阅读说明：本技术 亚带隙电压驱动的发光二极管的应用及光耦合器件 (Application of light-emitting diode driven by sub-band gap voltage and optical coupling device ) 是由 狄大卫 连亚霄 幸世宇 兰东辰 赵保丹 郭兵兵 于 2021-08-02 设计创作，主要内容包括：一种亚带隙电压驱动的发光二极管的应用及光耦合器件,属于光电子器件与技术、光通信技术与系统领域。本发明的目的是设计并制备了一系列可在显著低于带隙的驱动电压下发光材料并应用于发光二极管的亚带隙电压驱动的发光二极管的应用及光耦合器件。本发明发光材料在发光二极管上的应用,发光二极管在低于70%带隙电压的驱动电压下发光,特别是在低于50%带隙电压的驱动电压下发光。本发明在脉冲调制情况下可实现光耦合器功能,可实现超低功耗光耦合器集成器件功能,可以研究基于亚带隙电压驱动发光二极管的其它应用,包括低功耗微型化半导体器件、超高频电信号传输、超低功耗的光通信系统、超低功耗光学计算、光学制冷、超低功耗光学探测等。(An application of a light emitting diode driven by sub-band gap voltage and an optical coupling device belong to the fields of optoelectronic devices and technologies, optical communication technologies and systems. The invention aims to design and prepare a series of applications of light-emitting diodes which can emit light materials at a driving voltage which is obviously lower than a band gap and are applied to sub-band gap voltage driving of the light-emitting diodes, and an optical coupling device. The luminescent material of the invention is applied to the light-emitting diode, and the light-emitting diode emits light under the driving voltage lower than 70% of the band gap voltage, particularly under the driving voltage lower than 50% of the band gap voltage. The invention can realize the function of the optical coupler under the condition of pulse modulation, can realize the function of the integrated device of the optical coupler with ultra-low power consumption, and can research other applications of the light-emitting diode driven by the sub-band gap voltage, including low-power consumption miniaturized semiconductor devices, ultrahigh frequency electric signal transmission, ultra-low power consumption optical communication systems, ultra-low power consumption optical calculation, optical refrigeration, ultra-low power consumption optical detection and the like.)

1. The application of the light-emitting diode driven by the sub-band gap voltage is characterized in that: use of a luminescent material in a light emitting diode emitting light at a drive voltage below 70% bandgap voltage, in particular at a drive voltage below 50% bandgap voltage.

2. Use of a sub-bandgap voltage driven light emitting diode according to claim 1, wherein: the luminescent material comprises one or more of perovskite material, organic small molecule luminescent material, organic polymer luminescent material, III-V group semiconductor material, II-VI group semiconductor material, halide material, oxide material, IV group material, nano crystal, two-dimensional material, nano line and rare earth material.

3. Use of a sub-bandgap voltage driven light emitting diode as claimed in claim 1 or claim 2 wherein: the light emitting diode is applied to an optical coupling device.

Technical Field

The invention belongs to the fields of optoelectronic devices and technologies, optical communication technologies and systems.

Background

At present, semiconductor materials have been developed from the conventional application in integrated circuits to other increasingly widespread applications, and from the first inorganic semiconductor to organic semiconductor, and then to the organic-inorganic hybrid semiconductor combining the respective excellent properties of organic semiconductor and inorganic semiconductor, the typical applications of which are represented by the current field effect transistor, light emitting diode, solar cell, photodetector, and the like, the semiconductor materials have been increasingly important in promoting the social development.

At present, the preparation process and the material process of a semiconductor device are rapidly developed and are widely applied in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, illumination application, high-power conversion and the like, and particularly, the light-emitting diode has the outstanding advantages and occupies an increasingly important position in the fields of illumination and communication. With the remarkable progress of microelectronic technology and packaging technology, it is possible to integrate a semiconductor light emitting diode as a signal generating device, in combination with a signal receiving device, a microprocessor, and a memory, for realizing photocoupling communication, and these subsystems can be integrated for miniaturization in the near future. The miniaturization of the device and the system can greatly reduce the power consumption of equipment, but one challenge brought by the miniaturization is that due to the limitation of the size of the system, a system power supply system, particularly a battery, cannot occupy too much space, but enough cruising ability can be ensured, so that lower power consumption requirements are provided for each functional device for realizing the functions of the device, for example, when the optical coupling device carries out signal communication, the total power consumption of the device is reduced on the premise that the signal light receiving device can distinguish effective signals, and the pressure of the power supply system is favorably relieved.

The demand of human society for energy-saving and environment-friendly technologies is increasing day by day, the development of new technologies makes it possible for renewable energy sources such as solar energy, wind energy, tidal energy and the like to replace fossil fuels, a photovoltaic solar cell is taken as a core component of solar power generation, the position in the renewable energy technology is important, but the voltage output by a single-junction solar cell with high efficiency is limited at present, and if the single-junction solar cell or a photodiode is taken as a driving power supply of electronic equipment, a plurality of solar cells are generally required to be connected in series or a multi-junction laminated cell is required to realize effective power supply. At present, most integrated circuits adopt lower supply voltage, and the supply voltage adopted in a combined logic gate circuit formed by a plurality of CMOS, field effect transistors and the like is 1.5V or even lower. In order to realize higher integration density and future optoelectronic integrated circuits, the energy consumption of devices needs to be further reduced, and if the devices can be directly powered by a digital logic circuit or powered by a single-junction solar cell, the complexity of a power supply system circuit can be effectively reduced, and the additional energy consumption brought by an auxiliary circuit can be reduced. Therefore, reducing the power consumption of functional devices is an important direction in the development of semiconductor materials and devices, and an effective way to reduce the power consumption is to reduce the operating voltage of functional devices in the system.

The application of light emitting diodes in lighting has been developed for many years and the technology is becoming more and more mature, researchers have proposed a series of standard parameters based on the application to define the performance of light emitting diodes, such as threshold voltage, power, forward current, reverse leakage current and light color, and the threshold voltage is now applied to many new material light emitting diodes as an important concept derived from inorganic semiconductor light emitting diodes. For a conventional inorganic semiconductor, the thickness of a PN junction is in the order of micrometers, while the overall thickness of various novel diodes is in the order of nanometers, and if a material with higher carrier transport capability is adopted, smaller parasitic resistances may be obtained, the partial pressure generated by the parasitic resistances is relatively reduced, the effective partial pressure on a light emitting layer is relatively larger, and theoretically, the threshold voltage is reduced. At present, most of light emitting diodes based on novel materials introduce organic charge transport layers at two ends of a light emitting layer so as to limit electron hole pairs in the light emitting layer to the maximum extent to obtain higher carrier concentration and further achieve the aim of high internal quantum efficiency. However, the organic charge transport layer generally has a lower carrier density and mobility, which results in a larger series resistance, so that during the operation of the device, most of the voltage drop across the device falls on the organic charge transport layer, and the voltage drop actually falling on the light emitting layer is lower. If a charge transport layer with higher carrier transport capability is adopted and electron hole pairs are effectively restrained in the light-emitting layer to ensure effective light emission, the voltage drop on the charge transport layer can be greatly reduced. Meanwhile, ohmic contact between the charge transport layer and the electrode must be realized, and barrier resistance caused by different materials is small and negligible, so that quasi-Fermi level splitting in the light emitting layer can be further improved.

Conventionally, a conduction band and a valence band are actually a series of energy levels, electrons at different energy levels of the conduction band and holes at different energy levels of the valence band can be subjected to radiation recombination under common conditions, energy generated during radiation recombination is emitted in the form of photons, the number of photons at a certain energy position generated by radiation is the largest after the radiation recombination probability at different energy levels and wave vectors and state density are comprehensively considered, and the photons are reflected to a spectrum detection system to be the peak value of an electroluminescence spectrum.

Although conventional diodes have light output when driven below the photonic bandgap voltage, more voltage is used to overcome the barrier difference across the material interface and to fill in shallow level defects due to the bandgap and defects, when the work functions of the electrodes and the charge transport layer are very close, the barriers for charges to reach the transport layer and the light emitting layer are very small and the energy required to be consumed is very low. In some emerging fields of light emitting diodes, such as organic, perovskite and quantum dot light emitting diodes, it is generally considered that the lowest theoretical driving voltage for generating electroluminescence is equal to the band gap voltage of the light emitting substance due to energy conservation, and extra energy is needed to obtain a threshold voltage lower than the band gap.

On one hand, the existing light emitting diode technology has the following defects that the light emitting diode is generally considered to have a threshold starting voltage determined by a band gap, namely, a driving voltage higher than the threshold starting voltage is loaded on an electrode of a light emitting diode device, and the device can radiate photons. For ultra-low power consumption optoelectronic integrated devices and circuits, the low supply voltage provides a challenge for effective application of light emitting diodes in systems. On the other hand, the sensitivity of the currently commonly used optical coupling device is low, when optical coupling communication is performed, the background noise of the prepared optical coupling device is high, most of noise signals are filtered to realize effective signal detection, so that the optical detector can respond and effectively transmit data only by needing stronger optical signals, and the low power consumption and miniaturization development of the device are limited.

Disclosure of Invention

The invention aims to design and prepare a series of applications of light-emitting diodes which can emit light materials at a driving voltage which is obviously lower than a band gap and are applied to sub-band gap voltage driving of the light-emitting diodes, and an optical coupling device.

The luminescent material of the invention is applied to the light-emitting diode, and the light-emitting diode emits light under the driving voltage lower than 70% of the band gap voltage, particularly under the driving voltage lower than 50% of the band gap voltage.

The luminescent material comprises one or more of perovskite materials, organic micromolecule luminescent materials, organic polymer luminescent materials, III-V group semiconductor materials, II-VI group semiconductor materials, halide materials, oxide materials, IV group materials, nano crystals, two-dimensional materials, nano wires and rare earth materials.

The light emitting diode is applied to an optical coupling device.

The invention can realize the function of the optical coupler under the condition of pulse modulation, can realize the function of the integrated device of the optical coupler with ultra-low power consumption, and provides an integration and extension research idea among subsystems for researching solar batteries, light-emitting diodes and optical communication. In addition, other applications of the light emitting diode based on the sub-band gap voltage driving can be researched, including low-power-consumption miniaturized semiconductor devices, ultrahigh-frequency electric signal transmission, ultra-low-power-consumption optical communication systems, ultra-low-power-consumption optical calculation, optical refrigeration, ultra-low-power-consumption optical detection and the like.

Drawings

FIG. 1 is a diagram of the working structure of a light emitting diode;

FIG. 2 is a technical route scheme of the present invention;

FIG. 3 is a graph of radiance versus photon count versus voltage for a near infrared perovskite light emitting diode;

FIG. 4 is a spectral plot of a near-infrared perovskite light emitting diode;

FIG. 5 is a spectral plot of a near infrared perovskite light emitting diode at a sub-bandgap voltage;

FIG. 6 is a graph of the variation of the turn-on voltage with the concentration of the transport layer;

FIG. 7 is a graph of luminance versus photon count versus voltage for a green perovskite light emitting diode;

FIG. 8 is a graph of the spectrum of a green perovskite light emitting diode at different voltages;

FIG. 9 is a spectral plot of a green perovskite light emitting diode at a voltage below the bandgap;

FIG. 10 is a graph of the effect of the transport layer on green perovskite light emitting diode performance;

FIG. 11 is a graph of photon number versus voltage for a perovskite light emitting diode at a sub-bandgap voltage;

FIG. 12 is a graph of luminance versus photon count versus voltage for a polymer F8BT light emitting diode;

FIG. 13 is a plot of the spectrum of a polymer F8BT light emitting diode above and below the bandgap voltage;

FIG. 14 is a graph of luminance versus photon number versus voltage for a small molecule Rubene light emitting diode;

FIG. 15 is a spectral plot of a small molecule Rubrene light emitting diode at a voltage below the bandgap;

FIG. 16 is a graph of photon count versus voltage for an organic light emitting diode at a voltage below the bandgap voltage;

FIG. 17 is a graph of luminance versus photon count versus voltage for II-VI quantum dot light emitting diodes;

FIG. 18 is a graph of the spectra of II-VI quantum dot light emitting diodes at voltages below the band gap;

FIG. 19 is a graph of number of photons versus voltage for II-VI quantum dot light emitting diodes at voltages below the bandgap voltage;

FIG. 20 is a graph of luminance versus photon count versus voltage for an inorganic light emitting diode;

FIG. 21 is a graph of photon number versus voltage for an inorganic light emitting diode at a bandgap voltage;

FIG. 22 is a schematic diagram of the operation of a prior art inorganic light emitting diode;

FIG. 23 is a schematic diagram of the operation of a light emitting diode at zero bias voltage;

FIG. 24 is a schematic diagram of the operation of a light emitting diode at a non-zero forward bias voltage;

FIG. 25 is a schematic diagram of an ultra-short pulse-driven LED;

FIG. 26 is a waveform diagram of the ultra-short pulse driving LED operation;

fig. 27 is a schematic technical view for increasing a communication rate;

FIG. 28 is a waveform diagram that may achieve increased communication rates;

fig. 29 is a schematic structural view of an optical coupler.

Detailed Description

The invention explains the preparation scheme, the working mechanism and the technical application of the light-emitting diode driven by the sub-band gap voltage, takes the solution method for preparing the light-emitting diode as an embodiment, adopts the extremely weak light detection scheme taking a high-sensitivity photoelectric detector as a core, and fully proves the feasibility of the light-emitting diode with the driving voltage obviously lower than the band gap by combining theories and experiments, and simultaneously, the light-emitting diode driven by the low voltage also provides a reliable novel low-energy-consumption light source for silicon-based photonics. The invention has the beneficial effects that: the electroluminescent device driven by the voltage lower than the band gap voltage is realized, the ultra-low power consumption optical coupling device and system are realized by combining a high-sensitivity detector, the feasibility of applying the sub-band gap voltage and ultra-short electric pulse driven light emitting diode to the ultra-low power consumption optical coupling device and system and the ultra-high speed low power consumption device and system is verified, meanwhile, the electroluminescent photons with the energy higher than the silicon band gap are generated by utilizing the driving voltage lower than the silicon band gap, and a new direction is expanded for the integration of the silicon optoelectronic device. The sub-band gap voltage driven light emitting diode prepared by the invention can be integrated with other low voltage driving device systems, and provides a new technical scheme for realizing ultra-low power consumption semiconductor devices, ultra-low voltage signal transmission devices, ultra-low power consumption optical communication systems, ultra-low power consumption optical computation, ultra-low power consumption optical detection, optical refrigeration, photoelectric integrated circuits and chips.

If the voltage (band gap voltage) corresponding to the band gap of the light-emitting material in the light-emitting diode isV _g（V _g = E _g/q，E _gIs the corresponding band gap of the light-emitting material of the light-emitting diode,qelementary charge) capable of emitting light at a drive voltage below 70% bandgap voltage, in particular below 50% bandgap voltage. For example, the light emitting diode operates in a sub-bandgap low-voltage system, a low-voltage source such as a single-junction solar cell can be used as a driving source, energy consumption per bit can be up to hundreds of picojoules or less when the light emitting diode operates with pulse voltage, and the technology can be applied to an ultra-low power consumption system, including devices such as a light emitting transistor, a field effect transistor, an electrochemical cell, a semiconductor laser, a light emitting diode and a photovoltaic solar cell.

The thin film type light emitting diode generally comprises an electrode, a charge transport layer, a light emitting layer, and the like. At present, most of light emitting diodes based on novel materials (such as organic semiconductors, quantum dots, perovskites and the like) introduce organic charge transport layers at two ends of a light emitting layer, and aim to limit electron hole pairs in the light emitting layer to the maximum extent so as to obtain higher carrier concentration and further realize higher light emitting quantum efficiency. However, the organic charge transport layer generally has a lower carrier density and mobility, which results in a larger series resistance, so that during the operation of the device, most of the voltage drop across the device falls on the organic charge transport layer, and the voltage drop actually falling on the light emitting layer is lower. If a charge transport layer with high carrier transport ability is used and electron-hole pairs are confined in the light emitting layer to ensure effective light emission, the voltage drop on the charge transport layer can be greatly reduced.

The invention designs and prepares a series of light emitting diodes with working voltage lower than band gap, on one hand, potential barriers between a charge transport layer and an electrode and between the charge transport layer and a light emitting layer are adjusted by regulating the charge transport layer and the light emitting layer to reduce contact resistance, and the charge transport layer with high carrier transport capacity is adopted to ensure that the charge transport layer has minimum voltage drop to reduce series resistance, so that the effective voltage drop on the light emitting layer is the highest, and meanwhile, electron hole pairs are restricted in the light emitting layer to realize effective radiative recombination. On the other hand, the signal acquisition capability of the ultra-weak light is greatly improved by combining a high-sensitivity signal acquisition system. And finally, integrating the light emitting diode driven by the sub-band gap voltage with a high-sensitivity detection device to realize the generation, acquisition and processing of optical signals under low driving voltage.

The luminescent substance of the light emitting diode may be one or a combination of more of perovskite materials, organic small molecule light emitting materials, organic polymer light emitting materials, group III-V semiconductor materials, group II-VI semiconductor materials, halide materials, oxide materials, group IV materials, nanocrystals, two-dimensional materials, nanowires, rare earth materials.

When the sub-band gap voltage is subjected to pulse modulation, the functions of an optical coupler and a memristor can be realized, the light emitting diode adopting the sub-band gap voltage pulse modulation can be used as an ultra-low voltage component in a low-voltage light source, a low-voltage optical switch, an optical encoder, an optical decoder, an optical chip or an optical logic circuit in an optical communication device, and a new technical scheme can be provided for realizing system integration among ultra-low power consumption optical coupler integrated devices.

The light-emitting diode and other low-voltage devices can be researched to carry out system integration, and a new technical scheme is provided for realizing ultra-low power consumption miniaturized semiconductor devices, ultra-low voltage signal transmission devices and ultra-low power consumption optical communication systems, for example, the light-emitting diode and a solar cell are integrated into a self-powered light-emitting system, and the light-emitting diode and other semiconductor devices are integrated into a micro photoelectron chip. The light-emitting diode based on the description in the invention can be applied to the fields of ultra-low power consumption optical calculation, optical refrigeration, radiation refrigeration, ultra-low power consumption optical detection and the like.

The invention provides an ultra-low power consumption light-emitting diode and an optical coupling device based on sub-band gap voltage operation, wherein the light-emitting diode can emit light under the driving voltage lower than 70% of the semiconductor band gap, and can work under the driving voltage lower than 50% of the semiconductor band gap.

On one hand, the existing light emitting diode technology has the following defects that the light emitting diode is generally considered to have a threshold starting voltage determined by a band gap, namely, a driving voltage higher than the threshold starting voltage is loaded on an electrode of a light emitting diode device, and the device can radiate photons. For ultra-low power consumption optoelectronic integrated devices and circuits, the low supply voltage provides a challenge for effective application of light emitting diodes in systems. On the other hand, the sensitivity of the currently commonly used optical coupling device is low, when optical coupling communication is performed, the background noise of the prepared optical coupling device is high, most of noise signals are filtered to realize effective signal detection, so that the optical detector can respond and effectively transmit data only by needing stronger optical signals, and the low power consumption and miniaturization development of the device are limited. The technical problem to be solved by the present invention is to design and prepare a series of light emitting diodes capable of emitting light at a driving voltage significantly lower than the bandgap, and to show the technical feasibility of effective operation of light emitting diodes with a driving voltage significantly lower than the bandgap of the semiconductor. On the other hand, through analyzing the working principle of the common photoelectric detector, the sensitivity of the common photoelectric detector is lower, so that the common photoelectric detector is difficult to detect electroluminescent photons under low working voltage, for a high-sensitivity detector, the sensitivity is higher than that of the low-sensitivity detector by several orders of magnitude due to high signal-to-noise ratio, photons generated under sub-band gap voltage can still be detected, and the light emitting diode working in the sub-band gap can be integrated with the photoelectric detector by combining the high-sensitivity detector. Based on the above two points, the invention realizes a series of light emitting diodes with driving voltage significantly lower than band gap voltage, and through the description of the working principle of the device, the invention provides the design elements of the low-voltage light emitting diode, including but not limited to the fact that the charge transport layer has higher carrier transport capability, and very small contact potential barriers are arranged among the electrode, the charge transport layer and the light emitting layer, so that the device has very low series resistance and very high carrier injection efficiency, the maximum partial pressure in the light emitting layer under the same driving voltage is realized, that is, the maximum quasi-fermi energy level splitting is obtained, and finally, electrons and holes in the light emitting layer are effectively compounded to radiate photons. By explaining the signal acquisition structure of the photoelectric detector, the advantages of the high-sensitivity detector in weak light detection are explained compared with the working modes of the low-sensitivity detector and the high-sensitivity detector. And finally, performing system integration on the light emitting diode driven by the sub-band gap voltage and the high-sensitivity detector to realize the ultra-low power consumption optical coupling integrated device. The technology based on the invention can be expanded to the system integration of the light emitting diode, a silicon optoelectronic device, a digital logic circuit and other low-voltage devices, and comprises a low-power miniaturized semiconductor device, an ultra-low-voltage signal transmission device, an ultra-low-power optical communication system, ultra-low-power optical computation, optical refrigeration, ultra-low-power optical detection and the like.

For the purpose of illustrating the technical method of the present invention, the present invention is illustrated by taking the commonly used planar device structure as an example.

Fig. 1 is a diagram showing a working structure of a perovskite light emitting diode, an organic polymer light emitting diode device, an organic small molecule light emitting diode device, a quantum dot light emitting diode, and other novel light emitting devices, where P _1 is a power supply, N _1 is an anode electrode, N _2 is a hole transport layer (electron blocking layer), N _3 is a light emitting layer, N _4 is an electron transport layer (hole blocking layer), and N _5 is a cathode electrode. At present, most high-efficiency devices adopt a charge transport layer with low carrier mobility, so that a large parasitic resistance is generated, and a light emitting layer is usually thin, so that most voltage drops of the devices during operation fall on the charge transport layer. When the hole transmission layer and the electron transmission layer are changed to be made of high-carrier mobility materials, the parasitic resistance of the hole transmission layer and the electron transmission layer is reduced, the total voltage drop required by the operation of the device can be reduced, the overall heat loss of the device can be reduced, and the technical scheme can be provided for low-voltage large-current devices through larger current due to the reduction of the total resistance of the device.

The technical solution of the present invention for solving the current technical problem is shown in fig. 2

Step L1 illustrates the working principle of the light emitting diode, and it is the carrier injection and carrier transport capability of the electrode and the charge transport layer that have a large influence on the device working voltage. The barrier height between each layer of the light-emitting diode and the mobility, the carrier concentration and the defect state density of each layer can obviously influence the transport and injection capacity, so that the electron hole pairs can form efficient radiative recombination in a light-emitting region under low voltage and low current density by optimizing the several factors. And L2, selecting a charge transport layer and a light emitting layer with high carrier mobility and energy level matching, which shows that in common inorganic light emitting diodes, perovskite light emitting diodes, organic polymer light emitting diodes, organic small molecule light emitting diodes and quantum dot light emitting diodes, most of the voltage drop of the device during working is caused on the charge transport layer and the potential barrier due to the carrier mobility of the charge transport layer and the barrier limitation of the charge transport layer and the light emitting layer, the real voltage drop on the light emitting layer is very small, and the quasi-Fermi energy level in the light emitting layer is very small in splitting, so that the concentration of non-equilibrium carriers is very low. Step L3, the principle of the low sensitivity detector measurement is analyzed, illustrating the reason why the low sensitivity detector is difficult to detect for very low photon numbers. Step L4, analyzing the principle of the high-sensitivity detector measurement, illustrates the advantage of the high-sensitivity detector in measuring very low photon counts. Step L5, in combination with the device operating curve, shows that a lower number of photons can be detected when a high-sensitivity detector is applied, and that a light emitting diode is operating at a sub-band gap voltage and can radiate photons, which indicates that under the condition of carrier injection, electron-hole pairs exist and effective radiative recombination can be formed to generate photons. And L6, according to the measurement curve of the high-sensitivity detector, the sub-band gap light-emitting diode and the photoelectric detector can be combined to form a signal transmission device. Step L7, which illustrates the strategy that the led can increase the signal transmission rate, for devices and systems made of the same material, by using the method of lowering the peak level of the led driving source, the time of the rising edge and the falling edge is reduced, and the period of each pulse is reduced, so that the period of each frame of data can be reduced, and the data communication rate can be greatly increased. And L8, integrating the light emitting diode and the high-sensitivity detector into an optical coupling device for optical communication, expanding ideas for researchers, and based on the optical coupling device, carrying out system integration with other ultra-low voltage devices, including low-power miniaturized semiconductor devices, ultra-low voltage signal transmission devices and ultra-low power optical communication systems.

The invention has the beneficial effects that: the design elements for realizing the low-voltage light-emitting diode are provided by explaining the working principle of the series of devices, and the high-sensitivity detector is used for detecting the photons radiated by the light-emitting diode when the light-emitting diode works at the sub-band gap voltage, so that the working voltage of the light-emitting diode can be further proved to be very low, and theoretical and experimental guidance is provided for realizing the ultra-low-power light-emitting diode and the optical coupling device. Based on the working principle of the light-emitting diode, the system integration of the light-emitting diode and other ultra-low voltage devices can be realized, and reference is provided for the ultra-low voltage devices and systems, such as technical reference for realizing ultra-low power consumption miniaturized semiconductor devices, ultra-low voltage signal transmission devices, ultra-low power consumption optical communication systems, ultra-low power consumption optical computation, optical refrigeration and ultra-low power consumption optical detection.

The embodiments of the invention will be described more fully hereinafter with reference to the accompanying drawings in which:

distinction between high and low sensitive photodetectors

Working principle of low-sensitivity photoelectric detector

The reason why it is difficult to detect the optical signal below the sub-photon voltage at present is mainly the following two aspects. Firstly, the inside photon number that produces of emitting diode device is few, the photon quantity that can radiate out the device is still less, because behind the luminous layer is injected into to the electric charge, there is some loss, and each layer material refractive index of luminescent device is higher, the refractive index is low in the environment, the photon of inside production is at outside refraction in-process, most photon can take place the internal reflection at the device inner wall and get into inside the device again, carry out theoretical calculation according to the material refractive index, when guaranteeing that internal quantum efficiency is 100%, under the condition of not having beam coupled structure, its maximum external quantum efficiency is 30%. Secondly, the detector has low detection sensitivity, a probe adopted by a common luminance meter is an area array CCD, an Ocean series spectrometer adopts a linear array CCD, the detector comprises a plurality of calibrated photoelectric detectors adopted at present, such as a silicon-based detector, a four-quadrant detector and an InGaAs detector for measuring an infrared band, the photoelectric detectors are all PIN structures and PN structures based on inorganic semiconductors, signal amplification is not carried out at a signal output end, and acquired optical signals are converted into current signals to be directly output. The host machine for receiving the current signal is an oscilloscope, an acquisition card, a spectrometer and other instrument equipment without amplifying a power signal, and the photoelectric signal is input into the host machine and then is subjected to filtering and noise reduction treatment, so that the detector can receive an effective signal for a stronger optical signal and can effectively respond on the host machine, but for a weaker optical signal, the general detector is difficult to detect. The low-sensitivity detector is designed to improve the signal-to-noise ratio, ensure the validity of signals, carry out filtering treatment and carry out first-stage filtering on weak signals by an internal RC (resistance-capacitance) filtering circuit so as to filter stray signals. In addition, in a detector host, taking a spectrometer as an example, in order to realize smooth and attractive measured curves, multiple times of average filtering, smooth filtering and interpolation filtering are performed, a complete signal can be measured for a stronger signal, but a part of signals can be lost for a weak signal.

Operating principle of high-sensitivity photoelectric detector

At present, more and more high-performance detectors appear, such as acquisition cards based on avalanche photodiodes APD, photomultiplier tube PMT detectors, the avalanche photodiode APD has strong advantages for weak signal detection, has multiplication factors, can be widely applied to weak signal detection and single photon detection, after photoelectric conversion is carried out on the detected weak light signal, high-gain trans-resistance amplification processing is carried out, first-stage amplification is carried out, meanwhile, after being processed by the pi-type filter circuit, the signal is secondarily amplified by a high-gain homodromous amplifying circuit, the output electric signal is subjected to pi-type filtering and pulse shaping to obtain an effective signal, and a noise signal is subjected to notch processing and filtering processing, weak optical signals with high signal-to-noise ratio can be detected, so that extraction of weak signals is possible, and weak signals which are lower than ordinary detectors by orders of magnitude can be detected through a high-sensitivity detector.

Based on the discussion of both the light emitting diode and the photodetector, the feasibility of using a high-sensitivity avalanche photodetector APD for light emitting diode weak light signal detection is explained. When the light emitting diode is driven by a sub-band gap voltage, a common photodetector cannot detect a signal, a very weak photon signal radiated by the light emitting diode is annihilated in the background noise of the photodetector, most devices default to a threshold light-on voltage at this time, and the light emitting diode does not radiate a photon signal. However, the effective signal can still be measured by using the high-sensitivity photoelectric detector, and the detection signal of the high-sensitivity photoelectric detector is compared with the detection signal of the low-sensitivity photoelectric detector, and the light intensity curve trends are the same, which indicates that the light-emitting diode really works at the moment, and photons are radiated out of the light-emitting diode to indicate that the light-emitting diode emits light.

It can be known from the above that, for a semiconductor light emitting diode, under the condition of injecting current, an electron-hole pair is generated and recombined to generate a photon, and the generated photon can be radiated out of the device surface, and at the same time, heat in the environment also affects the dynamic balance of the electron-hole pair in the diode to generate recombination, and only this part of photon is too weak, and light in the environment annihilates the photon emitted by the light emitting diode and needs a detector with ultrahigh sensitivity to detect the photon, but it indicates that the light emitting diode has generated a photon, and under the condition of injecting current, the recombination of the electron-hole pair can radiate the photon.

The invention can detect the photon emitted by the light emitting diode under the sub-band gap voltage by adopting the high-sensitivity detector with the sensitivity of several orders of magnitude higher than that of the conventional detector, which means that the device radiates the photon under the sub-band gap voltage, and can realize the ultra-low power consumption optical coupling integrated device by carrying out system integration on the light emitting diode driven by the sub-band gap voltage and the high-sensitivity detector.

Preparation and characterization of different system light-emitting diodes

1. Preparation process of near-infrared perovskite light-emitting diode device

Preparation method of near-infrared perovskite light-emitting diode

The near-infrared perovskite light emitting diode is prepared on ITO conductive glass, the size of the ITO conductive glass is 12mm x 12mm, and the ITO conductive glass is subjected to ultrasonic cleaning for 15 minutes by 7 steps of deionized water, acetone, isopropanol, deionized water and isopropanol before being used. And putting the cleaned ITO conductive glass into a UV-Ozone cleaning machine for Ozone treatment for 15 minutes, transferring the ITO conductive glass into a glove box filled with high-purity nitrogen, putting the ITO conductive glass on a vacuum spin coater for spin coating of a charge transport material, wherein the name of the charge transport material is zinc oxide (ZnO for short). ZnO is dissolved in ethanol solution, the concentration is 30mg/ml, when the charge transfer material ZnO is coated, a liquid-moving gun with the dosage of 100uL is used for sucking 30uL of charge transfer solution and coating the charge transfer solution on ITO conductive glass, a vacuum spin-coating machine is started to spin-coat the ITO conductive glass at the rotating speed of 5000 rpm/s for 60 s, the ITO conductive glass of the charge transfer material after spin-coating is placed on a hot table and annealed at 150 ℃ for 10 min, and the smooth ZnO film of the charge transfer material is obtained.

And transferring the ITO conductive glass covered with the charge transport material to a glove box filled with high-purity nitrogen for spin coating of PEIE solution, sucking 30uL of the charge transport solution by using a liquid transfer gun with the dosage of 100uL, coating the charge transport solution on the ITO conductive glass, starting a vacuum spin coater, spin-coating for 60 s at the rotating speed of 5000 rpm/s, and placing the ITO conductive glass subjected to spin coating on a hot table for annealing at 100 ℃ for 10 min.

The perovskite precursor solution is NMA₂FA_n–1Pb_nI_3n+1From NMAI, FAI and PbI₂The solution is dissolved in dimethylformamide (DMF for short) according to the molar mass ratio of 2:1.8:2, the concentration of the solution is 0.08 mol/L, and the solution is placed on a 60 ℃ hot bench and stirred for 1 h. Putting the ITO conductive glass on a vacuum spin coater, sucking 30uL of perovskite precursor solution by using 100uL of the process, coating the perovskite precursor solution on the ITO conductive glass with PEIE, starting a button of the vacuum spin coater, spin-coating for 60 s at the rotating speed of 5000 rpm/s, and annealing at 100 ℃ for 10 min to obtain the flat perovskite thin film.

And coating a hole transport layer material polymer triphenyldiamine derivative (abbreviated as Poly-TPD) which is dissolved in chlorobenzene (abbreviated as CB) and has the concentration of 12mg/ml, absorbing 30uL of charge transport layer solution by using 100uL of dosage process, coating the charge transport layer solution on the ITO conductive glass with perovskite, and starting a button of a vacuum spin coater to spin at the rotating speed of 4000 rpm/s for 60 s.

Finally transferring the glass to a vacuum coating machine for evaporating an electrode material MoO₃Au, deposition RateThe light-emitting size can be limited to 5.25mm by a mask plate measured by a quartz crystal oscillating piece²， MoO₃The thickness of (2) is 15nm, and the thickness of metal aluminum Au vapor deposition is 100 nm.

Characterization of near-infrared perovskite light emitting diodes

FIG. 3 shows a graph of Radiance versus photon count versus voltage for a near infrared perovskite light emitting diode, where the left axis is the Radiance (in Wsr)^-1 m^-2) The right axis is Photon counts (in s)^-1) The Voltage (in V) is shown on the horizontal axis, the band gap Voltage of the near-infrared perovskite light emitting diode is 1.56V corresponding to the dotted line in the figure, and the device has the radiance below the band gap Voltage, and the radiance of the device corresponding to the band gap Voltage is already 2W sr^-1 m^-2Indicating that the device has photons radiating out of the device and can be detected by a luminance meter.

Fig. 4 shows an operating spectrum of the near-infrared perovskite light emitting diode device at a voltage higher than a band gap, and is an operating waveform diagram at the voltage higher than the band gap, and it can be seen that the spectral shape of the voltage applied to two ends of the device is not changed when the voltage is changed, which indicates that the device has relatively high spectral stability.

Fig. 5 is a graph showing the operating spectrum of a near-infrared perovskite light emitting diode device at a voltage lower than the band gap, and is a graph showing the operating waveform at the voltage lower than the band gap, and it can be seen that the spectral shape of the voltage applied to the two ends of the device is not changed when the voltage is changed, and further, the operating mechanism of the device for generating fluorescence is the same below the band gap and above the band gap, by combining fig. 4 and fig. 5.

FIG. 6 shows the effect of the thickness variation of the transmission layer on the device performance, where the left vertical axis is the Radiance (in W sr)^-1 m^-2) Voltage (unit is V) on the horizontal axis, and the radiance of the device based on the transmission layers with different concentrations in the graph changes along with the Voltage when the device works, and it can be seen that the starting Voltage also increases along with the increase of the concentration. In order to realize the maximum photon radiation of the light emitting diode at the sub-band gap voltage, the charge transport layer of the device is required to have high carrier mobility, and electricity is requiredOhmic contact is formed between the electrode and the charge transport layer as much as possible, the charge transport layer and the light emitting layer, so that extremely low series resistance in the device is realized, and the most effective carrier injection is formed on the light emitting layer.

Preparation process of green light perovskite light emitting diode device

Preparation method of green light perovskite light emitting diode

The green perovskite light emitting diode is prepared on ITO conductive glass, and the ITO conductive glass cleaning method is as described above. The ITO conductive glass was then transferred to a glove box filled with high purity nitrogen, and the ITO conductive glass was placed on a vacuum spin coater for spin coating of a charge transport material named poly [ (N, N '- (4-N-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine) -alt- (9, 9-di-N-octylfluorenyl-2, 7-diyl) ] (abbreviated as TFB). Dissolving TFB in chlorobenzene solution (CB for short), wherein the concentration is 6mg/ml, when coating the charge transport material TFB, using a liquid transfer gun with the dosage of 100uL to absorb 30uL of charge transport solution to coat on ITO conductive glass, starting a vacuum spin-coating machine to spin at the rotating speed of 3000 rpm/s for 60 s, placing the ITO conductive glass on which the charge transport material is spun on a hot table to anneal for 10 min at 120 ℃, and obtaining the flat TFB film of the charge transport material.

And transferring the ITO conductive glass covered with the charge transfer material to a vacuum coating machine for polar interface LiF evaporation. The pressure of vacuum evaporation is 5 x 10^-4 Pa, the evaporation rate is measured by a quartz crystal oscillation plate, the evaporation rate is 0.01 nm/s, and the evaporation thickness of LiF on the polar interface is 1 nm. And transferring the ITO conductive glass substrate subjected to the evaporation of the polar interface LiF to a glove box filled with high-purity nitrogen for perovskite solution spin coating.

The perovskite precursor solution is PEA_nCs_n-1Pb_nBr_3n+1Consisting of 110mg of lead bromide (PbBr)₂) 64mg of cesium bromide (CsBr) and 24mg of 2-phenethylammonium bromide (PEABr) were dissolved in 1mL of a dimethyl sulfoxide (DMSO) solution at a concentration of 0.3 mol/L, and the solution was stirred on a 60 ℃ hot plate for 1 hour. During spin coating, ITO conductive glass is placed on a vacuum spin coater, and 30uL solution is absorbed by 100uL in the dosage process and is coated on the evaporated polar solutionAnd (3) starting a button of a vacuum spin coater on the ITO conductive glass of the interface and the charge transmission material, spin-coating for 60 s at the rotating speed of 3000 rpm/s, and annealing at 60 ℃ for 10 min to obtain the flat perovskite thin film.

Putting the ITO conductive glass coated with perovskite into a vacuum coating machine for vapor deposition of charge transport material with the name of 2,2' - (1, 3, 5-benzimidazole) -tri (1-phenyl-1-H-benzimidazole) (TPBi for short), wherein the pressure of vacuum vapor deposition is 5 x 10^-4 Pa, the evaporation rate is measured by a quartz crystal oscillating piece, the evaporation rate is 0.1 nm/s, and the thickness of TPBi is 40 nm.

After the charge transport material TPBi is evaporated, the evaporated metal mask is replaced, and the light emitting size can be limited to 5.25mm through the mask²The evaporation electrode materials of lithium fluoride LiF and Al are evaporated, the evaporation rate is measured by a quartz crystal oscillation plate, the evaporation rate of the lithium fluoride LiF is 0.01 nm/s, the thickness of LiF is 1nm, and the evaporation rate of the metal aluminum Al is 100 nm.

Characterization of Green perovskite light emitting diodes

FIG. 7 is a graph of Luminance vs. photon number vs. voltage for a green perovskite LED, where the left axis is Luminance luminence (in cd m)^-2) The right axis is Photon counts (in s)^-1) The Voltage (in V) is shown on the horizontal axis, the band gap Voltage of the green perovskite light emitting diode is 2.40V corresponding to the dotted line in the figure, and the device has the brightness below the band gap Voltage, and the brightness of the device corresponding to the band gap Voltage is 100cd m^-2Indicating that the device has photons radiating out of the device and can be detected by a luminance meter.

Fig. 8 is a graph showing the operating spectrum of the green perovskite light emitting diode device at a voltage higher than the band gap, and is an operating waveform graph at the voltage higher than the band gap, and it can be seen that the spectral shape of the voltage applied to two ends of the device is not changed when the voltage is changed, which indicates that the operating spectrum of the device is relatively stable.

Fig. 9 is a graph showing the operating spectrum of a green perovskite light emitting diode device at a voltage lower than the band gap, and is a graph showing the operating waveform at the voltage lower than the band gap, and it can be seen that the spectral shape of the voltage applied to the two ends of the device is not changed when the voltage is changed, and further, the operating mechanism of the device for generating fluorescence is the same below the band gap and above the band gap, by combining fig. 8 and fig. 9.

Fig. 10 is a graph showing the effect of the variation in the thickness of the transport layer on the device performance, where the turn-on voltage for different electron transport layers is reduced when a material with high electron mobility is used, while the turn-on voltage for the same electron transport layer is reduced when the thickness is reduced, which illustrates that the series resistance of the transport layer is partially reduced. In order to realize that the light-emitting diode radiates the most photons at the sub-band gap voltage, the charge transport layer of the device is required to have higher carrier mobility, ohmic contact is formed between the electrode and the charge transport layer as well as between the charge transport layer and the light-emitting layer as far as possible, so that the extremely low series resistance in the device is realized, the most effective carrier injection is finally formed on the light-emitting layer, the maximum quasi-Fermi energy level splitting on the light-emitting layer is formed, and the effective radiation recombination of the unbalanced electrons and the unbalanced holes in the light-emitting layer is realized to form electroluminescence.

FIG. 11 is a graph of Photon counts and Voltage of an LED measured by a high sensitivity photodetector, with Voltage volts on the horizontal axis and Photon counts on the vertical axis, and s on the horizontal axis^-1. The curves in the graph are photon number graphs of the near-infrared perovskite light emitting diode and the green perovskite light emitting diode respectively, and compared with a luminance meter with low sensitivity, the photon number graph can detect the photon number of the corresponding device under lower voltage, which shows that photons are radiated out of the device at lower voltage.

Preparation process of polymer light-emitting diode device

Preparation method of polymer light-emitting diode

The polymer light emitting diode is prepared on the ITO conductive glass, and the ITO conductive glass cleaning method is as described above. And transferring the ITO conductive glass into a fume hood, putting the ITO conductive glass on a vacuum spin coater for spin coating of a charge transport material, wherein the name of the charge transport material is PEDOT: PSS. The concentration is 30mg/ml, 60uL of charge transfer solution is absorbed by a liquid transfer gun with the dosage of 100uL and coated on the ITO conductive glass, a vacuum spin coating machine is started to spin at the rotating speed of 7000 rpm/s for 60 s, the ITO conductive glass of the charge transfer material after spin coating is placed on a hot table to be annealed at the temperature of 150 ℃ for 10 min, and the smooth PEDOT: PSS film.

And then transferring the ITO conductive glass covered with the charge transport material to a glove box filled with high-purity nitrogen for spin-coating an F8BT solution, wherein the concentration of the F8BT solution is 14mg/ml, sucking 60uL of the F8BT solution by using a pipette gun with the dosage of 100uL to coat the ITO conductive glass, starting a vacuum spin-coating machine for spin-coating for 60 s at 5000 rpm/s, and placing the ITO conductive glass subjected to spin-coating to F8BT on a hot table for annealing at 160 ℃ for 10 min.

Finally transferring the glass to a vacuum coating machine for evaporating an electrode material Ca/Al, wherein the evaporation rate is measured by a quartz crystal oscillation piece, and the light-emitting size can be limited to 5.25mm by a mask²The thickness of Ca is 3.5nm, and the thickness of Al vapor deposition is 100 nm.

Characterization of Polymer light emitting diodes

FIG. 12 shows the Luminance-photon count-voltage curve of a polymer F8BT LED, wherein the left axis represents Luminance luminence (in cd m)^-2) The right axis is Photon counts (in s)^-1) The Voltage (in V) on the horizontal axis and the band gap Voltage 2.30V corresponding to the polymer F8BT LED on the dotted line in the figure show that the device has a luminance below the band gap Voltage and a luminance of 0.2cd m corresponding to the band gap Voltage^-2Indicating that the device has photons radiating out of the device and can be detected by a luminance meter.

Fig. 13 is a graph showing the operating spectrum of the polymer F8BT light emitting diode device at a voltage below the band gap, and is a graph showing the operating waveform at a voltage below the band gap, and it can be seen that the spectral shape of the voltage applied across the device does not change when the voltage changes, further showing that the operating mechanism of the device for generating fluorescence is the same below and above the band gap.

Preparation process of small-molecule light-emitting diode device

Preparation method of micromolecule light-emitting diode

The small molecule light emitting diode is prepared on ITO conductive glass, and the ITO conductive glass cleaning method is as described above. And transferring the ITO conductive glass into a fume hood, putting the ITO conductive glass on a vacuum spin coater for spin coating of a charge transport material, wherein the name of the charge transport material is PEDOT: PSS. The concentration is 30mg/ml, 60uL of charge transfer solution is absorbed by a liquid transfer gun with the dosage of 100uL and coated on the ITO conductive glass, a vacuum spin coating machine is started to spin at the rotating speed of 7000 rpm/s for 60 s, the ITO conductive glass of the charge transfer material after spin coating is placed on a hot table to be annealed at the temperature of 150 ℃ for 10 min, and the smooth PEDOT: PSS film.

Then transferring the ITO conductive glass covered with the charge transport material to a vacuum coating machine for evaporating micromolecule Rubrene, C60, BCP and metal electrode Ag, wherein the thicknesses of the micromolecule Rubrene, the C60, the BCP and the metal electrode Ag are respectively 35nm, 25nm, 6nm and 120nm, the evaporation rate is measured by a quartz crystal oscillator plate, and the light-emitting size can be limited to be 5.25mm through a mask plate²。

Characterization of small molecule LED

FIG. 14 is a graph of Luminance-photon number-voltage curve of a small molecular Rubrene LED, where the left axis is Luminance Luminince (in cd m)^-2) The right axis is Photon counts (in s)^-1) The Voltage (in V) is shown on the horizontal axis, the band gap Voltage of the corresponding small molecule Rubrene light emitting diode is 2.20V on the dotted line, the device has brightness below the band gap Voltage, and the brightness corresponding to the band gap Voltage is 10cd m^-2Indicating that the device has photons radiating out of the device and can be detected by a luminance meter.

Fig. 15 is a graph of the operating spectrum of the small molecule Rubrene light emitting diode device at a voltage lower than the band gap, and is a graph of the operating waveform at the voltage lower than the band gap, and it can be seen that the spectral shape of the voltage applied to the two ends of the device is not changed when the voltage is changed, further indicating that the operating mechanism of the device for generating fluorescence is the same below the band gap and above the band gap.

FIG. 16 is a graph of Photon counts and Voltage of an LED measured by a high sensitivity photodetector, with Voltage on the horizontal axis in V and Photon on the vertical axiscounts in units of s^-1. The graphs of the photon numbers of the macromolecular polymer F8BT light-emitting diode and the micromolecular Rubrene light-emitting diode respectively in the figure can detect the photon numbers of corresponding devices under lower voltage compared with the curves under the low-sensitivity luminance meter, which indicates that the devices have photons radiated out of the devices under lower voltage.

Preparation process of II-VI group quantum dot light-emitting diode device

Preparation method of II-VI family quantum dot light-emitting diode

The II-VI group quantum dot light-emitting diode is prepared on ITO conductive glass, and the ITO conductive glass cleaning method is as described above. And transferring the ITO conductive glass into a fume hood, putting the ITO conductive glass on a vacuum spin coater for spin coating of a charge transport material, wherein the name of the charge transport material is PEDOT: PSS. The concentration is 30mg/ml, 60uL of charge transfer solution is absorbed by a liquid transfer gun with the dosage of 100uL and coated on the ITO conductive glass, a vacuum spin coating machine is started to spin at the rotating speed of 7000 rpm/s for 60 s, the ITO conductive glass of the charge transfer material after spin coating is placed on a hot table to be annealed at the temperature of 150 ℃ for 10 min, and the smooth PEDOT: PSS film.

And then transferring the ITO conductive glass covered with the charge transport material to a glove box filled with high-purity nitrogen, coating a hole transport layer material TFB, dissolving the hole transport layer material TFB in chlorobenzene (CB for short) with the concentration of 12mg/ml, absorbing 30uL of charge transport layer solution by using 100uL of dosage process, coating the charge transport layer solution on the ITO conductive glass with perovskite, starting a button of a vacuum spin coater, spin-coating for 60 s at the rotating speed of 2000 rpm/s, and placing the ITO conductive glass on a hot bench for annealing at 160 ℃ for 10 min.

And spin-coating a II-VI group quantum dot solution, wherein the solution is a CdSe/ZnS quantum dot solution with the concentration of 15mg/ml, absorbing 60uL of the CdSe/ZnS solution by using a liquid-transferring gun with the dosage of 100uL, coating the CdSe/ZnS solution on the ITO conductive glass of the TFB, starting a vacuum spin-coating machine to spin at 2000 rpm/s for 60 s, and placing the ITO conductive glass of the CdSe/ZnS after spin-coating on a hot table to perform 120 ℃ annealing for 10 min. Next, ZnO solution was spin-coated at a concentration of 30mg/ml, and a vacuum spin-coater was turned on to spin at 2000 rpm/s for 60 seconds.

Finally transferring the glass to a vacuum coating machine for evaporation platingThe electrode material Ag, the evaporation rate is measured by a quartz crystal oscillator plate, and the light-emitting size can be limited to 5.25mm by a mask plate²The thickness of the metal Ag vapor deposition is 100 nm.

Characterization of II-VI family quantum dot light-emitting diodes

FIG. 17 is a graph of Luminance vs. photon count vs. voltage for a group II-VI QD LED, where the left axis is Luminance Luminince (in cd m)^-2) The right axis is Photon counts (in s)^-1) The Voltage (unit is V) is shown on the horizontal axis, the band gap Voltage of the corresponding II-VI group quantum dot light-emitting diode is 1.96V in the dotted line, the device has the brightness below the band gap Voltage, and the brightness corresponding to the band gap Voltage is 100cd m^-2Indicating that the device has photons radiating out of the device and can be detected by a luminance meter.

Fig. 18 is a graph showing the operating spectrum of the II-VI quantum dot light emitting diode device at a voltage below the band gap, and is a graph showing the operating waveform at a voltage below the band gap, and it can be seen that the spectral shape of the voltage applied across the device does not change when the voltage changes, further showing that the operating mechanism of the device for generating fluorescence is the same below the band gap and above the band gap.

FIG. 19 is a graph of Photon counts and Voltage of an LED measured by a high sensitivity photodetector, with Voltage volts on the horizontal axis and Photon counts on the vertical axis, and s on the horizontal axis^-1. The figure is a graph of the number of photons of a II-VI group quantum dot light-emitting diode, and compared with a curve under a low-sensitivity luminance meter, the number of photons of a corresponding device under lower voltage can be detected, which indicates that the device already radiates photons out of the device under lower voltage.

6. III-V inorganic light emitting diode device

FIG. 20 is a graph of Luminance vs. photon count vs. voltage for a group III-V inorganic light emitting diode, where the left axis is Luminance Luminince (in cd m)^-2) The right axis is Photon counts (in s)^-1) The Voltage (in V) is shown on the horizontal axis, and the band gap Voltage of the inorganic light emitting diode is 1.95V on the dotted line in the figure, so that the device can be seenThe luminance is already 10000cd m below the band gap voltage^-2Indicating that many photons of the device radiate out of the device while being detectable by the luminance meter.

FIG. 21 is a graph of Photon counts and Voltage of an LED measured by a high sensitivity photodetector, with Voltage volts on the horizontal axis and Photon counts on the vertical axis, and s on the horizontal axis^-1. The graph shows the photon count for an inorganic light emitting diode, which is capable of detecting the photon count for the corresponding device at a lower voltage than the low sensitivity luminance curve, indicating that the device has photons emitted from the device at a lower voltage.

The light emitting diode combining the above series of different material systems shows that the phenomenon that photons can be radiated below the band gap is not a special phenomenon of a certain system device, and the device operation with voltage below the band gap can be realized.

Working principle of light-emitting diode

Operating principle of light-emitting diode in prior art

In accordance with one aspect of the present invention, the principle of operation of light emitting diode devices, which is recognized by many researchers, is described. FIG. 22 shows the operation of an inorganic light emitting diode, Pow _1 is the power supply, B _1 is the P-type semiconductor band gap, E_fPhi 1 is the Fermi energy level in the P-type semiconductor, Photon 1 is the Photon emitted by radiation recombination,hvin order to radiate Photon energy of recombination, V _1 is a P-type semiconductor valence band hole, V _ T _1 is a hole injection process, H _1 is a hole near a luminescent recombination center, Photon _ recom _1 is a luminescent recombination center, E _1 is an electron near the luminescent recombination center, C _ T _1 is an electron injection process, and C _1 is an N-type semiconductor conduction band electron.

After forward voltage is applied to two ends of the inorganic semiconductor light-emitting diode, when the inorganic semiconductor light-emitting diode reaches an equilibrium state, because the electrodes are in ohmic contact, no potential difference exists between the anode of the light-emitting diode and the anode of a power supply and between the cathode of the light-emitting diode and the cathode of the power supply, but the potential difference of the anode and the cathode can enable energy bands at two ends of a PN junction to incline. Electron hole injected from the electrodeThe directional movement occurs, wherein a large number of holes exist at the position of the valence band V _1 of the P-type semiconductor, and the holes need to pass through the potential barrier through the V _ T _1 process to reach the vicinity of the light-emitting recombination center Photon _ recom _1 and become H _ 1. The N-type semiconductor conduction band C _1 position stores a large amount of electrons, the electrons need to cross a potential barrier through the C _ T _1 process and reach the vicinity of a luminescence recombination center Photon _ recom _1 to be changed into E _1, electron-hole pairs crossing the potential barrier equivalently fall into a potential well, the wave function overlapping increase of electrons and holes in the well is more favorable for radiative recombination, and finally, energy generated in the luminescence recombination center ishvPhoton _1, the electrode has continuous electron and hole injection to maintain balance.

For an ideal defect-free semiconductor, every electron-hole pair injected by the electrode can theoretically produce radiative recombination without loss, but the semiconductor cannot be perfectly defect-free, and defects and traps of electrons or holes exist in the semiconductor at the same time. On one hand, electrons or holes can generate non-radiative recombination in the defect center to lose energy, and on the other hand, the electrons and the holes can be captured by corresponding traps to reduce the carrier concentration, so that the radiative recombination rate is influenced, and the series resistance of the device is increased. When the electrode is injected with low current density, the charge carrier concentration is lower, the non-radiative recombination ratio is higher, and the electro-optic efficiency of the device is low; when the electrode is injected with large current density, the carrier concentration is obviously increased, the proportion of radiative recombination is increased, the proportion of non-radiative recombination is reduced, and the electro-optic efficiency of the device is increased. Therefore, by improving the carrier injection at low voltage and reducing the defect state density in the semiconductor, the proportion of non-radiative recombination can be reduced, so that the proportion of radiative recombination is improved, and the high luminous efficiency of the device at low voltage is realized.

Second, the working principle of the light emitting diode in the invention

By analyzing the manufacturing process of the sub-bandgap device and the photodetector system, the possible operation principle of the device will be described next, in which the potential barrier between the electrode of the light emitting diode and the charge transport layer is very small, and the potential barrier between the charge transport layer and the light emitting layer is very small, according to the operation mechanism inside the device under zero bias and with bias.

Fig. 23 is a schematic diagram of the operating principle of the light emitting diode at zero bias voltage, the left diagram is a schematic diagram of the energy band structure of each functional layer in the device, and the right diagram is a schematic diagram of the occupation probability of electrons and holes in the conduction band and the valence band in the light emitting layer, respectively. In the left figure, the internal structure distribution diagram of the device is divided into an anode, a p-type region, a light-emitting layer region, an n-type region and a cathode, when no bias voltage is applied to two ends of an electrode of the light-emitting diode, the Fermi level in the device is in a flush state, the p-type region is a hole multi-sub region, and a p-type organic or inorganic semiconductor material (sometimes a high-work-function n-type semiconductor material is used as a hole injection layer) is generally adopted; the n-type region is an electron multi-subregion, typically employing an n-type organic or inorganic semiconductor material. Under the thermal equilibrium condition, holes in the p-type region can reach the light-emitting layer as multi-photons through diffusion movement, electrons in the n-type region also enter the light-emitting layer through diffusion, with the continuous diffusion of majority carriers, space charge regions (or dipole layers) are formed on two sides of the light-emitting layer so as to form a built-in electric field applied to the light-emitting region, and drift current caused by the built-in electric field is opposite to diffusion current and is finally counteracted with the diffusion current to achieve thermal equilibrium. In the right diagram, CBM is the conduction band bottom of the luminescent layer material, VBM is the valence band top of the luminescent layer material, the horizontal axis is F (E) epsilon (0,1) to represent the energy distribution probability of the current carrier, and the vertical axis is energy, which indicates that electrons and holes still exist on the conduction band and the valence band of the device in the thermal steady state without external bias voltage. When the device is in a thermal steady state, electrons and holes in the luminescent layer are radiated and recombined to form photons into the environment, the recombination process has the same probability as the absorption of photons with the same energy distribution from the environment, so that actually radiated photons cannot be detected from the outside of the device.

Fig. 24 is a schematic diagram of the operation of the led at a non-zero forward bias voltage. The left diagram is a schematic diagram of the energy band structure of each functional layer in the device, and the right diagram is a schematic diagram of the occupation probability of electrons and holes in the conduction band and the valence band of the light-emitting layer, respectively, as with the composition of fig. 23. When a non-zero bias voltage is applied across the electrodes of the LED, quasi-Fermi level splitting (as shown in the left diagram of FIG. 11) occurs in the device to form an electron quasi-Fermi level and a hole quasi-Fermi level, which are respectively denoted asE _fn AndE _fp . Considering that the electrodes are in ohmic contact with the semiconductor material of the transmission layer, and the conductivity of the material of each transmission layer is high enough that the voltage drop in the neutral region is negligible during low current operation, in which case there is aE _fn -E _fp = V, where V is the applied drive voltage. It should be noted that although the magnitude of the quasi-fermi level cleavage is numerically equal to the applied bias, the quasi-fermi level cleavage essentially depends on the change of the carrier concentration in the light emitting region due to the effective carrier injection (as shown in the right diagram), and in the actual light emitting diode device, because the carrier injection efficiency is low, there is generally a low carrier injection efficiencyE _fn -E _fp <And V. It has been clarified in the description of fig. 23 that the light emitting diode is essentially a dynamic balance of diffusion current and drift current in the device under zero bias, when a non-zero positive bias is applied, the drift current driven by the built-in electric field will be weakened due to the direction of the applied electric field being opposite to that of the built-in electric field, holes diffused into the light emitting region from the p-type region and electrons diffused into the light emitting region from the n-type region will dominate, and the diffusion current will become an effective injection current, injecting non-equilibrium carriers into the light emitting region. Finally, the additional recombination process generated by the non-equilibrium carriers breaks the radiation-absorption equilibrium between the device and the external environment at zero bias, and effective photons which can be detected by the detector are formed, and the processes of electroluminescence are described in fig. 23 and 24.

In summary, when no voltage is applied to the two ends of the light emitting diode, the electrons and holes inside the light emitting diode reach dynamic thermal equilibrium, the light emitting diode and the environment are in the same thermal steady state system, and at this time, photons radiated to the environment and photons absorbed from the environment formed by the recombination of the electrons and holes inside the light emitting diode are equal in any unit time. Firstly, the working principle of the light emitting diode is explained, the current carriers (electrons and holes) in the light emitting diode obey fermi-dirac distribution, and the ambient heat also affects the dynamic balance of electron-hole pairs in the light emitting diode to generate recombination in a strict sense, but because the light emitting diode, the detector and the environment are in the same thermal steady state system, according to the microscopic particle fine balance theory, the detector cannot distinguish photons from the light emitting diode and the environment, and the light emitting diode is judged to have no fluorescence. After the forward voltage is loaded, the current carrier injection caused by the loaded voltage disturbs the thermal stable current carrier in the device, the current carrier in the light-emitting diode forms a new equilibrium state (non-thermal equilibrium state) by the addition of the non-equilibrium current carrier injection and recombination processes, the number of photons radiated by the device is larger than the number of photons absorbed from the environment, and the non-equilibrium current carrier forms the recombination of electron hole pairs to generate photons radiated out of the surface of the device, namely, electroluminescence is generated. When the device is loaded with very low forward bias voltage, the quantity of photons generated in the light emitting layer is very small, the ordinary photoelectric detector is difficult to detect, and the ordinary photoelectric detector can generate response after the quantity of photons generated by the device reaches a certain quantity.

Four, light emitting diode and photoelectric detector are integrated as ultrafast optical coupling system

FIG. 25 is a schematic diagram of an embodiment of an ultrashort electrical pulse driven light emitting diode, where 1 is a pulse generator, 2 is a prepared perovskite light emitting diode, 3 is a high-sensitivity photodetector, 4 is an oscilloscope, and the device size adopted in the embodiment is 5mm²The light emitting device of (1).

Fig. 26 is a device operating waveform diagram tested based on the operating schematic diagram scheme of fig. 25, the left diagram is a waveform diagram of the device operating under the condition of 1MHz, the right diagram is a single-pulse operating waveform diagram of 1MHz, the pulse signal generated by the pulse generator has a width of 18 ns, the amplitude of the electrical pulse signal is 1V, which is about 70% of the bandgap voltage, the optical signal detected by the high-sensitivity detector has a width of 15 ns, and after the signal output by the high-sensitivity detector is connected to an oscilloscope, the electrical pulse signal can be output, which indicates that the light emitting diode can still operate under very narrow electrical pulses and has photon signal output, and the overall power consumption of the device is very low, which is about hundred picojoules per bit, which indicates that the light emitting diode has the potential of realizing ultra-low power consumption when operating under ultra-low voltage.

Fig. 27 shows a strategy for increasing the operating speed of the light emitting diode, which is based on the fact that the high-sensitivity detector can detect a very weak signal, and through the above analysis, it indicates that even if the light emitting diode still operates under the sub-bandgap voltage, when the photodetector communicates with the light emitting diode, the communication speed can be increased and the power consumption can be reduced by reducing the loading voltage on the light emitting diode under the condition that the photodetector can respond. In the figure, the horizontal axis is time T, the vertical axis is Voltage amplitude Voltage, V1 is the amplitude required by signal communication, V2 is the lowest level of the signal which can be identified by the photodetector after the driving of the light emitting diode works, Per1 is the period of the normal working mode, Per2 is the period of the low level working mode, the time difference between T1 and T2 is a rising edge, the time difference between T4 and T5 is a falling edge, and when the highest level is changed, T2 and T3 are reduced time difference, so that the communication speed can be greatly improved.

FIG. 28 is a graph showing the behavior of devices implemented at different voltages. The horizontal axis is nanosecond (unit is ns), the left vertical axis is a trigger signal Normalized trigger, the right vertical axis is an output signal Normalized EL output, and after normalization, it can be seen that the change of the trigger pulse width of the low voltage and the high voltage is not obvious, but the relative change of the pulse width of the output signal is large, and the pulse width of the output signal is increased along with the increase of the trigger voltage, which indicates that the pulse width can be smaller during low-voltage driving, and also indicates that the working frequency can be higher. The principle that the working speed of the device can be improved by changing the driving pulse edge is as follows: the communication rate is limited when the light emitting diode is used for signal communication because the response time of the light emitting diode is in a certain relation with the amplitude of a level, the response time of the light emitting diode is the time delay for starting to emit light and extinguish after a forward current is added, the response speed of the light emitting diode is marked, and the response time mainly depends on the service life of a carrier, the junction capacitance of a device and the circuit impedance. For the light emitting diode with fixed materials, the switching speed can be improved by signal regulation, and the principle is described as follows: when a signal is transmitted, due to the requirement of signal amplitude, the low level is defaulted to be 10%, the high level is defaulted to be 90%, the time required for the signal to reach the high level from the low level is relatively long, and the same time is still required for the signal to be reduced from the high level to the low level. If the low-voltage driving is adopted, on the premise that the detector can detect signals, the time of rising edges and falling edges of the signals can be greatly reduced, the switching speed can be increased, and therefore the working frequency is increased.

FIG. 29 shows a scheme of an ultra-low power photo-coupled integrated device based on sub-bandgap voltage driven light emitting diode, for a device size of 5mm²The amplitude of the light emitting device is about 1V, and the current density is 10^-5mA/cm²The total power consumption is in the mu W level, and the work in an ultra-low power consumption system can be realized. The high-gain LED driving circuit comprises a signal input end, a signal amplitude of the Sin is a sub-photon voltage, VCC is a power supply, R2 and C1 form an RC filter circuit, D1 is a light emitting diode, R1 is a current-limiting resistor, D2 is a high-sensitivity photoelectric detector, T1 and T2 are high-gain transistors, R3, C2, R4 and C3 form a two-stage RC filter circuit, R3, C2 and R4 form a pi-type filter circuit, and Sout is signal output. The connection relationship of the components is as follows, pin 1 of the resistor R1 is connected with the signal input end Sin, pin 2 of the resistor R1 is connected with pin 1 of the LED D1, pin 2 of the LED D1 is connected with GND, pin 1 of the resistor R2 is connected with VCC, pin 2 of the resistor R2 is connected with pin 1 of the capacitor C1, pin 2 of the photodetector D2, pin 1 of the high-gain transistor T1 and pin 1 of the high-gain transistor T2, pin 2 of the capacitor C1 is connected with GND, pin 1 of the photodetector D2 is connected with pin 2 of the transistor T1, pin 3 of the transistor T1 is connected with pin 2 of the transistor T2, pin 3 of the transistor T2 is connected with pin 1 of the resistor R3, pin 2 of the resistor R3 is connected with pin 1 of the capacitor C2 and pin 1 of the capacitor R4, pin 2 of the resistor R4 is connected with pin 1 of the capacitor C3 and the signal output end Sout, and pin 2 of the capacitor C2 and pin 3 of the capacitor C3 is connected with GND.