阅读说明：本技术 一种显示屏膜层结构、移动终端及膜层结构的制造方法 (Display screen film layer structure, mobile terminal and manufacturing method of film layer structure ) 是由 程立技 赵允国 于 2021-08-12 设计创作，主要内容包括：本发明涉及显示屏膜层制作领域,具体是涉及一种显示屏膜层结构、移动终端及膜层结构的制造方法。膜层结构包括由颜色胶片和色阻材料构成的组合膜层以及由氮氧化硅层、有机封装层和氮化硅层构成的封装膜,组合膜层位于所述封装膜的内部。无论是将由颜色胶片和色阻材料构成的组合膜层设置在封装膜外侧还是内侧,都会导致由组合膜层和封装膜构成的膜层结构降低显示屏的出光范围。本发明将由颜色胶片和色阻材料构成的组合膜层设置在封装膜的内部,能够增大显示屏的膜层结构出光范围,增大出光范围就能降低膜层结构对亮度的衰减程度,从而提高了显示屏的亮度,进而减小因亮度变小而导致的色偏程度,最后提高用户对显示屏的体验感。(The invention relates to the field of manufacturing of display screen film layers, in particular to a display screen film layer structure, a mobile terminal and a manufacturing method of the film layer structure. The film layer structure comprises a combined film layer formed by a color film and a color resistance material and an encapsulation film formed by a silicon oxynitride layer, an organic encapsulation layer and a silicon nitride layer, wherein the combined film layer is positioned inside the encapsulation film. No matter the combined film layer composed of the color film and the color resistance material is arranged on the outer side or the inner side of the packaging film, the film layer structure composed of the combined film layer and the packaging film can reduce the light emitting range of the display screen. According to the invention, the combined film layer composed of the color film and the color resistance material is arranged inside the packaging film, so that the light emitting range of the film layer structure of the display screen can be enlarged, the attenuation degree of the film layer structure to the brightness can be reduced by enlarging the light emitting range, the brightness of the display screen is improved, the color cast degree caused by the reduced brightness is further reduced, and finally, the experience of a user on the display screen is improved.)

1. The utility model provides a display screen membrane layer structure, membrane layer structure includes the combination rete that constitutes and the packaging film who constitutes by silicon oxynitride layer, organic packaging layer and silicon nitride layer by the colour film and look hinder the material, its characterized in that: the combined film layer is positioned inside the packaging film.

2. The display screen film structure of claim 1, wherein the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are sequentially disposed from the inner side to the outer side of the film structure, the combined film layer is located between the silicon oxynitride layer and the organic encapsulation layer, and the inner side of the film structure is close to a light source inside the display screen.

3. The display screen film structure of claim 1, wherein the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are sequentially disposed from the inner side to the outer side of the film structure, the combined film layer is located between the organic encapsulation layer and the silicon nitride layer, and the inner side of the film structure is close to a light source inside the display screen.

4. The utility model provides a mobile terminal, includes display screen membranous layer structure, its characterized in that, display screen membranous layer structure includes the combination rete and the encapsulation membrane that comprises silicon oxynitride layer, organic encapsulated layer and silicon nitride layer that comprise by the colour film and look hinder the material, the combination rete is located the inside of encapsulation membrane.

5. A method of manufacturing a film layer structure, comprising:

manufacturing a silicon oxynitride layer in the packaging film;

manufacturing a combined film layer on the silicon oxynitride layer;

fabricating an organic encapsulation layer in the encapsulation film on the combined film layer;

and manufacturing a silicon nitride layer in the packaging film on the organic packaging layer.

6. The method for manufacturing a film structure according to claim 5, wherein the manufacturing of the silicon oxynitride layer in the encapsulation film comprises:

and forming the silicon oxynitride layer by adopting a plasma enhanced chemical vapor deposition method, wherein the deposition temperature of the plasma enhanced chemical vapor deposition method is 45-55 ℃.

7. The method of claim 5, wherein fabricating a composite layer on the silicon oxynitride layer comprises:

coating a color resistance material in the combined film layer on the silicon oxynitride layer to form a color resistance film;

a notch is formed in the color resistance film;

sequentially carrying out exposure, development and baking processes on the color resistance film after the notch is formed;

and coating the color film in the combined film layer at the notch on the color resistance film after the exposure, development and baking processes are carried out.

8. The method of claim 7, wherein the exposing, developing and baking processes are sequentially performed on the color resist film after the opening, and the method comprises:

and covering the color resistance film with a mask plate with a through hole, and then sequentially carrying out exposure, development and baking processes, wherein the through hole of the mask plate is aligned to the position of a non-notch on the color resistance film.

9. The method of claim 7, wherein the color film includes a red film, a green film and a blue film, and each of the notches of the color-resist film corresponds to one of the red film, the green film and the blue film.

10. The method for manufacturing a film structure according to claim 5, wherein the manufacturing of the organic encapsulation layer in the encapsulation film on the combined film layer comprises:

and manufacturing the organic packaging layer on the combined film layer by adopting an ink-jet printing process.

11. The method of claim 5, wherein the exposure time is 4 seconds to 6 seconds.

Technical Field

The invention relates to the field of manufacturing of display screen film layers, in particular to a display screen film layer structure, a mobile terminal and a manufacturing method of the film layer structure.

Background

At present, mobile phones are developed to be thinner and foldable, so the tendency of thinning and removing the polarizer is also becoming necessary. At present, the polarizer conventionally used in mobile phones is about 100um, and a technology (COE technology) for reducing the thickness of the polarizer is proposed in the industry, namely, a combined film layer formed by Color film and BM (Color resist) is used for replacing the polarizer. The COE technology is characterized in that a combined film layer of Color film and BM (Color resistor) is used for replacing the existing polarizer, the combined film layer is arranged between an encapsulation film and a touch layer in a film layer structure of the mobile phone in the implementation process, namely the combined film layer is arranged outside the encapsulation film, the thickness of the combined film layer is only 5um and is far smaller than that of the original polarizer, the COE technology well accords with the trend of lighter and thinner mobile phones, and the combined film layer is made of organic materials, so that the application of the COE technology in folding mobile phones can be greatly improved.

Although the mobile phone film structure manufactured by the COE technology has a good effect on thinning the mobile phone, the mobile phone film structure manufactured by the COE technology obstructs the light-emitting angle range of the light-emitting device in the mobile phone, and further the attenuation degree of the mobile phone film structure to the brightness generated by the light-emitting device is increased.

In summary, the conventional film structure obstructs the light-emitting angle range.

Thus, there is a need for improvements and enhancements in the art.

Disclosure of Invention

In order to solve the technical problems, the invention provides a display screen film layer structure, a mobile terminal and a manufacturing method of the film layer structure, and solves the problem that the existing film layer structure obstructs the light-emitting angle range.

In order to achieve the purpose, the invention adopts the following technical scheme:

in a first aspect, the present invention provides a film layer structure of a display screen, wherein the film layer structure includes a combined film layer composed of a color film and a color resistance material, and an encapsulation film composed of a silicon oxynitride layer, an organic encapsulation layer, and a silicon nitride layer, and the combined film layer is located inside the encapsulation film.

In one implementation, the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are sequentially arranged from the inner side to the outer side of the film layer structure, the combined film layer is located between the silicon oxynitride layer and the organic encapsulation layer, and the inner side of the film layer structure is close to the light source inside the display screen.

In one implementation, the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are sequentially arranged from the inner side to the outer side of the film layer structure, the combined film layer is located between the organic encapsulation layer and the silicon nitride layer, and the inner side of the film layer structure is close to the light source inside the display screen.

In a second aspect, an embodiment of the present invention further provides a mobile terminal, including a display screen film layer structure, where the display screen film layer structure includes a combined film layer composed of a color film and a color resistance material, and an encapsulation film composed of a silicon oxynitride layer, an organic encapsulation layer, and a silicon nitride layer, and the combined film layer is located inside the encapsulation film

In a third aspect, an embodiment of the present invention further provides a method for manufacturing a film layer structure, where the method includes:

manufacturing a silicon oxynitride layer in the packaging film;

manufacturing a combined film layer on the silicon oxynitride layer;

fabricating an organic encapsulation layer in the encapsulation film on the combined film layer;

and manufacturing a silicon nitride layer in the packaging film on the organic packaging layer.

In one implementation, the manufacturing of the silicon oxynitride layer in the encapsulation film includes:

and forming the silicon oxynitride layer by adopting a plasma enhanced chemical vapor deposition method, wherein the deposition temperature of the plasma enhanced chemical vapor deposition method is 45-55 ℃.

In one implementation, the fabricating a combined film layer on the silicon oxynitride layer includes:

coating a color resistance material in the combined film layer on the silicon oxynitride layer to form a color resistance film;

a notch is formed in the color resistance film;

sequentially carrying out exposure, development and baking processes on the color resistance film after the notch is formed;

and coating the color film in the combined film layer at the notch on the color resistance film after the exposure, development and baking processes are carried out.

In one implementation manner, the exposing, developing and baking processes of the color resist film after the notch is opened are sequentially performed, and the method includes:

and covering the color resistance film with a mask plate with a through hole, and then sequentially carrying out exposure, development and baking processes, wherein the through hole of the mask plate is aligned to the position of a non-notch on the color resistance film.

In one implementation, the color films include a red film, a green film, and a blue film, and each notch on the color resist film corresponds to one of the red film, the green film, and the blue film.

In one implementation, the fabricating, on the combined film layer, an organic encapsulation layer in the encapsulation film includes:

and manufacturing the organic packaging layer on the combined film layer by adopting an ink-jet printing process.

In one implementation, the exposure time is between 4 seconds and 6 seconds.

Has the advantages that: no matter the combined film layer formed by the color film and the color resistance material is arranged on the outer side or the inner side of the packaging film, the film layer structure formed by the combined film layer and the packaging film can reduce the light emitting range of the display screen, and the light emitting range is the visual angle range covered by light. According to the invention, the combined film layer composed of the color film and the color resistance material is arranged inside the packaging film, so that the light emitting range of the film layer structure of the display screen can be enlarged, the attenuation degree of the film layer structure to the brightness can be reduced by enlarging the light emitting range, the brightness of the display screen is improved, the color cast degree caused by the reduced brightness is further reduced, and finally, the experience of a user on the display screen is improved.

Drawings

FIG. 1 is a schematic view of a film structure of the present invention;

fig. 2 is a schematic diagram illustrating a comparison between the light-emitting angle of the film structure of the present invention and the light-emitting angle of the conventional film structure.

The notations in the figures have the following meanings:

1-substrate 2-array 3-flat layer 4-packaging film 41-silicon oxynitride layer 42-organic packaging layer 43-silicon nitride layer 5-color film 6-color resistance film 7-touch layer 8-adhesive glue layer

Detailed Description

The technical scheme of the invention is clearly and completely described below by combining the embodiment and the attached drawings of the specification. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Research shows that the mobile phone is developed to be thinner and foldable at present, so the thinning and removing trends of the polarizer become necessary. At present, the polarizer conventionally used in mobile phones is about 100um, and a technology (COE technology) for reducing the thickness of the polarizer is proposed in the industry, namely, a combined film layer formed by Color film 5 and BM (Color resist film 6) is used for replacing the polarizer. The COE technology is characterized in that a combined film layer of Color film 5 and BM 6 is used for replacing the existing polarizer, the combined film layer is arranged between an encapsulation film 4 and a touch layer 7 in a mobile phone film layer structure in the implementation process, namely the combined film layer is arranged outside the encapsulation film 4, the thickness of the combined film layer is only 5um which is far smaller than that of the original polarizer, the COE technology well accords with the trend of lighter and thinner mobile phones, and the combined film layer is made of organic materials, so that the application of the COE technology in folding mobile phones can be greatly improved. Although the mobile phone film structure manufactured by the COE technology has a good effect on lightening and thinning the mobile phone, the mobile phone film structure manufactured by the COE technology obstructs the light-emitting angle range of a light-emitting device in the mobile phone, and further the attenuation degree of the mobile phone film structure to the brightness generated by the light-emitting device is increased. The existing film structure obstructs the range of light-emitting angles.

In order to solve the technical problems, the invention provides a display screen film layer structure, a mobile terminal and a manufacturing method of the film layer structure, and solves the problem that the existing film layer structure obstructs the light-emitting angle range. In specific implementation, the film layer structure comprises a combined film layer and an encapsulation film 4, wherein the combined film layer is made of color films 5 and color resistance films 6, and the combined film layer is located inside the encapsulation film 4. No matter the combined film layer composed of the color film 5 and the color resistance film 6 is arranged on the outer side or the inner side of the packaging film 4, the light emitting range of the display screen is reduced by the film layer structure composed of the combined film layer and the packaging film 4, and the light emitting range is the visual angle range covered by light. According to the invention, the combined film layer composed of the color film 5 and the color resistance film 6 is arranged inside the packaging film 4, so that the light emitting range of the film layer structure of the display screen can be enlarged, the attenuation degree of the film layer structure to the brightness can be reduced by enlarging the light emitting range, the brightness of the display screen is improved, the color cast degree caused by the reduced brightness is reduced, and finally, the experience of a user to the display screen is improved.

Display screen film layer structure

The invention provides a display screen film layer structure, as shown in fig. 1, the film layer structure comprises a combined film layer composed of a color film 5 and a color resistance film 6 and an encapsulation film 4, and the combined film layer is positioned inside the encapsulation film 4. The film structure further comprises a substrate 1, an array 2 layer positioned on the substrate 1, a flat layer 3 positioned on the array 2 layer, a touch layer 7 positioned on the packaging film 4, and an adhesive material layer positioned on the touch layer 7. Wherein the Color film 5 is represented by Color film, the material of the Color resist film 6 is represented by BM, the encapsulation film 4 is represented by TFE, the substrate 1 is a PI substrate 1, the Array 2 layer is represented by Array, the flat layer 3 is represented by PDL, the Touch layer 7 is represented by Touch, and the adhesive layer is represented by OCA

The encapsulation film 4 includes a silicon oxynitride layer 41(SiON), an organic encapsulation layer 42(IJP), and a silicon nitride layer 43(SiN) sequentially disposed along the inner side to the outer side of the film structure, wherein the silicon oxynitride layer 41(SiON) is adjacent to the planarization layer 3, the silicon nitride layer 43(SiN) is adjacent to the touch layer 7, and the organic encapsulation layer 42(IJP) is located between the silicon oxynitride layer 41(SiON) and the silicon nitride layer 43 (SiN). The inner side to the outer side of the film layer structure are arranged along the thickness direction of the film layer structure.

The flat layer 3(PDL) is filled with color films 5, the color films 5 include red films (R), green films (G), and blue films (B), the red films (R), the green films (G), and the blue films (B) are sequentially disposed on the flat layer 3, and an interval is provided between adjacent films.

The color resist film 6 is also filled with a red film (R), a green film (G), and a blue film (B) in this order at positions corresponding to the flat layer 3.

The combined film layer of the present embodiment may be located between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42(IJP), or may be located between the organic encapsulation layer 42(IJP) and the silicon nitride layer 43 (SiN). When the combined film layer is located between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42(IJP), the light-emitting range corresponding to the film layer structure of the display panel is larger than that when the combined film layer is located between the organic encapsulation layer 42(IJP) and the silicon nitride layer 43(SiN), and the combined film layer is located between the organic encapsulation layer 42(IJP) and the silicon nitride layer 43(SiN) and is more convenient to manufacture than the combined film layer located between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42 (IJP).

To illustrate the wide light-emitting range of the combined film layer of the present embodiment located between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42(IJP), the following experiment was performed:

as shown in fig. 2, taking the light emitting device at the blue film (B) on the planarization layer 3(PDL) as an example, when the combined film layer is disposed on the outer side of the encapsulation film 4 composed of the silicon oxynitride layer 41(SiON), the organic encapsulation layer 42(IJP), and the silicon nitride layer 43(SiN), the angle corresponding to the light outgoing range is θ 1; when the combined film layer is disposed between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42(IJP) in the encapsulation film 4, the light-emitting range corresponds to an angle θ 2, and it can be seen that θ 2 is greater than θ 1. It can be demonstrated that placing the combined film layer between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42(IJP) in the encapsulation film 4 allows the RGB light emitting device to have a larger light emitting range, so that more light emitting is maintained at a larger viewing angle between the silicon oxynitride layer 41(SiON) and the organic encapsulation layer 42(IJP) in the encapsulation film 4 than when placing the combined film at other positions, thereby achieving a certain degree of improvement in luminance attenuation at a large viewing angle, and also reducing the influence of color shift.

The display screen film layer structure in the embodiment can be applied to a mobile terminal, and the mobile terminal can be a mobile phone or a tablet.

Manufacturing method of membrane layer structure

The invention provides a manufacturing method of a film layer structure. In this embodiment, the method for manufacturing the film layer structure specifically includes the following steps:

s100, an Array 2(Array) is fabricated on a substrate 1(PI) of a display panel.

S200, a thin film metal electrode material is vacuum-deposited on the Array 2(Array) to obtain a film 5 of three colors RGB, and a processed planarization layer 3(PDL) is obtained.

The RGB films represent a red (R) emitting device, a green (G) emitting device, and a blue (B) emitting device, respectively.

Firstly, a required opening shape is arranged on the flat layer 3, then a thin film metal electrode material is filled in the opening, and then vacuum evaporation is carried out, wherein the vacuum degree of the evaporation environment is 3Pa-8Pa, and the vacuum degree of the evaporation environment is controlled between 3Pa-8Pa, so that air doping in the manufactured RGB (red, green and blue) three-color film can be prevented, and the quality of the display screen is improved.

S300, the silicon oxynitride layer 41 in the encapsulation film 4 is fabricated on the planarization layer 3.

The silicon oxynitride layer 41 is formed by a plasma enhanced chemical vapor deposition method (PECVD process) having a deposition temperature of 45 to 55 ℃.

S400, fabricating a combined film layer on the silicon oxynitride layer 41.

The combined film layer (Color film) is composed of three Color films 5 of a red film (R), a green film (G) and a blue film (B) and a Color resistance film 6 (BM). The red film (R), the green film (G) and the blue film (B) convert the passing white light into three primary color light beams of red, green and blue (R, G, B for short), and the light beams are matched with other components such as a liquid crystal layer and the like to achieve the effect of displaying images with different colors.

Step S400 includes steps S401, S402, S403, S404:

s401, coating the color resist film 6 material in the combined film layer on the silicon oxynitride layer 41 to form the color resist film 6.

The color resist film 6 may be transparent silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide, or indium zinc oxide. The thickness of the color resist film 6 of this embodiment is 0.70 to 1.40 μm.

And S402, forming a notch on the color resistance film 6.

The present embodiment forms notches on the color resist film 6 by the etching process, and the positions of the notches of the present embodiment correspond to the red (R), green (G) and blue (B) devices on the planarization layer 3.

And S403, sequentially carrying out exposure, development and baking processes on the color resistance film 6 with the notch.

And covering a Mask plate (Mask) with a through hole on the color resistance film 6, and then sequentially carrying out exposure, development and baking processes, wherein the through hole of the Mask plate is aligned to the position of a non-gap on the color resistance film 6. For example, there are three portions without openings on the Mask (Mask), and these three portions are aligned with the notches on the color resist film 6, so as to cover the notches on the color resist film 6, and prevent the exposure, development and baking processes from affecting the exposed silicon oxynitride layer 41, and thus protecting the silicon oxynitride layer 41. Meanwhile, the three openings on the mask plate enable the parts of the color resistance film 6 which need to be subjected to the exposure, development and baking processes to be directly exposed, so that the processes of exposure, development and baking are conveniently carried out. In this example, pattern exposure was performed using an exposure machine, and a desired pattern was developed using NaOH.

S404, coating the color film 5 in the combined film layer at the gap on the color resist film 6 after performing the exposing, developing and baking processes.

The color films 5 comprise red films, green films and blue films, and each notch on the color resistance film 6 corresponds to one of the red films, the green films and the blue films.

A red film is applied at the notch aligned with the device of red film (R) on flat layer 3, a green film is applied at the notch aligned with the device of green film (G) on flat layer 3, and a blue film is applied at the notch aligned with the device of blue film (B) on flat layer 3. Wherein the red film is coated first, then the green film is coated, and finally the blue film is coated. Whether red film, green film or blue film is coated, the coating, exposure, development, baking and other processes are carried out. The specific processes of coating, exposing, developing and baking are as follows:

firstly, cleaning the silicon oxynitride layer 41 by using a cleaning solution, then manufacturing color-resisting films 6(BM) arranged at intervals on the transparent silicon oxynitride layer 41, and manufacturing the color-resisting films 6 (BM): uniformly and rotationally coating a black resin film on the surface of the silicon oxynitride layer 41 by using a spin coater, removing redundant black resin film by using vacuum drying and baking equipment, exposing and developing to form color resist films 6(BM) arranged at intervals, and finally removing residual developing solution and cleaning solution by using curing equipment to cure the color resist films 6(BM) on the silicon oxynitride layer 41; manufacturing reflective films, namely a red film (R), a green film (G) and a blue film (B), on the silicon oxynitride layer 41 without the color resist film 6(BM) and the color resist film 6(BM), wherein the reflective film on the silicon oxynitride layer 41 without the color resist film 6(BM) is provided with an opening which is connected with the silicon oxynitride layer 41, forming the reflective film on the silicon oxynitride layer 41 with the color resist film 6(BM) arranged at intervals by adopting a sputtering method, and then sequentially performing the working procedures of cleaning, coating a positive photoresist, baking, exposing and developing, etching and demoulding to manufacture the reflective film with the required pattern with the opening connected with the silicon oxynitride layer 41; then manufacturing a color filter film on the reflecting film with the opening: uniformly and rotatably coating a primary color negative photoresist on the silicon oxynitride layer 41 with the opening reflection film by using a spin coater, removing the residual solvent by using vacuum drying and baking equipment, carrying out exposure and development to form a primary color negative photoresist, removing the residual developing solution and cleaning solution by using curing equipment, curing the primary color negative photoresist on the transparent substrate 1, and repeatedly carrying out the operation for 3 times to respectively form R, G, B three primary color negative photoresists to prepare a color filter film; coating an insulating OC film on the color filter film: uniformly and rotationally coating acrylic resin film on the transparent substrate 1 for manufacturing the color resistance film 6(BM), the reflecting film and the color filter film by adopting a spin coater, and then forming an insulating OC film on the surface of the color filter film by adopting baking and curing equipment; sputtering an ITO conductive film on the surface of the insulating OC film: and sputtering an ITO conductive film on the surface of the insulating OC film by adopting vacuum sputtering equipment.

S401, S402, S403, and S404 in step S400 may be replaced with the following steps:

forming a Mask (Mask) containing a specific substance capable of emitting light passing through the color resist film 6(BM) after being excited on the silicon oxynitride layer 41; etching a Mask plate (Mask) to form a Mask pattern; coating a photoresist layer of a color resistance film 6 on the Mask graph; exciting the Mask pattern to emit light passing through the color resist film 6(BM) to align the exposure machine with the Mask pattern; exposing and developing the photoresist layer of the color resist film 6 by an exposure machine to form a BM pattern, and forming a Mask (Mask) containing a special substance on the silicon oxynitride layer 41 when the silicon oxynitride layer 41 is manufactured, wherein the special substance can emit light passing through the color resist film 6(BM) after being excited; etching a Mask plate (Mask) to form a Mask pattern; coating a photoresist layer of a color resistance film 6 on the Mask graph; exciting the Mask pattern to emit light passing through the color resist film 6(BM) to align the exposure machine with the Mask pattern; and exposing and developing the BM photoresist layer by an exposure machine to form a BM pattern. In the embodiment of the invention, as the substance doped with the forming material of the Mask graph can emit infrared rays which cannot be absorbed by the BM layer under the irradiation of light, the exposure machine can accurately finish Mask alignment according to the infrared rays emitted by the Mask graph so as to ensure that the subsequent etching of the BM graph can be accurately finished. Wherein, when a MARK layer containing a special substance is formed on the silicon oxynitride layer 41, the special substance capable of emitting light passing through the BM layer after being excited may be rare earth metal ion erbium, quantum dot nanoparticles, or the like. Wherein, according to the material difference of BM layer, the colour of the unable light that absorbs of BM layer also differs. For example, if the BM is formed by adding substances such as carbon black or titanium black and the like to acrylic resin serving as a base material, the visible light transmittance of the material is less than 1%, and infrared light with the wavelength within the range of 800-1600nm can be transmitted through the material.

S500, manufacturing an organic encapsulation layer 42 in the encapsulation film 4 on the combined film layer.

In this embodiment, the organic encapsulation layer 42 is also manufactured in a vacuum environment, and the vacuum degree of the vacuum environment in which the organic encapsulation layer 42 is manufactured is the same as the vacuum degree of the vacuum environment in which the silicon oxynitride layer 41 (inorganic layer) is manufactured, so that the characteristics of the contact surface of the organic layer and the inorganic layer are not consistent, and thus, ink on the surface of the inorganic layer is uniformly diffused during inkjet coating of the organic layer, the edge is neat, and the ink does not flow randomly, thereby improving the coating effect of the organic encapsulation layer 42, and finally improving the encapsulation quality of the whole encapsulation film 4.

In this embodiment, a buffer organic layer may be further fabricated between the mechanical package layer and the combined film layer, and the buffer organic layer is deposited by a PECVD method, where the buffer layer has a thickness range: 0.1 micron to 0.3 micron; the deposition time of the buffer organic layer is shorter than that of the organic encapsulation layer 42, so that the difference of the interface between the organic encapsulation layer 42 and the silicon oxynitride layer 41 (inorganic layer) is reduced; on the other hand, depositing a buffer organic layer on the surface of the silicon oxynitride layer 41 (inorganic layer) is more favorable for mask cleaning than depositing the organic encapsulation layer 42;

the buffer organic layer is deposited in a chemical vapor deposition PECVD mode; the deposition of the buffer organic layer and the silicon oxynitride layer 41 (inorganic layer) can be performed in the same process chamber, and one process flow is adopted, so that the transmission alignment time of the substrate 1 can be reduced, the process is continuous, no defect is generated in the middle interface, and a better film can be obtained. The material of the buffer organic layer is preferably plasma polymerized pp-hexamethyldisiloxane HMDSO; plasma (such as oxygen-containing plasma and fluorine-containing plasma) can be introduced to cure the buffer organic layer so as to realize accurate and timely control of the surface characteristics of the buffer organic layer; the treatment process can be finished in a PECVD chamber, and can also be carried out in a pretreatment chamber of the organic packaging layer 42 process; the organic encapsulation layer 42 and the buffer organic layer are considered to be processed at a time interval and the contact angle characteristic may vary with time. The curing of the buffered organic layer may be placed in the PECVD chamber if the time interval is short, depending on the production line equipment conditions; if the time interval is long, the curing of the buffered organic layer may be placed in a pre-process chamber of the organic encapsulation layer 42 to ensure good contact angle characteristics. In order to better control the phenomena of uneven ink edge, flowing and the like of the organic packaging layer 42, plasma curing with different concentrations can be carried out in different regions when the buffering organic layer is cured; for example, the concentration of the plasma introduced into the edge region of the buffer organic layer is lower than that introduced into the central region. Alternatively, different plasmas can be introduced into the buffer organic layer in a region during the curing of the buffer organic layer; for example, the curing of the buffer organic layer may be conducted with an oxygen-containing plasma in the center region and a fluorine-containing plasma in the edge region.

S600, fabricating the silicon nitride layer 43 in the encapsulation film 4 on the organic encapsulation layer 42.

The silicon nitride layer 43 is also an inorganic layer, and may adopt a PECVD manner to deposit silicon nitride SiNx, silicon dioxide SiO2, silicon oxynitride layer 41SiON, aluminum oxide AlOx, etc. to form an inorganic layer, in this embodiment, silicon nitride is adopted to form an inorganic layer, the silicon nitride layer 43 of this embodiment includes four layers of films, which are sequentially a uniform silicon nitride film, a non-uniform silicon nitride film, a uniform silicon nitride film, and a non-uniform silicon nitride film, that is, the uniform film and the non-uniform film of the silicon nitride layer 43 are arranged at intervals, the silicon nitride layer 43 is arranged in this embodiment, which makes up for the defects of poor uniformity and insufficient passivation of the gradual silicon nitride process coating, and simultaneously, the plurality of silicon nitride films can also reduce the absorption of the silicon nitride to the light emitted by the luminescent device inside the display screen, increase the photo-generated carriers, and further improve the service life and the use efficiency of the display screen. The process of forming the silicon nitride layer 43 is described in detail in the following steps one to six:

the method comprises the following steps: and pre-cleaning and depositing a first layer of uniform silicon nitride film, wherein ammonia gas is adopted to pre-clean the first layer of uniform silicon nitride film in the embodiment, and the cleaning time is 15 s. The deposition temperature is controlled at 400-440 ℃, and the deposition time is controlled at 110-115 s. The refractive index of the first layer of uniform silicon nitride film is controlled to be 2.26-2.29, and the thickness of the first layer of uniform silicon nitride film is controlled to be 10.5-11.5 nm.

Step two: depositing a first non-uniform silicon nitride film on the first uniform silicon nitride film in the first step, wherein the deposition temperature is controlled at 420-450 ℃, ammonia gas and silane are introduced into the process cavity while deposition is carried out, the deposition time is controlled within 10-60s, the refractive index of the first non-uniform silicon nitride film is reduced from 2.25-2.30 to 2.10-2.15 at a constant speed within the set deposition time, and the refractive index of the first non-uniform silicon nitride film is controlled within 3.5-4.5 nm.

Step three: depositing a second uniform silicon nitride film on the first non-uniform silicon nitride film in the second step; the deposition temperature is controlled at 430-480 ℃, ammonia and silane are introduced into the process cavity during deposition, and the deposition time is controlled at 300-450 s; the second layer of uniform silicon nitride film is controlled to be 2.05-2.08, and the thickness of the second layer of uniform silicon nitride film is controlled to be 50-55 nm.

Step four: depositing a second layer of non-uniform silicon nitride film on the second layer of uniform silicon nitride film in the third step; the deposition temperature is controlled at 430-480 ℃, ammonia gas and silane are simultaneously introduced into the process cavity within the set deposition time, the deposition time is controlled within 60-120s, the refractive index of the second non-uniform silicon nitride film is reduced from 2.05-2.08 to 1.9-2.0 at a constant speed within the set deposition time, and the thickness of the second non-uniform silicon nitride film is controlled within 10-15 nm.

Step five: and (3) ionizing ammonia gas in the process cavity, wherein the ionized ammonia gas can quickly enhance the hydrogen passivation of the surface of the silicon nitride film, and the ionization time is controlled to be 80-120 s.

Step six: and (5) heating and carrying out constant temperature treatment.

The temperature is raised to 500-550 ℃ at the maximum temperature raising rate, and under the temperature condition, nitrogen is used as protective gas, and the temperature is kept for 10-15 min.

S700, forming a touch layer 7 on the silicon nitride layer 43, and forming an adhesive layer 8 on the touch layer 7.

The touch layer 7 of the present embodiment is a flexible touch layer 7, the flexible touch layer 7 includes a flexible substrate, a touch electrode is disposed on a surface of the flexible substrate, the touch electrode includes a first electrode and a second electrode, and the first electrode and the second electrode are insulated from each other. The flexible touch layer 7 is adopted in this embodiment for the application of the flexible display screen. In this embodiment, the touch electrode is disposed on the surface of the flexible substrate, which is the layer of the flexible touch layer 7, so that the number of layers of the flexible substrate is reduced, and the thickness of the flexible touch layer 7 is reduced. And only need carry out laminating operation when utilizing flexible touch-control layer 7 to prepare touch-control display screen can, reduced the preparation process of preparing touch-control display screen, promoted the production efficiency of touch-control display screen to this has reduced the cost of generation.

In summary, no matter the combined film layer composed of the color film 5 and the color resist film 6 is disposed on the outer side or the inner side of the packaging film 4 (the inner side of the packaging film 4 is the side facing the inside of the display screen, that is, the side close to the light emitting device inside the display screen, on the contrary, the outer side of the packaging film 4 is the side facing the outside of the display screen, that is, the side far away from the light emitting device inside the display screen), the film layer structure composed of the combined film layer and the packaging film 4 reduces the light emitting range of the display screen, which is the viewing angle range covered by the light. According to the invention, the combined film layer composed of the color film 5 and the color resistance film 6 is arranged inside the packaging film 4, so that the light emitting range of the film layer structure of the display screen can be enlarged, the attenuation degree of the film layer structure to the brightness can be reduced by enlarging the light emitting range, the brightness of the display screen is improved, the color cast degree caused by the reduced brightness is reduced, and finally, the experience of a user to the display screen is improved.

The invention discloses a display screen film layer structure, a mobile terminal and a manufacturing method of the film layer structure, wherein the method comprises the following steps: manufacturing the silicon oxynitride layer 41 in the encapsulation film 4; fabricating a combined film layer on the silicon oxynitride layer 41; fabricating an organic encapsulation layer 42 in the encapsulation film 4 on the combined film layer; a silicon nitride layer 43 in the encapsulation film 4 is fabricated on the organic encapsulation layer 42. The combined film layer formed by the color film 5 and the color resistance film 6 is not arranged on the outer side of the packaging film 4 and on the inner side of the packaging film 4, but is just positioned on the inner side of the packaging film 4, because the combined film layer formed by the color film 5 and the color resistance film 6 effectively reduces the thickness of the display screen, but also reduces the light emitting range of the luminescent device in the display screen, the reduction of the light emitting range can increase the attenuation degree of the light emitted by the luminescent device, and finally the brightness of the display screen can not meet the use requirement approximately, so that the experience of users is reduced. The combined film layer is arranged inside the packaging film 4, so that the adverse effects caused by the combined film layer and the reduction of the thickness of the display screen can be avoided.

Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.