阅读说明：本技术 线形状测量装置、线三维图像产生方法及线形状测量方法 (Line shape measuring device, line three-dimensional image generating method, and line shape measuring method ) 是由 金城隆也 中野晶太 関川阳 宗像広志 于 2020-04-07 设计创作，主要内容包括：半导体装置(10)的线形状测量装置(100)包括：基板(11)、半导体元件(20)以及将半导体元件(20)的电极(25)与基板(11)的电极(12)连接的线(30),且包括：多个照相机(41、42),拍摄半导体装置(10)的二维图像；以及控制部(50),基于各照相机(41、42)所获取的半导体装置(10)的各二维图像进行线(30)的形状检查,控制部(50)通过使用线(30)对基板(11)或半导体元件(20)的连接位置信息及线(30)的粗度信息的图案匹配,由各照相机(41、42)所获取的半导体装置(10)的各二维图像产生线(30)的三维图像,并基于所产生的线(30)的三维图像进行线(30)的形状测量。(A line shape measuring device (100) of a semiconductor device (10) comprises: a semiconductor device includes a substrate (11), a semiconductor element (20), and a wire (30) connecting an electrode (25) of the semiconductor element (20) and an electrode (12) of the substrate (11), and includes: a plurality of cameras (41, 42) for capturing two-dimensional images of the semiconductor device (10); and a control unit (50) that performs shape inspection of the lines (30) based on the two-dimensional images of the semiconductor device (10) acquired by the cameras (41, 42), wherein the control unit (50) generates a three-dimensional image of the lines (30) from the two-dimensional images of the semiconductor device (10) acquired by the cameras (41, 42) by pattern matching using connection position information of the lines (30) with respect to the substrate (11) or the semiconductor element (20) and thickness information of the lines (30), and performs shape measurement of the lines (30) based on the generated three-dimensional image of the lines (30).)

1. A linear shape measuring apparatus which is a linear shape measuring apparatus of a semiconductor apparatus, the semiconductor apparatus comprising:

a substrate;

a semiconductor element mounted on the substrate; and

a wire connecting an electrode of the semiconductor element to an electrode of the substrate or connecting one electrode of the semiconductor element to another electrode of the semiconductor element, the wire shape measuring apparatus comprising:

a plurality of cameras that take two-dimensional images of the semiconductor device; and

a control section that performs shape measurement of the lines based on the two-dimensional images of the semiconductor devices acquired by the cameras,

the control section generates a three-dimensional image of the line from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using connection position information of the line to the substrate or the semiconductor element and thickness information of the line,

performing a shape measurement of the line based on the generated three-dimensional image of the line.

2. The line shape measuring device of claim 1, characterized in that

The control unit extracts two-dimensional coordinates of each point in each two-dimensional image corresponding to one portion of the line from each two-dimensional image of the semiconductor device acquired by each camera using information on a connection position of the line to the substrate or the semiconductor element and information on thickness of the line,

calculating a three-dimensional coordinate of a portion of the line using the extracted two-dimensional coordinates,

a three-dimensional image of the line is generated based on the calculated three-dimensional coordinates.

3. The line shape measuring device of claim 2, characterized in that

The control unit extracts two-dimensional coordinates of each point in each two-dimensional image corresponding to each of a plurality of portions of the line by repeating, from a start to an end of the line, an operation of extracting each two-dimensional coordinate of each point in each two-dimensional image corresponding to one portion of the line from each two-dimensional image of the semiconductor device acquired by each camera using connection position information of the line to the substrate or the semiconductor element and thickness information of the line,

calculating three-dimensional coordinates of the plurality of portions of the line using the extracted two-dimensional coordinates in the two-dimensional images corresponding to the plurality of portions of the line,

generating a three-dimensional image of the line from the open end to the end based on the calculated three-dimensional coordinates of the plurality of portions of the line.

4. The line shape measuring device according to any one of claims 1 to 3, characterized in that

The cameras are respectively disposed on both sides of the line such that an optical axis intersects with an extending direction of the line.

5. The line shape measuring device according to any one of claims 1 to 3, characterized in that

The control section performs a shape check of the line based on the generated three-dimensional image of the line.

6. The line shape measuring device according to claim 5, characterized in that

The control unit compares the generated three-dimensional image of the line with a reference shape of the line, thereby performing a shape check of the line.

7. The line shape measuring device of claim 6, characterized in that

The control section extracts a shape parameter of the line from the generated three-dimensional image of the line,

performing a shape check of the line by comparing the extracted shape parameter with a reference value of the shape parameter.

8. A line three-dimensional image generation method, which is a line three-dimensional image generation method of a semiconductor device, the semiconductor device comprising:

a substrate;

a semiconductor element mounted on the substrate; and

a wire connecting an electrode of the semiconductor element to an electrode of the substrate or connecting one electrode of the semiconductor element to another electrode of the semiconductor element, the wire three-dimensional image generating method comprising:

an imaging step of imaging two-dimensional images of the semiconductor device with a plurality of cameras, respectively; and

a three-dimensional image generating step of generating a three-dimensional image of the line from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using connection position information of the line to the substrate or the semiconductor element and thickness information of the line.

9. The line three-dimensional image generation method according to claim 8, characterized in that

The three-dimensional image generating step includes:

a two-dimensional coordinate extraction step of extracting, from each two-dimensional image of the semiconductor device acquired by each camera, each two-dimensional coordinate of each point in each two-dimensional image corresponding to one portion of the line, using information on a connection position of the line to the substrate or the semiconductor element and information on a thickness of the line;

a three-dimensional coordinate calculating step of calculating a three-dimensional coordinate of a part of the line using the extracted two-dimensional coordinates; and

an image generation step of generating a three-dimensional image of the line based on the calculated three-dimensional coordinates.

10. A line three-dimensional image generation method according to claim 9, characterized in that

The two-dimensional coordinate extracting step extracts two-dimensional coordinates of each point in each two-dimensional image corresponding to each of a plurality of portions of the line by repeating, from a start to an end of the line, an operation of extracting each two-dimensional coordinate of each point in each two-dimensional image corresponding to one portion of the line from each two-dimensional image of the semiconductor device acquired by each camera using connection position information of the line to the substrate or the semiconductor element and thickness information of the line,

the three-dimensional coordinate calculating step calculates three-dimensional coordinates of the plurality of portions of the line using the extracted two-dimensional coordinates in the two-dimensional images corresponding to the plurality of portions of the line,

the image generation step generates a three-dimensional image of the line from the open end to the end based on the calculated three-dimensional coordinates of the plurality of portions of the line.

11. A line shape measuring method, which is a line shape measuring method of a semiconductor device, the semiconductor device comprising:

a substrate;

a semiconductor element mounted on the substrate; and

a wire connecting an electrode of the semiconductor element to an electrode of the substrate or connecting one electrode of the semiconductor element to another electrode of the semiconductor element, the wire shape measuring method comprising:

an imaging step of imaging two-dimensional images of the semiconductor device with a plurality of cameras, respectively;

a three-dimensional image generating step of generating a three-dimensional image of the line from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using connection position information of the line to the substrate or the semiconductor element and thickness information of the line; and

a measuring step of performing shape measurement of the line based on the generated three-dimensional image of the line.

12. The line shape measuring method according to claim 11, characterized by comprising:

an inspection step of performing shape inspection of the line based on the generated three-dimensional image of the line.

13. The line shape measuring method according to claim 12, characterized in that

The checking step performs shape checking of the line by comparing the generated three-dimensional image of the line with a reference shape of the line.

14. The line shape measuring method according to claim 13, characterized in that

The checking step performs the shape check of the line by extracting a shape parameter of the line from the generated three-dimensional image of the line and comparing the extracted shape parameter with a reference value of the shape parameter.

Technical Field

The present invention relates to a line shape measuring apparatus for measuring the shape of a line connecting an electrode of a semiconductor device mounted on a substrate and an electrode of the substrate, a method of generating a three-dimensional image of the line, and a line shape measuring method for measuring the shape of the line.

Background

The measurement of the loop shape of a bonding wire (hereinafter, referred to as a wire) connecting a pad (pad) of a semiconductor chip and a lead (lead) of a substrate is being performed. As a method of measuring the line arc shape of the line, there is proposed a method of: the XY coordinates of the line of the focal height of the optical system are detected, thereby measuring the three-dimensional shape of the entire line (see, for example, patent document 1).

The method includes illuminating a line with a ring illuminator, capturing line images while changing a focal height with an optical system that reduces a focal depth, detecting a dark portion appearing at the center of each line image, detecting XY coordinates of each line at each focal height, and detecting a three-dimensional shape of the entire line based on the data.

Documents of the prior art

Patent document

Patent document 1: japanese patent No. 3235009 Specification

Disclosure of Invention

Problems to be solved by the invention

In recent years, it has been demanded to measure the shape of all wires connecting the electrodes of the semiconductor chip and the electrodes of the substrate. However, the line shape measuring method described in patent document 1 has a problem that it takes a long time to inspect because it is necessary to change the focal height of the optical system and take a plurality of images.

In addition, high accuracy of the line shape measurement is also required. When a line is illuminated by a ring illuminator as in the conventional technique described in patent document 1, a portion of the line extending in a substantially horizontal direction may become a dark portion near the center line of the line at a focusing point and an image in which the edges at both ends in the width direction of the line are bright, but conversely, an image in which the edges at both ends in the width direction of the line are dark is bright near the center line of the line at a portion where the line is inclined. Therefore, the conventional technique described in patent document 1 has the following problems: the accuracy of detecting the three-dimensional shape of the entire line is lowered for the line having the inclined portion.

Accordingly, an object of the present invention is to provide a line shape measuring apparatus capable of measuring a shape of a line with high accuracy and in a short time.

Means for solving the problems

A line shape measuring device of the present invention is a line shape measuring device of a semiconductor device, the semiconductor device including: a substrate; a semiconductor element mounted on the substrate; and a wire connecting an electrode of the semiconductor element with an electrode of the substrate, or connecting one electrode of the semiconductor element with another electrode of the semiconductor element, the wire shape measuring apparatus comprising: a plurality of cameras that take two-dimensional images of the semiconductor devices; and a control section that performs shape measurement of the lines based on the two-dimensional images of the semiconductor device acquired by the cameras, the control section generating a three-dimensional image of the lines from the two-dimensional images of the semiconductor device acquired by the cameras by using pattern matching of connection position information of the line to the substrate or the semiconductor element and thickness information of the lines, and performing shape measurement of the lines based on the generated three-dimensional image of the lines.

In this way, by using pattern matching of the connection position information of the line to the substrate or the semiconductor element and the thickness information of the line, a three-dimensional image of the line is generated from each two-dimensional image of the semiconductor device acquired by each camera, and therefore, a three-dimensional image can be generated with good accuracy in a short time. Thus, a line shape measuring apparatus capable of measuring the shape of a line with high accuracy and in a short time can be provided.

In the line shape measuring device of the present invention, the control unit may extract each two-dimensional coordinate of each point in each two-dimensional image corresponding to one portion of the line from each two-dimensional image of the semiconductor device acquired by each camera using the connection position information of the line to the substrate or the semiconductor element and the thickness information of the line, calculate one three-dimensional coordinate of one portion of the line using each extracted two-dimensional coordinate, and generate the three-dimensional image of the line based on the calculated three-dimensional coordinates.

In the line shape measuring device according to the present invention, the control unit may extract each two-dimensional coordinate of each point in each two-dimensional image corresponding to each of the plurality of portions of the line by repeating, from the start to the end of the line, an operation of extracting each two-dimensional coordinate of each point in each two-dimensional image corresponding to one portion of the line from each two-dimensional image of the semiconductor device acquired by each camera using the connection position information of the line pair substrate or the semiconductor element and the thickness information of the line, calculating each three-dimensional coordinate of each of the plurality of portions of the line using each two-dimensional coordinate in each two-dimensional image corresponding to each of the plurality of portions of the line extracted, and generating the three-dimensional image from the start to the end of the line based on each three-dimensional coordinate of the plurality of portions of the line calculated.

In this way, the two-dimensional coordinates of the points on the line image are extracted from the two-dimensional image of the entire semiconductor device captured by the camera by specifying the line image from the two-dimensional image of the entire semiconductor device using the line pair substrate or semiconductor element connection position information and the line thickness information. Thus, a line shape measuring apparatus capable of measuring the shape of a line with high accuracy and in a short time can be provided.

In the line shape measuring apparatus according to the present invention, the cameras may be disposed on both sides of the line so that the optical axis intersects with the extending direction of the line.

By arranging the cameras in this manner, the difference in the two-dimensional coordinates of each point in each two-dimensional image corresponding to one portion of the line captured by each camera becomes large, the three-dimensional coordinates of one portion of the line can be calculated with good accuracy, and the accuracy of the shape measurement of the line can be improved.

In the line shape measuring device of the present invention, the control section may perform the shape inspection of the line based on the generated three-dimensional image of the line, may perform the shape inspection of the line by comparing the generated three-dimensional image of the line with a reference shape of the line, or may perform the shape inspection of the line by extracting a shape parameter of the line from the generated three-dimensional image of the line and comparing the extracted shape parameter with a reference value of the shape parameter.

This enables various shape measurements and shape inspections of the wire.

A line three-dimensional image generating method of the present invention is a line three-dimensional image generating method of a semiconductor device including: a substrate; a semiconductor element mounted on the substrate; and a line connecting an electrode of the semiconductor element with an electrode of the substrate, or connecting one electrode of the semiconductor element with another electrode of the semiconductor element, the line three-dimensional image generating method comprising: an imaging step of imaging two-dimensional images of the semiconductor device by a plurality of cameras, respectively; and a three-dimensional image generating step of generating a three-dimensional image of the lines from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using connection position information of the line to the substrate or the semiconductor element and thickness information of the lines.

In this way, by using pattern matching of the connection position information of the line to the substrate or the semiconductor element and the thickness information of the line, a three-dimensional image of the line is generated from each two-dimensional image of the semiconductor device acquired by each camera, and therefore, a three-dimensional image can be generated in a short time with high accuracy.

In the line three-dimensional image generating method of the present invention, the three-dimensional image generating step may also include: a two-dimensional coordinate extraction step of extracting two-dimensional coordinates of each point in each two-dimensional image corresponding to one portion of a line from each two-dimensional image of the semiconductor device acquired by each camera, using connection position information of the line pair substrate or the semiconductor element and thickness information of the line; a three-dimensional coordinate calculating step of calculating a three-dimensional coordinate of a part of the line using the extracted two-dimensional coordinates; and an image generation step of generating a three-dimensional image of the line based on the calculated three-dimensional coordinates.

In the line three-dimensional image generating method according to the present invention, the two-dimensional coordinate extracting step may extract the two-dimensional coordinates of each point in each two-dimensional image corresponding to each of the plurality of portions of the line by repeating the following operation from the beginning to the end of the line, the operation is to extract two-dimensional coordinates of each point in each two-dimensional image corresponding to one portion of the wire from each two-dimensional image of the semiconductor device acquired by each camera using connection position information of the wire with respect to the substrate or the semiconductor element and thickness information of the wire, and the three-dimensional coordinate calculating step calculates three-dimensional coordinates of a plurality of portions of the wire using the extracted two-dimensional coordinates in each two-dimensional image corresponding to the plurality of portions of the wire, the image generation step generates a three-dimensional image of the line from the open end to the end based on the calculated three-dimensional coordinates of the plurality of portions of the line.

In this way, the two-dimensional coordinates of the points on the line image can be extracted in a short time from the two-dimensional image of the entire semiconductor device by specifying the line image from the two-dimensional image of the entire semiconductor device captured by the camera using the line pair substrate or semiconductor element connection position information and the line thickness information.

A line shape measuring method of the present invention is a line shape measuring method of a semiconductor device including: a substrate; a semiconductor element mounted on the substrate; and a wire connecting an electrode of the semiconductor element with an electrode of the substrate, or connecting one electrode of the semiconductor element with another electrode of the semiconductor element, the method for measuring a shape of the wire comprising: an imaging step of imaging two-dimensional images of the semiconductor device by a plurality of cameras, respectively; a three-dimensional image generating step of generating a three-dimensional image of the lines from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using connection position information of the line to the substrate or the semiconductor element and thickness information of the lines; and a measuring step of performing shape measurement of the line based on the generated three-dimensional image of the line.

In addition, the line shape measuring method of the present invention may include: a checking step of performing shape checking of the line based on the generated three-dimensional image of the line, the checking step performing shape checking of the line by comparing the generated three-dimensional image of the line with a reference shape of the line. In addition, the checking step may perform the shape check of the line by extracting a shape parameter of the line from the generated three-dimensional image of the line and comparing the extracted shape parameter with a reference value of the shape parameter.

This enables various shape measurements and shape inspections of the wire.

ADVANTAGEOUS EFFECTS OF INVENTION

The invention provides a line shape measuring device capable of measuring the shape of a line with high precision and in a short time.

Drawings

Fig. 1 is a vertical view showing a line shape measuring apparatus according to an embodiment.

Fig. 2 is a plan view showing a line shape measuring apparatus according to an embodiment.

Fig. 3 is a flowchart showing the operation of the line shape measuring apparatus according to the embodiment.

Fig. 4 is a perspective view showing the arrangement of the camera and the wire of the wire shape measuring apparatus according to the embodiment.

Fig. 5 is an explanatory diagram showing a two-dimensional image of a line captured by a camera disposed on the Y direction positive side of the semiconductor device of the line shape measuring apparatus of the embodiment.

Fig. 6 is an explanatory diagram showing a two-dimensional image of a line captured by a camera disposed on the Y direction negative side of the semiconductor device of the line shape measuring apparatus of the embodiment.

Detailed Description

The line shape measuring apparatus 100 of the embodiment will be described below with reference to the drawings. As shown in fig. 1 and 2, the line shape measuring apparatus 100 is an apparatus for measuring the shape of a line 30 of a semiconductor device 10, and the semiconductor device 10 includes a substrate 11, a semiconductor element 20 mounted on the substrate 11, and the line 30 connecting an electrode 25 of the semiconductor element 20 and an electrode 12 of the substrate 11. The line shape measuring apparatus 100 includes: a plurality of cameras 41 to 44 for capturing two-dimensional images of the semiconductor device 10; and a control unit 50 for inspecting the shape of the line 30 based on the two-dimensional images acquired by the cameras 41 to 44. In the following description, the X direction and the Y direction are directions perpendicular to each other on a horizontal plane, and the Z direction is a vertical direction.

As shown in fig. 2, the cameras 41 and 42 are arranged such that optical axes 41a and 42a extend in the X direction, and are arranged such that the semiconductor device 10 is imaged obliquely from above in the X direction. The cameras 43 and 44 are arranged so that the optical axes 43a and 44a extend in the Y direction, and are arranged so as to capture an image of the semiconductor device 10 from obliquely above in the Y direction. Therefore, the cameras 41 and 42 are disposed on both sides of the line 30 extending in the Y direction so that the optical axes 41a and 42a intersect the line 30 extending in the Y direction, and the cameras 43 and 44 are disposed on both sides of the line 30 extending in the X direction so that the optical axes 43a and 44a intersect the line 30 extending in the X direction. The cameras 41 to 44 are connected to the control unit 50, and data of images acquired by the cameras are input to the control unit 50. The control Unit 50 is a computer including a Central Processing Unit (CPU) 51 for performing information Processing therein and a memory 52 for storing data, programs, and the like.

Next, the operation of the line shape measuring apparatus 100 according to the embodiment will be described with reference to fig. 3 to 6. In the following description, the following description is assumed to be the case: as shown in fig. 4, a three-dimensional image of the line 30 is generated based on a two-dimensional image obtained by imaging the line 30 extending in the X direction between the electrode 25 of the semiconductor element 20 and the electrode 12 of the substrate 11 with a camera 43 arranged obliquely above the line 30 on the Y direction positive side and a two-dimensional image obtained by imaging the line 30 with a camera 44 arranged obliquely above the line 30 on the Y direction negative side, and the shape of the line 30 extending in the X direction is inspected using the generated three-dimensional image. In fig. 4, reference numerals 35 to 37 and 39 denote portions of the line 30 located in a two-dimensional coordinate detection region 60 (which will be described later with reference to fig. 5 and 6), and the two-dimensional coordinate detection region 60 detects two-dimensional coordinates of the set line 30 at predetermined intervals Δ X between X axes connecting the start 31 and the end 32 of the line 30.

As shown in step S101 of fig. 3, the CPU 51 of the control section 50 reads out from the memory 52 the coordinates (xs, ys), (xe, ye) of the start 31 of the electrode 25 connected to the semiconductor element 20 and the end 32 of the electrode 12 connected to the substrate 11 of the line 30. Here, each coordinate is information of the connection position of the line 30 to the semiconductor element 20. Further, the CPU 51 of the control section 50 reads out the diameter of the wire 30 as the thickness information of the wire 30 from the memory 52.

Then, the control unit 50 captures an image of the semiconductor device 10 by the camera 43 and the camera 44 as shown in step S102 in fig. 3, and stores the captured image in the memory 52 as shown in step S103 in fig. 3.

When the camera 43 disposed on the Y-direction positive side of the semiconductor device 10 captures an image of the line 30, the two-dimensional image of the line 30 acquired by the camera 43 becomes an image that curves to the Y-direction negative side in accordance with a change in the height of the line 30 as shown in fig. 5. When the line 30 is imaged by the camera 44 disposed on the Y-direction negative side of the semiconductor device 10, the two-dimensional image of the line 30 acquired by the camera 44 is an image that curves toward the Y-direction positive side in accordance with a change in the height of the line 30, as shown in fig. 6.

Then, as shown in step S104 of fig. 3 and fig. 5, the control unit 50 sets a two-dimensional coordinate detection area 60 for detecting the two-dimensional coordinates of the line 30 at predetermined intervals Δ X in the middle of the X axis connecting the start 31 and the end 32 of the line 30 in the image acquired by the camera 43. Then, as shown in step S105 of fig. 3, the control unit 50 searches the two-dimensional coordinate detection area 60 for a linear image having the same thickness as the diameter of the line 30 by using pattern matching. Then, the control unit 50 detects an image having the same thickness as the diameter of the wire 30, acquires two-dimensional coordinates of the center point of the image as (x31, y31), (x32, y32), and (x33, y33), and stores the two-dimensional coordinates in the memory 52. The two-dimensional coordinates (x31, y31), the two-dimensional coordinates (x32, y32), and the two-dimensional coordinates (x33, y33) are two-dimensional coordinates corresponding to the portions 35 to 36 of the line 30 shown in fig. 4. Then, the control unit 50 repeats the operation of acquiring the two-dimensional coordinates from the open end 31 to the distal end 32, and acquires the two-dimensional coordinates (x31, y31) to the two-dimensional coordinates (x3e, y3e) of the center point of the image having the same thickness as the diameter of the line 30 in all the two-dimensional coordinate detection regions 60 from the open end 31 to the distal end 32. These two-dimensional coordinates are two-dimensional coordinates corresponding to the portions 35 to 39 of the line 30, respectively.

Similarly, as shown in fig. 6, the control unit 50 sets a two-dimensional coordinate detection area 60 in the image acquired by the camera 44, and searches for a linear image having the same thickness as the diameter of the line 30 in the two-dimensional coordinate detection area 60 by using pattern matching. Then, the controller 50 detects an image having the same thickness as the diameter of the wire 30, acquires two-dimensional coordinates of the center point of the image as (x41, y41) to (x4e, y4e), and stores the two-dimensional coordinates in the memory 52. These two-dimensional coordinates are two-dimensional coordinates corresponding to the portions 35 to 39 of the line 30, respectively. Then, if the control unit 50 determines yes in step S106 of fig. 3, it proceeds to step S107 of fig. 3.

Since the two-dimensional coordinates (x31, y31) obtained from the image of the camera 43 and the two-dimensional coordinates (x41, y41) obtained from the image of the camera 44 in step S105 of fig. 3 are two-dimensional coordinates corresponding to the same portion 35 of the line 30 shown in fig. 4, the three-dimensional coordinates of the portion 35 of the line 30 can be calculated from the two-dimensional coordinates and the position of each camera 43, 44. Similarly, the two-dimensional coordinates (x32, y32) and the two-dimensional coordinates (x33, y33) obtained from the image of the camera 43 and the two-dimensional coordinates (x42, y42) and the two-dimensional coordinates (x43, y43) obtained from the image of the camera 44 are two-dimensional coordinates corresponding to the same portions 36 and 37 as the line 30 shown in fig. 4, and the three-dimensional coordinates of the portions 36 and 37 of the line 30 can be calculated from these coordinates.

Therefore, in step S107 in fig. 3, the controller 50 calculates three-dimensional coordinates of the plurality of portions 35 to 39 from the open end 31 to the distal end 32 of the line 30 shown in fig. 4 based on the two-dimensional coordinates (x31, y31) to (x3e, y3e) from the open end 31 to the distal end 32 of the line 30 acquired by the camera 43, the two-dimensional coordinates (x41, y41) to (x4e, y4e) from the open end 31 to the distal end 32 of the line 30 acquired by the camera 44, and the positions of the camera 43 and the camera 44.

Then, in step S108 of fig. 3, the control unit 50 generates a three-dimensional image of the line 30 by connecting the calculated three-dimensional coordinates of the plurality of portions 35 to 39. Therefore, the three-dimensional image of the line 30 becomes a curved line curved three-dimensionally.

In step S109 of fig. 3, control unit 50 measures the shape and size of line 30 based on the generated three-dimensional image of line 30. The controller 50 may compare the generated three-dimensional image of the line 30 with a reference shape such as a reference line arc shape of the line 30, detect a difference in size between the two, and determine that the shape of the line 30 is abnormal when the difference exceeds a predetermined threshold value.

The control unit 50 may measure shape parameters of the wire 30, such as a height from the start 31 of the wire 30, that is, a loop height, a thickness of the pressure-bonded ball formed at the start 31, and a diameter of the pressure-bonded ball, from the generated three-dimensional image of the wire 30, and compare the measured shape parameters with reference values to perform inspection.

As described above, the line shape measuring apparatus 100 generates a three-dimensional image of the line 30 from the two-dimensional images of the semiconductor device 10 acquired by the cameras 43, 44 by using pattern matching of the two-dimensional coordinates (xs, ys), (xe, ye) of the start 31 and end 32 of the line 30 and the diameter of the line 30, and thus can generate a three-dimensional image with good accuracy in a short time. This makes it possible to measure the shape of the wire 30 and inspect the shape thereof with high accuracy and in a short time.

After the inspection of the shape of the line 30 extending in the Y direction, the same processing is performed based on the two-dimensional images captured by the camera 41 and the camera 42, thereby performing shape measurement and shape inspection.

Further, the two-dimensional images acquired by the four cameras 41 to 44, instead of the two cameras 41 and 42 or the cameras 43 and 44, may be processed to generate a three-dimensional image of the line 30. Alternatively, the two-dimensional images of four or more cameras may be processed to generate a three-dimensional image of line 30.

In the above-described embodiment, the line 30 for measuring the shape or inspecting the shape is a line connecting the electrode 25 of the semiconductor element 20 and the electrode 12 of the substrate 11, but is not limited thereto. For example, the present invention is also applicable to the inspection of the shape of the wire 30 in which the semiconductor device 10 is formed by stacking a plurality of semiconductor elements 20 on the substrate 11 and the electrodes 25 of the semiconductor elements 20 in the respective layers, the electrodes 25 of the semiconductor elements 20 in the lowermost layer, and the electrodes 12 of the substrate 11 are continuously connected. In this case, the wire 30 connects one electrode 25 of the semiconductor element 20 of one layer with the other electrode 25 of the semiconductor element 20 of the other layer, and connects the electrode 25 of the semiconductor element 20 of the lowermost layer with the electrode 12 of the substrate 11.

In the case of executing the line shape measuring method using the line shape measuring apparatus 100 according to the embodiment, the step of capturing a two-dimensional image of the semiconductor device 10 by a camera and storing the two-dimensional image in the memory 52 as shown in step S102 and step S103 in fig. 3 corresponds to the image capturing step. Further, the step of generating a three-dimensional image of the line 30 from the captured two-dimensional image as shown in steps S104 to S108 of fig. 3 constitutes a three-dimensional image generation step, and the step of measuring the shape of the line 30 based on the three-dimensional image as shown in step S109 of fig. 3 constitutes a measurement step. Further, the step of inspecting the shape of the line 30 based on the three-dimensional image constitutes an inspection step as shown in step S109 in fig. 3.

Further, the step of extracting two-dimensional coordinates as in step S104 to step S106 in fig. 3 constitutes a two-dimensional coordinate extraction step, the step of calculating three-dimensional coordinates based on the extracted two-dimensional coordinates as in step S107 in fig. 3 constitutes a three-dimensional coordinate calculation step, and the step of generating a three-dimensional image of the line 30 from the calculated three-dimensional coordinates as in step S108 in fig. 3 constitutes an image generation step.

In addition, when the line three-dimensional image generation method is executed using the line shape measurement device 100 of the embodiment, the step of capturing a two-dimensional image of the semiconductor device 10 by a camera and storing the two-dimensional image in the memory 52 as shown in step S102 and step S103 in fig. 3 corresponds to the image capturing step. Further, the three-dimensional image generation step is constituted by the steps of generating a three-dimensional image of the line 30 from the captured two-dimensional image as in steps S104 to S108 of fig. 3.

Description of the symbols

10: semiconductor device with a plurality of semiconductor chips

11: substrate

12. 25: electrode for electrochemical cell

20: semiconductor device with a plurality of semiconductor chips

30: thread

31: beginning of opening

32: end tip

41-44: camera with a camera module

41a to 44 a: optical axis

50: control unit

51：CPU

52: memory device

60: two-dimensional coordinate detection area

100: line shape measuring device