阅读说明：本技术 一种用于深空探测器矩阵式火工品驱动电路及其控制方法 (Matrix type initiating explosive device driving circuit for deep space probe and control method thereof ) 是由 闫奎 孙奎 陈明花 朱新波 杨磊雨 于 2021-08-19 设计创作，主要内容包括：本发明提供了一种用于深空探测器矩阵式火工品驱动电路及其控制方法,包括第一继电器等,第一PMOS管漏极与第一电阻、第二电阻、第三电阻、第四电阻连接,第二PMOS管漏极与第五电阻、第六电阻、第七电阻、第八电阻连接,第三PMOS管漏极与第九电阻、第十电阻、第十一电阻、第十二电阻连接,第四PMOS管漏极与第十三电阻、第十四电阻、第十五电阻、第十六电阻连接,第二继电器与第一NMOS管、第二NMOS管、第三NMOS管和第四NMOS管的源极连接,本发明采用PMOS正线开关和NMOS负线开关的矩阵式控制,器件少、集成度高,适用于卫星对多数量、低成本、高集成度的火工品驱动要求。(The invention provides a matrix type initiating explosive device driving circuit for a deep space detector and a control method thereof, wherein the matrix type initiating explosive device driving circuit comprises a first relay and the like, the drain electrode of a first PMOS (P-channel metal oxide semiconductor) tube is connected with a first resistor, a second resistor, a third resistor and a fourth resistor, the drain electrode of a second PMOS tube is connected with a fifth resistor, a sixth resistor, a seventh resistor and an eighth resistor, the drain electrode of a third PMOS tube is connected with a ninth resistor, a tenth resistor, an eleventh resistor and a twelfth resistor, the drain electrode of a fourth PMOS tube is connected with a thirteenth resistor, a fourteenth resistor, a fifteenth resistor and a sixteenth resistor, and a second relay is connected with the source electrodes of a first NMOS tube, a second NMOS tube, a third NMOS tube and a fourth NMOS tube.)

1. A matrix type priming system driving circuit for a deep space probe is characterized by comprising a first relay K, a second relay K, a first PMOS (P-channel metal oxide semiconductor) tube P, a second PMOS tube P, a third PMOS tube P, a fourth PMOS tube P, a first NMOS (N-channel metal oxide semiconductor) tube N, a second NMOS tube N, a third NMOS tube N, a fourth NMOS tube N, a first resistor R, a second resistor R, a third resistor R, a fourth resistor R, a fifth resistor R, a sixth resistor R, a seventh resistor R, an eighth resistor R, a ninth resistor R, a tenth resistor R, an eleventh resistor R, a twelfth resistor R, a thirteenth resistor R, a fourteenth resistor R, a fifteenth resistor R and a sixteenth resistor R, wherein the first relay K is connected with a source electrode of the first PMOS tube P, a source electrode of the second PMOS tube P, a source electrode of the third PMOS tube P, a source electrode of the fourth PMOS tube P, a drain electrode of the first PMOS tube P, the second resistor R and the sixteenth resistor R, The third resistor R3 and the fourth resistor R4 are connected, the drain of the second PMOS tube P2 is connected with the fifth resistor R5, the sixth resistor R6, the seventh resistor R7 and the eighth resistor R8, the drain of the third PMOS tube P3 is connected with the ninth resistor R9, the tenth resistor R10, the eleventh resistor R11 and the twelfth resistor R12, and the drain of the fourth PMOS tube P4 is connected with the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15 and the sixteenth resistor R16.

2. The matrix type priming circuit for deep space probe of claim 1, wherein said second relay K2 is connected with a source electrode of a first NMOS transistor N1, a source electrode of a second NMOS transistor N2, a source electrode of a third NMOS transistor N3 and a source electrode of a fourth NMOS transistor N4.

3. The matrix type priming circuit for deep space probe of claim 1, wherein said first relay K1 and said second relay K2 are magnetic latching relays of the same type.

4. The matrix type priming circuit of claim 1, wherein said first P1, second P2, third P3 and fourth P4 PMOS transistors are P-type MOSFETs.

5. The matrix type priming circuit for deep space probe of claim 1, wherein said first NMOS transistor N1, second NMOS transistor N2, third NMOS transistor N3 and fourth NMOS transistor N4 are N type MOSFETs.

6. The matrix type priming circuit for deep space probe of claim 1, wherein said first resistor R1, said second resistor R2, said third resistor R3, said fourth resistor R4, said fifth resistor R5, said sixth resistor R6, said seventh resistor R7, said eighth resistor R8, said ninth resistor R9, said tenth resistor R10, said eleventh resistor R11, said twelfth resistor R12, said thirteenth resistor R13, said fourteenth resistor R14, said fifteenth resistor R15 and said sixteenth resistor R16 are special priming current limiting resistors of type TRY-A.

7. The matrix type priming circuit for deep space probe of claim 6, wherein said current limiting resistor is selected according to the voltage of the battery and the loop impedance of the priming circuit.

8. A control method for a deep space probe matrix type priming sytem driving circuit, which is characterized in that the method applies the matrix type priming sytem driving circuit for the deep space probe according to any one of claims 1 to 7, and the method comprises the following steps:

step S1: the first relay K1 is switched on or off, and the on-off control of the initiating explosive device positive bus main switch is realized; the second relay K2 is switched on or off, the on-off control of the initiating explosive device negative bus main switch firstly switches on the second relay K2 and then switches on the first relay K1;

step S2: a first NMOS transistor N1, a second NMOS transistor N2, a third NMOS transistor N3 and a fourth NMOS transistor N4 are used as a negative line power supply control switch of the initiating explosive device bridge wire, wherein the first NMOS transistor N1 provides a power supply negative line for the initiating explosive device bridge wire connected with the N1 when being switched on;

step S3: a first PMOS tube P1, a second PMOS tube P2, a third PMOS tube P3 and a fourth PMOS tube P4 are used as a positive line power supply control switch of an initiating explosive device bridge wire, wherein the first PMOS tube P1 provides a positive line power supply for the initiating explosive device bridge wire connected with the P1 when being switched on;

step S4: by the matrix combination of the negative wire control switch of the step S2 and the positive wire control switch of the step S3, 16 times of initiating explosive devices are initiated, 4 paths of initiating explosive device bridge wires are supplied with power each time, and 64 paths of initiating explosive device control are generated in total.

9. The control method of the matrix type initiating explosive device driving circuit for the deep space probe according to claim 8, wherein the step S4 adopts a combination of a first PMOS tube P1, a first NMOS tube N1, a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4 to form a group 1 group 4 initiating explosive device for detonation; the first PMOS tube P1, the second NMOS tube N1, the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are combined to form a group 2 4-path initiating explosive device.

10. The control method for the matrix type initiating explosive device driving circuit for the deep space probe according to claim 8, wherein 16 times of detonation control and 64 ways of initiating explosive device driving are completed by using 8 MOS tubes and 16 current limiting resistors; the design of double MOS tube series connection needs 32 MOS tubes and 64 current limiting resistors.

Technical Field

The invention relates to the technical field of deep space detectors, in particular to a matrix type initiating explosive device driving circuit for a deep space detector and a control method thereof.

Background

The initiating explosive device is an important component of a satellite platform and can be used for unfolding and unlocking important structures such as a solar sailboard, an antenna, a propulsion electric explosion valve and a combination body. The initiating explosive device driving circuit comprises two implementation modes, wherein one mode is that an electromagnetic relay is adopted to carry out single-end power supply on the initiating explosive device; one is to supply power to the initiating explosive device by connecting a PMOS tube and an NPOS tube in series, wherein the PMOS tube controls the positive end and the NMOS tube controls the negative end. The design scheme of the electromagnetic relay occupies large space, has medium mass and low integration level; the design mode of adopting double MOS tube series connection has high integration level, but the cost is relatively high. Because the deep space probe has different working environments and complex requirements, the initiating explosive devices of the deep space probe usually have the requirements of large quantity, high integration degree, light weight, low cost and the like, and the existing products are difficult to adapt to new application requirements. According to the defect, a matrix control idea is adopted, the number of devices is reduced, and the driving requirements of a satellite platform on a large number of initiating explosive devices with low cost and high integration level are met.

Patent document CN107958802A discloses a VMOS driving circuit of a satellite-borne initiating explosive device and a control method thereof, wherein the circuit includes a first relay and the like, the first relay is connected to a drain electrode of a first triode, a first resistor is connected in series with a second resistor, the first resistor and the second resistor are both connected to a gate electrode of the first triode, a sixth resistor is connected in series with a seventh resistor, the sixth resistor, the eighth resistor, the ninth resistor, the tenth resistor and the eleventh resistor are all connected to a source electrode of the first triode, the first resistor, the twelfth resistor and the thirteenth resistor are all connected to a second relay, the seventh resistor is connected to a drain electrode of the second triode, and a third relay is connected to a source electrode of the second triode.

The invention discloses a safety detonation circuit and a detonation method for an aircraft initiating explosive device in patent document with publication number CN104315932B, firstly, the power supply positive end of the initiating explosive device and the power supply positive end of a relay are forbidden to supply power, and the initiating explosive device circuit is placed in an initial safety state; the initiating explosive device power supply positive end supplies power, the power supply positive end of the electric appliance starts to supply power after a certain time interval, and the electric initiating explosive device power supply circuit enters a power-on safety state; connecting a takeoff signal of the aircraft to an open end of an electromagnetic coil, and enabling the initiating explosive device circuit to enter a primary unlocking state; the aircraft and rocket separation signal is connected into an electromagnetic coil, and the initiating explosive device circuit enters a secondary unlocking state; instantaneously applying an initiation instruction to the open end of the electromagnetic coil, and initiating explosive devices are initiated; and the power supply of the initiating explosive device power supply positive end and the relay power supply positive end is cut off, the takeoff signal of the aircraft and the separation signal of the aircraft and the rocket are cut off, and the initiating explosive device is in the initial safety state.

Patent document No. CN203660672U discloses an energy storage type drive circuit for a insensitive initiating explosive device, which outputs a large pulse current by energy storage and is used to detonate the insensitive initiating explosive device; wherein, farad capacitor is used as energy storage element. Wherein, a plurality of farad capacitors are connected in series and in parallel to form a farad capacitor network. The farad capacitor network consists of M multiplied by N capacitors, wherein each M capacitor is connected in parallel into one row, and the N rows are connected in series in total.

In view of the above-mentioned related technologies, the inventor considers that the integration level of the initiating explosive device driving circuit in the above-mentioned scheme is low, and therefore, a technical scheme needs to be provided to improve the above technical problem.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide a matrix type initiating explosive device driving circuit for a deep space probe and a control method thereof.

The matrix type priming system driving circuit for the deep space probe comprises a first relay K, a second relay K, a first PMOS (P-channel metal oxide semiconductor) tube P, a second PMOS tube P, a third PMOS tube P, a fourth PMOS tube P, a first NMOS (N-channel metal oxide semiconductor) tube N, a second NMOS tube N, a third NMOS tube N, a fourth NMOS tube N, a first resistor R, a second resistor R, a third resistor R, a fourth resistor R, a fifth resistor R, a sixth resistor R, a seventh resistor R, an eighth resistor R, a ninth resistor R, a tenth resistor R, an eleventh resistor R, a twelfth resistor R, a thirteenth resistor R, a fourteenth resistor R, a fifteenth resistor R and a sixteenth resistor R, wherein the first relay K is connected with a source electrode of the first PMOS tube P, a source electrode of the second PMOS tube P, a source electrode of the third PMOS tube P, a source electrode of the fourth PMOS tube P, a drain electrode of the first PMOS tube P, the second resistor R and the sixteenth resistor R, The third resistor R3 and the fourth resistor R4 are connected, the drain of the second PMOS tube P2 is connected with the fifth resistor R5, the sixth resistor R6, the seventh resistor R7 and the eighth resistor R8, the drain of the third PMOS tube P3 is connected with the ninth resistor R9, the tenth resistor R10, the eleventh resistor R11 and the twelfth resistor R12, and the drain of the fourth PMOS tube P4 is connected with the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15 and the sixteenth resistor R16.

Preferably, the second relay K2 is connected to the source of the first NMOS transistor N1, the source of the second NMOS transistor N2, the source of the third NMOS transistor N3, and the source of the fourth NMOS transistor N4.

Preferably, the first relay K1 and the second relay K2 are magnetic latching relays with the same model.

Preferably, the first PMOS transistor P1, the second PMOS transistor P2, the third PMOS transistor P3 and the fourth PMOS transistor P4 are P-type MOSFETs.

Preferably, the first NMOS transistor N1, the second NMOS transistor N2, the third NMOS transistor N3, and the fourth NMOS transistor N4 are N-type MOSFETs.

Preferably, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, the tenth resistor R10, the eleventh resistor R11, the twelfth resistor R12, the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15, and the sixteenth resistor R16 are current-limiting resistors of the TRY-a type dedicated initiating explosive device.

Preferably, the resistance value of the current-limiting resistor is selected according to the voltage of the storage battery and the loop impedance of the initiating explosive device.

The invention also provides a control method for the matrix type initiating explosive device driving circuit for the deep space probe, which is applied to the matrix type initiating explosive device driving circuit for the deep space probe and comprises the following steps:

step S1: the first relay K1 is switched on or off, and the on-off control of the initiating explosive device positive bus main switch is realized; the second relay K2 is switched on or off, the on-off control of the initiating explosive device negative bus main switch firstly switches on the second relay K2 and then switches on the first relay K1;

step S2: a first NMOS transistor N1, a second NMOS transistor N2, a third NMOS transistor N3 and a fourth NMOS transistor N4 are used as a negative line power supply control switch of the initiating explosive device bridge wire, wherein the first NMOS transistor N1 provides a power supply negative line for the initiating explosive device bridge wire connected with the N1 when being switched on;

step S3: a first PMOS tube P1, a second PMOS tube P2, a third PMOS tube P3 and a fourth PMOS tube P4 are used as a positive line power supply control switch of an initiating explosive device bridge wire, wherein the first PMOS tube P1 provides a positive line power supply for the initiating explosive device bridge wire connected with the P1 when being switched on;

step S4: by the matrix combination of the negative wire control switch of the step S2 and the positive wire control switch of the step S3, 16 times of initiating explosive devices are initiated, 4 paths of initiating explosive device bridge wires are supplied with power each time, and 64 paths of initiating explosive device control are generated in total.

Preferably, in the step S4, a combination of a first PMOS transistor P1, a first NMOS transistor N1, a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4 is adopted to form a group 1 and 4-way initiating explosive device for initiating explosive; the first PMOS tube P1, the second NMOS tube N1, the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are combined to form a group 2 4-path initiating explosive device.

Preferably, 8 MOS tubes and 16 current limiting resistors are adopted to complete 16 times of detonation control and 64 ways of initiating explosive device driving; the design of double MOS tube series connection needs 32 MOS tubes and 64 current limiting resistors.

Compared with the prior art, the invention has the following beneficial effects:

1. the matrix type combination control method of a plurality of groups of PMOS positive line switches and a plurality of groups of NMOS negative line switches is adopted, so that the detonation control of a plurality of paths of initiating explosive devices is realized, the number of devices is small, and the integration level is high;

2. the invention is suitable for the driving requirements of the satellite platform on a large number of initiating explosive devices with low cost and high integration level.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic diagram of a matrix-type initiating explosive device driving circuit for a deep space probe according to the present invention.

Detailed Description

The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.

As shown in fig. 1, the present invention provides a matrix type priming sytem driving circuit for a deep space probe and a control method thereof, including a first relay K1, a second relay K2, a first PMOS transistor P1, a second PMOS transistor P2, a third PMOS transistor P3, a fourth PMOS transistor P4, a first NMOS transistor N1, a second NMOS transistor N2, a third NMOS transistor N3, a fourth NMOS transistor N4, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a sixteenth resistor R16, a first relay and a second PMOS transistor, a source resistor connected to the first PMOS transistor and the fourth PMOS transistor, and a source resistor connected to the source, The drain electrode of the second PMOS tube is connected with the fifth resistor, the sixth resistor, the seventh resistor and the eighth resistor, the drain electrode of the third PMOS tube is connected with the ninth resistor, the tenth resistor, the eleventh resistor and the twelfth resistor, the drain electrode of the fourth PMOS tube is connected with the thirteenth resistor, the fourteenth resistor, the fifteenth resistor and the sixteenth resistor, and the second relay is connected with the source electrode of the first NMOS tube, the source electrode of the second NMOS tube, the source electrode of the third NMOS tube and the source electrode of the fourth NMOS tube.

The first relay K1 and the second relay K2 are magnetic latching relays with the same model; the first PMOS tube P1, the second PMOS tube P2, the third PMOS tube P3 and the fourth PMOS tube P4 are P-type MOSFETs; the first NMOS transistor N1, the second NMOS transistor N2, the third NMOS transistor N3, and the fourth NMOS transistor N4 are N-type MOSFETs.

The first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7 and the eighth resistor R8 are connected, the ninth resistor R9, the tenth resistor R10, the eleventh resistor R11, the twelfth resistor R12, the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15 and the sixteenth resistor R16 are TRY-A type special initiating explosive device current-limiting resistors, and the resistance values of the current-limiting resistors are selected according to the voltage of the storage battery and the loop impedance of the initiating explosive device, so that the driving current of 5A-10A is ensured.

The invention also provides a control method of the matrix type initiating explosive device driving circuit for the deep space probe, which comprises the following steps:

step S1: the first relay K1 is switched on or off to realize the on-off control of the initiating explosive device positive bus main switch, the second relay K2 is switched on or off to realize the on-off control of the initiating explosive device negative bus main switch, the second relay K2 is switched on first, and then the first relay K1 is switched on.

Step S2: the first NMOS transistor N1, the second NMOS transistor N2, the third NMOS transistor N3 and the fourth NMOS transistor N4 are used as a negative line power supply control switch of the initiating explosive device bridge wire, wherein the first NMOS transistor N1 provides a power supply negative line for the initiating explosive device bridge wire connected with the N1 when being switched on.

Step S3: the first PMOS tube P1, the second PMOS tube P2, the third PMOS tube P3 and the fourth PMOS tube P4 are used as a positive line power supply control switch of the initiating explosive device bridge wire, wherein the first PMOS tube P1 provides a positive line power supply for the initiating explosive device bridge wire connected with the P1 when being switched on.

Step S4: and through the matrix combination of the negative line control switch in the step S2 and the positive line control switch in the step S3, 16 times of initiating explosive devices are detonated, 4 paths of initiating explosive device bridge wires can be supplied with power each time, and 64 paths of initiating explosive device control are realized in total. The detonation of the 1 st group of 4-path initiating explosive devices is realized by combining a first PMOS tube P1, a first NMOS tube N1, a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4; the detonation of a group 2 4-path initiating explosive device is realized by combining a first PMOS tube P1, a second NMOS tube N1, a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4; by analogy, the 5 th group of 4-path initiating explosive devices are detonated by combining a second PMOS tube P2, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8 and a first NMOS tube N1.

In the embodiment, 8 MOS tubes and 16 current limiting resistors are adopted to realize 16 times of detonation control and 64 ways of initiating explosive device driving. In the same technical index, the double MOS tube series connection design needs 32 MOS tubes and 64 current limiting resistors. Therefore, the more the number of the priming sytem paths is, the more obvious the design advantage is.

The matrix type combination control method of a plurality of groups of PMOS positive line switches and a plurality of groups of NMOS negative line switches is adopted, so that the detonation control of a plurality of paths of initiating explosive devices is realized, the number of devices is small, and the integration level is high; the method is suitable for the driving requirements of the satellite platform on a large number of initiating explosive devices with low cost and high integration level.

In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.

The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.