port 106 and the feed switch valve 1031 on the feed inlet 103, slowly introducing inert gas into the vent pipe 105, and continuously introducing a cooling medium into the heat exchange pipe 102;

s2, partially crystallizing the gallium liquid, opening the first switch valve 1061 and the second switch valve 1062, and allowing the uncrystallized gallium liquid to flow into the lower-layer production device 20;

s3, closing the first switch valve 1061 and the second switch valve 1062, and continuously introducing a heat medium into the heat exchange tube 102 until all gallium liquid is melted;

s4, repeating the operation of the steps S1-S3 for N times, wherein N is an integer greater than or equal to 1, and opening the first switch valve 1061 and the third switch valve 1063 to obtain high-purity gallium liquid;

preferably, the temperature of the raw material gallium liquid is 30-50 ℃, the temperature of the cold medium is 15-25 ℃, and the temperature of the hot medium is 30-60 ℃.

Preferably, the purity of the raw material gallium liquid is 4N.

Preferably, the purity of the high-purity gallium liquid is 6-8N.

The invention has the following beneficial effects:

(1) according to the invention, by designing the movable floating plate and the vent pipe, the through hole is formed in the movable floating plate, the vent pipe is provided with the air hole, and in the cooling and crystallization process of the gallium liquid, inert gas enters the gallium liquid from bottom to top and is discharged from the through hole of the movable floating plate. The applicant found that: compared with the scheme in the prior art, in the case of stirring or complete static crystallization, the density of gallium in the crystal phase is less than that of the gallium liquid, so that the uniformity of the crystallization can be improved during stirring in the prior art, but mother liquor is easily mixed and entrained between crystals on the premise of stirring to influence the purity; and crystallization under the condition of complete rest easily causes local over-nucleation, the crystallization environment of each position slightly changes, and the formed crystals are easily different in size, so that the purity is influenced.

In the invention, the inert gas is slowly introduced, because the density of the gallium is less than that of the liquid gallium in the crystallization process, the gallium is finally enriched below the movable floating plate, and the inert gas moves from bottom to top, so that the slight flowing property is ensured in the gallium liquid, impurities can be enriched in the lower-layer gallium liquid at any time, and meanwhile, the force of agglomeration of the crystalline gallium to the top end can be given to the crystalline gallium to facilitate the enrichment of the crystalline gallium.

Meanwhile, the heat exchange tubes are positioned on the outer wall of the shell, so that proper fluidity is beneficial to the flow of the gallium liquid in the middle and the side of the shell, the uniformity of heat exchange is improved, the uniform degree of crystallization on the same layer of the whole body is ensured, the uniformity of the crystal granularity is improved, and the purity of the product is further improved.

(2) The heat exchange tube is of an arrangement structure with a dense upper part and a sparse lower part, is suitable for crystallization of gallium liquid, preferentially crystallizes and gathers crystals at the upper part, has a slightly lower upper layer temperature than the lower layer temperature when cold medium is introduced, and is beneficial to accelerating the crystallization speed by the principle that crystals with higher enrichment purity are enriched to form seed crystals.

(3) The inert gas is continuously introduced, because the gas is from bottom to top, after the crystal gallium is agglomerated at the upper part, the temperature of the gas when the gas is introduced from the bottom of the shell is slightly higher than that of the agglomeration area of the crystal, at the moment, according to the crystallization characteristic of the gallium, the temperature of the crystallization part can be slightly increased when the inert gas rises and passes through the rising of the crystallization layer in the process of the rising of the gallium, the rapid growth of the crystal can be promoted, and in the case, the coarse regular crystal gallium is easier to form, and the liquid is less easy to be entrained compared with the fine, needle-shaped and feather-shaped crystals, so that the purity of the obtained product is higher.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic view of the present invention in a multiple up and down installation.

Fig. 3 is a schematic cross-sectional structure of the present invention.

Fig. 4 is a schematic structural view of the movable floating plate of the present invention.

Fig. 5 is a schematic structural view of the breather pipe of the present invention.

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

1-5, the apparatus comprises a housing 101, a feed inlet 103 at the top end of the housing 101, a discharge outlet 106 at the bottom end of the housing 101, a heat exchange tube 102 wound around the outer wall of the housing 101, a movable floating plate 107 and a vent tube 105, wherein the movable floating plate 107 is matched with the inner wall of the housing 101 and is arranged inside the housing 101, and the movable floating plate 107 is provided with a through hole 1071 penetrating the surface and the top surface; the vent pipe 105 extends from the outside of the shell to the bottom end surface of the inside of the shell 101, an outer section 1051 of the vent pipe 105, which is positioned at the outside of the shell 101, is connected with an air source, and an inner section 1052, which is positioned at the inside of the shell 101, is provided with an air hole 1053; the feed inlet 103 is provided with a feed switch valve 1031, and the top end of the shell 101 is also provided with an exhaust port 104.

In this embodiment, the heat exchange tubes 102 are arranged in the shell 101 from the upper end to the lower end, and the interval density of the heat exchange tubes 102 from the top to the bottom increases.

In this embodiment, the bottom surface of the casing 101 is provided with a slot, and the inner section 1052 of the vent tube 105 fits into the slot.

In this embodiment, the discharge port 106 is provided with a three-way valve, a first valve port of the three-way valve is connected to the discharge port of the upper layer production apparatus 10, a first switch valve 1061 is disposed on the first valve port, and a second switch valve 1062 and a third switch valve 1063 are disposed on the second valve port and the third valve port, respectively. The production devices are at least two continuous devices which are arranged from top to bottom in sequence, a first valve port of the three-way valve is connected with a discharge port of the upper-layer production device 10, a second valve port is connected with a material storage tank, and a third valve port is connected with a feed port of the lower-layer production device 20; the water discharging end of the heat exchange pipe of the upper production device 10 is connected to the water inlet end of the heat exchange pipe of the lower production device 20, and the air outlet of the upper production device 10 is connected to the air inlet end of the vent pipe of the lower production device 20.

The production method of high-purity gallium comprises the following steps:

s1, pouring the raw material gallium liquid with the melting purity of 4N into the shell 101 from the material opening 103 at the temperature of 30-50 ℃, closing the first switch valve 1061 on the material opening 106 and the feeding switch valve 1031 on the material opening 103, slowly introducing inert gas into the vent pipe 105, and continuously introducing the cooling medium with the temperature of 30-50 ℃ into the heat exchange pipe 102;

s2, partially crystallizing the gallium liquid, opening the first switch valve 1061 and the second switch valve 1062, and allowing the uncrystallized gallium liquid to flow into the lower-layer production device 20;

s3, closing the first switch valve 1061 and the second switch valve 1062, and continuously introducing a medium with the temperature of 30-60 ℃ into the heat exchange tube 102 until all gallium liquid is melted;

and S4, repeating the operation of the steps S1-S3 for N times, wherein N is an integer greater than or equal to 1, and opening the first switch valve 1061 and the third switch valve 1063 to obtain the high-purity gallium liquid with the purity of 6-8N.

When a single production device is used, the above steps are repeated several times, that is, the waste liquid with high impurity content flows into the lower layer production device 20, that is, the lower layer production device 20 can be directly used as a waste liquid storage, and finally the gallium liquid in the step S4 has high purity.

When a plurality of upper layer selecting devices and layer selecting devices are connected, the time for crystallization and condensation each time can be shortened, enough uncrystallized gallium liquid is reserved (the uncrystallized gallium liquid is greatly increased compared with the uncrystallized gallium liquid in a single production device), and the phenomenon that the quality of a product is influenced by the gradual increase of impurities carried in the uncrystallized gallium liquid in the later period when the impurities are more enriched is avoided. The probability can be reduced by adopting a plurality of devices, the crystallization can be carried out when the impurity content of the gallium liquid is low in the early stage, the future and crystallized gallium liquid can flow into the lower-layer production device to be crystallized continuously, new raw material gallium can be added after the upper-layer crystallized gallium is melted and stored, and the high-purity gallium which is slightly lower than that in the upper-layer production device can be obtained in the lower-layer production device in the later stage of circulation for many times. Therefore, the purity of the gallium obtained from the upper layer is 8N, the gallium with different 4-8N can be obtained from the lower layer, high-purity gallium can be obtained firstly, and products with different purities can be obtained through fractional crystallization. On the premise that the temperature and time of the whole device are controllable, products in different batches can be formed to be consistent in purity to the maximum extent, and compared with the prior art, the method can realize continuous operation and improve the purity of gallium products prepared from raw materials under the same conditions.

As shown in fig. 3-5, in the process of preparing gallium product of the present invention, the inert gas is introduced into the single production apparatus, which is generally a gas that does not react with gallium, such as nitrogen, and the inert gas is introduced from the gas hole 1053 on the gas vent pipe 105. The vent pipes 105 are, but not limited to, uniformly distributed at the bottom of the casing 101 in a disc shape, a circular shape, a tortuous shape, and the like, so as to ensure that the air flow can uniformly rise from bottom to top on the cross section, and improve the uniformity of the overall circulation.

In the crystallization process of gallium, the density of solid crystalline gallium 2 is less than that of liquid gallium 1, and the solid crystalline gallium is finally enriched below the movable floating plate 107, and the inert gas moves from bottom to top, so that slight flow direction is ensured in the gallium liquid, impurities can be enriched in the lower-layer gallium liquid at any time, and meanwhile, the crystalline gallium can be enriched by the aid of the agglomeration force towards the top end. Meanwhile, the heat exchange tubes are positioned on the outer wall of the shell, so that proper fluidity is beneficial to the flow between the gallium liquid in the middle part and the gallium liquid at the side part of the shell, the uniformity of heat exchange is improved, the uniform degree of crystallization on the same layer of the whole body is ensured, the uniformity of the crystal granularity is improved, and the purity of the product is further improved.

Compared with the scheme in the prior art, in the case of stirring or complete static crystallization, the density of gallium in the crystal phase is less than that of the gallium liquid, so that the uniformity of the crystallization can be improved during stirring in the prior art, but mother liquor is easily mixed and entrained between crystals on the premise of stirring to influence the purity; and crystallization under the condition of complete rest easily causes local over-nucleation, the crystallization environment of each position slightly changes, and the formed crystals are easily different in size, so that the purity is influenced.

Heat exchange pipe 102 is the arrangement structure of upper-dense lower-sparse, is adapted to the crystallization of this application gallium liquid, and upper portion can be preferentially crystallized and gather the crystal, and when letting in cold medium, the lower floor temperature of upper temperature is slightly low, and the higher crystal enrichment of activity kickboard 107 enrichment purity forms the principle of seed crystal, does benefit to the speed of accelerating the crystallization, and under the circumstances of cooperation inert gas simultaneously, impurity can not be gradually enrichment in the gallium liquid of not crystallizing, guarantees the purity of crystallization under the prerequisite that improves crystallization efficiency.

The inert gas is continuously introduced, the speed of the introduced amount of the inert gas is adjusted according to the actual situation, and because the gas is from bottom to top, after the crystal gallium agglomerated at the upper part, the temperature of the normal temperature gas is slightly higher than that of the crystal agglomeration area when the normal temperature gas is introduced from the bottom of the shell, at the moment, according to the characteristics of the gallium crystallization: (during the inert gas rising, when it passes through the rising in the crystallization layer), the temperature at the crystallization site is slightly increased to promote the rapid growth of the crystals, and in this case, coarse and regular gallium crystals are more easily formed, and the liquid is less likely to be entrained than fine, needle-like, or feather-like crystals, so that the purity of the obtained product is higher. Therefore, the impurity phase is transferred based on the inert gas flow, and simultaneously, the mechanism of crystallization forming can be changed, and the purity of the finally formed product is higher.

Meanwhile, the movable floating plate 107 has the functions of ventilating and enriching the crystalline gallium, and can apply a compaction acting force to the crystalline gallium 1 after the non-crystalline gallium liquid is discharged after the gallium liquid is crystallized to a proper degree, so that the gallium liquid is fully extruded and firmed, and the residual gallium liquid rich in impurities is not contained in the crystallization layer as much as possible. Meanwhile, after the high-purity gallium is melted, discharged and stored, once the raw material is newly added, as the raw material gallium liquid flows down from the through hole 1071 of the movable floating plate 107 again, the movable floating plate 107 slowly floats, the floating plate 107 is ensured to be always positioned at the top end of the gallium liquid, and then after the bottom end of the movable floating plate 107 is enriched with the crystalline gallium, the effect of seed crystals is formed, and the crystallization speed is improved.

Therefore, based on the structural design, the purity of the gallium crystal can be improved from various factors, and the gallium crystal can be coordinated with each other to improve the crystallization efficiency, so that the purity of the obtained product is higher and the time is shorter under the same conditions. Moreover, based on the up-down installation of a plurality of devices, the gallium with different purities can be respectively crystallized and purified, and then the extraction of 4-8N gallium with even higher purity can be realized.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.