Method for producing textured solar wafers

文档序号:441036 发布日期:2021-12-24 浏览:25次 中文

阅读说明:本技术 用于生产纹理化太阳能晶片的方法 (Method for producing textured solar wafers ) 是由 V·布尔斯 A·维森 于 2020-05-11 设计创作,主要内容包括:本发明涉及用于生产至少在一侧上纹理化的太阳能晶片的方法,其中,在第一方法步骤中,提供具有锯切损伤的锯切太阳能晶片,并且在最后一个方法步骤结束时提供具有不同尺寸类型的大锥体和小锥体的纹理化太阳能晶片,并且其中,纹理化太阳能晶片可以随后进行进一步加工以生产太阳能电池。本发明解决的问题是在太阳能电池生产技术的框架内提供改进的纹理化方法。该问题通过生产纹理化太阳能晶片的方法来解决,其中,在第一纹理蚀刻步骤中,以低表面积密度产生大锥体,使得在该方法结束时,小于30%的太阳能晶片纹理化表面被大锥体占据;并且在第二纹理蚀刻步骤中,以大表面积密度产生小锥体。(The invention relates to a method for producing a solar wafer textured at least on one side, wherein in a first method step a sawn solar wafer with sawing damage is provided and at the end of the last method step a textured solar wafer with large and small pyramids of different size types is provided, and wherein the textured solar wafer can subsequently be further processed to produce a solar cell. The problem addressed by the present invention is to provide an improved texturing method within the framework of solar cell production technology. This problem is solved by a method for producing a textured solar wafer, wherein in a first texture etching step large pyramids are generated with a low surface area density, such that at the end of the method less than 30% of the textured surface of the solar wafer is occupied by large pyramids; and in a second texture etching step, small pyramids are created with a large surface area density.)

1. Method (1) for producing a textured solar wafer (10) at least on one side, wherein in a first method step (2) a sawed solar wafer with sawing damage is provided and at the end of a last method step (8) textured solar wafers with large (11) and small (12) cones of different size types are provided, wherein the height of the large cones (11) is greater than 4 μm and the height of the small cones is lower than 4 μm, and wherein the textured solar wafer (10) can subsequently be further processed into a solar cell,

characterized in that the method (1) comprises a first texture etching step (3) and a second texture etching step (7), wherein, in the first texture etching step (3), large pyramids (11) are generated with a low surface density such that, at the end of the method, less than 30% of the textured surface of the solar wafer (10) is occupied by large pyramids, and wherein, in the second texture etching step (7), small pyramids (12) are generated with a large surface density, wherein the large pyramids (11) and the small pyramids (12) occur with a statistical 2-fold or multiple distribution.

2. The method (1) according to claim 1, wherein the first texture etching step (3) immediately follows the first method step (2) of the second method steps.

3. The method (1) according to claim 1 or 2, wherein the first texture etching step (3) is performed with a first texture etching solution containing 1 to 15% KOH or NaOH or NH4OH or TMAH.

4. The method (1) according to claim 3, wherein the first texture etching solution contains a texture additive.

5. The method (1) according to at least one of the preceding claims, characterized in that the second texture etching step (7) is carried out with a second texture etching solution containing1% to 5% of KOH or NaOH or NH4OH or TMAH and texture additives.

6. The method (1) according to claim 1, wherein at least one rinsing step (4, 6) is performed between the first texture etching step (3) and the second texture etching step (7).

7. The method (1) according to claim 1 or 6, wherein at least one cleaning step (5) is carried out between the first texture etching step (3) and the second texture etching step (7) and/or at least one rinsing step (4, 6).

8. The method (1) according to at least one of the preceding claims, characterized in that large cones (11) are generated on less than 10% of the textured surface (13) of the solar wafer (10), preferably on 5% of the textured surface (13), and small cones (12) are generated on more than 90% of the textured surface (13) of the solar wafer (10), preferably on 95% of the textured surface (13).

9. Production line, characterized in that the production line for carrying out the method (1) according to at least one of claims 1 to 8 is equipped with a corresponding bath, wherein in the production line a first texture etching station is provided as a first wet-chemical treatment station and a second first texture etching station is provided at a further downstream production line location.

10. Solar cell, characterized in that the solar cell is produced from a solar wafer (10), the solar wafer (10) being produced using a method according to at least one of claims 1 to 8, and in the texturing of solar wafers large pyramids (11) and small pyramids (12) are present in a statistical 2-fold or multiple distribution.

11. The solar cell of claim 10, wherein the solar cell has a thickness of less than 150 μm.

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