阅读说明：本技术 光传感器结构 (Optical sensor structure ) 是由 郑伟德 梁凯杰 蔡杰廷 陈柏智 林子钧 邱国铭 于 2020-12-14 设计创作，主要内容包括：本申请公开一种光传感器结构,包括基板、光感测组件、外周壁以及第一反射材料层。基板包含多个金属垫。光感测组件设置在基板上并且电性连接多个金属垫。外周壁设置在基板上,且外周壁与基板形成一容置空间。金属垫以及光感测组件位在容置空间。第一反射材料层设置在容置空间,且第一反射材料层围绕光感测组件。(The application discloses optical sensor structure, including base plate, light sensing subassembly, periphery wall and first reflecting material layer. The substrate includes a plurality of metal pads. The optical sensing component is arranged on the substrate and is electrically connected with the plurality of metal pads. The peripheral wall is arranged on the substrate, and the peripheral wall and the substrate form an accommodating space. The metal pad and the light sensing component are positioned in the accommodating space. The first reflecting material layer is arranged in the accommodating space and surrounds the optical sensing component.)

1. A light sensor structure, comprising:

a substrate including a plurality of metal pads;

the optical sensing assembly is arranged on the substrate and is electrically connected with the plurality of metal pads;

the peripheral wall is arranged on the substrate, an accommodating space is formed between the peripheral wall and the substrate, and the metal pad and the light sensing assembly are positioned in the accommodating space; and

and the first reflecting material layer is arranged in the accommodating space and surrounds the optical sensing assembly.

2. The photosensor structure of claim 1, wherein the photo-sensing element is a schottky diode or a photo-resistor.

3. The optical sensor structure according to claim 1, wherein the upper surface of said optical sensing element is coated with a thin film having a refractive index less than the refractive index of said optical sensing element.

4. The light sensor structure of claim 3, wherein the thin film is a silicone or fluoropolymer.

5. The light sensor structure of claim 1, wherein the first layer of reflective material is sloped upwardly toward the peripheral wall by the light sensing component.

6. The light sensor structure of claim 1, wherein the first layer of reflective material comprises a silicone or a fluoropolymer.

7. The light sensor structure of claim 1, wherein the first layer of reflective material comprises a doped material comprising one or more from the group of: polytetrafluoroethylene, perfluoroethylene propylene copolymers, perfluoroalkyl compounds, ethylene-tetrafluoroethylene copolymers, and zirconium dioxide.

8. The light sensor structure of claim 7, wherein the dopant material comprises 30 to 70 weight percent of the first reflective material layer.

9. The optical sensor structure of claim 1, wherein the optical sensing element is rotated along the surface of the substrate by a rotation angle.

10. The optical sensor structure according to claim 9, wherein the rotation angle is between 40 and 50 degrees.

11. The optical sensor structure of claim 1, further comprising a substrate layer disposed in the receiving space and surrounding the optical sensing element, wherein the substrate layer is disposed below the first reflective material layer.

12. The light sensor structure of claim 11, wherein the base layer is selected from the group consisting of: silica gel, fluoropolymers, polytetrafluoroethylene, perfluoroethylene propylene copolymers, perfluoroalkylates, ethylene-tetrafluoroethylene copolymers, and any combination of the foregoing.

13. The light sensor structure of claim 11, wherein the substrate layer has a contact surface with the first reflective material layer that is no higher than an upper surface of the light sensing component.

14. The optical sensor structure of claim 1, further comprising a lens assembly overlying the peripheral wall.

15. The light sensor structure of claim 14, wherein the lens assembly is coated with an anti-reflective layer.

16. The optical sensor structure of claim 1, further comprising a resistor electrically connected to the optical sensing element.

17. The light sensor structure of claim 16, wherein the first layer of reflective material covers the resistive component.

18. The light sensor structure of claim 16, wherein the resistive element is disposed on the substrate in parallel with the light sensing element.

19. The optical sensor structure of claim 16, wherein the resistive element is disposed on the substrate, and the optical sensing element is stacked on the resistive element, and the resistive element is connected in parallel with the optical sensing element.

Technical Field

The present disclosure relates to optical sensor structures, and particularly to an optical sensor structure with high performance.

Background

First, the light sensor is a sensing component that can sense light or other electromagnetic energy, and is used for a wide range of purposes. Generally, the commercially available ultraviolet sterilization apparatus detects Ultraviolet (UV) rays by using a UV light sensor. Since the intensity of the UV light determines the efficiency of sterilization, the sensed intensity of the UV light may alert the user whether the product needs to be replaced.

The main factors for evaluating the efficiency of the light sensor are the photocurrent (photo current) and the response time (time response). However, it is difficult for the current UV light sensor to compromise between both. That is, in terms of the performance of current photosensor structures, there may be sufficient photocurrent but too slow response time, or short response time but insufficient photocurrent.

Therefore, how to simultaneously consider both the photocurrent and the response time by improving the structural design to overcome the above-mentioned defects has become one of the important issues to be solved in this field.

Disclosure of Invention

The present application provides an optical sensor structure, which includes a substrate, an optical sensing device, a peripheral wall, and a first reflective material layer. The substrate includes a plurality of metal pads. The optical sensing component is arranged on the substrate and electrically connected with the plurality of metal pads. The peripheral wall is arranged on the substrate, the peripheral wall and the substrate form an accommodating space, and the metal pad and the light sensing assembly are positioned in the accommodating space. The first reflecting material layer is arranged in the accommodating space and surrounds the optical sensing component.

Optionally, the light sensing component is disposed on one of the plurality of metal pads.

Optionally, the photo sensing element is a schottky diode or a photo resistor.

Optionally, a layer of thin film is coated on the upper surface of the optical sensing component, and the thin film is silica gel or fluoropolymer.

Optionally, the refractive index of the film is less than the refractive index of the light sensing component.

Optionally, the first reflective material layer is inclined upwardly towards the peripheral wall by the light sensing component.

Optionally, the first reflective material layer is silica gel or fluoropolymer.

Optionally, the first reflective material layer includes a doping material, the doping material including one or more from the group of: polytetrafluoroethylene, perfluoroethylene propylene copolymers, perfluoroalkyl compounds, ethylene-tetrafluoroethylene copolymers, and zirconium dioxide.

Optionally, the doping material accounts for 30 to 70 weight percent of the first reflective material layer.

Optionally, the optical sensing element rotates along the surface of the substrate by a rotation angle.

Optionally, the rotation angle is between 40 and 50 degrees.

Optionally, the optical sensor structure further includes a substrate layer disposed in the accommodating space and surrounding the optical sensing element, and the substrate layer is disposed below the first reflective material layer.

Optionally, the substrate layer is selected from the group: silica gel, fluoropolymers, polytetrafluoroethylene, perfluoroethylene propylene copolymers, perfluoroalkyl compounds, ethylene-tetrafluoroethylene copolymers, and any combination of the foregoing.

Optionally, a contact surface of the base layer and the first reflective material layer is not higher than an upper surface of the photo sensing element.

Optionally, the optical sensor structure further comprises a lens assembly stacked on the peripheral wall.

Optionally, the lens component is a plano-convex lens, and a convex surface of the plano-convex lens faces the optical sensing component.

Optionally, the lens assembly is a convex-concave lens, and a convex surface of the convex-concave lens faces the optical sensing assembly.

Optionally, a surface of the lens assembly facing away from the optical sensing assembly is coated with an anti-reflection layer.

Optionally, the anti-reflection layer comprises tantalum pentoxide and silicon dioxide stacked on each other or hafnium dioxide and silicon dioxide stacked on each other.

Optionally, the optical sensor structure further comprises a resistor element electrically connected to the optical sensing element.

Optionally, the first layer of reflective material covers the resistive component.

Optionally, the resistive element is disposed on the substrate and is connected in parallel with the light sensing element.

Optionally, the resistance element is disposed on the substrate, and the optical sensing element is stacked on the resistance element, and the resistance element is connected in parallel with the optical sensing element.

One of them beneficial effect of this application lies in, the light sensor structure that this application provided, it can set up at the accommodation space through "first reflecting material layer to first reflecting material layer surrounds light sensing component"'s technical scheme, in order to promote the light quantity of incidenting to the light sensing component in the light sensor structure, and then increases the photocurrent that light sensing component produced.

For a better understanding of the nature and technical content of the present application, reference should be made to the following detailed description and accompanying drawings which are provided for purposes of illustration and description and are not intended to limit the present application.

Drawings

Fig. 1 is a schematic diagram of a structure of a light sensor according to a first embodiment of the present application.

Fig. 2 is a schematic diagram of a structure of a light sensor according to a second embodiment of the present application.

Fig. 3A is a schematic top view of a photosensor structure according to a first embodiment of the present application.

Fig. 3B is a schematic top view of a photosensor structure according to a third embodiment of the present application.

Fig. 4 is a schematic diagram of a photosensor structure according to a fourth embodiment of the present application.

Fig. 5 is a schematic diagram of a photosensor structure according to a fifth embodiment of the present application.

Fig. 6 is a schematic diagram of a photosensor structure according to a sixth embodiment of the present application.

Fig. 7 is a schematic diagram of a photosensor structure according to a seventh embodiment of the present application.

Detailed Description

The following is a description of the embodiments of the "optical sensor structure" disclosed in the present application with specific embodiments, and those skilled in the art can understand the advantages and effects of the present application from the disclosure of the present application. The present application is capable of other and different embodiments and its several details are capable of modifications and variations in various respects, all without departing from the present application. The drawings in the present application are for illustrative purposes only and are not intended to be drawn to scale. The following embodiments will further explain the related art of the present application in detail, but the disclosure is not intended to limit the scope of the present application.

It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used primarily to distinguish one element from another. In addition, the term "or" as used herein should be taken to include any one or combination of more of the associated listed items as the case may be.

First embodiment

First, referring to fig. 1, a first embodiment of the present application provides an optical sensor structure M, which mainly includes: the substrate 1, the optical sensing device 2, the peripheral wall 3 and the first reflective material layer 5.

The substrate 1 includes a plurality of metal pads 10, and the plurality of metal pads 10 are located on one side of the substrate 1 and electrically connected to the external electrode Z2 located on the other side of the plurality of metal pads 10 through the conductive via Z1. The substrate 1 may be, for example, a PCB board, but the present application is not limited thereto. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The plurality of metal pads 10 have different polarities, such as anodes or cathodes. For example, the photo sensor device 2 is disposed on one of the metal pads 10, that is, the photo sensor device 2 can be fixed on one of the metal pads 10 of the substrate 1 by conductive silver paste, and then the wires are connected to the anode metal pad 10 and the cathode metal pad 10 by a wire bonding process. The optical sensor structure M is a sensor that converts an optical signal into a telecommunication signal by using the optical sensing component 2. In the present application, the Photo sensing element 2 may be a Schottky diode (Schottky diode) or a Photo resistor (Photo resistor), but the present application is not limited thereto.

Referring to fig. 1, the peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4, and the plurality of metal pads 10 and the optical sensing device 2 are located in the accommodating space 4. The first reflective material layer 5 is also disposed in the accommodating space 4. It should be noted that, although the drawings shown in the present application are plan views, in practice, the light sensor structure M provided in the present application is a three-dimensional structure. Therefore, the first reflective material layer 5 actually surrounds the photo sensing element 2, and preferably, the upper surface 20 of the photo sensing element 2 is not covered by the first reflective material layer 5, but is completely exposed to the accommodating space 4, but in other embodiments not shown, the first reflective material layer 5 covers a part of the upper surface 20 of the photo sensing element 2, which all belong to the scope of the present application.

In addition, the optical sensor structure M of the present application further includes a lens assembly 7, and the lens assembly 7 is stacked on the peripheral wall 3. Deep ultraviolet light (Deep UV) is incident inside the light sensor structure M through the lens assembly 7 and is received by the light sensing assembly 2. It should be noted that, for the Deep ultraviolet light (Deep UV) with short wavelength, when the Deep ultraviolet light enters the interior of the photo sensor structure M from the external environment, the Deep ultraviolet light is mainly received by the upper surface 20 of the photo sensing element 2.

With reference to fig. 1, the first opposite material layer 5 is not only disposed around the optical sensing element 2, but also the first opposite material layer 5 is inclined upward from the optical sensing element 2 toward the outer peripheral wall 3. The substrate of the first reflective material layer 5 is, for example, silica gel (Silicone) or Fluoropolymer (Fluoropolymer). However, the present application is not limited to the above-mentioned examples. The first reflective material layer 5 surrounds the optical sensing element 2 to form a reflective structure (Reflection area Chip), when the external light L enters the accommodating space 4, other light L that cannot directly enter the optical sensing element 2 is reflected (as shown by an arrow in fig. 1) to the upper surface 20 of the optical sensing element 2 by the first reflective material layer 5 except for the light L that directly enters the upper surface 20 of the optical sensing element 2, so that the optical sensing element 2 receives the optical signal and converts the optical signal into a telecommunication signal. That is, the optical sensor structure M provided in the present application can increase the amount of light incident on the optical sensing element 2 by means of the reflection of the first reflective material layer 5, thereby increasing the generated photocurrent.

Further, the first reflective material layer 5 includes a doping material 50. For example, the doping material 50 is selected from one or more of the following groups: polytetrafluoroethylene (PTFE), perfluoroethylene propylene copolymer (FEP), Perfluoroalkylvinylether (PFA), Ethylene-tetrafluoroethylene copolymer (ETFE), and zirconium dioxide, however, the present application is not limited to the above-mentioned examples.

In the present application, the doping material 50 accounts for 30 to 50% by weight of the first reflective material layer 5. However, the weight percentage of the first reflective material layer 5 is different from the weight percentage of the different doping materials 50. Preferably, the doped material 50 accounts for 30 to 70 weight percent of the first reflective material layer 5.

Second embodiment

Referring to fig. 2, a difference between the second embodiment and the first embodiment is that the optical sensor structure M provided in the second embodiment of the present application further includes a substrate layer 6, and other component structures of the optical sensor structure M provided in the second embodiment are similar to those of the first embodiment, and are not repeated herein.

In light of the above, the optical sensor structure M includes the substrate 1, the optical sensing device 2, the peripheral wall 3, the first reflective material layer 5, the substrate layer 6 and the lens assembly 7. The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4. The lens unit 7 is stacked on the outer peripheral wall 3. The base layer 6 is disposed in the accommodating space 4 and surrounds the photo sensing device 2, and the base layer 6 is located below the first reflective material layer 5. In other words, the base layer 6 is located between the first reflective material layer 5 and the substrate 1. In addition, the contact surface S of the base layer 6 and the first reflective material layer 5 is not higher than the upper surface 20 of the photo sensing element 2.

The base layer 6 is located between the first reflective material layer 5 and the substrate 1. The substrate layer 6 is mainly used to support the first reflective material layer 5, so as to prevent the doped material 50 inside the first reflective material layer 5 from sinking when the first reflective material layer 5 is cured. The constituent material of the base layer 6 may be the same as that of the first reflective material layer 5, or may be different from that of the first reflective material layer 5. For example, the base layer 6 is selected from the group: silica gel (Silicone), Fluoropolymer (Fluoropolymer), Polytetrafluoroethylene (Polytetrafluoroethylene), perfluoroethylene propylene copolymer (Fluorinated Ethylene propylene), perfluoroalkyly (Polyfluoroalkoxy), Ethylene-tetrafluoroethylene copolymer (Ethylene-Tetra-Fluoro-Ethylene), and any combination of the foregoing. However, the present application is not limited to the above-mentioned examples.

Third embodiment

Referring to fig. 1, fig. 3A and fig. 3B, a difference between the third embodiment and the first embodiment is that the optical sensor structure M provided in the third embodiment of the present application has an optical sensing element 2 rotating a rotation angle θ along the surface of the substrate 1, and other element structures of the optical sensor structure M provided in the second embodiment are similar to those of the first embodiment, and are not repeated herein.

In light of the above, the optical sensor structure M includes the substrate 1, the optical sensing element 2, the peripheral wall 3 and the first reflective material layer 5. The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4.

In contrast, fig. 3A is a schematic top view of a photosensor structure according to a first embodiment, and fig. 3B is a schematic top view of a photosensor structure according to a third embodiment of the present application. As shown in fig. 3B, in the photo sensor structure M according to the third embodiment of the present application, the photo sensing element 2 rotates along the surface of the substrate 1 by a rotation angle θ. For example, an axis a is defined in the center of the substrate 1, and another axis B is defined in the middle of the photo sensing device 2, and the axis a and the axis B are separated by an included angle θ (i.e. a rotation angle θ). In the first embodiment, the axes a and B overlap each other, and the rotation angle θ is 0 degree, that is, the photo sensing device 2 is not rotated relative to the substrate 1. In the third embodiment, the included angle θ between the axis a and the axis B may be 40 to 50 degrees, that is, the photo sensing device 2 rotates 40 to 50 degrees relative to the substrate 1.

And in another preferred embodiment of the present application, the rotation angle theta may be 45 degrees. Compared to the photo sensing device 2 in the first embodiment not rotating with respect to the substrate 1, when the rotation angle θ of the photo sensing device 2 in the third embodiment is 45 degrees, the photo sensing device 2 in the third embodiment can further increase the received photocurrent by more than 2% compared to the photo sensing device 2 in the first embodiment.

Fourth embodiment

Referring to fig. 4, the fourth embodiment is different from the first embodiment in that the fourth embodiment of the present application provides a light sensor structure M with a different structure of a lens assembly 7. In the first embodiment, the lens assembly 7 of the optical sensor structure M is a plane mirror, but in the fourth embodiment, the lens assembly 7 of the optical sensor structure M is a plano-convex lens. Thus, one surface 71 of the lens assembly 7 is convex and the other surface 72 is flat. In the present embodiment, the surface 71 (convex) of the lens component 7 faces the optical sensing element 2, and the surface 72 (flat) faces away from the optical sensing element 2. Therefore, the lens assembly 7 can reduce the total reflection angle of the light incident into the photo sensing structure M, and can improve the light gathering effect, that is, increase the amount of light directly incident on the upper surface 21 of the photo sensing assembly 2, thereby improving the generated photocurrent.

In view of the above, the optical sensor structure M provided in the fourth embodiment of the present application includes a substrate 1, an optical sensing element 2, an outer peripheral wall 3, a first reflective material layer 5, and a lens element 7 (plano-convex lens). The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4. The lens unit 7 is stacked on the outer peripheral wall 3.

In addition, in the lens assembly 7, a surface 71 facing the optical sensing element 2 and a surface 72 facing away from the optical sensing element 2 are coated with an anti-reflection layer 8 respectively. The Anti-Reflection layer 8 may be an Anti-Reflection Coating (ARC). The anti-reflection film is a surface optical coating layer capable of increasing light transmittance by reducing reflection of light. In other words, the antireflection film reduces scattered light generated by the lens assembly 7. For example, the anti-reflective film may be formed by stacking a combination of tantalum pentoxide and silicon dioxide or a combination of hafnium dioxide and silicon dioxide.

When the external light enters the accommodating space 4 through the lens assembly 7, a part of the light is totally reflected and does not enter the accommodating space 4. Therefore, the anti-reflection layer 8 can reduce the total reflection of the light passing through the lens assembly 7, and increase the amount of light incident on the accommodating space 4 when passing through the lens assembly 7. In other words, the anti-reflection layer 8 can reduce the total reflection angle of the incident light from the outside. Once the portion of the external light incident on the accommodating space 4 when passing through the lens assembly 7 is increased, the internal photo sensing element 2 can generate more photocurrent.

Fifth embodiment

Referring to fig. 5, the fifth embodiment is different from the first and fourth embodiments in that the structure of the lens assembly 7 of the optical sensor structure M provided in the fifth embodiment of the present application is different. In the present embodiment, the lens assembly 7 is a convex-concave lens. Thus, one surface 71 of the lens assembly 7 is convex and the other surface 72 is concave. The convex-concave lens has a surface 71 (convex surface) facing the optical sensing element 2, a surface 72 (concave surface) facing away from the optical sensing element 2, and the surfaces 71 (convex surface) and 72 (concave surface) are coated with an anti-reflection layer 8 respectively.

When the external light enters the accommodating space 4 through the lens assembly 7, a part of the light is totally reflected and does not enter the accommodating space 4. Therefore, the convex-concave lens can reduce the total reflection of the external light when passing through the lens assembly 7, and increase the incidence of the external light to the accommodating space 4 when passing through the lens assembly 7. In other words, the convex-concave lens can reduce the total reflection angle of incident light from the outside. Once the portion of the external light incident on the accommodating space 4 when passing through the lens assembly 7 is increased, the internal photo sensing element 2 can generate more photocurrent.

The constituent material of the lens assembly 7 includes, for example, Quartz (Quartz), Fluoropolymer (Fluoropolymer), or Sapphire (Sapphire). The shape of the lens unit 7 can be a spherical lens (dome lens) or a Fresnel lens (Fresnel lens) in addition to the aforementioned plane mirror, plano-convex lens and convex-concave lens. In other words, the present application is not limited to the constituent materials and shapes of the lens assembly 7. The above-described example is only one possible embodiment and is not intended to limit the present disclosure.

For example, the optical sensor structure M of the fifth embodiment of the present application includes a substrate 1, an optical sensing element 2, a peripheral wall 3, a first reflective material layer 5, a base layer 6 and a lens component 7 (convex-concave lens). The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4. The lens unit 7 is stacked on the outer peripheral wall 3. The base layer 6 is disposed in the accommodating space 4 and surrounds the photo sensing device 2, and the base layer 6 is located below the first reflective material layer 5. In the lens assembly 7, the surface 71 facing the optical sensing element 2 and the surface 72 facing away from the optical sensing element 2 are coated with an anti-reflection layer 8.

In addition, a film 21 is coated on the upper surface 20 of the photo sensing element 2, and the film 21 is Silicone or Fluoropolymer (Fluoropolymer). It should be noted that the refractive index of the film 21 is smaller than that of the photo sensing element 2, and the refractive index of the film 21 is larger than that of air (n is 1). When light is incident on the upper surface 20 of the photo sensing device 2, the light first passes through the air and the film 21 in sequence, and then contacts the upper surface 20 of the photo sensing device 2. That is, the light rays have different refractive index gradients on the incident path to the upper surface 20 of the photo sensing element 2. Therefore, the total reflection of light can be reduced, the quantity of light incident on the upper surface 20 of the optical sensing component 2 is increased, and the generated photocurrent is further improved.

Sixth embodiment

Referring to fig. 6, the sixth embodiment is different from the first embodiment in that the optical sensor structure M provided in the sixth embodiment of the present application further includes a resistor element 9. The other component structures of the optical sensor structure M provided in the sixth embodiment are similar to those of the previous embodiments, and are not described herein again.

In light of the above, the optical sensor structure M according to the sixth embodiment of the present application includes the substrate 1, the optical sensing element 2, the peripheral wall 3, the first reflective material layer 5, the lens element 7, and the resistor element 9. The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4. The lens unit 7 is stacked on the outer peripheral wall 3. The resistor element 9 is disposed on the substrate 1 and electrically connected to the photo sensor element 2, and the first reflective material layer 5 covers the resistor element 9. It should be noted that the resistor 9 and the photo sensor 2 are connected in parallel to form a parallel resistor.

Seventh embodiment

Referring to fig. 7, the difference between the seventh embodiment and the sixth embodiment is that the photo sensing device 2 of the photo sensor structure M provided in the seventh embodiment of the present application is stacked on the resistor 9. The structure of other components of the optical sensor structure M provided in the seventh embodiment is similar to that of the previous embodiment, and is not described herein again.

In light of the above, the optical sensor structure M according to the seventh embodiment of the present application includes the substrate 1, the optical sensing element 2, the peripheral wall 3, the first reflective material layer 5, the lens element 7, and the resistor element 9. The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4. The lens unit 7 is stacked on the outer peripheral wall 3. The resistance component 9 is arranged on the substrate 1, and the optical sensing component 2 is overlapped on the resistance component 9. The resistance component 9 is electrically connected with the optical sensing component 2 and is connected with the optical sensing component 2 in parallel to form a parallel resistance. The first layer of reflective material 5 covers the resistive component 9.

In the sixth embodiment and the seventh embodiment, the resistance component 9 can reduce the reaction time of the photosensor structure M, particularly the rise time (Tr) in the reaction time. The reaction time is the sum of Tr (time rising) and Tf (time falling), where Tr represents the time required for the photocurrent generated by the photosensor structure M to rise from 10% to 90%, and Tf represents the time required for the photocurrent to fall from 90% to 10%. In the present embodiment, the rise time (Tr) can be shortened by adding the parallel resistor (resistor block 9), that is, the reaction speed of the entire photosensor structure M can be faster. In one of the preferred embodiments of the present application, the parallel resistance (resistor element 9) is in the range of 100K-10M ohm. As shown in table 1 below, table 1 shows the percentage (%) of the rise time Tr to which the parallel resistances of different sizes were added to the rise time Tr to which the parallel resistance was not added. From table 1, it can be seen that the ratio of the rise time (Tr) is reduced under different values of the parallel resistor (resistor element 9), and in one of the preferred embodiments of the present application, the parallel resistor (resistor element 9) is 1M ohm. When the parallel resistance is 1M ohm, the rise time (Tr) can be reduced by about 30%.

In addition, it should be noted that the above-mentioned embodiments are only used for illustrating different embodiments of the present application, and are not used for limiting the present application. Therefore, the component structures described in the embodiments can also be adjusted and matched.

For example, in another embodiment not shown in the drawings of the present application, the photo sensor structure M includes a substrate 1, a photo sensing element 2, a peripheral wall 3, a first reflective material layer 5, a base layer 6, a lens element 7 and a resistor element 9. The substrate 1 includes a plurality of metal pads 10. The photo sensor device 2 is disposed on the substrate 1 and electrically connected to the plurality of metal pads 10. The peripheral wall 3 is disposed on the substrate 1, and the peripheral wall 3 and the substrate 1 form an accommodating space 4. The metal pads 10 and the photo sensing device 2 are disposed in the accommodating space 4, and the first reflective material layer 5 is also disposed in the accommodating space 4. The first reflective material layer 5 surrounds the optical sensing device 2, and the upper surface 20 of the optical sensing device 2 is not covered by the first reflective material layer 5 but exposed out of the accommodating space 4. The lens unit 7 is stacked on the outer peripheral wall 3. The base layer 6 is disposed in the accommodating space 4 and surrounds the photo sensing device 2, and the base layer 6 is located below the first reflective material layer 5. The surface 72 of the lens assembly 7 facing away from the light sensing assembly 2 is coated with an anti-reflection layer 8. The upper surface 20 of the photo-sensing element 2 is coated with a film 21.

However, the above-mentioned examples are only one possible embodiment and are not intended to limit the present disclosure.

Advantageous effects of the embodiments

One of them beneficial effect of this application lies in, the light sensor structure M that this application provided, it can set up in the accommodation space through "first reflecting material layer to first reflecting material layer surrounds light sensing component"'s technical scheme, in order to promote the light quantity of incidenting to light sensing component 2 in the light sensor structure M, and then increases the photocurrent that light sensing component 2 produced.

Furthermore, the optical sensor structure M provided by the present application can further reduce the reaction time and increase the reaction speed of the optical sensor structure M by arranging the resistor component 9 and the optical sensing component 2 to be connected in parallel to form a parallel resistor.

The disclosure is only a preferred embodiment of the present application and is not intended to limit the scope of the claims of the present application, so that all technical equivalents and modifications made by the disclosure of the present application and the drawings are included in the scope of the claims of the present application.