阅读说明：本技术 一种制备Topcon太阳能电池的设备及其工艺 (Device and process for preparing Topcon solar cell ) 是由 李长江 周文彬 杨星 于 2021-05-27 设计创作，主要内容包括：本发明公开了一种制备Topcon太阳能电池的设备及其工艺,该种制备Topcon太阳能电池的设备及其工艺包括依次连接的载入腔、第一工艺腔、隔离腔、第二工艺腔和载出腔,相邻两腔体通过阀门连接,载有硅片的托盘在传输滚轮上传输,所述载入腔可以采用红外灯管对托盘和硅片进行预加热或在载入腔后增设预热腔,所述第一工艺腔采用空间ALD镀膜方式实现SiO2膜层的制备；所述第二工艺腔采用PVD镀膜方式或采用低损伤PVD镀膜方式与直接式PVD镀膜方式相结合的方式来制备Topcon太阳能电池的掺杂非晶/微晶硅膜层。通过上述方式,本发明保证了超薄SiO2膜层对膜层品质和均匀性的要求,避免了绕镀问题,减少了对SiO2层的离子损伤。(The invention discloses a device and a process for preparing a Topcon solar cell, wherein the device and the process for preparing the Topcon solar cell comprise a loading cavity, a first process cavity, an isolation cavity, a second process cavity and a loading cavity which are sequentially connected, two adjacent cavities are connected through a valve, a tray carrying a silicon wafer is conveyed on a conveying roller, the loading cavity can adopt an infrared lamp tube to preheat the tray and the silicon wafer or is additionally provided with a preheating cavity after the loading cavity, and the first process cavity adopts a spatial ALD coating mode to realize the preparation of a SiO2 film layer; and the second process chamber is used for preparing the doped amorphous/microcrystalline silicon film layer of the Topcon solar cell in a PVD (physical vapor deposition) film coating mode or a mode of combining a low-damage PVD film coating mode with a direct PVD film coating mode. Through the mode, the requirements of the ultrathin SiO2 film layer on the quality and the uniformity of the film layer are met, the problem of plating winding is avoided, and ion damage to the SiO2 layer is reduced.)

1. An apparatus and its process for preparing Topcon solar battery, characterized in that: the device for preparing the Topcon solar cell and the process thereof comprise a loading cavity, a first process cavity, an isolation cavity, a second process cavity and a loading-out cavity which are sequentially connected, wherein two adjacent cavities are connected through a valve, a transmission roller is arranged in each cavity which is sequentially connected, a tray loaded with a silicon wafer is transmitted on the transmission roller, the loading cavity can adopt an infrared lamp tube to preheat the tray and the silicon wafer or is additionally provided with a preheating cavity after the loading cavity, a heating device is arranged in the preheating cavity, and the first process cavity adopts a spatial ALD coating mode to realize preparation of a SiO2 film layer; and the second process chamber is used for preparing the doped amorphous/microcrystalline silicon film layer of the Topcon solar cell in a PVD (physical vapor deposition) film coating mode or a mode of combining a low-damage PVD film coating mode with a direct PVD film coating mode.

2. The apparatus and process for preparing Topcon solar cell according to claim 1, wherein: the first process chamber comprises a first buffer chamber, a first film coating chamber and a second buffer chamber, heating plates are laid on the lower layers of the three chambers to continuously heat a tray and a silicon wafer, the tray enters the first film coating chamber after being adjusted to a required process transmission speed in the first buffer chamber, a gas spraying module is arranged on the first film coating chamber, process gas is introduced into the gas spraying module and is silicon source, N2, O3 or H20, the silicon source and the O3 are completely isolated and sprayed to the surface of the silicon wafer by a spraying plate of the gas spraying module in the space of the silicon source and the O3 to realize a spatial ALD reaction, the thickness of the SiO2 film is 0.8-1.6nm according to the required thickness, the spraying plates are designed and configured to be 5-20 to realize a spatial ALD film coating cycle, the tray is coated with a required film after passing through the spraying area at a certain speed, the tray is completely enters the second buffer chamber after being conveyed and separated from the film coating area, so as to finish the film coating of the silicon dioxide film coating, at the moment, the pressure in the isolation cavity is adjusted to be consistent with the pressure of the second buffer cavity, the left valve of the isolation cavity is opened, the tray is conveyed into the isolation cavity, the left valve is closed, and the tray can be conveyed into the second process cavity after the air isolation action of the isolation cavity.

3. The apparatus and process for preparing Topcon solar cell according to claim 2, wherein: the second process cavity comprises a third buffer cavity, a PVD (physical vapor deposition) coating cavity and a fourth buffer cavity, a heating plate is laid on the lower layer of the three cavities of the second process cavity, the tray enters the PVD coating cavity at a certain speed after passing through the third buffer cavity, n (n is larger than or equal to 1) cathode targets are contained in the PVD coating cavity, and the doped phosphorane gas is introduced to realize the preparation of the doped amorphous silicon film.

4. The apparatus and process for preparing Topcon solar cell according to claim 3, wherein: 6-12 Si rotary targets are adopted in the PVD coating cavity to prepare the doped amorphous silicon film, and the thickness of the film is 80-160 nm.

5. The apparatus and process for preparing Topcon solar cell according to claim 2, wherein: the second process cavity comprises a third buffer cavity, a low-damage PVD coating cavity, n (n is more than or equal to 1) conventional direct PVD coating cavities and a fourth buffer cavity, a heating plate is laid on the lower layer of the cavity of the second process cavity, a remote plasma low-damage cathode device is assembled on the top of the low-damage PVD coating cavity, conventional direct PVD cathode targets are assembled on the tops of the two conventional direct PVD coating cavities, and the preparation of the doped amorphous silicon film layer with the required thickness is realized by matching the number of the coating cavities, the number of the targets in the cavity and the transmission speed.

6. The apparatus and process for preparing Topcon solar cell according to claim 5, wherein: the low-damage cathode device comprises two pairs of targets, gas jet holes, a power supply and target ions or atoms, wherein the targets are vertically arranged, the power supply is externally connected with the targets, the gas jet holes are formed above the two pairs of targets and jet Ar ions, the Ar ions reciprocate between the two pairs of targets to sputter the target ions or atoms more efficiently, the target ions or atoms are brought to the surface of the tray through the gas jetted by the jet holes to be deposited into a film, and meanwhile, the jetted gas is doped with phosphane to prepare the phosphorus-doped amorphous silicon film.

7. The apparatus and process for preparing Topcon solar cell according to claim 3, wherein: the tray adopts the fretwork tray, adopts from bottom to top coating film mode, and gas spraying module and cathode target set up in the below of cavity promptly, and the hot plate setting is in the cavity top, and the tray is transmitted by the transmission gyro wheel and is covered the membrane zone back, and the back of silicon chip is plated required film.

Technical Field

The invention relates to the technical field of solar cells, in particular to a device and a process for preparing a Topcon solar cell.

Background

The large-scale use of traditional fossil energy causes serious damage to the environment and gradually faces the problem of use exhaustion, so that the utilization of new energy such as solar energy becomes an important choice for human development, with the gradual realization of flat-price internet surfing, the solar cell industry develops rapidly in recent years, the current PERC solar cell occupies most markets of solar cells due to high conversion efficiency and low manufacturing cost, but the improvement of the conversion efficiency almost reaches the bottleneck period, the cost reduction space is narrow, the Topcon solar cell is considered as a next-generation solar cell technical route with higher conversion efficiency, and the Topcon solar cell can improve the conversion efficiency of the industrialized solar cell by about 1-1.5%.

At present, the apparatuses for preparing tunneling silicon dioxide thin films and doping amorphous/microcrystalline silicon thin films of Topcon solar cells are generally low-pressure chemical vapor deposition LPCVD coating apparatuses (hereinafter abbreviated as LPCVD coating apparatuses), static plate-type plasma enhanced chemical vapor deposition PECVD coating apparatuses (hereinafter abbreviated as PECVD coating apparatuses), tubular PEALD & PECVD coating apparatuses, and plate-type Physical Vapor Deposition (PVD) coating apparatuses (hereinafter abbreviated as plate-type PVD coating apparatuses).

The LPCVD coating equipment needs very high process temperature, generally 500-900 ℃, which is easy to damage the silicon wafer, the high process temperature also increases the service life loss of the equipment and increases the energy consumption of electric energy, the LPCVD coating speed is very low, the equipment productivity is low, meanwhile, the problem of very serious plating winding is also caused, and the online in-situ doping is not easy to realize.

When the doped amorphous/microcrystalline silicon thin film is prepared by adopting the tubular PECVD coating equipment, the tubular PECVD coating equipment generally adopts a power supply with lower frequency, generally 40KHz-250kHz, and a heavy ion damage is easily generated during the coating of the low-frequency power supply, so that the passivation effect of the film layer is reduced.

When the doped amorphous silicon layer is removed after the tunneling SiO2 layer is prepared by adopting a tubular PECVD or tubular PEALD film coating, the graphite boat is transferred out of the tubular cavity and leaves a vacuum environment and then enters the doped amorphous silicon film coating cavity, so that the SiO2 film prepared on the silicon chip is easily influenced by water vapor or oxygen in the air to influence the film performance, the takt time is influenced by frequent vacuumizing and vacuum breaking, the equipment cost is increased, the general silicon chip of tubular equipment is vertically placed, a click print can be left on the silicon chip after film coating, and the back face still has some problems of around plating.

When the plate-type PECVD coating equipment is used for preparing the doped amorphous/microcrystalline silicon thin film, the thickness of the film layer is generally 100-200nm, a large coating cavity is needed to improve the productivity, the uniformity of coating is not easy to realize, dust is easily formed in the cavity, the cavity needs to be cleaned frequently, the takt time is influenced, and the cost is increased.

When the plate-type PVD coating equipment is adopted to prepare the doped amorphous silicon layer, the PVD coating seriously damages ions of a very thin SiO2 layer, and the passivation performance of SiO2 is seriously influenced.

Based on the above defects and shortcomings, there is a need to improve the existing technology and design an apparatus and process for manufacturing a Topcon solar cell.

Disclosure of Invention

The invention mainly solves the technical problem of providing equipment and a process for preparing a Topcon solar cell, which ensure the requirements of an ultrathin SiO2 film layer on the quality and uniformity of the film layer, meet the requirements on the film coating speed and uniformity during the preparation of a doped amorphous silicon layer, avoid the problem of plating by winding and reduce the ion damage to a SiO2 layer.

In order to solve the technical problems, the invention adopts a technical scheme that: the device for preparing the Topcon solar cell and the process thereof comprise a loading cavity, a first process cavity, an isolation cavity, a second process cavity and a loading cavity which are sequentially connected, wherein two adjacent cavities are connected through a valve, a transmission roller is arranged in each cavity which is sequentially connected, a tray carrying a silicon wafer is transmitted on the transmission roller, the loading cavity can adopt an infrared lamp tube to preheat the tray and the silicon wafer or is additionally provided with a preheating cavity behind the loading cavity, a heating device is arranged in the preheating cavity, and the first process cavity adopts a spatial ALD film coating mode to realize preparation of an SiO2 film layer; and the second process chamber is used for preparing the doped amorphous/microcrystalline silicon film layer of the Topcon solar cell in a PVD (physical vapor deposition) film coating mode or a mode of combining a low-damage PVD film coating mode with a direct PVD film coating mode.

Preferably, the first process chamber comprises three chambers, namely a first buffer chamber, a first coating chamber and a second buffer chamber, wherein heating plates are laid on the lower layers of the three chambers to continuously heat the tray and the silicon wafer, the tray enters the first coating chamber after being adjusted to the required process transmission speed in the first buffer chamber, a gas spraying module is arranged on the first coating chamber, process gas, namely silicon source, N2, O3 or H20, is introduced into the gas spraying module, the silicon source and the O3 are completely isolated and sprayed onto the surface of the silicon wafer by a spraying plate of the gas spraying module in the space to realize the spatial ALD reaction, the thickness of the SiO2 film layer is 0.8-1.6nm according to the required preparation, 5-20 spraying plates are designed and configured to realize the spatial ALD coating cycle, the tray is coated with the required film after passing through the spraying area at a certain speed, and the tray completely enters the second buffer chamber after being conveyed and separated from the coating area, the coating of the silicon dioxide film layer is completed, the pressure in the isolation cavity is adjusted to be consistent with the pressure of the second buffer cavity, the left valve of the isolation cavity is opened, the tray is conveyed into the isolation cavity, the left valve is closed, and the tray can be conveyed into the second process cavity after the air isolation action of the isolation cavity.

Preferably, the second process chamber comprises a third buffer chamber, a PVD (physical vapor deposition) coating chamber and a fourth buffer chamber, a heating plate is laid on the lower layer of the three chambers of the second process chamber, the tray passes through the third buffer chamber and then enters the PVD coating chamber at a certain speed, n (n is larger than or equal to 1) cathode targets are contained in the PVD coating chamber, and the doped phosphorane gas is introduced to realize the preparation of the doped amorphous silicon film.

Preferably, 6-12 Si rotary targets are adopted in the PVD coating cavity to prepare the doped amorphous silicon thin film, and the thickness of the thin film is 80-160 nm.

Preferably, the second process cavity comprises a third buffer cavity, a low-damage PVD coating cavity, n (n is larger than or equal to 1) conventional direct PVD coating cavities and a fourth buffer cavity, a heating plate is laid on the lower layer of the cavity of the second process cavity, a remote plasma low-damage cathode device is assembled on the top of the low-damage PVD coating cavity, conventional direct PVD cathode targets are assembled on the tops of the two conventional direct PVD coating cavities, and the preparation of the doped amorphous silicon film layer with the required thickness is realized by matching the number of the coating cavities, the number of the targets in the cavity and the transmission speed.

Preferably, the low-damage cathode device comprises two pairs of targets, gas jet holes, a power supply and target ions or atoms, the targets are vertically arranged, the power supply is externally connected with the targets, the gas jet holes are formed above the two pairs of targets, the gas jet holes jet Ar ions, the Ar ions reciprocate between the two pairs of targets to sputter the target ions or atoms more efficiently, the target ions or atoms are brought to the surface of the tray through the gas jetted by the gas jet holes to deposit a film, and meanwhile, the jetted gas is doped with phosphane to prepare the phosphorus-doped amorphous silicon film.

Preferably, the tray adopts a hollow tray, a film coating mode from bottom to top is adopted, namely the gas spraying module and the cathode target material are arranged below the cavity, the heating plate is arranged above the cavity, and the back surface of the silicon wafer is coated with the required film after the tray is transmitted by the transmission roller wheel and passes through the film coating area.

Compared with the prior art, the invention has the beneficial effects that:

the linear two-in-one coating equipment combining a spatial ALD coating mode and a PVD coating mode is adopted for preparing a tunneling silicon dioxide film layer and a doped amorphous/microcrystalline silicon film layer of a back passivation film of a Topcon solar cell, the silicon dioxide film layer is prepared in the ALD coating mode, the doped amorphous/microcrystalline silicon film layer is prepared in the PVD coating mode, an isolation cavity is arranged between the ALD coating mode and the PVD coating mode, a vacuum cavity does not need to be formed when a tray is in transition between the two coating modes, and gas between the two coating modes is prevented from being connected in series;

the doped amorphous silicon layer of the Topcon solar cell is prepared by combining a low-damage PVD (physical vapor deposition) coating mode with a direct PVD coating mode, and the doped amorphous silicon layer closest to the SiO2 layer is prepared by the low-damage PVD coating mode, so that ion damage to the SiO2 layer is avoided;

the coating equipment for preparing the SiO2 layer and the doped amorphous silicon layer of the Topcon solar cell in a spatial ALD coating mode and a PVD coating mode from bottom to top is adopted, the problem of around-coating is completely avoided, the RPD coating mode is adopted in the first coating cavity of the PVD coating cavity, the RPD coating mode and the PVD coating mode are combined to prepare the doped amorphous silicon film, and ion damage to the SiO2 layer is reduced.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of an apparatus and a process for manufacturing a Topcon solar cell.

Fig. 2 is a schematic structural diagram of an embodiment two of an apparatus and a process for manufacturing a Topcon solar cell.

Fig. 3 is a schematic structural diagram of a second part of an embodiment of an apparatus and a process for manufacturing a Topcon solar cell.

Fig. 4 is a schematic structural diagram of an embodiment of an apparatus and a process for manufacturing a Topcon solar cell.

Detailed Description

The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the invention can be more readily understood by those skilled in the art, and the scope of the invention will be more clearly defined.

Referring to fig. 1 to 4, an embodiment of the present invention includes:

the device for preparing the Topcon solar cell and the process thereof comprise a loading cavity 1, a first process cavity 2, an isolation cavity 3, a second process cavity 4 and a loading cavity 5 which are sequentially connected, wherein two adjacent cavities are connected through a valve 6, a transmission roller 7 is arranged in each cavity which is sequentially connected, a tray 8 carrying a silicon wafer is transmitted on the transmission roller 7, the loading cavity 1 can adopt an infrared lamp tube to preheat the tray 8 and the silicon wafer or is additionally provided with a preheating cavity 9 behind the loading cavity 1, a heating device 91 is arranged in the preheating cavity 9, and the first process cavity 2 adopts a spatial ALD coating mode to realize preparation of a SiO2 film layer; the second process chamber 4 is used for preparing the doped amorphous/microcrystalline silicon film layer of the Topcon solar cell in a PVD (physical vapor deposition) film coating mode or a mode of combining a low-damage PVD film coating mode and a direct PVD film coating mode.

The first embodiment is as follows:

a linear two-in-one coating device combining a spatial ALD coating mode and a PVD coating mode is adopted for preparing a tunneling silicon dioxide film layer and a doped amorphous/polycrystalline silicon film layer of a back passivation film of a Topcon solar cell, a first process chamber 2 comprises three chambers including a first buffer chamber 21, a first coating chamber 22 and a second buffer chamber 23, a heating plate 24 is laid on the lower layer of the three chambers to continuously heat a tray 8 and a silicon wafer, the tray 8 enters the first coating chamber 22 after being adjusted to a required process transmission speed in the first buffer chamber 21, a gas spraying module 25 is arranged on the first coating chamber 22, process gas is introduced into the gas spraying module 25 and is a silicon source, N2, O3 or H20, the silicon source and the O3 are completely isolated by a spraying plate of the gas spraying module 25 and sprayed to the surface of the silicon wafer, a spatial ALD reaction is realized, and the thickness of the SiO2 film layer is 0.8-1.6nm according to be prepared, 5-20 spraying plates are designed and configured to realize spatial ALD coating circulation, the tray 8 carries a silicon wafer and is coated with a required film after passing through the spraying area at a certain speed, and the tray 8 completely enters the second buffer cavity 23 after being conveyed to be separated from the coating area, so that the coating of the silicon dioxide film is completed.

At this time, the pressure in the isolation cavity 3 is adjusted to be consistent with the pressure of the second buffer cavity 23, the left valve of the isolation cavity 3 is opened, the tray 8 is conveyed into the isolation cavity 3, the left valve is closed, and the tray can be conveyed into the second process cavity 4 after the air isolation action of the isolation cavity 3.

The second process chamber 4 comprises a third buffer chamber 41, a PVD coating chamber 42 and a fourth buffer chamber 43, heating plates are laid on the lower layers of the three chambers of the second process chamber 4, the tray 8 enters the PVD coating chamber 42 at a certain speed after passing through the third buffer chamber 41, n (n is larger than or equal to 1) cathode targets 44 are contained in the PVD coating chamber 42, and phosphine-doped gas is introduced to realize the preparation of the doped amorphous silicon film.

Preferably, 6-12 Si rotary targets are adopted in the PVD coating cavity 42 to prepare the doped amorphous silicon film, and the thickness of the film is 80-160 nm.

In the embodiment, the preparation of the required SiO2 film thickness is realized by matching the spatial coating cycle number of ALD and the number of silicon targets of PVD, and a high production beat is realized.

The embodiment adopts a spatial ALD coating mode to prepare the ultrathin tunneling silicon dioxide film layer, meets the requirements of the Topcon solar cell on high thickness uniformity and high passivation performance of the SiO2 film layer, and avoids the defect of low ALD coating rate due to the fact that the SiO2 film layer is very thin; the method has the advantages that the doped amorphous silicon film layer is prepared by adopting a PVD (physical vapor deposition) film coating mode, the requirements of online doping, high plating rate, high uniformity and no H2 overflow are met, the two film coating modes are combined together through the isolation cavity, and the step that the silicon wafer is discharged from the vacuum cavity after the SiO2 film layer is coated is avoided.

Set up between ALD coating mode and the PVD coating mode and keep apart chamber 3, tray 8 need not out the vacuum cavity when passing between two kinds of coating modes, prevents simultaneously that the gas between two kinds of coating modes from crossing each other.

The second embodiment is as follows:

the first process chamber 2 in this embodiment also adopts a spatial ALD coating method to realize the preparation of the SiO2 film layer, consistent with the embodiment, the coating chamber of the second process chamber 4 is composed of two PVD coating modes, namely a remote plasma low-damage PVD coating mode and a direct PVD coating mode, the equipment structure is shown as figure 2, the second process chamber 4 comprises a third buffer chamber 41, a low-damage PVD coating chamber 42, n (n is more than or equal to 1) conventional direct PVD coating chambers 43 and a fourth buffer chamber 44, a heating plate is laid on the lower layer of the second process chamber 4, a remote plasma low-damage cathode device 45 is assembled on the top of the low-damage PVD coating chamber 42, a conventional direct PVD cathode target 46 is assembled on the top of the two conventional direct PVD coating chambers 43, the conventional direct PVD coating chambers 43 are the same as the PVD coating chambers of the first embodiment, and the preparation of the doped amorphous silicon film layer with the required thickness is realized by matching the number of the film coating chambers, the number of the targets in the chambers and the transmission speed.

The low loss cathode arrangement 45 is shown in fig. 3: the sputtering device comprises two pairs of targets 451, gas injection holes 452, a power supply 453 and target ions or atoms 454 which are vertically arranged, wherein the pair of targets 451 is externally connected with the power supply 453, the gas injection holes 452 are arranged above the two pairs of targets 451, the gas injection holes 452 inject Ar ions, the Ar ions reciprocate between the two pairs of targets 451 to sputter the target ions or atoms 454 more efficiently, the target ions or atoms 454 are brought to the surface of the tray 8 through the gas injected from the gas injection holes 452 to deposit and form a film, meanwhile, the gas injected is doped with phosphine to prepare a phosphorus-doped amorphous silicon film, the sputtering ions Ar reciprocate between the targets, the probability of reaching the tray 8 is reduced, and even if the Ar ions reach the surface of the tray 8, the ion energy is greatly reduced, so the ion damage of the ions to the film on the tray 8 can be greatly reduced.

The improvement of the present embodiment over the first embodiment is: the doped amorphous silicon film close to the SiO2 film layer is prepared by configuring a low-damage PVD coating mode, ion damage of the traditional direct PVD coating to the SiO2 film layer is avoided, the passivation effect of the SiO2 film layer is improved, the performance of the prepared Topcon solar cell is improved, the doped amorphous silicon film layer required to be prepared is thicker and is generally 100-160nm, the low-damage PVD coating mode and the conventional direct plasma PVD coating mode are combined to maintain the lower manufacturing cost of equipment, and meanwhile, the maturity and the performance of the equipment are guaranteed.

The third concrete embodiment:

in the embodiment, the film coating mode is changed from bottom to top on the basis of the first embodiment, the tray 8 is a hollow tray, namely, the gas spraying module 25 and the cathode target 44 are arranged below the cavity, the heating plate is arranged above the cavity, and after the tray 8 is transmitted by the transmission roller 7 and passes through the film coating area, the back surface of the silicon wafer is coated with the required film. The device architecture is shown in fig. 4.

By adopting a film coating mode from bottom to top, the edges of the periphery of the silicon wafer are shielded by the tray, so that doped amorphous silicon can be effectively prevented from being coated to the edges of the silicon wafer and the other side of the silicon wafer, the subsequent etching and cleaning process for preparing the Topcon battery can be completely omitted, the yield is improved, and the cost is saved.

When the coating mode from bottom to top is adopted, the low-damage PVD coating cavity can be changed into an RPD coating mode by combining with the two PVD coating cavities at the back, the ion damage to the SiO2 film layer when the doped amorphous silicon film layer is prepared can be avoided, when the doped amorphous silicon film is prepared by using the RPD coating mode, the sublimation target source is a pure silicon target source or a silicon target source doped with phosphorus, the preparation and processing are easy to achieve due to the small size of the RPD target source, and phosphine gas is introduced in the coating process at the same time to prepare the amorphous silicon film with the required doping concentration.

When the device and the process for preparing the Topcon solar cell work, the doped amorphous silicon film layer is prepared by combining a remote plasma physical vapor deposition device with the traditional physical magnetron sputtering vapor deposition device (PVD), so that the problem of damage of a PVD coating to the SiO2 film layer is solved; the tunneling silicon dioxide film and the doped amorphous/microcrystalline silicon film of the Topcon solar cell are prepared by combining a spatial Atomic Layer Deposition (ALD) coating mode and a dynamic plate PVD coating mode, so that the requirements of the ultrathin SiO2 film layer on the quality and uniformity of the film layer are ensured, and the requirements on the coating rate and uniformity during the preparation of the doped amorphous silicon layer are also met; the coating equipment for preparing the SiO2 layer and the doped amorphous silicon layer of the Topcon solar cell by combining the spatial ALD coating and PVD coating modes and adopting the coating mode from bottom to top completely avoids the problem of around-coating, saves the link of cleaning, etching and removing the around-coating in the production process of the Topcon cell, shortens the process and saves the cost. And the first film coating cavity of the PVD film coating cavity adopts an RPD film coating mode, so that the preparation of the doped amorphous silicon film by combining the RPD film coating mode and the PVD film coating mode is realized, and the ion damage to the SiO2 layer is reduced.

The device and the process for preparing the Topcon solar cell ensure the requirements of the ultrathin SiO2 film layer on the quality and the uniformity of the film layer, meet the requirements on the film coating speed and the uniformity when preparing the doped amorphous silicon layer, avoid the problem of plating by winding and reduce the ion damage to the SiO2 layer.

The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.